CN112578647A - Cleaning solution suitable for removing positive and negative photoresists - Google Patents
Cleaning solution suitable for removing positive and negative photoresists Download PDFInfo
- Publication number
- CN112578647A CN112578647A CN201910938660.7A CN201910938660A CN112578647A CN 112578647 A CN112578647 A CN 112578647A CN 201910938660 A CN201910938660 A CN 201910938660A CN 112578647 A CN112578647 A CN 112578647A
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- China
- Prior art keywords
- cleaning solution
- set forth
- hydrazine
- mass
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- Pending
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- 238000004140 cleaning Methods 0.000 title claims abstract description 70
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 50
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000002904 solvent Substances 0.000 claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000077 silane Inorganic materials 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- -1 alcohol amine Chemical class 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract 3
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 10
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 150000001412 amines Chemical group 0.000 claims description 4
- 150000002429 hydrazines Chemical class 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 4
- WFJRIDQGVSJLLH-UHFFFAOYSA-N methyl n-aminocarbamate Chemical compound COC(=O)NN WFJRIDQGVSJLLH-UHFFFAOYSA-N 0.000 claims description 4
- 229960004063 propylene glycol Drugs 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- 150000003462 sulfoxides Chemical class 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 2
- 229940083957 1,2-butanediol Drugs 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- VTRRCXRVEQTTOE-UHFFFAOYSA-N 1-methylsulfinylethane Chemical compound CCS(C)=O VTRRCXRVEQTTOE-UHFFFAOYSA-N 0.000 claims description 2
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- GBHCABUWWQUMAJ-UHFFFAOYSA-N 2-hydrazinoethanol Chemical compound NNCCO GBHCABUWWQUMAJ-UHFFFAOYSA-N 0.000 claims description 2
- XSXYESVZDBAKKT-UHFFFAOYSA-N 2-hydroxybenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1O XSXYESVZDBAKKT-UHFFFAOYSA-N 0.000 claims description 2
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 2
- OFLXLNCGODUUOT-UHFFFAOYSA-N acetohydrazide Chemical compound C\C(O)=N\N OFLXLNCGODUUOT-UHFFFAOYSA-N 0.000 claims description 2
- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical compound NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- VJRITMATACIYAF-UHFFFAOYSA-N benzenesulfonohydrazide Chemical compound NNS(=O)(=O)C1=CC=CC=C1 VJRITMATACIYAF-UHFFFAOYSA-N 0.000 claims description 2
- WARCRYXKINZHGQ-UHFFFAOYSA-N benzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1 WARCRYXKINZHGQ-UHFFFAOYSA-N 0.000 claims description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 2
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 claims description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 claims description 2
- FCCCRBDJBTVFSJ-UHFFFAOYSA-N butanehydrazide Chemical compound CCCC(=O)NN FCCCRBDJBTVFSJ-UHFFFAOYSA-N 0.000 claims description 2
- OWIUPIRUAQMTTK-UHFFFAOYSA-N carbazic acid Chemical compound NNC(O)=O OWIUPIRUAQMTTK-UHFFFAOYSA-N 0.000 claims description 2
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 claims description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 claims description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 2
- VYSYZMNJHYOXGN-UHFFFAOYSA-N ethyl n-aminocarbamate Chemical compound CCOC(=O)NN VYSYZMNJHYOXGN-UHFFFAOYSA-N 0.000 claims description 2
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 claims description 2
- 229940093476 ethylene glycol Drugs 0.000 claims description 2
- XZBIXDPGRMLSTC-UHFFFAOYSA-N formohydrazide Chemical compound NNC=O XZBIXDPGRMLSTC-UHFFFAOYSA-N 0.000 claims description 2
- 229960005150 glycerol Drugs 0.000 claims description 2
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 125000000400 lauroyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 2
- DKACXUFSLUYRFU-UHFFFAOYSA-N tert-butyl n-aminocarbamate Chemical compound CC(C)(C)OC(=O)NN DKACXUFSLUYRFU-UHFFFAOYSA-N 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- NKLYMYLJOXIVFB-UHFFFAOYSA-N triethoxymethylsilane Chemical compound CCOC([SiH3])(OCC)OCC NKLYMYLJOXIVFB-UHFFFAOYSA-N 0.000 claims description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 claims description 2
- TUQLLQQWSNWKCF-UHFFFAOYSA-N trimethoxymethylsilane Chemical compound COC([SiH3])(OC)OC TUQLLQQWSNWKCF-UHFFFAOYSA-N 0.000 claims description 2
- CFQPVBJOKYSPKG-UHFFFAOYSA-N 1,3-dimethylimidazol-2-one Chemical group CN1C=CN(C)C1=O CFQPVBJOKYSPKG-UHFFFAOYSA-N 0.000 claims 1
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 27
- 230000007797 corrosion Effects 0.000 abstract description 27
- 229910052751 metal Inorganic materials 0.000 abstract description 21
- 239000002184 metal Substances 0.000 abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052802 copper Inorganic materials 0.000 abstract description 13
- 239000010949 copper Substances 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000005764 inhibitory process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000002195 synergetic effect Effects 0.000 description 3
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 2
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a cleaning solution for removing photoresist residues, which contains quaternary ammonium hydroxide, alcohol amine, alcohol solvent, silane, hydrazine and derivatives thereof, water and the balance of organic solvent. The cleaning solution can effectively remove the photoresist residues on the wafer, has no corrosion to the base materials such as metal aluminum, copper and the like, and has good application prospect in the fields of semiconductor chip cleaning and the like.
Description
Technical Field
The invention relates to the technical field of cleaning liquid, in particular to a cleaning liquid for removing photoresist residues.
Background
In a semiconductor manufacturing process, a mask of a photoresist is formed on a surface of some material, pattern transfer is performed after exposure, and after a desired pattern is obtained, the remaining photoresist needs to be stripped off before a next process is performed. It is desirable in this process to completely remove the unwanted photoresist without etching any of the substrate.
Currently, a photoresist cleaning solution mainly consists of a polar organic solvent, a strong base, and/or water, etc., and removes photoresist on a semiconductor wafer by immersing the semiconductor wafer in the cleaning solution or washing the semiconductor wafer with the cleaning solution.
JP1998239865 discloses a cleaning liquid of an aqueous system consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), 1, 3' -dimethyl-2-imidazolidinone (DMI) and water. Immersing the wafer in the cleaning solution, and removing the photoresist with the thickness of more than 20 microns on the metal and dielectric substrate at the temperature of 50-100 ℃; it has a slightly higher corrosion to the semiconductor wafer substrate, and cannot completely remove the photoresist on the semiconductor wafer, and the cleaning capability is insufficient.
US5529887 discloses an alkaline cleaning solution comprising potassium hydroxide (KOH), an alkyl glycol monoalkyl ether, a water-soluble fluoride, and water, immersing a wafer in the cleaning solution, and removing a photoresist on a metal and dielectric substrate at 40 to 90 ℃. Which is highly corrosive to semiconductor wafer substrates.
US5480585 discloses a cleaning solution containing a non-aqueous system, which comprises ethanolamine, sulfolane or dimethyl sulfoxide and catechol, can remove photoresist on metal and dielectric substrates at 40-120 ℃, and has no corrosion to metal.
US2005119142 discloses a non-aqueous cleaning solution containing an alkoxy group-containing polymer, dipropylene glycol alkyl ether, N-methylpyrrolidone and methyl isobutyl ketone. The cleaning solution can be simultaneously suitable for cleaning the positive photoresist and the negative photoresist.
With the rapid development of semiconductors, particularly the development of the field of bump packaging, the requirement for cleaning photoresist residues is also correspondingly improved; primarily the number of pins (I/O) per unit area is increasing, and photoresist removal is becoming more and more difficult.
Therefore, the search for effective cleaning solution capable of removing both positive photoresist and negative photoresist is a priority direction for the development of the photoresist cleaning solution. In order to adapt to new situations, a cleaning solution with strong positive and negative photoresist removing capability and low metal corrosion rate must be developed.
Disclosure of Invention
The invention aims to provide a cleaning solution capable of effectively removing photoresist residues. The cleaning solution effectively removes photoresist residues on the wafer, and the synergistic effect of the alcohol solvent, the hydrazine and the derivatives thereof is beneficial to removing the positive photoresist of the wafer, and meanwhile, the cleaning solution has good corrosion inhibition effect on metal aluminum and copper, and has good application prospect in the fields of semiconductor chip cleaning and the like.
The novel cleaning solution contains: (a) quaternary amine hydroxide (b), alcohol amine (c), alcohol solvent (d), silane (e), hydrazine and its derivative (f), water (g), and the rest is organic solvent.
i. 0.1-6% of quaternary amine hydroxide;
0.1-50 wt%, more preferably 5-40 wt% of an alcohol amine;
0.1-25 wt% of an alcoholic solvent; more preferably, 3 to 20 wt%;
silane 0.1 to 8 wt%, more preferably 0.5 to 5 wt%;
0.05 to 5 wt%, more preferably 0.1 to 3 wt%, of hydrazine and derivatives thereof;
vi, deionized water 0.1-10 wt%, more preferably, 0.5-6 wt%;
the balance being organic solvent.
In the present invention, the quaternary amine hydroxide is one or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, hexadecyltrimethylammonium hydroxide and benzyltrimethylammonium hydroxide.
In the present invention, the alcohol amine is monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N-diethylethanolamine, N- (2-aminoethyl) ethanolamine and diglycolamine. Monoethanolamine, triethanolamine and mixtures thereof are preferred.
In the present invention, the alcohol solvent is one or more selected from benzyl alcohol, ethylene glycol, propylene glycol, glycerin, 1, 2-propylene glycol, tetrahydrofurfuryl alcohol, cyclohexanol, dipropylene glycol, diethylene glycol, 1, 2-butanediol, 3-methoxybutanol, 1-phenoxy-2-propanol, and 1, 3-butanediol.
In the present invention, the silane is one or more of tetramethoxysilane, tetraethoxysilane, trimethoxymethylsilane, trimethoxyethylsilane, trimethoxypropylsilane, dimethoxydimethylsilane, dimethoxydiethylsilane, triethoxymethylsilane and (3-aminopropyl) triethoxysilane.
In the invention, the hydrazine and the hydrazine derivative are selected from one or more of hydrazine, 2-hydroxyethyl hydrazine, benzoyl hydrazine, salicyloyl hydrazine, acetyl hydrazine, benzenesulfonyl hydrazine, carbohydrazide, methyl carbazate, lauroyl hydrazide, tert-butyl carbazate, ethyl carbazate, carbazic acid, methyl carbazate, carbazyl dithioformate, formylhydrazine, adipic dihydrazide and butyryl hydrazine.
In the invention, the organic solvent is one or more of sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolidinone, amide and alcohol ether. And preferably, the sulfoxide is one or more of dimethyl sulfoxide and methylethyl sulfoxide; the sulfone is one or more of methyl sulfone and sulfolane; the imidazolidinone is one or more of 2-imidazolidinone and 1, 3-dimethyl-2-imidazolidinone; the pyrrolidone is one or more of N-methyl pyrrolidone and N-cyclohexyl pyrrolidone; the imidazolidinone is 1, 3-dimethyl-2-imidazolidinone; the amide is one or more of dimethylformamide and dimethylacetamide;
the cleaning solution of the present invention can clean the photoresist residue on the wafer at 25 ℃ to 80 ℃. The specific method comprises the following steps: and soaking the wafer containing the photoresist residues in the cleaning solution at 25-80 ℃ for a proper time, taking out, rinsing and drying by using high-purity nitrogen.
The positive progress effects of the invention are as follows:
1) the cleaning solution provided by the invention can effectively remove the photoresist residues on the wafer, and meanwhile, the cleaning solution has no corrosion to the base materials such as metal aluminum, copper and the like.
2) The alcohol solvent, the hydrazine and the derivatives thereof have synergistic effect, so that the removal capacity of the positive photoresist can be enhanced; meanwhile, the addition of hydrazine and derivatives thereof can protect the metal copper and basically has no corrosion to the metal copper;
3) the cleaning solution disclosed by the invention has very good water resistance, solves the problem that the corrosion is increased due to the absorption of water in the cleaning operation of the traditional cleaning solution, and has a good application prospect in the fields of semiconductor wafer cleaning and the like.
The reagents and starting materials used in the present invention are commercially available. The cleaning fluid of the invention can be prepared by simply and uniformly mixing the components.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
The reagents and starting materials used in the present invention are commercially available. The cleaning fluid can be prepared by simply and uniformly mixing the components.
Cleaning solution is prepared according to the components and the proportion thereof of each example in the table 1, and is uniformly mixed until the mass percent reaches 100%.
TABLE 1 compositions and amounts of cleaning solutions of the examples
TABLE 2 Components and amounts of comparative example cleaning solutions
Effects of the embodiment
In order to further examine the cleaning condition of the cleaning liquid, the invention adopts the following technical means: the wafer micro-sphere implantation process is characterized in that after the convex spheres are electroplated, the wafer containing photoresist residues is respectively immersed into cleaning solution, oscillated for 30-120 minutes at 25-80 ℃ by using a constant temperature oscillator at a vibration frequency of about 60 rpm, rinsed and dried by using high-purity nitrogen. The cleaning effect of the photoresist residue and the etching of the wafer by the cleaning solution are shown in table 3.
Table 3: wafer cleaning aspects of some embodiments
Wherein the symbols for each corrosion case in Table 3 represent the meanings shown in Table 4.
TABLE 4 symbolic meanings of the respective corrosion cases
| Corrosion conditions: | and (3) photoresist removal condition: |
| excellent basically no corrosion; | very good removal; |
| slightly corroded; | small residue; |
| corrosion in the delta medium; | more residue is observed; |
| x severe corrosion. | X a large amount of residue |
As can be seen from Table 3, the cleaning solution of the present invention has a good cleaning effect on the wafer containing photoresist residues after the convex balls have been electroplated in the wafer microsphere implantation process, and also has a good inhibition effect on corrosion of aluminum and copper, and a wide range of use temperatures.
As can be seen from comparative example 4-1 and example 4: the alcohol solvent is not added, the amount of the alcohol solvent which is not added is completely added to the solvent, and under the conditions that other components are the same and the operation conditions are the same, the addition of the alcohol solvent is verified to be beneficial to removing the wafer positive photoresist, although the two components do not have obvious difference on the corrosion of metal aluminum and copper, the removal effect of the positive photoresist of the comparative example 4-1 is not good as that of the example 4;
comparison of comparative example 4-2 with example 4: the silane is not added, the amount of the silane which is not added is completely supplemented to the solvent, and under the conditions that other components are the same and the operation conditions are the same, the silane is added to facilitate the removal of the negative photoresist and the inhibition of the corrosion of the metal aluminum of the wafer, although the two effects of the corrosion of the metal copper and the corrosion of the positive photoresist are not obviously different, the negative photoresist and the corrosion of the metal aluminum in the comparative example 4-2 are not as good as those in the example 4;
comparison of comparative examples 4-3 and example 4: hydrazine and derivatives thereof are not added, the amounts of the hydrazine and the derivatives thereof which are not added are all added on the solvent, and under the conditions that other components are the same and the operation conditions are the same, the addition of the hydrazine and the derivatives thereof is beneficial to the removal of the wafer positive photoresist and the inhibition of the metal copper corrosion, although the two effects of the removal of the metal aluminum corrosion and the negative photoresist are not obviously different, the comparative examples 4-3 have no better inhibition of the removal of the positive photoresist and the metal copper corrosion than the example 4;
comparison of comparative examples 4-4 and example 4: hydrazine and derivatives thereof are not added, the amount of the hydrazine and the derivatives thereof which are not added is completely supplemented to the alcohol solvent, and under the conditions that other components are the same and the operation conditions are the same, the hydrazine and the derivatives thereof are added, so that the removal of the wafer positive photoresist and the inhibition of the metal copper corrosion are facilitated, and the removal of the wafer negative photoresist and the inhibition of the metal aluminum corrosion are not influenced; comparison of comparative examples 4-5 with example 4: the alcohol solvent is not added, the non-added amount is completely added to the hydrazine and the derivatives thereof, and under the same other components and the same operation conditions, the addition of the alcohol solvent is proved to be beneficial to the removal of the wafer positive photoresist, and the removal of the negative photoresist and the corrosion inhibition of metal aluminum and copper are not influenced. Comparative examples 4-4 and 4-5 also demonstrate that the synergistic effect of the alcohol solvent and hydrazine and its derivatives is beneficial to the removal of wafer positive photoresist.
Comparative examples 15-1, 15-2, 15-3, 15-4, 15-54 in comparison to example 15 show that: the same rules are shown in comparative examples 4-1, 4-2, 4-3, 4-4, 4-5 and example 4.
In conclusion, the positive progress effects of the invention are as follows: the cleaning solution can effectively remove the photoresist residues under the same conditions; meanwhile, the method has no corrosion to base materials such as metal aluminum, copper and the like, can be applied to removal of wafer positive photoresist and removal of wafer negative photoresist, and has good application prospect in the fields of semiconductor chip cleaning and the like.
It should be understood that wt% in the present invention refers to mass percentage.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (19)
1. A cleaning solution for removing photoresist residues is characterized by comprising quaternary ammonium hydroxide, alcohol amine, alcohol solvent, silane, hydrazine and derivatives thereof, water and organic solvent.
2. The cleaning solution as set forth in claim 1, wherein: the quaternary ammonium hydroxide is one or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, hexadecyltrimethylammonium hydroxide and benzyltrimethylammonium hydroxide.
3. The cleaning solution as set forth in claim 1, wherein: the content of the quaternary amine hydroxide is 0.1-6% by mass.
4. The cleaning solution as set forth in claim 1, wherein: the alcohol amine is monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N-diethylethanolamine, N- (2-aminoethyl) ethanolamine and diglycolamine. Monoethanolamine, triethanolamine and mixtures thereof are preferred.
5. The cleaning solution as set forth in claim 1, wherein: the content of the alcohol amine is 0.1-50% by mass percent.
6. The cleaning solution as set forth in claim 5, wherein: the content of the alcohol amine is 5-40% by mass.
7. The cleaning solution as set forth in claim 1, wherein: the alcohol solvent is one or more selected from benzyl alcohol, ethylene glycol, propylene glycol, glycerol, 1, 2-propylene glycol, tetrahydrofurfuryl alcohol, cyclohexanol, dipropylene glycol, diethylene glycol, 1, 2-butanediol, 3-methoxybutanol, 1-phenoxy-2-propanol and 1, 3-butanediol.
8. The cleaning solution as set forth in claim 1, wherein: the content of the alcohol solvent is 0.1-25% by mass.
9. The cleaning solution as set forth in claim 8, wherein: the content of the alcohol solvent is 0.1-25% by mass.
10. The cleaning solution as set forth in claim 1, wherein: the silane is one or more selected from tetramethoxysilane, tetraethoxysilane, trimethoxymethylsilane, trimethoxyethylsilane, trimethoxypropylsilane, dimethoxydimethylsilane, dimethoxydiethylsilane, triethoxymethylsilane and (3-aminopropyl) triethoxysilane.
11. The cleaning solution as set forth in claim 1, wherein: the content of the silane is 0.1-8% by mass.
12. The cleaning solution as set forth in claim 11, wherein: the content of the silane is 0.5-5% by mass.
13. The cleaning solution as set forth in claim 1, wherein: the hydrazine and the hydrazine derivative are selected from one or more of hydrazine, 2-hydroxyethyl hydrazine, benzoyl hydrazine, salicyloyl hydrazine, acetyl hydrazine, benzenesulfonyl hydrazine, carbohydrazide, methyl carbazate, lauroyl hydrazide, tert-butyl carbazate, ethyl carbazate, carbazic acid, methyl carbazate, formylhydrazine, adipic dihydrazide and butyryl hydrazine.
14. The cleaning solution as set forth in claim 1, wherein: the content of hydrazine and hydrazine derivatives is 0.05-5% by mass.
15. The cleaning solution as set forth in claim 14, wherein: the content of hydrazine and hydrazine derivatives is 0.1-3% by mass.
16. The cleaning solution as set forth in claim 1, wherein: the content of the deionized water is 0.1-10% by mass.
17. The cleaning solution as set forth in claim 16, wherein: the content of the deionized water is 0.5-6% by mass.
18. The cleaning solution as set forth in claim 1, wherein: the organic solvent is one or more of sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolidinone, amide and alcohol ether.
19. The cleaning solution as set forth in claim 18, wherein: the sulfoxide is one or more of dimethyl sulfoxide and methyl ethyl sulfoxide; the sulfone is one or more of methyl sulfone and sulfolane; the imidazolidinone is one or more of 2-imidazolidinone and 1, 3-dimethyl-2-imidazolidinone; the pyrrolidone is one or more of N-methyl pyrrolidone and N-cyclohexyl pyrrolidone; the imidazolone is 1, 3-dimethyl-2-imidazolone; the amide is one or more of dimethylformamide and dimethylacetamide.
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| JP2002296804A (en) * | 2001-03-30 | 2002-10-09 | Nippon Zeon Co Ltd | Resist stripper and method for stripping resist using the same |
| CN101371199A (en) * | 2005-08-13 | 2009-02-18 | 韩国泰科诺赛美材料株式会社 | Photoresist stripper composition for semiconductor manufacturing |
| CN104238287A (en) * | 2013-06-20 | 2014-12-24 | 安集微电子科技(上海)有限公司 | Cleaning solution for removing photoresist residues |
| US20160252819A1 (en) * | 2013-11-18 | 2016-09-01 | Fujifilm Corporation | Modified-resist stripper, method for stripping modified resist using same, and method for manufacturing semiconductor-substrate product |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002296804A (en) * | 2001-03-30 | 2002-10-09 | Nippon Zeon Co Ltd | Resist stripper and method for stripping resist using the same |
| CN101371199A (en) * | 2005-08-13 | 2009-02-18 | 韩国泰科诺赛美材料株式会社 | Photoresist stripper composition for semiconductor manufacturing |
| CN104238287A (en) * | 2013-06-20 | 2014-12-24 | 安集微电子科技(上海)有限公司 | Cleaning solution for removing photoresist residues |
| US20160252819A1 (en) * | 2013-11-18 | 2016-09-01 | Fujifilm Corporation | Modified-resist stripper, method for stripping modified resist using same, and method for manufacturing semiconductor-substrate product |
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