CN112530921B - Light emitting diode display device and method of manufacturing the same - Google Patents
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Abstract
发光二极管显示装置包括背板、第一发光二极管元件及第二发光二极管元件。背板具有第一接垫组及第二接垫组。第一接垫组的多个接垫具有分别重叠于第一发光二极管元件的多个电极的多个第一连接区。第一拟直线通过多个第一连接区的多个几何中心。第二拟直线通过第一发光二极管元件的多个电极的多个几何中心。第一拟直线与第二拟直线具有第一夹角θ1。第二接垫组的多个接垫具有分别重叠于第二发光二极管元件的多个电极的多个第二连接区。第三拟直线通过多个第二连接区的多个几何中心。第四拟直线通过第二发光二极管元件的多个电极的多个几何中心。第三拟直线与第四拟直线具有与第一夹角θ1不同的第二夹角θ2。上述发光二极管显示装置的制造方法也被提出。
The light emitting diode display device includes a back panel, a first light emitting diode element and a second light emitting diode element. The backplane has a first pad set and a second pad set. The plurality of pads of the first pad group have a plurality of first connection areas respectively overlapping with the plurality of electrodes of the first LED element. The first quasi-line passes through the multiple geometric centers of the multiple first connecting regions. The second pseudo-line passes through the plurality of geometric centers of the plurality of electrodes of the first LED element. The first pseudo-line and the second pseudo-line have a first angle θ1. The plurality of pads of the second pad group have a plurality of second connection areas respectively overlapping the plurality of electrodes of the second light emitting diode element. The third pseudo-line passes through the plurality of geometric centers of the plurality of second connecting regions. The fourth pseudo-line passes through the plurality of geometric centers of the plurality of electrodes of the second LED element. The third pseudo-line and the fourth pseudo-line have a second included angle θ2 different from the first included angle θ1. A method for manufacturing the above light-emitting diode display device is also proposed.
Description
技术领域technical field
本发明是有关于一种发光二极管显示装置及其制造方法。The invention relates to a light emitting diode display device and a manufacturing method thereof.
背景技术Background technique
微型发光二极管(μLED)显示器具有省电、可靠度佳与可进行无边框设计等优点,因此被视为极具潜力的显示技术。巨量转置(mass transfer)是微型发光二极管显示器的制程技术中最具挑战性的一项。如何在短时间内进行快速、准确与高良率的微型发光二极管晶片转置为制造商所共同面临的课题。The micro light emitting diode (μLED) display has the advantages of power saving, high reliability and frameless design, so it is regarded as a display technology with great potential. Mass transfer is the most challenging process technology for micro-LED displays. How to perform fast, accurate and high-yield micro-LED chip transposition in a short period of time is a common problem faced by manufacturers.
巨量转置技术最大的问题在于转置良率(transfer yield)的提升。以目前的技术而言,转置良率尚不高。因此,在完成首次的转置动作后,还需进行修补动作。一般而言,在微型发光二极管显示器的背板上,除了设有供首次转置的微型发光二极管摆放的接垫外,基于修补的需求,还设有额外的修补接垫,以供与修补用的微型发光二极管电性连接。然而,额外设置的修补接垫需占用微型发光二极管的布局面积,不利于微型发光二极管器的解析度提升。The biggest problem with massive transposition technology is the improvement of transfer yield. With the current technology, the transposition yield rate is not high. Therefore, after the first transposition operation is completed, a repair operation is required. Generally speaking, in addition to the pads for placing the first transposed micro-LEDs on the backplane of the micro-LED display, additional repair pads are also provided for repairing. The micro light emitting diodes are electrically connected. However, the additional repair pads need to occupy the layout area of the micro-LEDs, which is not conducive to the improvement of the resolution of the micro-LEDs.
发明内容Contents of the invention
本发明提供一种发光二极管显示装置,性能佳。The invention provides a light emitting diode display device with good performance.
本发明提供一种发光二极管显示装置的制造方法,能制造出性能佳的发光二极管显示装置。The invention provides a method for manufacturing a light-emitting diode display device, which can manufacture a light-emitting diode display device with good performance.
本发明的一种发光二极管显示装置,包括背板、第一发光二极管元件及第二发光二极管元件。背板具有第一接垫组及第二接垫组。第一发光二极管元件的多个电极分别电性连接至第一接垫组的多个接垫。第一接垫组的多个接垫分别具有多个第一连接区。多个第一连接区分别重叠于第一发光二极管元件的多个电极。第一拟直线通过多个第一连接区的多个几何中心。第二拟直线通过第一发光二极管元件的多个电极的多个几何中心。第一拟直线与第二拟直线具有第一夹角θ1。第二发光二极管元件的多个电极分别电性连接至第二接垫组的多个接垫。第二接垫组的多个接垫分别具有多个第二连接区。多个第二连接区分别重叠于第二发光二极管元件的多个电极。第三拟直线通过多个第二连接区的多个几何中心。第四拟直线通过第二发光二极管元件的多个电极的多个几何中心。第三拟直线与第四拟直线具有第二夹角θ2。第一夹角θ1与第二夹角θ2不同。A light emitting diode display device of the present invention includes a back plate, a first light emitting diode element and a second light emitting diode element. The backplane has a first pad set and a second pad set. The plurality of electrodes of the first LED element are respectively electrically connected to the plurality of pads of the first pad group. The plurality of pads of the first pad group respectively have a plurality of first connection regions. The plurality of first connecting regions are respectively overlapped with the plurality of electrodes of the first LED element. The first quasi-line passes through the multiple geometric centers of the multiple first connecting regions. The second pseudo-line passes through the plurality of geometric centers of the plurality of electrodes of the first LED element. The first pseudo-line and the second pseudo-line have a first angle θ1. The plurality of electrodes of the second LED element are respectively electrically connected to the plurality of pads of the second pad group. The plurality of pads of the second pad group respectively have a plurality of second connection regions. The plurality of second connecting regions overlap the plurality of electrodes of the second LED element respectively. The third pseudo-line passes through the plurality of geometric centers of the plurality of second connecting regions. The fourth pseudo-line passes through the plurality of geometric centers of the plurality of electrodes of the second LED element. The third pseudo-line and the fourth pseudo-line have a second included angle θ2. The first included angle θ1 is different from the second included angle θ2.
一种发光二极管显示装置的制造方法,包括下列步骤:令多个第一发光二极管元件分别转置于背板的多个第一接垫组上,其中每一第一接垫组的多个接垫分别具有多个第一连接区,多个第一连接区分别重叠于一第一发光二极管元件的多个电极,一第一拟直线通过多个第一连接区的多个几何中心,一第二拟直线通过第一发光二极管元件的多个电极的多个几何中心,且第一拟直线与第二拟直线具有第一夹角θ1;移除一第一接垫组上的一第一发光二极管元件,并移除第一接垫组的一部分,以形成一第二接垫组;在移除第一接垫组上的第一发光二极管元件之后,令一第二发光二极管元件转置于第二接垫组上,其中第二接垫组的多个接垫分别具有多个第二连接区,多个第二连接区分别重叠于第二发光二极管元件的多个电极,一第三拟直线通过多个第二连接区的多个几何中心,一第四拟直线通过第二发光二极管元件的多个电极的多个几何中心,第三拟直线与第四拟直线具有第二夹角θ2,且第一夹角θ1与第二夹角θ2不同。A method for manufacturing a light-emitting diode display device, comprising the following steps: allowing a plurality of first light-emitting diode elements to be respectively transferred on a plurality of first pad groups of a backplane, wherein a plurality of contact pads of each first pad group The pads respectively have a plurality of first connection regions, and the plurality of first connection regions respectively overlap with a plurality of electrodes of a first light-emitting diode element, a first quasi-line passes through a plurality of geometric centers of the plurality of first connection regions, and a first Two pseudo-lines pass through multiple geometric centers of multiple electrodes of the first light-emitting diode element, and the first pseudo-line and the second pseudo-line have a first angle θ1; remove a first light emission on a first pad group diode element, and remove a part of the first pad group to form a second pad group; after removing the first light emitting diode element on the first pad group, make a second light emitting diode element transfer to On the second pad group, wherein the plurality of pads of the second pad group respectively have a plurality of second connection areas, and the plurality of second connection areas respectively overlap with the plurality of electrodes of the second light emitting diode element, a third dummy A straight line passes through multiple geometric centers of multiple second connecting regions, a fourth pseudo-line passes through multiple geometric centers of multiple electrodes of the second LED element, and the third pseudo-line and the fourth pseudo-line have a second included angle θ2 , and the first included angle θ1 is different from the second included angle θ2.
在本发明的一实施例中,|θ1-θ2|≤30°或|θ1-θ2|≥57°。In an embodiment of the present invention, |θ1-θ2|≤30° or |θ1-θ2|≥57°.
在本发明的一实施例中,上述的第一夹角θ1大于第二夹角θ2,且第二接垫组的多个接垫在一方向上的间距大于第一接垫组的多个接垫在所述方向上的间距。In an embodiment of the present invention, the above-mentioned first included angle θ1 is greater than the second included angle θ2, and the distance between the plurality of pads in the second pad group in one direction is greater than that of the plurality of pads in the first pad group Spacing in that direction.
在本发明的一实施例中,上述的第一夹角θ1大于第二夹角θ2,第二发光二极管元件的多个电极在第四拟直线上的距离大于第一发光二极管元件的多个电极在第二拟直线上的距离。In an embodiment of the present invention, the first included angle θ1 is greater than the second included angle θ2, and the distance between the plurality of electrodes of the second light-emitting diode element on the fourth pseudo-line is greater than that of the plurality of electrodes of the first light-emitting diode element The distance on the second quasi-line.
在本发明的一实施例中,上述的第一接垫组的接垫具有第一部及第二部,第一部的延伸方向与第二部的延伸方向交错,且第一发光二极管元件的一电极设置于第二部上。In an embodiment of the present invention, the above-mentioned pads of the first pad group have a first portion and a second portion, the extension direction of the first portion is intersected with the extension direction of the second portion, and the first light emitting diode element An electrode is arranged on the second part.
在本发明的一实施例中,上述的第二部的延伸方向与第二拟直线夹有一锐角。In an embodiment of the present invention, the extension direction of the above-mentioned second portion forms an acute angle with the second pseudo-line.
在本发明的一实施例中,上述的第一部的延伸方向与第二拟直线夹有一锐角。In an embodiment of the present invention, the extension direction of the above-mentioned first portion forms an acute angle with the second pseudo-line.
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
附图说明Description of drawings
图1为本发明一实施例的发光二极管显示装置的制造方法的流程示意图。FIG. 1 is a schematic flowchart of a method for manufacturing a light emitting diode display device according to an embodiment of the present invention.
图2A至图2D为本发明一实施例的发光二极管显示装置10的制造方法的透视示意图。2A to 2D are schematic perspective views of a method of manufacturing the
图3A至图3D为本发明另一实施例的发光二极管显示装置10A的制造方法的透视示意图。3A to 3D are schematic perspective views of a method of manufacturing an
图4A至图4D为本发明又一实施例的发光二极管显示装置10B的制造方法的透视示意图。4A to 4D are schematic perspective views of a method of manufacturing an
其中,附图标记Among them, reference signs
10、10A、10B:发光二极管显示装置10, 10A, 10B: LED display device
100:背板100: Backplane
110:第一接垫组110: The first pad group
110a、110b、112a、112b:接垫110a, 110b, 112a, 112b: Pads
110a-1、110b-1:第一连接区110a-1, 110b-1: first connection area
112:第二接垫组112: Second pad group
112a-1、112b-1:第二连接区112a-1, 112b-1: second connection area
114:第一部114:
116:第二部116: Part Two
A、B、C、D:几何中心A, B, C, D: geometric center
d1、d2:排列方向d1, d2: arrangement direction
E1、E2:电极E1, E2: electrodes
LED1:第一发光二极管元件LED1: the first light-emitting diode element
LED2:第二发光二极管元件LED2: Second light-emitting diode element
L1:第一拟直线L1: first quasi-line
L2:第二拟直线L2: second quasi-line
L3:第三拟直线L3: third quasi-line
L4:第四拟直线L4: Fourth quasi-line
LS:雷射LS: laser
S10、S11、S20、S30、S31、S40、S50、S51、S52:步骤S10, S11, S20, S30, S31, S40, S50, S51, S52: steps
s、s’:距离s, s': distance
p、p’:间距p, p': spacing
W:基板W: Substrate
x、y:延伸方向x, y: extension direction
θ1:第一夹角θ1: the first included angle
θ2:第二夹角θ2: second included angle
α、β:锐角α, β: acute angle
γ:角度γ: angle
具体实施方式Detailed ways
现将详细地参考本发明的示范性实施例,示范性实施例的实例说明于附图中。只要有可能,相同元件符号在图式和描述中用来表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.
应当理解,当诸如层、膜、区域或基板的元件被称为在另一元件“上”或“连接到”另一元件时,其可以直接在另一元件上或与另一元件连接,或者中间元件可以也存在。相反,当元件被称为“直接在另一元件上”或“直接连接到”另一元件时,不存在中间元件。如本文所使用的,“连接”可以指物理及/或电性连接。再者,“电性连接”或“耦合”可以是二元件间存在其它元件。It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.
本文使用的“约”、“近似”、或“实质上”包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值,考虑到所讨论的测量和与测量相关的误差的特定数量(即,测量系统的限制)。例如,“约”可以表示在所述值的一个或多个标准偏差内,或±30%、±20%、±10%、±5%内。再者,本文使用的“约”、“近似”或“实质上”可依光学性质、蚀刻性质或其它性质,来选择较可接受的偏差范围或标准偏差,而可不用一个标准偏差适用全部性质。As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the relative A specific amount of measurement-related error (ie, a limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Moreover, "about", "approximately" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and may not use one standard deviation to apply to all properties .
除非另有定义,本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是,诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义,并且将不被解释为理想化的或过度正式的意义,除非本文中明确地这样定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.
图1为本发明一实施例的发光二极管显示装置的制造方法的流程示意图。FIG. 1 is a schematic flowchart of a method for manufacturing a light emitting diode display device according to an embodiment of the present invention.
图2A至图2D为本发明一实施例的发光二极管显示装置10的制造方法的透视示意图。2A to 2D are schematic perspective views of a method of manufacturing the
以下配合图1及图2A至图2D举例说明本发明一实施例的发光二极管显示装置10的制造方法及其构造。The manufacturing method and structure of the light emitting
请参照图1及图2A,在本实施例中,首先,可先进行步骤S10:检测基板W上的多个第一发光二极管元件LED1。举例而言,在本实施例中,基板W可以是第一发光二极管元件LED1的磊晶晶圆,但本发明不以此为限。Referring to FIG. 1 and FIG. 2A , in this embodiment, firstly, step S10 may be performed: detecting a plurality of first light emitting diode elements LED1 on the substrate W. Referring to FIG. For example, in this embodiment, the substrate W may be an epitaxial wafer of the first light emitting diode element LED1, but the invention is not limited thereto.
于步骤S10,若发现基板W上的任一第一发光二极管元件LED1失效,则进行步骤S11:自基板W上移除失效的第一发光二极管元件LED1。In step S10 , if any of the first light emitting diode elements LED1 on the substrate W is found to be invalid, proceed to step S11 : remove the failed first light emitting diode elements LED1 from the substrate W.
于步骤S10,若判断基板W上的多个第一发光二极管元件LED1正常,则进行步骤S20:利用提取元件(未绘示)自基板W上提取多个第一发光二极管元件LED1。举例而言,在本实施例中,可以选择性地利用一弹性转置头提取多个第一发光二极管元件LED1。然而,本发明不限于此,在其它实施例中,也可使用静电转置头、真空吸引转置头或其它设备提取多个第一发光二极管元件LED1。In step S10 , if it is determined that the plurality of first light emitting diode elements LED1 on the substrate W are normal, proceed to step S20 : extracting the plurality of first light emitting diode elements LED1 from the substrate W by using an extraction device (not shown). For example, in this embodiment, a plurality of first light emitting diode elements LED1 can be selectively extracted by using an elastic transposition head. However, the present invention is not limited thereto, and in other embodiments, an electrostatic transposition head, a vacuum suction transposition head or other devices may also be used to extract a plurality of first light emitting diode elements LED1.
在本实施例中,完成步骤S10后,接着,可进行步骤S30:检测提取元件上的多个第一发光二极管元件LED1。In this embodiment, after step S10 is completed, step S30 may be performed: detecting a plurality of first light emitting diode elements LED1 on the extraction element.
于步骤S30,若发现提取元件上的任一第一发光二极管元件LED1失效,则进行步骤S31:自提取元件上移除失效的第一发光二极管元件LED1。In step S30, if it is found that any first LED1 on the extractor is invalid, proceed to step S31: remove the failed first LED1 from the extractor.
于步骤S30,若判断提取元件上的多个第一发光二极管元件LED1正常,则进行步骤S40:令多个第一发光二极管元件LED1与背板100的多个第一接垫组110呈特定角度γ,以将多个第一发光二极管元件LED1转置于背板100的多个第一接垫组110上。In step S30, if it is judged that the plurality of first light-emitting diode elements LED1 on the extraction element is normal, proceed to step S40: make the plurality of first light-emitting diode elements LED1 and the plurality of
请参照图2A,举例而言,在本实施例中,可使基板W上多个第一发光二极管元件LED1的多个电极E1、E2的排列方向d1与第一接垫组110的多个接垫110a、110b的排列方向d2夹有特定角度γ;之后,在维持所述特定角度γ的情况下,利用一提取元件将多个第一发光二极管元件LED1分别转置于背板100的多个第一接垫组110上,以使多个第一发光二极管元件LED1分别与多个第一接垫组110电性连接。Please refer to FIG. 2A , for example, in this embodiment, the arrangement direction d1 of the plurality of electrodes E1 and E2 of the plurality of first light emitting diode elements LED1 on the substrate W can be aligned with the plurality of contacts of the
在多个第一发光二极管元件LED1分别转置于背板100的多个第一接垫组110后,第一接垫组110的多个接垫110a、110b分别具有多个第一连接区110a-1、110b-1,多个第一连接区110a-1、110b-1分别重叠于第一发光二极管元件LED1的多个电极E1、E2,一第一拟直线L1通过多个第一连接区110a-1、110b-1的多个几何中心A,一第二拟直线L2通过第一发光二极管元件LED1的多个电极E1、E2的多个几何中心B,第一拟直线L1与第二拟直线L2具有一第一夹角θ1,且θ1>0°。也就是说,第一拟直线L1与第二拟直线L2不相平行。After the plurality of first light emitting diode elements LED1 are respectively transferred to the plurality of
请参照图1及图2A,完成步骤S40后(即转置完多个第一发光二极管元件LED1后),接着,进行步骤S50:检测背板100上的多个第一发光二极管元件LED1。Referring to FIG. 1 and FIG. 2A , after step S40 is completed (that is, after transposing a plurality of first light emitting diode elements LED1 ), then step S50 is performed: detecting a plurality of first light emitting diode elements LED1 on the
于步骤S50,若背板100上的多个第一发光二极管元件LED1正常,则完成发光二极管显示装置10。于步骤S50,若发现背板100上的任一第一发光二极管元件LED1失效,则进行修补动作(即依序进行步骤S51、S52)。In step S50 , if the plurality of first LED elements LED1 on the
请参照图1、图2B及图2C,具体而言,先进行步骤S51:自背板100的第一接垫组110上移除失效的第一发光二极管元件LED1,并移除第一接垫组110的一部分以形成第二接垫组112。举例而言,在本实施例中,可利用雷射LS移除失效的第一发光二极管元件LED1。然而,本发明不限于此,在其它实施例中,也可使用其它方式(例如:机械方式)移除之。Please refer to FIG. 1 , FIG. 2B and FIG. 2C , specifically, step S51 is performed first: remove the failed first light-emitting diode element LED1 from the
请参照图2B及图2C,在移除失效的第一发光二极管元件LED1的过程中,原本与失效的第一发光二极管元件LED1电性连接的第一接垫组110的一部分(即多个接垫110a、110b的多个部分)也会随着失效的第一发光二极管元件LED1一并被移除,而保留在背板100上的第一接垫组110的一部分(即多个接垫110a、110b的多个残留部分)则形成第二接垫组112的多个接垫112a、112b。2B and FIG. 2C, in the process of removing the failed first light emitting diode element LED1, a part of the first pad group 110 (that is, a plurality of contacts) that was originally electrically connected to the failed first light emitting diode element LED1 A plurality of parts of the
如图2C所示,第二接垫组112的多个接垫112a、112b在一方向(例如:排列方向d2)上的间距p’大于第一接垫组110的多个接垫110a、110b在所述方向(例如:排列方向d2)上的间距p。As shown in FIG. 2C , the pitch p' of the plurality of
请参照图1及图2D,完成步骤S51后,接着,进行步骤S52:令第二发光二极管元件LED2与背板100的第二接垫组112在同一方向上排列,以将第二发光二极管元件LED2转置于背板100的第二接垫组112上。举例而言,在本实施例中,可使基板W上的第二发光二极管元件LED2的多个电极E1、E2的排列方向d2与第二接垫组112的多个接垫112a、112b的排列方向d2一致;然后,在维持第二发光二极管元件LED2的多个电极E1、E2的排列方向d2与第二接垫组112的多个接垫112a、112b的排列方向d2一致的情况下,利用一提取元件将第二发光二极管元件LED2转置于背板100的第二接垫组112上,以使第二发光二极管元件LED2与第二接垫组112电性连接。于此,便完成修补动作,并形成发光二极管显示装置10。Please refer to FIG. 1 and FIG. 2D, after step S51 is completed, then proceed to step S52: arrange the second light emitting diode element LED2 and the
值得一提的是,通过上述发光二极管显示装置10的制造方法,当失效的第一发光二极管元件LED1被移除且第一接垫组110的一部分随之被移除时,第一接垫组110的另一部分仍会被保留在背板100上且具有足够面积。因此,在原本设置失效的第一发光二极管元件LED1的地方,仍可设置修补用的第二发光二极管元件LED2。如此一来,发光二极管显示装置10的背板100便不需于它处设置额外的修补接垫,有助于缩小发光二极管显示装置10的画素尺寸、提升解析度。It is worth mentioning that, through the above-mentioned manufacturing method of the light emitting
请参照图2D,发光二极管显示装置10包括背板100、第一发光二极管元件LED1及第二发光二极管元件LED2。Referring to FIG. 2D , the light emitting
背板100具有第一接垫组110及第二接垫组112。第一接垫组110包括多个接垫110a、110b。第二接垫组112包括多个接垫112a、112b。The
在本实施例中,背板100具有多个子画素驱动电路(未绘示),其中每一子画素驱动电路包括一数据线、一扫描线、一电源线、一共通线、一第一电晶体、一第二电晶体及一电容,第一电晶体的第一端电性连接至数据线,第一电晶体的控制端电性连接至扫描线,第一电晶体的第二端电性连接至第二电晶体的控制端,第二电晶体的第一端电性连接至电源线,电容电性连接于第一电晶体的第二端及第二电晶体的第一端。In this embodiment, the
背板100的多个子画素驱动电路包括一第一子画素驱动电路及一第二子画素驱动电路;第一接垫组110的一接垫110a电性连接至第一子画素驱动电路的第二电晶体的第二端,且第一接垫组110的另一接垫110b电性连接至第一子画素驱动电路的共通线;第二接垫组112的一接垫112a电性连接至第二子画素驱动电路的第二电晶体的第二端,且第二接垫组112的另一接垫112b电性连接至第二子画素驱动电路的共通线。The multiple sub-pixel driving circuits of the
举例而言,在本实施例中,第一子画素驱动电路的第一电晶体的控制端与第二子画素驱动电路的第一电晶体的控制端可选择性地电性连接至同一条扫描线,而第一接垫组110及第二接垫组112可以是发光二极管显示装置10的同一画素的多个接垫组,但本发明不以此为限。For example, in this embodiment, the control terminal of the first transistor of the first sub-pixel driving circuit and the control terminal of the first transistor of the second sub-pixel driving circuit can be selectively electrically connected to the same scanning line. lines, and the
第一发光二极管元件LED1的多个电极E1、E2分别电性连接至第一接垫组110的多个接垫110a、110b。第一接垫组110的多个接垫110a、110b分别具有多个第一连接区110a-1、110b-1。多个第一连接区110a-1、110b-1分别重叠于第一发光二极管元件LED1的多个电极E1、E2。第一拟直线L1通过多个第一连接区110a-1、110b-1的多个几何中心A。第二拟直线L2通过第一发光二极管元件LED1的多个电极E1、E2的多个几何中心B。第一拟直线L1与第二拟直线L2具有第一夹角θ1。The plurality of electrodes E1 , E2 of the first light emitting diode element LED1 are electrically connected to the plurality of
第二发光二极管元件LED2的多个电极E1、E2分别电性连接至第二接垫组112的多个接垫112a、112b。第二接垫组112的多个接垫112a、112b分别具有多个第二连接区112a-1、112b-1。多个第二连接区112a-1、112b-1分别重叠于第二发光二极管元件LED2的多个电极E1、E2。第三拟直线L3通过多个第二连接区112a-1、112b-1的多个几何中心C。第四拟直线L4通过第二发光二极管元件LED2的多个电极E1、E2的多个几何中心D。第三拟直线L3与第四拟直线L4具有第二夹角θ2。在本实施例中,θ2实质上为0°,而未标示θ2。The plurality of electrodes E1 , E2 of the second light emitting diode element LED2 are electrically connected to the plurality of
值得注意的是,第一拟直线L1与第二拟直线L2的第一夹角θ1和第三拟直线L3与第四拟直线L4的第二夹角θ2不同。举例而言,在本实施例中,第一夹角θ1大于第二夹角θ2,|θ1-θ2|≤30°或|θ1-θ2|≥57°。It should be noted that the first angle θ1 between the first pseudo-line L1 and the second pseudo-line L2 is different from the second angle θ2 between the third pseudo-line L3 and the fourth pseudo-line L4. For example, in this embodiment, the first included angle θ1 is greater than the second included angle θ2, |θ1-θ2|≤30° or |θ1-θ2|≥57°.
在此必须说明的是,下述实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例,下述实施例不再重述。It must be noted here that the following embodiments use the component numbers and part of the content of the previous embodiments, wherein the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of omitted parts, reference may be made to the aforementioned embodiments, and the following embodiments will not be repeated.
图3A至图3D为本发明另一实施例的发光二极管显示装置10A的制造方法的透视示意图。3A to 3D are schematic perspective views of a method of manufacturing an
图3A至图3D的发光二极管显示装置10A及其制造方法与图2A至图2D的发光二极管显示装置10及其制造方法类似,两者主要的差异在于:发光二极管显示装置10A的接垫110a的形状与发光二极管显示装置10的接垫110a的形状不同。The
具体而言,在图3A至图3D的实施例中,第一接垫组110的一接垫110a除了具有第一部114外还具有第二部116,其中第一部114的一延伸方向x与第二部116的一延伸方向y交错。举例而言,在本实施例中,第一部114的延伸方向x与第二部116的延伸方向y实质上可垂直,第一部114与第二部116可连接成一T字型的导电图案,但本发明不以此为限。Specifically, in the embodiment shown in FIG. 3A to FIG. 3D , a
请参照图3A,在本实施例中,将第一发光二极管元件LED1转置于背板100上时,第一发光二极管元件LED1的电极E1会设置于接垫110a的第二部116上。接垫110a的第二部116的延伸方向y与第二拟直线L2夹有一锐角α。接垫110a的第一部114的延伸方向x与第二拟直线L2夹有一锐角β。Referring to FIG. 3A , in this embodiment, when the first light emitting diode element LED1 is placed on the
请参照图3B、图3C及图3D,移除失效的第一发光二极管元件LED1时,接垫110a的第二部116的一大部分会随着失效的第一发光二极管元件LED1被移除,但接垫110a的第一部114的大部分面积会被保留。亦即,由残留在背板100上的第一接垫组110的部分接垫110a所形成的第二接垫组112的接垫112a的面积较大,而有助于修补用的第二发光二极管元件LED2与第二接垫组112电性连接。Referring to FIG. 3B, FIG. 3C and FIG. 3D, when removing the failed first LED element LED1, a large part of the
图4A至图4D为本发明又一实施例的发光二极管显示装置10B的制造方法的透视示意图。4A to 4D are schematic perspective views of a method of manufacturing an
图4A至图4D的发光二极管显示装置10B及其制造方法与图2A至图2D的发光二极管显示装置10及其制造方法类似,两者主要的差异在于:在图4A至图4D的实施例中,修补用的第二发光二极管元件LED2的尺寸大于原本设置于背板100上的第一发光二极管元件LED1的尺寸。The light-emitting
请参照图4D,第一发光二极管元件LED1的多个电极E1、E2分别电性连接至第一接垫组110的多个接垫110a、110b。第一接垫组110的多个接垫110a、110b分别具有多个第一连接区110a-1、110b-1。多个第一连接区110a-1、110b-1分别重叠于第一发光二极管元件LED1的多个电极E1、E2。第一拟直线L1通过多个第一连接区110a-1、110b-1的多个几何中心A。第二拟直线L2通过第一发光二极管元件LED1的多个电极E1、E2的多个几何中心B。第一拟直线L1与第二拟直线L2具有第一夹角θ1。Referring to FIG. 4D , the plurality of electrodes E1 , E2 of the first light emitting diode element LED1 are electrically connected to the plurality of
第二发光二极管元件LED2的多个电极E1、E2分别电性连接至第二接垫组112的多个接垫112a、112b。第二接垫组112的多个接垫112a、112b分别具有多个第二连接区112a-1、112b-1。多个第二连接区112a-1、112b-1分别重叠于第二发光二极管元件LED2的多个电极E1、E2。第三拟直线L3通过多个第二连接区112a-1、112b-1的多个几何中心C。第四拟直线L4通过第二发光二极管元件LED2的多个电极E1、E2的多个几何中心D。第三拟直线L3与第四拟直线L4具有第二夹角θ2。在本实施例中,θ2实质上为0°,而未标示θ2。第一夹角θ1与第二夹角θ2不同。在本实施例中,第一夹角θ1大于第二夹角θ2。The plurality of electrodes E1 , E2 of the second light emitting diode element LED2 are electrically connected to the plurality of
与图2A至图2D的实施例不同的是,修补用的第二发光二极管元件LED2的尺寸大于原本设置于背板100上的第一发光二极管元件LED1的尺寸,而第二发光二极管元件LED2的多个电极E1、E2在第四拟直线L4上的距离s’大于第一发光二极管元件LED1的多个电极E1、E1在第二拟直线L2上的距离s。距离s’是指第二发光二极管元件LED2的多个电极E1、E2的多个几何中心D的距离。距离s是指第一发光二极管元件LED1的多个电极E1、E2的多个几何中心B的距离。2A to 2D, the size of the repaired second light emitting diode element LED2 is larger than the size of the first light emitting diode element LED1 originally arranged on the
第二接垫组112的多个接垫112a、112b的间距p’较第一接垫组110的多个接垫110a、110b的间距p’大,利用其多个电极E1、E2的距离s’较大的的第二发光二极管元件LED2进行修补,有助于提升第二发光二极管元件LED2与第二接垫组112的接合良率。The pitch p' of the plurality of
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101093295A (en) * | 2006-06-22 | 2007-12-26 | 中华映管股份有限公司 | Active element array substrate and repair method thereof |
CN108615741A (en) * | 2018-04-19 | 2018-10-02 | 友达光电股份有限公司 | Light emitting device and method for manufacturing the same |
CN109065598A (en) * | 2018-05-31 | 2018-12-21 | 友达光电股份有限公司 | Display device |
CN109801936A (en) * | 2017-11-17 | 2019-05-24 | 英属开曼群岛商镎创科技股份有限公司 | Display panel and its restorative procedure |
CN111048033A (en) * | 2019-06-04 | 2020-04-21 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI378574B (en) * | 2008-09-25 | 2012-12-01 | Delta Electronics Inc | Light emitting diode chip |
TW201434179A (en) * | 2013-02-26 | 2014-09-01 | Lextar Electronics Corp | Light-emitting device and method for bonding light-emitting diode thereof |
KR101427593B1 (en) * | 2013-04-26 | 2014-08-07 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
TWI548124B (en) * | 2013-05-27 | 2016-09-01 | 崴發控股有限公司 | Flip chip light emitting device and package structure thereof |
CN105023987B (en) * | 2014-04-23 | 2018-01-09 | 光宝光电(常州)有限公司 | LED load bearing seats and its manufacture method |
CN104269431B (en) * | 2014-09-29 | 2017-03-01 | 京东方科技集团股份有限公司 | A kind of organic elctroluminescent device, its driving method and display device |
TWI657597B (en) * | 2015-03-18 | 2019-04-21 | 新世紀光電股份有限公司 | Edge lighting light emitting diode structure and method of manufacturing the same |
US9837473B2 (en) * | 2015-04-29 | 2017-12-05 | Lg Display Co., Ltd. | Organic light emitting diode display |
TWI661574B (en) * | 2018-06-06 | 2019-06-01 | 友達光電股份有限公司 | Micro light emitting diode display micro light emitting diode and manufacturing methods thereof |
EP3637472B1 (en) * | 2018-10-08 | 2025-07-02 | Samsung Electronics Co., Ltd. | Organic light emitting diode display panels and display devices including the same |
TWI668856B (en) * | 2018-12-12 | 2019-08-11 | 友達光電股份有限公司 | Light emitting diode panel |
-
2020
- 2020-04-28 TW TW109114115A patent/TWI723855B/en active
- 2020-11-06 CN CN202011232413.4A patent/CN112530921B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101093295A (en) * | 2006-06-22 | 2007-12-26 | 中华映管股份有限公司 | Active element array substrate and repair method thereof |
CN109801936A (en) * | 2017-11-17 | 2019-05-24 | 英属开曼群岛商镎创科技股份有限公司 | Display panel and its restorative procedure |
CN108615741A (en) * | 2018-04-19 | 2018-10-02 | 友达光电股份有限公司 | Light emitting device and method for manufacturing the same |
CN109065598A (en) * | 2018-05-31 | 2018-12-21 | 友达光电股份有限公司 | Display device |
CN111048033A (en) * | 2019-06-04 | 2020-04-21 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
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