CN112475627A - Ring removing method for Taiko thinned wafer - Google Patents
Ring removing method for Taiko thinned wafer Download PDFInfo
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- CN112475627A CN112475627A CN202011282723.7A CN202011282723A CN112475627A CN 112475627 A CN112475627 A CN 112475627A CN 202011282723 A CN202011282723 A CN 202011282723A CN 112475627 A CN112475627 A CN 112475627A
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- wafer
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000005520 cutting process Methods 0.000 claims abstract description 26
- 238000003698 laser cutting Methods 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims description 30
- 239000012634 fragment Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 58
- 238000013459 approach Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The application discloses a ring removing method for a Taiko thinned wafer, and relates to the field of semiconductor manufacturing. The ring removing method of the Taiko thinning wafer comprises the steps of thinning the back of the wafer by adopting a Taiko thinning process; adjusting the diameter of a laser spot to a preset value, wherein the preset value is more than 20 um; cutting the Taiko ring on the back of the wafer in a laser cutting mode; the problem that the existing Taiko ring removing process is easy to cause cracks and fragments on the wafer is solved; the effects of reducing cracks and fragments caused during ring removal and improving the stability of the ring cutting process are achieved.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a ring removing method for a Taiko thinned wafer.
Background
The Taiko thinning process is a wafer back mask technology developed by Disco corporation of Japan, when a wafer is ground, the edge part with a certain width at the periphery of the wafer is reserved, and only the middle of the wafer is ground and thinned, so that the warpage of the thinned wafer is reduced. The 12-inch wafer is generally thinned at the back by adopting a Taiko thinning process, and a Taiko ring is formed at the edge part of the back of the thinned wafer.
In order to maintain the integrity of the wafer edge, which facilitates subsequent dicing and packaging, it is also necessary to ring-cut and ring-remove the thinned wafer. There are generally two types of circular cutting: blade cutting and laser cutting. Since the blade cutting efficiency is low and the residue remains after cutting, the laser cutting is becoming the mainstream circular cutting method.
However, as the thickness of the wafer decreases, the wafer is more susceptible to the risk of cracks and chips when the edge Taiko ring is removed.
Disclosure of Invention
In order to solve the problems in the related art, the application provides a ring removing method for a Taiko thinned wafer.
In one aspect, an embodiment of the present application provides a ring removing method for a Taiko thinned wafer, including:
thinning the back of the wafer by adopting a Taiko thinning process;
adjusting the diameter of a laser spot to a preset value, wherein the preset value is more than 20 um;
and cutting the Taiko ring on the back surface of the wafer by a laser cutting method.
Optionally, adjusting the laser spot diameter to a predetermined value includes:
and the diameter of the laser spot is set to be a preset value by adjusting a focusing lens of the laser cutting equipment.
Optionally, adjusting the laser spot diameter to a predetermined value includes:
the diameter of a laser spot is made to be a preset value by adjusting the defocusing amount of the laser cutting equipment.
Optionally, when the Taiko ring is cut, a protective film is attached to the back surface of the wafer, or the protective film is not attached to the back surface of the wafer.
Optionally, when the protective film is attached to the back surface of the wafer, the method further includes:
a robot arm is used to cut between the protective film and the Taiko ring, and the Taiko ring is removed from the protective film.
Optionally, the number of the mechanical arms is at least 1.
Optionally, after thinning, the thickness of the wafer is 20um-250 um.
Optionally, before adjusting the laser spot diameter to the predetermined value, the method further includes:
and carrying out a back process on the back of the wafer.
The technical scheme at least comprises the following advantages:
the back of the wafer is thinned by using a Taiko thinning process, the width of a cutting channel is increased by adjusting the diameter of a laser spot to a preset value, and then a Taiko ring on the back of the wafer is cut by a laser cutting mode, so that the problem that the wafer is easy to crack and fragment due to the existing Taiko ring removing process is solved; the effects of reducing cracks and fragments caused during ring removal and improving the stability of the ring cutting process are achieved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flowchart of a method for removing loops from a Taiko thinned wafer according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of a conventional Taiko ring after a cutting process;
FIG. 3 is a schematic view of a Taiko ring provided in an embodiment of the present application after cutting;
FIG. 4 is a schematic view of a wafer ring-off process with a protective film attached thereon according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a wafer ring-off process with a protective film attached thereon according to an embodiment of the present disclosure;
wherein, 11, cutting a channel; 12, Taiko loop; 13, a wafer; 10, a dicing tray; 21 cutting a channel; 22, Taiko loop; 23, a wafer; 31, a protective film; 32, a mechanical arm; and 33, taking the ring plate.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a flowchart of a ring-removing method for Taiko thinned wafers according to an embodiment of the present application is shown, the method at least includes the following steps:
After the back surface is thinned, a Taiko ring is formed at the edge of the back surface of the wafer.
The predetermined value is greater than 20 um.
The laser spot diameter is equal to the width of the cut track when cutting the Taiko ring.
At present, the width of a cutting channel is about 5um-20um, and when the thickness of a thinned wafer is very thin, cracks and fragments are easy to appear on the wafer when a Taiko ring is removed. The laser spot diameter of the laser cutting equipment is adjusted to a preset value, the width of a cutting channel is increased, and the risks of cracks and fragments are reduced when a ring removing process is carried out.
In one example, the predetermined value is 20um-100 um.
And 103, cutting the Taiko ring on the back surface of the wafer in a laser cutting mode.
Optionally, when the Taiko ring is cut, the protective film is not attached to the back surface of the wafer.
Optionally, a protective film is attached to the back surface of the wafer when the Taiko ring is cut.
When the protective film is required to be attached to the back surface of the wafer, the protective film is attached to the back surface of the wafer after the thinning and back surface process of the back surface of the wafer is completed.
The thinned wafer is placed on a scribe tray prior to cutting the Taiko ring.
As shown in FIG. 2, when the Taiko ring is cut by the prior art, the cutting path 11 is formed to be narrower; as shown in fig. 3, when the Taiko ring is cut by the ring removing method provided in the embodiment of the present application, the width of the cutting street 21 is increased.
Optionally, after the wafer is thinned by Taiko, the thickness of the wafer is 20um-250 um.
In an alternative embodiment based on the embodiment shown in fig. 1, the laser spot diameter may be adjusted to a predetermined value as follows.
Mode 1: the diameter of a laser spot is made to be a preset value by adjusting the defocusing amount of the laser cutting equipment.
Mode 2: and the diameter of the laser spot is set to be a preset value by adjusting a focusing lens of the laser cutting equipment.
When the focusing mirror installed on the laser cutting equipment can enable the diameter of a laser spot to be a preset value, the focusing mirror is not replaced; when the diameter of the laser spot cannot be set to a preset value by the focusing mirror installed on the social security of laser cutting, the focusing mirror is replaced.
In an alternative embodiment based on the embodiment shown in fig. 1, if the protective film is not attached to the back surface of the wafer, the Taiko ring will automatically fall off after the step 103 of laser cutting the Taiko ring on the back surface of the wafer.
In an alternative embodiment based on the embodiment shown in fig. 1, when the protective film is attached to the back surface of the wafer, after step 103, the Taiko ring on the back surface of the wafer is cut, the Taiko ring still adheres to the protective film, and the cut Taiko ring needs to be removed by a robot arm, and the method further includes the following steps:
and 106, cutting into the space between the protective film and the Taiko ring by using a mechanical arm, and taking the Taiko ring off the protective film by using the mechanical arm.
Optionally, the number of the mechanical arms is at least 1. For example, the number of the mechanical arms is 1-5.
When the number of the mechanical arms is more than 1, the structures of the mechanical arms are the same, and the mechanical arms simultaneously cut between the protective film and the Taiko ring.
As shown in fig. 4, the tip of the ring-removing plate 33 of the robot arm 32 is cut into the space between the protective film 31 and the Taiko ring 22, so that the ring-removing plate 33 gradually approaches the surface of the Taiko ring 22, and the Taiko ring 22 is completely separated from the protective film 31; as shown in FIG. 5, the ring removal of the thinned wafer is completed by raising robot 32 and removing Taiko ring 22 from robot 32.
Depending on the positional relationship between the protective film and the Taiko ring, the robot arm can be raised or lowered during ring removal. For example, if the protective film is above the Taiko ring, the mechanical arm is controlled to descend, and the ring taking plate presses the Taiko ring to be peeled off from the protective film; or, the protective film is arranged below the Taiko ring, the mechanical arm is controlled to ascend, and the ring taking plate supports the Taiko ring.
The ring-removing plate of the robot arm may be inserted between the Taiko ring and the protective film, for example: triangular, oval, etc., and fig. 4 and 5 are only exemplary illustrations, and the shape and size of the annular plate are not limited in the embodiments of the present application.
When the robot arm is used for ring removal, the stability of the robot arm needs to be controlled, so as to prevent the Taiko ring from inclining and colliding with the wafer on the scribing tray 10 in the ascending/descending process of the robot arm.
And in the process of controlling the mechanical arm to gradually approach the surface of the Taiko ring, controlling the ring taking plate of the mechanical arm not to collide with the non-Taiko ring area of the wafer.
In an alternative embodiment based on the embodiment shown in fig. 1, before adjusting the diameter of the laser spot to a predetermined value, that is, before performing the ring-removing process after the wafer is thinned at the back side, the method further includes:
and carrying out a back process on the back of the wafer.
And after the back surface process of the wafer is finished, the ring removing process is continued.
In summary, the ring removing method for the Taiko thinned wafer provided by the embodiment of the application thins the back surface of the wafer by using the Taiko thinning process, adjusts the diameter of a laser spot to a preset value to increase the width of a cutting channel, and cuts the Taiko ring on the back surface of the wafer by using a laser cutting mode, thereby solving the problem that the existing Taiko ring removing process easily causes cracks and fragments on the wafer; the effects of reducing cracks and fragments caused during ring removal and improving the stability of the ring cutting process are achieved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (8)
1. A method for removing rings from a Taiko thinned wafer, the method comprising:
thinning the back of the wafer by adopting a Taiko thinning process;
adjusting the diameter of a laser spot to a preset value, wherein the preset value is more than 20 um;
and cutting the Taiko ring on the back surface of the wafer by a laser cutting method.
2. The method of claim 1, wherein the adjusting the laser spot diameter to a predetermined value comprises:
and adjusting a focusing lens of the laser cutting equipment to enable the diameter of the laser spot to be a preset value.
3. The method of claim 1, wherein the adjusting the laser spot diameter to a predetermined value comprises:
and adjusting the defocusing amount of the laser cutting equipment to enable the diameter of the laser spot to be a preset value.
4. The method as claimed in claim 1, wherein a protective film is attached to the back surface of the wafer when the Taiko ring is cut, or a protective film is not attached to the back surface of the wafer.
5. The method of claim 1, wherein when a protective film is attached to the wafer backside, the method further comprises:
cutting into the space between the protective film and the Taiko ring by a robot arm, and removing the Taiko ring from the protective film by the robot arm.
6. The method of claim 5, wherein the number of robotic arms is at least 1.
7. The method of any of claims 1 to 6, wherein the wafer has a thickness of 20um to 250um after thinning.
8. The method of claim 1, wherein prior to adjusting the laser spot diameter to the predetermined value, the method further comprises:
and carrying out a back process on the back of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282723.7A CN112475627A (en) | 2020-11-17 | 2020-11-17 | Ring removing method for Taiko thinned wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282723.7A CN112475627A (en) | 2020-11-17 | 2020-11-17 | Ring removing method for Taiko thinned wafer |
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| Publication Number | Publication Date |
|---|---|
| CN112475627A true CN112475627A (en) | 2021-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011282723.7A Pending CN112475627A (en) | 2020-11-17 | 2020-11-17 | Ring removing method for Taiko thinned wafer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113172778A (en) * | 2021-04-28 | 2021-07-27 | 华虹半导体(无锡)有限公司 | Taizhou ring removing method and positioning device for Taizhou ring removing |
| CN113211661A (en) * | 2021-04-16 | 2021-08-06 | 华虹半导体(无锡)有限公司 | Ring taking device and method for ring cutting process of Taiko thinning |
| CN114551303A (en) * | 2022-02-24 | 2022-05-27 | 江苏京创先进电子科技有限公司 | Wafer cleaning device, wafer cleaning method and Taizhou ring cutting equipment |
| CN117238832A (en) * | 2023-11-14 | 2023-12-15 | 江苏京创先进电子科技有限公司 | Method, system, equipment and mechanism for removing rings of Taihe wafer |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113211661A (en) * | 2021-04-16 | 2021-08-06 | 华虹半导体(无锡)有限公司 | Ring taking device and method for ring cutting process of Taiko thinning |
| CN113172778A (en) * | 2021-04-28 | 2021-07-27 | 华虹半导体(无锡)有限公司 | Taizhou ring removing method and positioning device for Taizhou ring removing |
| CN114551303A (en) * | 2022-02-24 | 2022-05-27 | 江苏京创先进电子科技有限公司 | Wafer cleaning device, wafer cleaning method and Taizhou ring cutting equipment |
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| CN117238832A (en) * | 2023-11-14 | 2023-12-15 | 江苏京创先进电子科技有限公司 | Method, system, equipment and mechanism for removing rings of Taihe wafer |
| CN117238832B (en) * | 2023-11-14 | 2024-02-02 | 江苏京创先进电子科技有限公司 | Method, system, equipment and mechanism for removing rings of Taihe wafer |
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