CN112490602A

CN112490602A - THz guided wave regulation and control device based on multilayer structure

Info

Publication number: CN112490602A
Application number: CN202011117635.1A
Authority: CN
Inventors: 韩天成; 邓龙江; 陈海燕; 汪晓光; 梁迪飞; 谢建良
Original assignee: University of Electronic Science and Technology of China
Current assignee: University of Electronic Science and Technology of China
Priority date: 2020-10-19
Filing date: 2020-10-19
Publication date: 2021-03-12
Anticipated expiration: 2040-10-19
Also published as: CN112490602B

Abstract

The invention belongs to the field of electromagnetism and materials, and particularly relates to a THz guided wave regulating and controlling device based on a multilayer structure. According to the invention, the free regulation and control of the THz guided wave are realized by utilizing the multi-layer high-resistance silicon chip conversion structure which is periodically arranged, a solution is provided for realizing non-interference transmission of the non-linear interconnection (translation transmission, detour transmission and bending transmission) of the complex THz system, and the miniaturization of the THz system is facilitated; and the used material is high-resistance silicon which is a natural dielectric material, so the method also has the advantages of small loss and wide frequency band.

Description

THz guided wave regulation and control device based on multilayer structure

Technical Field

The invention belongs to the field of electromagnetism and materials, and particularly relates to a THz guided wave regulating and controlling device based on a multilayer structure.

Background

THz waves (terahertz waves) have higher resolution than microwaves; THz waves have stronger penetrability (can penetrate clothes, etc.) than infrared bands. Therefore, the THz wave has important application value in the aspects of imaging, detection, medical treatment and the like, and is successfully used in a security inspection system at present. The THz wave has a relatively large attenuation when propagating in air, so a dielectric waveguide is generally selected as a transmission medium of the THz wave, and the material of the dielectric waveguide is High-density polyethylene (High-density polyethylene) and the relative dielectric constant of the dielectric waveguide is 2.34.

THz systems typically involve a large number of waveguides interconnected in a complex and diverse manner, such as between waveguides located in two different planes, between waveguides crossing each other in the same plane, and between waveguides having an angle. The THz wave is required to be perfectly transmitted under all the interconnection conditions, which is a very challenging subject and can be used for solving the problem, so that the THz wave has a wide application prospect. In order to realize perfect transmission of THz waves under the condition of nonlinear interconnection, free regulation and control of the THz waves must be realized.

Disclosure of Invention

In view of this, in order to realize perfect transmission of THz waves under the condition of nonlinear interconnection, the invention provides a THz guided wave regulation and control device based on a multilayer structure, which can solve the problems of interconnection (translational transmission) of waveguides located in two different planes, interconnection (circuitous transmission) of crossed waveguides in the same plane, and interconnection (bending transmission) of two waveguides with a certain included angle.

In order to achieve the purpose, the invention provides the following technical scheme:

the utility model provides a THz guided wave regulation and control device based on multilayer structure which characterized in that: comprises two identical planar dielectric waveguides for transmitting THz waves and a conversion structure arranged between the two planar dielectric waveguides.

The cross section and the end face of the conversion structure are matched with the cross sections and the end faces of the two planar dielectric waveguides, and waveguide interconnection between the two planar dielectric waveguides is realized; the conversion structure is filled with high-resistance silicon wafers which are arranged at equal intervals and are parallel to each other, air is filled between the high-resistance silicon wafers, and each high-resistance silicon wafer and the transmission direction of the flat dielectric waveguide form an included angle, so that the non-interference transmission of THz waves under the condition of non-linear interconnection of the flat dielectric waveguides is realized; the slab dielectric waveguide is High-density polyethylene (High-density polyethylene) with a relative dielectric constant of 2.34, the relative dielectric constant of the High-resistance silicon is 11.9, and the thickness of the High-resistance silicon wafer is 0.1 mm.

Specifically, the nonlinear interconnection condition of the slab dielectric waveguide is divided into translation transmission, detour transmission and bending transmission.

Specifically, when two planar dielectric waveguides are located on different planes and need to be subjected to translational transmission interconnection, the section of the conversion structure in the transmission direction is a parallelogram, high-resistance silicon wafers which are arranged at equal intervals are filled in a connection region in the range of the parallelogram, the included angle between each high-resistance silicon wafer and the planar dielectric waveguide transmission direction is 52.8 degrees, and the interval between the high-resistance silicon wafers is 0.255 mm.

Specifically, when two planar dielectric waveguides are in the same plane and need to be in a detour transmission interconnection, the section of the conversion structure in the transmission direction is two parallelograms which are mirror images of each other, the connection area in the range of the parallelograms is filled with high-resistance silicon wafers which are arranged at equal intervals, the included angle between each high-resistance silicon wafer and the planar dielectric waveguide in the transmission direction is 52.8 degrees, and the interval between the high-resistance silicon wafers is 0.255 mm; the triangular convex area formed by the two parallelograms which are raised relative to the plane where the two slab dielectric waveguides are located is the area where the obstacle which needs to detour is located.

Specifically, when two planar dielectric waveguides have an included angle to be subjected to bending transmission interconnection, the section of the conversion structure in the transmission direction is two triangles which are mirror images of each other, the connection region in the range of the triangles is filled with high-resistance silicon wafers which are arranged at equal intervals, the included angle between each high-resistance silicon wafer and the planar dielectric waveguide in the transmission direction is 5.1 degrees, and the interval between the high-resistance silicon wafers is 0.246 mm.

The invention realizes the free regulation and control of THz guided waves by utilizing the multi-layer high-resistance silicon chip conversion structure which is arranged periodically, provides a solution for realizing the non-interference transmission of the nonlinear interconnection of a complex THz system, and is beneficial to realizing the miniaturization of the THz system. The material used by the invention is high-resistance silicon which is a natural dielectric material, so the invention also has the advantages of small loss and wide frequency band.

Drawings

Fig. 1 is a schematic structural diagram of three transmission modes of the THz guided wave control device according to the embodiment, where (a) is translational transmission, (b) is circuitous transmission, and (c) is bending transmission.

Fig. 2 shows the translation transmission simulation result (a) of the embodiment using the transformation structure, and the comparison result (b) of the embodiment not using the transformation structure.

Fig. 3 shows the simulation result (a) of the bypass transmission using the transform structure according to the embodiment, and the comparison result (b) without using the transform structure.

Fig. 4 shows the results of a simulation of flexural transmission using a switching structure according to the example (a), and the results of a comparison without a switching structure (b).

Detailed Description

The technical solution of the present invention will be described in detail with reference to the accompanying drawings and examples.

As shown in fig. 1, three modes of the THz guided wave regulation device based on the multilayer structure are shown, namely translation, detour and bending transmission of THz waves. The three regulation and control modes are realized by arranging conversion structures and filling a plurality of layers of high-resistance silicon wafers which are periodically arranged, and air is filled between the high-resistance silicon wafers.

FIG. 1(a) is a schematic diagram of a multilayer structure-based translational transmission structure of THz guided waves, which can solve the interconnection problem between waveguides located in two different planes; during translation transmission: the thickness of the slab dielectric waveguide is 1.8mm, the length of the slab dielectric waveguide is 3mm, the distance between the slab dielectric waveguide and the slab dielectric waveguide is 3.5mm in the horizontal direction, and the distance between the slab dielectric waveguide and the slab dielectric waveguide is 1.96mm in the vertical direction, corresponding to the translation height.

FIG. 1(b) is a schematic diagram of a multilayer-structure-based bypass transmission structure of THz guided waves, which can solve the problem of layout of crossed waveguides; when bypassing transmission: the thickness of the slab dielectric waveguide is 1.8mm, the length is 3mm, and the distance in the horizontal direction is 7 mm; the height of the triangular raised area is 1.96 mm.

Fig. 1(c) is a schematic diagram of a multilayer-structure-based THz guided wave bending transmission structure, which can solve the problem of interconnection between two waveguides having a certain included angle. When the waveguide is bent for transmission, the thickness of the slab dielectric waveguide is 1.8mm, and the included angle of the bending transmission angle is 120 degrees.

The specific materials involved are: the material of the slab dielectric waveguide is high-density polyethylene; the filled multilayer structure is composed of high-resistance silicon wafers which are periodically arranged. The high-density polyethylene had a relative dielectric constant of 2.34, and the high-resistivity silicon had a relative dielectric constant of 11.9.

Simulation experiments were conducted based on commercial software, setting the simulation frequency to 140GHz, with a corresponding wavelength of 2.14 mm.

Fig. 2 shows the THz wave translation transmission simulation results of filled and unfilled high-resistance silicon wafer conversion structures. After the high-resistance silicon chip is filled, the THz wave is transmitted from the left port to the right port, so that perfect translation transmission is realized, and almost no disturbance exists, as shown in FIG. 2 (a); when the high-resistance silicon wafer is not filled, the THz wave disturbance is very serious and can hardly be transmitted to the right port, as shown in FIG. 2 (b).

Fig. 3 shows simulation results of THz wave detour transmission with and without a high-resistance silicon wafer conversion structure. After the high-resistance silicon chip is filled, the THz wave bypasses the triangular bulge in the middle and is transmitted to the right port, so that perfect bypassing transmission is realized, as shown in fig. 3 (a); when the high-resistance silicon wafer is not filled, the THz wave is very severely disturbed by the triangular protrusion and can hardly be transmitted to the right port, as shown in fig. 3 (b).

Fig. 4 shows the results of THz wave bending transmission simulation with and without a high-resistance silicon wafer conversion structure. After the high-resistance silicon chip is filled, the THz wave realizes perfect bending transmission and hardly has any disturbance, as shown in FIG. 4 (a); when the high-resistance silicon wafer is not filled, the THz wave is very disturbed by the bending structure, as shown in fig. 4 (b).

According to the embodiments and the comparative example, the THz guided wave can be freely regulated and controlled by utilizing the periodically arranged multilayer high-resistance silicon chip conversion structure, a solution is provided for realizing interference-free transmission of nonlinear interconnection of a complex THz system, and the THz system is favorably miniaturized; and the used material is high-resistance silicon which is a natural dielectric material, so the method also has the advantages of small loss and wide frequency band.

Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.

Claims

1. The utility model provides a THz guided wave regulation and control device based on multilayer structure which characterized in that: the THz wave transmission device comprises two same planar dielectric waveguides for transmitting THz waves and a conversion structure arranged between the two planar dielectric waveguides;

the cross section and the end face of the conversion structure are matched with the cross sections and the end faces of the two planar dielectric waveguides, and waveguide interconnection between the two planar dielectric waveguides is realized; the conversion structure is filled with high-resistance silicon wafers which are arranged at equal intervals and are parallel to each other, air is filled between the high-resistance silicon wafers, and each high-resistance silicon wafer and the transmission direction of the flat dielectric waveguide form an included angle, so that the non-interference transmission of THz waves under the condition of non-linear interconnection of the flat dielectric waveguides is realized; the slab dielectric waveguide is made of high-density polyethylene with a relative dielectric constant of 2.34, the relative dielectric constant of the high-resistance silicon is 11.9, and the thickness of the high-resistance silicon wafer is 0.1 mm.

2. The multilayer structure-based THz guided wave modulation device according to claim 1, wherein: the nonlinear interconnection condition of the slab dielectric waveguide is divided into translation transmission, detour transmission and bending transmission.

3. The multilayer structure-based THz guided wave modulation device according to claim 1, wherein:

when two planar dielectric waveguides are positioned on different planes and need to be translated, transmitted and interconnected, the section of the conversion structure in the transmission direction is a parallelogram, high-resistance silicon wafers which are arranged at equal intervals are filled in a connection area in the range of the parallelogram, the included angle between each high-resistance silicon wafer and the planar dielectric waveguide in the transmission direction is 52.8 degrees, and the interval between the high-resistance silicon wafers is 0.255 mm.

4. The multilayer structure-based THz guided wave modulation device according to claim 3, wherein:

during translation transmission: the thickness of the slab dielectric waveguide is 1.8mm, the length of the slab dielectric waveguide is 3mm, the distance between the slab dielectric waveguide and the slab dielectric waveguide is 3.5mm in the horizontal direction, and the distance between the slab dielectric waveguide and the slab dielectric waveguide is 1.96mm in the vertical direction, corresponding to the translation height.

5. The multilayer structure-based THz guided wave modulation device according to claim 1, wherein:

when two planar dielectric waveguides are positioned in the same plane and need to be subjected to detour transmission interconnection, the section of the conversion structure in the transmission direction is two parallelograms which form mirror images with each other, high-resistance silicon wafers which are arranged at equal intervals are filled in a connection area in the range of the parallelograms, the included angle between each high-resistance silicon wafer and the planar dielectric waveguide transmission direction is 52.8 degrees, and the interval between the high-resistance silicon wafers is 0.255 mm; the triangular convex area formed by the two parallelograms which are raised relative to the plane where the two slab dielectric waveguides are located is the area where the obstacle which needs to detour is located.

6. The multilayer structure-based THz guided wave modulation device according to claim 5, wherein:

when bypassing transmission: the thickness of the slab dielectric waveguide is 1.8mm, the length is 3mm, and the distance in the horizontal direction is 7 mm; the height of the triangular raised area is 1.96 mm.

7. The multilayer structure-based THz guided wave modulation device according to claim 1, wherein:

when two flat dielectric waveguides have an included angle to be subjected to bending transmission interconnection, the section of the conversion structure in the transmission direction is in a shape of two triangles which are in mirror image with each other, the connection region in the range of the triangles is filled with high-resistance silicon wafers which are arranged at equal intervals, the included angle between each high-resistance silicon wafer and the flat dielectric waveguide in the transmission direction is 5.1 degrees, and the interval between the high-resistance silicon wafers is 0.246 mm.

8. The multilayer structure-based THz guided wave modulation device according to claim 7, wherein:

when the waveguide is bent for transmission, the thickness of the slab dielectric waveguide is 1.8mm, and the included angle of the bending transmission angle is 120 degrees.