CN112564658B - Film bulk acoustic resonator and preparation method thereof - Google Patents
Film bulk acoustic resonator and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to the technical field of film bulk acoustic wave resonators, in particular to a film bulk acoustic wave resonator and a preparation method thereof. According to the invention, the thin film bulk acoustic resonator is arranged on the insulating layer, so that the high resistance characteristic requirement of a device on the substrate layer is reduced, the electrical insulation characteristic of the thin film bulk acoustic resonator is improved, and the radio frequency signal loss is reduced; according to the invention, air gaps exist among the cantilever beam structure, the suspended beam structure, the high-low span beam structure and the piezoelectric layer on the second electrode, so that acoustic signals generated by the film body can be effectively reflected back, and attenuation of the acoustic signals is reduced; in addition, the first temperature compensation layer and the second temperature compensation layer with the compressive stress characteristic are respectively arranged on one side of the first electrode and one side of the second electrode, so that distortion of the piezoelectric film caused by stress in temperature difference change is balanced, and temperature compensation is performed, so that the frequency stability of the film bulk acoustic wave resonator is improved, and the reliability of the film bulk acoustic wave resonator in different application scenes is improved.
Description
Technical Field
The invention relates to the technical field of film bulk acoustic wave resonators, in particular to a film bulk acoustic wave resonator and a preparation method thereof.
Background
A thin film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR), which is a piezoelectric acoustic passive device, is now being used in the communication and sensing fields. Electromagnetic wave filtering in the communication field, receiving and transmitting electromagnetic wave signals with specific frequency; in the field of sensing and measurement and control, the sensor is more widely used for energy collection: acceleration and inertia detection, temperature detection, ultraviolet detection, and the like.
The film bulk acoustic resonator is generally manufactured on a semiconductor (such as silicon/silicon carbide/gallium nitride) substrate capable of industrial production, and mainly comprises an acoustic wave reflecting structure, a metal lower electrode, a piezoelectric film, a metal upper electrode and an outgoing electric connection wire which is interconnected with the outside. A periodic alternating electric field is applied to two ends of the piezoelectric film, the piezoelectric film deforms to generate sound waves, standing wave resonance is generated at a specific frequency when the sound waves propagate in the longitudinal direction of the piezoelectric film, and the thickness of the piezoelectric film is half of the wavelength of the sound waves in the piezoelectric film. Thus, the piezoelectric film has the same electric resonance characteristic as a quartz crystal resonator, can be used for manufacturing electromagnetic wave resonators and filters, and is widely applied to the fields of communication and sensing.
The performance of a thin film bulk acoustic resonator determines the reliability of its application scenario (e.g., voltage class, environmental temperature difference, etc.), and its performance is mainly determined by its structural design and the characteristics of the preparation materials.
Therefore, how to improve the reliability of the thin film bulk acoustic resonator in different application scenarios is a technical problem to be solved at present.
Disclosure of Invention
The invention aims to provide a film bulk acoustic resonator and a preparation method thereof, so as to improve the reliability of the film bulk acoustic resonator in different application scenes.
In order to achieve the above object, the embodiments of the present invention provide the following solutions:
In a first aspect, an embodiment of the present invention provides a thin film bulk acoustic resonator, including: the device comprises a substrate layer, an insulating layer, a first temperature compensation layer, a first electrode, a piezoelectric layer, a second electrode and a second temperature compensation layer;
The substrate layer, the insulating layer, the first temperature compensation layer, the first electrode, the piezoelectric layer, the second electrode and the second temperature compensation layer are stacked along a first direction;
The second electrode comprises a plurality of side surfaces; wherein, at least one side comprises a cantilever beam structure, a suspended beam structure and a high-low span beam structure;
gaps are arranged among the cantilever beam structure, the suspended beam structure and the high-low span beam structure and the piezoelectric layer;
A concave area which is concave along the second direction is formed on the insulating layer; wherein the second direction is antiparallel to the first direction.
In a possible embodiment, the cantilever structure and the high-low span structure are respectively located at two sides of the piezoelectric layer; the suspended beam structure is positioned between the cantilever beam structure and the high-low span beam structure.
In a possible embodiment, the horizontal position of the recessed region is located in an overlapping region of the piezoelectric layer and the first electrode in a third direction; wherein the third direction is perpendicular to the first direction.
In a possible embodiment, the first temperature compensation layer includes a first sub-layer and a second sub-layer stacked along the first direction;
the second temperature compensation layer comprises a third sub-layer and a fourth sub-layer which are stacked along the first direction;
The constituent material of the first sub-layer, the constituent material of the second sub-layer, the constituent material of the third sub-layer, and the constituent material of the fourth sub-layer each include one or more of silicon dioxide, silicon oxynitride, and silicon nitride.
In one possible embodiment, the thickness of the first temperature compensation layer ranges from 50 nm to 600 nm; the thickness of the second temperature compensation layer ranges from 50 nanometers to 500 nanometers.
In one possible embodiment, the constituent material of the first electrode includes one or more of molybdenum metal material, platinum metal material, ruthenium metal material, gold metal material, silver metal material, and copper metal material;
The constituent material of the second electrode includes one or more of molybdenum metal material, platinum metal material, ruthenium metal material, gold metal material, silver metal material, and copper metal material.
In one possible embodiment, the thickness range of the first electrode and the thickness range of the second electrode are each 20nm to 800 nm.
In one possible embodiment, the constituent materials of the piezoelectric layer include an aluminum nitride material, an aluminum scandium nitride material, a zinc oxide material, a lithium niobate crystal material, or a lead zirconate titanate material.
In a second aspect, an embodiment of the present invention provides a method for preparing a thin film bulk acoustic resonator according to any one of the first aspect, where the method includes:
Manufacturing an insulating layer on the substrate layer;
Manufacturing a cavity on the insulating layer through an etching process;
Filling a first sacrificial layer in the cavity;
Manufacturing a first temperature compensation layer on the insulating layer;
disposing and patterning a first electrode on the first temperature compensation layer;
disposing and patterning a piezoelectric layer on the first electrode;
disposing a second sacrificial layer on the piezoelectric layer;
etching the second sacrificial layer into a liner structure through an etching process; the pad structure comprises a cantilever Liang Daomo structure, a suspended Liang Daomo structure and a high-low span beam reverse mould structure;
Disposing and imaging a second electrode on the pad structure;
Providing a second temperature compensation layer on the second electrode;
patterning the second temperature compensation layer and the second electrode through an etching process to manufacture a contact window structure and a cantilever structure of the second electrode;
And releasing the first sacrificial layer and the liner structure to form an air gap between the cantilever beam structure, the suspended beam structure and the high-low span beam structure of the second electrode and the piezoelectric layer.
In one possible embodiment, the releasing the first sacrificial layer and the liner structure comprises:
If the composition material of the first sacrificial layer and the composition material of the liner structure are amorphous silicon materials or polycrystalline silicon materials, releasing the first sacrificial layer and the liner structure by adopting gaseous xenon fluoride;
And if the composition material of the first sacrificial layer and the composition material of the liner structure are silicon dioxide materials or phosphorus-doped silicon dioxide materials, releasing the first sacrificial layer and the liner structure by adopting gaseous hydrogen fluoride.
Compared with the prior art, the invention has the following advantages and beneficial effects:
The thin film bulk acoustic resonator is arranged on the insulating layer, so that the high resistance characteristic requirement of the device on the substrate layer is reduced, and the electrical insulation characteristic of the thin film bulk acoustic resonator is improved; according to the invention, air gaps exist among the cantilever beam structure, the suspended beam structure, the high-low span beam structure and the piezoelectric layer on the second electrode, so that acoustic signals generated by the film body can be effectively reflected back, and the radio frequency signal loss is reduced; in addition, the first temperature compensation layer and the second temperature compensation layer with the compressive stress characteristic are respectively arranged on one side of the first electrode and one side of the second electrode, so that distortion of the piezoelectric film caused by stress in temperature difference change is balanced, and temperature compensation is performed, so that the frequency stability of the film bulk acoustic wave resonator is improved, and the reliability of the film bulk acoustic wave resonator in different application scenes is improved.
Drawings
In order to more clearly illustrate the embodiments of the present description or the technical solutions in the prior art, the drawings that are required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present description, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 2 is a flowchart of a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
Fig. 3 is a schematic process diagram of step 1 in a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 4 is a schematic process diagram of step 2 in a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 5 is a schematic process diagram of step 3 in a method for manufacturing a film bulk acoustic resonator according to an embodiment of the present invention;
fig. 6 is a schematic process diagram of step 4 in a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 7 is a schematic process diagram of step 5 in a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 8 is a schematic process diagram of step 6 in a method for manufacturing a film bulk acoustic resonator according to an embodiment of the present invention;
Fig. 9 is a schematic structural diagram of a patterned piezoelectric layer in step6 in the method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 10 is a schematic process diagram of step 7 in a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 11 is a schematic process diagram of step 8 in a method for fabricating a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 12 is a schematic process diagram of step 9 in a method for manufacturing a film bulk acoustic resonator according to an embodiment of the present invention;
fig. 13 is a schematic process diagram of step 10 in a method for manufacturing a film bulk acoustic resonator according to an embodiment of the present invention;
Fig. 14 is a schematic process diagram of step 11 in a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention.
Reference numerals illustrate:
1 is a substrate layer, 2 is an insulating layer, 21 is a cavity, 31 is a first temperature compensation layer, 32 is a second temperature compensation layer, 4 is a first electrode, 5 is a piezoelectric layer, 6 is a second electrode, 61 is a cantilever beam structure, 62 is a suspended beam structure, 63 is a high-low span beam structure, 7 is a first sacrificial layer, 8 is a second sacrificial layer, 81 is a contact window structure, 82 is a suspended Liang Daomo structure, 83 is a high-low span beam reverse mold structure, and 84 is a cantilever Liang Daomo structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by those skilled in the art based on the embodiments of the present invention are within the scope of protection of the embodiments of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of the structure, which specifically includes: the substrate layer 1, the insulating layer 2, the first temperature compensation layer 31, the first electrode 4, the piezoelectric layer 5, the second electrode 6, and the second temperature compensation layer 32.
The substrate layer 1, the insulating layer 2, the first temperature compensation layer 31, the first electrode 4, the piezoelectric layer 5, the second electrode 6, and the second temperature compensation layer 32 are stacked in a first direction, which may be a bottom-up direction.
Specifically, the substrate layer 1 is typically a semiconductor substrate such as a silicon substrate, a silicon carbide substrate, or a gallium nitride substrate. However, in this embodiment, the thin film bulk acoustic resonator structure is not directly grown on the substrate layer 1, so that the high resistance requirement of the thin film bulk acoustic resonator on the substrate layer 1 is reduced, and the overall cost is reduced.
Specifically, the insulating layer 2 is an insulating film, and a silicon oxide material, a silicon oxynitride material, or a silicon nitride material may be used, and of course, a mixed material of one or more of these three materials may be used. The preferred thickness of the insulating layer 2 may be in the range of 3 micrometers to 8 micrometers.
Specifically, the first electrode 4 is a lower electrode of the film bulk acoustic resonator, the second electrode 6 is an upper electrode of the film bulk acoustic resonator, and the composition materials of the upper electrode and the lower electrode can be molybdenum metal (Mo) material, platinum metal (Pt) material, ruthenium metal (Ru) material, gold metal (Au) material, silver metal (Ag) material or copper metal (Cu) material, or can be alloy materials composed of one or more of these metal materials.
Specifically, the piezoelectric layer 5 may be made of a piezoelectric material having piezoelectric properties, such as an aluminum nitride (AlN) material, an aluminum scandium nitride (AlScN) material, a zinc oxide (ZnO) material, a lithium niobate crystal (LiNbO 3) material, or a lead zirconate titanate (Pb (Zr 1-XTiX)O3) material, or the like.
Specifically, the constituent materials of the first temperature compensation layer 31 and the second temperature compensation layer 32 may be silicon dioxide material, silicon oxynitride material or silicon nitride material, and a mixture of one or more of these materials may be used. The preferred thickness of the first temperature compensation layer 31 is 50 nm to 600 nm, and the preferred thickness of the second temperature compensation layer 32 is 50 nm to 500nm, and the specific thickness selection should be preferably obtained through the simulation of the thermodynamic mechanical properties of the thin film bulk acoustic resonator.
The first temperature compensation layer 31 includes a first sub-layer and a second sub-layer stacked in a first direction; the second temperature compensation layer 32 includes a third sub-layer and a fourth sub-layer stacked in the first direction; the constituent material of the first sub-layer, the constituent material of the second sub-layer, the constituent material of the third sub-layer, and the constituent material of the fourth sub-layer each include one or more of silicon dioxide, silicon oxynitride, and silicon nitride.
Because the thermal expansion coefficients of the piezoelectric layer 5 and other film layers of the film bulk acoustic resonator are different, the film bulk acoustic resonator generates stress deformation at different temperatures, and the resonance frequency of the resonator shifts due to the deformation. The first temperature compensation layer 31 and the second temperature compensation layer 32 in the embodiment have the characteristics of compressive stress, can balance the distortion of the piezoelectric film caused by stress in the temperature difference change, can inhibit the deformation of the piezoelectric film under the influence of temperature, and can realize the temperature compensation of the piezoelectric film without affecting the resonance quality characteristics of the piezoelectric film.
The insulating layer 2 is provided with a concave area which is concave along the second direction to form a cavity 21 structure; the second direction is antiparallel to the first direction, and may be a top-down direction. The recessed region can provide a vibration space for the acoustic vibration of the piezoelectric layer 5, avoiding affecting the piezoelectric performance of the piezoelectric layer 5.
The second electrode 6 comprises several sides; at least one of the sides includes a cantilever beam structure 61, a suspended beam structure 62, and a high-low span beam structure 63. Gaps are arranged between the cantilever beam structure 61, the suspended beam structure 62 and the high-low span beam structure 63 and the piezoelectric layer 5.
Specifically, the cantilever structure 61 includes a cantilever and a support, where the support is a portion where one end of the first electrode is tightly attached to the upper surface of the piezoelectric layer, and one end of the cantilever is fixedly connected to the upper end of the support. In this way, the upper surface of the piezoelectric layer below the cantilever is directly exposed to air.
Specifically, the suspended beam structure 62 includes a beam structure and two side struts, where the two side struts are adjacent portions of the middle portion of the first electrode that are tightly attached to the upper surface of the piezoelectric layer, and the beam structure is directly fixedly connected to the two side struts. In this way, the beam structure, the two side struts and the upper surface of the piezoelectric layer form an air gap.
Specifically, the "height" in the high-low span structure 63 means that the bottoms of the support structures on both sides of the span are not located on the same horizontal plane, and there is a relative height deviation. Thus, the bridge, the support structures on both sides and the upper surface of the piezoelectric layer form an L-shaped air gap.
When an acoustic wave is incident from one medium to another medium with different acoustic impedances, reflection and/or transmission occur at the interface between the two mediums, the reflectivity and the transmissivity are related to the difference of the acoustic impedances of the two mediums, and the reflection angle and the transmission angle are related to the incident angle. The reflection of the high-frequency sound wave of more than 2 ten thousand hertz is particularly related to the acoustic impedances of two media for transmitting sound waves, if the acoustic impedances of the two media are the same, the transmission phenomenon is completely generated, if the acoustic impedance ratio between the first medium and the second medium is between 1 time and 20 times, the reflection phenomenon and the transmission phenomenon are simultaneously generated, and if the acoustic impedance ratio between the first medium and the second medium is more than 20 times, the total reflection phenomenon is generated.
In this embodiment, the cantilever beam structure 61, the suspended beam structure 62 and the high-low span beam structure 63 are disposed on the second electrode 6, so that the piezoelectric resonant structure (the stacked structure formed by the piezoelectric layer 5 and the upper and lower electrodes) is partially exposed to air or vacuum in the up-down direction and the left-right direction, and the piezoelectric layer 5, the first electrode 4 and the second electrode 6 are all solid media, and the acoustic impedance is relatively large with respect to air or vacuum, so that the sound wave generated by the vibration from the piezoelectric layer 5 is totally reflected around the piezoelectric resonant structure, and the outward loss of the sound wave signal is reduced, thereby being beneficial to more accurately forming mechanical resonance in the piezoelectric resonant structure.
Specifically, the cantilever beam structure 61 and the high-low span beam structure 63 are respectively located at two sides of the piezoelectric layer 5; the suspended beam structure 62 is located between the cantilever beam structure 61 and the high and low span beam structure 63. The horizontal position of the depressed region is located in the overlapping region of the piezoelectric layer 5 and the first electrode 4 in the third direction; the third direction is perpendicular to the first direction, and may be a left-to-right direction or a right-to-left direction.
The working principle of the embodiment is as follows:
When a certain voltage is applied to the first electrode 4 and the second electrode 6, the piezoelectric layer 5 generates mechanical deformation due to the inverse piezoelectric effect, the piezoelectric layer 5 can excite an acoustic vibration signal due to the existence of a concave area below the piezoelectric layer 5 and reflect back and forth between two electrode planes, and due to gaps between the cantilever beam structure 61, the suspended beam structure 62 and the high-low span beam structure 63 of the second electrode 6 and the piezoelectric layer 5, the acoustic wave can be totally reflected when being transmitted to the structures, the outward loss of the acoustic wave signal is reduced, so that the acoustic wave signal forms accurate mechanical resonance between the piezoelectric layer 5 and the upper electrode and the lower electrode, and the specific fundamental frequency wavelength of the resonance is related to the thickness of the piezoelectric layer 5.
Based on the same inventive concept as the method, the embodiment of the present invention further provides a method for preparing a thin film bulk acoustic resonator as described above, and as shown in fig. 2, the method specifically includes steps 1 to 12.
And step 1, manufacturing an insulating layer 2 on the substrate layer 1.
Specifically, as shown in fig. 3, a chemical vapor deposition (Chemical Vapor Deposition, PECVD) is performed on the substrate layer 1 to prepare the insulating layer 2, and then a chemical mechanical Polishing (CHEMICAL MECHANICAL Polishing, CMP) is performed on the upper surface of the insulating layer 2.
And 2, manufacturing a cavity 21 on the insulating layer 2 through an etching process.
Specifically, as shown in fig. 4, a cavity 21 is etched on the insulating layer 2, the bottom of the cavity 21 must be above the substrate layer 1, the bottom of the cavity 21 must not penetrate the insulating layer 2, and the depth of the cavity 21 in the vertical direction, which is determined by the design of the specific resonator, can be set to 1 to 5 micrometers.
And 3, filling the first sacrificial layer 7 in the cavity 21.
Specifically, as shown in fig. 5, a thin film of the first sacrificial layer 7 is grown on the insulating layer 2, and the first sacrificial layer 7 needs to have a certain thickness, not be too thin, at least fill the cavity 21 on the insulating layer 2 and overflow, i.e. the lowest position of the upper surface of the first sacrificial layer 7 on the semiconductor substrate should be higher than the level of the opening of the cavity 21. The preparation method of the first sacrificial layer 7 has a relatively large selection range, and can be selected from various methods such as chemical vapor deposition, physical vapor deposition (Physical Vapor Deposition, PVD) and the like, so long as the design requirement is met. The first sacrificial layer 7 is prepared using a process of low pressure chemical Vapor Deposition (Low Pressure Chemical Vapor Deposition, LPCVD) or plasma enhanced chemical Vapor Deposition (PLASMA ENHANCED CHEMICAL Vapor Deposition, PECVD).
Thereafter, the excess material on the upper surface of the first sacrificial layer 7 is removed by a chemical mechanical polishing process, so that the opening of the cavity 21 is exposed in the horizontal direction. The chemical mechanical polishing process requires extremely fine polishing at the opening of the cavity 21, so that the upper surface of the first sacrificial layer 7 and the upper surface of the insulating layer 2 exposed at the opening of the cavity 21 reach the highest flatness achieved by the process, and a flat and smooth substrate foundation is laid for the subsequent process.
And 4, manufacturing a first temperature compensation layer 31 on the insulating layer 2.
Specifically, as shown in fig. 6, which is a schematic process diagram of this step, deposition of the first temperature compensation layer 31 is continued, and chemical mechanical polishing is performed. The first temperature compensation layer 31 growth process is preferably ion-enhanced chemical vapor deposition and chemical mechanical polishing after the end of film growth requires a fine polishing to the highest process level to achieve the highest flatness in preparation for the next fabrication of the first electrode 4 of the resonator.
Step 5, disposing and patterning the first electrode 4 on the first temperature compensation layer 31.
Specifically, as shown in fig. 7, which is a schematic process diagram of this step, the first electrode 4 is generally prepared by using magnetron Sputtering (Sputtering) to deposit an AlN film as a lattice-matching layer or a mechanical support layer of the metal electrode, and then using magnetron Sputtering to deposit a metal film, such as a metal electrode of molybdenum (Mo), platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), copper (Cu), or the like, including, but not limited to, one or more combinations of these metal materials. The thickness of the mechanical support layer is preferably between 20 and 800 nm and the thickness of the metal electrode is preferably between 200 and 1200 nm. It should be noted that the mechanical support layer of the metal electrode and the metal electrode need to be prepared into a quasi-single crystal with preferential orientation or an approximate single crystal with columnar texture, and the preparation of the crystalline piezoelectric layer 5 provides a strict lattice structure foundation; meanwhile, the upper surface of the first electrode 4 is subjected to flattening finishing (trimming) to achieve an in-chip surface relief of at least 5 nm or even less than 1 nm of the upper surface of the bottom electrode film (metal film). Such high surface uniformity requires a very high flatness of the underlying layer of the thin film deposition, requires a severe control of the thickness uniformity and surface flatness of the thin film by the AlN mechanical support layer and the metal bottom electrode thin film preparation process, and requires good performance by the planarization finishing process. A typical planarization process employs an argon plasma surface modification process.
Then, spin coating, exposure, development and reactive plasma etching are performed on the mechanical support layer and the metal bottom electrode film, which grow good crystal characteristics and surface leveling characteristics, to form the first electrode 4 pattern.
And 6, disposing and patterning the piezoelectric layer 5 on the first electrode 4.
Specifically, as shown in fig. 8, a process schematic diagram of this step is shown, and the piezoelectric layer 5 film may be made of a piezoelectric material such as AlN, alScN, znO, liNbO 3,Pb(Zr1-XTiX)O3 film. The preparation of c-axis oriented AlN, or scandium (Sc) -doped AlN, alScN is the core process of a thin film bulk acoustic resonator. The incorporation of rare earth elements such as scandium (Sc) or yttrium (Y) improves the elasticity and resonance characteristics of the AlN piezoelectric layer 5.
It should be noted here that the piezoelectric layer 5 should be quasi-monocrystalline in preferential orientation, or approximately monocrystalline in columnar texture, or be the highest level of monocrystalline crystal produced. Meanwhile, the upper surface of the piezoelectric layer 5 film must be flattened and trimmed to achieve an in-plane surface relief of at least less than 5 nm, and even less than 1 nm, of the upper surface of the piezoelectric layer 5 film. The piezoelectric layer 5 with extremely high surface flatness has the most critical improvement on the resonance characteristics of the thin film bulk acoustic resonator.
After spin coating, exposure, development and reactive plasma etching are performed on the piezoelectric layer 5 film with good crystal characteristics and surface leveling characteristics, a pattern of the piezoelectric layer 5 is formed, and as shown in fig. 9, a schematic structure of the piezoelectric layer 5 after patterning in this step is shown.
And 7, disposing a second sacrificial layer 8 on the piezoelectric layer 5.
Specifically, as shown in fig. 10, the thickness of the second sacrificial layer 8 is 500-3000 nm, and the preparation method is chemical vapor deposition and physical vapor deposition. Prepared using a low pressure chemical vapor deposition or a plasma enhanced chemical vapor deposition process.
And step 8, etching the second sacrificial layer 8 into a liner structure through an etching process.
The process schematic of this step is shown in fig. 11, where the pad structure includes a suspended Liang Daomo structure 82 and a high-low span beam reverse structure 83.
Specifically, after photoresist evening, exposure, development and reactive plasma etching are performed on the prepared second sacrificial layer 8, a liner structure is formed, where the liner structure includes a cantilever Liang Daomo structure 84, a suspended Liang Daomo structure 82 and a high-low bridge reverse structure 83.
And step 9, disposing and imaging the second electrode 6 on the pad structure.
Specifically, as shown in fig. 12, the process of the second electrode 6 is similar to that of the first electrode 4, and will not be described herein.
In step 10, a second temperature compensation layer 32 is provided on the second electrode 6.
Specifically, as shown in fig. 13, the process of forming the second temperature compensation layer 32 is similar to that of the first temperature compensation layer 31, and will not be described herein.
Step 11, performing patterning processing on the second temperature compensation layer 32 and the second electrode 6 by an etching process, so as to manufacture a contact window structure 81 and a cantilever structure 61 of the second electrode 6.
Specifically, as shown in fig. 14, the process schematic diagram of this step is shown, and processes such as spin coating, exposure, development, and reactive plasma etching are used in combination to pattern the second temperature compensation layer 32 and the metal film of the second electrode 6, so as to form a contact window structure 81 for interconnecting the second electrode 6 on the right side of the device with the outside, and form separation of the metal film of the first electrode 4 and the second electrode 6 on the left side of the device, and form an exposed head on the left end portion of the left side of the dielectric layer 5 on the left side of the device, so as to form a cantilever structure 61 of the second electrode 6.
Step 12, releasing the first sacrificial layer 7 and the pad structure, forming an air gap between the cantilever structure 61, the suspended beam structure 62 and the high-low bridge structure 63 of the second electrode 6 and the piezoelectric layer 5.
Specifically, if the constituent material of the first sacrificial layer 7 and the constituent material of the liner structure are amorphous silicon material or polysilicon material, gaseous xenon fluoride is used to release the first sacrificial layer 7 and the liner structure; if the constituent material of the first sacrificial layer 7 and the constituent material of the liner structure are a silicon dioxide material or a phosphorus doped silicon dioxide material, gaseous hydrogen fluoride is used to release the first sacrificial layer 7 and the liner structure.
Specifically, after the second temperature compensation layer 32 is grown, the load layer (Mass Loading) and the Passivation layer (Passivation) are continuously grown. The support layer is typically selected from the same metal material as the second electrode 6 and the passivation layer is typically selected from an AlN ceramic material.
Then, the necessary process steps are performed to ensure that windows for interconnection between the first electrode 4 and the second electrode 6 and the outside are opened, and ensure separation between the first electrode 4 and the second electrode 6, and the design and manufacture of the load layer and the passivation layer are not related to this embodiment, which is not described herein.
The technical scheme provided by the embodiment of the invention has at least the following technical effects or advantages:
According to the embodiment of the invention, the thin film bulk acoustic resonator is arranged on the insulating layer, so that the high resistance characteristic requirement of the device on the substrate layer is reduced, and the electrical insulation characteristic of the thin film bulk acoustic resonator is improved; according to the embodiment of the invention, the cantilever beam structure, the suspended beam structure, the high-low span beam structure and the piezoelectric layer on the second electrode are provided with air gaps, so that acoustic signals generated by the film body can be effectively reflected back, and the radio frequency signal loss is reduced; in addition, the first temperature compensation layer and the second temperature compensation layer with the compressive stress characteristic are respectively arranged on one side of the first electrode and one side of the second electrode, so that distortion of the piezoelectric film caused by stress in temperature difference change is balanced, temperature compensation is performed, the frequency stability of the film bulk acoustic resonator is improved, and the reliability of the film bulk acoustic resonator in different application scenes is improved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. A thin film bulk acoustic resonator, comprising: the device comprises a substrate layer, an insulating layer, a first temperature compensation layer, a first electrode, a piezoelectric layer, a second electrode and a second temperature compensation layer;
The substrate layer, the insulating layer, the first temperature compensation layer, the first electrode, the piezoelectric layer, the second electrode and the second temperature compensation layer are stacked along a first direction;
The second electrode comprises a plurality of side surfaces; wherein, at least one side comprises a cantilever beam structure, a suspended beam structure and a high-low span beam structure;
gaps are arranged among the cantilever beam structure, the suspended beam structure and the high-low span beam structure and the piezoelectric layer;
A concave area which is concave along the second direction is formed on the insulating layer; wherein the second direction is antiparallel to the first direction;
the first temperature compensation layer comprises a first sub-layer and a second sub-layer which are stacked along the first direction;
the second temperature compensation layer comprises a third sub-layer and a fourth sub-layer which are stacked along the first direction;
The constituent material of the first sub-layer, the constituent material of the second sub-layer, the constituent material of the third sub-layer, and the constituent material of the fourth sub-layer each include one or more of silicon dioxide, silicon oxynitride, and silicon nitride.
2. The thin film bulk acoustic resonator of claim 1, wherein the cantilever structure and the high-low span structure are located on either side of the piezoelectric layer; the suspended beam structure is positioned between the cantilever beam structure and the high-low span beam structure.
3. The thin film bulk acoustic resonator according to claim 1, characterized in that the horizontal position of the recessed region is located in an overlapping region of the piezoelectric layer and the first electrode in a third direction; wherein the third direction is perpendicular to the first direction.
4. The thin film bulk acoustic resonator of claim 1, wherein the thickness of the first temperature compensation layer ranges from 50nm to 600 nm; the thickness of the second temperature compensation layer ranges from 50 nanometers to 500 nanometers.
5. The thin film bulk acoustic resonator according to claim 1, characterized in that the constituent material of the first electrode comprises one or more of molybdenum metal material, platinum metal material, ruthenium metal material, gold metal material, silver metal material and copper metal material;
The constituent material of the second electrode includes one or more of molybdenum metal material, platinum metal material, ruthenium metal material, gold metal material, silver metal material, and copper metal material.
6. The thin film bulk acoustic resonator of claim 5, wherein the range of thickness values for the first electrode and the range of thickness values for the second electrode are each 20 nm to 800 nm.
7. The thin film bulk acoustic resonator according to claim 1, characterized in that the constituent material of the piezoelectric layer comprises an aluminum nitride material, an aluminum scandium nitride material, a zinc oxide material, a lithium niobate crystal material or a lead zirconate titanate material.
8. A method of manufacturing a thin film bulk acoustic resonator as claimed in any one of claims 1 to 7, the method comprising:
Manufacturing an insulating layer on the substrate layer;
Manufacturing a cavity on the insulating layer through an etching process;
Filling a first sacrificial layer in the cavity;
Manufacturing a first temperature compensation layer on the insulating layer;
disposing and patterning a first electrode on the first temperature compensation layer;
disposing and patterning a piezoelectric layer on the first electrode;
disposing a second sacrificial layer on the piezoelectric layer;
etching the second sacrificial layer into a liner structure through an etching process; the pad structure comprises a cantilever Liang Daomo structure, a suspended Liang Daomo structure and a high-low span beam reverse mould structure;
Disposing and imaging a second electrode on the pad structure;
Providing a second temperature compensation layer on the second electrode;
patterning the second temperature compensation layer and the second electrode through an etching process to manufacture a contact window structure and a cantilever structure of the second electrode;
And releasing the first sacrificial layer and the liner structure to form an air gap between the cantilever beam structure, the suspended beam structure and the high-low span beam structure of the second electrode and the piezoelectric layer.
9. The method of manufacturing a thin film bulk acoustic resonator according to claim 8, wherein said releasing said first sacrificial layer and said liner structure comprises:
If the composition material of the first sacrificial layer and the composition material of the liner structure are amorphous silicon materials or polycrystalline silicon materials, releasing the first sacrificial layer and the liner structure by adopting gaseous xenon fluoride;
And if the composition material of the first sacrificial layer and the composition material of the liner structure are silicon dioxide materials or phosphorus-doped silicon dioxide materials, releasing the first sacrificial layer and the liner structure by adopting gaseous hydrogen fluoride.
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