CN105304769A - Preparation method for four-element chip with enhanced GaP rough surface - Google Patents
Preparation method for four-element chip with enhanced GaP rough surface Download PDFInfo
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- CN105304769A CN105304769A CN201510601162.5A CN201510601162A CN105304769A CN 105304769 A CN105304769 A CN 105304769A CN 201510601162 A CN201510601162 A CN 201510601162A CN 105304769 A CN105304769 A CN 105304769A
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- element chip
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000004094 surface-active agent Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 230000002708 enhancing effect Effects 0.000 claims description 11
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 230000000717 retained effect Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 238000005530 etching Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a preparation method for a four-element chip with an enhanced GaP rough surface. The method comprises the steps of (1) evaporating an AuBe film on the surface of a GaP window layer of an LED four-element chip as a p-type electrode, diffusing Au and Be respectively to the GaP window layer through the annealing process, coating the positive photoresist on the AuBe film, then photoetching, and keeping the electrode patterns of the positive photoresist on the surface of the AuBe film; (2) configuring the AuBe corrosive liquid; (3) under the protection effect of the electrode patterns of the positive photoresist, preparing a metal electrode and an enhanced GaP rough surface through the corrosion process of the configured AuBe corrosive liquid. According to the technical scheme of the invention, organic surface active agents are added in the corrosive liquid, so that all Au and Be molecules, diffused to the GaP, can be completely etched off during the etching process of the LED four-element chip. the GaP rough surface is enhanced and the angle of emergence is enabled to be more stable. Meanwhile, the light extraction efficiency of the LED four-element chip is improved and the electrode is prevented from being damaged at the same time.
Description
Technical field
The present invention relates to a kind of preparation method strengthening LED tetra-element chip of GaP rough surface, belong to LED tetra-element chip preparing technical field.
Background technology
LED is first commercial compound semiconductor come into the market, and LED the earliest adopts the ruddiness GaAsPLED that makes of LPE (rheotaxial growth) technology, but the performance of these LED is relative to lower current.After the nineties in 20th century, because new material and new epitaxy technology are incorporated in the research of red-light LED, the GaAs base AlGaInPLED utilizing MOCVD method (MOCVD) to make substantially improves LED performance that is red and yellow spectrum district.
The fifties in last century, under the effort of many well-known research institution that IBMThomasJ.WatsonResearchCenter is representative, is that the III – V race semiconductor of representative emerges rapidly in semiconductor light emitting field with GaAs.Afterwards along with the appearance of metal-organic chemical vapor deposition equipment (MOCVD) technology, make the growth of high-quality III – V race semiconductor breach technology barriers, the semiconductor light emitting diode device of various wavelength floods the market in succession.Because semiconductor light-emitting-diode has the speciality such as efficiency is high, the life-span long, anti-strong mechanical shock relative to current luminescent device, be worldwide counted as illuminating device of new generation.But due to the refractive index general higher (GaP:3.2) of III – V race semiconductor, this is limited by interface total reflection phenomenon with regard to the light causing the light-emitting zone of LED and send when shining in air through chip surface, only has the light of few part can shine device exterior (GaP is about 2.4%).Interface total reflection phenomenon causes the external quantum efficiency of LED low, is the main cause that restriction LED substitutes existing illuminating device.
Surface roughening is improving a kind of method fairly simple in the method for external quantum efficiency, this side's ratio juris is: if the light that device sends is not absorbed in inside, then light can at device inside interreflection, until by with the angle outgoing being less than interface critical angle to outside.If the geometry that can change device inside and outside makes its surface roughening, destroy the total reflection of light at device inside like this, improve the probability of photon outgoing significantly.This structure is proposed by people such as I.Schnitzer the earliest, and they obtained coarse LED surface at that time, employed nature lithography and were formed by etching.
Present stage is the roughening realizing GaP Window layer; generally adopt the mode of chemical corrosion method or ICP etching method to realize; because ICP etching method is more to technique, equipment requirement, chemical corrosion method realizes the coarse of GaP Window layer and turns to the general method of present stage LED producer large-scale production.
Chinese patent literature the CN104600168A disclosed preparation method of GaP rough surface " on the GaAs base light emitting diode chip " is the corrosive liquid that all can be caused corrosiveness by configuration to Au, GaP, preparation type-p metal electrode and coarse GaP exiting surface; The method can cause corrosion to GaP because of corrosive liquid, therefore relatively stricter to the requirement of process aspect, and GaP corrosion is wayward, and GaP below metal electrode can be caused to sustain damage, and wayward shooting angle.
Summary of the invention
For the deficiency that existing conventional GaP rough surface technology of preparing exists, the present invention proposes the preparation method of LED tetra-element chip of a kind of simple flow, enhancing GaP rough surface with short production cycle.
The preparation method of LED tetra-element chip of enhancing GaP rough surface of the present invention, comprises the steps:
(1) LED tetra-element chip GaP Window layer surface evaporation on AuBe film as p-type electrode, make Au and Be molecular diffusion to GaP Window layer by annealing, positive photoresist is coated again on described AuBe film, then carry out photoetching, retain the electrode pattern of positive photoresist at AuBe film surface;
In described AuBe film, the quality accounting of Be is 2%-5%.
The thickness of described AuBe film is 1.8 μm.
Described annealing temperature 450-550 DEG C, annealing time 5-15 minute.
The thickness of described positive photoresist is 41.8-3.6 μm.
(2) AuBe corrosive liquid is configured;
Iodine, KI and pure water are mixedly configured into mixed liquor according to the ratio of mass ratio 0.8 ~ 1:3 ~ 4:15 ~ 18, then in mixed liquor, add the organic surface active agent of mixeding liquid volume 0.1% ~ 0.5%, be configured to AuBe corrosive liquid;
Content of iodine >=99% wherein in iodine, KI content >=99% in KI.
Described organic surface active agent can select the absolute ethyl alcohol of concentration >=99.5%, to make operation more simple and practical.
(3), under the positive photoresist electrode pattern retained in step (1) is protected, the AuBe corrosive liquid corrosion configured by step (2) is prepared metal electrode and strengthens GaP rough surface;
LED tetra-element chip in step (1) is put into corrosive liquid prepared by step (2) to corrode, by the effect of organic surface active agent in corrosion process, reduce its surface tension, can Au and the Be molecule diffusing to GaP be corroded totally completely in corrosion process, form pitting on GaP surface; Remove positive photoresist again after etching, obtain metal electrode and enhance GaP rough surface.
Described corrosion is corroded 45 seconds-150 seconds under temperature 45-50 DEG C and humidity 30%-65%.
Described corrosion carries out in 1 hour add organic surface active agent in corrosive liquid after.
This invention simplifies technological process, improve operating efficiency, improve light extraction efficiency, stabilize chip quality; By adding organic surface active agent in corrosive liquid, Au and the Be molecule diffusing to GaP can all be eroded when corroding by LED tetra-element chip completely, enhance GaP rough surface, obtain more stable shooting angle, promote the light extraction efficiency of LED tetra-element chip and ensure that electrode is injury-free.
Accompanying drawing explanation
Fig. 1 is the LED tetra-element chip cutaway view that step in the present invention (1) obtains.
Fig. 2 is the LED tetra-element chip cutaway view that step in the present invention (3) obtains.
In figure, 1, substrate, 2, GaP Window layer, 3, AuBe film, 4, positive photoresist; 5, Au and the Be molecule of GaP is diffused to.
Embodiment
The preparation method of LED tetra-element chip of enhancing GaP rough surface of the present invention, comprises step as follows:
(1) on the surperficial evaporation of the GaP Window layer 2 in LED quaternary chip substrate 1, the AuBe film 3 of thickness 1.8 μm is as P type metal electrode, and wherein the quality accounting of Be is 2%-5%.Make GaP Window layer 2 with Au and the Be molecule 5 diffusing to GaP by high annealing again.Annealing temperature 450-550 DEG C, time 5-15 minute.On described AuBe film 3, coat 1.8-3.6 μm of thick positive photoresist 4 again, then carry out photoetching, retain the electrode pattern of positive photoresist on surface.
(2) AuBe corrosive liquid is configured;
Concrete configuration method is: iodine, KI and pure water are mixedly configured into mixed liquor according to the ratio of mass ratio 0.8 ~ 1:3 ~ 4:15 ~ 18, content of iodine >=99% wherein in iodine, KI content >=99% in KI.In mixed liquor, add the organic surface active agent of mixeding liquid volume 0.1% ~ 0.5% again, be configured to AuBe corrosive liquid.Organic surface active agent can select the absolute ethyl alcohol of concentration >=99.5%, to make operation more simple and practical.
(3), under the positive photoresist electrode pattern retained in step (1) is protected, the AuBe corrosive liquid corrosion configured by step (2) is prepared electrode and strengthens GaP rough surface
Detailed process is: LED tetra-element chip step (1) prepared is put into corrosive liquid prepared by step (2) and carried out corrosion 45 seconds-150 seconds, corrode in 1 hour after corrosion process need add organic surface active agent in corrosive liquid, temperature 45-50 DEG C, corrode under humidity 30%-65%.By the effect of organic surface active agent in corrosion process, can Au, Be molecule diffusing to GaP be corroded totally completely in corrosion process, form pitting on GaP surface; Remove positive photoresist again after etching, obtain P type metal electrode and enhance GaP rough surface.
Claims (9)
1. strengthen a preparation method for LED tetra-element chip of GaP rough surface, it is characterized in that, comprise the steps:
(1) LED tetra-element chip GaP Window layer surface evaporation on AuBe film as p-type electrode, make Au and Be molecular diffusion to GaP Window layer by annealing, positive photoresist is coated again on described AuBe film, then carry out photoetching, retain the electrode pattern of positive photoresist at AuBe film surface;
(2) AuBe corrosive liquid is configured;
Iodine, KI and pure water are mixedly configured into mixed liquor according to the ratio of mass ratio 0.8 ~ 1:3 ~ 4:15 ~ 18, then in mixed liquor, add the organic surface active agent of mixeding liquid volume 0.1% ~ 0.5%, be configured to AuBe corrosive liquid;
(3), under the positive photoresist electrode pattern retained in step (1) is protected, the AuBe corrosive liquid corrosion configured by step (2) is prepared metal electrode and strengthens GaP rough surface.
2. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, it is characterized in that, in described step (1), in AuBe film, the quality accounting of Be is 2%-5%.
3. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, it is characterized in that, in described step (1), the thickness of AuBe film is 1.8 μm.
4. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, is characterized in that, the annealing temperature 450-550 DEG C in described step (1), annealing time 5-15 minute.
5. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, it is characterized in that, in described step (1), the thickness of positive photoresist is 41.8-3.6 μm.
6. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, is characterized in that, content of iodine >=99% in described step (2) in iodine, KI content >=99% in KI.
7. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, it is characterized in that, in described step (2), the absolute ethyl alcohol of concentration >=99.5% selected by organic surface active agent.
8. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, is characterized in that, the corrosion in described step (3) is corroded 45 seconds-150 seconds under temperature 45-50 DEG C and humidity 30%-65%.
9. the preparation method of LED tetra-element chip of enhancing GaP rough surface according to claim 1, it is characterized in that, the corrosion in described step (3) carries out in 1 hour add organic surface active agent in corrosive liquid after.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510601162.5A CN105304769A (en) | 2015-09-21 | 2015-09-21 | Preparation method for four-element chip with enhanced GaP rough surface |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510601162.5A CN105304769A (en) | 2015-09-21 | 2015-09-21 | Preparation method for four-element chip with enhanced GaP rough surface |
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| CN105304769A true CN105304769A (en) | 2016-02-03 |
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| CN201510601162.5A Pending CN105304769A (en) | 2015-09-21 | 2015-09-21 | Preparation method for four-element chip with enhanced GaP rough surface |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895750A (en) * | 2016-04-28 | 2016-08-24 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing GaP rough surface of four-element chip |
| CN112397624A (en) * | 2019-08-16 | 2021-02-23 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of GaP rough surface of GaAs-based LED wafer |
| CN112592719A (en) * | 2020-08-04 | 2021-04-02 | 中国电子科技集团公司第十一研究所 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005116615A (en) * | 2003-10-03 | 2005-04-28 | Dowa Mining Co Ltd | Semiconductor light emitting element and its manufacturing method |
| CN101071831A (en) * | 2006-05-12 | 2007-11-14 | 晶元光电股份有限公司 | Semiconductor light-emitting element and its manufacturing method |
| US20080261340A1 (en) * | 2007-04-18 | 2008-10-23 | Sanken Electric Co., Ltd. | Surface-roughening method |
| CN101409321A (en) * | 2008-11-14 | 2009-04-15 | 厦门乾照光电有限公司 | LED with coarsing interface and manufacturing method thereof |
-
2015
- 2015-09-21 CN CN201510601162.5A patent/CN105304769A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005116615A (en) * | 2003-10-03 | 2005-04-28 | Dowa Mining Co Ltd | Semiconductor light emitting element and its manufacturing method |
| CN101071831A (en) * | 2006-05-12 | 2007-11-14 | 晶元光电股份有限公司 | Semiconductor light-emitting element and its manufacturing method |
| US20080261340A1 (en) * | 2007-04-18 | 2008-10-23 | Sanken Electric Co., Ltd. | Surface-roughening method |
| CN101409321A (en) * | 2008-11-14 | 2009-04-15 | 厦门乾照光电有限公司 | LED with coarsing interface and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895750A (en) * | 2016-04-28 | 2016-08-24 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing GaP rough surface of four-element chip |
| CN112397624A (en) * | 2019-08-16 | 2021-02-23 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of GaP rough surface of GaAs-based LED wafer |
| CN112397624B (en) * | 2019-08-16 | 2021-12-07 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of GaP rough surface of GaAs-based LED wafer |
| CN112592719A (en) * | 2020-08-04 | 2021-04-02 | 中国电子科技集团公司第十一研究所 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
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