CN112582877A - 650nm vertical cavity surface laser and preparation method thereof - Google Patents
650nm vertical cavity surface laser and preparation method thereof Download PDFInfo
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- CN112582877A CN112582877A CN201910934215.3A CN201910934215A CN112582877A CN 112582877 A CN112582877 A CN 112582877A CN 201910934215 A CN201910934215 A CN 201910934215A CN 112582877 A CN112582877 A CN 112582877A
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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Abstract
The invention discloses a 650nm vertical cavity surface laser and a preparation method thereof, wherein the laser comprises a GaAs substrate, and a GaAs buffer layer, an N-type DBR layer and an Al layer are sequentially grown on the surface of the GaAs substrate from bottom to topxGa1‑xInP lower waveguide layer, quantum well and AlxGa1‑ xAn InP upper waveguide layer, a P-type DBR layer and a GaAs window layer; the N-type DBR layer comprises low-reflectivity Al from bottom to topxGa1‑xInP/AlInP DBR layer, high-reflectivity AlxGa1‑xInP/AlInP DBR layer, the low-reflectivity AlxGa1‑xInP/AlInP DBR layer is grown on the GaAs buffer layer, and Al isxGa1‑xHigh reflectivity Al of InP lower waveguide layerxGa1‑xAnd growing the InP/AlInP DBR layer. The invention discloses a 650nm vertical cavity surface laser and a preparation method thereof, which have reasonable process design and simple operation, and not only effectively solve the problem of the prior laser equipmentThe material is easy to oxidize, the problem of poor reliability of the laser is solved, meanwhile, the DBR layers with different high and low reflectivity are stacked, the maximum stroke reflection of photons is realized, the active region compound efficiency is improved, the power of the laser is increased, and the practicability is high.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a 650nm vertical cavity surface laser and a preparation method thereof.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) and arrays thereof are novel semiconductor lasers, which are important breakthroughs of photonic devices in integration. The vcsels are structurally very different from conventional side-emitting end-emitting lasers. Emergent light of the end surface emitting laser is vertical to a cleavage plane of the chip; in contrast, the light beam of a VCSEL is perpendicular to the chip surface. This difference in cavity orientation results in a vcsel that has significantly better performance than conventional end-emitting lasers.
The VCSEL with unique performance is easy to realize a two-dimensional planar array, and the end-emitting laser is difficult to realize the two-dimensional array due to side light emitting. The small divergence angle and the circularly symmetrical far and near field distribution greatly improve the coupling efficiency with the optical fiber, which is proved to be more than 90 percent; however, in the end-emitting laser, since the divergence angle is large and the spatial distribution of the light beam is asymmetric, it is difficult to improve the coupling efficiency. Because the length of the optical cavity of the VCSEL is extremely short, the distance between longitudinal modes is enlarged, and single longitudinal mode operation can be achieved in a wide temperature range. The high dynamic modulation frequency and the reduced cavity volume make the spontaneous emission factor of the laser several orders of magnitude higher than that of a common end-emitting laser, which results in great improvement of many physical properties. If the laser can realize the laser with extremely low threshold value or even no threshold value, the power consumption and the thermal energy consumption of the device can be greatly reduced. Because the light is emitted from the surface without being tested after the epitaxial wafer is cleaved and packaged like a conventional end face emitting laser, the on-chip test can be realized, so that the process is simplified, and the manufacturing cost is greatly reduced. In addition, the process is compatible with a planar silicon process, and the optoelectronic integration with an electronic device is convenient to realize.
At present, AlGaAs/AlAs materials are generally adopted by vertical cavity surface emitting lasers, and the reliability of the lasers is poor, which brings inconvenience to practical application of people; the AlGaInP material quaternary compound material has larger forbidden band width in the III-V group semiconductor compound with direct band gap, and can theoretically obtain a visible light laser with the wavelength range of 580-690 nm. It can be epitaxially grown lattice-matched on a GaAs substrate and is therefore considered to be a more suitable material for making red visible lasers.
In view of the above situation, a 650nm vertical cavity surface laser and a method for manufacturing the same are provided, which are one of the problems to be solved.
Disclosure of Invention
The invention aims to provide a 650nm vertical cavity surface laser and a preparation method thereof, which aim to solve the problems in the prior art.
DBR: a distributed bragg mirror, also known as a bragg reflector, is known as a distributedbragreffector.
Carrier concentration: number of electrons or holes per unit volume in doped semiconductors, unit 1E18cm-3Meaning containing 1 x 10 per cubic centimeter18And (4) atoms.
In order to achieve the purpose, the invention provides the following technical scheme:
a650 nm vertical cavity surface laser comprises a GaAs substrate, wherein a GaAs buffer layer, an N-type DBR layer and an Al layer are sequentially grown on the surface of the GaAs substrate from bottom to topxGa1-xInP lower waveguide layer, quantum well and AlxGa1-xAn InP upper waveguide layer, a P-type DBR layer and a GaAs window layer.
At present, when a laser is prepared, AlGaAs/AlAs materials are generally adopted to prepare a DBR layer, the AlGaAs/AlAs DBR layer contains more Al and is easy to oxidize, which greatly affects the reliability of the laser, particularly for lasers with the wavelength less than 800nm, the service life of the laser is more prominent due to the increase of Al components in an active area, and in order to solve the problem of poor reliability of the laser caused by the influence of the oxidation characteristics of the materials, the invention discloses a 650nm vertical cavity laser and a preparation method thereof, wherein the DBR system is prepared by utilizing the AlGaInP/AlInP materials, which effectively improves the reliability of the laser, and compared with the AlGaAs/AlAs material system, the overall performance of the laser is improved by 15-30%.
Meanwhile, the AlInP/AlGaInP laser material works in a visible light (620 + 690nm) waveband, fills the blank of the visible light waveband of the semiconductor laser, has a series of advantages of small volume, light weight, high luminous efficiency, low working voltage, power consumption saving, convenient modulation, stable and reliable work, long service life and the like, and can effectively replace a GaAs/AlGaAs laser in a visible light range due to short luminous wavelength, small focusing light spot and high information recording density.
Preferably, the N-type DBR layer comprises low-reflectivity Al from bottom to topxGa1-xInP/AlInP DBR layer, high-reflectivity AlxGa1-xInP/AlInP DBR layer, the low-reflectivity AlxGa1-xInP/AlInP DBR layer is grown on the GaAs buffer layer, and Al isxGa1-xHigh reflectivity Al of InP lower waveguide layerxGa1-xAnd growing the InP/AlInP DBR layer.
Preferably, the P-type DBR layer is P-type AlxGa1-xInP/AlInP DBR layer.
The invention designs an N-type DBR layer, wherein the N-type DBR layer comprises low-reflectivity Al from bottom to topxGa1-xInP/AlInP DBR layer, high-reflectivity AlxGa1-xThe InP/AlInP DBR layer, N type DBR layer is designed on the basis of DBR principle, when light passes through different mediums, the light will be reflected at the interface, the size of reflectivity will be related to the size of refractive index between mediums, therefore if we stack the films with different refractive indexes alternately and periodically, when light passes through the films with different refractive indexes, because the light reflected by each layer has constructive interference due to the change of phase angle, then combine together to get the strong reflection light; in the technical scheme, low-reflectivity Al is addedxGa1-xInP/AlInP DBR layer, high-reflectivity AlxGa1-xAnd the InP/AlInP DBR layers are stacked, the optical design of the epitaxial layer is realized by utilizing the arrangement of different reflectivity layers, and the overall performance of the epitaxy is further improved.
Preferably, the preparation method of the 650nm vertical cavity surface laser comprises the following steps:
1) preparing a GaAs substrate;
2) growing a GaAs buffer layer on the GaAs substrate;
3) growing an N-type DBR layer on the GaAs buffer layer;
a) low reflectance AlxGa1-xGrowing an InP/AlInP DBR layer;
b) high-reflectivity AlxGa1-xGrowing an InP/AlInP DBR layer;
4) growing Al on N-type DBR layerxGa1-xAn InP lower waveguide layer;
5) in AlxGa1-xGrowing a quantum well on the InP lower waveguide layer;
6) growing Al on quantum wellsxGa1-xAn InP upper waveguide layer;
7) in AlxGa1-xGrowing a P-type DBR layer on the InP upper waveguide layer;
8) growing a GaAs window layer on the P-type DBR layer;
9) packaging to obtain the final product.
Preferably, the method comprises the following steps:
1) preparing a GaAs substrate; preparing the GaAs substrate in the step 1), heating and baking the GaAs substrate in an H2 environment in actual operation, removing water and oxygen on the surface of the GaAs substrate, completing surface heat treatment, providing a fresh interface for crystal growth, and creating a growth environment;
2) growing a GaAs buffer layer on the surface of the GaAs substrate: reducing the temperature to 600-800 ℃, growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 200-500nm, and the carrier concentration is 1E17cm-3-5E18 cm-3(ii) a Growing a GaAs buffer layer in the step 2) for reducing the surface stress of the GaAs substrate and avoiding the defects generated by the direct growth of the N-type DBR layer on the GaAs substrate;
3) growing an N-type DBR layer on the GaAs buffer layer:
a) low reflectance AlxGa1-xAnd (3) growing an InP/AlInP DBR layer: keeping the temperature at 650-700 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.1-0.5, growth period is 10-40 pairs, and carrier concentration is 1E17cm-3-5E18 cm-3；
b) High-reflectivity AlxGa1-xAnd (3) growing an InP/AlInP DBR layer: the temperature is kept at 650-700 ℃ and the Al with low reflectivityxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5-0.99, growth period is 20-40 pairs, and carrier concentration is 1E17cm-3-5E18 cm-3(ii) a In step 3), low-reflectivity Al is firstly carried outxGa1- xGrowing InP/AlInP DBR layer, and growing high-reflectivity Al on the surfacexGa1-xThe InP/AlInP DBR layer is designed in such a way that DBRs with different high and low reflectivities are used, the maximum stroke reflection of photons is realized, the active region recombination efficiency is improved, and the laser power is increased;
4) growing Al on N-type DBR layerxGa1-xAn InP lower waveguide layer: the temperature is kept at 660 ℃ and 700 ℃, and Al with high reflectivityxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.1-0.8, and the thickness is 50-1000 nm; introducing TMIn, TMAl, TMGa and PH3 in the step 4), and reacting and growing Al at the temperature of 660-xGa1-xAn InP lower waveguide layer, undoped;
5) in AlxGa1-xGrowing Al on InP lower waveguide layerxGa1-xInP/GaInP quantum well: at a temperature of 600 ℃ and 700 ℃, in the presence of AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xInP/GaInP quantum well; in step 5) may be in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xThe InP/GaInP quantum well light-emitting region is used for providing an active region for the laser and generating photons;
6) in AlxGa1-xGrowing Al on InP/GaInP quantum wellxGa1-xAn InP upper waveguide layer: at a temperature of 600 ℃ and 700 ℃, in the presence of AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.1-0.8, and the thickness is 50-1000 nm; in step 6)In AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, undoped;
7) in AlxGa1-xGrowing P-type Al on InP upper waveguide layerxGa1-xInP/AlInPDBR layer: the temperature is maintained at 600 ℃ and 700 ℃ in the presence of AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5-0.99, growth period is 20-40 pairs, and carrier concentration is 1E17cm-3-5E18 cm-3(ii) a P-type Al is carried out in step 7)xGa1-xGrowing an InP/AlInPDBR layer;
8) in P type AlxGa1-xGrowing a GaAs window layer on the InP/AlInP DBR layer: the temperature is kept at 500 ℃ and 600 ℃ in the presence of P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer;
9) and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser. And 8) preparing a window layer, and 9) preparing a P-surface electrode structure and an N-surface electrode, and performing operations such as cutting and packaging to obtain the finished laser.
Preferably, in the step 2), the growth temperature of the GaAs buffer layer is 650-750 ℃, the thickness of the GaAs buffer layer is 300-400nm, and the carrier concentration is 3E17cm-3-1E18 cm-3。
Preferably, in the step 4), AlxGa1-xThe thickness of the InP upper waveguide layer is 150-500 nm; in the step 6), AlxGa1-xThe thickness of the InP lower waveguide layer is 150-500 nm.
Preferably, the thickness of the GaAs window layer is 0.1-5 μm, and the carrier concentration is 1E19cm-3-5E20 cm-3。
Preferably, the thickness of the substrate is 250-375 μm, and the thickness of the quantum well is 50-500 nm.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, when the DBR layer is prepared, the thickness of the DBR layer is limited according to the change of a material system, and meanwhile, because the performance of the product is easily reduced when the carrier concentration is too high or the thickness is too thick, the prepared laser cannot be subjected to lasing, the carrier concentration is limited to a certain extent by combining the material system and the thickness, so that the prepared laser has more excellent overall performance and higher reliability.
The invention adopts AlGaInP/AlInP material to prepare DBR system, which effectively improves the reliability of the laser, and compared with AlGaAs/AlAs material system, the invention effectively solves the problem that the reliability of the vertical cavity laser is poor due to the influence of material oxidation characteristic, and the whole performance of the laser is improved by 15-30%.
The invention discloses a 650nm vertical cavity surface laser and a preparation method thereof, the process design is reasonable, the operation is simple, the problems of easy oxidation of the original laser material and poor reliability of the laser are effectively solved, meanwhile, the maximum stroke reflection of photons is realized by stacking DBR layers with different high and low reflectivity, the active region recombination efficiency is improved, the laser power is increased, and the practicability is higher.
Drawings
In order that the present invention may be more readily and clearly understood, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings.
FIG. 1 is a schematic structural diagram of a 650nm vertical cavity surface laser according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
s1: preparing a GaAs substrate;
s2: the temperature is reduced to 600 ℃ in a GaAs linerGrowing a GaAs buffer layer on the bottom surface, wherein the thickness of the GaAs buffer layer is 200nm, and the carrier concentration is 1E17cm-3；
S3: keeping the temperature at 650 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.1, growth period is 10 pairs, and carrier concentration is 1E17cm-3；
S4: maintaining the temperature at 650 ℃ at low reflectance AlxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5, growth period is 20 pairs, and carrier concentration is 1E17cm-3；
S5: keeping the temperature at 660 ℃ and Al with high reflectivityxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.1 and the thickness is 50 nm;
s6: at a temperature of 600 ℃ in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xAn InP/GaInP quantum well, the thickness of the quantum well being 50 nm;
s7: at a temperature of 600 ℃ in AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.1 and the thickness is 50 nm;
s8: maintaining the temperature at 600 ℃ in AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5, growth period is 20 pairs, and carrier concentration is 1E17cm-3；
S9: maintaining the temperature at 500 ℃ in the presence of P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer; the thickness of the GaAs window layer is 0.1 μm, and the carrier concentration is 1E19cm-3。
S10: and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
In this embodiment, the substrate thickness is 250 μm.
Example 2:
s1: preparing a GaAs substrate;
s2: reducing the temperature to 700 ℃, and growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 350nm, and the carrier concentration is 3E17cm-3；
S3: keeping the temperature at 680 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.3, growth period is 25 pairs, and carrier concentration is 3E18 cm-3；
S4: maintaining the temperature at 680 ℃ in low-reflectivity AlxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.8, growth period is 30 pairs, and carrier concentration is 3E18 cm-3；
S5: maintaining the temperature at 680 deg.C at high reflectance AlxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.6 and the thickness is 500 nm;
s6: at a temperature of 650 ℃ in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xThe quantum well structure comprises InP/GaInP quantum wells, wherein the thickness of each quantum well is 300 nm;
s7: at a temperature of 660 ℃ in AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.5 and the thickness is 500 nm;
s8: maintaining the temperature at 650 ℃ in AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.7, growth period is 30 pairs, and carrier concentration is 4E18 cm-3；
S9: maintaining the temperature at 560 ℃ in the presence of P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer; the thickness of the GaAs window layer is 3 mu m, and the carrier concentration is 3E20 cm-3。
S10: and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
In this embodiment, the substrate thickness is 300 μm.
Example 3:
s1: preparing a GaAs substrate;
s2: reducing the temperature to 800 ℃, and growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 500nm, and the carrier concentration is 5E18 cm-3；
S3: keeping the temperature at 700 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5, growth period is 40 pairs, and carrier concentration is 5E18 cm-3；
S4: maintaining the temperature at 700 ℃ at low reflectance AlxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.99, growth period is 40 pairs, and carrier concentration is 5E18 cm-3；
S5: maintaining the temperature at 700 ℃ at high reflectance AlxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.8 and the thickness is 1000 nm;
s6: at a temperature of 700 ℃ in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xThe quantum well structure comprises InP/GaInP quantum wells, wherein the thickness of each quantum well is 500 nm;
s7: at a temperature of 700 ℃ in AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.8 and the thickness is 1000 nm;
s8: maintaining the temperature at 700 ℃ in AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.99, growth period is 40 pairs, and carrier concentration is 5E18 cm-3；
S9: maintaining the temperature at 600 ℃ in the presence of P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer; the thickness of the GaAs window layer is 5 mu m, and the carrier concentration is 5E20 cm-3；
S10: and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
In this embodiment, the substrate thickness is 375 μm.
Example 4:
s1: preparing a GaAs substrate;
s2: reducing the temperature to 650 ℃, and growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 300nm, and the carrier concentration is 3E17cm-3；
S3: keeping the temperature at 650 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.1, growth period is 10 pairs, and carrier concentration is 1E17cm-3；
S4: the temperature is kept at 650-700 ℃ and the Al with low reflectivityxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5, growth period is 20 pairs, and carrier concentration is 1E17cm-3；
S5: keeping the temperature at 660 ℃ and Al with high reflectivityxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.1 and the thickness is 150 nm;
s6: at a temperature of 600 ℃ in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xAn InP/GaInP quantum well, the thickness of the quantum well being 50 nm;
s7: at a temperature of 600 ℃ in AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.1 and the thickness is 150 nm;
s8: maintaining the temperature at 600 ℃ in AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5, growth period is 20 pairs, and carrier concentration is 1E17cm-3；
S9: maintaining the temperature at 500 ℃ in the presence of P-type AlxGa1-xGaAs grown on surface of InP/AlInP DBR layerA window layer; the thickness of the GaAs window layer is 0.1 μm, and the carrier concentration is 1E19cm-3。
S10: and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
In this embodiment, the substrate thickness is 250 μm.
Example 5:
s1: preparing a GaAs substrate;
s2: reducing the temperature to 700 ℃, and growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 360nm, and the carrier concentration is 2E18 cm-3；
S3: keeping the temperature at 680 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.4, growth period is 36 pairs, and carrier concentration is 3E18 cm-3；
S4: keeping the temperature at 675 deg.C and Al with low reflectivityxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.7, growth period is 35 pairs, and carrier concentration is 4E18 cm-3；
S5: keeping the temperature at 685 ℃ at high-reflectivity AlxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.5 and the thickness is 350 nm;
s6: at a temperature of 640 ℃ in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xThe quantum well structure comprises InP/GaInP quantum wells, wherein the thickness of each quantum well is 360 nm;
s7: at a temperature of 660 ℃ in AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.6 and the thickness is 400 nm;
s8: maintaining the temperature at 650 ℃ in AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.85, growth period is 36 pairs, and carrier concentration is 4E18 cm-3；
S9: maintaining the temperature at 580 deg.C in P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer; the thickness of the GaAs window layer is 3.5 mu m, and the carrier concentration is 5E19 cm-3。
S10: and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
In this embodiment, the substrate thickness is 325 μm.
Example 6:
s1: preparing a GaAs substrate;
s2: reducing the temperature to 750 ℃, and growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 400nm, and the carrier concentration is 1E18cm-3；
S3: keeping the temperature at 700 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5, growth period is 40 pairs, and carrier concentration is 5E18 cm-3；
S4: maintaining the temperature at 700 ℃ at low reflectance AlxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.99, growth period is 40 pairs, and carrier concentration is 5E18 cm-3；
S5: maintaining the temperature at 700 ℃ at high reflectance AlxGa1-xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.8 and the thickness is 500 nm;
s6: at a temperature of 700 ℃ in AlxGa1-xInP lower waveguide layer surface growth AlxGa1-xThe quantum well structure comprises InP/GaInP quantum wells, wherein the thickness of each quantum well is 500 nm;
s7: at a temperature of 700 ℃ in AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.8 and the thickness is 500 nm;
s8: maintaining the temperature at 700 ℃ in AlxGa1-xInP upper waveguide layer surfaceGrowing P-type AlxGa1-xInP/AlInP DBR layer, wherein x is 0.99, growth period is 40 pairs, and carrier concentration is 5E18 cm-3；
S9: maintaining the temperature at 600 ℃ in the presence of P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer; the thickness of the GaAs window layer is 5 mu m, and the carrier concentration is 5E20 cm-3。
S10: and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
In this embodiment, the substrate thickness is 375 μm.
And (4) conclusion: embodiments 1 to 6 are implemented on the basis of the technical scheme of the invention, and a laser sample is prepared; the laser samples prepared in examples 1 to 6 and the conventional laser samples on the market were taken for detection, and after detection, the following results were found:
the power attenuation of the lasers prepared by the conventional process was greater than 50% after each laser was operated for 500 hours, while the output power of the laser samples prepared by examples 1-6 was relatively stable with little attenuation.
According to the statement, the process is reasonable in design and simple to operate, the problems that the original laser material is easy to oxidize and the reliability of the laser is poor are effectively solved, the overall performance of the prepared laser is improved by 15% -30%, the reliability is high, and the practicability is high.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (9)
1. A650 nm vertical cavity surface laser is characterized in that: the laser comprises a GaAs substrate, wherein a GaAs buffer layer, an N-type DBR layer and an Al layer are sequentially grown on the surface of the GaAs substrate from bottom to topxGa1-xInP lower waveguide layer, quantum well and AlxGa1-xAn InP upper waveguide layer, a P-type DBR layer and a GaAs window layer.
2. The 650nm vertical cavity surface laser as claimed in claim 1, wherein: the N-type DBR layer comprises low-reflectivity Al from bottom to topxGa1-xInP/AlInP DBR layer, high-reflectivity AlxGa1-xInP/AlInP DBR layer, the low-reflectivity AlxGa1-xInP/AlInP DBR layer is grown on the GaAs buffer layer, and Al isxGa1-xHigh reflectivity Al of InP lower waveguide layerxGa1-xAnd growing the InP/AlInP DBR layer.
3. The 650nm vertical cavity surface laser as claimed in claim 1, wherein: the P-type DBR layer is P-type AlxGa1-xInP/AlInP DBR layer.
4. A method for preparing a 650nm vertical cavity surface laser is characterized by comprising the following steps: the method comprises the following steps:
1) preparing a GaAs substrate;
2) growing a GaAs buffer layer on the GaAs substrate;
3) growing an N-type DBR layer on the GaAs buffer layer;
a) low reflectance AlxGa1-xGrowing an InP/AlInP DBR layer;
b) high-reflectivity AlxGa1-xGrowing an InP/AlInP DBR layer;
4) growing Al on N-type DBR layerxGa1-xAn InP lower waveguide layer;
5) in AlxGa1-xGrowing a quantum well on the InP lower waveguide layer;
6) growing Al on quantum wellsxGa1-xInP upper waveguideA layer;
7) in AlxGa1-xGrowing a P-type DBR layer on the InP upper waveguide layer;
8) growing a GaAs window layer on the P-type DBR layer;
9) packaging to obtain the final product.
5. The method according to claim 4, wherein the method comprises: the method comprises the following steps:
1) preparing a GaAs substrate;
2) growing a GaAs buffer layer on the surface of the GaAs substrate: reducing the temperature to 600-800 ℃, growing a GaAs buffer layer on the surface of the GaAs substrate, wherein the thickness of the GaAs buffer layer is 200-500nm, and the carrier concentration is 1E17cm-3-5E18cm-3；
3) Growing an N-type DBR layer on the GaAs buffer layer:
a) low reflectance AlxGa1-xAnd (3) growing an InP/AlInP DBR layer: keeping the temperature at 650-700 ℃, growing low-reflectivity Al on the GaAs buffer layerxGa1-xInP/AlInP DBR layer, wherein x is 0.1-0.5, growth period is 10-40 pairs, and carrier concentration is 1E17cm-3-5E18cm-3；
b) High-reflectivity AlxGa1-xAnd (3) growing an InP/AlInP DBR layer: the temperature is kept at 650-700 ℃ and the Al with low reflectivityxGa1-xGrowing high-reflectivity Al on InP/AlInP DBR layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5-0.99, growth period is 20-40 pairs, and carrier concentration is 1E17cm-3-5E18cm-3；
4) Growing Al on N-type DBR layerxGa1-xAn InP lower waveguide layer: the temperature is kept at 660 ℃ and 700 ℃, and Al with high reflectivityxGa1- xGrowing Al on InP/AlInP DBR layerxGa1-xAn InP lower waveguide layer, wherein x is 0.1-0.8, and the thickness is 50-1000 nm;
5) in AlxGa1-xGrowing Al on InP lower waveguide layerxGa1-xInP/GaInP quantum well: at a temperature of 600 ℃ and 700 ℃, in the presence of AlxGa1-xInP lower waveguide layerSurface growth of AlxGa1-xInP/GaInP quantum well;
6) in AlxGa1-xGrowing Al on InP/GaInP quantum wellxGa1-xAn InP upper waveguide layer: at a temperature of 600 ℃ and 700 ℃, in the presence of AlxGa1-xInP/GaInP quantum well surface growth AlxGa1-xAn InP upper waveguide layer, wherein x is 0.1-0.8, and the thickness is 50-1000 nm;
7) in AlxGa1-xGrowing P-type Al on InP upper waveguide layerxGa1-xInP/AlInP DBR layer: the temperature is maintained at 600 ℃ and 700 ℃ in the presence of AlxGa1-xGrowing P-type Al on the surface of InP upper waveguide layerxGa1-xInP/AlInP DBR layer, wherein x is 0.5-0.99, growth period is 20-40 pairs, and carrier concentration is 1E17cm-3-5E18cm-3；
8) In P type AlxGa1-xGrowing a GaAs window layer on the InP/AlInP DBR layer: the temperature is kept at 500 ℃ and 600 ℃ in the presence of P-type AlxGa1-xGrowing a GaAs window layer on the surface of the InP/AlInP DBR layer;
9) and after the epitaxial material grows, manufacturing a P-face electrode on the surface of the GaAs window layer, thinning, manufacturing an N-face electrode, cutting and packaging to obtain the finished laser.
6. The method according to claim 5, wherein the step of manufacturing the 650nm vertical cavity surface laser comprises: in the step 2), the growth temperature of the GaAs buffer layer is 650-750 ℃, the thickness of the GaAs buffer layer is 300-400nm, and the carrier concentration is 3E17cm-3-1E18cm-3。
7. The method according to claim 5, wherein the step of manufacturing the 650nm vertical cavity surface laser comprises: in the step 4), AlxGa1-xThe thickness of the InP upper waveguide layer is 150-500 nm; in the step 6), AlxGa1-xThe thickness of the InP lower waveguide layer is 150-500 nm.
8. The system of claim 5 for a 650nm vertical cavity surface laserThe preparation method is characterized by comprising the following steps: the thickness of the GaAs window layer is 0.1-5 μm, and the carrier concentration is 1E19cm-3-5E20cm-3。
9. The method according to claim 5, wherein the step of manufacturing the 650nm vertical cavity surface laser comprises: the thickness of the substrate is 250-375 mu m, and the thickness of the quantum well is 50-500 nm.
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