CN112492491B - MEMS microphone, MEMS structure and manufacturing method thereof - Google Patents
MEMS microphone, MEMS structure and manufacturing method thereof Download PDFInfo
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- CN112492491B CN112492491B CN202011531341.3A CN202011531341A CN112492491B CN 112492491 B CN112492491 B CN 112492491B CN 202011531341 A CN202011531341 A CN 202011531341A CN 112492491 B CN112492491 B CN 112492491B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
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Abstract
The application discloses a MEMS microphone, a MEMS structure and a manufacturing method thereof. The microelectromechanical structure includes: a first back plate having a first through hole; the second back plate is provided with a second through hole and is positioned on the first back plate; the vibrating membrane is positioned between the first back plate and the second back plate, and forms a first variable capacitor with the first back plate and forms a second variable capacitor with the second back plate; the first protective layer and the vibrating membrane are respectively positioned at two sides of the first back plate and used for preventing foreign matters from entering a gap between the first back plate and the vibrating membrane through the first through hole; the second protective layer and the vibrating membrane are respectively positioned at two sides of the second back plate and used for preventing foreign matters from entering a gap between the second back plate and the vibrating membrane through the second through hole; and the second connecting part is positioned on the surface of the second back plate and fixedly connected between the second protective layer and the second back plate so as to separate the second protective layer from the second back plate.
Description
Technical Field
The present application relates to the field of semiconductor device manufacturing, and more particularly, to MEMS microphones, microelectromechanical structures, and methods of manufacturing the same.
Background
Devices manufactured based on Micro Electro Mechanical Systems (MEMS) are called MEMS devices, and the MEMS devices mainly include a diaphragm and a back plate with a gap therebetween. The change of the air pressure can cause the vibration membrane to deform, and the capacitance value between the vibration membrane and the electrode plate is changed, so that the vibration membrane is converted into an electric signal to be output.
In a traditional MEMS microphone structure, the MEMS microphone mainly comprises a back plate and a vibrating membrane which are parallel plate capacitor structures, the performance improvement is limited under the condition that the size of a chip is determined, in order to improve the signal-to-noise ratio of the microphone, a double-back-plate microphone structure is adopted to output signals in a differential mode, however, a problem is introduced, the upper layer and the lower layer of the microphone structure are back plate porous structures, foreign matters such as dust particles, water, oil stains and the like can be introduced in the processing and using processes of microphone products, and if the foreign matters enter a gap between the vibrating membrane and the back plate, the foreign matters can easily cause the problem of short circuit between the vibrating membrane and the plate electrode, and further, an MEMS device can be disabled. Most of the solutions to the problems in the industry at present are to introduce a dustproof material at the package end of the back side, which has high processing cost and only plays a dustproof role at the back side of the MEMS microphone, and the front side of the MEMS microphone is not protected.
Accordingly, it is desirable to provide an improved microelectromechanical structure to improve the performance of the product.
Disclosure of Invention
In view of the above, the present invention provides an improved MEMS microphone, a MEMS structure and a method for manufacturing the same, in which a first protective layer and a second protective layer are disposed in the MEMS structure, so as to prevent foreign matters from entering a gap between a back plate and a diaphragm through holes of the two back plates, thereby improving a problem of short circuit between the back plate and the diaphragm caused by the foreign matters.
According to a first aspect of embodiments of the present invention, there is provided a microelectromechanical structure, comprising: a first back plate having at least one first through hole; the second back plate is positioned on the first back plate and is provided with at least one second through hole; the vibrating membrane is positioned between the first back plate and the second back plate, and the vibrating membrane and the first back plate form a first variable capacitor and form a second variable capacitor with the second back plate; the first protective layer and the vibrating membrane are respectively positioned at two sides of the first back plate and used for preventing foreign matters from entering a gap between the first back plate and the vibrating membrane through the first through hole; the second protective layer and the vibrating membrane are respectively positioned at two sides of the second back plate and used for preventing foreign matters from entering a gap between the second back plate and the vibrating membrane through the second through hole; and the second connecting part is positioned on the surface of the second back plate and fixedly connected between the second protective layer and the second back plate, so that the second protective layer is separated from the second back plate.
Optionally, a material of the second connection portion includes a photoresist.
Optionally, the second protective layer comprises a polytetrafluoroethylene film or a photoresist film.
Optionally, the second connection portion is located at an edge of the second back plate.
Optionally, the second connecting portion is in a plurality of divided cylinder structures.
Optionally, the protection cover further includes a plurality of pads located on the surface of the second back plate, the first back plate, the second back plate and the diaphragm are respectively electrically connected to the corresponding pads, wherein the orthographic projection of the second protection cover on the second back plate is not overlapped with at least part of the orthographic projection of each pad on the second back plate.
Optionally, the method further comprises: a substrate having opposing top and bottom surfaces and a back cavity passing through the top and bottom surfaces, wherein the first back plate is located on the top surface of the substrate and the first protective layer is located on the bottom surface of the substrate and covers the back cavity.
Optionally, the method further comprises: and the first connecting part is fixed on the bottom surface of the substrate and is connected with the first protective layer, wherein the material of the first connecting part comprises photoresist, and the first protective layer comprises a polytetrafluoroethylene film.
Optionally, the first protective layer is fixedly connected to the bottom surface of the substrate, wherein the first protective layer comprises a photoresist film.
Optionally, the first protective layer is of a non-porous structure or a porous structure; the second protective layer is of a non-porous structure or a porous structure.
Optionally, in the case that the first protective layer has a porous structure, the first protective layer has a plurality of first micropores, and the plurality of first micropores are distributed unevenly or uniformly in the first protective layer; and under the condition that the second protective layer is of a porous structure, the second protective layer is provided with a plurality of second micropores which are distributed unevenly or uniformly in the second protective layer.
Optionally, at least one of the first micro-holes is an irregularly shaped hole and at least one of the second micro-holes is an irregularly shaped hole.
Optionally, the diaphragm includes at least one air hole for communicating the first back plate and the second back plate to the gap between the diaphragms, respectively.
Optionally, the second back plate includes a second insulating layer and a second conductive layer connected to each other, the second conductive layer is far away from the diaphragm with respect to the second insulating layer, and the at least one second through hole penetrates through the second insulating layer and the second conductive layer, where an area of the second conductive layer is smaller than that of the second insulating layer, a position of the second conductive layer corresponds to the movable portion of the diaphragm, and the second connecting portion is fixedly connected to the second insulating layer.
Optionally, the method further comprises: a first support fixed on the top surface of the substrate, the first back plate being fixed on the first support, the first support defining a distance between the first back plate and the substrate, a second support located on the first support and fixed between the diaphragm and the first back plate, the second support defining a distance between the first back plate and the diaphragm; and the third supporting part is positioned on the second supporting part and fixed between the vibrating membrane and the second back plate, and the third supporting part is used for limiting the distance between the second back plate and the vibrating membrane.
Optionally, a projected area of the first support part and/or the second support part and/or the third support part on the upper surface of the substrate is not larger than an area of the upper surface of the substrate.
Optionally, the first back plate includes a first insulating layer and a first conductive layer connected to each other, the first conductive layer is close to the vibrating membrane relative to the first insulating layer, the at least one first through hole penetrates through the first insulating layer and the first conductive layer, and the micro-electromechanical structure further includes a plurality of spacers located on a surface of the vibrating membrane close to the first back plate to prevent the vibrating membrane from being adhered to the first conductive layer.
Optionally, the area of the first conductive layer is smaller than that of the first insulating layer, the position of the first conductive layer corresponds to the movable portion of the diaphragm, and the second supporting portion surrounds the first conductive layer and is fixedly connected with the first insulating layer.
According to a second aspect of embodiments of the present invention, there is provided a MEMS microphone comprising a microelectromechanical structure as described above.
According to a third aspect of the embodiments of the present invention, there is provided a method for manufacturing a micro-electromechanical structure, including: forming a first back plate, wherein the first back plate is provided with at least one first through hole; forming a second back plate on the first back plate, wherein the second back plate is provided with at least one second through hole; forming a vibrating membrane between the first back plate and the second back plate, wherein the vibrating membrane and the first back plate form a first variable capacitor, and the vibrating membrane and the second back plate form a second variable capacitor; forming a first protective layer, wherein the first protective layer and the vibrating membrane are respectively positioned at two sides of the first back plate, and the first protective layer is used for preventing foreign matters from entering a gap between the first back plate and the vibrating membrane through the first through hole; forming a second protective layer, wherein the second protective layer and the vibrating membrane are respectively positioned at two sides of the second back plate, and the second protective layer is used for preventing foreign matters from entering a gap between the second back plate and the vibrating membrane through the second through hole; and forming a second connecting part on the surface of the second back plate, wherein the second connecting part is fixedly connected between the second protective layer and the second back plate, so that the second protective layer is separated from the second back plate.
Optionally, the material of the second connection portion includes photoresist.
Optionally, the step of forming a second connection portion on the surface of the second back electrode plate includes: forming a first photoetching layer covering the second back plate; irradiating the first photoetching layer through a first mask to solidify part of the first photoetching layer; and removing the uncured part of the first photoetching layer, wherein the first photoetching layer remained on the surface of the second back polar plate is used as the second connecting part.
Optionally, the step of forming a second protective layer comprises: forming a second photoetching layer covering the second back electrode plate and the two connecting parts; irradiating the second photoetching layer through a second mask to solidify part of the second photoetching layer; and removing the uncured part of the second photoetching layer, wherein the second photoetching layer remained on the second connecting part is used as the second protective layer.
Optionally, the second connecting portion is in a plurality of separated pillar structures, and the step of irradiating the second photoresist layer through a second mask to cure part of the second photoresist layer includes: curing the second photoresist layer on the second connection portion, the step of removing the uncured portion of the second photoresist layer comprising: and removing the uncured part of the second photoetching layer by using an etching agent, wherein the etching agent is in contact with the second photoetching layer below the second protective layer through the gaps between the column structures.
Optionally, the second protective layer comprises a polytetrafluoroethylene film, and the step of forming the second protective layer comprises bonding the polytetrafluoroethylene film to the second connection portion.
Optionally, the method further comprises forming a back cavity in the substrate having opposite top and bottom surfaces, the back cavity passing through the top and bottom surfaces, wherein the first back plate is located on the top surface of the substrate, and the first protective layer is located on the bottom surface of the substrate and covers the back cavity.
Optionally, forming a first connection portion on the bottom surface of the substrate, a material of the first connection portion including a photoresist, the first protective layer including a polytetrafluoroethylene film, the forming the first protective layer including bonding the polytetrafluoroethylene film to the first connection portion.
Optionally, before forming the back cavity in the substrate, the step of forming a first protective layer comprises: forming a third photoresist layer overlying a bottom surface of the substrate; irradiating the third photoetching layer through a third mask to solidify part of the third photoetching layer; and removing uncured portions of the third lithographic layer, the third lithographic layer remaining on the bottom surface of the substrate as the first protective layer.
The micro-electromechanical structure provided by the embodiment of the invention comprises a first back plate, a second back plate and a vibrating membrane clamped between the first back plate and the second back plate, wherein a first variable capacitor and a second variable capacitor are formed by the first back plate, the second back plate and the vibrating membrane, so that the purpose of obtaining a capacitance differential output signal is achieved, and foreign matters are prevented from entering a gap between the back plates and the vibrating membrane through holes of the two back plates by arranging a first protective layer covering the first back plate and a second protective layer covering the second back plate, so that the problem of short circuit between the two back plates and the vibrating membrane in the micro-electromechanical structure caused by the foreign matters is solved.
The second connecting part is arranged on the surface of the second back plate and is fixedly connected between the second back plate and the second protective layer, and the second connecting part is used for supporting the second protective layer, so that the second protective layer is not directly contacted with the second back plate, and the influence of the second protective layer on the second back plate is reduced.
Through setting up first inoxidizing coating, second inoxidizing coating as polytetrafluoroethylene membrane or photoresist film, because the material cost of polytetrafluoroethylene and photoresist is lower and easily obtained, be favorable to under the prerequisite that sets up first inoxidizing coating, second inoxidizing coating, reduce micro electromechanical structure's whole manufacturing complexity and cost.
The second connecting portion is formed by the photoresist, and due to the fact that the material cost of the photoresist is low and easy to obtain, the whole manufacturing complexity and cost of the micro-electromechanical structure are reduced on the premise that the second connecting portion is arranged.
Under the condition that the second protective layer is the polytetrafluoroethylene film, compared with the condition that the material of the second connecting part is set to be silicon oxide, silicon nitride, polycrystalline silicon and the like, the polytetrafluoroethylene film is bonded with the second connecting part of the photoresist material more easily, and therefore the second protective layer and the second connecting part are connected more stably.
Under the condition that the second protective layer is the photoetching film, the second protective layer and the second connecting part of the photoresist material can form an integral structure, so that the stability of connection between the second protective layer and the second connecting part is further improved.
The second connecting part is arranged at the edge of the second back plate, so that the second protective layer can cover the micro-electromechanical structure as fully as possible.
By providing the second connection portions as a plurality of spaced-apart columnar structures, an etchant can be brought into contact with the second resist layer through gaps between the columnar structures when removing the uncured second resist layer below the second protective layer.
The second protective layer at least exposes at least part of the bonding pad on the surface of the second back polar plate, so that the micro-electromechanical structure is electrically connected with other circuits through the bonding pad.
Through setting up first connecting portion to make first connecting portion cover the substrate bottom surface entirely, increased the area of contact of first connecting portion with first inoxidizing coating, and then increased the steadiness between the two.
Under the condition that the first protective layer is the polytetrafluoroethylene film, the polytetrafluoroethylene film is in bonding connection with the first connecting portion, and compared with the direct bonding of the first protective layer and the substrate, the difficulty of bonding the first connecting portion and the first protective layer is obviously reduced, and the stability after bonding is improved.
By setting the material of the first protective layer as photoresist, the first protective layer can be directly formed on the substrate only by adopting a photoetching mode, so that the process of forming the first connecting part is omitted.
The first protective layer is of a non-porous structure, so that foreign matters can be comprehensively prevented from entering a gap between the first back plate and the vibrating membrane through the first through hole; the second protective layer is set to be of a non-porous structure, so that foreign matters can be prevented from entering a gap between the second back plate and the vibrating membrane through the second through hole comprehensively.
By providing the first protective layer and/or the second protective layer with a structure having a plurality of micropores, sound pressure can better reach the diaphragm through the micropores.
Through setting up a plurality of micropores with first inoxidizing coating and/or second inoxidizing coating into inhomogeneous distribution's the condition, under the prerequisite that does benefit to the acoustic pressure and reachs the vibrating diaphragm through the micropore, improved the success rate that blocks the foreign matter.
The success rate of blocking foreign matters is further improved by arranging the plurality of micropores of the first protective layer and/or the second protective layer as irregularly-shaped holes.
The first back plate and the second back plate are both arranged to be of a double-layer structure of an insulating layer and a conducting layer, and the conducting layer is arranged to correspond to the movable part of the vibrating membrane, so that parasitic capacitance is reduced.
The insulating layer is used as a supporting layer, the conducting layer is arranged above the insulating layer, the conducting layer is closer to the vibrating membrane in the first back plate, and the isolating part is arranged on the surface, close to the conducting layer, of the vibrating membrane, so that the problems that the conducting layer of the first back plate is bonded with the vibrating membrane to cause short circuit and the like are solved; in the second back plate, the insulating layer is closer to the vibrating membrane, and the conducting layer of the second back plate is directly electrically isolated from the vibrating membrane through the insulating layer.
The first back plate, the second back plate and the vibrating membrane are supported and fixed through the first supporting part, the second supporting part and the third supporting part, and meanwhile, the positions of the first back plate, the second back plate and the vibrating membrane are limited.
By making one of the first, second and third support portions smaller in size than the substrate, the firmness of the first, second and third support portions over the substrate is further increased.
In addition, compared with the scheme that the protective layer is arranged at the packaging level of the MEMS microphone, the micro-electromechanical structure provided by the embodiment of the invention has the advantages that the first protective layer and the second protective layer can be directly bonded to the micro-electromechanical structure at one time through wafer-level processing respectively, so that the process time is reduced, and the cost is reduced.
Therefore, the MEMS microphone, the MEMS structure and the manufacturing method thereof can greatly improve the performance of products and reduce the cost.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description only relate to some embodiments of the present application and are not limiting on the present application.
Fig. 1 shows a schematic perspective structure of a micro-electromechanical structure according to an embodiment of the present invention.
FIG. 2 illustrates a cross-sectional view of a micro-electromechanical structure of an embodiment of the present invention.
Fig. 3a to 7b are schematic views of a part of middle structures of a micro-electromechanical structure in a manufacturing process according to an embodiment of the invention.
Fig. 8 shows a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region, it can be directly on the other layer or region or intervening layers or regions may also be present in the structure of the device. And, if the device is turned over, one layer or region may be "under" or "beneath" another layer or region.
If the description is directed to the case of being directly on another layer or another region, the description will be given by "directly on 8230; \8230; above" or "on 8230; \8230; above and adjacent to" and so on.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
The present invention may be embodied in various forms, some examples of which are described below.
Fig. 1 shows a schematic perspective structure diagram of a micro-electromechanical structure according to an embodiment of the present invention, and fig. 2 shows a cross-sectional view of the micro-electromechanical structure according to an embodiment of the present invention.
As shown in fig. 1 and fig. 2, the micro-electromechanical structure 100 of the present invention includes: a first back plate 110, a second back plate 120, a diaphragm 130, a first protective layer 141, and a second protective layer 142. The first back plate 110 has at least one first through hole 110a. The second back plate 120 is positioned on the first back plate 110 and has at least one second through hole 120a. The diaphragm 130 is located between the first back plate 110 and the second back plate 120, wherein the diaphragm 130 and the first back plate 110 form a first variable capacitor, and the diaphragm 130 and the second back plate 120 form a second variable capacitor.
The first protective layer 141 and the diaphragm 130 are respectively located at two sides of the first back plate 110, and the first protective layer 141 is used for preventing foreign matters from entering a gap between the first back plate 110 and the diaphragm 130 through the first through hole 110a. The second protective layer 142 and the diaphragm 130 are respectively located at two sides of the second back plate 120, and the second protective layer 142 is used for preventing foreign matters from entering a gap between the second back plate 120 and the diaphragm 130 through the second through hole 120a. In the embodiment, the first protection layer 141 has a porous structure and has a plurality of first pores 141a, and the second protection layer 142 has a non-porous structure. The material of the first protective layer 141 includes a teflon film and/or a photoresist film, and the material of the second protective layer 142 includes a teflon film and/or a photoresist film, wherein the photoresist includes, but is not limited to, SU-8 photoresist.
However, the embodiment of the present invention is not limited thereto, and those skilled in the art may make other arrangements on the materials of the first protective layer 141 and the second protective layer 142 as needed, and those skilled in the art may also make the first protective layer 141 be configured as a non-porous structure and make the second protective layer 142 be configured as a porous structure having a plurality of second micropores; or both the first protective layer 141 and the second protective layer 142 are provided with a porous structure; or the first protective layer 141 and the second protective layer 142 are both configured as non-porous structures.
In some specific embodiments, in the case that the first protective layer 141 has a porous structure, the plurality of first micropores 141a are unevenly or uniformly distributed in the first protective layer 141. In the case that the second protective layer 142 has a porous structure, the plurality of second micropores are unevenly or uniformly distributed in the second protective layer 142. In the case that the first and second micro holes 141a and 141 b are regular holes, the pore diameters of the first and second micro holes 141a and 141 b are in the range of 0 to 10 μm, and the numbers of the first and second micro holes 141a and 141 b are in the range of 1 to 10000. The thickness of the first protective layer 141 ranges from 0 to 50 μm, and the thickness of the second protective layer 142 ranges from 0 to 100 μm.
In some preferred embodiments, at least one first pore 141a of the first protective layer 141 is an irregularly shaped pore, and at least one second pore of the second protective layer 142 is an irregularly shaped pore. In the case where the first and second micropores 141a and 141 are irregular pores, the length of the first and second micropores 141a and 141a may range from 0 to 10 μm.
Further, the first back plate 110 includes a first insulating layer 111 and a first conductive layer 112 connected, the first conductive layer 112 is closer to the diaphragm 130 than the first insulating layer 111, and each of the first through holes 110a penetrates the first insulating layer 111 and the first conductive layer 112. The first conductive layer 112 has a smaller area than the first insulating layer 111 and is located corresponding to the movable portion of the diaphragm 130. The second back plate 120 includes a second insulating layer 121 and a second conductive layer 122 connected to each other, the second conductive layer 122 is far from the diaphragm 130 relative to the second insulating layer 121, and each of the second through holes 120a penetrates through the second insulating layer 121 and the second conductive layer 122. The second conductive layer 122 has a smaller area than the second insulating layer 121 and is located corresponding to the movable portion of the diaphragm 130. The diaphragm 130 includes at least one air hole 130a for communicating gaps between the first and second back plates 110 and 120, respectively, to the diaphragm 130. In the present embodiment, the number of the air holes 130a is one, and is located at the center of the diaphragm 130. The materials of the first insulating layer 111 and the second insulating layer 121 include silicon nitride, and the materials of the first conductive layer 112 and the second conductive layer 122 include polysilicon. The material of the diaphragm 130 includes polysilicon. However, the embodiment of the present invention is not limited thereto, and those skilled in the art may perform other arrangements on the number and the positions of the air holes 130a as needed, and may perform other arrangements on the materials of the first back plate 110, the second back plate 120, and the diaphragm 130.
With further reference to fig. 1 and fig. 2, the micro-electromechanical structure 100 of the embodiment of the invention further includes: a plurality of spacers 150, a plurality of pads 160, a substrate 101, a first connection portion 102, a first support portion 103, a second support portion 104, a third support portion 105, and a second connection portion 106.
The spacers 150 are located on the surface of the diaphragm 130 close to the first back plate 110 to prevent the diaphragm 130 from adhering to the first conductive layer 112.
The plurality of pads 160 are located on the surface of the second back plate 120, and the first back plate 110, the second back plate 120 and the diaphragm 130 are electrically connected to the corresponding pads 160, respectively, wherein an orthographic projection of the second protective layer 142 on the second back plate 120 is not overlapped with at least a part of an orthographic projection of each pad 160 on the second back plate 120.
The substrate 101 is a silicon substrate having opposing top and bottom surfaces and a back cavity 101a through the top and bottom surfaces, wherein the first back plate 110 is located on the top surface of the substrate 101. The first connection portion 102 is fixed on the bottom surface of the substrate 101 and fixedly bonded to the first protective layer 141. In this embodiment, the material of the first protection layer 141 is a teflon film, and the material of the first connection portion 102 includes a photoresist, wherein the photoresist includes, but is not limited to, SU-8 photoresist. The thickness of the first connection portion 102 ranges from 0 to 50 micrometers. In some preferred embodiments, the first connection portion 102 entirely covers the bottom surface of the substrate 101.
In some other embodiments, in the case where the material of the first protective layer 141 is a photoresist film, the first protective layer 141 may be directly formed on the bottom surface of the substrate 101 through a coating, photolithography process, thereby omitting the structure of the first connection portion.
The first support 103 is fixed on the top surface of the substrate 101, the first back plate 110 is fixed on the first support 103, and the first support 103 serves to define a distance between the first back plate 110 and the substrate 101. The second support 104 is positioned on the first support 103 and fixed between the diaphragm 130 and the first back plate 110, and the second support 104 is used for limiting the distance between the first back plate 110 and the diaphragm 130. The third support 105 is located on the second support 104 and fixed between the diaphragm 130 and the second back plate 120, and the third support 105 is used for defining the distance between the second back plate 120 and the diaphragm 130. The first supporting portion 103 and the second supporting portion 104 are both fixedly connected to the first insulating layer 111 of the first back plate, and the third supporting portion 105 is fixedly connected to the second insulating layer 121 of the second back plate. The second supporting portion 104 surrounds the first conductive layer 112. The projected area of the first support 103 and/or the second support 104 and/or the third support 105 on the upper surface of the substrate 101 is not larger than the area of the upper surface of the substrate 101.
In this embodiment, the first supporting portion 103 is a portion left on the substrate 101 after the sacrificial layer is released, the first supporting portion 103 is located on the peripheral edge of the substrate 101, and the first back plate 110 located above the first supporting portion 103 is supported on the substrate 101 in a manner that the peripheral edge is fully supported. The second support portion 104 and the third support portion 105 are formed in a similar manner and structure to the first support portion 103, and are not repeated. The materials of the first support 103, the second support 104, and the third support 105 include silicon oxide, however, the embodiment of the invention is not limited thereto, and a person skilled in the art may make other arrangements as needed for the materials of the first support 103, the second support 104, and the third support 105 and the supporting and fixing manner among the substrate 101, the first back plate 110, the diaphragm 130, and the second back plate 20.
The second connection part 106 is located on the surface of the second back plate 120, wherein the second protective layer 142 is fixed on the second connection part 106 to separate the second protective layer 142 from the second back plate 120. The second connection part 106 is located at the edge of the second back plate 120 such that the second shield layer 142 thereon covers the entire second back plate 120 as much as possible. In the present embodiment, the material of the second connection portion 106 includes photoresist, wherein the photoresist includes but is not limited to SU-8 photoresist. The thickness range of the second connection part 106 includes 0 to 100 μm, and the orthographic area range of the second connection part 106 on the second back plate 120 includes 100 μm ^2 to 1mm ^2. In some preferred embodiments, the second connection portion 106 surrounds the second conductive layer 122 and is fixedly connected to the second insulating layer 121. The second connecting portion 106 is in the form of a plurality of spaced-apart cylindrical structures.
Fig. 3a to 7b are schematic views of a part of middle structures of a micro-electromechanical structure in a manufacturing process according to an embodiment of the invention.
As shown in fig. 3a and fig. 3b, the manufacturing process of the micro-electromechanical structure according to the embodiment of the present invention starts from a substrate 101, wherein fig. 3b is a cross-sectional view taken along line AA in fig. 3 a.
A first back plate 110 is formed on a top surface formed on the substrate 101, a vibrating membrane 130 is formed on the first back plate 110, a second back plate 120 is formed on the vibrating membrane 130, and a pad 160 is formed on the second back plate 120, wherein the pad 160 and a second conductive layer 122 in the second back plate are both located on a second insulating layer 121 of the second back plate, and the structures of the first back plate 110, the second back plate 120, the vibrating membrane 130, and the pad 160 may refer to the descriptions in fig. 1 and fig. 2, which are not repeated herein, and for better clarity of the structures, a plurality of second through holes in the second back plate 120 are not shown in fig. 3a and subsequent plan views. A sacrificial layer 109 is further formed between the substrate 101, the first back plate 110, the diaphragm 130, and the second back plate 120 for forming a first support layer, a second support layer, and a third support layer in a subsequent step.
Further, a first photoresist layer 106a is formed to cover the second insulating layer 121, the second conductive layer 122, the pad 160 and the sacrificial layer 109, as shown in fig. 4a and 4b, wherein fig. 4b is a cross-sectional view taken along line AA in fig. 4 a.
Further, the first photoetching layer is irradiated through the first mask plate so as to solidify part of the first photoetching layer; and removing the uncured part of the first photoresist layer, wherein the first photoresist layer remaining on the surface of the second back electrode plate serves as a second connection portion 106, and the second insulating layer 121, the second conductive layer 122, the bonding pad 160 and the sacrificial layer 109 are re-exposed, as shown in fig. 5a and 5b, wherein fig. 5b is a cross-sectional view taken along line AA in fig. 5a, and the second connection portion 106 has a plurality of separated pillar structures.
Further, a second photolithography layer 142a covering the second insulating layer 121, the second conductive layer 122, the pad 160, the sacrificial layer 109 and the second connection portion 106 is formed, as shown in fig. 6a and 6b, wherein fig. 6b is a cross-sectional view taken along line AA in fig. 6 a.
Further, irradiating the second photoetching layer through a second mask to solidify part of the second photoetching layer; and removing the uncured portion of the second photoresist layer, wherein the second photoresist layer remaining above the second connection portion serves as a second protective layer 142, as shown in fig. 7a and 7b, wherein fig. 7b is a cross-sectional view taken along line AA in fig. 7 a.
In this step, only the second photolithography layer located above the level of the second connection portion 106 may be cured by controlling the photolithography process parameters; when removing the uncured part of the second photoresist layer, an etchant is used to remove the uncured part of the second photoresist layer, and specifically, the etchant contacts the uncured second photoresist layer below the second protection layer 142 through the gap between the pillar structures of the second connection portion 106.
In the embodiment, the second protection layer 142 is fixed on the second connection portion 106 to separate the second protection layer 142 from the second back plate, the second conductive layer 122 and the second connection portion 106 are covered by the second protection layer 142, and the pad 160 is exposed. However, the embodiment of the present invention is not limited thereto, and those skilled in the art may make other arrangements according to the need, for example, in the case that the second protection layer is a ptfe film, the ptfe film is directly bonded to the second connection portion 106.
Further, forming a back cavity 101a in the substrate 101 and releasing the sacrificial layer form a first support layer 103, a second support layer 104, and a third support layer 105, as shown in fig. 2.
Further, a first connection portion 102 is formed on the bottom surface of the substrate 101; and bonding the first protective layer 141 and the first connection portion 102 to form the micro-electromechanical structure shown in fig. 2.
However, the embodiment of the present invention is not limited thereto, and in some other embodiments, before forming the back cavity 101a, the first protection layer 141 may be formed by coating and photolithography, for example, a third photolithography layer covering the bottom surface of the substrate is formed first; irradiating the third photoetching layer through a third mask to solidify part of the third photoetching layer; and removing uncured portions of the third lithographic layer, the third lithographic layer remaining on the bottom surface of the substrate as the first protective layer.
Fig. 8 shows a schematic structural diagram of a MEMS microphone according to an embodiment of the present invention.
As shown in fig. 8, the MEMS microphone includes: micro-electromechanical structure 100, chip structure 200, substrate 300, shell 400. The micro-electromechanical structure 100 according to the embodiment of the present invention can refer to the descriptions of fig. 1 to fig. 2, and details are not repeated herein, the chip structure 200 is, for example, an ASIC chip, and the substrate 300 is, for example, a lead frame or a PCB circuit board. In the embodiment, the micro-electromechanical structure 100 and the chip structure 200 are electrically connected through the bonding pad 150, the substrate 300 and the housing 400 are used to form an accommodating cavity, and the micro-electromechanical structure 100 and the chip structure 200 are located in the accommodating cavity.
The micro-electromechanical structure provided by the embodiment of the invention comprises a first back plate, a second back plate and a vibrating membrane clamped between the first back plate and the second back plate, wherein a first variable capacitor and a second variable capacitor are formed by the first back plate, the second back plate and the vibrating membrane, so that the purpose of obtaining a capacitance differential output signal is achieved, and foreign matters are prevented from entering a gap between the back plates and the vibrating membrane through holes of the two back plates by arranging a first protective layer covering the first back plate and a second protective layer covering the second back plate, so that the problem of short circuit between the two back plates and the vibrating membrane in the micro-electromechanical structure caused by the foreign matters is solved. Form such waterproof dustproof construction of first inoxidizing coating and second inoxidizing coating through wafer level processing, with low costs, effectual, be applicable to bulk production, can positive and negative two-sided processing simultaneously, under the circumstances that guarantees that the MEMS microphone has good SNR, the positive and negative two-sided dustproof waterproof simultaneously.
The second connecting part is arranged on the surface of the second back plate and is fixedly connected between the second back plate and the second protective layer, and the second connecting part is used for supporting the second protective layer, so that the second protective layer is not directly contacted with the second back plate, and the influence of the second protective layer on the second back plate is reduced.
Through setting up first inoxidizing coating, second inoxidizing coating as polytetrafluoroethylene membrane or photoresist film, because the material cost of polytetrafluoroethylene and photoresist is lower and easily obtained, be favorable to under the prerequisite that sets up first inoxidizing coating, second inoxidizing coating, reduce micro electromechanical structure's whole manufacturing complexity and cost.
Through adopting the photoetching glue to form the second connecting portion, because the material cost of photoetching glue is lower and easily obtained, be favorable to under the prerequisite that sets up the second connecting portion, reduce micro electromechanical structure's whole manufacturing complexity and cost, for example compare in setting up the material of second connecting portion into silicon oxide, silicon nitride, polycrystalline silicon etc. adopt the photoetching glue to form the second connecting portion and only need coat and photoetching step just can form, do not need to carry out the etching step again.
Under the condition that the second protective layer is the polytetrafluoroethylene film, compared with the condition that the material of the second connecting part is set to be silicon oxide, silicon nitride, polycrystalline silicon and the like, the polytetrafluoroethylene film is bonded with the second connecting part of the photoresist material more easily, and therefore the second protective layer and the second connecting part are connected more stably.
Under the condition that the second protective layer is the photoetching film, the second protective layer and the second connecting part of the photoresist material can form an integral structure, and the stability of connection between the second protective layer and the second connecting part is further improved.
The second connecting part is arranged at the edge of the second back plate, so that the second protective layer can cover the micro-electromechanical structure as fully as possible.
By providing the second connection portions as a plurality of partitioned columnar structures, when removing the uncured second resist layer below the second protective layer, the etchant can be made to contact the second resist layer through gaps between the columnar structures.
The second protective layer at least exposes at least part of the bonding pad on the surface of the second back polar plate, so that the micro-electromechanical structure is electrically connected with other circuits through the bonding pad.
Through setting up first connecting portion to make first connecting portion cover the substrate bottom surface entirely, increased the area of contact of first connecting portion with first inoxidizing coating, and then increased the steadiness between the two.
Under the condition that the first protective layer is the polytetrafluoroethylene film, the polytetrafluoroethylene film is in bonding connection with the first connecting portion, and compared with the direct bonding of the first protective layer and the substrate, the difficulty of bonding the first connecting portion and the first protective layer is obviously reduced, and the stability after bonding is improved.
By setting the material of the first protective layer as photoresist, the first protective layer can be directly formed on the substrate only by adopting a photoetching mode, so that the process of forming the first connecting part is omitted.
The first protective layer is of a non-porous structure, so that foreign matters can be completely prevented from entering a gap between the first back plate and the vibrating membrane through the first through hole; the second protective layer is set to be of a non-porous structure, so that foreign matters can be completely prevented from entering a gap between the second back plate and the vibrating membrane through the second through hole.
By providing the first protective layer and/or the second protective layer with a structure having a plurality of micropores, sound pressure can better reach the diaphragm through the micropores.
Through setting up a plurality of micropores with first inoxidizing coating and/or second inoxidizing coating into inhomogeneous distribution's the condition, under the prerequisite that does benefit to the acoustic pressure and reachs the vibrating diaphragm through the micropore, improved the success rate that blocks the foreign matter.
The success rate of blocking foreign matters is further improved by arranging the plurality of micropores of the first protective layer and/or the second protective layer into irregularly-shaped holes.
The first back plate and the second back plate are both arranged to be of a double-layer structure of an insulating layer and a conducting layer, and the conducting layer is arranged to correspond to the movable part of the vibrating membrane, so that parasitic capacitance is reduced.
The insulating layer is used as a supporting layer, the conducting layer is arranged above the insulating layer, the conducting layer is closer to the vibrating membrane in the first back plate, and the isolating part is arranged on the surface, close to the conducting layer, of the vibrating membrane, so that the problems of short circuit and the like caused by adhesion of the conducting layer of the first back plate and the vibrating membrane are reduced; in the second back plate, the insulating layer is closer to the vibrating membrane, and the conducting layer of the second back plate is directly electrically isolated from the vibrating membrane through the insulating layer.
The first back plate, the second back plate and the vibrating membrane are supported and fixed through the first supporting part, the second supporting part and the third supporting part, and meanwhile, the positions of the first back plate, the second back plate and the vibrating membrane are limited.
By making one of the first support, the second support and the third support smaller than the substrate, the stability of the first support, the second support and the third support over the substrate is further increased.
Through set up the gas pocket on the vibrating diaphragm, be favorable to preventing that the vibrating diaphragm deformation is too big and lead to the vibrating diaphragm to damage, the problem of inefficacy.
In addition, compared with the scheme that the protective layer is arranged at the packaging level of the MEMS microphone, the micro-electromechanical structure provided by the embodiment of the invention has the advantages that the first protective layer and the second protective layer can be directly bonded to the micro-electromechanical structure at one time through wafer-level processing respectively, so that the process time is reduced, and the cost is reduced.
Therefore, the MEMS microphone, the MEMS structure and the manufacturing method thereof can greatly improve the performance of products and reduce the cost.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, the person skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present invention have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to fall within the scope of the invention.
Claims (19)
1. A method of fabricating a microelectromechanical structure, comprising:
forming a first back plate, wherein the first back plate is provided with at least one first through hole;
forming a vibrating membrane on the first back plate, and forming a second back plate on the vibrating membrane, wherein the second back plate is provided with at least one second through hole; the vibrating membrane and the first back plate form a first variable capacitor, and the vibrating membrane and the second back plate form a second variable capacitor;
forming a first protective layer, wherein the first protective layer and the vibrating membrane are respectively positioned at two sides of the first back plate, and the first protective layer is used for preventing foreign matters from entering a gap between the first back plate and the vibrating membrane through the first through hole;
forming a second connecting part in a plurality of separation cylinder structures on the surface of the second back polar plate, wherein the steps of the second connecting part comprise:
forming a first photoetching layer covering the second back plate;
irradiating the first photoetching layer through a first mask to solidify part of the first photoetching layer; and removing the uncured part of the first photoetching layer, wherein the first photoetching layer remained on the surface of the second back polar plate is used as the second connecting part;
forming a second protective layer, wherein the second protective layer and the vibrating membrane are respectively positioned at two sides of the second back plate, the second protective layer is used for blocking foreign matters from entering a gap between the second back plate and the vibrating membrane through the second through hole, and the step comprises the following steps: forming a second photoetching layer covering the second back electrode plate and the second connecting part; irradiating the second photoetching layer through a second mask to solidify part of the second photoetching layer; and removing the uncured part of the second photoetching layer, wherein the second photoetching layer reserved on the second connecting part is used as the second protective layer, at least part of a bonding pad positioned on the surface of the second back polar plate is exposed by the second protective layer, the second connecting part is fixedly connected between the second protective layer and the second back polar plate so as to separate the second protective layer from the second back polar plate, and the second protective layer is of a non-porous structure.
2. The method of manufacturing of claim 1, wherein irradiating the second lithographic layer through a second reticle to cure portions of the second lithographic layer comprises: curing the second lithography layer on the second connection portion;
the step of removing the uncured part of the second lithography layer comprises: and removing the uncured part of the second photoetching layer by using an etching agent, wherein the etching agent is in contact with the second photoetching layer below the second protective layer through the gaps between the column structures.
3. The method of manufacturing of claim 1, further comprising forming a back cavity in a substrate having opposing top and bottom surfaces, the back cavity passing through the top and bottom surfaces,
wherein the first back plate is located on the top surface of the substrate, and the first protective layer is located on the bottom surface of the substrate and covers the back cavity.
4. The method of manufacturing of claim 3, wherein forming a first protective layer before forming the back cavity in the substrate comprises:
forming a third photoresist layer overlying a bottom surface of the substrate;
irradiating the third photoetching layer through a third mask to solidify part of the third photoetching layer; and
removing uncured portions of the third photolithographic layer, the third photolithographic layer remaining on the bottom surface of the substrate as the first protective layer.
5. A microelectromechanical structure made using the method of manufacturing of any of claims 1 to 4, comprising:
a first back plate having at least one first through hole;
the second back plate is positioned on the first back plate and is provided with at least one second through hole;
the vibrating membrane is positioned between the first back plate and the second back plate, and the vibrating membrane and the first back plate form a first variable capacitor and form a second variable capacitor with the second back plate;
the first protective layer and the vibrating membrane are respectively positioned on two sides of the first back plate and used for preventing foreign matters from entering a gap between the first back plate and the vibrating membrane through the first through hole;
the second protective layer and the vibrating membrane are respectively positioned on two sides of the second back plate and used for preventing foreign matters from entering a gap between the second back plate and the vibrating membrane through the second through hole; and
the second connecting part is positioned on the surface of the second back plate and fixedly connected between the second protective layer and the second back plate so as to separate the second protective layer from the second back plate;
the second protective layer comprises a photoresist film, and the material of the second connecting part comprises photoresist;
the second connecting part is of a plurality of separated cylinder structures, and the second protective layer is of a non-porous structure;
the second protective layer exposes at least a portion of the bonding pads located on the surface of the second back electrode plate.
6. The microelectromechanical structure of claim 5, wherein the second connection is located at an edge of the second back plate.
7. The microelectromechanical structure of claim 5, further comprising a plurality of the pads, the first back plate, the second back plate, and the diaphragm being electrically connected to the corresponding pads, respectively;
wherein an orthographic projection of the second protective layer on the second back plate is not coincident with at least part of an orthographic projection of each bonding pad on the second back plate.
8. The microelectromechanical structure of claim 5, further comprising: a substrate having opposing top and bottom surfaces and a back cavity through the top and bottom surfaces;
wherein the first back plate is located on the top surface of the substrate, and the first protective layer is located on the bottom surface of the substrate and covers the back cavity.
9. The microelectromechanical structure of claim 8, further comprising: a first connection portion fixed on the bottom surface of the substrate and connected to the first protective layer;
wherein the material of the first connection portion comprises photoresist.
10. The microelectromechanical structure of claim 8, wherein the first protective layer is fixedly coupled to the bottom surface of the substrate, wherein the first protective layer comprises a photoresist film.
11. A microelectromechanical structure of any of claims 5-10, characterized in that the first protective layer is a non-porous structure or a porous structure.
12. The microelectromechanical structure of claim 11, wherein, in the case that the first protective layer is a porous structure, the first protective layer has a plurality of first pores that are distributed non-uniformly or uniformly in the first protective layer;
and under the condition that the second protective layer is of a porous structure, the second protective layer is provided with a plurality of second micropores which are distributed unevenly or uniformly in the second protective layer.
13. The microelectromechanical structure of claim 12, wherein at least one of the first micro-holes is an irregularly shaped hole and at least one of the second micro-holes is an irregularly shaped hole.
14. A microelectromechanical structure of any of claims 5-10, wherein the second back plate comprises a second insulating layer and a second conductive layer coupled to each other, the second conductive layer being remote from the diaphragm with respect to the second insulating layer, the at least one second via passing through the second insulating layer and the second conductive layer;
the area of the second conductive layer is smaller than that of the second insulating layer, the position of the second conductive layer corresponds to that of the movable portion of the vibrating membrane, and the second connecting portion is fixedly connected with the second insulating layer.
15. The microelectromechanical structure of claim 5, further comprising:
a first support fixed on a top surface of a substrate, the first back plate being fixed on the first support, the first support for defining a distance between the first back plate and the substrate;
the second supporting part is positioned on the first supporting part and fixed between the vibrating membrane and the first back plate, and the second supporting part is used for limiting the distance between the first back plate and the vibrating membrane; and
and the third supporting part is positioned on the second supporting part and fixed between the vibrating membrane and the second back plate, and the third supporting part is used for limiting the distance between the second back plate and the vibrating membrane.
16. The microelectromechanical structure of claim 15, characterized in that the projected area of the first support and/or the second support and/or the third support on the upper surface of the substrate is not larger than the area of the upper surface of the substrate.
17. The microelectromechanical structure of claim 15, wherein the first back plate comprises a first insulating layer and a first conductive layer connected to each other, the first conductive layer being adjacent to the diaphragm with respect to the first insulating layer, and the at least one first via passes through the first insulating layer and the first conductive layer;
the micro-electromechanical structure further comprises a plurality of spacers, and the spacers are located on the surface, close to the first back plate, of the vibrating membrane so as to prevent the vibrating membrane from being adhered to the first conducting layer.
18. The mems structure of claim 17, wherein the first conductive layer has a smaller area than the first insulating layer and is located corresponding to the movable portion of the diaphragm, and the second support portion surrounds the first conductive layer and is fixedly connected to the first insulating layer.
19. A MEMS microphone comprising a microelectromechanical structure of any of claims 5 to 18.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281659A (en) * | 2013-05-03 | 2013-09-04 | 歌尔声学股份有限公司 | Micro-electro-mechanical-system (MEMS) microphone and manufacturing method thereof |
| CN206341428U (en) * | 2016-10-25 | 2017-07-18 | 瑞声科技(新加坡)有限公司 | Mems microphone |
| CN107105378A (en) * | 2017-06-05 | 2017-08-29 | 歌尔股份有限公司 | MEMS chip, microphone and preparation method and method for packing |
| CN207665214U (en) * | 2017-11-14 | 2018-07-27 | 山东共达电声股份有限公司 | A kind of microphone sensor and microphone |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123827B (en) * | 2006-08-11 | 2011-11-09 | 中国科学院声学研究所 | Adhesion preventive silicon capacitance sound transmitter chip and its making method |
| JP2010272447A (en) * | 2009-05-25 | 2010-12-02 | Seiko Epson Corp | Organic el device, manufacturing method of organic el device and electronic equipment |
| CN102264025A (en) * | 2011-01-12 | 2011-11-30 | 瑞声声学科技(深圳)有限公司 | microphone manufacturing method |
| US9584889B2 (en) * | 2013-08-27 | 2017-02-28 | Infineon Technologies Ag | System and method for packaged MEMS device having embedding arrangement, MEMS die, and grille |
| US9264832B2 (en) * | 2013-10-30 | 2016-02-16 | Solid State System Co., Ltd. | Microelectromechanical system (MEMS) microphone with protection film and MEMS microphonechips at wafer level |
| EP3243337B1 (en) * | 2015-01-05 | 2020-02-05 | Goertek Inc. | Microphone with dustproof through holes |
| CN204652659U (en) * | 2015-05-29 | 2015-09-16 | 歌尔声学股份有限公司 | A kind of differential capacitance type MEMS microphone |
| US10110981B2 (en) * | 2015-06-30 | 2018-10-23 | W. L. Gore & Associates, Inc. | Vibro acoustic cover using expanded PTFE composite |
| CN105307092B (en) * | 2015-12-04 | 2018-03-23 | 歌尔股份有限公司 | MEMS microphone, the integrated morphology of environmental sensor and manufacture method |
| CN109151689A (en) * | 2017-06-27 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
| DE102017115405B3 (en) * | 2017-07-10 | 2018-12-20 | Epcos Ag | MEMS microphone with improved particle filter |
| CN110902642A (en) * | 2018-09-17 | 2020-03-24 | 新科实业有限公司 | MEMS package and method of manufacturing the same |
-
2020
- 2020-12-22 CN CN202011531341.3A patent/CN112492491B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281659A (en) * | 2013-05-03 | 2013-09-04 | 歌尔声学股份有限公司 | Micro-electro-mechanical-system (MEMS) microphone and manufacturing method thereof |
| CN206341428U (en) * | 2016-10-25 | 2017-07-18 | 瑞声科技(新加坡)有限公司 | Mems microphone |
| CN107105378A (en) * | 2017-06-05 | 2017-08-29 | 歌尔股份有限公司 | MEMS chip, microphone and preparation method and method for packing |
| CN207665214U (en) * | 2017-11-14 | 2018-07-27 | 山东共达电声股份有限公司 | A kind of microphone sensor and microphone |
Non-Patent Citations (2)
| Title |
|---|
| Design and Implementation of a Novel Skull Vibration Sensing Module for Bone Conduction Microphone;Bo-Cheng You;《 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS)》;20200406;全文 * |
| 具微尘抑制机制之超音波微换能组件封装设计;张兴政;《电子工业专用设备》;20060131;全文 * |
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