CN103199409A - Transmission-reflection type integrated Terahertz wave generating device and adjustment method - Google Patents
Transmission-reflection type integrated Terahertz wave generating device and adjustment method Download PDFInfo
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Abstract
The invention relates to a transmission-reflection type integrated Terahertz wave generating device and an adjustment method. The transmission-reflection type integrated Terahertz wave generating device comprises a laser light source, a lens, an overturn target material installation support, two slices of high-resistance silicon, three off-axis parabolic dish mirrors, a metal high-reflection mirror, a Terahertz detection system, a rotary base and a one-dimensional motor. Through adjustment of the rotary base and turning of the metal high-reflection mirror and the target material installation support, switching between a transmission type Terahertz wave generating test device and a reflection type Terahertz wave generating test device can be rapidly and conveniently achieved. According to the actual test situation, the angle of the target material installation support and the turning of the metal high-reflection mirror and the target material installation support are adjusted, and the rapid switching between the transmission type Terahertz wave generating test device and the reflection type Terahertz wave generating test device is achieved. In addition, through movement of the one-dimensional motor and rotation of the base, adjustment of distance between the lens and target material and adjustment of a relative incident light angle of the target material can be achieved. The transmission-reflection type integrated Terahertz wave generating device is suitable for Terahertz wave generating methods of different theories.
Description
Technical field
The present invention relates to a kind of electromagnetic wave generating technique, particularly a kind of Transflective integral type THz wave generation device and method of adjustment.
Background technology
THz wave be frequency at the electromagnetic wave of 0.1 to 10 THz scope, in electromagnetic spectrum between microwave and infrared radiation.In person in electronics, THz wave is called as millimeter wave or submillimeter wave; At optical field, its far ir ray that is otherwise known as.Its multiple unique characteristic is given in the special electromagnetic spectrum position of THz wave, so THz wave has unique advantages and great application prospect at a plurality of key areas such as physics, chemistry, electronic information, life science, material science, astronomy, atmosphere and environmental monitoring, communication radar, national security and anti-terrorisms.
At present, the generation of terahertz pulse mainly is divided into transmission-type and reflection-type two big classes.
Transmission-type THz wave producing method, as utilize photoconductive antenna to excite the method for THz wave.When a branch of ultrafast laser light beam irradiates photoconductive antenna, in photoconductive material, produce electron-hole pair, free carrier is biased electric field and accelerates, and produces the photoelectric current of transition.This fast, time-varying current can give off THz wave.Now, photoconductive antenna has become widely used Terahertz source, numerous laboratories.
Reflection-type THz wave producing method is as the method for ultrashort intense laser pulse and solid target interaction acquisition THz wave.Ultrashort intense laser pulse forms THz wave with certain incidence angle irradiation target at its minute surface reflection direction.Experiment finds, THz wave energy, polarization state are relevant with ultrashort intense laser pulse energy, polarization state and incidence angle.Compare with irradiation neutral material, gas target, the terahertz radiation peak power that ultrashort intense laser pulse and solid target interaction obtain can improve a plurality of orders of magnitude.
Generally speaking, transmission-type or reflection-type THz wave producing method are widely used at present, but experimental provision is only suitable wherein a kind of mostly, if need to adjust in experimentation, not only need accurate calculating, and the adjustment of experimental provision is also very loaded down with trivial details.Based on all not convenience experimentally, the THz wave that does not also have at present to realize the Transflective integral type produces the experimental provision appearance.
Summary of the invention
The present invention be directed to present THz wave generating technique side has only transmission-type or reflection-type wherein a kind of, if need carry out the conversion very loaded down with trivial details problem then between two types, a kind of Transflective integral type THz wave generation device and method of adjustment have been proposed, adopt turning metal high reflection mirror, have turning target installing rack and three off axis paraboloidal mirrors of rotating base, by the upset of adjusting rotating base and target installing rack and metal high reflection mirror, thereby realize that transmission-type and reflection-type THz wave produce the rapid and convenient conversion between the experimental provision.
Technical scheme of the present invention is: a kind of Transflective integral type THz wave generation device, comprise LASER Light Source, lens, turning target installing rack, first High Resistivity Si, first off axis paraboloidal mirror, the metal high reflection mirror, second off axis paraboloidal mirror, the Terahertz detection system, second High Resistivity Si, the 3rd off axis paraboloidal mirror, rotating base and one dimension motor, first High Resistivity Si of front and back position and first off axis paraboloidal mirror are positioned on the transmitted light path of target, second High Resistivity Si of front and back position and the 3rd off axis paraboloidal mirror are positioned on the reflected light path of target, lens and first off axis paraboloidal mirror, the 3rd off axis paraboloidal mirror is all confocal, focuses on behind the laser scioptics that LASER Light Source is sent on the target that is shelved on the turning target installing rack; Turning target installing rack is fixed on the rotating base, second High Resistivity Si, the 3rd off axis paraboloidal mirror, rotating base are fixed on the one dimension motor, second off axis paraboloidal mirror and first off axis paraboloidal mirror are located along the same line, receive the collimation ripple that first off axis paraboloidal mirror penetrates, the Terahertz detection system is positioned at the focus place of second off axis paraboloidal mirror, the collimation wave reflection that the THz wave that reception focuses on through second off axis paraboloidal mirror, metal high reflection mirror penetrate the 3rd off axis paraboloidal mirror is to second off axis paraboloidal mirror.
Described metal high reflection mirror is optional to be coated with the mirror that gold, silver, aluminum metal film can be realized the reflection of Terahertz wave height.
A kind of Transflective integral type THz wave generation device method of adjustment comprises Transflective integral type THz wave generation device, comprises following set-up procedure:
1) produces the transmission-type THz wave: turning target installing rack is being installed Terahertz emission target, turning target installing rack is translated into target and LASER Light Source incident light upright position, the metal high reflection mirror is turned down, capable with the collimation popin of first off axis paraboloidal mirror output, after the ultrashort laser pulse that LASER Light Source is sent focuses on target through lens, the THz wave that produces sees through first High Resistivity Si behind first off axis paraboloidal mirror collimation, focuses on through second off axis paraboloidal mirror and enters the Terahertz detection system;
2) produce the transmission-type THz wave: do not need to install target, utilize gas to produce THz wave, other are adjusted as step 1);
3) produce the reflection-type THz wave: turning target installing rack is being installed target, turning target installing rack is translated into target become the miter angle position with the LASER Light Source incident light, the metal high reflection mirror flips up, become miter angle with the collimation ripple of the 3rd off axis paraboloidal mirror output, the ultrashort laser pulse that LASER Light Source is sent is incided on the target after focusing on through lens, see through second High Resistivity Si behind the 3rd off axis paraboloidal mirror collimation in the THz wave that its minute surface reflection direction produces, reflex to second off axis paraboloidal mirror by the metal high reflection mirror, focus on through second off axis paraboloidal mirror again and enter the Terahertz detection system.
Beneficial effect of the present invention is: Transflective integral type THz wave generation device of the present invention and method of adjustment constitute simply, easily operation.In actual mechanical process, only need according to the actual experiment situation regulate the target installing rack angle and and the upset of metal high reflection mirror, just can realize that THz wave produces the adjustment of experimental provision, thereby realize that transmission-type or reflection-type THz wave produce the quick conversion between the experimental provision; In addition, by the movement of one dimension motor and the rotation of base, can realize the adjustment of distance and the relative incident angle of light of target between lens and the target; This device all is suitable for for the THz wave production method of various different principle.
Description of drawings
Fig. 1 is Transflective integral type THz wave generation device structural representation of the present invention;
The apparatus structure schematic diagram that Fig. 2 produces for transmission-type THz wave of the present invention;
The apparatus structure schematic diagram that Fig. 3 produces for reflection-type THz wave of the present invention.
Embodiment
Penetrate reflection-type integral type THz wave generation device structural representation as shown in Figure 1, by LASER Light Source 1, lens 2, turning target installing rack 3, first High Resistivity Si 4, first off axis paraboloidal mirror 5, metal high reflection mirror 6, the second off axis paraboloidal mirrors 7, Terahertz detection system 8, second High Resistivity Si, 9, the three off axis paraboloidal mirrors 10, rotating base 11 and one dimension motor 12 are formed.Wherein, first High Resistivity Si 4 and first off axis paraboloidal mirror 5 of front and back position are positioned on the transmitted light path of target, second High Resistivity Si 9 and the 3rd off axis paraboloidal mirror 10 of front and back position are positioned on the reflected light path of target, lens 2 and first off axis paraboloidal mirror 5, the 3rd off axis paraboloidal mirror 10 are all confocal, target is installed near lens 2 focus the place aheads, adjusts distance between lens and the target by the movement of one dimension motor; First High Resistivity Si 4 and second High Resistivity Si 9 work to stop pump light, transmission THz wave.Turning target installing rack 3 is fixed on the rotating base 11, is used for the adjustment of the relative incident angle of light of target; Second High Resistivity Si 9, the 3rd off axis paraboloidal mirror 10, rotating base 11 are fixed on the one dimension motor 12, and the distance that is used for the relative lens of target guarantees to collect the light path of THz wave when changing constant.Second off axis paraboloidal mirror 7 and first off axis paraboloidal mirror 5 are located along the same line, receive the collimation ripple that first off axis paraboloidal mirror 5 penetrates, Terahertz detection system 8 is positioned at the focus place of second off axis paraboloidal mirror 7, the THz wave that reception focuses on through second off axis paraboloidal mirror 7, metal high reflection mirror are that collimation wave reflection that the 3rd off axis paraboloidal mirror is penetrated is to second off axis paraboloidal mirror.
The apparatus structure schematic diagram that produces of transmission-type THz wave as shown in Figure 2, use the experiment of transmission-type THz wave generation device, A. need to install Terahertz emission target: target installing rack 3 rolls up, and metal high reflection mirror 6 is turned down, and rotary target material base 11 is to proper angle.The ultrashort laser pulse that LASER Light Source 1 is sent focuses on the back through lens 2 and target interacts, and the THz wave of generation sees through first High Resistivity Si 4 behind first off axis paraboloidal mirror, 5 collimations, focuses on through second off axis paraboloidal mirror 7 and enters Terahertz detection system 8; B. do not need to install target: as utilize air plasma to produce the experiment of THz wave, target installing rack 3 and metal high reflection mirror 6 are all turned down, and the device remainder need not any adjustment.
The apparatus structure schematic diagram that produces of reflection-type THz wave as shown in Figure 3, the experiment of using reflection-type THz wave generation device, target installing rack 3 and metal high reflection mirror 6 flip up, and install target, adjust 45 degree of target for needing.The ultrashort laser pulse that LASER Light Source 1 is sent is incided on the target after focusing on through lens 2, see through second High Resistivity Si 9 behind the 3rd off axis paraboloidal mirror 10 collimations in the THz wave that its minute surface reflection direction produces, reflex to second off axis paraboloidal mirror 7 by metal high reflection mirror 6, focus on through second off axis paraboloidal mirror 7 again and enter Terahertz detection system 8.Metal high reflection mirror 6 can be to be coated with the mirror that metal films such as gold, silver, aluminium can be realized the reflection of Terahertz wave height.
The optional box that is shaped on the sample of micro-structural or fluid sample is housed of the target of transmission-type THz wave generation device, the optional GaAs of the target of reflection-type THz wave generation device/semi-conducting materials such as arsenic gallium indium, be coated with the sample of ultrathin metallic film, specifically decide on the actual experiment operation; The angle of target and ultrashort laser pulse can be arbitrary value between the 0-90 degree, and the rotating base 11 of adjusting target installing rack 3 belows according to the actual experiment situation get final product, mixes up the accurate record in back for the first time, just can be rotated and recovers according to the base scale later on.Turning target installing rack 3 and the 3rd off axis paraboloidal mirror 10 are fixed on the one dimension motor 12, and be convenient according to the distance between requirement of experiment adjustment target and the lens 2; And in the adjustment process, target keeps relative constant with the 3rd off axis paraboloidal mirror 10 the two position.
In the example below, the experiment of utilization transmission-type THz wave generation device produces THz wave with ultrashort laser pulse and the interaction of photoconduction antenna respectively and air plasma generation THz wave is example, using the experiment of reflection-type THz wave generation device is example with ultrashort light laser and gallium arsenide interaction generation THz wave, and the THz wave of other principles produces consistent with above-mentioned implementation method.
Use the experiment of transmission-type THz wave generation device, femto-second laser output center wavelength of light is 800 nm, pulse duration is 100 fs, repetition rate 1 KHz, concrete adjustment process is as follows: A. need install Terahertz emission target: ultrashort laser pulse and photoconduction antenna interact and produce THz wave.Metal high reflection mirror 6 is turned down, and target installing rack 3 rolls up, and installs the photoconduction antenna, and rotary target material base 11 to laser vertical incides its surface.Femtosecond laser interacts with the photoconduction antenna after lens 2 focus on, and the THz wave of utilizing transient current to produce sees through first High Resistivity Si 4 behind first off axis paraboloidal mirror, 5 collimations, enters Terahertz detection system 8 through 7 focusing of second off axis paraboloidal mirror again.If will analyze the influence that the distance between lens and the photoconduction antenna produces THz wave, only need to realize by control one dimension motor 12 adjustment of the distance between the two.B. do not need to install target: air plasma produces THz wave.Metal high reflection mirror 6 and target installing rack 3 are all turned down.800 nm single-frequency femtosecond lasers excite the air plasma passage in air after lens 2 focus on, the THz wave that produces by the third-order non-linear process sees through first High Resistivity Si 4 behind first off axis paraboloidal mirror, 5 collimations, focuses on through second off axis paraboloidal mirror 7 and enters Terahertz detection system 8.If will analyze the THz wave feature that air plasma passage diverse location produces, also can roll up target installing rack 3, load onto planar substrates, movement by control one dimension motor 12 realizes the extraction of the THz wave that substrate produces air plasma passage diverse location, and recycling reflection-type device is collected detection.
Use the experiment of reflection-type THz wave generation device, femto-second laser output center wavelength of light is 800 nm, pulse duration is 100 fs, repetition rate 1 KHz, concrete adjustment process is as follows: target installing rack 3 and metal high reflection mirror 6 flip up, install gallium arsenide, femtosecond laser incides on the sample after focusing on through lens 2, adjust light path, when sample is 45 degree that experiment needs, locking rotating base 11, the while is accurately recorded the relative angle on the dish at quarter, so that accurate reduction next time sample angle.See through second High Resistivity Si 9 behind the 3rd off axis paraboloidal mirror 10 collimations in the THz wave that sample minute surface reflection direction produces, reflex to second off axis paraboloidal mirror 7 by metal high reflection mirror 6, focus on through second off axis paraboloidal mirror 7 again and enter Terahertz detection system 8.
Claims (3)
1. Transflective integral type THz wave generation device, it is characterized in that, comprise LASER Light Source (1), lens (2), turning target installing rack (3), first High Resistivity Si (4), first off axis paraboloidal mirror (5), metal high reflection mirror (6), second off axis paraboloidal mirror (7), Terahertz detection system (8), second High Resistivity Si (9), the 3rd off axis paraboloidal mirror (10), rotating base (11) and one dimension motor (12), first High Resistivity Si (4) and first off axis paraboloidal mirror (5) of front and back position are positioned on the transmitted light path of target, and second High Resistivity Si (9) and the 3rd off axis paraboloidal mirror (10) of front and back position are positioned on the reflected light path of target, lens (2) and first off axis paraboloidal mirror (5), the 3rd off axis paraboloidal mirror (10) is all confocal, focuses on the target that is shelved on the turning target installing rack (3) behind the laser scioptics (2) that LASER Light Source (1) is sent; Turning target installing rack (3) is fixed on the rotating base (11), second High Resistivity Si (9), the 3rd off axis paraboloidal mirror (10), rotating base (11) is fixed on the one dimension motor (12), second off axis paraboloidal mirror (7) is located along the same line with first off axis paraboloidal mirror (5), receive the collimation ripple that first off axis paraboloidal mirror (5) penetrates, Terahertz detection system (8) is positioned at the focus place of second off axis paraboloidal mirror (7), the collimation wave reflection that the THz wave that reception focuses on through second off axis paraboloidal mirror (7), metal high reflection mirror (6) penetrate the 3rd off axis paraboloidal mirror (10) is to second off axis paraboloidal mirror (7).
2. according to the described Transflective integral type of claim 1 THz wave generation device, it is characterized in that described metal high reflection mirror (6) is optional to be coated with the mirror that gold, silver, aluminum metal film can be realized the reflection of Terahertz wave height.
3. a Transflective integral type THz wave generation device method of adjustment comprises Transflective integral type THz wave generation device, it is characterized in that, comprises following set-up procedure:
1) produces the transmission-type THz wave: turning target installing rack (3) is being installed Terahertz emission target, turning target installing rack (3) is translated into target and LASER Light Source (1) incident light upright position, metal high reflection mirror (6) is turned down, capable with the collimation popin of first off axis paraboloidal mirror (5) output, after the ultrashort laser pulse that LASER Light Source (1) is sent focuses on target through lens (2), the THz wave that produces sees through first High Resistivity Si (4) behind first off axis paraboloidal mirror (5) collimation, focuses on through second off axis paraboloidal mirror (7) and enters Terahertz detection system (8);
2) produce the transmission-type THz wave: do not need to install target, utilize gas to produce THz wave, other are adjusted as step 1);
3) produce the reflection-type THz wave: turning target installing rack (3) is being installed target, turning target installing rack (3) is translated into target become the miter angle position with LASER Light Source (1) incident light, metal high reflection mirror (6) flips up, become miter angle with the collimation ripple of the 3rd off axis paraboloidal mirror (10) output, the ultrashort laser pulse that LASER Light Source (1) is sent is incided on the target after focusing on through lens (2), see through second High Resistivity Si (9) behind the 3rd off axis paraboloidal mirror (10) collimation in the THz wave that its minute surface reflection direction produces, reflex to second off axis paraboloidal mirror (7) by metal high reflection mirror (6), focus on through second off axis paraboloidal mirror (7) again and enter Terahertz detection system (8).
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| CN104614082A (en) * | 2014-12-10 | 2015-05-13 | 天津大学 | TeraHertz wave line width measurement device and method |
| CN105116565A (en) * | 2015-09-18 | 2015-12-02 | 首都师范大学 | Terahertz pulse width modulator device and modulation method |
| CN105866061A (en) * | 2016-03-31 | 2016-08-17 | 上海理工大学 | A differential pulse detecting apparatus for terahertz wave time domain information and a differential pulse detecting method |
| CN106483096A (en) * | 2016-11-25 | 2017-03-08 | 首都师范大学 | The system and method that laser excitation air plasma produces high intensity THz wave |
| CN106841113A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method and apparatus of Terahertz frequency range synchro measure material wave transparent reflection characteristic |
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| CN108594560A (en) * | 2018-06-21 | 2018-09-28 | 首都师范大学 | The system and method that laser excitation liquid film generates high-intensity broadband THz wave |
| CN109283537A (en) * | 2017-07-23 | 2019-01-29 | 北京遥感设备研究所 | A kind of quasi-optical heterodyne Terahertz target scattering characteristics bistatic measurement system |
| CN110376156A (en) * | 2019-07-30 | 2019-10-25 | 上海理工大学 | The THz wave spectra system that asynchronous optical sampling and double light combs integrate |
| CN110492338A (en) * | 2019-09-10 | 2019-11-22 | 北京航空航天大学 | A kind of space access type liquid cell generated for terahertz emission |
| CN110836854A (en) * | 2019-12-23 | 2020-02-25 | 赫智科技(苏州)有限公司 | Multifunctional test platform |
| CN111337430A (en) * | 2020-03-13 | 2020-06-26 | 华太极光光电技术有限公司 | Transmission type terahertz probe adjusting device and positioning method |
| CN112490602A (en) * | 2020-10-19 | 2021-03-12 | 电子科技大学 | THz guided wave regulation and control device based on multilayer structure |
| CN113514418A (en) * | 2020-04-10 | 2021-10-19 | 华太极光光电技术有限公司 | Transmission-reflection dual-purpose terahertz probe and detection method thereof |
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| CN104614082A (en) * | 2014-12-10 | 2015-05-13 | 天津大学 | TeraHertz wave line width measurement device and method |
| CN105116565A (en) * | 2015-09-18 | 2015-12-02 | 首都师范大学 | Terahertz pulse width modulator device and modulation method |
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| CN106483096A (en) * | 2016-11-25 | 2017-03-08 | 首都师范大学 | The system and method that laser excitation air plasma produces high intensity THz wave |
| CN106841113A (en) * | 2017-01-04 | 2017-06-13 | 北京环境特性研究所 | A kind of method and apparatus of Terahertz frequency range synchro measure material wave transparent reflection characteristic |
| CN109283537A (en) * | 2017-07-23 | 2019-01-29 | 北京遥感设备研究所 | A kind of quasi-optical heterodyne Terahertz target scattering characteristics bistatic measurement system |
| CN107941740A (en) * | 2017-11-10 | 2018-04-20 | 深圳市太赫兹科技创新研究院有限公司 | Transflective integrating device and spectrometer system |
| CN108594560A (en) * | 2018-06-21 | 2018-09-28 | 首都师范大学 | The system and method that laser excitation liquid film generates high-intensity broadband THz wave |
| CN110376156A (en) * | 2019-07-30 | 2019-10-25 | 上海理工大学 | The THz wave spectra system that asynchronous optical sampling and double light combs integrate |
| CN110492338A (en) * | 2019-09-10 | 2019-11-22 | 北京航空航天大学 | A kind of space access type liquid cell generated for terahertz emission |
| CN110492338B (en) * | 2019-09-10 | 2021-01-15 | 北京航空航天大学 | Space access type liquid pool for terahertz radiation generation |
| CN110836854A (en) * | 2019-12-23 | 2020-02-25 | 赫智科技(苏州)有限公司 | Multifunctional test platform |
| CN111337430A (en) * | 2020-03-13 | 2020-06-26 | 华太极光光电技术有限公司 | Transmission type terahertz probe adjusting device and positioning method |
| CN113514418A (en) * | 2020-04-10 | 2021-10-19 | 华太极光光电技术有限公司 | Transmission-reflection dual-purpose terahertz probe and detection method thereof |
| CN112490602A (en) * | 2020-10-19 | 2021-03-12 | 电子科技大学 | THz guided wave regulation and control device based on multilayer structure |
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