CN112487747A - Power element simulation method and device - Google Patents

Power element simulation method and device Download PDF

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Publication number
CN112487747A
CN112487747A CN202011364363.5A CN202011364363A CN112487747A CN 112487747 A CN112487747 A CN 112487747A CN 202011364363 A CN202011364363 A CN 202011364363A CN 112487747 A CN112487747 A CN 112487747A
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power
rectangular
rectangular device
model
parameters
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曾健忠
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Shenzhen Sirius Semiconductor Co ltd
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Shenzhen Sirius Semiconductor Co ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/36Circuit design at the analogue level
    • G06F30/367Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18Manufacturability analysis or optimisation for manufacturability

Abstract

The application is applicable to the field of integrated circuit design and layout, and provides a power element simulation method and a power element simulation device, wherein the method comprises the following steps: firstly, acquiring a rectangular device model and parameters of the rectangular device model; then, superposing the rectangular device model to construct a power device; then, correlating the model parameters of the rectangular device with the power device; and finally, the power device is simulated according to the model parameters of the rectangular device, so that errors generated by calculating the electrical parameters of the power device by numerical operation of an interpolation method or an extrapolation method are avoided, and the accuracy of the electrical parameter simulation of the power element is improved.

Description

Power element simulation method and device
Technical Field
The application belongs to the technical field of component simulation, and particularly relates to a power element simulation method and device.
Background
In a conventional semiconductor device, the accuracy of the model is required to ensure the design accuracy, so the uniformity of the model-to-process (S2S) conversion is very important, and in addition to ensuring the accuracy, it is ensured that there is not too much excess or too little design spare space. Power devices are often used in power supply circuits, mainly above power fets, to provide corresponding currents, such as 2A and 4A, and therefore have very large device sizes, such as 20000um, 40000um and 60000 um.
The traditional simulation model is based on the component size on the test pattern to measure, the test pattern is usually composed of three groups of small-sized components, the measurement data is provided to the simulation model for the reference points of three fixed points, the simulation model calculates the size of other design components without actual size measurement by interpolation or extrapolation, and then provides the corresponding current, voltage and behavior description of dynamic switch, etc., so as to make the user simulate the device. This approach has the obvious disadvantage that since the device model is a numerical method to calculate the device dimensions without actual measurement data, there is a significant difference between the simulation result of the model and the current of the actual device dimensions, which can generally be up to 15% to 20% error, and the designer is forced to use a larger design spare space to achieve the circuit specifications for safety. This error is magnified as the size increases. For example, as shown in fig. 1, the error caused by the fluctuation of the model itself and the actually measured three points (t1, t2, and t3) is only 3%, but when the model is applied to a power device, the error between the software-simulated point (s1) and the actual points (a1 and a2) is as high as 15% to 20% due to the larger size of the power device.
The conventional modeling does not always define the characteristics of the device by only relying on the results of the previous processes, and after the device is subjected to mass production, compensation is inevitably generated in the long-term production process, so that a test pattern placed on a wafer bath needs to be measured periodically to know the real compensation amount, and after a certain value is exceeded, the model needs to be updated.
After the platform is properly opened, the fab may also enhance or adjust existing processes, which may result in increased performance of the components, but typically does not perform the next power device measurement again, thereby creating another error accumulation.
When the power device itself measures, due to the very large amount of current, a thermal effect may be caused, which may cause inconsistency between measurements of the device, but this thermal effect is unavoidable, but an excessive pessimistic result may be caused, because the accumulation of thermal energy may cause a decrease in the device current, and another source of error in the above measurements is also formed.
Therefore, for the result measured by the small-size component of the model, the numerical operation of an interpolation method or an extrapolation method is used for calculating the error between the electric parameter generated by the power device and the electric parameter of the actual power device; moreover, in the actual production process, compensation between the original measurement and the original measurement is caused by different plants, different equipment machines and the like, and the compensation cannot be observed on the monitoring wafer; in addition, in the process of optimizing the process, additional errors can be generated due to the lack of recalibration of the power device; finally, in the process of measuring the power device, the actual current is excessively pessimistic estimated due to the fact that the thermal effect is too serious; therefore, the conventional power device simulation method cannot accurately simulate the electrical parameters of the power device.
Disclosure of Invention
The embodiment of the application provides a power element simulation method and device, which can improve the accuracy of electrical parameter simulation of a power element.
In a first aspect, an embodiment of the present application provides a power element simulation method, including:
acquiring a rectangular device model and rectangular device model parameters;
superposing the rectangular device model to construct a power device;
associating the rectangular device model parameters with the power device;
and simulating the power device according to the rectangular device model parameters.
In one possible implementation manner of the first aspect, the manner of superimposing the rectangular device modules is a parallel connection.
Illustratively, m of the rectangular device models are connected to obtain the power device.
It will be appreciated that the above-described manner of stacking rectangular device modules is only an alternative embodiment, and that one possible implementation of the first aspect comprises a parallel connection.
In a second aspect, an embodiment of the present application provides a power element simulation apparatus, including:
the model acquisition module is used for acquiring a rectangular device model and rectangular device model parameters;
the building module is used for stacking the rectangular device model to build a power device;
a correlation module for correlating the rectangular device model parameters with the power device;
and the simulation module is used for simulating the power device according to the rectangular device model parameters.
In a third aspect, an embodiment of the present application provides an electronic device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and when the processor executes the computer program, the power element simulation method according to any one of the first aspect is implemented.
In a fourth aspect, the present application provides a computer-readable storage medium, where a computer program is stored, and when executed by a processor, the computer program implements the power element simulation method according to any one of the first aspect.
In a fifth aspect, the present application provides a computer program product, which when run on a terminal device, causes the terminal device to execute the power element simulation method according to any one of the first aspect.
It is understood that the beneficial effects of the second aspect to the fifth aspect can be referred to the related description of the first aspect, and are not described herein again.
The method comprises the steps of firstly obtaining a rectangular device model and rectangular device model parameters; then, superposing the rectangular device model in a parallel connection mode and/or a serial connection mode to construct a power device; then, correlating the model parameters of the rectangular device with the power device; and finally, the power device is simulated according to the model parameters of the rectangular device, so that errors generated by calculating the electrical parameters of the power device by numerical operation of an interpolation method or an extrapolation method are avoided, and the accuracy of the electrical parameter simulation of the power element is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a conventional extrapolation method for power component simulation;
fig. 2 is a schematic flowchart of a power device simulation method according to an embodiment of the present application;
FIG. 3 is a schematic diagram illustrating an arrangement of rectangular device models in a power device according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a rectangular device model arrangement in a power device according to another embodiment of the present application;
FIG. 5 is a schematic diagram of a power device provided by an embodiment of the present application;
FIG. 6 is a schematic diagram of a power device provided by another embodiment of the present application;
fig. 7 is a schematic flowchart of a power device simulation method according to another embodiment of the present application;
fig. 8 is a schematic structural diagram of a power element simulation apparatus according to an embodiment of the present application;
fig. 9 is a schematic structural diagram of a power element simulation apparatus according to an embodiment of the present application;
FIG. 10 is a schematic structural diagram of a power device simulation apparatus building block according to an embodiment of the present application;
fig. 11 is a schematic structural diagram of an electronic device provided in an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.
Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.
The power element simulation method provided by the embodiment of the application can be applied to electronic devices such as a mobile phone, a tablet personal computer, a wearable device, a vehicle-mounted device, an Augmented Reality (AR)/Virtual Reality (VR) device, a notebook computer, an ultra-mobile personal computer (UMPC), a netbook, a Personal Digital Assistant (PDA), and the like, and the embodiment of the application does not limit the specific type of the electronic device at all.
Fig. 2 shows a schematic flow chart of a power element simulation method provided by the present application, which may be applied to the above-mentioned electronic device by way of example and not limitation. The power element simulation method comprises the following steps:
s101: and acquiring a rectangular device model and rectangular device model parameters.
Specifically, the rectangular device model parameters include a rectangular device resistance, a rectangular device capacitance, and a rectangular device inductance.
S102, the rectangular device model is superposed to construct the power device.
In a specific implementation, as shown in fig. 3, adjacent rectangular device models in the power device may be arranged in sequence. As shown in fig. 4, adjacent rectangular device models in the power device may be arranged in sequence or mirror-symmetrical; when the adjacent rectangular device models in the power device are mirror-symmetrical, the adjacent rectangular device models share the positive power supply end or the negative power supply end.
It should be noted that, in step S102, the rectangular device model is superimposed in a parallel manner to construct the power device, in this case, step S102 includes:
A2. dividing the width of the grid of the power device by the width of the rectangular device model to obtain a quotient integer so as to obtain a second width coefficient m;
B2. and connecting the m rectangular device models to obtain the power device.
Specifically, the sources of the m rectangular device models can be connected in common; then connecting the grids of the m rectangular device models in common; and finally, connecting the drains of the m rectangular device models in common. The resulting power device is shown in fig. 5 or fig. 6.
The m rectangular device models are connected in parallel to obtain the power device, and the model of the power device with the larger grid width is established, namely the power device with large current is constructed.
S103: rectangular device model parameters are associated with the power device. Alternatively, the rectangular device model parameters may be associated with the power device by circuit simulation software.
S104: and simulating the power device according to the rectangular device model parameters.
Specifically, the electrical parameters of the power device may be calculated from the rectangular device model parameters.
Step S104 specifically includes: calculating the resistance of the power device according to a parallel resistance calculation formula and the resistance of the rectangular device; calculating the capacitance of the power device according to a parallel capacitance calculation formula and the capacitance of the rectangular device; and calculating the inductance of the power device according to a parallel inductance calculation formula and the inductance of the rectangular device.
Optionally, as shown in fig. 7, step S101 may further include step S99 and step S100.
S99: and testing the rectangular device on the wafer slot to obtain the rectangular device parameters.
And manufacturing rectangular devices on the wafer grooves according to the sizes of the rectangular devices, and measuring parameters of the rectangular devices.
S100: and loading the parameters of the rectangular device into circuit simulation software to establish a rectangular device model.
And loading the size of the rectangular device into circuit simulation software to model the rectangular device model, and setting parameters of the rectangular device model.
The rectangular device is tested on the wafer groove of the wafer, the parameters of the rectangular device are accurately measured, and the rectangular device model is established according to the parameters of the rectangular device, so that the consistency of the simulation model converted to the manufacturing process is improved.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
Fig. 6 shows a block diagram of a power element simulation apparatus provided in the embodiment of the present application, which corresponds to the power element simulation method in the above embodiment, and only shows a part related to the embodiment of the present application for convenience of description.
Referring to fig. 8, the power element simulation apparatus 30 includes a model acquisition module 310, a construction module 320, an association module 330, and a simulation module 340.
A model obtaining module 310, configured to obtain a rectangular device model and rectangular device model parameters;
a building module 320 for stacking the rectangular device models to build the power device;
an association module 330 for associating rectangular device model parameters with the power device;
and the simulation module 340 is configured to simulate the power device according to the rectangular device model parameters.
As shown in fig. 9, the power element simulation apparatus 30 may further include a parameter obtaining module 350 and a model building module 360.
A parameter obtaining module 350, configured to test a rectangular device on a wafer slot of a wafer to obtain a rectangular device parameter;
and the model building module 360 is used for loading the rectangular device parameters into the circuit simulation software to build the rectangular device model.
The building module 320 is specifically configured to superimpose the rectangular device model in a parallel manner to build the power device, as shown in fig. 10, the building module 320 includes a width coefficient obtaining module 325 and a power device obtaining module 326.
A width coefficient obtaining module 325, configured to take an integer of a quotient obtained by dividing the gate width of the power device by the model width of the rectangular device to obtain a second width coefficient m.
And a power device obtaining module 326, configured to connect the m rectangular device models in parallel to obtain the power device.
The power device acquisition module 326 is specifically configured to: firstly, the sources of the m rectangular device models can be connected in common; then connecting the grids of the m rectangular device models in common; and finally, connecting the drains of the m rectangular device models in common.
By way of example and not limitation, adjacent rectangular device models in a power device are sequentially arranged or mirror-symmetrical. When adjacent rectangular device models in the power device are in mirror symmetry, the adjacent rectangular device models share the positive power supply end or the negative power supply end.
The simulation module 340 is specifically configured to: and calculating the electrical parameters of the power device according to the model parameters of the rectangular device.
It should be noted that, for the information interaction, execution process, and other contents between the above-mentioned devices/units, the specific functions and technical effects thereof are based on the same concept as those of the embodiment of the method of the present application, and specific reference may be made to the part of the embodiment of the method, which is not described herein again.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules, so as to perform all or part of the functions described above. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
An embodiment of the present application further provides an electronic device, including: at least one processor, a memory, and a computer program stored in the memory and executable on the at least one processor, the processor implementing the steps of any of the various method embodiments described above when executing the computer program.
The embodiments of the present application further provide a computer-readable storage medium, where a computer program is stored, and when the computer program is executed by a processor, the computer program implements the steps that can be implemented in the above method embodiments.
The embodiments of the present application provide a computer program product, which when running on an electronic device, enables the electronic device to implement the steps in the above method embodiments when executed.
Fig. 11 is a schematic structural diagram of a power device simulator/electronic apparatus according to an embodiment of the present disclosure. As shown in fig. 11, the power element simulation apparatus/electronic device 11 of this embodiment includes: at least one processor 110 (only one processor is shown in fig. 11), a memory 111, and a computer program 112 stored in the memory 111 and operable on the at least one processor 110, the steps in any of the various power element simulation method embodiments described above being implemented when the computer program 112 is executed by the processor 110.
The power device emulator/electronic device 11 may be a desktop computer, a notebook, a palm top computer, a cloud server, or other computing devices. The power element emulation device/electronics can include, but is not limited to, a processor 110, a memory 111. Those skilled in the art will appreciate that fig. 11 is merely an example of the power element simulator/electronic device 11, and does not constitute a limitation of the power element simulator/electronic device 11, and may include more or less components than those shown, or combine some components, or different components, such as an input/output device, a network access device, and the like.
The Processor 110 may be a Central Processing Unit (CPU), and the Processor 110 may be other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 111 may be an internal storage unit of the power device emulator/electronic device 11 in some embodiments, such as a hard disk or a memory of the power device emulator/electronic device 11. The memory 111 may also be an external storage device of the power component emulator/electronic device 11 in other embodiments, such as a plug-in hard disk provided on the power component emulator/electronic device 11, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like. Further, the memory 111 may also include both an internal storage unit of the power element emulator/electronic device 11 and an external storage device. The memory 111 is used for storing an operating system, an application program, a BootLoader (BootLoader), data, and other programs, such as program codes of a computer program. The memory 111 may also be used to temporarily store data that has been output or is to be output.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, all or part of the processes in the methods of the embodiments described above can be implemented by a computer program, which can be stored in a computer readable storage medium and used by a processor to implement the steps of the embodiments of the methods described above. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include at least: any entity or apparatus capable of carrying computer program code to a terminal device, recording medium, computer Memory, Read-Only Memory (ROM), Random-Access Memory (RAM), electrical carrier wave signals, telecommunications signals, and software distribution medium. Such as a usb-disk, a removable hard disk, a magnetic or optical disk, etc. In certain jurisdictions, computer-readable media may not be an electrical carrier signal or a telecommunications signal in accordance with legislative and patent practice.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/network device and method may be implemented in other ways. For example, the above-described apparatus/network device embodiments are merely illustrative, and for example, a module or a unit may be divided into only one logical function, and may be implemented in other ways, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
Units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.

Claims (10)

1. A power element simulation method, comprising:
acquiring a rectangular device model and rectangular device model parameters;
superposing the rectangular device model to construct a power device;
associating the rectangular device model parameters with the power device;
and simulating the power device according to the rectangular device model parameters.
2. The power component simulation method according to claim 1, wherein the adjacent rectangular device models in the power device are sequentially arranged or mirror-symmetrical.
3. The power device simulation method according to claim 2, wherein when the adjacent rectangular device models in the power device are mirror-symmetric, the adjacent rectangular device models share a positive power supply terminal or a negative power supply terminal.
4. The power component simulation method of claim 1, wherein the superimposing the rectangular device model to construct a power device comprises:
dividing the width of the grid of the power device by the width of the rectangular device model to obtain a quotient integer so as to obtain a second width coefficient m;
and connecting m rectangular device models to obtain the power device.
5. The power element simulation method of claim 4, wherein the connecting m of the rectangular device models to obtain the power device comprises:
connecting the source electrodes of the m rectangular device models in common;
connecting the grids of the m rectangular device models in common;
and connecting the drains of the m rectangular device models in common.
6. The power element simulation method of claim 1, wherein obtaining the rectangular device model and the rectangular device model parameters further comprises:
testing a rectangular device on a wafer slot to obtain parameters of the rectangular device;
and loading the rectangular device parameters into the circuit simulation software to establish the rectangular device model.
7. The power element simulation method according to claim 1, wherein the simulating the power device according to the rectangular device model parameter specifically comprises:
and calculating the electrical parameters of the power device according to the model parameters of the rectangular device.
8. A power element emulation apparatus, comprising:
the model acquisition module is used for acquiring a rectangular device model and rectangular device model parameters;
the building module is used for superposing the rectangular device model in a parallel connection mode and/or a serial connection mode to build a power device;
a correlation module for correlating the rectangular device model parameters with the power device;
and the simulation module is used for simulating the power device according to the rectangular device model parameters.
9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the power element simulation method of any of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, implements a power element simulation method according to any one of claims 1 to 7.
CN202011364363.5A 2020-11-27 2020-11-27 Power element simulation method and device Pending CN112487747A (en)

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