CN112490387A - Thin film packaging structure suitable for folding flexible display and production method - Google Patents
Thin film packaging structure suitable for folding flexible display and production method Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 151
- 239000010408 film Substances 0.000 claims abstract description 73
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 238000009792 diffusion process Methods 0.000 claims abstract description 36
- 238000005538 encapsulation Methods 0.000 claims abstract description 17
- 239000012044 organic layer Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 13
- 229920001621 AMOLED Polymers 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- -1 ammonium ions Chemical class 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000001629 suppression Effects 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 208000002564 X-linked cardiac valvular dysplasia Diseases 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 102100020970 ATP-binding cassette sub-family D member 2 Human genes 0.000 description 1
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 101100321983 Homo sapiens ABCD2 gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 101150063578 ald1 gene Proteins 0.000 description 1
- 101150023727 ald2 gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
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Abstract
The invention discloses a thin film packaging structure suitable for folding flexible display and a production method thereof, and the thin film packaging structure is characterized by comprising a first inorganic layer (1), an organic layer (3) and a second inorganic layer (2), wherein the first inorganic layer (1) and the second inorganic layer (2) are formed by alternately overlapping a diffusion barrier layer (4) and a barrier layer (5). Adopt overlapping structure to replace original first inorganic layer/second inorganic layer structure, through filming many times, reduce the internal stress of film-forming rete each time, reduce the problem that rete crack, peeling appear, multilayer structure is the integrated configuration of barrier layer + diffusion suppression layer, on satisfying the basis of encapsulation barrier property, and the key NH in preventing inorganic layerx *Diffusion of free radicals. Making a businessThe stacked packaging structure can not only prevent harmful gas in the external environment from corroding the OLED device, but also prevent the lower film in the whole structure from corroding the upper film.
Description
Technical Field
The invention relates to a thin film packaging structure suitable for folding flexible display and a production method thereof, belonging to the technical field of folding flexible AMOLED packaging.
Background
The AMOLED device is sensitive to moisture and oxygen, and after the OLED light-emitting device is manufactured, an encapsulation protective layer is required to be added above the OLED device and used for blocking moisture and oxygen in the external environment from corroding the OLED device, so that the normal display of the OLED device is ensured, and the service life of the OLED device is prolonged.
The packaging method of the AMOLED device mainly comprises UV packaging, Frit packaging, thin film packaging and the like. For the flexible AMOLED display screen body, the UV glue packaging and the Frit packaging cannot meet the requirement of flexibility due to the existence of the glass cover plate, so that only a thin film packaging (TFE) mode can be adopted.
For the thin film package, package structures such as inorganic thin film package, organic thin film package, inorganic/organic thin film package, and the like can be used. Considering the packaging effect and the feasibility of mass production, the industry mainly uses an inorganic/organic thin film packaging structure. The inorganic layer is mainly used for blocking harmful gas substances such as water vapor and oxygen, and the organic layer is mainly used for balancing the stress of the inorganic layer.
The first technical scheme is as follows: the existing thin film packaging structure adopts a CVD1-IJP-CVD2 three-layer packaging structure. CVD1 (the first inorganic layer) adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) process, the film forming type is SiNx (poly silicon nitride)/SiONx (poly silicon oxynitride)/SiOx (poly silicon oxide), and the film thickness is 0.5-1.5 um; the IJP adopts an ink-jet printing process, the film forming type is acrylic/epoxy/organic silicon generally, and the film thickness is 5-20 um; the CVD2 (second inorganic layer) adopts Plasma Enhanced Chemical Vapor Deposition (PECVD) process, the film forming type is SiNx/SiONx/SiOx, and the film thickness is 0.5-1.5 um.
The drawback of this solution is that the SiNx/sion x/SiOx thin film formed by Plasma Enhanced Chemical Vapor Deposition (PECVD) deposition process is inorganic and generally compressive. For folding flexibility, excessive internal stress is easy to generate film crack and film peeling phenomena in the bending process, so that defects are caused. Particularly, in the case of the fold-out display, when the screen is folded out, the screen is in a stretched state and is repelled by the compressive stress generated by the film formation of the film package CVD1/CVD2, and thus the abnormalities such as film crack (crack) and delamination (peeling) are more likely to occur, which causes the display failure of the screen. For the IJP process, since the ink jet printing process is adopted, in order to prevent the liquid fluidity of the film forming raw material and ensure that the position of the film forming edge is at the required position, a Dam (Dam) is generally made at the edge for stopping the flow of the film forming raw material ink, and a double Dam, i.e., an inner Dam and an outer Dam, is generally adopted. Since the height of the dam is higher than that of the non-dam region, abnormal conditions such as disconnection and excessively thin film easily occur in the climbing part of the dam in the CVD1/CVD2 film layer, and finally display failure occurs.
For the folded flexible AMOLED device, the SiX thin film used in the current CVD film layer contains ammonia (NH3) in the film forming raw material, the ammonia cannot be completely dissociated in the PECVD apparatus, and the formed radicals contain NHx *. In the multiple bending process, if the CVD film has crack, NH contained in the filmx *The radicals diffuse and react with iodide ions in the polarizer, thereby causing failure of the polarizer.
The second prior art scheme is: a multilayer packaging structure of ALD1+ CVD1/IJP/ALD2+ CVD2 is adopted. An Atomic Layer Deposition (ALD) process is used to enhance or replace CVD thin films. The ALD film forming type is AlOx/SiOx, and the film forming thickness is 30-100 nm. The CVD and IJP processes are the same as in the prior art solution.
The disadvantage of this solution is that the Atomic Layer Deposition (ALD) film formation rate is 0.1-0.3 nm/sec, which is very slow compared to the CVD film formation rate (300 nm/sec), thus causing a large delay in the tact. In addition, the types of the atomic layer deposition films are controlled and limited by precursor materials and reaction modes, the types of the selectable films are limited, and AlO is adopted in the general thermal reaction type atomic layer depositionxAlO is adopted for thin film and plasma enhanced atomic layer depositionxOr SiOxA film. The remaining technical drawbacks for the folded flexible AMOLED device are consistent with one of the prior art.
Chinese patent 201610584780.8 discloses a thin film encapsulation member of an organic light emitting diode device, comprisingAt least one inorganic rete and at least one deck organic rete, inorganic rete with organic rete sets up in turn, its characterized in that: the material of the inorganic film layer is selected from one or the combination of more of silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, silicon oxycarbide and silicon oxycarbonitride; the material of the organic film layer is selected from any one or a combination of a plurality of acryl-based polymers, silicon-based polymers or epoxy-based polymers. The scheme can prevent NH to a certain degreex *The free radicals diffuse, but the effect is still not ideal.
Disclosure of Invention
The invention aims to provide a film packaging structure suitable for folding flexible display and a production method thereof, which can solve the problems that a polarizer fails due to film packaging cracks in the folding flexible display, and the display is poor due to the fact that the conventional CVD1/CVD2 film is thick and has large stress and the film is easy to crack and peel during bending.
In order to solve the technical problems, the invention adopts the following technical scheme: the utility model provides a film packaging structure suitable for folding flexible display, the structure includes first inorganic layer, organic layer and second inorganic layer, first inorganic layer and second inorganic layer are formed by diffusion barrier layer and barrier layer stack in turn.
In the foregoing film encapsulation structure suitable for the foldable flexible display, the diffusion barrier layer uses an inorganic film without containing ammonium ions or ammonium radicals, such as a silicon oxide film, an aluminum oxide film or a titanium oxide film, and the barrier layer uses a metal oxide film or a metal nitride film, such as aluminum oxide, silicon oxide or silicon oxynitride.
In the foregoing film encapsulation structure suitable for folding flexible display, the diffusion barrier layer and the barrier layer in the first inorganic layer and the second inorganic layer are 2 or more layers.
In the foregoing thin film encapsulation structure suitable for a foldable flexible display, the diffusion barrier layer and the barrier layer in the first inorganic layer and the second inorganic layer are 2 to 5 layers.
The thin film packaging structure suitable for folding flexible display is characterized in that the thickness of the diffusion barrier layer is 0.1-0.2 um, and a silicon oxide thin film is adopted.
The thin film packaging structure suitable for folding flexible display is characterized in that the thickness of the barrier layer is 0.1-0.2 um, and the barrier layer is formed by adopting silicon nitride or silicon oxynitride to form a film independently or jointly.
The foregoing thin film encapsulation structure suitable for a foldable flexible display, the diffusion barrier layer is above the barrier layer.
The aforesaid is applicable to folding flexible display's film packaging structure, the organic layer thickness is 2 ~ 20um, and the whole thickness on first inorganic layer is 0.3 ~ 1.5 micron, and the whole thickness on second inorganic layer is 0.3 ~ 1.5 micron.
The production method of the thin film packaging structure suitable for folding flexible display comprises the steps of packaging a first inorganic layer, an organic layer and a second inorganic layer on an AMOLED device in sequence when the AMOLED device is packaged, wherein the first inorganic layer and the second inorganic layer are formed by alternately overlapping a diffusion barrier layer and a barrier layer.
In the foregoing method for producing a thin film encapsulation structure suitable for a foldable flexible display, the diffusion barrier layer and the barrier layer are encapsulated by using a plasma enhanced chemical vapor deposition process, a high-density plasma enhanced chemical vapor deposition process, or an atomic layer deposition process.
Compared with the prior art, the invention has the following advantages:
1. the film packaging structure comprises: the overlapping structure is adopted to replace the original first inorganic layer/second inorganic layer structure, the internal stress of the film forming film layer is reduced each time through multiple film forming, the problem of film crack and peeling is reduced, the film forming process without ammonia gas reaction gas is adopted to block the film forming process with ammonia gas reaction gas, and the optimal film thickness of the first inorganic layer/second inorganic layer of the overlapping structure is obtained. The multilayer structure is a combined structure of a barrier layer and a diffusion inhibition layer, and on the basis of meeting the packaging barrier property, NH in the inorganic layer is mainly preventedx *Diffusion of free radicals.
2. Film layers for film encapsulation: the film containing ammonia reaction gas mainly comprises SiNx and SiONx; the film containing no ammonia reaction gas was mainly SiOx. The overlapped packaging structure can not only prevent harmful gas in the external environment from corroding the OLED device, but also prevent the lower film in the whole structure from corroding the upper film.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of prior art scheme 1;
fig. 3 is a schematic structural view of prior art scheme 2.
The invention will be further described with reference to the following drawings and detailed description, but the invention is not limited thereto.
Detailed Description
Example 1 of the invention:
the utility model provides a film packaging structure suitable for folding flexible display, the structure includes first inorganic layer 1, organic layer 3 and second inorganic layer 2, first inorganic layer 1 and second inorganic layer 2 are formed by diffusion barrier layer 4 and barrier layer 5 stack in turn.
Wherein, the diffusion barrier layer 4 adopts an inorganic film without ammonium ions or ammonium radicals, such as a silicon oxide, aluminum oxide or titanium oxide film, and the barrier layer 5 adopts a metal oxide film or a metal nitride film, such as aluminum oxide, silicon oxide or silicon oxynitride.
More preferably, the diffusion barrier layer 4 and the barrier layer 5 in the first inorganic layer 1 and the second inorganic layer 2 are 2 or more layers.
Preferably, the diffusion barrier layer 4 and the barrier layer 5 in the first inorganic layer 1 and the second inorganic layer 2 are 2 to 5 layers.
Preferably, the thickness of the diffusion barrier layer 4 is 0.1-0.2 um, and a silicon oxide film is adopted.
More preferably, 5 thickness of barrier layer is 0.1 ~ 0.2um, adopts the independent filming of silicon nitride or poly silicon oxynitride, or the two jointly films.
The diffusion barrier layer 4 is above the barrier layer 5.
More preferably, the thickness of the organic layer 3 is 2-20 um, and the whole thickness of the first inorganic layer 1 is thickThe degree is 0.3 to 1.5 μm, and the overall thickness of the second inorganic layer 2 is 0.3 to 1.5. mu.m. By selecting the thickness and number of the diffusion barrier layer 4, the barrier layer 5, the first inorganic layer 1 and the second inorganic layer 2, NH in the inorganic layers can be preventedx *The diffusion of free radicals and the corrosion resistance reduce the packaging thickness and the packaging difficulty of the film, and a good packaging effect is realized.
The production method of the thin film packaging structure suitable for folding flexible display comprises the steps of sequentially packaging a first inorganic layer 1, an organic layer 3 and a second inorganic layer 2 on an AMOLED device 6 when the AMOLED device 6 is packaged, wherein the first inorganic layer 1 and the second inorganic layer 2 are formed by alternately overlapping a diffusion barrier layer 4 and a barrier layer 5.
The diffusion barrier layer 4 and the barrier layer 5 are encapsulated using a plasma enhanced chemical vapor deposition process, a high density plasma enhanced chemical vapor deposition process, or an atomic layer deposition process.
Example 2 of the invention: the utility model provides a film packaging structure suitable for folding flexible display, the structure includes first inorganic layer 1, organic layer 3 and second inorganic layer 2, first inorganic layer 1 and second inorganic layer 2 are formed by diffusion barrier layer 4 and barrier layer 5 stack in turn.
The diffusion barrier layer 4 is a titanium oxide film, and the barrier layer 5 is silicon oxynitride.
The diffusion barrier layer 4 and the barrier layer 5 in the first inorganic layer 1 and the second inorganic layer 2 are 3 to 4 layers.
The thickness of the diffusion barrier layer 4 is 0.15 um.
More preferably, the thickness of the barrier layer 5 is 0.15um, and the film is formed by adopting the silicon nitride and the silicon oxynitride.
The diffusion barrier layer 4 is above the barrier layer 5.
The thickness of the organic layer 3 is 10um, the whole thickness of the first inorganic layer 1 is 0.8 micron, and the whole thickness of the second inorganic layer 2 is 0.8 micron.
The production method is the same as example 1.
Claims (10)
1. The utility model provides a film packaging structure suitable for folding flexible display, its characterized in that, the structure includes first inorganic layer (1), organic layer (3) and second inorganic layer (2), first inorganic layer (1) and second inorganic layer (2) are formed by diffusion barrier layer (4) and barrier layer (5) stack in turn.
2. The thin film encapsulation structure suitable for a foldable flexible display according to claim 1, wherein the diffusion barrier layer (4) is an inorganic thin film free from ammonium ions or ammonium radicals, such as a silicon oxide, aluminum oxide or titanium oxide thin film, and the barrier layer (5) is a metal oxide film or a metal nitride film, such as aluminum oxide, silicon oxide or silicon oxynitride.
3. The thin film encapsulation structure suitable for a folding flexible display according to claim 1, wherein the diffusion barrier layer (4) and the barrier layer (5) in the first inorganic layer (1) and the second inorganic layer (2) are 2 layers or more.
4. A thin film encapsulation structure suitable for folding flexible displays according to claim 3, characterized in that the diffusion barrier layer (4) and the barrier layer (5) in the first inorganic layer (1) and the second inorganic layer (2) are 2-5 layers.
5. The thin film encapsulation structure suitable for the folding flexible display of claim 3, wherein the thickness of the diffusion barrier layer (4) is 0.1-0.2 um, and a silicon oxide thin film is adopted.
6. The thin film packaging structure suitable for the folding flexible display of claim 3, wherein the thickness of the barrier layer (5) is 0.1-0.2 um, and the barrier layer is formed by using SiN or SiON alone or together.
7. The thin film encapsulation structure suitable for folding flexible displays of claim 1, characterized in that the diffusion barrier layer (4) is above the barrier layer (5).
8. The thin film encapsulation structure suitable for the foldable flexible display of claim 1, wherein the thickness of the organic layer (3) is 2-20 um, the overall thickness of the first inorganic layer (1) is 0.3-1.5 um, and the overall thickness of the second inorganic layer (2) is 0.3-1.5 um.
9. The method for producing a thin film encapsulation structure suitable for a foldable flexible display according to any one of claims 1 to 8, wherein a first inorganic layer (1), an organic layer (3) and a second inorganic layer (2) are sequentially encapsulated on the AMOLED device (6) when encapsulating the AMOLED device (6), wherein the first inorganic layer (1) and the second inorganic layer (2) are formed by alternately stacking a diffusion barrier layer (4) and a barrier layer (5).
10. The method for producing a thin film encapsulation structure suitable for a folding flexible display according to claim 9, wherein the diffusion barrier layer (4) and the barrier layer (5) are encapsulated using a plasma enhanced chemical vapor deposition process, a high density plasma enhanced chemical vapor deposition process or an atomic layer deposition process.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113991035A (en) * | 2021-08-25 | 2022-01-28 | 上海和辉光电股份有限公司 | Thin film packaging structure for OLED packaging and organic light-emitting diode device |
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| US20180153006A1 (en) * | 2015-06-12 | 2018-05-31 | Sharp Kabushiki Kaisha | El display device and method for manufacturing el display device |
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| CN106450035A (en) * | 2016-11-17 | 2017-02-22 | 上海天马有机发光显示技术有限公司 | A display panel and a manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113991035A (en) * | 2021-08-25 | 2022-01-28 | 上海和辉光电股份有限公司 | Thin film packaging structure for OLED packaging and organic light-emitting diode device |
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