CN112531051A - 一种隧道结结构及其形成方法、隧道结器件 - Google Patents
一种隧道结结构及其形成方法、隧道结器件 Download PDFInfo
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- CN112531051A CN112531051A CN202011412530.9A CN202011412530A CN112531051A CN 112531051 A CN112531051 A CN 112531051A CN 202011412530 A CN202011412530 A CN 202011412530A CN 112531051 A CN112531051 A CN 112531051A
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- 239000000758 substrate Substances 0.000 claims description 41
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 276
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
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CN202011412530.9A CN112531051B (zh) | 2020-12-04 | 2020-12-04 | 一种隧道结结构及其形成方法、隧道结器件 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114006268A (zh) * | 2022-01-04 | 2022-02-01 | 苏州长光华芯光电技术股份有限公司 | 一种多有源区半导体结构及其制备方法 |
CN114122913A (zh) * | 2022-01-29 | 2022-03-01 | 苏州长光华芯光电技术股份有限公司 | 一种高亮度高功率半导体发光器件及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103337568A (zh) * | 2013-05-22 | 2013-10-02 | 西安交通大学 | 应变超晶格隧道结紫外led外延结构及其制备方法 |
CN105977349A (zh) * | 2016-05-17 | 2016-09-28 | 东南大学 | 一种具有p-i-n隧道结的多有源区发光二极管 |
CN106653925A (zh) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | 一种两结激光电池外延层及其制备方法 |
CN110112236A (zh) * | 2019-05-21 | 2019-08-09 | 扬州乾照光电有限公司 | 一种砷化镓多结太阳电池及制作方法 |
CN111628021A (zh) * | 2020-06-03 | 2020-09-04 | 苏州长光华芯光电技术有限公司 | 一种半导体器件和制造方法 |
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2020
- 2020-12-04 CN CN202011412530.9A patent/CN112531051B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103337568A (zh) * | 2013-05-22 | 2013-10-02 | 西安交通大学 | 应变超晶格隧道结紫外led外延结构及其制备方法 |
CN105977349A (zh) * | 2016-05-17 | 2016-09-28 | 东南大学 | 一种具有p-i-n隧道结的多有源区发光二极管 |
CN106653925A (zh) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | 一种两结激光电池外延层及其制备方法 |
CN110112236A (zh) * | 2019-05-21 | 2019-08-09 | 扬州乾照光电有限公司 | 一种砷化镓多结太阳电池及制作方法 |
CN111628021A (zh) * | 2020-06-03 | 2020-09-04 | 苏州长光华芯光电技术有限公司 | 一种半导体器件和制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114006268A (zh) * | 2022-01-04 | 2022-02-01 | 苏州长光华芯光电技术股份有限公司 | 一种多有源区半导体结构及其制备方法 |
WO2023130711A1 (zh) * | 2022-01-04 | 2023-07-13 | 苏州长光华芯光电技术股份有限公司 | 一种多有源区半导体结构及其制备方法 |
CN114122913A (zh) * | 2022-01-29 | 2022-03-01 | 苏州长光华芯光电技术股份有限公司 | 一种高亮度高功率半导体发光器件及其制备方法 |
CN114122913B (zh) * | 2022-01-29 | 2022-04-19 | 苏州长光华芯光电技术股份有限公司 | 一种高亮度高功率半导体发光器件及其制备方法 |
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Address after: No. 56 Lijiang Road, High tech Zone, Suzhou City, Jiangsu Province, 215000 Applicant after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Applicant after: SUZHOU EVERBRIGHT SEMICONDUCTOR LASER INNOVATION RESEARCH INSTITUTE Co.,Ltd. Address before: 215000 No. 2 Workshop-1-102, No. 2 Workshop-2-203, Industrial Workshop-A, 189 Kunlunshan Road, Suzhou High-tech Zone, Jiangsu Province Applicant before: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Applicant before: SUZHOU EVERBRIGHT SEMICONDUCTOR LASER INNOVATION RESEARCH INSTITUTE Co.,Ltd. |
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