CN107731676A - A kind of preparation method of AlGaInP film LED chips Cutting Road - Google Patents
A kind of preparation method of AlGaInP film LED chips Cutting Road Download PDFInfo
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- 238000005520 cutting process Methods 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 55
- 239000007788 liquid Substances 0.000 claims abstract description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000002253 acid Substances 0.000 claims abstract description 25
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 239000007864 aqueous solution Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- 238000000605 extraction Methods 0.000 claims abstract description 6
- 238000003698 laser cutting Methods 0.000 claims abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 5
- 231100000004 severe toxicity Toxicity 0.000 abstract description 4
- 125000001246 bromo group Chemical group Br* 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 48
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000013019 agitation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000008635 plant growth Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000010980 sapphire Chemical group 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Condensed Matter Physics & Semiconductors (AREA)
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- Led Devices (AREA)
Abstract
The invention discloses a kind of preparation method of AlGaInP film LED chips Cutting Road, comprise the following steps：AlGaInP LED epitaxial materials are prepared first with the MOCVD of routine, then epitaxial material is transferred on bonding substrate using evaporation of metal, photoetching, burn into bonding, these conventional tube core preparation technologies of alloy, prepares the AlGaInP film LED chips of N faces light extraction；Before cutting separates AlGaInP film LED chips; the region beyond Cutting Road is protected with photoresist using photoetching process; then AlGaInP film LED chips to be cut will be put into the Cutting Road corrosive liquid that the acid iodide aqueous solution, hydrochloric acid and water are prepared; the epitaxial material of Cutting Road corresponding region is eroded; Cutting Road is prepared, is finally separated AlGaInP film LED chips along Cutting Road center line with laser cutting machine or abrasive wheel cutting machine.The present invention has good stability and uniformity, and simple substance bromo element of the Cutting Road corrosive liquid without severe toxicity, is advantageous to technologist's health and environmental protection.
Description
Technical field
The present invention relates to light emitting semiconductor device field, more particularly, to a kind of AlGaInP film LED chips Cutting Road
Preparation method.
Background technology
Semiconductor light-emitting-diode (Light-Emitting Diodes, LED) has been widely used in many fields,
It is acknowledged as green illumination light source of future generation.With the AlGaInP materials of gallium arsenide substrate Lattice Matching can cover from 560nm to
The visible wavelength of 650nm scopes, it is the excellent material for preparing dark red, red, orange yellow green LED.
AlGaInP light emitting diodes have important answer in the fields such as solid-state illumination, display, city lighting, plant growth
With, be widely used in full color screen display, automobile signal light, traffic lights, stage light projecting lamp, plant growth lighting lamp and
In the products such as high color rendering index (CRI) white-light illuminating light fixture.
In recent years, people have made great progress on AlGaInP LED epitaxial material growing technologies, amount in it
Sub- efficiency can reach more than 90%.But AlGaInP LED epitaxial materials, Ran Houzhi are grown directly in gallium arsenide substrate
The back side for being connected on gallium arsenide substrate, which prepares N electrode, LED chip prepared by P electrode is prepared in upper surface has substrate and absorbs and complete
Reflection loss, so as to cause chip electro-optical efficiency very low, generally less than 10%.
Absorbed to reduce substrate, suppress total reflection to improve the conversion efficiency of electric light, a kind of very effective method is system
Standby film LED chip.This method be first in gallium arsenide substrate grow AlGaInP LED epitaxial materials, then P towards
Under be bonded to silicon, germanium, sapphire etc. other have on the bonding substrate of catoptric arrangement, then gallium arsenide substrate is removed, then made
Make N electrode, and carry out surface coarsening to reduce the loss at total reflection of light gasing surface, this AlGaInP film LED chips can incite somebody to action
LED electro-optical efficiency lifts 3 ~ 6 times, reaches 30 ~ 60%.
In the preparation technology of AlGaInP film LED chips, chip before cutting separates needs that corresponding region will be cut
Epitaxial layer remove, prepare Cutting Road, to avoid cutting process from producing damage in epitaxial material, cause chip failure.
At present, the epitaxial material that industry is removed on Cutting Road is carried out using the corrosive liquid of the bromic acid addition simple substance bromine of dilution more
Corrosion.The stability and uniformity of the corrosive liquid are difficult to control, and the simple substance bromine used has severe toxicity, to technologist's health and ring
Very big potential safety hazard be present in border.
Therefore, the preparation side of the AlGaInP film LED chip Cutting Roads less toxic or nontoxic, process stabilization is controllable is found
Method just seems extremely important.
The content of the invention
It is an object of the present invention to provide a kind of preparation method of AlGaInP film LED chips Cutting Road, this method is not only stablized
Property and uniformity it is good, and Cutting Road corrosive liquid without severe toxicity simple substance bromo element, be advantageous to protect technologist's health and
Environment.
The object of the present invention is achieved like this：
A kind of preparation method of AlGaInP film LED chips Cutting Road, comprises the following steps：
First with conventional MOCVD prepare AlGaInP LED epitaxial materials, then using evaporation of metal, photoetching, burn into bonding,
Epitaxial material is transferred on bonding substrate by these conventional tube core preparation technologies of alloy, and the AlGaInP for preparing N faces light extraction is thin
Film LED chip, before cutting separates AlGaInP film LED chips, utilize region of the normal photolithographic process beyond Cutting Road
Protect, be characterized in photoresist：AlGaInP film LED chips to be cut are put into Cutting Road corrosive liquid, Cutting Road pair
Answer the epitaxial material in region to erode, prepare Cutting Road, finally with laser cutting machine or abrasive wheel cutting machine along Cutting Road center
Line separates chip, obtains finished product.
Cutting Road corrosive liquid is formulated by the acid iodide aqueous solution, hydrochloric acid and water, and volume proportion is：The acid iodide aqueous solution:Hydrochloric acid：
Water=1:1:x（5<x<20）, wherein, the molar concentration of the acid iodide aqueous solution is 0.1 ~ 0.4mol/L, and the volumetric concentration of hydrochloric acid is 37%,
Water is deionized water.
Cutting Road corrosive liquid is 1 to the corrosion rate of AlGaInP LED epitaxial materials when corrosive liquid temperature is 25 ± 5 degree
~ 3 [mus, etching time are adjusted according to the AlGaInP LED epitaxial material thickness of Cutting Road corresponding region, generally
It can be completed for 1 ~ 5 minute.
Corrosion speed of the Cutting Road corrosive liquid to the AlGaInP material layers in AlGaInP LED epitaxial materials and GaP material layers
Rate ratio be more than 5, can very well control corrosion rate by the end of GaP material layers.
The preparation method of AlGaInP film LED chips Cutting Road provided by the invention have good stability with it is consistent
Property, simple substance bromo element of the Cutting Road corrosive liquid without severe toxicity, be advantageous to protect technologist's health and environment.
Brief description of the drawings
Fig. 1 is typical AlGaInP film LED chips structural representation；
Fig. 2 is that the photoresist before Cutting Road of the present invention corrosion is coated with schematic diagram；
Chip structure schematic diagram when Fig. 3 is after Cutting Road of the present invention corrosion with photoresist；
Fig. 4 is chip structure schematic diagram to be cut after present invention removal photoresist；
Description of symbols in accompanying drawing：
In Fig. 1：100：Bonding substrate, 101：N electrode, 102：P electrode, 103：AlGaInP epitaxial materials, 104：GaP materials
Layer, 105：Bonding metal layer, 106：N-type GaAs ohmic contact layer；
In Fig. 2：207：Photoresist, 203：AlGaInP material layers, 204：GaP material layers；
In Fig. 3：307：Photoresist, 303：AlGaInP material layers, 304：GaP material layers；308 Cutting Roads；
In Fig. 4：408：Cutting Road, 409：Chip cutting position, 403：AlGaInP material layers, 404：GaP material layers.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.
Embodiment 1：
A kind of preparation method of AlGaInP film LED chips Cutting Road, comprises the following steps：
First with routine MOCVD prepare epitaxial material, then using evaporation of metal, photoetching, burn into bonding, alloy these
Epitaxial material is transferred on bonding substrate by conventional tube core preparation technology, prepares the AlGaInP film LED chips of N faces light extraction.
Now, it is UNICOM between AlGaInP film LED chips, in order to split AlGaInP film LED chips, it is necessary to make
Standby Cutting Road, the survey of AlGaInP film LED chips point and the cutting of AlGaInP film LED chips are then carried out, is comprised the following steps that：
A, photoresist is coated on the surface of AlGaInP film LED chips, with normal photolithographic process by AlGaInP film LED chips
Cutting Road corresponding region photoresist remove, expose AlGaInP LED epitaxial materials, now structure is as shown in Figure 2；
B, the acid iodide aqueous solution is prepared：Acid iodide is put into deionized water, is stirred 3 minutes with glass bar, is allowed acid iodide fully to dissolve, match somebody with somebody
The 0.2mol/L acid iodide aqueous solution is made；
C, Cutting Road corrosive liquid is prepared：The hydrochloric acid that deionized water and 37% concentration are measured with graduated cylinder is poured into and is put into the acid iodide aqueous solution,
The acid iodide aqueous solution, hydrochloric acid and deionized water volume ratio are 1:1:6, fully agitation, stand 10 minutes, obtain Cutting Road corrosive liquid；
D, Cutting Road corrodes：AlGaInP film LED chips to be cut are put into Cutting Road corrosive liquid, corrosive liquid temperature control
System is in the range of 25 ± 5 degree, and the epitaxial material thickness that etching time is intended removing according to Cutting Road corresponding region is adjusted, generally
It can be completed for 3 minutes, the Cutting Road corrosive liquid is more than 5 to the corrosion rate of AlGaInP material layers and GaP material layers ratio, because
This corrosion can be easy to stop into GaP material layers, and the structure after Cutting Road corrosion is as shown in Figure 3；
E, remove photoresist：By photoresist acetone ultrasound 10 minutes, EtOH Sonicate 5 minutes, then with deionized water rinsing 10 minutes, so
Dried afterwards with drier；
F, point is surveyed：The AlGaInP film LED chip point measurement machine testing photoelectronic performance indications that Cutting Road corrosion is finished；
G, cut：Will along Cutting Road center laser cutting machine or abrasive wheel cutting machine by AlGaInP film LED chips
AlGaInP film LED chips are cut, and cutting position is as shown in figure 4, obtain finished product；
After above step, survey index by point with separator and stepping is carried out to tube core to voltage, brightness, wavelength, class wrapping
After be put in storage.
Embodiment 2：
A kind of preparation method of AlGaInP film LED chips Cutting Road, comprises the following steps：
First with routine MOCVD prepare epitaxial material, then using evaporation of metal, photoetching, burn into bonding, alloy these
Epitaxial material is transferred on bonding substrate by conventional tube core preparation technology, prepares the AlGaInP film LED chips of N faces light extraction.
Now, it is UNICOM between AlGaInP film LED chips, in order to split AlGaInP film LED chips, it is necessary to make
Standby Cutting Road, the survey of AlGaInP film LED chips point and the cutting of AlGaInP film LED chips are then carried out, is comprised the following steps that：
A, photoresist is coated on the surface of AlGaInP film LED chips, with normal photolithographic process by AlGaInP film LED chips
Cutting Road corresponding region photoresist remove, expose AlGaInP LED epitaxial materials, now structure is as shown in Figure 2；
B, the acid iodide aqueous solution is prepared：Acid iodide is put into deionized water, is stirred 5 minutes with glass bar, is allowed acid iodide fully to dissolve, match somebody with somebody
The 0.4mol/L acid iodide aqueous solution is made；
C, Cutting Road corrosive liquid is prepared：The hydrochloric acid that deionized water and 37% concentration are measured with graduated cylinder is poured into and is put into the acid iodide aqueous solution,
The acid iodide aqueous solution, hydrochloric acid and deionized water volume ratio are 1:1:19, fully agitation, stand 10 minutes, obtain Cutting Road corrosive liquid；
D, Cutting Road corrodes：AlGaInP film LED chips to be cut are put into Cutting Road corrosive liquid, corrosive liquid temperature control
System is in the range of 25 ± 5 degree, and the epitaxial material thickness that etching time is intended removing according to Cutting Road corresponding region is adjusted, generally
It can be completed for 5 minutes, the Cutting Road corrosive liquid is more than 5 to the corrosion rate of AlGaInP material layers and GaP material layers ratio, because
This corrosion can be easy to stop into GaP material layers, and the structure after Cutting Road corrosion is as shown in Figure 3；
E, remove photoresist：By photoresist acetone ultrasound 10 minutes, EtOH Sonicate 5 minutes, then with deionized water rinsing 10 minutes, so
Dried afterwards with drier；
F, point is surveyed：The AlGaInP film LED chip point measurement machine testing photoelectronic performance indications that Cutting Road corrosion is finished；
G, cut：Will along Cutting Road center laser cutting machine or abrasive wheel cutting machine by AlGaInP film LED chips
AlGaInP film LED chips are cut, and cutting position is as shown in figure 4, obtain finished product；
After above step, survey index by point with separator and stepping is carried out to tube core to voltage, brightness, wavelength, class wrapping
After be put in storage.
Embodiment 3：
A kind of preparation method of AlGaInP film LED chips Cutting Road, comprises the following steps：
First with routine MOCVD prepare epitaxial material, then using evaporation of metal, photoetching, burn into bonding, alloy these
Epitaxial material is transferred on bonding substrate by conventional tube core preparation technology, prepares the AlGaInP film LED chips of N faces light extraction.
Now, it is UNICOM between AlGaInP film LED chips, in order to split AlGaInP film LED chips, it is necessary to make
Standby Cutting Road, the survey of AlGaInP film LED chips point and the cutting of AlGaInP film LED chips are then carried out, is comprised the following steps that：
A, photoresist is coated on the surface of AlGaInP film LED chips, with normal photolithographic process by AlGaInP film LED chips
Cutting Road corresponding region photoresist remove, expose AlGaInP LED epitaxial materials, now structure is as shown in Figure 2；
B, the acid iodide aqueous solution is prepared：Acid iodide is put into deionized water, is stirred 4 minutes with glass bar, is allowed acid iodide fully to dissolve, match somebody with somebody
The 0.3mol/L acid iodide aqueous solution is made；
C, Cutting Road corrosive liquid is prepared：The hydrochloric acid that deionized water and 37% concentration are measured with graduated cylinder is poured into and is put into the acid iodide aqueous solution,
The acid iodide aqueous solution, hydrochloric acid and deionized water volume ratio are 1:1:10, fully agitation, stand 10 minutes, obtain Cutting Road corrosive liquid；
D, Cutting Road corrodes：AlGaInP film LED chips to be cut are put into Cutting Road corrosive liquid, corrosive liquid temperature control
System is in the range of 25 ± 5 degree, and the epitaxial material thickness that etching time is intended removing according to Cutting Road corresponding region is adjusted, generally
It can be completed for 3 minutes, the Cutting Road corrosive liquid is more than 5 to the corrosion rate of AlGaInP material layers and GaP material layers ratio, because
This corrosion can be easy to stop into GaP material layers, and the structure after Cutting Road corrosion is as shown in Figure 3；
E, remove photoresist：By photoresist acetone ultrasound 10 minutes, EtOH Sonicate 5 minutes, then with deionized water rinsing 10 minutes, so
Dried afterwards with drier；
F, point is surveyed：The AlGaInP film LED chip point measurement machine testing photoelectronic performance indications that Cutting Road corrosion is finished；
G, cut：Will along Cutting Road center laser cutting machine or abrasive wheel cutting machine by AlGaInP film LED chips
AlGaInP film LED chips are cut, and cutting position is as shown in figure 4, obtain finished product；
After above step, survey index by point with separator and stepping is carried out to tube core to voltage, brightness, wavelength, class wrapping
After be put in storage.
Claims (5)
1. a kind of preparation method of AlGaInP film LED chips Cutting Road, comprises the following steps：First with conventional MOCVD systems
Standby AlGaInP LED epitaxial materials, then prepared using evaporation of metal, photoetching, burn into bonding, alloy these conventional tube cores
Epitaxial material is transferred on bonding substrate by technique, is prepared the AlGaInP film LED chips of N faces light extraction, is separated in cutting
Before AlGaInP film LED chips, protected with photoresist using region of the normal photolithographic process beyond Cutting Road, its feature
It is：AlGaInP film LED chips to be cut are put into Cutting Road corrosive liquid, the extension material of Cutting Road corresponding region
Material erodes, and prepares Cutting Road, finally separates chip along Cutting Road center line with laser cutting machine or abrasive wheel cutting machine, obtains
To finished product.
2. the preparation method of AlGaInP film LED chips Cutting Road according to claim 1, it is characterised in that：Cutting Road
Corrosive liquid is formulated by the acid iodide aqueous solution, hydrochloric acid and water, and volume proportion is：The acid iodide aqueous solution:Hydrochloric acid：Water=1:1:x（5<x<
20）, wherein, the molar concentration of the acid iodide aqueous solution is 0.1 ~ 0.4mol/L, and the volumetric concentration of hydrochloric acid is 37%, and water is deionized water.
3. the preparation method of AlGaInP film LED chips Cutting Road according to claim 1 or 2, it is characterised in that：Cut
Cut corrosive liquid and 5 are more than to the corrosion rate of AlGaInP material layers and GaP material layers ratio, etching-stop is in GaP material layers.
4. the preparation method of AlGaInP film LED chips Cutting Road according to claim 1 or 2, it is characterised in that：It is rotten
It is 25 ± 5 degree to lose temperature, and etching time is 1 ~ 5 minute.
5. the preparation method of AlGaInP film LED chips Cutting Road according to claim 3, it is characterised in that：Corrosion temperature
Spend for 25 ± 5 degree, etching time is 1 ~ 5 minute.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397616A (en) * | 2020-12-03 | 2021-02-23 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Cutting method and structure of crystalline silicon battery piece |
| CN112592719A (en) * | 2020-08-04 | 2021-04-02 | 中国电子科技集团公司第十一研究所 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01195068A (en) * | 1988-01-29 | 1989-08-04 | Sanyo Electric Co Ltd | Optical printing head |
| CN101783381A (en) * | 2010-01-27 | 2010-07-21 | 厦门市三安光电科技有限公司 | Production method of clad type expansion electrode light-emitting diode |
| CN102544250A (en) * | 2010-12-27 | 2012-07-04 | 同方光电科技有限公司 | Manufacturing method of GaN-based light-emitting diode |
| CN105185883A (en) * | 2015-10-12 | 2015-12-23 | 扬州乾照光电有限公司 | Coarsened-sidewall AlGaInP-base LED and manufacture method thereof |
-
2017
- 2017-09-20 CN CN201710849105.8A patent/CN107731676A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01195068A (en) * | 1988-01-29 | 1989-08-04 | Sanyo Electric Co Ltd | Optical printing head |
| CN101783381A (en) * | 2010-01-27 | 2010-07-21 | 厦门市三安光电科技有限公司 | Production method of clad type expansion electrode light-emitting diode |
| CN102544250A (en) * | 2010-12-27 | 2012-07-04 | 同方光电科技有限公司 | Manufacturing method of GaN-based light-emitting diode |
| CN105185883A (en) * | 2015-10-12 | 2015-12-23 | 扬州乾照光电有限公司 | Coarsened-sidewall AlGaInP-base LED and manufacture method thereof |
Non-Patent Citations (1)
| Title |
|---|
| M. ZAKNOUNE ET AL: ""Nonselective wet chemical etching of GaAs and AlGaInP for device applications"", 《JOURNAL OF VACUUM SCIENCE ＆ TECHNOLOGY B》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112592719A (en) * | 2020-08-04 | 2021-04-02 | 中国电子科技集团公司第十一研究所 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
| CN112397616A (en) * | 2020-12-03 | 2021-02-23 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Cutting method and structure of crystalline silicon battery piece |
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