CN112542522A - 一种铜铋碘太阳能电池光吸收层的掺杂方法 - Google Patents
一种铜铋碘太阳能电池光吸收层的掺杂方法 Download PDFInfo
- Publication number
- CN112542522A CN112542522A CN202011421118.3A CN202011421118A CN112542522A CN 112542522 A CN112542522 A CN 112542522A CN 202011421118 A CN202011421118 A CN 202011421118A CN 112542522 A CN112542522 A CN 112542522A
- Authority
- CN
- China
- Prior art keywords
- salt
- substrate
- iodine
- solar cell
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- WHPDMISEUKLRPZ-UHFFFAOYSA-N [Cu].[I].[Bi] Chemical compound [Cu].[I].[Bi] WHPDMISEUKLRPZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 230000031700 light absorption Effects 0.000 title claims abstract description 13
- 239000002243 precursor Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000000243 solution Substances 0.000 claims abstract description 47
- 238000000137 annealing Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000004528 spin coating Methods 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 17
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 239000003607 modifier Substances 0.000 claims abstract description 11
- 239000012266 salt solution Substances 0.000 claims abstract description 10
- 238000003756 stirring Methods 0.000 claims abstract description 10
- 239000010936 titanium Substances 0.000 claims abstract description 8
- 150000001879 copper Chemical class 0.000 claims abstract description 6
- 150000001621 bismuth Chemical class 0.000 claims abstract description 5
- 150000002496 iodine Chemical class 0.000 claims abstract description 5
- 150000003608 titanium Chemical class 0.000 claims abstract description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- 239000013077 target material Substances 0.000 claims description 16
- 239000006228 supernatant Substances 0.000 claims description 15
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 10
- 238000001556 precipitation Methods 0.000 claims description 10
- 229910003074 TiCl4 Inorganic materials 0.000 claims description 8
- PGDYOQVZBLSBJT-UHFFFAOYSA-M N(=O)[O-].[I+] Chemical compound N(=O)[O-].[I+] PGDYOQVZBLSBJT-UHFFFAOYSA-M 0.000 claims description 6
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 6
- NUZYGONUYYINRR-UHFFFAOYSA-A trisodium;2-hydroxypropane-1,2,3-tricarboxylate;titanium(4+) Chemical compound [Na+].[Na+].[Na+].[Ti+4].[Ti+4].[Ti+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NUZYGONUYYINRR-UHFFFAOYSA-A 0.000 claims description 6
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 5
- NJQDHGVNMKWAMP-UHFFFAOYSA-N azane;copper;formic acid Chemical compound N.[Cu].OC=O NJQDHGVNMKWAMP-UHFFFAOYSA-N 0.000 claims description 5
- TXKAQZRUJUNDHI-UHFFFAOYSA-K bismuth tribromide Chemical compound Br[Bi](Br)Br TXKAQZRUJUNDHI-UHFFFAOYSA-K 0.000 claims description 5
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 5
- SBSSZSCMFDYICE-UHFFFAOYSA-N tetrabutylazanium;triiodide Chemical class I[I-]I.CCCC[N+](CCCC)(CCCC)CCCC SBSSZSCMFDYICE-UHFFFAOYSA-N 0.000 claims description 5
- 229960001124 trientine Drugs 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- SFOQXWSZZPWNCL-UHFFFAOYSA-K bismuth;phosphate Chemical compound [Bi+3].[O-]P([O-])([O-])=O SFOQXWSZZPWNCL-UHFFFAOYSA-K 0.000 claims description 4
- AJDQRXZZJBZOPW-UHFFFAOYSA-L copper;azane;carbonate Chemical compound N.N.N.N.[Cu+2].[O-]C([O-])=O AJDQRXZZJBZOPW-UHFFFAOYSA-L 0.000 claims description 4
- DKUYEPUUXLQPPX-UHFFFAOYSA-N dibismuth;molybdenum;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Mo].[Mo].[Bi+3].[Bi+3] DKUYEPUUXLQPPX-UHFFFAOYSA-N 0.000 claims description 4
- LITQZINTSYBKIU-UHFFFAOYSA-F tetracopper;hexahydroxide;sulfate Chemical class [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Cu+2].[Cu+2].[Cu+2].[Cu+2].[O-]S([O-])(=O)=O LITQZINTSYBKIU-UHFFFAOYSA-F 0.000 claims description 4
- WDRCVXGINNJWPH-UHFFFAOYSA-N tris(6-methylheptyl) benzene-1,2,4-tricarboxylate Chemical compound CC(C)CCCCCOC(=O)C1=CC=C(C(=O)OCCCCCC(C)C)C(C(=O)OCCCCCC(C)C)=C1 WDRCVXGINNJWPH-UHFFFAOYSA-N 0.000 claims description 4
- QZCLKYGREBVARF-UHFFFAOYSA-N Acetyl tributyl citrate Chemical compound CCCCOC(=O)CC(C(=O)OCCCC)(OC(C)=O)CC(=O)OCCCC QZCLKYGREBVARF-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000002250 absorbent Substances 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- HORIEOQXBKUKGQ-UHFFFAOYSA-N bis(7-methyloctyl) cyclohexane-1,2-dicarboxylate Chemical compound CC(C)CCCCCCOC(=O)C1CCCCC1C(=O)OCCCCCCC(C)C HORIEOQXBKUKGQ-UHFFFAOYSA-N 0.000 claims description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- OIDQOTHCTOVWOF-UHFFFAOYSA-N bis(6-methylheptyl) cyclohexane-1,2-dicarboxylate Chemical compound CC(C)CCCCCOC(=O)C1CCCCC1C(=O)OCCCCCC(C)C OIDQOTHCTOVWOF-UHFFFAOYSA-N 0.000 claims description 2
- DZMOLBFHXFZZBF-UHFFFAOYSA-N prop-2-enyl dihydrogen phosphate Chemical compound OP(O)(=O)OCC=C DZMOLBFHXFZZBF-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims 1
- 239000013049 sediment Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 239000002244 precipitate Substances 0.000 description 8
- 239000013535 sea water Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- RYRDKOIZZRUCMC-UHFFFAOYSA-N 2-hydroxy-4-methyl-1,3,2$l^{5}-dioxaphospholane 2-oxide Chemical compound CC1COP(O)(=O)O1 RYRDKOIZZRUCMC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- XDLSXXMJBCNXPS-UHFFFAOYSA-N [Pb].CN Chemical class [Pb].CN XDLSXXMJBCNXPS-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- IRMFKULDASQVRI-UHFFFAOYSA-K sodium;2-hydroxypropane-1,2,3-tricarboxylate;titanium(4+) Chemical compound [Na+].[Ti+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O IRMFKULDASQVRI-UHFFFAOYSA-K 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明提出了一种铜铋碘太阳能电池光吸收层的掺杂方法,步骤如下:S1,金属氧化物溶解于有机溶剂,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液旋涂于导电玻璃上,涂布后的导电玻璃在100‑150℃条件下退火0.5‑1小时,制成基板;S2,将铜盐、铋盐、碘盐、钛盐分别溶解于有机溶剂,将4种盐溶液混合并添加改性剂,搅拌混匀后制成吸收层前驱体液,将吸收层前驱体液涂于基板上,涂布前驱体液后的基板在80‑100℃条件下退火0.5‑1小时,制成CuBi0.5Ti0.5I4吸收层。本发明通过在吸收层前驱液中掺杂钛和改性剂,增加吸收层的耐侵蚀性,从而提高海洋环境下太阳能电池板的工作效能。
Description
技术领域
本发明属于太阳能电池领域,具体涉及一种铜铋碘太阳能电池光吸收层的掺杂方法。
背景技术
在环境污染问题日益严重及能源需求与日俱增的今天,廉价、无污染、应用范围广且资源丰富的太阳能作为一种新能源脱颖而出。太阳能电池是通过光电效应或者光化学效应直接把太阳能转化成电能的装置。
传统的卤化甲胺铅钙钛矿含有重金属铅,为了避免铅的毒性和环境污染问题,无铅钙钛矿太阳能电池材料引起了人们的重视。在铅的替代元素中,铋和铜无毒且储量丰富,受到众多科学家的青睐。
以太阳能为动力来源或辅助电力能源的新型船舶近年来获得广泛关注和研究,将环保、节能的铜铋碘太阳能电池应用于船舶之上已逐渐成为航运界探索节能减排解决方案的重要突破点。
船用太阳能光伏系统所处的海洋环境极为复杂,空气湿度高、风速快、盐颗粒易积聚和腐蚀性物质粘附等因素引发的电池板污染、着色、腐蚀、磨损以及透光率和散热系数衰退等问题较为突出,这都会在很大程度上影响到太阳能电池的工作特性,进而导致整个系统转换效率下降。因此研究耐海水侵蚀的铜铋碘太阳能电池,提高海洋环境下太阳能电池板的工作效能是铜铋碘太阳能电池研究工作的重中之重。
发明内容
有鉴于此,本发明提出了一种耐海水侵蚀的一种铜铋碘太阳能电池光吸收层的掺杂方法。
本发明的技术方案是这样实现的:本发明提供了一种铜铋碘太阳能电池光吸收层的掺杂方法。
一种铜铋碘太阳能电池光吸收层的掺杂方法,掺杂方法如下:
S1,金属氧化物溶解于有机溶剂,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液旋涂于导电玻璃上,涂布后的导电玻璃在100-150℃条件下退火0.5-1小时,制成基板;
S2,将铜盐、铋盐、碘盐、钛盐分别溶解于有机溶剂,将4种盐溶液混合并添加改性剂,搅拌混匀后制成吸收层前驱体液,将吸收层前驱体液涂于基板上,涂布前驱体液后的基板在80-100℃条件下退火0.5-1小时,制成CuBi0.5Ti0.5I4吸收层。
在以上技术方案的基础上,优选的,步骤S2吸收层前驱体液涂布基板前,还包括:将前吸收层驱体液在转速8000-10000r/min、常温条件下离心10-30分钟,去除沉淀,留上清液。
在以上技术方案的基础上,优选的,吸收层前驱体液经过离心去沉淀后,还包括:将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为100-500Pa,温度为300-500℃的条件下,在基板上镀一层厚度为400-700nm的薄膜,镀膜后的基板在100-150℃条件下退火0.5-1小时。
在以上技术方案的基础上,优选的,真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为50-100nm的薄膜,蒸汽沉淀后的基板在80-100℃条件下退火0.5-1小时。
在以上技术方案的基础上,优选的,有机溶剂为甲苯、二丙酮醇、磷酸丙烯酯、环丁砜、三乙烯四胺、环己烯、二甲基乙酰胺中的一种或多种组合。
在以上技术方案的基础上,优选的,金属氧化物选用TiO2、NiO、Al2O3、ZrO2、Cr2O3中的一种。
在以上技术方案的基础上,优选的,改性剂选自环己烷-1,2-二羧酸二异壬酯、聚乙二酸丙二醇酯、环己烷-1,2-二羧酸二异辛酯、乙酰柠檬酸三丁酯、偏苯三酸三异辛酯中的一种。
在以上技术方案的基础上,优选的,步骤S1旋涂转速为2000-3000rpm,时间为0.5-1分钟。
在以上技术方案的基础上,优选的,铜盐选自碱式硫酸铜盐、甲酸铵铜盐和铵铜碳酸盐中的一种。
在以上技术方案的基础上,优选的,铋盐选自溴化铋、磷酸铋盐和钼酸铋盐中的一种。
在以上技术方案的基础上,优选的,碘盐选自亚硝酸碘盐和四正丁铵三碘盐中的一种。
在以上技术方案的基础上,优选的,钛盐选自柠檬酸钠钛盐和二氨基四氯钛酸盐中的一种。
本发明的一种铜铋碘太阳能电池光吸收层的掺杂方法相对于现有技术具有以下有益效果:
(1)钛具有重量轻、强度高、耐湿腐蚀的特点,将钛掺杂到铜铋碘太阳能电池光吸收层,制备CuBi0.5Ti0.5I4光吸收层,增加铜铋碘太阳能电池的耐侵蚀性。
(2)在前驱体液中加入耐腐蚀性的改性剂,通过真空镀膜,在基板表面形成一层耐腐蚀性强的晶体薄膜,从而提高海洋环境下太阳能电池板的工作效能。
(3)金属盐、有机溶剂和改性剂混合后,易产生沉淀和浑浊的现象,若直接涂布在基板上,则会影响电池的光电反应,本发明通过转速8000-10000r/min、常温条件下离心10-30分钟,去除沉淀,减少杂质。
(4)铜盐的颜色难以去除,容易降低光吸收层的透光率,本发明采用真空镀膜的方法,通过控制镀膜真空度和镀膜厚度,来降低镀膜厚度,增加电池的透光率。
(5)真空镀膜后采用蒸汽沉淀TiCl4形成一层耐腐蚀性膜,以防真空镀膜厚度太薄,影响光吸收层的其他性能参数。
具体实施方式
下面将结合本发明实施方式,对本发明实施方式中的技术方案进行清楚、完整地描述,显然,所描述的实施方式仅仅是本发明一部分实施方式,而不是全部的实施方式。基于本发明中的实施方式,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式,都属于本发明保护的范围。
实施例1
S1,金属氧化物TiO2溶解于甲苯,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为2000rpm,时间为30秒,涂布后的导电玻璃在100℃条件下退火30分钟,制成基板;
S2,将碱式硫酸铜盐、溴化铋、亚硝酸碘盐、柠檬酸钠钛盐分别溶解于甲苯,将4种盐溶液混合并添加环己烷-1,2-二羧酸二异壬酯,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液在转速8000r/min、常温条件下离心10分钟,去除沉淀,留上清液;将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为100Pa,温度为300℃的条件下,在基板上镀一层厚度为400nm的薄膜;真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为50nm的薄膜,蒸汽沉淀后的基板在80℃条件下退火30分钟。
实施例2
S1,金属氧化物NiO溶解于二丙酮醇,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为3000rpm,时间为1分钟,涂布后的导电玻璃在150℃条件下退火1小时,制成基板;
S2,将甲酸铵铜盐、磷酸铋盐、四正丁铵三碘盐、二氨基四氯钛酸盐分别溶解于二丙酮醇,将4种盐溶液混合并添加聚乙二酸丙二醇酯,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液在转速10000r/min、常温条件下离心30分钟,去除沉淀,留上清液;将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为500Pa,温度为500℃的条件下,在基板上镀一层厚度为700nm的薄膜;真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为100nm的薄膜,蒸汽沉淀后的基板在100℃条件下退火1小时。
实施例3
S1,金属氧化物Al2O3溶解于磷酸丙烯酯,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为2500rpm,时间为40秒,涂布后的导电玻璃在110℃条件下退火40分钟,制成基板;
S2,将铵铜碳酸盐、钼酸铋盐、亚硝酸碘盐、柠檬酸钠钛盐分别溶解于磷酸丙烯酯,将4种盐溶液混合并添加环己烷-1,2-二羧酸二异辛酯,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液在转速9000r/min、常温条件下离心20分钟,去除沉淀,留上清液;将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为200Pa,温度为400℃的条件下,在基板上镀一层厚度为500nm的薄膜;真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为60nm的薄膜,蒸汽沉淀后的基板在90℃条件下退火40分钟。
实施例4
S1,金属氧化物ZrO2溶解于有机溶剂环丁砜,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为2200rpm,时间为50秒,涂布后的导电玻璃在120℃条件下退火50分钟,制成基板;
S2,将碱式硫酸铜盐、溴化铋、亚硝酸碘盐、柠檬酸钠钛盐分别溶解于环丁砜,将4种盐溶液混合并添加乙酰柠檬酸三丁酯,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液在转速8500r/min、常温条件下离心10分钟,去除沉淀,留上清液;将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为400Pa,温度为350℃的条件下,在基板上镀一层厚度为600nm的薄膜;真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为80nm的薄膜,蒸汽沉淀后的基板在89℃条件下退火50分钟。
实施例5
S1,金属氧化物Cr2O3溶解于三乙烯四胺,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为2000rpm,时间为30秒,涂布后的导电玻璃在100℃条件下退火30分钟,制成基板;
S2,将甲酸铵铜盐、磷酸铋盐、亚硝酸碘盐、柠檬酸钠钛盐分别溶解于有机溶剂三乙烯四胺,将4种盐溶液混合并添加改性剂偏苯三酸三异辛酯,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液在转速10000r/min、常温条件下离心30分钟,去除沉淀,留上清液;将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为500Pa,温度为500℃的条件下,在基板上镀一层厚度为700nm的薄膜;真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为100nm的薄膜,蒸汽沉淀后的基板在100℃条件下退火1小时。
实施例6
S1,金属氧化物TiO2溶解于有机溶剂甲苯、环丁砜和三乙烯四胺,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为2000rpm,时间为1分钟,涂布后的导电玻璃在150℃条件下退火1小时,制成基板;
S2,将甲酸铵铜盐、钼酸铋盐、四正丁铵三碘盐、柠檬酸钠钛盐分别溶解于甲苯、二丙酮醇、环己烯和二甲基乙酰胺,将4种盐溶液混合并添加改性剂偏苯三酸三异辛酯,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液在转速8000r/min、常温条件下离心10分钟,去除沉淀,留上清液;将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为100Pa,温度为300℃的条件下,在基板上镀一层厚度为700nm的薄膜;真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为100nm的薄膜,蒸汽沉淀后的基板在100℃条件下退火1小时。
实施例7
S1,金属氧化物NiO溶解于二甲基亚砜,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液采用旋涂法涂布于导电玻璃上,旋涂转速为2000rpm,时间为1分钟,涂布后的导电玻璃在100℃条件下退火1小时,制成基板;
S2,将铵铜碳酸盐、溴化铋、四正丁铵三碘盐、二氨基四氯钛酸盐分别溶解于二甲基亚砜,将4种盐溶液混合,搅拌混匀后制成吸收层前驱体液;将吸收层前驱体液涂于基板上,涂布前驱体液后的基板在80℃条件下退火1小时,制成CuBi0.5Ti0.5I4吸收层。
实施例1-6为本发明的实施例,实施例7为对照实施例,分别测试实施例1-7制作的铜铋碘太阳能电池的性能参数:将AM1.5、模拟太阳光(入射光强度100mW/cm2)作为光源,用源测量单元(Keithley2400型)通过施加电压分别测试了填充因子(FF)、转换效率(PCE)、短路电流密度(Jsc)和开路电压(Voc),将吸收层置于进行海水浸泡1年,做海水侵蚀实验,观察侵蚀性和有无裂纹。
表1实施例所得电池的性能参数
从表1的结果可以看出,按照本发明所制备的吸收层制备的铜铋钛碘太阳能电池的填充因子62.35%-63.73%、转换效率10.52%-11.85%、短路电流密度20.45%-21.81%和开路电压0.82%-0.91%,均高于对照。在进行模拟海水腐蚀1年后,耐腐蚀性表现优良,无裂纹,说明本发明耐腐蚀性良好,产品性能稳定,使用时间长。
以上所述仅为本发明的较佳实施方式而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (9)
1.一种铜铋碘太阳能电池光吸收层的掺杂方法,掺杂方法如下:
S1,金属氧化物溶解于有机溶剂,得到电子传输层前驱体溶液,在紫外光照射条件下,将电子传输层前驱体液旋涂于导电玻璃上,涂布后的导电玻璃在100-150℃条件下退火0.5-1小时,制成基板;
S2,将铜盐、铋盐、碘盐、钛盐分别溶解于有机溶剂,将4种盐溶液混合并添加改性剂,搅拌混匀后制成吸收层前驱体液,将吸收层前驱体液涂于基板上,涂布前驱体液后的基板在80-100℃条件下退火0.5-1小时,制成CuBi0.5Ti0.5I4吸收层。
2.如权利要求1所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:步骤S2所述吸收层前驱体液涂布基板前,还包括:将吸收层前驱体液在转速8000-10000r/min、常温条件下离心10-30分钟,去除沉淀,留上清液。
3.如权利要求2所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:所述吸收层前驱体液经过离心去沉淀后,还包括:将吸收层前驱体溶液上清液作为靶材,倒入真空镀膜机,在真空度为100-500Pa,温度为300-500℃的条件下,在基板上镀一层厚度为400-700nm的薄膜。
4.如权利要求3所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:真空镀膜后,将基板置于TiCl4蒸汽中,在基板上形成一层厚度为50-100nm的薄膜,蒸汽沉淀后的基板在80-100℃条件下退火0.5-1小时。
5.如权利要求1所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:有机溶剂为甲苯、二丙酮醇、磷酸丙烯酯、环丁砜、三乙烯四胺、环己烯、二甲基乙酰胺中的一种或多种组合。
6.如权利要求1所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:金属氧化物选用TiO2、NiO、Al2O3、ZrO2、Cr2O3中的一种。
7.如权利要求1所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:改性剂选自环己烷-1,2-二羧酸二异壬酯、聚乙二酸丙二醇酯、环己烷-1,2-二羧酸二异辛酯、乙酰柠檬酸三丁酯、偏苯三酸三异辛酯中的一种。
8.如权利要求1所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:步骤S1所述旋涂转速为2000-3000rpm,时间为0.5-1分钟。
9.如权利要求1所述的一种铜铋碘太阳能电池光吸收层的掺杂方法,其特征在于:步骤S2所述铜盐选自碱式硫酸铜盐、甲酸铵铜盐和铵铜碳酸盐中的一种;所述铋盐选自溴化铋、磷酸铋盐和钼酸铋盐中的一种;所述碘盐选自亚硝酸碘盐和四正丁铵三碘盐中的一种;所述钛盐选自柠檬酸钠钛盐和二氨基四氯钛酸盐中的一种。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011421118.3A CN112542522A (zh) | 2020-12-08 | 2020-12-08 | 一种铜铋碘太阳能电池光吸收层的掺杂方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011421118.3A CN112542522A (zh) | 2020-12-08 | 2020-12-08 | 一种铜铋碘太阳能电池光吸收层的掺杂方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112542522A true CN112542522A (zh) | 2021-03-23 |
Family
ID=75018346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011421118.3A Pending CN112542522A (zh) | 2020-12-08 | 2020-12-08 | 一种铜铋碘太阳能电池光吸收层的掺杂方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112542522A (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN207276744U (zh) * | 2017-09-11 | 2018-04-27 | 昆明理工恒达科技股份有限公司 | 复合阳极材料与阳极板 |
CN108101381A (zh) * | 2016-11-25 | 2018-06-01 | 南京理工大学 | 一种铋基卤化物钙钛矿纳米片及其制备方法 |
CN209150137U (zh) * | 2018-07-09 | 2019-07-23 | 东泰高科装备科技(北京)有限公司 | 一种全无机无铅钙钛矿太阳能电池 |
-
2020
- 2020-12-08 CN CN202011421118.3A patent/CN112542522A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108101381A (zh) * | 2016-11-25 | 2018-06-01 | 南京理工大学 | 一种铋基卤化物钙钛矿纳米片及其制备方法 |
CN207276744U (zh) * | 2017-09-11 | 2018-04-27 | 昆明理工恒达科技股份有限公司 | 复合阳极材料与阳极板 |
CN209150137U (zh) * | 2018-07-09 | 2019-07-23 | 东泰高科装备科技(北京)有限公司 | 一种全无机无铅钙钛矿太阳能电池 |
Non-Patent Citations (1)
Title |
---|
屈南南: "《铋基化合物薄膜的室温合成及其光电性能研究》", 《郑州大学硕士学位论文》 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Raphael et al. | Optimizing photovoltaic performance in CuInS 2 and CdS quantum dot-sensitized solar cells by using an agar-based gel polymer electrolyte | |
CN103956431A (zh) | 一种溶液加工的有机-无机平面异质结太阳电池及其制备 | |
CN101901693A (zh) | 石墨烯复合染料敏化太阳能电池的光阳极及其制备方法 | |
CN107154460A (zh) | 一种全碳基钙钛矿太阳能电池及其制备工艺 | |
CN103952708A (zh) | 用于光生阴极保护的Ag/SnO2/TiO2复合膜光阳极的制备方法 | |
CN109267096A (zh) | 高效稳定的硅基光解水制氢电极及其制备方法和应用 | |
CN106128772B (zh) | 一种硫化铅量子点光伏电池的制备方法 | |
CN104377036B (zh) | 一种In2S3为缓冲层的AgInS2量子点敏化TiO2光电极的制备方法 | |
CN101866753B (zh) | 染料敏化太阳能电池光阳极表面的处理方法 | |
CN105742494A (zh) | 一种钙钛矿太阳能电池及其制备方法 | |
Khan et al. | Enhancing the efficiency of dye sensitized solar cells by using anatase and brookite mixed phases of TiO2 | |
Fan | Flexible dye-sensitized solar cells assisted with lead-free perovskite halide | |
CN104409218B (zh) | 一种用于量子点敏化太阳能电池的CuXS对电极及其制备和应用 | |
CN201708038U (zh) | 染料敏化太阳能电池 | |
CN104916714B (zh) | 以La‑TiO2为电子传输层的有机光伏电池及其制备方法 | |
Norhisamudin et al. | The efficiency effect of dye sensitized solar cell using different ratio of organic polymer doped titanium dioxide at different annealing process temperature | |
Senthil et al. | New materials for thin film solar cells | |
Ghalmi et al. | Enhancement of the capacitance properties and the photoelectrochemical performances of P3HT film by incorporation of nickel oxide nanoparticles | |
CN112542522A (zh) | 一种铜铋碘太阳能电池光吸收层的掺杂方法 | |
CN105957720A (zh) | 一种可调谐宽光谱响应的复合量子点敏化光电极的制备方法 | |
CN106847518B (zh) | 一种染料敏化太阳能电池光阳极及其制备方法 | |
CN113394343B (zh) | 一种背入射p-i-n结构钙钛矿太阳电池及其制备方法 | |
CN110061137A (zh) | 一种基于室温成膜制备氧化锡电子传输层的钙钛矿电池及其制备方法 | |
CN115064388A (zh) | 基于复合结构光阳极的染敏太阳能电池及其制法和应用 | |
Ibrayev et al. | The effect of the DSSC photoanode area based on TiO2/Ag on the conversion efficiency of solar energy into electrical energy |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210323 |