CN102545047A - Multiple-quantum well waveguide butt-coupling method - Google Patents
Multiple-quantum well waveguide butt-coupling method Download PDFInfo
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- CN102545047A CN102545047A CN2011104580248A CN201110458024A CN102545047A CN 102545047 A CN102545047 A CN 102545047A CN 2011104580248 A CN2011104580248 A CN 2011104580248A CN 201110458024 A CN201110458024 A CN 201110458024A CN 102545047 A CN102545047 A CN 102545047A
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Abstract
The invention relates to a multiple-quantum well waveguide butt-coupling method comprising the following steps of: A, carrying out primary epitaxy on a substrate to obtain a multiple-quantum well structure; B, after a dielectric film is deposited, carrying out mask photoetching, and removing a waveguide part of a first region requiring secondary epitaxy by using a three-step etching method; C, placing an epitaxial wafer into metal organic chemical vapor deposition equipment for high-temperature treatment; and D, carrying out secondary epitaxial growth to obtain a second multiple-quantum well structure. By using the method, an attractive interface etching appearance can be achieved, cavities caused during growth can be avoided, the butting quality can be effectively improved, the coupling loss can be reduced, and good repeatability can be obtained. The multiple-quantum well waveguide butt-coupling method can be used for manufacture and batch production of various photoelectronic integrated chips.
Description
Technical field
The present invention relates to the photoelectric device integrated technology, relate in particular to a kind of multi-quantum well waveguide butt joint coupling process, it is used for the manufacture craft of semiconductor optoelectronic integrated chip.
Background technology
The a large amount of discrete devices that at present used in the optical fiber telecommunications system; These discrete devices not only need encapsulate separately; Be coupled and aligned but also need carry out precision with I/O optical fiber, the not only time-consuming consumption power that is coupled and aligned of device and optical fiber is also usually because optical fiber mode fields and not matching of device mould field cause great coupling loss; Be of coupled connections a little the existence of simultaneously a large amount of I/O optical fiber and device also can bring the hidden danger of reliability, and independent devices encapsulates and also causes the cost increase.
The monolithic integrated photonic device integrates the device monolithic of at least two kinds of functions; For example the monolithic between the active device is integrated, and the monolithic between the passive device is integrated, or the monolithic of active device and passive device is integrated etc.; So no longer need be between the device of difference in functionality through realizing interconnection with being coupled and aligned of optical fiber; Therefore avoid the coupling loss between each function element, simplified the coupling encapsulation of device, reduced device size; Improve the stability and the reliability of device, and reduced device cost.
The existing integrated technology of photoelectric device that realizes mainly contains: select region-growing method (Selective Area Growth, SAG), quantum well mixing method (Quantum Well Intermixing) and butt joint coupling process (Butt-Joint) etc.Wherein:
Selecting region-growing method is before epitaxial growth, through SiO
2Or the SiNx mask, make some zone of epitaxial wafer can not nucleating growth, the zone of difference in functionality has the different speeds of growth, thus the quantum-well materials that reaches each region growing has different-thickness, that is the purpose of different band gap wavelengths.It is simple to select region-growing method to have technology, the advantage that rate of finished products is high, but performance that can not independent optimization difference in functionality region material.
The quantum well mixing method is behind the epitaxial growth multi-quantum pit structure, through follow-up ion inject, method such as impurity thermal diffusion and light absorption are induced, realize that the zones of different of same epitaxial wafer has the different band gap structure, thereby reach the integrated purpose of photon.The advantage of quantum well mixing method is that material epitaxy growth number of times is few, and manufacture craft is simple, but its annealing process will reduce the performance of mqw material, and process repeatability is relatively poor.
The butt joint coupling process is epitaxial wafer carries out once outside, to delay, and through photoetching and corrosion, removes some regional part epitaxial material, and then grows and to have the material of different-thickness, different band gap wavelengths, thereby reaches the integrated purpose of photon.The butt joint coupling process can carry out independent optimization to the zone with difference in functionality, therefore can produce high performance photonic integrated device, but the common extension number of times of its method is more, and complex process.
Docking at present coupling technique in the world mainly is that the method that adopts dry etching to combine with wet etching realizes; After promptly falling to need the part material in regrowth zone with dry etching earlier; Continue erosion removal part material with selectivity or non-selective corrosive liquid again, dock the coupling growth then.Though adopt non-selective corrosive liquid can obtain desirable interfacial corrosion pattern, exist corrosion depth to be difficult to the accurately problem of control, process repeatability is relatively poor; On the other hand, adopt selective corrosion liquid, though on corrosion depth, can finely control, the sideetching degree of depth of different materials is inconsistent, and the cavity appears in the interface when being prone to cause butt joint coupling growth, and coupling efficiency is not high.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of multi-quantum well waveguide butt joint coupling process, so that its technology is simple and easy to repetition, butt joint coupling loss is little, and is applicable to the semiconductor optoelectronic integrated chip manufacture craft that scale is produced in batches.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of multi-quantum well waveguide butt joint coupling process comprises:
A, on substrate extension first multi-quantum pit structure once;
B, treat deposition dielectric film after, carry out mask lithography, adopt three step etching methods to remove the waveguide part of the first area that need carry out secondary epitaxy;
C, epitaxial wafer inserted carry out high-temperature heat treatment in the metal organic chemical vapor deposition equipment;
D, carry out secondary epitaxy second multi-quantum pit structure of growing.
Wherein, said substrate is a N type substrate.
Described first multi-quantum pit structure comprises ducting layer on first lower waveguide layer, first multiple quantum well layer and first.
Described deielectric-coating is silicon dioxide or silicon nitride.
Said three step etching methods are specially: adopt the RIE dry etching successively, non-selective wet etching and selective wet etching carry out the waveguide of the first area of secondary epitaxy and partly carry out etching to needs.
The temperature of said high-temperature heat treatment is 680 degrees centigrade, and the time is 15 minutes.
Said second multi-quantum pit structure comprises second lower waveguide layer, ducting layer on second multiple quantum well layer and second.
Said secondary epitaxy second multi-quantum pit structure of growing that carries out, utilize the heat treatment of metal organic chemical vapor deposition equipment after cooling carry out the secondary epitaxy growth.
Multi-quantum well waveguide butt joint coupling process provided by the present invention has the following advantages:
1) combined non-selective and characteristics selective wet etching technology, promptly adopted non-selective wet corrosion technique earlier,, adopted selective corrosion technology to come accurately to control corrosion depth then to obtain interfacial corrosion pattern preferably.
2) adopted interface topography after high-temperature heat treatment method comes level and smooth wet etching, because selective wet etching can cause the corrosion rate of side direction different materials inconsistent, so sidewall is unsmooth; Be prone to the cavity during butt joint growth; And the employing high-temperature heat treatment method, because the migration of surface atom can make that the surface is more level and smooth; Produce the cavity when having avoided growth at the interface, improved the butt joint coupling mass.In addition; In metal organic chemical vapor deposition equipment, carry out high-temperature heat treatment, protect the surface, therefore reduced the desorption of surperficial phosphorus atoms in the heat treatment process owing to can feed phosphine; Improve quality of materials, avoided the insertion loss that brings because of the material surface quality deterioration.
Description of drawings
Fig. 1 is the structural representation of an extension MQW of the present invention;
Fig. 2 is the schematic cross-section after the present invention's three step etching methods;
Fig. 3 adopts the schematic cross-section after the metal organic chemical vapor deposition equipment high-temperature heat treatment for the present invention;
Fig. 4 is the multi-quantum pit structure schematic cross-section behind the secondary epitaxy of the present invention.
[critical piece and symbol description]
1:N type substrate
2: resilient coating
3: the first lower waveguide layers
4: the first multiple quantum well layers
Ducting layer on 5: the first
6: the one P type layers
7: deielectric-coating
8: the first area
9: second area
10: the second lower waveguide layers
11: the second multiple quantum well layers
Ducting layer on 12: the second
13: the two P type layers.
Embodiment
Below in conjunction with accompanying drawing and embodiments of the invention method of the present invention is done further detailed explanation.
Main thought of the present invention: utilize non-selective corrosion to control the interfacial corrosion pattern; And utilize selective corrosion to come accurately control corrosion depth; And adopt metal organic chemical vapor deposition (MOCVD) high-temperature heat treatment method to optimize the interfacial corrosion pattern; Thereby it is little to reach the butt joint interface optical loss, and technology is purpose simply repeatably.
Fig. 1 is an extension multi-quantum pit structure sketch map of the present invention, and with reference to Fig. 2～Fig. 4, this multi-quantum well waveguide butt joint coupling process mainly comprises the steps:
Step 1: extension first multi-quantum pit structure once on N type substrate.
On N type substrate 1, adopt metal organic chemical vapor deposition (MOCVD) method grown buffer layer 2 successively, first lower waveguide layer 3 of lattice match, strain first multiple quantum well layer 4, lattice match first on ducting layer 5 and P type layer 6.
Wherein, resilient coating 2 thick 500nm, first lower waveguide layer, 3 thick 100nm, first multiple quantum well layer, 4 thickness are 115nm, and ducting layer 5 thickness are 90nm on first, and P type layer 6 thickness are 50nm.
Here, buffer layer thickness is generally 300-1000nm, and the first lower waveguide layer thickness is generally 60-150nm, and the first MQW layer thickness is generally 60-130nm, and last ducting layer thickness is generally 60-150nm.
Here, this N type substrate 1, resilient coating 2, P type layer 6, select indium phosphide (InP) material for use usually;
After an epitaxial growth was intact, using plasma strengthened the silicon dioxide (SiO of chemical vapour deposition (CVD) (PECVD) method at epitaxial wafer superficial growth 200nm
2) mask layer 7 of material, and adopt photoetching and lithographic technique to make mask pattern, form first area 8 and second area 9, the SiO of making
2Mask pattern is long 650 μ m, and the cycle bar shaped of wide 25 μ m is 1000 μ m along figure cycle of bar length direction, and the figure cycle of bar cross direction is 250 μ m.
Step 2: behind the deposition dielectric film 7, carry out mask lithography, adopt three step etching methods to remove the waveguide part in the zone that needs secondary epitaxy.Be specially:
Adopt first lower waveguide layer 3 of three step etching methods with second area 9, a ducting layer 5 and a P type layer 6 are removed on the multiple quantum well layer 4, the first:
At first, etch away ducting layer 5 on the P type layer 6, the first of second area 9 with reactive ion etching technology, multiple quantum well layer 4, and the lower waveguide layer 3 of 20nm;
Then, with hydrobromic acid (HB
r): hydrogen peroxide solution (H
2O
2): deionized water (H
2O) the non-selective corrosive liquid of (volume ratio is 5:1:20) corrodes first lower waveguide layer 3 that removes 60nm under the zero degrees celsius temperature;
Use sulfuric acid (H again
2SO
4): hydrogen peroxide solution (H
2O
2): deionized water (H
2O) the selective corrosion corrosion of (volume ratio is 1:1:100) is removed first lower waveguide layer 3 of second area 9 remainders, and the interface after corroding is as shown in Figure 2.
Step 3: epitaxial wafer inserted carry out high-temperature heat treatment in the metal organic chemical vapor deposition equipment.Be specially:
Epitaxial wafer after the corrosion is carried out putting into metal organic chemical vapor deposition equipment (MOCVD) after strictness is cleaned carry out high-temperature heat treatment.Heat treatment is at phosphine (PH
3) protection under carry out, temperature is about 680 degrees centigrade, the time is 15 minutes, the interface after the heat treatment is as shown in Figure 3.
Step 4: secondary epitaxy second multi-quantum pit structure of growing.Be specially:
The secondary epitaxy growth is carried out in cooling after utilizing the heat treatment of MOCVD equipment; Growth material is followed successively by second lower waveguide layer 10 of InGaAsP (InGaAsP) material of 80nm; Second multiple quantum well layer 11 of 156nm, the InGaAsP of 90nm (InGaAsP) material second on the P type layer 13 of ducting layer 12 and 29nm.
Shown in the sectional view of the multi-quantum pit structure behind the secondary epitaxy of Fig. 4.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.
Claims (8)
1. a multi-quantum well waveguide butt joint coupling process is characterized in that, comprising:
A, on substrate extension first multi-quantum pit structure once;
B, treat deposition dielectric film after, carry out mask lithography, adopt three step etching methods to remove the waveguide part of the first area that need carry out secondary epitaxy;
C, epitaxial wafer inserted carry out high-temperature heat treatment in the metal organic chemical vapor deposition equipment;
D, carry out secondary epitaxy second multi-quantum pit structure of growing.
2. multi-quantum well waveguide butt joint coupling process according to claim 1 is characterized in that wherein said substrate is a N type substrate.
3. multi-quantum well waveguide butt joint coupling process according to claim 1 is characterized in that described first multi-quantum pit structure comprises ducting layer on first lower waveguide layer, first multiple quantum well layer and first.
4. multi-quantum well waveguide butt joint coupling process according to claim 1 is characterized in that described deielectric-coating is silicon dioxide or silicon nitride.
5. multi-quantum well waveguide butt joint coupling process according to claim 1; It is characterized in that; Said three step etching methods; Be specially: adopt the RIE dry etching successively, non-selective wet etching and selective wet etching carry out the waveguide of the first area of secondary epitaxy and partly carry out etching to needs.
6. multi-quantum well waveguide butt joint coupling process according to claim 1 is characterized in that the temperature of said high-temperature heat treatment is 680 degrees centigrade, and the time is 15 minutes.
7. multi-quantum well waveguide butt joint coupling process according to claim 1 is characterized in that, said second multi-quantum pit structure, and generating has second lower waveguide layer, ducting layer on second multiple quantum well layer and second.
8. multi-quantum well waveguide according to claim 1 butt joint coupling process is characterized in that, said secondary epitaxy second multi-quantum pit structure of growing that carries out, utilize the heat treatment of metal organic chemical vapor deposition equipment after cooling carry out the secondary epitaxy growth.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646348A (en) * | 2018-05-16 | 2018-10-12 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet multi-quantum well waveguide production method |
| CN110718849A (en) * | 2019-08-23 | 2020-01-21 | 湖北光安伦科技有限公司 | Butt coupling method for monolithic integrated chip |
| CN112259649A (en) * | 2020-11-05 | 2021-01-22 | 武汉敏芯半导体股份有限公司 | Super-radiation light emitting diode and manufacturing method thereof |
| CN112327412A (en) * | 2020-10-27 | 2021-02-05 | 中国科学院微电子研究所 | Manufacturing method of double-layer silicon-based photonic device and double-layer silicon-based photonic device |
| CN112542769A (en) * | 2020-10-20 | 2021-03-23 | 武汉敏芯半导体股份有限公司 | Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof |
| CN115144967A (en) * | 2021-03-31 | 2022-10-04 | 北京摩尔芯光半导体技术有限公司 | Coupling packaging structure and coupling method |
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| CN101343733A (en) * | 2008-08-28 | 2009-01-14 | 上海蓝光科技有限公司 | Method for MOVCD growth nitride epitaxial layer |
| CN101950775A (en) * | 2010-08-17 | 2011-01-19 | 武汉华工正源光子技术有限公司 | Method for manufacturing double diffusion type optical avalanche diode with incident light on back surface by adopting epitaxial equipment |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646348A (en) * | 2018-05-16 | 2018-10-12 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet multi-quantum well waveguide production method |
| CN108646348B (en) * | 2018-05-16 | 2019-11-22 | 德州尧鼎光电科技有限公司 | A kind of deep ultraviolet multi-quantum well waveguide production method |
| CN110718849A (en) * | 2019-08-23 | 2020-01-21 | 湖北光安伦科技有限公司 | Butt coupling method for monolithic integrated chip |
| CN112542769A (en) * | 2020-10-20 | 2021-03-23 | 武汉敏芯半导体股份有限公司 | Wide-spectrum multi-wavelength Fabry-Perot laser and manufacturing method thereof |
| CN112327412A (en) * | 2020-10-27 | 2021-02-05 | 中国科学院微电子研究所 | Manufacturing method of double-layer silicon-based photonic device and double-layer silicon-based photonic device |
| CN112327412B (en) * | 2020-10-27 | 2023-02-03 | 中国科学院微电子研究所 | Manufacturing method of double-layer silicon-based photonic device and double-layer silicon-based photonic device |
| CN112259649A (en) * | 2020-11-05 | 2021-01-22 | 武汉敏芯半导体股份有限公司 | Super-radiation light emitting diode and manufacturing method thereof |
| CN115144967A (en) * | 2021-03-31 | 2022-10-04 | 北京摩尔芯光半导体技术有限公司 | Coupling packaging structure and coupling method |
| WO2022206885A1 (en) * | 2021-03-31 | 2022-10-06 | 北京摩尔芯光半导体技术有限公司 | Coupling packaging structure and coupling method |
| CN115144967B (en) * | 2021-03-31 | 2023-03-10 | 北京摩尔芯光半导体技术有限公司 | Coupling packaging structure and coupling method |
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