CN112542769A - Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof - Google Patents
Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof Download PDFInfo
- Publication number
- CN112542769A CN112542769A CN202011468660.4A CN202011468660A CN112542769A CN 112542769 A CN112542769 A CN 112542769A CN 202011468660 A CN202011468660 A CN 202011468660A CN 112542769 A CN112542769 A CN 112542769A
- Authority
- CN
- China
- Prior art keywords
- quantum well
- layer
- well active
- active layer
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a broad-spectrum multi-wavelength Fabry-Perot laser, wherein a first quantum well active layer and a second quantum well active layer are in the same layer in a butt-joint growing mode, and current injection isolation of two sections of quantum wells is realized in a mode of corroding partial contact layers. Aiming at the problems of narrow spectral width and few wavelength channels of a single quantum well structured FP laser, the gain bandwidth of the FP laser is increased by adopting a mode of butt-joint growth of two quantum wells with different band gaps, and the output of a large-spectral-width multi-wavelength channel is realized, so that the performance degradation of a multi-quantum well material caused by rapid annealing can be avoided compared with the mode of quantum well mixing in the background technology; and the butt joint end face adopts the inclined end face design, so that the reflectivity of the butt joint end face is reduced.
Description
The invention is a divisional application of an invention patent application with the application number of 202011123349.6 (mother case) and the name of 'a broad spectrum multi-wavelength Fabry-Perot laser', which is submitted at 10/20/2020.
Technical Field
The invention belongs to the field of photoelectronic devices, and particularly relates to a broad-spectrum multi-wavelength Fabry-Perot (FP) laser.
Background
Dense Wavelength Division Multiplexing (DWDM) technology can realize transmission of different wavelength channels in the same optical fiber, greatly improves the transmission capacity of an optical fiber transmission system, and has great practical value. As the number of wavelength channels in DWDM systems continues to increase, the number of individual laser diodes that need to be employed increases, and the cost and complexity of the transmitter also increases. To solve these problems, some alternative technologies to obtain multi-wavelength operation from a single laser source have been studied, and FP lasers have become an important light source choice in DWDM systems due to their simple structure, low manufacturing cost, and multi-wavelength longitudinal mode output.
However, the conventional FP laser adopts a single quantum well structure, and the gain bandwidth is limited, so that the laser has a narrow spectral width and a small number of wavelength channels, and cannot meet the requirements of more and more wavelength channels. A common way to increase the number of wavelength channels is to use a plurality of FP laser chip integrated arrays as light sources, which increases the device manufacturing and control costs and power consumption; in another scheme, the gain bandwidth and the wavelength channel number of the FP laser are extended by changing a quantum well gain spectrum, and a more common scheme is to adopt an asymmetric quantum well structure, and to grow quantum wells with different thicknesses or components in an epitaxial growth direction, and to strictly control the thicknesses and components of different quantum wells when growing the quantum wells.
Patent US6628686B1 discloses an integrated multi-wavelength broad spectrum laser, which realizes quantum well intermixing by means of ion implantation and thermal diffusion of impurities after a quantum well layer grows, and because quantum well intermixing can make the band gap of a quantum well material blue shift, different regions of the laser quantum well have different band gap structures, thereby realizing the broadening of gain bandwidth. However, the quantum well intermixing method requires rapid thermal annealing, which causes defects and ions to diffuse, reduces the performance of the quantum well, and has poor process repeatability.
Patent CN107658693A discloses a monolithic integrated chaotic laser chip based on random grating feedback, which includes: a substrate; a lower confinement layer fabricated on the substrate; an active layer formed on the lower confinement layer; an upper confinement layer formed on the active layer; a waveguide layer in strip shape and longitudinally manufactured in the middle of the upper surface of the upper limiting layer; a P + electrode layer divided into two sections by isolation trench and formed on the waveguide layer; an N + electrode layer formed on the back surface of the lower confinement layer; the P + electrode layers divided into two sections respectively correspond to the DFB laser area and the random feedback area; the DFB laser area provides output light and feedback light for the whole chip, and a distributed feedback Bragg grating layer is manufactured on the corresponding upper limiting layer part; the random feedback area carries out random multi-feedback on light emitted by the DFB laser area, the active layer part corresponding to the random feedback area is provided with a random feedback grating layer, the random grating feedback structure thoroughly eliminates the time delay characteristic of a single-cavity optical feedback chaotic laser, reduces the weak periodicity of the single-cavity optical feedback chaotic laser and improves the randomness of the single-cavity optical feedback chaotic laser, the single-chip integrated structure has the advantages of light weight, small volume, strong integration, stable output and the like, the distributed feedback Bragg grating layer is arranged on the upper limiting layer, the random feedback grating layer is arranged on the active layer, and the distributed feedback Bragg grating layer and the random feedback grating layer are structurally different from each other, so that the thickness size of the whole laser chip is increased.
Patent CN111064074A discloses a high-speed semiconductor laser, comprising: the DFB section and the passive cavity feedback section are both ridge waveguide structures, and an electrical isolation groove is etched between the two ridges; the DFB section is sequentially provided with a first substrate, a first lower buffer layer, a grating layer, a lower respective limiting layer, an active layer, an upper respective limiting layer, a first upper buffer layer, a first corrosion stopping layer, a first cladding and a first covering layer from bottom to top, and a first electrode is arranged on the first covering layer; the passive cavity feedback section is sequentially provided with a second substrate, a second lower buffer layer, a waveguide core layer, a second upper buffer layer, a second corrosion stopping layer, a second cladding layer and a second covering layer from bottom to top, a second electrode is arranged on the second covering layer, the thickness difference of the waveguide core layer and the DFB section active layer is large in the structure of the passive cavity feedback section, the used materials and the doping types are also greatly different, and the manufacturing process of the DFB laser is too complex.
Disclosure of Invention
Aiming at least one limitation and defect of the existing scheme, the invention aims to provide a broad-spectrum multi-wavelength Fabry-Perot (FP) laser, which not only solves the problem of small gain bandwidth and few output wavelength channels, but also can effectively control the thickness and size of the whole laser chip by butt-growing two quantum well layers with different band gaps in the active region of the laser quantum well, has simple structure, stable manufacturing process and low cost, and is beneficial to improving the performance of the quantum well.
The invention provides a large-spectral-width multi-wavelength FP laser which is characterized by comprising the following components:
a first quantum well active layer; and
the second quantum well active layer and the first quantum well active layer grow on the same layer in a butt joint growth mode, and secondary epitaxial growth is carried out on the same layer;
wherein the material of the first quantum well active layer and the second quantum well active layer is In1-x-yAlxGayAs, wherein the value range of x is 0.2-0.5, the value range of y is 0.48-0.75, and the value of x and y corresponding to the first quantum well active layer is different from the value of x and y corresponding to the second quantum well active layer;
or the material of the first quantum well active layer and the second quantum well active layer is GaaIn1-aAsbP1-bThe value range of a is 0.15-0.3, the value range of b is 0.48-0.8, and the value of a and b corresponding to the first quantum well active layer is different from the value of a and b corresponding to the second quantum well active layer;
wherein a difference in gain peak wavelengths of the first and second quantum well active layers is a predetermined range.
Further, the broad spectrum multi-wavelength FP laser is characterized by further comprising:
the lower waveguide layer, the lower buffer layer and the substrate are sequentially arranged below the first quantum well active layer and the second quantum well active layer;
the upper waveguide layer, the upper buffer layer, the corrosion stop layer and the upper cover layer are sequentially arranged on the first quantum well active layer and the second quantum well active layer;
the first contact layer and the second contact layer are positioned on the same layer and are respectively arranged on the left side and the right side of the upper covering layer; and
the first electrode and the second electrode are respectively arranged on the first contact layer and the second contact layer.
Further, the material band gaps of the lower waveguide layer and the upper waveguide layer are larger than the material band gaps of the first quantum well active layer and the second quantum well active layer.
Further, the first quantum well active layer and the second quantum well active layer both adopt InGaAlAs or InGaAsP multi-quantum well structures, and the predetermined range is 8-20 nm.
Furthermore, the lower waveguide layer and the upper waveguide layer are the same in material composition and structure, and the refractive indexes of the lower waveguide layer and the upper waveguide layer are smaller than those of the first quantum well active layer and the second quantum well active layer.
Furthermore, the butt joint end faces of the first quantum well active layer and the second quantum well active layer are in butt joint by adopting inclined end faces, and the inclination angle is larger than or equal to 10 degrees and smaller than or equal to 20 degrees.
Further, the first contact layer and the second contact layer are electrically implanted and isolated by etching a predetermined length of the contact layer.
Furthermore, the end face of the active layer of the first quantum well is plated with a high-reflection film, the reflectivity of the end face is greater than or equal to 30% and less than or equal to 80%, the end face of the active layer of the second quantum well is plated with a high-transmission film, and the reflectivity of the end face of the active layer of the second quantum well is greater than or equal to 10% and less than or equal to 50%.
Further, the length of the first quantum well active layer is 100-500 μm, and the length of the second quantum well active layer is 100-500 μm.
Further, the predetermined length is 20-40 μm.
The invention provides a butt joint growth method of a first quantum well active layer and a second quantum well active layer of a broad-spectrum multi-wavelength FP laser, which comprises the following steps:
s1, respectively extending a lower buffer layer, a lower waveguide layer and a first quantum well active layer on the primary epitaxial wafer;
s2, depositing a dielectric film silicon nitride or silicon oxide with a first thickness of 250nm for example;
s3, performing mask photoetching to protect the region needing to be reserved;
s4, etching the area needing secondary epitaxy by RIE dry etching and non-selective etching methods, and etching away the first partial area of the first quantum well active layer;
s5, etching the area needing secondary epitaxy by using a selective wet etching method, and etching off the second partial area of the first quantum well active layer;
s6, carrying out high-temperature heat treatment in MOCVD;
s7, secondary epitaxy of the second quantum well active layer;
and S8, removing the mask, and continuing to epitaxially grow the upper waveguide layer, the upper buffer layer, the corrosion stop layer, the upper cover layer and the contact layer.
The invention has the beneficial effects that:
currents are respectively injected through the first electrode 12 and the second electrode 13, an amplified optical field resonates in a FP laser resonant cavity, and lasing is started after the amplified optical field reaches a threshold value or more to generate multi-wavelength laser output;
the laser provided by the invention adopts a butt-joint growth mode to grow the quantum well active region with two gain peak values, so that a wider gain spectrum bandwidth can be provided, and a wider FP longitudinal mode can obtain enough gain to realize lasing; the difference in the material composition of the first quantum well active layer and the second quantum well active layer can obtain different central lasing wavelengths, thereby providing a wider gain bandwidth.
The butt joint end faces grown by butt joint of the two quantum well active regions are in butt joint by adopting the inclined end faces, so that the butt joint end face reflection caused by the refractive index difference of the two quantum well active regions can be avoided, and the influence of the butt joint end face reflection on the longitudinal mode of the FP laser lasing is reduced;
by adjusting the magnitude of the injection current of the first electrode 12 and the second electrode 13, the total gain spectrum of the active region of the quantum well of the laser is wider and flatter, the multi-wavelength output of the FP laser is realized, and the output power of each wavelength channel is flat.
Drawings
FIG. 1 is a schematic structural cross-sectional view of a broad-spectrum multi-wavelength FP laser of the present invention;
FIG. 2 is a schematic diagram of the longitudinal cross-sectional structure of the broad-spectrum multi-wavelength FP laser of the present invention;
FIG. 3 is a schematic diagram of the structure of the light-emitting end face of the broad-spectrum multi-wavelength FP laser;
FIG. 4 is a schematic diagram of the structure of a quantum well active region grown by butt-joint of a broad-spectrum multi-wavelength FP laser;
FIG. 5 is a schematic diagram showing the superposition of gain spectra of two quantum wells grown by butt-joint of a broad-spectrum multi-wavelength FP laser according to the present invention;
in the figure: 1-substrate, 2-lower buffer layer, 3-lower waveguide layer, 4-first quantum well active layer, 5-upper waveguide layer, 6-upper buffer layer, 7-corrosion stop layer, 8-upper cover layer, 9-first contact layer, 10-second quantum well active layer, 11-second contact layer, 12-first electrode and 13-second electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to expand the gain spectrum width of the FP laser and increase the number of output wavelength channels without introducing possible negative effects, the invention provides a wide-spectrum multi-wavelength FP laser, which adopts a structure of butt-joint growth of two quantum well active regions, expands the gain spectrum width of the FP laser and increases the number of wavelength channels by optimally designing the gain peaks of the two quantum well active regions.
Preferably, the present invention provides a large-spectral-width multi-wavelength FP laser, characterized by comprising:
a first quantum well active layer; and
the second quantum well active layer and the first quantum well active layer grow on the same layer in a butt joint growth mode, and secondary epitaxial growth is carried out on the same layer;
wherein the material of the first quantum well active layer and the second quantum well active layer is In1-x-yAlxGayAs, wherein the value range of x is 0.2-0.5, the value range of y is 0.48-0.75, and the value of x and y corresponding to the first quantum well active layer is different from the value of x and y corresponding to the second quantum well active layer;
or the material of the first quantum well active layer and the second quantum well active layer is GaaIn1-aAsbP1-bThe value range of a is 0.15-0.3, the value range of b is 0.48-0.8, and the value of a and b corresponding to the first quantum well active layer is different from the value of a and b corresponding to the second quantum well active layer;
wherein a difference in gain peak wavelengths of the first and second quantum well active layers is a predetermined range.
Preferably, the material of the first quantum well active layer and the second quantum well active layer is In1-x-yAlxGayAs or GaaIn1-aAsbP1-bThe central lasing wavelength of the laser can be 1310-1550 nm. The value range of the component x of the InAlGaAs material of the first quantum well and the second quantum well is (0.2-0.5)]Y ranges from 0.6 to 0.75]. The value range of the GaInAsP material a of the first quantum well and the second quantum well is (0.15-0.3)]B ranges from 0.48 to 0.8]. The material compositions of the first and second quantum well active layers are different, and the difference in the gain peak wavelengths of the first and second quantum well active layers is a predetermined range.
Advantageously, on the basis of a first quantum well and a second quantum well which are made of the same material, different xy values or ab values are combined to realize the first quantum well and the second quantum well which are made of the same material and have different components, so that a certain wavelength difference exists between gain peaks of a first quantum well active layer and a second quantum well active layer.
Further, the broad spectrum multi-wavelength FP laser is characterized by further comprising:
the lower waveguide layer, the lower buffer layer and the substrate are sequentially arranged below the first quantum well active layer and the second quantum well active layer;
the upper waveguide layer, the upper buffer layer, the corrosion stop layer and the upper cover layer are sequentially arranged on the first quantum well active layer and the second quantum well active layer;
the first contact layer and the second contact layer are positioned on the same layer and are respectively arranged on the left side and the right side of the upper covering layer; and
the first electrode and the second electrode are respectively arranged on the first contact layer and the second contact layer.
Further, the material band gaps of the lower waveguide layer and the upper waveguide layer are larger than the material band gaps of the first quantum well active layer and the second quantum well active layer.
Further, the first quantum well active layer and the second quantum well active layer both adopt InGaAlAs or InGaAsP multi-quantum well structures, and the predetermined range is 8-20 nm.
Furthermore, the lower waveguide layer and the upper waveguide layer are the same in material composition and structure, and the refractive indexes of the lower waveguide layer and the upper waveguide layer are smaller than those of the first quantum well active layer and the second quantum well active layer.
Furthermore, the butt joint end faces of the first quantum well active layer and the second quantum well active layer are in butt joint through inclined end faces, the reflectivity and the transmissivity of the optical field in the resonant cavity at the butt joint end faces are related to the end face inclination angle, the larger the inclination angle is, the transmissivity and the reflectivity are reduced, the reflectivity is reduced faster, the reflectivity is reduced, the reflectivity of the butt joint end faces is reduced, meanwhile, the transmissivity is prevented from being reduced too much, and the inclination angle is set to be greater than or equal to 10 degrees and smaller than or equal to 20 degrees.
Further, the first contact layer and the second contact layer are electrically implanted and isolated by etching a predetermined length of the contact layer.
Furthermore, the end face of the active layer of the first quantum well is plated with a high-reflection film, the reflectivity of the end face is greater than or equal to 30% and less than or equal to 80%, the end face of the active layer of the second quantum well is plated with a high-transmission film, and the reflectivity of the end face of the active layer of the second quantum well is greater than or equal to 10% and less than or equal to 50%.
Further, the length of the first quantum well active layer is 100-500 μm, and the length of the second quantum well active layer is 100-500 μm.
Further, the predetermined length is 20-40 μm.
Preferably, the present invention further provides an FP laser capable of realizing a large gain spectral width and a multi-wavelength channel output, and fig. 1 is a schematic cross-sectional structure diagram of the FP laser in this embodiment. The laser structure includes from bottom to top in proper order: the quantum well structure comprises a substrate 1, a lower buffer layer 2, a lower waveguide layer 3, a first quantum well active layer 4, a second quantum well active layer 10, an upper waveguide layer 5, an upper buffer layer 6, an etch stop layer 7, an upper cladding layer 8, a first contact layer 9, a second contact layer 11, a first electrode 12 and a second electrode 13.
Preferably, the invention further provides a butt-joint growth method of a first quantum well active layer and a second quantum well active layer of the broad-spectrum multi-wavelength FP laser, which comprises the following steps:
s1, respectively extending a lower buffer layer, a lower waveguide layer and a first quantum well active layer on the primary epitaxial wafer;
s2, depositing a dielectric film silicon nitride or silicon oxide with a first thickness of 250nm for example;
s3, performing mask photoetching to protect the region needing to be reserved;
s4, etching the area needing secondary epitaxy by RIE dry etching and non-selective etching methods, and etching away the first partial area of the first quantum well active layer;
s5, etching the area needing secondary epitaxy by using a selective wet etching method, and etching off the second partial area of the first quantum well active layer;
s6, carrying out high-temperature heat treatment in MOCVD;
s7, secondary epitaxy of the second quantum well active layer;
and S8, removing the mask, and continuing to epitaxially grow the upper waveguide layer, the upper buffer layer, the corrosion stop layer, the upper cover layer and the contact layer.
In the embodiment of the invention, the first quantum well active layer 4 and the second quantum well active layer 10 are grown on the same layer in a butt-joint growth mode, during epitaxy, the first quantum well active layer 4 is epitaxially grown at first, then a mask is manufactured through photoetching to cover the area of the required first quantum well active layer 4, then other areas are removed by means of RIE dry etching, nonselective corrosion and selective wet corrosion, the second quantum well active layer 10 is epitaxially grown for the second time, the two quantum well active layers are grown on the same epitaxial layer, the butt-joint coupling efficiency of an optical field between the first quantum well active layer 4 and the second quantum well active layer 10 is improved, and after the two quantum wells are grown, the upper waveguide layer 5, the upper buffer layer 6, the corrosion stop layer 7 and the upper cover layer 8 are epitaxially grown.
The method for butt-joint growth of the first quantum well active layer and the second quantum well active layer of the broad-spectrum multi-wavelength FP laser has the advantages that: respectively extending a lower buffer layer, a lower waveguide layer and a first quantum well active layer on a primary epitaxial wafer, carrying out mask photoetching after depositing 250nm dielectric film silicon nitride or silicon oxide, protecting a region to be reserved by using a mask, then corroding the region to be subjected to secondary extension by using RIE (reactive ion etching) dry etching, non-selective corrosion and selective wet corrosion methods, corroding partial region of the first quantum well active layer, firstly adopting the non-selective wet corrosion to obtain better interface corrosion appearance, and then adopting the selective corrosion to accurately control the corrosion depth; then carrying out high-temperature heat treatment in MOCVD (metal organic chemical vapor deposition), so that a corrosion interface can be smooth, and then extending a second quantum well active layer for the second time; and after the mask is removed, continuing to extend the upper waveguide layer, the upper buffer layer, the corrosion stop layer, the upper cover layer and the contact layer.
Further, the first contact layer 9 and the second contact layer 11 are grown on the same layer, the first electrode 12 and the second electrode 13 are respectively covered on the first contact layer 9 and the second contact layer 11, the first contact layer 9 and the second contact layer 11 corrode a part of the InGaAs contact layer by using H2SO4/H2O2/H2O solution to realize electrode contact isolation, currents of the two electrodes are respectively injected, the length of the corroded part of the contact layer can be 20-40 μm, if the isolation region is too short, the injection currents of the two quantum well regions can affect each other due to current diffusion, and if the isolation region is too long, the light emitting efficiency of the laser can be affected.
Furthermore, the first quantum well active layer 4 and the second quantum well active layer 10 can both adopt a multiple quantum well structure made of InGaAlAs or InGaAsP materials, and the difference of gain peak values can be 8-15nm by optimally designing the material components, so that the superposition of two gain spectrum bandwidths is realized.
Furthermore, the lower waveguide layer 3 and the upper waveguide layer 5 have the same material composition and structure, and have refractive indexes smaller than those of the first quantum well active layer 4 and the second quantum well active layer 10, so that the optical field confinement factor of the active region can be increased, and the optical field can be confined in the active layer to obtain enough gain.
Furthermore, the material bandgaps of the lower waveguide layer 3 and the upper waveguide layer 5 are both larger than the material bandgaps of the first quantum well active layer 4 and the second quantum well active layer 10, which is beneficial to carrier injection, and meanwhile, the increase of the loss in the laser cavity caused by the absorption of the optical field in the waveguide layers is avoided.
The materials, doping types and related structural parameters of the laser layer structures in the embodiment of the invention are shown in the following table 1:
TABLE 1 DFB section Material parameters for layers
In the embodiment of the present invention, the end face of the first quantum well active layer 4 is plated with a high reflective film, the reflectivity may be greater than or equal to 30% and less than or equal to 80%, and the end face of the second quantum well active layer 10 is plated with a high transparent film, the reflectivity may be greater than or equal to 10% and less than or equal to 50%.
Further, the length of the first quantum well active layer 4 may be 100-.
Fig. 2 is a schematic diagram of a longitudinal cross-sectional structure of an FP laser in an embodiment, where the FP laser adopts a structure in which two quantum well regions are grown in a butt joint manner, so as to realize gain spectrum width broadening.
Fig. 3 is a schematic end-face structure diagram of an FP laser in an embodiment, where the FP laser adopts a ridge waveguide structure, and is simple in structure and convenient to manufacture.
Fig. 4 is a schematic diagram of a butt-joint growth structure of two quantum well active regions of an FP laser in an embodiment, and a butt-joint end surface adopts an inclined end surface butt-joint, so that a butt-joint end surface reflection caused by a refractive index difference of the two quantum well active regions is avoided, and an influence of the butt-joint end surface reflection on a lasing longitudinal mode of the FP laser is reduced. Because the reflectivity and the transmissivity of the optical field in the resonant cavity at the butt joint end face are related to the end face inclination angle, the larger the inclination angle is, the lower the transmissivity and the transmissivity are reduced, and in order to reduce the reflectivity of the butt joint end face and avoid the excessive reduction of the transmissivity, the loss in the laser cavity is increased, the preferred set inclination angle is more than or equal to 10 degrees and less than or equal to 20 degrees, under the range of the inclination angle, the transmissivity is more than 90 percent, and the reflectivity is less than 0.1 percent.
Fig. 5 is a schematic diagram of the superposition of gain spectrums of two quantum well active regions of the FP laser in the embodiment. The two quantum well active regions respectively have independent gain spectra with peak wavelengths of
And
after the optical field grows on the same layer in a butt-joint growth mode, the longitudinal modes with different wavelengths can obtain larger gains when the optical field resonates in a resonant cavity with two quantum well active regions, and the FP laser can realize the gain with wider spectrum. Peak wavelength interval
When the interval between the peak wavelengths is excessively large, the total gain spectrum of the two quantum well structures is sunken at the central wavelength, so that the superposed gain spectrum is not flat, and when the interval between the peak wavelengths is excessively small, the bandwidth of the total gain spectrum of the two quantum well structures is not obviously increased. In the embodiment, the FP laser injects current respectively through the first electrode 12 and the second electrode 13, the amplified light field resonates in a resonant cavity of the FP laser, and the laser starts to radiate after the amplified light field reaches a threshold value to generate multi-wavelength laser output; because the laser adopts the quantum well active region with two gain peaks, the laser can provide wider gainGain spectrum, thereby enabling a wider range of FP longitudinal mode to obtain enough gain to realize lasing; by adjusting the magnitude of the injection current of the first electrode 12 and the second electrode 13, the total gain spectrum of the active region of the quantum well of the laser is wider and flatter, the multi-wavelength output of the FP laser is realized, and the output power of each wavelength channel is flat.
It will be understood by those skilled in the art that the foregoing is merely a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included within the scope of the present invention.
Claims (11)
1. A broad spectrum, multi-wavelength FP laser comprising:
a first quantum well active layer; and
the second quantum well active layer and the first quantum well active layer grow on the same layer in a butt joint growth mode, and secondary epitaxial growth is carried out on the same layer;
wherein the material of the first quantum well active layer and the second quantum well active layer is In1-x-yAlxGayAs, wherein the value range of x is 0.2-0.5, the value range of y is 0.48-0.75, and the value of x and y corresponding to the first quantum well active layer is different from the value of x and y corresponding to the second quantum well active layer;
or the material of the first quantum well active layer and the second quantum well active layer is GaaIn1-aAsbP1-bThe value range of a is 0.15-0.3, the value range of b is 0.48-0.8, and the value of a and b corresponding to the first quantum well active layer is different from the value of a and b corresponding to the second quantum well active layer;
wherein a difference in gain peak wavelengths of the first and second quantum well active layers is a predetermined range.
2. The broad spectrum, multi-wavelength FP laser according to claim 1, further comprising:
the lower waveguide layer, the lower buffer layer and the substrate are sequentially arranged below the first quantum well active layer and the second quantum well active layer;
the upper waveguide layer, the upper buffer layer, the corrosion stop layer and the upper cover layer are sequentially arranged on the first quantum well active layer and the second quantum well active layer;
the first contact layer and the second contact layer are positioned on the same layer and are respectively arranged on the left side and the right side of the upper covering layer; and
the first electrode and the second electrode are respectively arranged on the first contact layer and the second contact layer.
3. The broad spectrum multi-wavelength FP laser as claimed in claim 2, wherein the material bandgaps of the lower and upper waveguide layers are both greater than the material bandgaps of the first and second quantum well active layers.
4. The broad spectrum, multi-wavelength FP laser according to claim 1, wherein the first and second quantum well active layers each employ InGaAlAs or GaInAsP multi-quantum well structures, and wherein the predetermined range is 8-20 nm.
5. The broad spectrum, multi-wavelength FP laser as claimed in claim 2, wherein the lower and upper waveguide layers are of the same composition and structure and have refractive indices less than the refractive indices of the first and second quantum well active layers.
6. The broad spectrum, multi-wavelength FP laser of any of claims 1-5, wherein the abutting end faces of the first and second quantum well active layers are butted by inclined end faces, the angle of inclination being greater than or equal to 10 ° and less than or equal to 20 °.
7. The broad spectrum, multi-wavelength FP laser according to claim 2, wherein the first and second contact layers are electrically injection isolated by etching a contact layer of a predetermined length.
8. The broad spectrum multi-wavelength FP laser as claimed in claim 7, wherein the first quantum well active layer end is coated with a high reflectivity film with a reflectivity of 30% or more and 80% or less, and the second quantum well active layer end is coated with a high transmission film with a reflectivity of 10% or more and 50% or less.
9. The broad spectrum multi-wavelength FP laser of claim 7, wherein the length of the first quantum well active layer is 100-500 μm and the length of the second quantum well active layer is 100-500 μm.
10. The broad spectrum, multi-wavelength FP laser of claim 7, wherein the predetermined length is 20-40 μm.
11. A method for butt-joint growth of a first quantum well active layer and a second quantum well active layer of a broad-spectrum multi-wavelength FP laser comprises the following steps:
s1, respectively extending a lower buffer layer, a lower waveguide layer and a first quantum well active layer on the primary epitaxial wafer;
s2, depositing a dielectric film silicon nitride or silicon oxide with a first thickness;
s3, performing mask photoetching to protect the region needing to be reserved;
s4, etching the area needing secondary epitaxy by RIE dry etching and non-selective etching methods, and etching away the first partial area of the first quantum well active layer;
s5, etching the area needing secondary epitaxy by using a selective wet etching method, and etching off the second partial area of the first quantum well active layer;
s6, carrying out high-temperature heat treatment in MOCVD;
s7, secondary epitaxy of the second quantum well active layer;
and S8, removing the mask, and continuing to epitaxially grow the upper waveguide layer, the upper buffer layer, the corrosion stop layer, the upper cover layer and the contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011468660.4A CN112542769B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011123349.6A CN111969415B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser |
| CN202011468660.4A CN112542769B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011123349.6A Division CN111969415B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112542769A true CN112542769A (en) | 2021-03-23 |
| CN112542769B CN112542769B (en) | 2022-04-08 |
Family
ID=73387544
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011468660.4A Active CN112542769B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof |
| CN202011123349.6A Active CN111969415B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011123349.6A Active CN111969415B (en) | 2020-10-20 | 2020-10-20 | Wide-spectrum multi-wavelength Fabry-Perot laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN112542769B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114944593A (en) * | 2022-07-26 | 2022-08-26 | 日照市艾锐光电科技有限公司 | Dual-wavelength monolithic integrated semiconductor laser and application and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114976870B (en) * | 2022-08-03 | 2023-10-13 | 日照市艾锐光电科技有限公司 | Laminated dual-wavelength integrated semiconductor laser and preparation method thereof |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62221185A (en) * | 1986-03-24 | 1987-09-29 | Fujikura Ltd | Semiconductor laser |
| US5187717A (en) * | 1990-10-11 | 1993-02-16 | Kokusai Denshin Denwa Kabushiki Kaisha | Tunable semiconductor laser |
| CN101227061A (en) * | 2007-12-28 | 2008-07-23 | 武汉光迅科技股份有限公司 | Manufacturing method of tunable semiconductor laser and tunable semiconductor laser |
| US20100214651A1 (en) * | 2005-12-09 | 2010-08-26 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (rsoa), rsoa module having the same, and passive optical network using the same |
| US20120070156A1 (en) * | 2010-09-21 | 2012-03-22 | Fujitsu Limited | Semiconductor optical amplifier |
| CN102545047A (en) * | 2011-12-31 | 2012-07-04 | 武汉华工正源光子技术有限公司 | Multiple-quantum well waveguide butt-coupling method |
| JP2014116337A (en) * | 2012-12-06 | 2014-06-26 | Anritsu Corp | Semiconductor light-emitting element, semiconductor light-emitting element module, and optical pulse tester |
| CN107658693A (en) * | 2017-11-16 | 2018-02-02 | 太原理工大学 | A kind of single-chip integration chaos laser chip based on directional scatter feedback |
| US20190326466A1 (en) * | 2018-04-20 | 2019-10-24 | Hamamatsu Photonics K.K. | Optical semiconductor element and method of manufacturing optical semiconductor element |
| CN110401105A (en) * | 2019-08-12 | 2019-11-01 | 武汉敏芯半导体股份有限公司 | Single chip integrated narrow linewidth laser and production method |
| CN110459952A (en) * | 2019-09-10 | 2019-11-15 | 武汉敏芯半导体股份有限公司 | The production method that SAG improves semiconductor laser chip reliability is grown by selective area |
| CN107508143B (en) * | 2017-09-05 | 2020-02-07 | 中国科学院半导体研究所 | Tunable laser and preparation method thereof |
| CN111052520A (en) * | 2017-09-07 | 2020-04-21 | 三菱电机株式会社 | Semiconductor optical device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62221186A (en) * | 1986-03-24 | 1987-09-29 | Fujikura Ltd | Semiconductor laser |
| CN103887709A (en) * | 2014-03-20 | 2014-06-25 | 中国科学院半导体研究所 | Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser |
| CN105429003B (en) * | 2015-11-26 | 2019-08-13 | 深圳瑞波光电子有限公司 | A kind of epitaxial structure and its optical grating construction preparation method |
| CN111740311B (en) * | 2020-08-01 | 2020-11-24 | 武汉敏芯半导体股份有限公司 | Narrow linewidth tunable laser and preparation method thereof |
-
2020
- 2020-10-20 CN CN202011468660.4A patent/CN112542769B/en active Active
- 2020-10-20 CN CN202011123349.6A patent/CN111969415B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62221185A (en) * | 1986-03-24 | 1987-09-29 | Fujikura Ltd | Semiconductor laser |
| US5187717A (en) * | 1990-10-11 | 1993-02-16 | Kokusai Denshin Denwa Kabushiki Kaisha | Tunable semiconductor laser |
| US20100214651A1 (en) * | 2005-12-09 | 2010-08-26 | Electronics And Telecommunications Research Institute | Reflective semiconductor optical amplifier (rsoa), rsoa module having the same, and passive optical network using the same |
| CN101227061A (en) * | 2007-12-28 | 2008-07-23 | 武汉光迅科技股份有限公司 | Manufacturing method of tunable semiconductor laser and tunable semiconductor laser |
| US20120070156A1 (en) * | 2010-09-21 | 2012-03-22 | Fujitsu Limited | Semiconductor optical amplifier |
| CN102545047A (en) * | 2011-12-31 | 2012-07-04 | 武汉华工正源光子技术有限公司 | Multiple-quantum well waveguide butt-coupling method |
| JP2014116337A (en) * | 2012-12-06 | 2014-06-26 | Anritsu Corp | Semiconductor light-emitting element, semiconductor light-emitting element module, and optical pulse tester |
| CN107508143B (en) * | 2017-09-05 | 2020-02-07 | 中国科学院半导体研究所 | Tunable laser and preparation method thereof |
| CN111052520A (en) * | 2017-09-07 | 2020-04-21 | 三菱电机株式会社 | Semiconductor optical device |
| CN107658693A (en) * | 2017-11-16 | 2018-02-02 | 太原理工大学 | A kind of single-chip integration chaos laser chip based on directional scatter feedback |
| US20190326466A1 (en) * | 2018-04-20 | 2019-10-24 | Hamamatsu Photonics K.K. | Optical semiconductor element and method of manufacturing optical semiconductor element |
| CN110401105A (en) * | 2019-08-12 | 2019-11-01 | 武汉敏芯半导体股份有限公司 | Single chip integrated narrow linewidth laser and production method |
| CN110459952A (en) * | 2019-09-10 | 2019-11-15 | 武汉敏芯半导体股份有限公司 | The production method that SAG improves semiconductor laser chip reliability is grown by selective area |
Non-Patent Citations (4)
| Title |
|---|
| JAE-SIK SIM等: "Fabrication of a four-channel monolithic integrated laser array with asymmetric sampled grating lasers", 《SEMICONDUCTOR SCIENCE AND TECHNOLOGY》 * |
| 张灿 等: "单片集成10信道多波长光源", 《中国激光》 * |
| 李嘉恒 等: "高集成硅基微波光子芯片的研究进展及趋势", 《光通信研究》 * |
| 饶岚 等: "ICP刻蚀优化及在多波长分布反馈式激光器阵列中的应用", 《激光与光电子学进展》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114944593A (en) * | 2022-07-26 | 2022-08-26 | 日照市艾锐光电科技有限公司 | Dual-wavelength monolithic integrated semiconductor laser and application and preparation method thereof |
| CN114944593B (en) * | 2022-07-26 | 2023-02-03 | 日照市艾锐光电科技有限公司 | Dual-wavelength monolithic integrated semiconductor laser and application and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111969415B (en) | 2021-01-26 |
| CN112542769B (en) | 2022-04-08 |
| CN111969415A (en) | 2020-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4977377B2 (en) | Semiconductor light emitting device | |
| JP2959902B2 (en) | Semiconductor laser, device having the same, and method of manufacturing the same | |
| US7340142B1 (en) | Integrated optoelectronic device and method of fabricating the same | |
| US5208183A (en) | Method of making a semiconductor laser | |
| JP2000216492A (en) | Semiconductor light element, its manufacture, and semiconductor optical device | |
| CN112542769B (en) | Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof | |
| JP2001345514A (en) | Semiconductor laser and its manufacturing method | |
| JPH10135564A (en) | Semiconductor photowaveguide structure, photodevice and its manufacturing method | |
| JPH07226566A (en) | Quantum well semiconductor laser and its manufacture | |
| JP2001015859A (en) | Semiconductor layer element and its manufacture | |
| JPH04105383A (en) | Manufacture of optical semiconductor element | |
| US6552358B2 (en) | High power single mode laser and method of fabrication | |
| JPH05327112A (en) | Manufacture of semiconductor laser | |
| JP4984514B2 (en) | Semiconductor light emitting device and method for manufacturing the semiconductor light emitting device | |
| US5828085A (en) | Light emitting diode having light-emitting and light-absorbing regions | |
| JP3857141B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| WO2021209114A1 (en) | Optical device | |
| CN112821197A (en) | Light emitting chip manufacturing method and light emitting chip | |
| CN111916999A (en) | Distributed feedback laser with groove structure and preparation method | |
| CN114899697B (en) | Dual-wavelength cascade semiconductor laser and preparation method thereof | |
| JP3149962B2 (en) | Multi-wavelength semiconductor laser device and driving method thereof | |
| CN115051239A (en) | Tunable electroabsorption modulation laser and preparation method thereof | |
| KR100674822B1 (en) | Method of producing semiconductor laser device | |
| JP2000101186A (en) | Semiconductor optical element | |
| KR101003970B1 (en) | Index guiding stripe type high power semiconductor laser diode and method for the fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |