CN112510405B - 一种耐高温射频连接器及其制备方法 - Google Patents
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Abstract
本发明公开了一种耐高温射频连接器及其制备方法,所述射频连接器包括金属芯柱、金属外框和陶瓷体,所述金属芯柱为T型,所述陶瓷体中心沿轴向设有供金属芯柱穿过的T型通孔,陶瓷体外表面下部设有一环形阶梯,所述金属外框为与陶瓷体外表面相配合的阶梯状;在陶瓷体T型通孔的转角处和下端沿内表面设有环形缺口,在陶瓷体的环形阶梯的转角处设有一圈凹槽,所述缺口和凹槽构成焊接空隙,用于将焊料线圈放置于焊接空隙内进行焊接,所述焊料线圈由金钯合金丝制成。本发明的射频连接器工作耐温>1000℃,耐温时间>30分钟,也保证陶瓷与金属件同心度控制在0.05mm内,有效地保证了高频信号的强度。
Description
技术领域
本发明涉及一种耐高温射频连接器及其制备方法,属于信号传输技术领域。
背景技术
射频连接器是与同轴电缆、微带线或其它射频传输线连接,以实现传输线电气连接、分离或不同类型传输线转接的原件;属于机电一体化产品,起桥梁作用。随着通信技术的快速发展,特别是随着5G技术发展,信号传输面临高频转换的需要。而信号在射频连接器的高频转换过程中将产生大量热量,射频连接器的耐热性能的好坏将影响信号传输的工作。现有的射频连接器一般采用玻璃封装或钎焊工艺制作,其工作温度低于600℃,随着5G技术发展,信号的高频转换,连接器需要承受更高的温度保证信号的强度。
发明内容
本发明的目的是针对以上技术问题,发明一种耐高温射频连接器及其制备方法,以承受更高的温度保证信号传输的强度。
本发明的技术方案为:一种耐高温射频连接器的制备方法,所述射频连接器包括金属芯柱、金属外框和陶瓷体,所述金属芯柱为T型,所述陶瓷体中心沿轴向设有供金属芯柱穿过的T型通孔,陶瓷体外表面下部设有一环形阶梯,所述金属外框为与陶瓷体外表面相配合的阶梯状;在陶瓷体T型通孔的转角处和下端沿内表面设有环形缺口,在陶瓷体的环形阶梯的转角处设有一圈凹槽,所述缺口和凹槽构成焊接空隙;
所述制备方法包括以下步骤:
(1)使用氧化铝制备并加工成所述陶瓷体;
(2)采用钼锰金属化工艺在陶瓷体表面形成一层金属化层,然后在金属化层上镀一层镍层;
(3)将金属芯柱插入陶瓷体的T型通孔中,再将陶瓷体放入金属外框内,在装配过程中将焊料线圈放置于所述焊接空隙内,所述焊料线圈由金钯合金丝制成;
(4)在保护气氛下,在焊接温度为1200~1350℃下进行焊接,制备得到所述射频连接器。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(2)在所述焊接空隙及其临近区域形成金属化层。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(2)金属化层厚度为15~35微米,镍层厚度为3~8微米。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(2)制备金属化层的方法为:将金属化粉和粘接剂制成金属化膏剂,涂覆在陶瓷体表面,然后在1400~1600℃的温度下烧结。
上述的耐高温射频连接器的制备方法,进一步的,所述金属化粉包括按重量份计的下述组分:钼40-60份,锰10-20份,氧化锰10-20份,氧化铝10-20份,二氧化硅5-15份,氧化钙1-3份,以及氧化铁和氧化镁1-2份。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(2)的镀镍采用钯活化镀镍工艺,先用钯活化液活化金属化层,再镀镍。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(3)金钯合金丝钯含量5wt%~15wt%。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(3)金钯合金丝钯含量8~10wt%。
上述的耐高温射频连接器的制备方法,进一步的,所述步骤(4)保护气氛为氨分解气体、氮气或氩气,焊接保温时间为2~10分钟。
本发明提供的耐高温射频连接器,采用上述的耐高温射频连接器的制备方法制备得到。
与现有技术相比,本发明的有益效果为:
本发明在高铝陶瓷上,加大了金属化层中玻璃相比例,提高了金属化层与氧化铝陶瓷的结合强度。电镀工艺先采用钯活化液活化金属层,再镀镍,提升镍层质量及耐温能力。采用高熔点金钯合金做焊料,同时在陶瓷件与金属件套封区设置焊接空隙(凹槽和缺口),以放置焊料线圈子,提升了射频连接器的耐温性能,同时保证陶瓷件与金属件同心度。多种手段并用,使得其工作耐温>1000℃,耐温时间>30分钟,也保证陶瓷与金属件同心度控制在0.05mm内,有效地保证了高频信号的强度。
附图说明
图1为本发明一个具体实施例的耐高温射频连接器的陶瓷体剖面图;
图2为本发明一个具体实施例的耐高温射频连接器的剖面图。
其中:1、金属芯柱;2、金属外框;3、陶瓷体;4、陶瓷金属化与镀镍区;5、焊接空隙。
具体实施方式
为了便于理解本发明,下文将本发明做更全面、细致地描述,但本发明的保护范围并不限于以下具体实施例。
除非另有定义,下文中所使用的所有专业术语与本领域技术人员通常理解含义相同。本文中所使用的专业术语只是为了描述具体实施例的目的,并不是旨在限制本发明的保护范围。
除非另有特别说明,本发明中用到的各种原材料、试剂、仪器和设备等均可通过市场购买得到或者可通过现有方法制备得到。
本发明一个具体实施例的耐高温射频连接器,如图2所示,包括金属芯柱1、金属外框2和陶瓷体3。金属芯柱1为T型。陶瓷体3中心沿轴向设有供金属芯柱1穿过的T型通孔。陶瓷体3外圈为阶梯状,金属外框2为与陶瓷体3外圈相配合的阶梯状,金属外框2搭设在陶瓷体3外圈的阶梯上。
在陶瓷体3的T型通孔的转角处和下部开口处设有环绕内表面的缺口,在陶瓷体3的外圈阶梯转角处设有一圈凹槽,缺口和凹槽构成焊接空隙5。相应的,缺口和缺口相邻区域,以及凹槽及凹槽相邻区域为陶瓷金属化与镀镍区4,在该区域通过本发明工艺形成金属化层和金属化层上的镍层。所述缺口和凹槽处供放置焊料线圈,通过焊接将金属芯柱1、金属外框2和陶瓷体3紧密连接。以陶瓷留缺口和凹槽供放置焊料线圈,主要目的是保证焊接后,陶瓷与金属件之间绝缘区域一致,也就是同心度好,提升了耐温性能。
本发明一个具体实施例的耐高温射频连接器的制备方法,包括下述的步骤:
(1)陶瓷体的制作:用热压或干压等成型方式制作氧化铝坯体,经高温烧结成氧化铝陶瓷(优选氧化铝含量99%),经精密机加工将尺寸加工到所需公差范围内,形成如图1所示的陶瓷体3。通过尺寸公差的控制,控制了陶瓷与金属件的配合间隙和焊接空隙。具体的,陶瓷体3外径公差在-0.02mm,内径公差+0.02mm。
(2)陶瓷体金属化:采用钼锰金属化工艺,在陶瓷金属化与镀镍区4制作一层15~35微米的金属化层。然后采用钯活化镀镍工艺,在金属化层上镀一层3~8微米的耐高温镍层。由于焊接温度>1200℃,金属层过薄,影响焊接强度。
在一个优选实施例中,制备金属化层所采用的金属化粉的配方(质量份)为:钼:40-60份,锰:10-20份,氧化锰:10-20份,氧化铝:10-20份,二氧化硅:5-15份,氧化钙:1-3份,氧化铁和氧化镁1-2份。然后在金属化粉中添加占金属化粉重量10-40%的悬浮液(含有乙基纤维素的松油醇悬浮液,悬浮液的制备方法为:在松油醇中,以水浴加热溶解占松油醇重量10~30%的乙基纤维素),以及占金属化粉重量0-5%的流平剂、消泡剂和分散剂,球磨成金属化膏剂。将金属化膏剂涂覆于陶瓷金属化与镀镍区4,然后可以采用钼丝炉在保护气氛下,于1400~1600℃的温度下,烧结成的金属化层。
本发明将钼作为金属骨架体的含量降低,提高了玻璃相氧化物的含量,从而达到增加玻璃相对陶瓷体的渗透量,以达到增加金属化与氧化铝陶瓷结合强度的目的。其中氧化锰主要是做为玻璃相,加强金属层结合强度,氧化铁做为活化催化剂,氧化镁提升陶瓷体的绝缘耐压等电性能。
因金属层玻璃相多,直接镀镍困难,采用钯活化法,以钯作为活化剂,活化金属层,以备后续的镀镍,改良了金属层导电能力,方便电镀镍层,并且因钯熔度熔点高,故可以提升镍层耐温性能。
(3)焊料线圈的制备:采用金钯合金丝,优选其钯含量5%—15%、直径0.1-1mm,熔点>1200℃,制成所需不同尺寸线圈。
金钯合金熔点高,不同钯含量,其熔点也不同,钯含量越高,熔点也越高。钯含量8%,其熔点在1250℃,而电镀镍层,其耐温在1200℃内,因采用活化钯水镀镍,其镀镍层耐温在1300℃,故选择钯含量8~10%是最合适的。其主要创新点是找到钯含量合适的焊料,熔点也在镍层耐温范围内,在空气中耐温可到1000℃。而现有焊接技术一般采用银铜,铜料,银料等焊料,因银铜熔点779℃,银熔点961.78℃,铜1083℃,其焊接产品,银铜焊料产品耐温在600℃,银焊产品耐温800℃,铜焊产品900℃内。
(4)组装产品:将金属芯柱1插入氧化铝陶瓷体3中,再一起放入金属外框2内,两部件的间隙控制在0.02mm。在此过程中,将上述制备的焊料线圈放置于焊接空隙5内。再一起放置于工装夹具内,焊接夹具与陶瓷金属件之间的间隙控制在0.02mm内,从而控制焊接件之间的同心度。
(5)焊接:利用氨分解气体、氮气、氩气等保护气体,在焊接温度1200~1350℃下,保温2~10分钟,经高温钎焊制备成耐高温射频连接器。
实施例1
本实施例的耐高温射频连接器制备方法,如图1和2,具体步骤如下:
(1)陶瓷体的制作:用热压或干压等成型方式制作氧化铝坯体,经高温烧结成氧化铝陶瓷(氧化铝含量99%),经精密机加工将尺寸加工到所需公差范围内,形成如图1所示的陶瓷体3。陶瓷体3外径公差在-0.02mm,内径公差+0.02mm。
(2)陶瓷体金属化:采用钼锰金属化工艺,在陶瓷金属化与镀镍区4制作一层20微米的金属化层。然后采用钯活化镀镍工艺,在金属化层上镀一层5微米的耐高温镍层。
制备金属化层所采用的金属化粉的配方(质量份)为:钼:40份,锰:10份,氧化锰:10份,氧化铝:10份,二氧化硅:5份,氧化钙:1份,氧化铁和氧化镁1份。然后在金属化粉中添加占金属化粉重量10%的悬浮液(悬浮液的制备方法为:在松油醇中,以水浴加热溶解占松油醇重量10%的乙基纤维素),以及占金属化粉重量2%的流平剂、消泡剂和分散剂,球磨成金属化膏剂。将金属化膏剂涂覆于陶瓷金属化与镀镍区4,然后可以采用钼丝炉在保护气氛下,于1400~1600℃的温度下,烧结成的金属化层。
(3)焊料线圈的制备:采用金钯合金丝,其钯含量8%、直径0.5mm,熔点>1200℃,制成所需不同尺寸线圈。
(4)组装产品:将金属芯柱1插入氧化铝陶瓷体3中,再一起放入金属外框2内,两部件的间隙控制在0.02mm。在此过程中,将上述制备的焊料线圈放置于焊接空隙5内。再一起放置于工装夹具内,焊接夹具与陶瓷金属件之间的间隙控制在0.02mm内。
(5)焊接:利用氨分解气体、氮气、氩气等保护气体,在焊接温度1250℃下,保温10分钟,经高温钎焊制备成耐高温射频连接器。
本实施例的耐高温射频连接器工作耐温>1000℃,耐温时间>30分钟,陶瓷与金属件同心度控制在0.05mm内。
实施例2
本实施例的耐高温射频连接器制备方法,如图1和2,具体步骤如下:
(1)陶瓷体的制作:用热压或干压等成型方式制作氧化铝坯体,经高温烧结成氧化铝陶瓷(氧化铝含量99%),经精密机加工将尺寸加工到所需公差范围内,形成如图1所示的陶瓷体3。陶瓷体3外径公差在-0.02mm,内径公差+0.02mm。
(2)陶瓷体金属化:采用钼锰金属化工艺,在陶瓷金属化与镀镍区4制作一层32微米的金属化层。然后采用钯活化镀镍工艺,在金属化层上镀一层7微米的耐高温镍层。
制备金属化层所采用的金属化粉的配方(质量份)为:钼:60份,锰:20份,氧化锰:20份,氧化铝:20份,二氧化硅:15份,氧化钙:3份,氧化铁和氧化镁2份。然后在金属化粉中添加占金属化粉重量40%的悬浮液(悬浮液的制备方法为:在松油醇中,以水浴加热溶解占松油醇重量30%的乙基纤维素),以及占金属化粉重量3%的流平剂、消泡剂和分散剂,球磨成金属化膏剂。将金属化膏剂涂覆于陶瓷金属化与镀镍区4,然后可以采用钼丝炉在保护气氛下,于1400~1600℃的温度下,烧结成的金属化层。
(3)焊料线圈的制备:采用金钯合金丝,其钯含量10%、直径0.5mm,熔点>1200℃,制成所需不同尺寸线圈。
(4)组装产品:将金属芯柱1插入氧化铝陶瓷体3中,再一起放入金属外框2内,两部件的间隙控制在0.02mm。在此过程中,将上述制备的焊料线圈放置于焊接空隙5内。再一起放置于工装夹具内,焊接夹具与陶瓷金属件之间的间隙控制在0.02mm内。
(5)焊接:利用氨分解气体、氮气、氩气等保护气体,在焊接温度1300℃下,保温10分钟,经高温钎焊制备成耐高温射频连接器。
本实施例的耐高温射频连接器工作耐温>1000℃,耐温时间>30分钟,陶瓷与金属件同心度控制在0.05mm内。
上述只是本发明的较佳实施例,并非对本发明作任何形式上的限制。因此,凡是未脱离本发明技术方案的内容,依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰,均应落在本发明技术方案保护的范围内。
Claims (10)
1.一种耐高温射频连接器的制备方法,其特征在于,所述射频连接器包括金属芯柱、金属外框和陶瓷体,所述金属芯柱为T型,所述陶瓷体中心沿轴向设有供金属芯柱穿过的T型通孔,陶瓷体外表面下部设有一环形阶梯,所述金属外框为与陶瓷体外表面相配合的阶梯状;
在陶瓷体T型通孔的转角处和下端沿内表面设有环形缺口,在陶瓷体的环形阶梯的转角处设有一圈凹槽,所述缺口和凹槽构成焊接空隙;
所述制备方法包括以下步骤:
(1)使用氧化铝制备并加工成所述陶瓷体;
(2)采用钼锰金属化工艺在陶瓷体表面形成一层金属化层,然后在金属化层上镀一层镍层;
(3)将金属芯柱插入陶瓷体的T型通孔中,再将陶瓷体放入金属外框内,在装配过程中将焊料线圈放置于所述焊接空隙内,所述焊料线圈由金钯合金丝制成;
(4)在保护气氛下,在焊接温度为1200~1350℃下进行焊接,制备得到所述射频连接器。
2.根据权利要求1所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(2)在所述焊接空隙及其临近区域形成金属化层。
3.根据权利要求1所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(2)金属化层的厚度为15~35微米,镍层的厚度为3~8微米。
4.根据权利要求1或3所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(2)制备金属化层的方法为:将金属化粉和粘接剂制成金属化膏剂,涂覆在陶瓷体表面,然后在1400~1600℃的温度下烧结。
5.根据权利要求4所述的耐高温射频连接器的制备方法,其特征在于,所述金属化粉包括按重量份计的下述组分:钼40-60份,锰10-20份,氧化锰10-20份,氧化铝10-20份,二氧化硅5-15份,氧化钙1-3份,以及氧化铁和氧化镁1-2份。
6.根据权利要求1或3所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(2)的镀镍采用钯活化镀镍工艺,先用钯活化液活化金属化层,再镀镍。
7.根据权利要求1所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(3)金钯合金丝钯含量5wt%~15wt%。
8.根据权利要求7所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(3)金钯合金丝钯的含量8~10wt%。
9.根据权利要求1或7所述的耐高温射频连接器的制备方法,其特征在于,所述步骤(4)保护气氛为氨分解气体、氮气或氩气,焊接保温时间为2~10分钟。
10.一种耐高温射频连接器,其特征在于,采用权利要求1~9任一项所述的方法制备得到。
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