CN112509969A - 晶圆处理装置及晶圆处理方法 - Google Patents

晶圆处理装置及晶圆处理方法 Download PDF

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CN112509969A
CN112509969A CN202011372689.2A CN202011372689A CN112509969A CN 112509969 A CN112509969 A CN 112509969A CN 202011372689 A CN202011372689 A CN 202011372689A CN 112509969 A CN112509969 A CN 112509969A
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wafer
revolution
drive
rotation
wafer processing
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吕相林
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United Microelectronics Center Co Ltd
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United Microelectronics Center Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明涉及一种晶圆处理装置及晶圆处理方法，所述晶圆处理装置包括：晶圆载具，用于承载晶圆；公转驱动装置，能够带动晶圆载具沿着一公转轴旋转，所述公转轴位于晶圆载具外部；自转驱动装置，所述自转驱动装置能够带动晶圆载具沿着一自转轴旋转，所述自转轴位于晶圆载具的圆心并与晶圆表面垂直。所述晶圆处理方法包括清洗步骤和药液甩脱步骤，所述清洗步骤是采用一公转驱动装置带动晶圆沿着一公转轴旋转；所述药液甩脱步骤是采用一自转驱动装置带动晶圆沿着一自转轴旋转。本发明旨在通过将晶圆处理装置设计为公转与自转相结合的方式来对晶圆进行刻蚀，优化其总厚度偏差和一致性，控制晶圆的刻蚀速率，同时最大程度的提高药液的利用率，降低制造成本。

Description

晶圆处理装置及晶圆处理方法
技术领域
本发明涉及半导体设备领域，尤其涉及一种晶圆处理装置及晶圆处理方法。
背景技术
现有技术中，使用的晶圆处理装置普遍采用的方式是由定位销将晶圆固定在卡盘上，晶圆随卡盘自转的装置。这种装置药液喷出后，在离心力的作用下，由晶圆的圆心向晶圆的边缘甩出。这导致晶圆中心刻蚀速率偏低以及湿法刻蚀后的总厚度偏差大、一致性差，同时还有调节难度大，药液利用率低等问题。
发明内容
本发明所要解决的技术问题是提供一种晶圆处理装置及晶圆处理方法，解决湿法清洗设备药液利用率低、晶圆中心刻蚀速率偏低以及湿法刻蚀后的总厚度偏差大、一致性差以及调节难度大的问题。
为了解决上述问题，本发明提供了一种晶圆处理装置，包括：晶圆载具，用于承载晶圆；公转驱动装置，所述公转驱动装置能够带动晶圆载具沿着一公转轴旋转，所述公转轴位于晶圆载具外部；自转驱动装置，所述自转驱动装置能够带动晶圆载具沿着一自转轴旋转，所述自转轴位于晶圆载具的圆心并与晶圆表面垂直。
本发明还提供了一种晶圆处理方法，所述晶圆处理方法包括清洗步骤和药液甩脱步骤。所述清洗步骤是采用一公转驱动装置带动晶具沿着一公转轴旋转；所述药液甩脱步骤是采用一自转驱动装置带动晶具沿着一自转轴旋转。
本发明旨在通过将晶圆处理装置设计为公转与自转相结合的方式来对晶圆进行刻蚀，优化其总厚度偏差和一致性，控制晶圆的刻蚀速率，同时最大程度的提高药液的利用率，降低制造成本。
附图说明
附图1所示是本发明一具体实施方式所述结构示意图。
附图2所示是本发明一具体实施方式所述步骤示意图。
具体实施方式
下面结合附图对本发明提供的一种晶圆处理装置及晶圆处理方法的具体实施方式做详细说明。
附图1所示是本发明一具体实施方式所述晶圆处理装置结构示意图，包括：
晶圆载具，用于承载晶圆104；公转驱动装置，所述公转驱动装置能够带动晶圆载具沿着一公转轴OO’旋转，所述公转轴OO’位于晶圆载具外部；自转驱动装置，所述自转驱动装置能够带动晶圆载具沿着一自转轴AA’旋转，所述自转轴AA’位于晶圆载具的圆心并与晶圆104表面垂直。
所述晶圆载具包括：卡盘102，所述卡盘102用于放置晶圆104，且能够自转；底盘101，所述底盘101设置在卡盘102下方，能够自转，且能够带动卡盘102公转。所述卡盘具有定位销103，用于卡固所述晶圆104。
附图2所示是本发明一具体实施方式所述步骤示意图，包括：步骤S21，晶圆由定位销固定在卡盘上之后，底盘和卡盘绕公转轴进行公转；步骤S22，调整转速，控制药液铺开的均匀性；步骤S23，药液作用时间到设定时间后，停止底盘转动，同时卡盘自转，药液和反应物在离心力作用下被迅速甩出晶圆。
在一个具体实施方式中，所述晶圆处理方法包括清洗步骤和药液甩脱步骤。所述清洗步骤是采用一公转驱动装置带动晶圆104沿着一公转轴OO’旋转，参考步骤S21，晶圆104由定位销103固定在卡盘102上之后，底盘101和卡盘102绕公转轴OO’进行公转，所述公转具体是底盘101和卡盘102在同一轴心以相同角速度转动；参考步骤S22，调整转速，控制药液铺开的均匀性。由于公转，药液在晶圆104表面均匀铺开，能最大程度的保证晶圆104整体刻蚀速率，解决了晶圆中心刻蚀速率偏低的问题。所述药液甩脱步骤是采用一自转驱动装置带动晶圆104沿着一自转轴AA’旋转，参考步骤S23，药液作用时间到设定时间后，停止底盘101转动，同时卡盘102自转，药液和反应物在离心力作用下被迅速甩出晶圆104。
所述清洗步骤中由于卡盘102和底盘101公转，可最大程度的提高药液的利用率，在向心力作用下，药液喷出时间大幅缩减，每小时出片量得到提高；且由于药液是在公转中在晶圆104表面均匀铺开，能最大程度的保证晶圆104整体刻蚀速率，改善其总厚度偏差一致性；所述药液甩脱步骤，当底盘101停止转动后，卡盘102仍高速转动，晶圆104表面的药液和反应物在极短时间内被甩出，降低晶圆中心与晶圆边缘之间的刻蚀速率的差异。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (5)

1.一种晶圆处理装置，其特征在于，包括：
晶圆载具，用于承载晶圆；
公转驱动装置，所述公转驱动装置能够带动晶圆载具沿着一公转轴旋转，所述公转轴位于晶圆载具外部；
自转驱动装置，所述自转驱动装置能够带动晶圆载具沿着一自转轴旋转，所述自转轴位于晶圆载具的圆心并与晶圆表面垂直。
2.根据权利要求1中所述的晶圆处理装置，其特征在于，所述晶圆载具包括：卡盘，所述卡盘用于放置晶圆，且能够自转；
底盘，所述底盘设置在卡盘下方，能够自转，且能够带动卡盘公转。
3.根据权利要求2中所述的晶圆处理装置，其特征在于，所述卡盘具有定位销，用于卡固所述晶圆。
4.一种晶圆处理方法，其特征在于，所述晶圆处理方法包括清洗步骤和药液甩脱步骤，所述清洗步骤是采用一公转驱动装置带动晶圆沿着一公转轴旋转；所述药液甩脱步骤是采用一自转驱动装置带动晶圆沿着一自转轴旋转。
5.根据权利要求4中所述的晶圆处理方法，其特征在于，所述清洗步骤能够调整公转驱动装置的转速，以控制药液铺开的均匀性。
CN202011372689.2A 2020-11-30 2020-11-30 晶圆处理装置及晶圆处理方法 Pending CN112509969A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223603A (ja) * 1997-02-12 1998-08-21 Toshiba Corp 枚葉式ウエットエッチング装置
TW201628081A (zh) * 2015-01-30 2016-08-01 Semtek Corp 公自轉濕製程設備
CN108315718A (zh) * 2017-01-11 2018-07-24 东京毅力科创株式会社 基板处理装置
CN109304318A (zh) * 2018-11-30 2019-02-05 上海华力微电子有限公司 一种晶圆清洗装置及清洗方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223603A (ja) * 1997-02-12 1998-08-21 Toshiba Corp 枚葉式ウエットエッチング装置
TW201628081A (zh) * 2015-01-30 2016-08-01 Semtek Corp 公自轉濕製程設備
CN108315718A (zh) * 2017-01-11 2018-07-24 东京毅力科创株式会社 基板处理装置
CN109304318A (zh) * 2018-11-30 2019-02-05 上海华力微电子有限公司 一种晶圆清洗装置及清洗方法

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Application publication date: 20210316