CN102592983B - Wet etching method of Mn-Co-Ni-O thermosensitive thin film - Google Patents
Wet etching method of Mn-Co-Ni-O thermosensitive thin film Download PDFInfo
- Publication number
- CN102592983B CN102592983B CN201210026626.0A CN201210026626A CN102592983B CN 102592983 B CN102592983 B CN 102592983B CN 201210026626 A CN201210026626 A CN 201210026626A CN 102592983 B CN102592983 B CN 102592983B
- Authority
- CN
- China
- Prior art keywords
- etching
- wet etching
- sample strip
- photoresist
- thermosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- ing And Chemical Polishing (AREA)
- Micromachines (AREA)
- Weting (AREA)
Abstract
The invention discloses a wet etching method of a Mn-Co-Ni-O thermosensitive thin film, which comprises the following steps of firstly performing positive resist lithography using positive photoresist to obtain a required pattern, protecting a required mesa graph by photoresist, secondly subjecting samples to etching by means of an onsite prepared reducibility etching liquid, estimating the required time of etching according to the thickness of sample-cuttings, cleaning with acetone and alcohol after completing etching, and blow-drying the sample-cuttings with dry nitrogen. According to the wet etching method of the Mn-Co-Ni-O thermosensitive thin film, wet etching of Mn-Co-Ni-O thermosensitive materials is achieved. Further, the etching rate is improved by appropriately increasing the temperature and adding an appropriate quantity of hydrochloric acids within tolerance range of the photoresist. Compared with dry etching, the wet etching has the advantages that the efficiency is greatly improved, thermistor edges are orderly, lateral etching ratio is small, and pattern quality is high.
Description
Technical field
Patent of the present invention is applicable to a kind of wet-etching technology of thermosensitive material film, in particular, is involved in a kind of wet etching of Mn-Co-Ni-O thermosensitive film of spinel structure.
Background technology
Mn-Co-Ni-O series material is a kind of thermo-sensitive material with very high negative temperature coefficient of resistance.This kind of material has broad spectral response and very large operating temperature range and has the excellent specific properties such as performance long-term stability, has very important application aspect Uncooled infrared detection.And Mn
1.56co
0.96ni
0.48o
4(the lower MCN that is called for short) has the minimum resistivity of this class series material, therefore in Mn-Co-Ni-O thermo-sensitive material, occupies critical role [seeing document 1-4].The use chemical solution methods such as the Hou Yun of Shanghai technology physics institute have successfully been prepared high-quality MCN polycrystal film on hot-pressure oxidation aluminium substrate, make miniaturization and the integrated possibility that becomes of this type of thermistor detector part, expanded greatly the application prospect [seeing document 1] of this material.
Under room temperature, MCN thin-film material resistivity is higher, and this becomes a key factor of such material application of aspects of restriction.For reducing the resistance of temperature-sensitive device, boost device performance, often needs the thicker MCN film (thickness is more than 2 microns) of preparation to reduce its all-in resistance.The etching technics of thicker MCN becomes a major issue needing solution badly.
Traditional dry etch process utilizes plasma to carry out etching to film.Common two kinds of physical etchings and the physical chemistry etchings that comprise.Speed faster physical chemistry etching to take reactive ion etching technology (RIE) be representative, its shortcoming is that cost is higher, and need to find suitable molecular gas [seeing document 5].It is representative that common physical etchings method be take high energy Ar ion sputtering.Experiment shows that its etching speed to MCN film is slower, (ion energy 500ev, beam current density 0.65mA/cm under common experimental conditions
2), within 1 hour, etch thicknesses can only reach 1-1.2 micron, and vacuum is prepared also to need to spend a few hours, and generally labor intensive material resources are more, inefficiency [seeing document 6].If can realize reliable and stable wet-etching technology, can greatly increase work efficiency, save the human and material resources in laboratory.
MCN film is a kind of ternary oxide semiconductive thin film of complexity, and wherein the cation of main body is Mn ion, and has+2 ,+3 ,+4 appraise at the current rate [seeing document 7,8].Due to main body, to be that Mn ion and its appraise at the current rate comparatively complicated, for call for Votes for simplicity, below will take manganese dioxide and set forth the basic experiment thinking of wet etching method as example.
Previous work shows, MCN film can resistance to nitric acid, and dilute sulfuric acid and hydrofluoric acid corrosion, can alkaline-resisting solution corrosion.The mixed liquor of use concentrated hydrochloric acid and hydrogen peroxide can be used for the photoetching corrosion of veryyer thin film.What concentrated hydrochloric acid corroded Mn oxide utilization is reproducibility reaction, take manganese dioxide as example, can use for reference classical preparation of chlorine reaction:
In the formula of hydrochloric acid hydrogen peroxide, what hydrogen peroxide played in etching liquid is the effect of heating.Experimental results show that this oxide material has catalytic action equally to hydrogen peroxide, can make hydrogen peroxide occur to decompose and produce oxygen and emit heat.Can use for reference manganese dioxide catalysis decomposing hydrogen dioxide solution reaction equation:
In etching process, for thinner MCN film, can use the good photoresist of acid resistance to withstand at short notice the corrosion (corrosion of using AZ1500 can resistance to concentrated hydrochloric acid-hydrogen peroxide to fill a prescription approximately 100 seconds) of strong acid.In at this moment, can complete the etching of thinner MCN.For thicker MCN film (2 microns are above), concentrated hydrochloric acid-hydrogen peroxide formula will be in corrosion process heavy damage photoresist, make the lateral erosion than excessive; And hydrogen peroxide fast decoupled also loses heating effect gradually, and this reduces chemical reaction rate, and etching slows down gradually, and whole etching process can not be carried out with more stable speed.
For solution photoresist is not corrosion-resistant and inhomogeneous these two problems of reaction rate, can consider not add hydrogen peroxide, suitably reduce the acidity of etching liquid, improve reproducibility, to reduce the corrosiveness to photoresist; The temperature of controlling well in addition in etching process, guarantees that etch rate is stable.
Halogen ion strengthens along with radius increases reproducibility, to conventional Cl
-, Br
-, I
-, reproducibility power is followed successively by order:
Cl
-＜Br
-＜I
-
Use for reference halogen Cl
-, I
-typical redox reaction with manganese dioxide:
MnO
2+2I
-+4H
+→Mn
2++2H
2O+I
2
Can find out, the reproducibility of iodide ion is stronger, does not need heating can effectively Mn oxide be reduced to soluble divalent manganesetion.In addition, elemental iodine has higher solubility in iodide solution, therefore the elemental iodine producing in the etching process of several minutes can't be separated out.Therefore the main course of reaction of wet etching should be the redox reaction between iodine anion and value Mn ion, and another part is the combination reaction between oxide and acid.Utilize the iodide ion in KI powder that reproducibility is provided, it is acid that hydrochloric acid provides, and the temperature conditions of controlling well in etching process can complete the wet etching of MCN film preferably.
Above-mentioned related document is as follows:
1.Hou，Y.，et al.，Characterization of Mn(1.56)Co(0.96)Ni(0.48)O(4)films for infrared detection.Applied Physics Letters，2008.92(20).
2.Kanade，S.A.and V.Puri，Composition dependent resistivity NTC of thick film Ni(1-x)CoxMn2O4：(0＜＝x＜＝1)NTC thermistors.Materials Letters，2006.60(11)：p.1428-1431.
3.Metz，R.，Electrical properties of NTC thermistors made of manganite ceramics of general spinel structure：Mn3-x-x′MxNx′O4(0＜＝x plus x′＜＝1；M and N being Ni，Co or Cu).Aging phenomenon study Journal of Materials Science，2000.35(18)：p.4705-4711.
4.Shpotyuk，O.，et al.，Technological modification of spinel-based CuxNi1-x-yCo2yMn2-yO4 ceramics.Journal of the European Ceramic Society，2001.21(10-11)：p.2067-2070.
5.Choe，D.H.G.，C.Knapp，and A.Jacob，Production Rie.1.Selective Dielectric Etching.Solid State Technology，1984.27(4)：p.177-183.
6.Yuba，Y.，et al.，Ion-Beam Etching of Inp.1.Ar Ion-Beam Etching and Fabrication of Grating for Integrated-Optics.Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers，1983.22(7)：p.1206-1210.
7.Yokoyama，T.，et al.，Preparation and electrical properties of sintered bodies composed of monophase spinel Mn(2-X)Co2XNi(1-X)O-4(0＜＝x＜＝1)derived from rock-salt-type oxides.Japanese Journal of Applied Physics Part1-Regular Papers Short Notes & Review Papers，1996.35(11)：p.5775-5780.
8.Wu，J.，et al.，Structural，electrical，and magnetic properties of Mn(2.52-x)Co(x)Ni(0.48)O(4) films.Journal of Applied Physics，2010.107(5).
Summary of the invention
The object of the present invention is to provide a kind of method of wet etching, use hydrochloric acid-liquor kalii iodide as corrosive liquid, in conjunction with suitable etching technics, utilize the reproducibility of iodide to realize the wet etching of Mn-Co-Ni-O thermosensitive film prepared by sol-gal process.Solved the inefficient problem of etching in existing dry etching technology, and in wet etching, hydrochloric acid hydrogen peroxide formula destroys the problem that photoresist makes etching failure.
The object of the present invention is achieved like this:
1, clean.Be taken at respectively the MCN sample strip of growing in alumina substrate several pieces.Be placed in the glass culture dish ultrasonic cleaning that fills acetone.With tweezers, take out experiment slice, be placed in and contain spirituous glass culture dish ultrasonic cleaning.Deionized water, alcohol rinse, and clean nitrogen dries up test film stand-by.
2, whirl coating photoetching.In darkroom, carry out whirl coating operation.Use positive photoresist whirl coating, prebake, exposure, develops, and obtains the figure of required protection.After washed with de-ionized water, dry up.Rear baking, takes out standby.
3, preparation etching liquid.The reproducibility of use KI completes the corrosion of Mn-Co-Ni-O thermosensitive film; Use hydrochloric acid that sour environment is provided, to improve etch rate.In 2mol/L hydrochloric acid, add KI powder, the ratio that adds 5 grams to 8.3 grams according to every 10 milliliters of acid solutions adds KI powder, shakes up, and obtains faint yellow clarification etching liquid.
4, sample thief, carries out wet etching.
According to etch rate and thickness, estimate etch period.With polytetrafluoroethylene tweezers, clamp sample strip, put it in etching liquid and shake gently back and forth, press manual time-keeping simultaneously.Etch period with reference to estimating, when transparent alumina base egative film naked eyes can be distinguished, takes out sample strip with tweezers, with deionized water, rinses well.
5, remove photoresist, clean.
Use supersonic cleaning machine to carry out acetone ultrasonic cleaning, each 2-5 minute of alcohol ultrasonic cleaning to print, remove photoresist.Use deionized water that sample strip is rinsed well, with clean nitrogen, dry up.
The advantage of this patent is, etching liquid utilizes the strong reducing property of iodide ion to realize the wet etching of manganese cobalt nickel oxygen thermosensitive material film, and utilizes hydrochloric acid to improve the acidity of etching liquid, to guarantee the speed of reaction, little to the destruction of photoresist; Etching efficiency far is higher than dry etching; Provide the etch rate under various conditions of mixture ratios, can make reference according to the numerical value providing in examples of implementation, prepared etching solution, response estimator required time; Etching gained graphical quality is high, and table top lateral erosion is than little.
Accompanying drawing explanation:
Fig. 1, wet etching flow chart.
The photoetching adhesive tape of Fig. 2, two kinds of sizes (200 μ m * 100 μ m, 500 μ m * 700 μ m).
The action effect comparison to AZ1500 photoresist of Fig. 3, two kinds of formulas.
The MCN film wet etching that Fig. 4,2 μ m are thick finally completes effect.
Embodiment:
1, clean.Be taken at respectively the MCN sample strip of growing in 20mm * 20mm alumina substrate several pieces, thickness is 4-6 μ m.Be placed in the glass culture dish ultrasonic cleaning 3 minutes that fills acetone.With tweezers, take out experiment slice, be placed in and contain spirituous glass culture dish ultrasonic cleaning 3 minutes.Deionized water, alcohol rinse, and clean nitrogen dries up test film stand-by.
2, whirl coating photoetching.In darkroom, carry out whirl coating operation.Use AZ1500 positive photoresist, rotating speed 3000r/min, presses 65 degrees Celsius of preliminary dryings 30 minutes at 30 seconds time in baking oven.Exposure, develops, and required resistor stripe is respectively by 200 μ m * 100 μ m, and the photoresist of 500 μ m * 700 μ m is protected.After washed with de-ionized water, dry up, rear baking 30 minutes, takes out standby.
3, preparation etching liquid.
(1) preparation acid solution, standby.Pipette respectively concentrated hydrochloric acid (about 10mol/L) and deionized water and prepare mixed liquor by the volume ratio of 3: 7.For example get respectively 6ml hydrochloric acid and 14ml water is made into acid solution.Think that solution density is approximately 1g/ml, acid solutions is 3mol/L.Peek milliliter acid solution is placed in 27 degrees Celsius of water-bath numbers minute (guaranteeing constant temperature).
(2) ratio that adds 5 grams of KIs according to every 10 milliliters of acid solutions adds KI powder, shakes up, and obtains faint yellow clarification etching liquid.
4, sample thief, carries out wet etching.
According to etch rate, estimate etch period.With polytetrafluoroethylene tweezers, clamp sample strip, put it in etching liquid and shake gently back and forth, press manual time-keeping simultaneously.After etching completes, etching liquid presents brown color (may be elemental iodine) to a certain degree.Etch period with reference to estimating, when transparent alumina base egative film naked eyes can be distinguished, takes out sample strip with tweezers, with deionized water, rinses well.
5, remove photoresist, clean.
Use supersonic cleaning machine to carry out acetone ultrasonic cleaning, alcohol ultrasonic cleaning each 3 minutes to print, remove photoresist.Use deionized water that sample strip is rinsed well, with clean nitrogen, dry up.
Embodiment 1
The fixing concentration of iodide ion concentration and hydrochloric acid, investigates the situation of change of corrosion rate under condition of different temperatures.
The concentrated hydrochloric acid of mass fraction 36%, deionized water and KI are made to etching liquid by the proportioning of 3ml: 7ml: 5g, under the water-bath environment of 27 ℃ and 32 ℃, carry out etching experiment.Corrosion process completes in after configuring corrosive liquid 5 minutes, and etching time is 1.5 minutes.Use step instrument to measure shoulder height, calculate average etching rate:
Table 1.c (I
-)=3molL
-1, c (H
+)=3molL
-1time, the etch rate under condition of different temperatures
| Temperature (℃) | 22 | 27 | 32 |
| Etch rate (nm/min) | 1050 | 1530 | 1800 |
Embodiment 2
Fixedly concentration of hydrochloric acid is 2molL
-1, the situation of change of etch rate under different iodide ion concentration conditions.
Table 2.27 ℃, H
+concentration is 2molL
-1time, different I
-etch rate under concentration
Embodiment 3
Table 3 provides after the solution preparing by examples of implementation 1 is placed specific duration (2 minutes, 6 minutes, 11 minutes) in indoor common fluorescent lamp illumination and the packing less situation of etching liquid and carries out etching, draws the numerical value of etch rate.Iodide ion in etching liquid is strong reducing property, can be dissolved in the dioxygen oxidation in etching liquid, and under illumination condition, this process is faster, has affected reaction rate, and therefore reaction should be carried out in darkroom.
The situation that the etch rate of table 3.1～12 minute reduces
Fig. 1 has provided concrete implementation step schematic flow sheet.Use microscope to obtain photoetching offset plate figure (Fig. 2), etching liquid finally completes effect (Fig. 4) to the action effect of photoresist (Fig. 3) and wet etching.
What Fig. 2 provided is the photoetching adhesive tape (200 μ m * 100 μ m, 500 μ m * 700 μ m) of two kinds of sizes.
Fig. 3 provides be hydrochloric acid hydrogen peroxide formula (left figure) and hydrochloric acid KI formula (right figure, the ratio of 5 grams of KIs of every 10 milliliters of 3mol/L hydrochloric acid solutions interpolation join corrosive liquid) action effect comparison to AZ1500 photoresist.Under 27 ℃ of water bath condition, place 180 seconds respectively, compare the action effect of two kinds of corrosive liquids to photoresist.Hydrochloric acid hydrogen peroxide formula has destroyed photoresist and has made etching failure as seen from the figure, and this etching liquid destroys hardly photoresist in corrosion process.
Fig. 4 has provided the thick MCN film wet etching of 2 μ m and has finally completed effect.
Claims (1)
1. a wet etching method for Mn-Co-Ni-O thermosensitive film, is characterized in that comprising the following steps:
1) clean: be taken at respectively the Mn-Co-Ni-O thermosensitive film sample strip of growing in alumina substrate several pieces, be placed in the glass culture dish ultrasonic cleaning that fills acetone, with tweezers, take out sample strip, be placed in and contain spirituous glass culture dish ultrasonic cleaning, deionized water, alcohol rinse, and clean nitrogen dries up sample strip stand-by;
2) whirl coating photoetching: in darkroom, carry out whirl coating operation, use positive photoresist whirl coating, prebake, exposure, develops, and obtains the figure of required protection, after washed with de-ionized water, dries up, and rear baking, takes out standby;
3) preparation etching liquid: the reproducibility of use KI completes the corrosion of Mn-Co-Ni-O thermosensitive film; Use hydrochloric acid that sour environment is provided, to improve etch rate, add KI powder in 2mol/L hydrochloric acid, the ratio that adds 5 grams to 8.3 grams according to every 10 milliliters of acid solutions adds KI powder, shakes up, and obtains faint yellow clarification etching liquid;
4) sample thief sheet, carry out wet etching, according to etch rate and thickness, estimate etch period, with polytetrafluoroethylene tweezers, clamp sample strip, put it in etching liquid and shake gently back and forth, press manual time-keeping simultaneously, with reference to the etch period of estimating, when transparent alumina base egative film naked eyes can be distinguished, with tweezers, sample strip is taken out, with deionized water, rinse well;
5) remove photoresist, clean, use supersonic cleaning machine to carry out acetone ultrasonic cleaning, each 2-5 minute of alcohol ultrasonic cleaning to sample strip, remove photoresist; Use deionized water that sample strip is rinsed well, with clean nitrogen, dry up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210026626.0A CN102592983B (en) | 2012-02-07 | 2012-02-07 | Wet etching method of Mn-Co-Ni-O thermosensitive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210026626.0A CN102592983B (en) | 2012-02-07 | 2012-02-07 | Wet etching method of Mn-Co-Ni-O thermosensitive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102592983A CN102592983A (en) | 2012-07-18 |
| CN102592983B true CN102592983B (en) | 2014-04-09 |
Family
ID=46481458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210026626.0A Active CN102592983B (en) | 2012-02-07 | 2012-02-07 | Wet etching method of Mn-Co-Ni-O thermosensitive thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102592983B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110044803A (en) * | 2019-04-23 | 2019-07-23 | 蚌埠中光电科技有限公司 | A method of the measurement glass etching performance of resistance to HF |
| CN112592719B (en) * | 2020-08-04 | 2022-06-28 | 中国电子科技集团公司第十一研究所 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
| JP7342288B2 (en) | 2020-12-18 | 2023-09-11 | 株式会社トクヤマ | Processing method for transition metal semiconductors and reducing agent-containing processing solution for transition metal oxides |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153398A (en) * | 1995-10-06 | 1997-07-02 | 松下电器产业株式会社 | Method for fabricating dielectric device |
| CN1173554A (en) * | 1997-07-09 | 1998-02-18 | 王振田 | Electrolyte for Etching-less low temp electroplating iron, nickel, manganese, titanium alloy |
| CN101603861A (en) * | 2009-07-22 | 2009-12-16 | 中国电子科技集团公司第十一研究所 | A kind of thermal isolation structure of infrared detector and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4032916B2 (en) * | 2001-11-28 | 2008-01-16 | 三菱化学株式会社 | Etching solution |
-
2012
- 2012-02-07 CN CN201210026626.0A patent/CN102592983B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153398A (en) * | 1995-10-06 | 1997-07-02 | 松下电器产业株式会社 | Method for fabricating dielectric device |
| CN1173554A (en) * | 1997-07-09 | 1998-02-18 | 王振田 | Electrolyte for Etching-less low temp electroplating iron, nickel, manganese, titanium alloy |
| CN101603861A (en) * | 2009-07-22 | 2009-12-16 | 中国电子科技集团公司第十一研究所 | A kind of thermal isolation structure of infrared detector and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Infrared detectors based on thin film thermistor of ternary Mn-Ni-Co-O on micro-machined thermal isolation structure;Shivaprasad Karanth等;《Sensors and Actuators A: Physical》;20090503;第153卷(第1期);第69-75页 * |
| Shivaprasad Karanth等.Infrared detectors based on thin film thermistor of ternary Mn-Ni-Co-O on micro-machined thermal isolation structure.《Sensors and Actuators A: Physical》.2009,第153卷(第1期),69-75. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102592983A (en) | 2012-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Nicholas et al. | Measurements and modeling of Sm0. 5Sr0. 5CoO3− x–Ce0. 9Gd0. 1O1. 95 SOFC cathodes produced using infiltrate solution additives | |
| Xie et al. | Processing and pretreatment effects on vanadium transport in nafion membranes | |
| Baumann et al. | Quantitative comparison of mixed conducting SOFC cathode materials by means of thin film model electrodes | |
| Mauvy et al. | Electrode properties of Ln2NiO4+ δ (Ln= La, Nd, Pr): AC impedance and DC polarization studies | |
| Wang et al. | Investigation on capacitance mechanisms of Fe3O4 electrochemical capacitors | |
| Kogler et al. | Comparison of electrochemical properties of La0. 6Sr0. 4FeO3-δ thin film electrodes: Oxidizing vs. reducing conditions | |
| Tang et al. | Effect of graphite orientation and lithium salt on electronic passivation of highly oriented pyrolytic graphite | |
| CN102592983B (en) | Wet etching method of Mn-Co-Ni-O thermosensitive thin film | |
| Wang et al. | Sulfur deposition and poisoning of La0. 6Sr0. 4Co0. 2Fe0. 8O3-δ cathode materials of solid oxide fuel cells | |
| Rupp et al. | Electronic and ionic conductivity of La0. 95Sr0. 05Ga0. 95Mg0. 05O3-δ (LSGM) single crystals | |
| CN109314146B (en) | Semiconductor device, pH sensor, biosensor, and method for manufacturing semiconductor device | |
| Prestat et al. | Oxygen reduction at thin dense La 0.52 Sr 0.48 Co 0.18 Fe 0.82 O 3–δ electrodes | |
| Fabbri et al. | Mixed protonic/electronic conductor cathodes for intermediate temperature SOFCs based on proton conducting electrolytes | |
| Ehn et al. | Electrochemical investigation of nickel pattern electrodes in H2/H2O and CO/CO2 atmospheres | |
| Ohzeki et al. | Preparation of LaNi1− xFexO3 single phase and characterization of their phase transition behaviors | |
| Murakami et al. | Activation of LSM electrode related to the potential oscillation under cathodic polarization | |
| Jeon et al. | Electrical conductivity and thermoelectric power of La2NiO4+ δ | |
| CN103526263B (en) | There is the Cr doped Ti O of room temperature ferromagnetic effect 2the preparation method of nano-magnetic thin films | |
| WO2017033862A1 (en) | Proton-conductive complex oxide and fuel cell using same as electrolyte | |
| Islam et al. | Effects of deposition variables on spray-deposited MnO2 thin films prepared from Mn (C2H3O2) 2· 4H2O | |
| Basu et al. | Liquid-phase deposition of Al2O3 thin films on GaN | |
| Nikolova et al. | Anodic behaviour of stainless steel covered with an electrochemically deposited Ce2O3–CeO2 film | |
| Wang et al. | Estimation of the Chemical Diffusion Coefficient of H 2 O in Ba3Ca1. 18Nb1. 82 O (9− δ) from Conductivity Measurements | |
| JPH07263429A (en) | Selective etching liquid | |
| Rao et al. | Aging effects of KOH+ NH2OH solution on the etching characteristics of silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |