CN112538612B - Processing method of diamond cutter with coating microstructured bionic surface - Google Patents
Processing method of diamond cutter with coating microstructured bionic surface Download PDFInfo
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- CN112538612B CN112538612B CN202011301524.6A CN202011301524A CN112538612B CN 112538612 B CN112538612 B CN 112538612B CN 202011301524 A CN202011301524 A CN 202011301524A CN 112538612 B CN112538612 B CN 112538612B
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- 238000000576 coating method Methods 0.000 title claims abstract description 53
- 239000011248 coating agent Substances 0.000 title claims abstract description 51
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 41
- 239000010432 diamond Substances 0.000 title claims abstract description 41
- 239000011664 nicotinic acid Substances 0.000 title claims abstract description 9
- 238000003672 processing method Methods 0.000 title claims abstract description 5
- 210000003462 vein Anatomy 0.000 claims abstract description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 238000004381 surface treatment Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000003085 diluting agent Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 4
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003929 acidic solution Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 230000005587 bubbling Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- 230000003592 biomimetic effect Effects 0.000 claims 4
- 238000005520 cutting process Methods 0.000 abstract description 24
- 230000000694 effects Effects 0.000 abstract description 11
- 238000012546 transfer Methods 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000001050 lubricating effect Effects 0.000 abstract description 4
- 238000003754 machining Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 4
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000005299 abrasion Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Abstract
The invention discloses a processing method of a diamond cutter with a coating microstructured bionic surface, which comprises the following steps: 1. surface treatment of a hard alloy matrix; 2. depositing a diamond coating; 3. carrying out microstructuring treatment on the surface of the cutter; 4. and (3) preparing a silicon carbide coating. By adopting the technical scheme of the invention, the micro-structuring of the surface of the cutter can improve the lubricating capability of the cutter and reduce the friction of the cutter, the scraps and the workpiece surface in the machining process of the cutter, thereby reducing the cutting mechanism in the aspects of cutting force, cutting temperature, friction factors, cutter wear and the like in the cutting process. The microstructured shape is a vein stem. Research shows that the vein stem has heat transfer effect, so that the heat transfer of the cutter surface is more uniform, and the heat dissipation effect of the cutter is better. The silicon carbide coating has excellent properties of high hardness, high strength, high heat conductivity, corrosion resistance, low expansion coefficient and the like, and the cutter has higher hardness, strength, wear resistance, oxidation resistance and the like after being coated.
Description
Technical Field
The invention relates to a diamond cutter, in particular to a processing method of a diamond cutter with a coating microstructure bionic surface, and belongs to the technical field of cutter metal processing.
Background
With the development of industrial technologies in the fields of manufacturing industry and the like in China, various difficult-to-process materials such as high-silicon aluminum materials, high-wear-resistant materials and the like are required to be processed, so that the requirements on the service performance of the cutter are higher and higher, the diamond cutter is concerned with high hardness, wear resistance, high thermal conductivity and the like, however, in the prior art, the adhesiveness between a diamond coating of the diamond cutter and a hard alloy matrix is poor, and the diamond coating is easy to soften in the high-temperature high-speed cutting process, so that abrasive particles of the diamond coating fall off in the process of processing, and the cutting performance and the service life of the diamond cutter are greatly reduced.
Disclosure of Invention
The invention aims to solve the technical problems that: the method for processing the diamond cutter with the coating microstructured bionic surface is characterized in that a novel film is formed on the surface of the diamond cutter, so that the cutting performance and the service life of the diamond cutter are improved, and the problems of poor cutting performance and short service life of the diamond cutter on difficult-to-process materials are effectively solved.
The technical scheme of the invention is as follows: a method for processing a diamond cutter with a coating microstructured bionic surface, comprising the following steps: 1. surface treatment of a hard alloy matrix; 2. depositing a diamond coating; 3. carrying out microstructuring treatment on the surface of the cutter, wherein the microstructuring shape is a plurality of veins and stems, and each vein and stem comprises a strip-shaped main groove and inclined branch grooves arranged on two sides of the strip-shaped main groove; 4. and (3) preparing a silicon carbide coating.
Firstly, placing a hard alloy substrate in a sodium hydroxide alkaline solution with the concentration of 50% -80%, removing grease and tungsten carbide covered on the surface layer of the substrate, and then performing ultrasonic cleaning; and placing the cleaned substrate in a hydrochloric acid acidic solution with the concentration of 20% -40% to remove Co, and then performing ultrasonic cleaning and drying.
In the second step, a Chemical Vapor Deposition (CVD) technology is adopted, methane and hydrogen are used as reaction gases, a hot wire heating thermal chemical vapor deposition method is utilized to deposit on the surface of the hard alloy, and then a diamond coating is obtained, wherein the thickness of the diamond coating is 15-20nm.
And in the third step, the laser processing technology is adopted to perform micro-structural processing on the surface of the diamond cutter.
In the fourth step, a Chemical Vapor Deposition (CVD) technique is adopted, the precursor system is trichloromethyl carboane (MTS) +hydrogen, and the diluent gas is nitrogen.
The reaction conditions of the gas are as follows: the pressure is 0.5-1.4KPa, and the substrate temperature is 700-850 ℃.
The microstructured shape is in the shape of a vein stem, and the structural parameters are 32-35um long, 12-14um deep, 5-7um wide and 50um apart.
The preparation method of the silicon carbide coating comprises the following steps: A. cleaning the cutter by ultrasonic pure water, and placing the cutter in an oven for drying; B. MTS, hydrogen and nitrogen are respectively placed in a gas container of a CVD system gas supply device, and the reaction flow is controlled by a valve; C. starting a system, namely introducing MTS into a reaction deposition chamber through hydrogen bubbling, controlling the flow rates of carrier gas hydrogen and diluent gas nitrogen to be 1500-2400ml/min and 650-1000ml/min respectively by a valve, and controlling the reaction temperature of the system to be 850-980 ℃ and the air pressure to be 0.3-2KPa and the time to be 2-4h; D. and finally, closing the MTS valve, keeping the hydrogen and the nitrogen open, then carrying out cooling and depressurization treatment, and taking out the cutter with the coating thickness of 10-12um when the temperature and the pressure of the reaction chamber are reduced to the room temperature and the atmospheric pressure.
The beneficial effects of the invention are as follows: compared with the prior art, the technical scheme of the invention has the advantages that the micro-structuring of the surface of the cutter can improve the lubricating capability of the cutter and reduce the friction between the cutter and the surface of the chip and the workpiece in the machining process, so that the cutting mechanism in the aspects of cutting force, cutting temperature, friction factors, cutter abrasion and the like in the cutting process is reduced. The microstructure is in the shape of a leaf vein stem. Research shows that the vein stem has good heat transfer effect, so that the heat transfer of the cutter surface is more uniform, and the heat dissipation effect of the cutter is better. The silicon carbide coating has excellent properties of high hardness, high strength, high thermal conductivity, corrosion resistance, low expansion coefficient and the like. After the coating, the cutter has higher hardness, strength, wear resistance, oxidation resistance and the like, the service life and cutting efficiency of the cutter are improved, and a good use effect is achieved. Studies have shown that coated tools have a 5-7 times longer life than uncoated tools.
Drawings
FIG. 1 is a flow chart of the preparation of the present invention;
FIG. 2 is a schematic view of a cemented carbide base insert according to the present invention;
FIG. 3 is a schematic view of a diamond coating according to the present invention;
FIG. 4 is a schematic view of a microstructured surface of a tool according to the present invention;
FIG. 5 is a schematic diagram of an apparatus for CVD preparation of silicon carbide coatings according to the present invention;
fig. 6 is a schematic view of a tool coating of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings of the present specification.
Example 1: as shown in fig. 1, a method for processing a diamond cutter with a coating microstructured bionic surface comprises the following steps: 1. surface treatment of a hard alloy matrix; 2. depositing a diamond coating; 3. carrying out microstructuring treatment on the surface of the cutter, wherein the microstructuring shape is a plurality of veins and stems, and each vein and stem comprises a strip-shaped main groove and inclined branch grooves arranged on two sides of the strip-shaped main groove; 4. and (3) preparing a silicon carbide coating.
Firstly, an acid-base two-step method is adopted, namely, firstly, a hard alloy substrate is placed in a sodium hydroxide alkaline solution with the concentration of 50% -80%, grease and tungsten carbide covered on the surface layer of the substrate are removed, and then ultrasonic cleaning is carried out; and placing the cleaned substrate in a hydrochloric acid acidic solution with the concentration of 20% -40% to remove Co, and then performing ultrasonic cleaning and drying. As shown in fig. 2.
Co and carbide removal treatment is carried out on the hard alloy, and the effect is to improve the adhesion of a hard alloy matrix (such as a hard alloy blade schematic diagram in fig. 2) and a diamond cutter coating.
In the second step, a Chemical Vapor Deposition (CVD) technology is adopted, methane and hydrogen are used as reaction gases, a hot wire heating thermal chemical vapor deposition method is utilized to deposit on the surface of the hard alloy, then a diamond coating is obtained, the thickness of the coating is about 15-20nm, and the reaction conditions of the gases are as follows: the pressure is 0.5-1.4KPa, the substrate temperature is 700-850 deg.C, as shown in figure 3.
The Chemical Vapor Deposition (CVD) technology has the characteristics of simple equipment, low cost, high film forming speed, compact coating and the like, and becomes a method for carrying out surface coating treatment commonly used at present.
And thirdly, carrying out microstructuring processing on the surface of the diamond cutter by adopting a laser processing technology.
And carrying out microstructuring processing on the surface of the diamond cutter by using a laser processing technology. The micro-structuring of the surface of the cutter can improve the lubricating capability of the cutter and reduce the friction of the cutter, scraps and the surface of a workpiece in the machining process, so that the cutting force, the cutting temperature, the friction and the cutter abrasion in the cutting process are reduced, and the cutting performance and the service life of the cutter are improved. The microstructured shape is a vein stem. Research shows that the vein stem has good heat transfer effect, so that the heat transfer of the cutter surface is more uniform, and the heat dissipation effect of the cutter is better.
In order to process the vein stem shape, the laser processing equipment adopted in the process has the parameters of power of 1-18Kw, speed of 1-70m/s, frequency of 15-70Hz and scanning times of 2-5 times, and a structure parallel to the cutting edge is processed on the front cutter surface of the cutter, wherein the structural parameters are length of 32-35um, depth of 12-14um, width of 5-7um and interval of 50um, as shown in figure 4.
In the fourth step, a Chemical Vapor Deposition (CVD) technique is adopted, the precursor system is trichloromethyl carboane (MTS) +hydrogen, and the diluent gas is nitrogen.
The Chemical Vapor Deposition (CVD) method has the advantages of simple equipment, low cost, high film forming speed, low temperature, compact coating and the like, and is a method for carrying out surface coating treatment. The microstructure has certain abrasion to the diamond coating, so that the coated abrasive particles are easy to fall off when the diamond cutter is processed at high temperature, and the silicon carbide coating on the diamond surface is treated to solve the problem. The silicon carbide coating has excellent properties of high hardness, high strength, high thermal conductivity, corrosion resistance, low expansion coefficient and the like. After coating, the cutter has higher hardness, strength, wear resistance, oxidation resistance and the like in performance, and the service life and cutting efficiency of the cutter are improved.
The invention adopts a trichloromethyl carborane (MTS) +hydrogen which is easy to control and operate as a precursor system and a CVD system with nitrogen as diluent gas, wherein the system comprises a gas supply device, a reflecting deposition chamber, a temperature measuring and controlling device, a pressure controlling device and a vacuum treatment system. The gas supply device in the system provides MTS, hydrogen and nitrogen for the reaction, and the reaction deposition chamber is used for reacting gas on the substrate to obtain the coating. The temperature is measured by a temperature sensor, and the temperature control device is a thermostat. The pressure control device controls the pressure stabilization through a vacuum processing system and related valves.
MTS provides carbon and silicon for deposition, hydrogen is a reactant gas and carrier gas, and nitrogen controls the amount of gas reaction, enabling control of the parameters of deposition of the precursor system and thus control of the formation of the deposited silicon carbide coating, resulting in the desired accurate coating parameters, as shown in fig. 5 for a schematic of an apparatus for CVD preparation of silicon carbide coatings.
The preparation method of the silicon carbide coating comprises the following steps: A. cleaning the cutter by ultrasonic pure water, and placing the cutter in an oven for drying; B. MTS, hydrogen and nitrogen are respectively placed in a gas container of a CVD system gas supply device, and the reaction flow is controlled by a valve; the thermostat and the temperature sensor in the system have the functions of controlling temperature and measuring temperature respectively, and the air pressure is controlled by a vacuum system and a valve, so that the reaction condition is met. The MTS gas container is heated to about 32-35 ℃ in water bath, and the reaction deposition chamber of the system is subjected to vacuum treatment. C. Starting a system, namely introducing MTS into a reaction deposition chamber through hydrogen bubbling, controlling the flow rates of carrier gas hydrogen and diluent gas nitrogen to be 1500-2400ml/min and 650-1000ml/min respectively by a valve, and controlling the reaction temperature of the system to be 850-980 ℃ and the air pressure to be 0.3-2KPa and the time to be 2-4h; D. and finally, closing the MTS valve, keeping the hydrogen and the nitrogen open, then carrying out cooling and depressurization treatment, and taking out the cutter with the coating thickness of 10-12um when the temperature and the pressure of the reaction chamber are reduced to the room temperature and the atmospheric pressure. Finally, the schematic diagram of the coating of the cutter shown in fig. 6 is obtained.
By adopting the technical scheme of the invention, the micro-structuring of the surface of the cutter can improve the lubricating capability of the cutter and reduce the friction of the cutter, the scraps and the workpiece surface in the machining process of the cutter, thereby reducing the cutting force, the cutting temperature, the friction and the cutter abrasion in the cutting process and improving the cutting performance and the service life of the cutter. The microstructure is in the shape of a leaf vein stem. Research shows that the vein stem has good heat transfer effect, so that the heat transfer of the cutter surface is more uniform, and the heat dissipation effect of the cutter is better. The silicon carbide coating has excellent properties of high hardness, high strength, high thermal conductivity, corrosion resistance, low expansion coefficient and the like. After the coating, the cutter has higher hardness, strength, wear resistance, oxidation resistance and the like, the service life and cutting efficiency of the cutter are improved, and a good use effect is achieved.
The present invention is not described in detail in the present application, and is well known to those skilled in the art. Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered by the scope of the claims of the present invention.
Claims (6)
1. A processing method of a diamond cutter with a coating microstructured bionic surface is characterized by comprising the following steps of: the method comprises the following steps: 1. surface treatment of a hard alloy matrix; 2. depositing a diamond coating; 3. the method comprises the steps of carrying out microstructuring treatment on the surface of a cutter, wherein the microstructuring shape is a plurality of veins and stems, each vein and stem comprises a strip-shaped main groove and inclined branch grooves arranged on two sides of the strip-shaped main groove, and carrying out microstructuring treatment on the surface of the diamond cutter by adopting a laser processing technology; the leaf vein stem-shaped structure parameters are 32-35um long, 12-14um deep, 5-7um wide and 50um apart; 4. and (3) preparing a silicon carbide coating.
2. The method for processing the coated microstructured biomimetic surface diamond tool according to claim 1, wherein: in the first step, an acid-base two-step method is adopted, namely, firstly, a hard alloy substrate is placed in a sodium hydroxide alkaline solution with the concentration of 50% -80%, and then ultrasonic cleaning is carried out; and placing the cleaned substrate in a hydrochloric acid acidic solution with the concentration of 20% -40% to remove Co, and then performing ultrasonic cleaning and drying.
3. The method for processing the coated microstructured biomimetic surface diamond tool according to claim 1, wherein: in the second step, a chemical vapor deposition method technology is adopted, methane and hydrogen are used as reaction gases, a hot wire heating thermal chemical vapor deposition method is utilized to deposit on the surface of the hard alloy, and then a diamond coating is obtained, wherein the thickness of the diamond coating is 15-20nm.
4. The method for processing the coated microstructured biomimetic surface diamond tool according to claim 1, wherein: in the fourth step, a chemical vapor deposition technology is adopted, wherein the precursor system is trichloromethyl carboane+hydrogen, and the diluent gas is nitrogen.
5. A method of processing a coated microstructured biomimetic surface diamond tool according to claim 3, wherein: the reaction conditions of the gas are as follows: the pressure is 0.5-1.4KPa, and the substrate temperature is 700-850 ℃.
6. The method for processing the coated microstructured bionic surface diamond tool according to claim 4, wherein: the preparation method of the silicon carbide coating comprises the following steps: A. cleaning the cutter by ultrasonic pure water, and placing the cutter in an oven for drying; B. MTS, hydrogen and nitrogen are respectively placed in a gas container of a CVD system gas supply device, and the reaction flow is controlled by a valve; C. starting a system, namely introducing MTS into a reaction deposition chamber through hydrogen bubbling, controlling the flow rates of carrier gas hydrogen and diluent gas nitrogen to be 1500-2400ml/min and 650-1000ml/min respectively by a valve, and controlling the reaction temperature of the system to be 850-980 ℃ and the air pressure to be 0.3-2KPa and the time to be 2-4h; D. and finally, closing the MTS valve, keeping the hydrogen and the nitrogen open, then carrying out cooling and depressurization treatment, and taking out the cutter with the coating thickness of 10-12um when the temperature and the pressure of the reaction chamber are reduced to the room temperature and the atmospheric pressure.
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