CN112509995A - Manufacturing method of LTCC radiating fin - Google Patents
Manufacturing method of LTCC radiating fin Download PDFInfo
- Publication number
- CN112509995A CN112509995A CN202011517021.2A CN202011517021A CN112509995A CN 112509995 A CN112509995 A CN 112509995A CN 202011517021 A CN202011517021 A CN 202011517021A CN 112509995 A CN112509995 A CN 112509995A
- Authority
- CN
- China
- Prior art keywords
- ltcc
- thermoelectric material
- radiating fin
- temperature
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a manufacturing method of an LTCC radiating fin, and belongs to the technical field of LTCC. The invention comprises the following steps: (1) casting the mixed material of the LTCC radiating fin body; (2) cutting the LTCC radiating fin body; (3) punching a through hole of the LTCC radiating fin body; (4) processing thermoelectric material slurry; (6) filling the through hole; (7) metal and thermoelectric material printing; (8) laminating; (9) according to the invention, a galvanic couple formed by N-type and P-type thermoelectric materials arranged in the LTCC is matched with an external direct-current power supply to work, the N, P-type thermoelectric material is integrally manufactured by a multi-layer printing and low-temperature co-firing compatible process of the LTCC, the high compatibility with the LTCC process is realized, the miniaturization and high integration of the LTCC module can be ensured, the heat dissipation performance of the LTCC device module can be enhanced, and the LTCC device module can be widely applied to the heat dissipation of LED packaging, the heat dissipation of high-power devices and the heat dissipation of LTCC packaging circuits.
Description
Technical Field
The invention relates to a manufacturing method of an LTCC radiating fin, and belongs to the technical field of LTCC.
Background
The heat dissipation can enhance the reliability and environmental adaptability of the electronic device, so that the service life of the device is prolonged and the device can work in a severe environment. At present, the commonly used heat dissipation methods are air convection heat dissipation and water cooling heat dissipation, and the heat dissipation method is characterized by large volume, non-miniaturization integration and low heat dissipation efficiency. LTCC has become a hot spot for manufacturing and developing high performance electronic devices rapidly in recent years due to its advantages of miniaturization, high reliability, and design and manufacturing. During the design and manufacture of LTCC device modules, heat dissipation is a critical consideration for its performance. The traditional heat dissipation method is utilized to carry out heat dissipation design, so that the size of the device is greatly increased, the design purpose of LTCC miniaturization is not met, the process is incompatible, and the production complexity is high.
Disclosure of Invention
The invention aims to overcome the defects of the existing device heat dissipation and provides a manufacturing method of an LTCC heat dissipation sheet.
The invention is realized by adopting the following technical scheme:
a manufacturing method of an LTCC heat sink comprises the following steps: (1) mixing and casting of the LTCC radiating fin body: casting the raw ceramic powder into a raw ceramic film belt, and winding the raw ceramic film belt; (2) cutting of the LTCC radiating fin body: cutting the cast raw ceramic film belt by adopting a punching die; (3) the through hole of LTCC fin body punches: punching through holes on the green ceramic chips according to design requirements by adopting a mechanical punching machine or a laser punching mode; (4) processing thermoelectric material slurry; (6) filling a through hole: filling through holes after a screen printing method, a porous workbench, a vacuum film sucking device, a hole filling thin steel plate and filter paper are added; (7) metal and thermoelectric material printing: adopting thick film screen printing, fixing the diaphragm on a porous worktable by vacuum suction, and printing a metal lead layer and a thermoelectric material layer; (8) laminating: laminating by using an isostatic press; (9) and (5) low-temperature co-firing.
Further, the method also comprises the following steps: alignment holes are used to align the layers prior to the lamination process.
Further, the thermoelectric material slurry processing step includes: (1) obtaining P-type and N-type thermoelectric material nano powder (2), mixing the thermoelectric material nano powder, glass powder and organic solvent (3), and rolling the mixture into uniform slurry by using a rolling mill.
Further, the step of low-temperature co-firing comprises the following steps: (1) co-firing at a temperature in the range of 200 ℃ to 500 ℃ to remove organic matter from the LTCC ceramic material and the thermoelectric material, and maintaining the temperature in this temperature range for about 1 hour; (2) co-firing at 850-875 ℃ and keeping the temperature for not less than 15 minutes.
Further, the thermoelectric materials form P, N coplanar structure on the same layer of ceramic film strip, or are manufactured by layering P-type thermoelectric materials and N-type thermoelectric materials, and the different-surface multilayer structure is formed by interconnection of metal interconnection lines.
Further, the interconnection line is a via pillar interconnection line structure, a metal layer printed strip line structure, or a structure in which the via pillar interconnection line structure is complementary to the strip line structure.
The invention has the beneficial effects that:
the N, P type thermoelectric material is integrally manufactured by a compatible process of multilayer printing and low-temperature co-firing of the LTCC, the high integration of the radiating fin in the LTCC module is ensured, the thermoelectric material is manufactured by a method of slurry printing, lamination embedding and low-temperature co-firing, and connecting wires among N, P type thermoelectric materials and leads connected with an external power supply are internally provided with the leads by the process of multilayer printing, through hole filling and low-temperature co-firing. The method has high compatibility with the LTCC process, simple manufacturing process and strong implementability. The LTCC packaging circuit can not only ensure the miniaturization and high integration of the LTCC module, but also enhance the heat dissipation performance of the LTCC device module, and can be widely applied to LED packaging heat dissipation, high-power device heat dissipation and LTCC packaging circuit heat dissipation.
Detailed Description
The present invention is further described below.
Example 1:
the LTCC heat sink structure described in this embodiment is widely applied to a high-power LTCC module, and the integrated manufacture of the LTCC heat dissipation functional circuit as a whole monolithic LTCC module is used for heat dissipation of the whole LTCC module, and the LTCC heat sink in the coplanar structure in this embodiment is an LTCC heat sink in the coplanar structure, and the P, N material forms a P, N coplanar structure on the same layer of LTCC film tape. Adopt the mode of PN material series connection, the couple that N type and P type thermoelectric material constitute cooperates external DC power supply to carry out work. The heat radiating fins exist in a galvanic couple mode, are manufactured by adopting a paste printing, laminating embedding and low-temperature co-firing method compatible with an LTCC process, and connecting wires among N, P type materials and leads for connecting an external power supply are internally provided with the leads by the LTCC multilayer printing, through hole filling and low-temperature co-firing process.
Taking a bismuth telluride thermoelectric material as an example, bismuth telluride powder is obtained by a solvothermal method, and the manufacture of the LTCC heat sink is carried out. The LTCC ceramic powder material is DuPont-951 produced by DuPont company, and comprises the following specific steps:
(1) mixing and casting: DuPont-951 green porcelain powder is cast into a green porcelain film tape, which is then wound up.
(2) Cutting: and a punching die is adopted to cut the cast raw ceramic membrane band, the size is relatively large, and membrane band pieces with poor quality are removed in the cutting process.
(3) Punching through holes: and punching through holes on the green ceramic chips by adopting a mechanical punching machine or a laser punching mode according to design requirements. The through holes mainly comprise the following application types: the P, N type material fills the through-hole of reservation, the through-hole of metal interconnect line for the through-hole etc. of counterpointing, and the through-hole size is 50 um.
(5) Thermoelectric material slurry processing: to obtain a nanopowder of type P, N material. Dissolving a raw material BiNO3 & 5H2O in an ethylene glycol organic solvent system, and adding other auxiliary additives such as sodium borohydride, EDTA and sodium hydroxide solution. And putting the obtained mixed solution into a high-pressure reaction kettle with a polytetrafluoroethylene lining, and reacting for 12-48 h at 120-200 ℃. And cooling to obtain a product, sequentially washing the product with deionized water, absolute ethyl alcohol and an acetone solution for several times, and drying in a vacuum drying oven at the temperature of 60-100 ℃ for 6-24 hours to obtain the bismuth telluride nano powder. And (3) doping the powder with a P type and an N type by using B and P respectively, mixing the doped bismuth telluride nano powder with glass powder and an organic solvent in a ratio of 73:2:25 respectively, and rolling the mixture by using a rolling mill to obtain uniform slurry.
(6) Filling a through hole: and filling the through holes after a screen printing method is utilized, a porous workbench, a vacuum membrane sucking device, a hole filling thin steel plate and filter paper are added.
(7) Metal and thermoelectric material printing: the printing of the metal lead layer and the thermoelectric material layer is performed after the membrane is fixed on the porous worktable by vacuum suction by adopting thick film screen printing.
(8) Laminating: alignment holes are needed to align the layers prior to the lamination process. During the lamination process, the pressure is kept uniform to prevent the base plate from being folded and layered or directly broken, and the base plate can be rotated timely to ensure uniform pressure. The isostatic press is generally used directly for lamination because of its uniform pressure.
(9) Low-temperature co-firing: first, co-firing is performed in the range of 200 to 500 ℃ to remove organic substances from the inside of the substrate. The incubation was carried out in this temperature range for about 1 hour. And then, co-firing at the temperature of 850-875 ℃, and preserving heat for not less than 15 minutes to finish the preparation of the LTCC radiating fin.
The whole radiating fin produced by the embodiment is integrally manufactured in the LTCC module, the miniaturization and high integration degree of the LTCC module can be guaranteed, the radiating performance of the LTCC device module can be enhanced, the high-temperature resistant characteristic of the LTCC module is further enhanced, and the size of the radiating fin is 15cm 10cm 1 cm. The method can be widely applied to heat dissipation of high-power devices and heat dissipation of LTCC packaging circuits.
Example 2:
the LTCC heat sink in this experimental example is an LTCC heat sink manufactured in a single piece, and a high-power integrated circuit, a high-power device, and the like that need to dissipate heat can be placed above the LTCC ceramic layer, so that heat dissipation of the device, the circuit, and the like is realized. The couple formed by the N-type thermoelectric material and the P-type thermoelectric material works by matching with an external direct current power supply. The heat radiating fins exist in a galvanic couple mode, are manufactured by adopting a paste printing, laminating embedding and low-temperature co-firing method compatible with an LTCC process, and connecting wires among N, P type materials and leads for connecting an external power supply are internally provided with the leads by the LTCC multilayer printing, through hole filling and low-temperature co-firing process.
In this embodiment, taking a bismuth telluride thermoelectric material as an example, bismuth telluride powder is obtained by a bulk bismuth telluride sputtering method, and the LTCC heat sink is manufactured. The LTCC ceramic powder material is DuPont-943 produced by DuPont company, and comprises the following specific steps:
(1) mixing and casting: DuPont-943 green porcelain powder was cast into a green porcelain film tape, which was then wound up.
(2) Cutting: and a punching die is adopted to cut the cast raw ceramic membrane band, the size is relatively large, and membrane band pieces with poor quality are removed in the cutting process.
(3) Punching through holes: and punching through holes on the green ceramic chips by adopting a mechanical punching machine or a laser punching mode according to design requirements. The through holes mainly comprise the following application types: the P, N type material fills the through-hole of reservation, the through-hole of metal interconnect line for the through-hole etc. of counterpointing, and the through-hole size is 60 um.
(5) Thermoelectric material slurry processing: to obtain a nanopowder of type P, N material. Doping the bulk bismuth telluride with B and P respectively to obtain P type and N type, sputtering the bulk bismuth telluride, and vacuumizing the cavity until the pressure is 9.0 × 10-6 Torr, then high purity argon and oxygen will be passed into the chamber through separate gas control devices. The total pressure is controlled to be around 10 mTorr and the ratio of oxygen to argon is 3: 17. The power is kept at about 100W, the sputtered powder is collected and respectively mixed with glass powder and an organic solvent in a ratio of 73:2:25, and the mixture is rolled into uniform slurry by a rolling mill.
(6) Filling a through hole: and filling the through holes after a screen printing method is utilized, a porous workbench, a vacuum membrane sucking device, a hole filling thin steel plate and filter paper are added.
(7) Metal and thermoelectric material printing: the printing of the metal lead layer and the thermoelectric material layer is performed after the membrane is fixed on the porous worktable by vacuum suction by adopting thick film screen printing.
(8) Laminating: alignment holes are needed to align the layers prior to the lamination process. During the lamination process, the pressure is kept uniform to prevent the base plate from being folded and layered or directly broken, and the base plate can be rotated timely to ensure uniform pressure. The isostatic press is generally used directly for lamination because of its uniform pressure.
(9) Low-temperature co-firing: first, co-firing is performed in the range of 200 to 500 ℃ to remove organic substances from the inside of the substrate. The incubation was carried out in this temperature range for about 1 hour. And then, co-firing at the temperature of 850-875 ℃, and preserving heat for not less than 15 minutes to finish the preparation of the LTCC radiating fin.
The whole radiating fin produced by the embodiment is integrally manufactured in the LTCC module, the miniaturization and high integration degree of the LTCC module can be guaranteed, the radiating performance of the LTCC device module can be enhanced, the high-temperature resistant characteristic of the LTCC module is further enhanced, and the size of the radiating fin is 1cm x 0.1 cm. The LED packaging heat dissipation structure can be widely applied to LED packaging heat dissipation.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A method for manufacturing an LTCC heat sink is characterized by comprising the following steps:
mixing and casting of the LTCC radiating fin body: casting the raw ceramic powder into a raw ceramic film belt, and winding the raw ceramic film belt; (2) cutting of the LTCC radiating fin body: cutting the cast raw ceramic film belt by adopting a punching die; (3) the through hole of LTCC fin body punches: punching through holes on the green ceramic chips according to design requirements by adopting a mechanical punching machine or a laser punching mode; (4) processing thermoelectric material slurry; (6) filling a through hole: filling through holes after a screen printing method, a porous workbench, a vacuum film sucking device, a hole filling thin steel plate and filter paper are added; (7) metal and thermoelectric material printing: adopting thick film screen printing, fixing the diaphragm on a porous worktable by vacuum suction, and printing a metal lead layer and a thermoelectric material layer; (8) laminating: laminating by using an isostatic press; (9) and (5) low-temperature co-firing.
2. The method of making an LTCC heat sink of claim 1, wherein: further comprising the steps of: alignment holes are used to align the layers prior to the lamination process.
3. The method of making an LTCC heat sink of claim 1, wherein: the thermoelectric material slurry processing step includes: (1) obtaining P-type and N-type thermoelectric material nano powder (2), mixing the thermoelectric material nano powder, glass powder and organic solvent (3), and rolling the mixture into uniform slurry by using a rolling mill.
4. The method of making an LTCC heat sink of claim 3, wherein: the thermoelectric material is prepared into powder with uniform grains by sputtering, solvothermal method or zone melting method.
5. The method of making an LTCC heat sink of claim 1, wherein: the low-temperature co-firing step comprises: (1) co-firing at a temperature in the range of 200 ℃ to 500 ℃ to remove organic matter from the LTCC ceramic material and the thermoelectric material, and maintaining the temperature in this temperature range for about 1 hour; (2) co-firing at 850-875 ℃ and keeping the temperature for not less than 15 minutes.
6. The method of making an LTCC heat sink of claim 1, wherein: the thermoelectric materials form P, N coplanar structure on the same layer of ceramic film strip, or are manufactured by layering of P-type thermoelectric materials and N-type thermoelectric materials, and are interconnected through metal interconnection lines to form an out-of-plane multilayer structure.
7. The method of making an LTCC heat sink of claim 6, wherein: the interconnecting wire is a through hole columnar interconnecting wire structure, a strip line structure printed by a metal layer or a structure of the through hole columnar interconnecting wire structure and the strip line structure which are complementary.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011517021.2A CN112509995B (en) | 2020-12-21 | 2020-12-21 | Manufacturing method of LTCC radiating fin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011517021.2A CN112509995B (en) | 2020-12-21 | 2020-12-21 | Manufacturing method of LTCC radiating fin |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112509995A true CN112509995A (en) | 2021-03-16 |
CN112509995B CN112509995B (en) | 2022-08-09 |
Family
ID=74922702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011517021.2A Active CN112509995B (en) | 2020-12-21 | 2020-12-21 | Manufacturing method of LTCC radiating fin |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112509995B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116118337A (en) * | 2023-02-23 | 2023-05-16 | 湖州瓷芯电子科技有限公司 | LTCC flexible screen printing plate, preparation method thereof and application implementation process |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999065086A1 (en) * | 1998-06-08 | 1999-12-16 | Ormet Corporation | Process for production of high performance thermoelectric modules and low temperature sinterable thermoelectric compositions therefor |
US20030034564A1 (en) * | 1999-12-13 | 2003-02-20 | Ponnusamy Palanisamy | Low temperature co-fired ceramic-metal packaging technology |
US20030034556A1 (en) * | 2001-07-10 | 2003-02-20 | Klaus Voigtlaender | Integrated semiconductor circuit, method of cooling a microwave circuit area and method of producing an integrated semiconductor circuit |
JP2003298127A (en) * | 2002-04-02 | 2003-10-17 | Sony Corp | Thermoelectric conversion device, its manufacturing method, and thermoelectric power generator |
US20090185004A1 (en) * | 2008-01-17 | 2009-07-23 | Seiko Epson Corporation | Droplet discharge head and pattern forming device |
JP2009231729A (en) * | 2008-03-25 | 2009-10-08 | Nec Corp | Semiconductor device |
JP2011155091A (en) * | 2010-01-27 | 2011-08-11 | Opnext Japan Inc | Optical module |
WO2012055781A1 (en) * | 2010-10-28 | 2012-05-03 | International Business Machines Corporation | Thermal power plane for integrated circuits |
CN102947960A (en) * | 2010-06-04 | 2013-02-27 | 欧-弗莱克斯科技有限公司 | Thermoelectric element |
CN103025130A (en) * | 2012-12-06 | 2013-04-03 | 赵建光 | Integrated multifunctional alumina ceramic electronic refrigeration radiator and production method thereof |
CN202888170U (en) * | 2012-10-18 | 2013-04-17 | 贵州振华风光半导体有限公司 | Multi-chip assembly with controllable operating temperature |
WO2017141215A1 (en) * | 2016-02-18 | 2017-08-24 | Eric Matte | High efficiency heat dissipation methods and systems for electronic circuits and systems |
US20200144237A1 (en) * | 2018-11-05 | 2020-05-07 | Samsung Electronics Co., Ltd. | Semiconductor package |
-
2020
- 2020-12-21 CN CN202011517021.2A patent/CN112509995B/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999065086A1 (en) * | 1998-06-08 | 1999-12-16 | Ormet Corporation | Process for production of high performance thermoelectric modules and low temperature sinterable thermoelectric compositions therefor |
US20030034564A1 (en) * | 1999-12-13 | 2003-02-20 | Ponnusamy Palanisamy | Low temperature co-fired ceramic-metal packaging technology |
US20030034556A1 (en) * | 2001-07-10 | 2003-02-20 | Klaus Voigtlaender | Integrated semiconductor circuit, method of cooling a microwave circuit area and method of producing an integrated semiconductor circuit |
JP2003298127A (en) * | 2002-04-02 | 2003-10-17 | Sony Corp | Thermoelectric conversion device, its manufacturing method, and thermoelectric power generator |
US20090185004A1 (en) * | 2008-01-17 | 2009-07-23 | Seiko Epson Corporation | Droplet discharge head and pattern forming device |
JP2009231729A (en) * | 2008-03-25 | 2009-10-08 | Nec Corp | Semiconductor device |
JP2011155091A (en) * | 2010-01-27 | 2011-08-11 | Opnext Japan Inc | Optical module |
CN102947960A (en) * | 2010-06-04 | 2013-02-27 | 欧-弗莱克斯科技有限公司 | Thermoelectric element |
WO2012055781A1 (en) * | 2010-10-28 | 2012-05-03 | International Business Machines Corporation | Thermal power plane for integrated circuits |
CN202888170U (en) * | 2012-10-18 | 2013-04-17 | 贵州振华风光半导体有限公司 | Multi-chip assembly with controllable operating temperature |
CN103025130A (en) * | 2012-12-06 | 2013-04-03 | 赵建光 | Integrated multifunctional alumina ceramic electronic refrigeration radiator and production method thereof |
WO2017141215A1 (en) * | 2016-02-18 | 2017-08-24 | Eric Matte | High efficiency heat dissipation methods and systems for electronic circuits and systems |
US20200144237A1 (en) * | 2018-11-05 | 2020-05-07 | Samsung Electronics Co., Ltd. | Semiconductor package |
Non-Patent Citations (1)
Title |
---|
程浩,陈明祥,罗小兵,彭洋,刘松坡: ""电子封装陶瓷基板"", 《现代技术陶瓷》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116118337A (en) * | 2023-02-23 | 2023-05-16 | 湖州瓷芯电子科技有限公司 | LTCC flexible screen printing plate, preparation method thereof and application implementation process |
Also Published As
Publication number | Publication date |
---|---|
CN112509995B (en) | 2022-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP4282848A1 (en) | Preparation method for copper plate-covered silicon nitride ceramic substrate | |
CN112509995B (en) | Manufacturing method of LTCC radiating fin | |
CN102795841B (en) | Alumina-based ceramic, ceramic radiating substrate and preparation method for ceramic radiating substrate | |
CN101980389B (en) | Flat plate-type ceramic package radiating module for high-power LED and manufacturing method thereof | |
US20190047915A1 (en) | Ceramic substrate and production method for same | |
CN106631036A (en) | Sintering method of high-temperature co-firing aluminum nitride ceramics | |
CN107266046A (en) | A kind of aluminum oxide fluorescence ceramics piece and its preparation method and application | |
CN116102340A (en) | Low-temperature co-fired raw ceramic, preparation method and ceramic substrate | |
CN113540001B (en) | Kovar/silver alloy composite material for microelectronic packaging and preparation method thereof | |
CN113548877B (en) | Efficient heat dissipation composite ceramic substrate and preparation method thereof | |
CN115557794A (en) | High-temperature co-fired ceramic HTCC preparation process based on tungsten paste for screen printing | |
CN201355611Y (en) | Die bonding base plate with surface polishing layer | |
CN115536371A (en) | Preparation method of high-strength 96 aluminum oxide ceramic | |
CN201100917Y (en) | Efficient LED encapsulation structure | |
CN116410003B (en) | Substrate, preparation method and application | |
CN217768414U (en) | Eutectic bonding wire structure of metal box dam on pottery | |
JP3973407B2 (en) | Method for producing aluminum nitride sintered body | |
JPH0997862A (en) | High-strength circuit board and its manufacturing method | |
CN114710847B (en) | Electronic ceramic heater for semiconductor chip sealing and testing and preparation method thereof | |
CN114334444B (en) | Single-layer ceramic capacitor grain boundary layer semiconductor ceramic material and preparation thereof | |
CN118324525B (en) | Multi-layer ceramic sounding material reduced and co-fired with nickel electrode and preparation method thereof | |
CN112351581A (en) | Structure and method for adding heat dissipation block on ceramic circuit board | |
US20220241852A1 (en) | Sinter-ready silver films | |
JP2016160176A (en) | Method for producing low temperature sintered alumina ceramic | |
CN116903379A (en) | Preparation method of composite aluminum nitride ceramic substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |