KR101550636B1 - Micro phone and method manufacturing the same - Google Patents

Micro phone and method manufacturing the same Download PDF

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Publication number
KR101550636B1
KR101550636B1 KR1020140126788A KR20140126788A KR101550636B1 KR 101550636 B1 KR101550636 B1 KR 101550636B1 KR 1020140126788 A KR1020140126788 A KR 1020140126788A KR 20140126788 A KR20140126788 A KR 20140126788A KR 101550636 B1 KR101550636 B1 KR 101550636B1
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KR
South Korea
Prior art keywords
piezoelectric
layer
electrode
disposed
substrate
Prior art date
Application number
KR1020140126788A
Other languages
Korean (ko)
Inventor
유일선
김현수
Original Assignee
현대자동차 주식회사
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Application filed by 현대자동차 주식회사 filed Critical 현대자동차 주식회사
Priority to KR1020140126788A priority Critical patent/KR101550636B1/en
Priority to US14/551,014 priority patent/US9693149B2/en
Priority to DE102014224170.7A priority patent/DE102014224170A1/en
Priority to CN201410710074.4A priority patent/CN105704629B/en
Application granted granted Critical
Publication of KR101550636B1 publication Critical patent/KR101550636B1/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

A microphone according to an embodiment of the present invention includes a substrate including a through hole, a vibrating part disposed on the substrate, covering the through hole, and a fixed part disposed on the vibrating part, Wherein the vibrating portion includes a first portion and a second portion disposed on the through hole and a third portion disposed on the substrate, the first portion and the third portion being spaced apart from each other And the second portion connects the first portion and the third portion, and includes the first piezoelectric portion and the second piezoelectric portion.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a microphone,

The present invention relates to a microphone and a method of manufacturing the same.

[0002] A microphone converts voice into an electrical signal. Recently, the microphone has become smaller and smaller, and microphones using micro electro mechanical system (MEMS) technology are being developed.

Such MEMS microphones are more resistant to moisture and heat than conventional electret condenser microphones (ECMs), and can be miniaturized and integrated with a signal processing circuit.

On the other hand, among the specifications required for a high performance microphone, the maximum input sound pressure (AOP), the sensitivity, and the signal-to-noise ratio (SNR) have a trade-off relationship with each other. As a result, a microphone with a high sensitivity has a limitation on detection of a loud sound due to a low maximum input sound pressure, while a microphone with a low sensitivity has a high maximum sound pressure to be able to detect a loud sound. However, have.

A problem to be solved by the present invention is to improve a sound pressure measurement range of an input microphone.

A microphone according to an embodiment of the present invention includes a substrate including a through hole, a vibrating part disposed on the substrate, covering the through hole, and a fixed part disposed on the vibrating part, Wherein the vibrating portion includes a first portion and a second portion disposed on the through hole and a third portion disposed on the substrate, the first portion and the third portion being spaced apart from each other And the second portion connects the first portion and the third portion, and includes the first piezoelectric portion and the second piezoelectric portion.

The first portion, the second portion, and the third portion may include a first insulating film, a second insulating film, and a diaphragm disposed between the first insulating film and the second insulating film, respectively.

The first piezoelectric portion may be disposed below the first insulating film, and the second piezoelectric portion may be disposed over the second insulating film.

The first piezoelectric portion may include a first piezoelectric lower electrode, a first piezoelectric upper electrode, and a first piezoelectric layer disposed between the first piezoelectric lower electrode and the first piezoelectric upper electrode.

The second piezoelectric layer may include a second piezoelectric bottom electrode, a second piezoelectric top electrode, and a second piezoelectric layer disposed between the second piezoelectric bottom electrode and the second piezoelectric top electrode.

The diaphragm may comprise polysilicon or a conductive material.

The substrate may be made of silicon.

The microphone according to an embodiment of the present invention may further include a supporting layer disposed on the third portion and supporting the fixed electrode.

A method of manufacturing a microphone according to an embodiment of the present invention includes forming a depression on a substrate, forming an oxide film on the substrate, forming a vibrating portion on the oxide film, separating the vibrating portion from the vibrating portion, , Forming a fixed electrode including a plurality of air inlets, and etching a back surface of the substrate and the oxide film to form a through hole exposing a part of the oscillating portion, wherein the oscillating portion is formed on the through hole And a third portion located on the substrate, the first portion and the third portion being spaced apart from each other, the second portion being spaced apart from the first portion and the second portion, And a first piezoelectric part and a second piezoelectric part.

The step of forming the vibrating part may include forming the first piezoelectric part on the oxide film in the depression, forming a first insulating film, a vibration film and a second insulating film on the oxide film and the first piezoelectric part in order, and then patterning And forming the second piezoelectric portion on the second insulating film in a portion corresponding to the first piezoelectric portion.

The step of forming the fixed electrode may include forming a sacrificial layer on the vibrating part, forming a metal layer on the sacrificial layer, patterning the metal layer, and removing a part of the sacrificial layer .

The substrate may be formed using silicon.

As described above, according to the embodiment of the present invention, the stress of the piezoelectric part can be adjusted by arranging the piezoelectric part in the vibration part in a double manner, so that it is possible to actively detect the stress according to the low and high sound pressure introduced from the outside.

Accordingly, the microphone according to the present embodiment can improve the measuring range according to the sound pressure level of the incoming sound pressure.

1 is a schematic cross-sectional view of a microphone according to an embodiment of the present invention.
2 is a plan view schematically showing a vibrating portion of the microphone of FIG.
3 to 7 are views showing a method of manufacturing a microphone according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Also, when a layer is referred to as being "on" another layer or substrate, it may be formed directly on another layer or substrate, or a third layer may be interposed therebetween.

1 and 2, a microphone according to an embodiment of the present invention will be described.

FIG. 1 is a schematic cross-sectional view of a microphone according to an embodiment of the present invention, and FIG. 2 is a plan view schematically showing a vibration part of the microphone of FIG.

1 and 2, the microphone according to the present embodiment includes a substrate 110, a vibration unit 200, and a fixed electrode 180.

The substrate 110 may be formed of silicon and has a through hole 120 formed therein.

A vibrating unit 200 is disposed on the substrate 110. The vibrating part 200 covers the through hole 120. An oxide film 130 is disposed between the substrate 110 and the vibration unit 200.

The vibrating portion 200 includes a first portion 150, a second portion 155, and a third portion 158. The first portion 150 and the third portion 158 are spaced apart from each other. The first portion 150 is disposed on the through hole 120 and the third portion 158 is disposed on the substrate 110. The second portion 155 is disposed on the through hole 120 and connects the first portion 150 and the third portion 158 together.

The first portion 150 and the third portion 158 include a first insulating film 151, a vibration film 152, and a second insulating film 153. The diaphragm 152 may be made of polysilicon. In addition, the vibration film 152 may be made of a conductive material. The vibration film 152 is disposed between the first insulating film 151 and the second insulating film 153. The first insulating film 151 of the third portion 158 is disposed on the oxide film 130.

The second portion 155 includes a first insulating film 151, a vibration film 152, and a second insulating film 153. The second portion 155 further includes a first piezoelectric portion 140 and a second piezoelectric portion 160.

The first piezoelectric layer 140 is disposed under the first insulating layer 151 and includes a first piezoelectric lower electrode 141, a first piezoelectric layer 142, and a first piezoelectric upper electrode 143. The first piezoelectric layer 142 is made of a piezoelectric material such as lead zirconate titanate (PZT), barium titanate (BaTiO 3 ), and Rochelle salt. The first piezoelectric lower electrode 141 and the first piezoelectric upper electrode (143). The first piezoelectric upper electrode 143 is in contact with the first insulating film 151.

The second piezoelectric layer 160 is disposed on the second insulating layer 153 and includes a second piezoelectric lower electrode 161, a second piezoelectric layer 162, and a second piezoelectric upper electrode 163. The second piezoelectric layer 162 is made of a piezoelectric material such as lead zirconate titanate (PZT), barium titanate (BaTiO 3 ), and Rochelle salt. The second piezoelectric bottom electrode 161 and the second piezoelectric top electrode (163). The second piezoelectric lower electrode 161 is in contact with the second insulating film 153.

The first portion 150 and the second portion 155 of the vibrating portion 200 are exposed by the through hole 120 formed in the substrate 110. The first portion 150 and the second portion 155 155 are vibrated according to the sound transmitted from the outside.

A fixed electrode 180 spaced apart from the vibrating unit 200 is disposed on the vibrating unit 200. The fixed electrode 180 is disposed on the support layer 172 and is fixed. The support layer 172 is disposed on the third portion 158 of the vibration portion 200 and supports the fixed electrode 180.

An air layer 171 is formed between the fixed electrode 180 and the first portion 150 and the second portion 155 of the vibrating portion 200 so that the fixed electrode 180 and the first The portion 150 and the second portion 155 are spaced apart by a predetermined distance. A plurality of air inlets 181 are disposed in the fixed electrode 180.

Sound from the outside flows through the air inlet 181 formed in the fixed electrode 180 to excite the vibrating part 200, and the vibrating part 200 vibrates. At this time, the first portion 150 and the second portion 155 of the vibration portion 200 disposed on the through hole 120 are vibrated.

The first portion 150 and the second portion 155 of the vibration portion 200 are vibrated by the sound from the outside so that the gap between the first portion 150 of the vibration portion 200 and the fixed electrode 180 The interval is changed. The electrostatic capacity between the diaphragm 152 of the first portion 150 and the fixed electrode 180 is changed and the electrostatic capacitance is changed by the signal (not shown) connected to the vibration unit 200 It is possible to convert the electric signal into a signal from a processing circuit (not shown) to sense sound from the outside.

In this embodiment, the second portion 155 of the vibration unit 200 includes the first piezoelectric unit 140 and the second piezoelectric unit 160, and the first piezoelectric unit 140 and the second piezoelectric unit 160, The second portion 155 of the vibration portion 200 may be selectively stressed using the front portion 160 to adjust the rigidity of the second portion 155 of the vibration portion 200. [

The incoming sound from outside can be loud or small.

The gap between the first part 150 of the vibration part 200 and the fixed electrode 180 is changed to the first part 150 according to the change The capacitance between the diaphragm 152 and the fixed electrode 180 is measured to sense the sound.

A voltage is applied to the first piezoelectric portion 140 and the second piezoelectric portion 160 of the second portion 155 of the vibration unit 200 when a small sound is introduced from the outside, So as to apply stress to the first piezoelectric portion 140 and the second piezoelectric portion 160.

Applying a voltage to the first piezoelectric part 140 applies a voltage to the first piezoelectric lower electrode 141 and the first piezoelectric upper electrode 143. At this time, stress is applied to the first piezoelectric lower electrode 141 and the first piezoelectric layer 142 disposed in the first piezoelectric upper electrode 143. [

Applying a voltage to the second piezoelectric part 160 applies a voltage to the second piezoelectric lower electrode 161 and the second piezoelectric upper electrode 163. [ At this time, stress is applied to the second piezoelectric layer 162 disposed in the second piezoelectric lower electrode 161 and the second piezoelectric upper electrode 163.

At this time, since the first piezoelectric part 140 and the second piezoelectric part 160 are electrically insulated from the diaphragm 152 through the first insulating film 151 and the second insulating film 153, Even if a voltage is applied to the front portion 140 and the second piezoelectric portion 160, the influence is not exerted on the diaphragm 152.

When a stress is applied to the first piezoelectric part 140 and the second piezoelectric part 160 of the second part 155 of the vibration part 200, the spring constant of the second part 155 of the vibration part 200 becomes And the resonance frequency is decreased. Therefore, even when a small sound is introduced from the outside, it is easy to sense the sound by measuring the change in capacitance between the diaphragm 152 of the first portion 150 and the fixed electrode 180. [

As described above, in the present embodiment, the second portion 155 of the vibration portion 200 includes the first piezoelectric portion 140 and the second piezoelectric portion 160, and the second portion 155 of the vibration portion 200 155, it is possible to actively detect the stress according to the level of the negative pressure introduced from the outside.

Accordingly, the microphone according to the present embodiment can improve the measuring range according to the sound pressure level of the incoming sound pressure.

Hereinafter, a method of manufacturing a microphone according to an embodiment of the present invention will be described with reference to FIGS. 3 to 7 and FIG.

3 to 7 are views showing a method of manufacturing a microphone according to an embodiment of the present invention.

Referring to FIG. 3, after the substrate 110 is prepared, a plurality of depressions 111 are formed in the substrate 110. Next, an oxide film 130 is formed on the substrate 110. Here, the substrate 110 may be made of silicon.

Referring to FIG. 4, a first piezoelectric part 140 including a first piezoelectric lower electrode 141, a first piezoelectric layer 142, and a first piezoelectric upper electrode 143 is formed on an oxide film 130. The first piezoelectric part 140 is formed on the oxide film 130 in the depression 111 of the substrate 110.

The first piezoelectric part 140 is formed by sequentially forming a first piezoelectric lower electrode film, a first piezoelectric film, and a first piezoelectric upper electrode film on the oxide film 130, and then forming a first piezoelectric lower electrode film, 1 piezoelectric upper electrode film by patterning. The first piezoelectric film is formed of a piezoelectric material such as lead zirconate titanate (PZT), barium titanate (BaTiO 3 ), and Rochelle salt.

5, a first insulating layer 151, a vibration layer 152, and a second insulating layer 153 are sequentially formed on the oxide layer 130 and the first piezoelectric layer 140. Here, the diaphragm 152 may be formed of polysilicon. In addition, the vibration film 152 may be formed of a conductive material.

At this time, the first insulating film 151, the vibration film 152 and the second insulating film 153 are patterned to form the first part 150, the second part 155, and the second part 155 of the vibration part 200, It is divided into three parts (158).

6, a second piezoelectric portion 160 including a second piezoelectric lower electrode 161, a second piezoelectric layer 162, and a second piezoelectric upper electrode 163 is formed on a second insulating layer 153 do. The second piezoelectric portion 160 is formed at a portion corresponding to the first piezoelectric portion 140.

The second piezoelectric layer 160 is formed by sequentially forming a second piezoelectric bottom electrode layer, a second piezoelectric layer, and a second piezoelectric top electrode layer on the second insulating layer 153, and then forming a second piezoelectric bottom electrode layer, And the second piezoelectric upper electrode film are patterned. The second piezoelectric film is formed of a piezoelectric material such as lead zirconate titanate (PZT), barium titanate (BaTiO 3 ), and Rochelle salt.

And a vibration portion 200 including the first portion 150, the second portion 155, and the third portion 158 is formed. Referring to FIG. 2, the first portion 150 and the third portion 158 are spaced from each other, and the second portion 155 connects the first portion 150 and the third portion 158.

The first portion 150 and the third portion 158 include a first insulating film 151, a vibration film 152, and a second insulating film 153.

The second portion 155 includes a first insulating film 151, a vibration film 152, and a second insulating film 153. The second portion 155 further includes a first piezoelectric portion 140 formed under the first insulating layer 151 and a second piezoelectric portion 160 formed on the second insulating layer 153.

Referring to FIG. 7, a sacrificial layer 170 is formed on the vibration part 200, and a fixed electrode 180 including a plurality of air inlets 181 is formed on the sacrificial layer 170.

The sacrifice layer 170 may be formed of a photosensitive material. The photosensitive material has a thermally and mechanically stable structure in the process and can be easily removed. As the sacrifice layer 170 is formed using such a photosensitive material, various forms of the sacrifice layer 170 can be realized. Alternatively, the sacrificial layer 170 may be formed of silicon oxide or silicon nitride.

The fixed electrode 180 including a plurality of air inlets 181 is formed by forming a metal layer on the sacrificial layer 170 and then patterning. Here, the metal layer may be patterned by forming a photosensitive layer on a metal layer, exposing and developing the photosensitive layer to form a photosensitive layer pattern, and then etching the metal layer using the photosensitive layer pattern as a mask.

Referring to FIG. 1, a through hole 120 is formed in a substrate 110, and a sacrificial layer 170 is partially removed to form an air layer 171 and a support layer 172.

The through hole 120 exposes the first portion 150 and the second portion 155 of the vibrating portion 200. The through hole 120 is formed by performing dry etching or wet etching on the back surface of the substrate 110. [ At this time, when etching the back surface of the substrate 110, a part of the oxide film 130 is etched to expose the first part 150 and the second part 155 of the vibration part 200.

The sacrificial layer 170 may be removed by a wet method using an etchant through the air inlet 181. [ Also, the sacrificial layer 170 may be removed by a dry method such as ashing according to an oxygen plasma (O 2 plasma) through an air inlet 181. A portion of the sacrificial layer 170 is removed through a wet or dry removal method to form an air layer 171 between the fixed electrode 180 and the first portion 150 and the second portion 155 of the vibration portion 200 , And the unremoved sacrificial layer 170 forms a supporting layer 172 for supporting the fixed electrode 180. The support layer 172 is formed in the third portion 158 of the vibration portion 200.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

110: substrate 111: depression
120: through hole 130: oxide film
140: first piezoelectric part 150: first part
155: second part 158: third part
160: second piezoelectric element 170: sacrificial layer
171: Air layer 172: Support layer
180: fixed electrode 181: air inlet
200:

Claims (15)

A substrate including a through hole,
A vibrating part disposed on the substrate and covering the through hole,
And a fixed electrode disposed on the vibrating portion and spaced apart from the vibrating portion,
The vibrating portion
A first portion and a second portion disposed on the through hole,
And a third portion disposed on the substrate,
The first portion and the third portion being spaced apart from each other,
Wherein the second portion connects the first portion and the third portion, and includes a first piezoelectric portion and a second piezoelectric portion. The method of claim 1,
Wherein the first portion, the second portion, and the third portion each include a first insulating film, a second insulating film, and a diaphragm disposed between the first insulating film and the second insulating film. 3. The method of claim 2,
The first piezoelectric portion is disposed below the first insulating film,
And the second piezoelectric portion is disposed on the second insulating film. 4. The method of claim 3,
Wherein the first piezoelectric portion includes a first piezoelectric lower electrode, a first piezoelectric upper electrode, and a first piezoelectric layer disposed between the first piezoelectric lower electrode and the first piezoelectric upper electrode. 5. The method of claim 4,
Wherein the second piezoelectric portion includes a second piezoelectric bottom electrode, a second piezoelectric top electrode, and a second piezoelectric layer disposed between the second piezoelectric bottom electrode and the second piezoelectric top electrode. 3. The method of claim 2,
Wherein the diaphragm is made of polysilicon or a conductive material. The method of claim 1,
Wherein the substrate is made of silicon. The method of claim 1,
And a support layer disposed on the third portion and supporting the fixed electrode. Forming a depression on a substrate, and then forming an oxide film on the substrate;
Forming a vibrating portion on the oxide film,
Forming a fixed electrode on the vibrating portion, the fixed electrode being spaced apart from the vibrating portion and including a plurality of air inlets; and
And etching the oxide film on the back surface of the substrate to form a through hole exposing a portion of the vibrating portion,
The vibrating portion
A first portion and a second portion located above the through hole, and
And a third portion located above the substrate,
The first portion and the third portion being spaced apart from each other,
And the second portion connects the first portion and the third portion, and includes the first piezoelectric portion and the second piezoelectric portion. The method of claim 9,
The step of forming the vibrating part
Forming the first piezoelectric portion on the oxide film in the depression,
Forming a first insulating layer, a vibration layer, and a second insulating layer on the oxide layer and the first piezoelectric layer, and then patterning the layer;
And forming the second piezoelectric portion on the second insulating film in a portion corresponding to the first piezoelectric portion. 11. The method of claim 10,
Wherein the first piezoelectric portion includes a first piezoelectric lower electrode, a first piezoelectric upper electrode, and a first piezoelectric layer disposed between the first piezoelectric lower electrode and the first piezoelectric upper electrode. 12. The method of claim 11,
Wherein the second piezoelectric portion includes a second piezoelectric bottom electrode, a second piezoelectric top electrode, and a second piezoelectric layer disposed between the second piezoelectric bottom electrode and the second piezoelectric top electrode. The method of claim 12,
Wherein the vibration film is formed using polysilicon or a conductive material. The method of claim 9,
The step of forming the fixed electrode
Forming a sacrificial layer on the vibrating portion,
Forming a metal layer on the sacrificial layer, patterning the metal layer, and
And removing a portion of the sacrificial layer. The method of claim 9,
Wherein the substrate is formed using silicon.
KR1020140126788A 2014-09-23 2014-09-23 Micro phone and method manufacturing the same KR101550636B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020140126788A KR101550636B1 (en) 2014-09-23 2014-09-23 Micro phone and method manufacturing the same
US14/551,014 US9693149B2 (en) 2014-09-23 2014-11-23 Microphone and method for manufacturing the same
DE102014224170.7A DE102014224170A1 (en) 2014-09-23 2014-11-26 MICROPHONE AND METHOD FOR MANUFACTURING THE SAME
CN201410710074.4A CN105704629B (en) 2014-09-23 2014-11-28 Microphone and the method for manufacturing the microphone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140126788A KR101550636B1 (en) 2014-09-23 2014-09-23 Micro phone and method manufacturing the same

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KR101550636B1 true KR101550636B1 (en) 2015-09-07

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US (1) US9693149B2 (en)
KR (1) KR101550636B1 (en)
CN (1) CN105704629B (en)
DE (1) DE102014224170A1 (en)

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KR101758017B1 (en) * 2016-05-20 2017-07-13 소스트 주식회사 Piezo mems microphone and thereof manufacturing method
US10313797B2 (en) 2016-09-09 2019-06-04 Hyundai Motor Company Microphone, manufacturing method and control method thereof
KR101994583B1 (en) * 2018-01-30 2019-06-28 김경원 MEMS Piezoelectric Microphone

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CN111599914B (en) * 2020-05-25 2024-01-30 中国电子科技集团公司第十三研究所 Preparation method of MEMS piezoelectric sound pressure sensing chip based on elastic beam structure

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WO2017200219A1 (en) * 2016-05-20 2017-11-23 소스트 주식회사 Piezo mems microphone and manufacturing method therefor
US10313797B2 (en) 2016-09-09 2019-06-04 Hyundai Motor Company Microphone, manufacturing method and control method thereof
KR101994583B1 (en) * 2018-01-30 2019-06-28 김경원 MEMS Piezoelectric Microphone

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CN105704629B (en) 2019-06-28
DE102014224170A1 (en) 2016-03-24
US20160088400A1 (en) 2016-03-24
CN105704629A (en) 2016-06-22
US9693149B2 (en) 2017-06-27

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