CN112504213B - Semiconductor film flatness calculation method and system and semiconductor machine adjustment method - Google Patents
Semiconductor film flatness calculation method and system and semiconductor machine adjustment method Download PDFInfo
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- CN112504213B CN112504213B CN202011435321.6A CN202011435321A CN112504213B CN 112504213 B CN112504213 B CN 112504213B CN 202011435321 A CN202011435321 A CN 202011435321A CN 112504213 B CN112504213 B CN 112504213B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
The invention provides a semiconductor film flatness calculation method and system and a semiconductor machine adjusting method. The method for acquiring the flatness of the semiconductor film comprises the steps of acquiring position coordinates of a plurality of measuring points on the surface of the semiconductor film, fitting the position coordinates of the measuring points to obtain a fitting plane of the surface of the semiconductor film, acquiring vertical distances from the measuring points to be measured on the surface of the semiconductor film to the fitting plane, and processing the vertical distances to obtain the flatness of the measuring points to be measured on the surface of the semiconductor film. The flatness of the semiconductor film obtained by the method for calculating the flatness of the semiconductor film is simple in process, the film thickness of each point does not need to be measured, and the method has the effects of saving manpower and material resources and improving efficiency.
Description
Technical Field
The invention relates to the field of flatness calculation methods, in particular to a semiconductor film flatness calculation method and system and a semiconductor machine adjusting method.
Background
Semiconductor films are the basic materials that make up the elements on integrated circuit chips. With the development of technology, the integration level of components on a large-scale integrated circuit chip is higher, the quality requirement on the chip is higher, and the requirement on the flatness of a semiconductor film is higher. The position of the machine directly affects the flatness of the semiconductor film, and the position of the machine needs to be adjusted continuously in order to obtain a semiconductor film with flatness within a standard range. In the prior art, the film thickness of each point on a semiconductor film needs to be measured to obtain the film thickness distribution, the position of a machine table is continuously adjusted by comparing the film thickness distribution of the semiconductor film produced by the machine table before and after adjustment, and finally the flatness of the semiconductor film produced by the machine table is in a standard range. Therefore, the method not only wastes time and labor, but also wastes resources.
Disclosure of Invention
The invention aims to provide a method and a system for calculating the flatness of a semiconductor film and a method for adjusting a semiconductor machine, which are used for solving the problems of complex method for acquiring the flatness of the semiconductor film, time and labor waste and low efficiency in the prior art.
In order to achieve the above object, the present invention provides a method for obtaining the flatness of a semiconductor film, including obtaining position coordinates of a plurality of measurement points on a surface of the semiconductor film, fitting the position coordinates of the plurality of measurement points to obtain a fitting plane of the surface of the semiconductor film, obtaining vertical distances from a plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane, and processing the vertical distances to obtain the flatness of the measurement points to be measured on the surface of the semiconductor film.
In one possible embodiment, "acquiring the position coordinates of a plurality of measurement points of the surface of the semiconductor film" includes acquiring the position coordinates of at least three measurement points of the semiconductor film, and at least three of the measurement points are not on the same straight line.
In one possible embodiment, "fitting the position coordinates of the plurality of measurement points to obtain a fitted plane of the surface of the semiconductor film" includes: and performing plane fitting on the position coordinates of the plurality of measuring points according to a plane equation z ═ ax + by + c to obtain plane fitting parameters a, b and c, wherein the plane where the plane equation z ═ ax + by + c is located represents the fitting plane.
In one possible embodiment, "performing a plane fitting on the position coordinates of the plurality of measurement points according to the plane equation z ═ ax + by + c to obtain plane fitting parameters a, b, and c" includes performing a plane fitting on the position coordinates of the plurality of measurement points according to the plane equation z ═ ax + by + c to obtain plane fitting parameters a, b, and c using a least squares method.
In one possible embodiment, "obtaining the vertical distance from the fitting plane to the plurality of measurement points to be measured on the surface of the semiconductor film" includes projecting the plurality of measurement points to be measured onto the fitting plane to obtain a plurality of projection points, wherein each measurement point to be measured is projected in a direction perpendicular to the fitting plane, and the plurality of measurement points to be measured correspond to the plurality of projection points one to one; and acquiring the vertical distance between the plurality of to-be-measured measuring points and the corresponding projection points to obtain the vertical distance between the plurality of to-be-measured measuring points on the surface of the semiconductor film and the fitting plane.
In one possible embodiment, the "processing a plurality of the vertical distances to obtain the flatness of the measurement point to be measured on the surface of the semiconductor film" includes obtaining an average value of a plurality of the vertical distances; and acquiring the difference value between the vertical distance from the measurement point to be measured to the fitting plane and the average value, wherein the difference value is used for representing the flatness of the measurement point to be measured on the surface of the semiconductor film.
The invention also provides an acquisition system of the flatness of the semiconductor film, which comprises an acquisition module and a processing module connected with the acquisition module, wherein the acquisition module is used for acquiring the position coordinates of a plurality of measurement points on the surface of the semiconductor film, and the processing module is used for fitting the position coordinates of the plurality of measurement points to obtain a fitting plane of the surface of the semiconductor film. The acquisition module is further used for acquiring vertical distances from the plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane, and the processing module is further used for processing the plurality of vertical distances to obtain the flatness of the measurement points to be measured on the surface of the semiconductor film.
In one possible embodiment, the processing module fits a plane equation of the fitted plane by a least squares method.
The invention also provides an adjusting method of a semiconductor machine, which comprises the steps of forming a semiconductor film on the surface of a wafer on the semiconductor machine, and acquiring the flatness of the surface of the semiconductor film, wherein the flatness of the semiconductor film is acquired according to the acquiring method of the flatness of the semiconductor film in any embodiment; and adjusting the position of the semiconductor machine according to the flatness of the semiconductor die.
In one possible embodiment, "acquiring the flatness of the surface of the semiconductor film" includes acquiring a flatness profile of the surface of the semiconductor film from the flatness of the measurement point to be measured of the semiconductor film. The "adjusting the stage according to the flatness of the semiconductor film" includes adjusting the position of the stage according to a flatness profile of the semiconductor film.
In summary, the invention obtains a fitting plane through the coordinates of the upper part points of the semiconductor film, obtains the flatness of the to-be-measured points on the surface of the semiconductor film and the flatness distribution pattern of the surface of the semiconductor film according to the fitting plane, and then adjusts the position of the machine according to the flatness distribution. The method has the effects of simplifying the process, saving manpower and material resources and improving the efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method for obtaining planarity of a semiconductor film according to the present invention;
fig. 2 is a flatness profile of the surface of the semiconductor film obtained according to the obtaining method of fig. 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a method for obtaining the flatness of a semiconductor film, comprising the steps of:
s1: acquiring position coordinates of a plurality of measuring points on the surface of the semiconductor film;
s2: fitting the position coordinates of the plurality of measurement points to obtain a fitted plane of the surface of the semiconductor film;
s3: acquiring vertical distances from a plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane;
s4: and processing a plurality of vertical distances to obtain the flatness of the measurement point to be measured on the surface of the semiconductor film.
The process for obtaining the flatness of the semiconductor film by adopting the steps is simple, the film thickness of each point does not need to be measured, and the function of saving manpower and physical force is achieved.
The method for obtaining the flatness of a semiconductor film according to the present invention will be described with reference to specific examples.
And S1, acquiring the position coordinates of a plurality of measuring points on the surface of the semiconductor film, wherein the number of the measuring points is at least three, and at least three of the measuring points are not on the same straight line.
When the number of the obtained measuring points is three, the three measuring points form a plane, and the plane is a fitting plane. Since the film thickness of the semiconductor film is generally not uniformly distributed and the position coordinates of the measurement points are acquired to have randomness, the position coordinates of a plurality of representative measurement points, such as the edge and the center of the semiconductor film, are generally acquired in actual operation. The number of measurement points of the semiconductor film and the number of measurement points in each region can be adjusted in accordance with actual conditions, and the number of measurement points can be reduced in a region where the film thickness distribution is uniform, and the number of measurement points can be increased as appropriate in a region where the film thickness distribution is non-uniform, so as to minimize the error of the fitting plane obtained in step S2. The more and more representative the number of the position coordinates of the acquired measurement points is, the smaller the error of the fitting plane obtained in step S2 is, and the smaller the difference between the flatness of each point finally obtained and the actual flatness is.
And S2, fitting the position coordinates of the plurality of measuring points to obtain a fitting plane of the surface of the semiconductor film. The S2 process includes performing plane fitting on the position coordinates of the plurality of measurement points according to a plane equation z ═ ax + by + c to obtain plane fitting parameters a, b, and c, where a plane where the plane equation z ═ ax + by + c represents the fitting plane.
Specifically, a least square method is adopted to perform plane fitting on the position coordinates of the plurality of measurement points according to a plane equation z ═ ax + by + c, so as to obtain plane fitting parameters a, b, and c.
The position coordinates of a plurality of measuring points are Gi { (xi, yi, zi) and i { (xi, yi, zi) and 1,2, …, n }, and the position coordinates Gi { (xi, yi, zi) and i { (xi, yi, zi) are substituted into a formula
Let S be minimum, i.e. satisfy
Obtain a linear equation
And obtaining the values of the plane fitting parameters a, b and c according to the linear equation.
And S3, acquiring the vertical distances from the plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane.
The S3 process includes projecting the multiple measurement points to be measured onto the fitting plane to obtain multiple projection points, where each measurement point to be measured is projected in a direction perpendicular to the fitting plane, and the multiple measurement points to be measured correspond to the multiple projection points one to one. And acquiring the vertical distance between the plurality of to-be-measured measuring points and the corresponding projection points to obtain the vertical distance between the plurality of to-be-measured measuring points on the surface of the semiconductor film and the fitting plane.
Specifically, each point to be measured Pj { (xj, yj, zj), j { (1, 2, …, n } on the surface of the semiconductor film is projected onto the fitting plane z ═ ax + by + c along a direction perpendicular to the fitting plane, a projection point (xj, yj) corresponding to each point to be measured is obtained, and the perpendicular distance from each point to be measured on the surface of the semiconductor film to the fitting plane is obtained from the projection point (xj, yj) and the fitting plane equation z ═ ax + by + c. In this embodiment, each point Pj to be measured on the surface of the semiconductor film is projected to the fitting plane along a direction perpendicular to the fitting plane, so as to obtain specific values of xj and yj in the projection points (xj, yj) corresponding to each point to be measured, and the values of xj and yj are substituted into a plane equation z ═ ax + by + c, so as to obtain a value zj, where zj is a perpendicular distance from the point to be measured on the surface of the semiconductor film to the fitting plane.
And S4, processing a plurality of vertical distances to obtain the flatness of the measurement point to be measured on the surface of the semiconductor film. Specifically, S4 includes obtaining an average value of a plurality of the vertical distances, and determining a difference between the vertical distance from the point to be measured on the surface of the semiconductor film to the fitting plane and the average value, wherein the difference is used to characterize the flatness of the point to be measured on the surface of the semiconductor film. A plurality of the vertical distances are obtained according to the method of S3. Therefore, the coordinates of the partial points on the semiconductor film are obtained, the coordinates are fitted to obtain the fitting plane, and the flatness of any point of the semiconductor film is obtained through calculation according to the fitting plane.
In another embodiment, the present invention provides an acquisition system for semiconductor film planarity, the acquisition system comprising an acquisition module and a processing module connected to the acquisition module; the acquisition module is used for acquiring position coordinates of a plurality of measurement points on the surface of the semiconductor film; the processing module is used for fitting the position coordinates of the plurality of measuring points to obtain a fitting plane of the surface of the semiconductor film; the acquisition module is also used for acquiring the vertical distances from a plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane; the processing module is also used for processing the vertical distances to obtain the flatness of the measurement point to be measured on the surface of the semiconductor film.
The semiconductor film flatness acquisition system is performed in the following order in acquiring the flatness of the semiconductor film. Firstly, an acquisition module acquires position coordinates of a plurality of measurement points on the surface of the semiconductor film, and the number and the position distribution of the plurality of measurement points can be adjusted according to the actual situation; then, the processing module fits the position coordinates of the plurality of measurement points by a least square method to obtain a fitting plane and a fitting plane equation of the semiconductor film; then, the acquisition module acquires the vertical distances from the plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane; and finally, the processing module obtains the flatness of each measuring point to be measured on the surface of the semiconductor film according to the plurality of vertical distances.
Specifically, the step of obtaining the flatness of each measurement point to be measured on the surface of the semiconductor film by the processing module according to the plurality of vertical distances comprises the step of calculating an average value of the plurality of vertical distances by the processing module, and then subtracting the average value from the vertical distance from the measurement point to be measured to the fitting plane to obtain the flatness of the measurement point to be measured.
The system for acquiring the flatness of the semiconductor film provided by the embodiment has a simple structure, and the flatness of any measuring point to be measured on the surface of the semiconductor film can be acquired through fitting and calculation only by acquiring the position coordinates of the measuring points of partial points on the surface of the semiconductor film.
In another embodiment, the present invention further provides a method for adjusting a semiconductor machine, including forming a semiconductor film on a surface of a wafer on the semiconductor machine; obtaining flatness of the semiconductor film; wherein the flatness of the semiconductor film is obtained according to the method for obtaining flatness of a semiconductor film according to any of the above embodiments; and adjusting the position of the machine table according to the flatness of the semiconductor film.
Specifically, a flatness distribution graph of the surface of the semiconductor film is obtained according to the flatness of the to-be-measured measuring point of the semiconductor film; the "adjusting the stage according to the flatness of the semiconductor film" includes adjusting the position of the stage according to a flatness profile of the semiconductor film.
Referring to fig. 2, in the present embodiment, the flatness of the semiconductor film is divided into 9 regions, and each region corresponds to a different flatness range. Wherein, the flatness of the area (1) is less than-278.0, the flatness range of the area (2) is between-278.0 and-156.4, the flatness range of the area (3) is between-156.4 and-95.7, and the like, and the flatness range of the area (9) is between 208.2 and 269.0.
The adjusting method comprises the steps of firstly obtaining the planeness of a plurality of measuring points to be measured on the surface of the semiconductor film, then obtaining a planeness distribution diagram of the surface of the semiconductor film according to the planeness, and then adjusting the position of a machine table according to the planeness distribution diagram, so that the planeness of the surface of the semiconductor film produced by the adjusted machine table is in a standard range. The number and the positions of the plurality of measurement points to be measured, which are acquired here, can be determined according to actual conditions, and when the number of the plurality of points is more, the position randomness is higher, and the acquired flatness distribution map is closer to the actual flatness distribution map. The standard range mentioned in the embodiment is artificially specified, and when the requirement on the flatness of the semiconductor film is high, the standard range is small; when the requirement on the flatness of the semiconductor film is not high, the standard range can be properly widened.
The adjusting method provided by the embodiment can directly adjust the machine according to the flatness distribution of the surface of the semiconductor film without continuously comparing the film thickness distribution of the semiconductor film before and after the adjustment of the machine, so that the machine can produce the semiconductor film with the flatness distribution within a standard range, and the functions of saving resources and saving manpower and physical resources are achieved.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (9)
1. A method for obtaining the flatness of a semiconductor film, comprising:
acquiring position coordinates of a plurality of measuring points on the surface of the semiconductor film;
fitting the position coordinates of the plurality of measurement points to obtain a fitted plane of the surface of the semiconductor film;
acquiring vertical distances from a plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane;
processing a plurality of vertical distances to obtain the flatness of the measurement point to be measured on the surface of the semiconductor film;
the step of processing a plurality of the vertical distances to obtain the flatness of the measurement point to be measured on the surface of the semiconductor film comprises the following steps:
obtaining an average value of a plurality of the vertical distances;
and acquiring the difference value between the vertical distance from the measurement point to be measured to the fitting plane and the average value, wherein the difference value is used for representing the flatness of the measurement point to be measured on the surface of the semiconductor film.
2. The method according to claim 1, wherein the "acquiring the position coordinates of the plurality of measurement points of the surface of the semiconductor film" comprises:
and acquiring the position coordinates of at least three measuring points of the semiconductor film, wherein the at least three measuring points are not on the same straight line.
3. The method according to claim 2, wherein fitting the position coordinates of the plurality of measurement points to obtain a fitted plane of the surface of the semiconductor film comprises: and performing plane fitting on the position coordinates of the plurality of measuring points according to a plane equation z ═ ax + by + c to obtain plane fitting parameters a, b and c, wherein the plane where the plane equation z ═ ax + by + c is located represents the fitting plane.
4. The method according to claim 3, wherein performing plane fitting on the position coordinates of the plurality of measurement points according to a plane equation z ═ ax + by + c to obtain plane fitting parameters a, b, and c "includes:
and performing plane fitting on the position coordinates of the plurality of measuring points by adopting a least square method according to a plane equation z, wherein the position coordinates are ax + by + c to obtain plane fitting parameters a, b and c.
5. The obtaining method according to claim 4, wherein obtaining the vertical distances from the fitting plane to the plurality of measurement points to be measured on the surface of the semiconductor film comprises:
projecting the plurality of measurement points to be measured onto the fitting plane to obtain a plurality of projection points, wherein each measurement point to be measured is projected in a direction perpendicular to the fitting plane, and the plurality of measurement points to be measured correspond to the plurality of projection points one to one;
and acquiring the vertical distance between the plurality of to-be-measured measuring points and the corresponding projection points to obtain the vertical distance between the plurality of to-be-measured measuring points on the surface of the semiconductor film and the fitting plane.
6. The system for acquiring the flatness of the semiconductor film is characterized by comprising an acquisition module and a processing module connected with the acquisition module;
the acquisition module is used for acquiring position coordinates of a plurality of measurement points on the surface of the semiconductor film;
the processing module is used for fitting the position coordinates of the plurality of measuring points to obtain a fitting plane of the surface of the semiconductor film;
the acquisition module is also used for acquiring the vertical distances from a plurality of measurement points to be measured on the surface of the semiconductor film to the fitting plane;
the processing module is also used for processing the vertical distances to obtain the planeness of the measuring points to be measured on the surface of the semiconductor film;
the processing module is specifically configured to obtain an average value of the plurality of vertical distances; and acquiring the difference value between the vertical distance from the measurement point to be measured to the fitting plane and the average value, wherein the difference value is used for representing the flatness of the measurement point to be measured on the surface of the semiconductor film.
7. The acquisition system of claim 6, wherein the processing module fits a plane equation of the fitted plane by a least squares method.
8. A method for adjusting a semiconductor machine, comprising:
forming a semiconductor film on the surface of a wafer on a semiconductor machine platform;
acquiring the flatness of the surface of the semiconductor film; wherein the flatness of the semiconductor film is obtained according to the method for obtaining flatness of a semiconductor film according to any one of claims 1 to 5;
and adjusting the position of the semiconductor machine according to the flatness of the semiconductor film.
9. The adjustment method according to claim 8, wherein "acquiring the flatness of the surface of the semiconductor film" includes:
acquiring a flatness distribution graph of the surface of the semiconductor film according to the flatness of the to-be-measured measuring point of the semiconductor film;
"adjusting the position of the semiconductor stage according to the flatness of the semiconductor film" includes: and adjusting the position of the machine according to the planeness distribution of the semiconductor film.
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| JPS58212811A (en) * | 1982-06-02 | 1983-12-10 | Hitachi Ltd | Method for levelling flatness |
| CN1670905A (en) * | 2004-03-18 | 2005-09-21 | 力晶半导体股份有限公司 | Method for early stage mobile management of semiconductor equipment and related system |
| CN102194655A (en) * | 2010-03-15 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for optimally adjusting console parameters in semiconductor technology |
| CN107063060A (en) * | 2017-03-30 | 2017-08-18 | 北京正木激光设备有限公司 | A kind of method and device for determining surface planarity |
| CN111312649A (en) * | 2020-02-25 | 2020-06-19 | 中芯集成电路制造(绍兴)有限公司 | Vacuum carrying platform, semiconductor machine table and film sticking device |
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2020
- 2020-12-10 CN CN202011435321.6A patent/CN112504213B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212811A (en) * | 1982-06-02 | 1983-12-10 | Hitachi Ltd | Method for levelling flatness |
| CN1670905A (en) * | 2004-03-18 | 2005-09-21 | 力晶半导体股份有限公司 | Method for early stage mobile management of semiconductor equipment and related system |
| CN102194655A (en) * | 2010-03-15 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for optimally adjusting console parameters in semiconductor technology |
| CN107063060A (en) * | 2017-03-30 | 2017-08-18 | 北京正木激光设备有限公司 | A kind of method and device for determining surface planarity |
| CN111312649A (en) * | 2020-02-25 | 2020-06-19 | 中芯集成电路制造(绍兴)有限公司 | Vacuum carrying platform, semiconductor machine table and film sticking device |
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