CN112490261A - 一种Micro LED检测和转移方法 - Google Patents

一种Micro LED检测和转移方法 Download PDF

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CN112490261A
CN112490261A CN202011372893.4A CN202011372893A CN112490261A CN 112490261 A CN112490261 A CN 112490261A CN 202011372893 A CN202011372893 A CN 202011372893A CN 112490261 A CN112490261 A CN 112490261A
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detection
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张有为
周宇
朱充沛
高威
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Nanjing CEC Panda LCD Technology Co Ltd
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract

本发明提供一种Micro LED检测和转移方法，包括如下步骤：S1：形成阵列设置的外延层；S2：在外延层上制作金属电极层；S3：金属电极层与暂态基板的第一UV胶贴合；S4：激光剥离蓝宝石基板；S5：检测基板上涂覆第二UV胶，然后在第二UV胶上制作并图案化的光敏导电层；S6：光敏导电层与LED的外延层贴合并加电固化，在加电固化的过程中；S7：移走暂态基板；S8：检测基板把正常的LED转移至背板基板的键合电极上，LED的金属电极层与键合电极键合；S9：在背板基板对LED进行修补，具体修补步骤S6中的环的LED。本发明通过检测和转移同时进行，在LED转移至背板基板前进行检查，提高检查和效率；检测和转移同时进行，提高工艺效率。

Description

一种Micro LED检测和转移方法
技术领域
本发明涉及一种Micro LED的技术领域，尤其涉及一种Micro LED检测和转移方法。
背景技术
Micro LED显示器由于具有低功耗、高亮度、超高解析度与色彩饱和度、反应速度快、超省电(Micro LED显示器的耗电量为液晶显示器耗电量的10％，为有机电致发光显示器耗电量的50％)、长寿命、高效率、适应各种尺寸、无缝拼接等优势，因而成为目前最具有潜力的下一代新型显示技术。
制作Micro LED显示器需要将百万颗的微米级LED转移至背板上，目前技术转移后难免存在LED损坏、缺失、或键合不佳造成坏点的情况，如果不进行修补，便会造成显示不良，如何找出并修补这些坏点是迫切需要解决的难题。
目前对于LED的检测，一般是转移至背板后加电进行检测，发现坏点后，利用激光等方式去除坏点，再进行单颗修补，效率慢，且工艺复杂。
发明内容
本发明的目的在于提供一种同时进行检测和转移的Micro LED检测和转移方法。
本发明提供一种Micro LED检测和转移方法，包括如下步骤：
S1：首先在蓝宝石基板上沉积外延材料层；然后对外延材料层进行刻蚀形成阵列设置的外延层；
S2：在外延层上制作金属电极层，外延层和对应的金属电极层形成单颗LED；
S3：金属电极层与暂态基板的第一UV胶贴合；
S4：激光剥离蓝宝石基板；
S5：检测基板上涂覆第二UV胶，然后在第二UV胶上制作并图案化的光敏导电层；
S6：光敏导电层与LED的外延层贴合并加电固化，在加电固化的过程中，坏的LED将不会与光敏导电层进行贴合，正常的LED与光敏导电层进行固化贴合；
S7：移走暂态基板；
S8：检测基板把正常的LED转移至背板基板的键合电极上，LED的金属电极层与键合电极键合；
S9：在背板基板对LED进行修补，具体修补步骤S6中的环的LED。
进一步地，光敏导电层包括光敏层和掺杂在光敏层中的金属球或纳米银材料。
进一步地，光敏导电层为层状结构。
进一步地，光敏层的材料为丙烯酸酯类预聚物、活性单体和光引发剂混合后的材料。
进一步地，光引发剂为可见光引发剂。
进一步地，光敏导电层固化后的粘力大于第二UV胶的粘力。
本发明通过检测和转移同时进行，在LED转移至背板基板前进行检查，提高检查和效率；检测和转移同时进行，提高工艺效率。
附图说明
图1至图10为本发明Micro LED检测和转移方法步骤的示意图。
具体实施方式
下面结合附图和具体实施例，进一步阐明本发明，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
为使图面简洁，各图中只示意性地表示出了与本发明相关的部分，它们并不代表其作为产品的实际结构。另外，以使图面简洁便于理解，在有些图中具有相同结构或功能的部件，仅示意性地绘示了其中的一个，或仅标出了其中的一个。在本文中，“一个”不仅表示“仅此一个”，也可以表示“多于一个”的情形。
本发明揭示一种Micro LED检测和转移方法，包括如下步骤：
S1：如图1所示，首先在蓝宝石基板10上沉积外延材料层11；如图2所示，然后对外延材料层11进行刻蚀形成阵列设置的外延层12；
S2：如图3所示，在外延层12上制作金属电极层13，外延层12和对应的金属电极层13形成单颗LED；
S3：如图4所示，金属电极层13与暂态基板20的第一UV胶21贴合；
S4：如图5所示，激光玻璃蓝宝石基板10；
S5：如图6所示，检测基板30上涂覆第二UV胶31，然后在UV胶31上制作并图案化的光敏导电层32；
其中，光敏导电层32包括光敏层和掺杂在光敏层中的金属球或纳米银材料，光敏导电层为层状结构。光敏层的材料可以为丙烯酸酯类预聚物、活性单体和光引发剂混合后的材料，光引发剂为可见光引发剂；粘附层材料。光敏导电层32固化后的粘力大于第二UV胶31的粘力。
S6：如图7所示，光敏导电层32与LED的外延层12贴合并加电固化，在加电固化的过程中，坏的LED将不会与光敏导电层32进行贴合，只有正常的LED才与光敏导电层32进行固化贴合；
S7：如图8所示，移走暂态基板20；
S8：如图9所示，检测基板30把正常的LED转移至背板基板40的键合电极41上，LED的金属电极层13与键合电极41键合；
S9：如图10所示，在背板基板40对LED进行修补，具体修补步骤S6中的环的LED。
本发明通过检测和转移同时进行，在LED转移至背板基板前进行检查，提高检查和效率；检测和转移同时进行，提高工艺效率。
以上详细描述了本发明的优选实施方式，但是本发明并不限于上述实施方式中的具体细节，在本发明的技术构思范围内，可以对本发明的技术方案进行多种等同变换(如数量、形状、位置等)，这些等同变换均属于本发明的保护范围。

Claims (6)

1.一种Micro LED检测和转移方法，其特征在于，包括如下步骤：
S1：首先在蓝宝石基板上沉积外延材料层；然后对外延材料层进行刻蚀形成阵列设置的外延层；
S2：在外延层上制作金属电极层，外延层和对应的金属电极层形成单颗LED；
S3：金属电极层与暂态基板的第一UV胶贴合；
S4：激光剥离蓝宝石基板；
S5：检测基板上涂覆第二UV胶，然后在第二UV胶上制作并图案化的光敏导电层；
S6：光敏导电层与LED的外延层贴合并加电固化，在加电固化的过程中，坏的LED将不会与光敏导电层进行贴合，正常的LED与光敏导电层进行固化贴合；
S7：移走暂态基板；
S8：检测基板把正常的LED转移至背板基板的键合电极上，LED的金属电极层与键合电极键合；
S9：在背板基板对LED进行修补，具体修补步骤S6中的环的LED。
2.根据权利要求1所述Micro LED检测和转移方法，其特征在于，光敏导电层包括光敏层和掺杂在光敏层中的金属球或纳米银材料。
3.根据权利要求2所述Micro LED检测和转移方法，其特征在于，光敏导电层为层状结构。
4.根据权利要求2所述Micro LED检测和转移方法，其特征在于，光敏层的材料为丙烯酸酯类预聚物、活性单体和光引发剂混合后的材料。
5.根据权利要求4所述Micro LED检测和转移方法，其特征在于，光引发剂为可见光引发剂。
6.根据权利要求1所述Micro LED检测和转移方法，其特征在于，光敏导电层固化后的粘力大于第二UV胶的粘力。
CN202011372893.4A 2020-11-30 2020-11-30 一种Micro LED检测和转移方法 Withdrawn CN112490261A (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113990793A (zh) * 2021-10-21 2022-01-28 东莞市中麒光电技术有限公司 一种led芯片转移方法
WO2022257078A1 (zh) * 2021-06-10 2022-12-15 重庆康佳光电技术研究院有限公司 键合检测装置及方法和厚度均匀性检测装置及方法
CN116013834A (zh) * 2022-12-19 2023-04-25 惠科股份有限公司 暂态基板及led芯片转移方法
CN116154057A (zh) * 2023-03-30 2023-05-23 惠科股份有限公司 转移方法、显示面板和暂态基板

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022257078A1 (zh) * 2021-06-10 2022-12-15 重庆康佳光电技术研究院有限公司 键合检测装置及方法和厚度均匀性检测装置及方法
CN113990793A (zh) * 2021-10-21 2022-01-28 东莞市中麒光电技术有限公司 一种led芯片转移方法
CN116013834A (zh) * 2022-12-19 2023-04-25 惠科股份有限公司 暂态基板及led芯片转移方法
CN116013834B (zh) * 2022-12-19 2023-10-03 惠科股份有限公司 暂态基板及led芯片转移方法
CN116154057A (zh) * 2023-03-30 2023-05-23 惠科股份有限公司 转移方法、显示面板和暂态基板
CN116154057B (zh) * 2023-03-30 2024-08-02 惠科股份有限公司 转移方法、显示面板和暂态基板

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Application publication date: 20210312