CN112467016A - Flexible packaging heat dissipation structure of Mini LED and manufacturing method thereof - Google Patents
Flexible packaging heat dissipation structure of Mini LED and manufacturing method thereof Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 61
- 238000009459 flexible packaging Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 161
- 239000001301 oxygen Substances 0.000 claims abstract description 161
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 161
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 160
- 230000004888 barrier function Effects 0.000 claims abstract description 93
- 239000002245 particle Substances 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000741 silica gel Substances 0.000 claims abstract description 39
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000011324 bead Substances 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 212
- 238000000034 method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 239000000499 gel Substances 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 14
- 150000004706 metal oxides Chemical class 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011049 pearl Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- -1 ITO Chemical class 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
The invention relates to the technical field of Mini LED, in particular to a flexible packaging heat dissipation structure of a Mini LED and a manufacturing method thereof, which comprises a glass substrate and more than two LED lamp beads, a TFT driving device layer, an organic silica gel layer, a first water oxygen barrier layer, an organic buffer layer and a second water oxygen barrier layer are sequentially stacked on one side face of a glass substrate, an LED lamp bead comprises an LED chip and two electrode PIN PINs, the two electrode PIN PINs are embedded in the organic silica gel layer, one end of each electrode PIN extends out of the organic silica gel layer to be in contact with the first water oxygen barrier layer, a gap is arranged between the two electrode PIN PINs, water oxygen absorption particles are filled in the gap, a heat dissipation column is connected to each electrode PIN PIN, therefore, the temperature inside the panel can be uniformly and effectively diffused, the stability of the metal oxide TFT driver is improved, the service life of devices is prolonged, and the display effect with higher resolution and flexibility is realized.
Description
Technical Field
The invention relates to the technical field of Mini LEDs, in particular to a flexible packaging heat dissipation structure of a Mini LED and a manufacturing method thereof.
Background
Mini LED (also called Mini Light Emitting Diode) is a sub-millimeter LED with a grain size of about 50 μm to 200 μm, and has the characteristics of being Light and thin, low power consumption, good flexibility, high flexibility, good color gamut range, fine adjustment of Light-adjusting partition energy, higher HDR, high contrast, and realization of narrow-frame full-screen display devices, and has become the key focus of market attention.
The Mini LED chip production comprises the processes of epitaxial wafer manufacturing, electrode manufacturing, chip manufacturing, testing and the like. Mini LED requires the LED die size to be reduced
And (3) a range. The backlight source technology adopts a flip-chip packaging mode, so that the problem that the traditional side-entry backlight needs a lens secondary optical design is avoided, uniform light mixing is realized, and a higher contrast effect is achieved; in addition, the backlight of the Mini LED realizes dynamic regional dimming through array driving, higher and more precise color modulation is realized, the contrast of an LCD screen is higher, and the picture display effect is improved;
mini LED is high in backlight brightness, and is higher than OLED power consumption, and along with the reduction of chip size, positive and negative electrodes cover most areas on the surface of a chip, and the LED chip emits light and heat for a long time, so that heat is easily concentrated in the glass substrate and cannot be dissipated, and a lower TFT driving device layer runs at a high temperature state for a long time, and the service life of a TFT driver and the stability of supply current are influenced.
At present, a Mini LED screen is mostly driven by a metal oxide TFT, but the metal oxide TFT adopts an IGZO film as an active layer, the IGZO film is sensitive to water and oxygen, in the packaging process of the Mini LED screen, the LED lamp beads are packaged by coating silica gel after being solidified, the water and oxygen blocking capability of the silica gel is poor, and the IGZO film is easy to cause device failure due to water and oxygen infection.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a flexible packaging heat dissipation structure of a Mini LED and a manufacturing method thereof are provided.
In order to solve the above technical problems, a first technical solution adopted by the present invention is:
the utility model provides a Mini LED's flexible packaging heat radiation structure, includes glass substrate and two LED lamp pearls more than stack gradually on glass substrate's a side and be equipped with TFT drive device layer, organic silica gel layer, first water oxygen barrier layer, organic buffer layer and second water oxygen barrier layer, LED lamp pearl includes LED chip and two electrode PIN feet, the one end of LED chip contacts with two electrode PIN feet respectively, with the other end that the one end of LED chip is relative runs through first water oxygen barrier layer, organic buffer layer and second water oxygen barrier layer in proper order, two electrode PIN foot all inlays establishes in organic silica gel layer and the one end of electrode PIN foot stretches out organic silica gel layer and first water oxygen barrier layer contact, two be equipped with the clearance between the electrode PIN foot, it has water oxygen absorption particle, every to be connected with a heat dissipation post on the electrode PIN foot, the one end that the electrode PIN foot was kept away from to the heat dissipation post passes first water oxygen barrier layer and organic buffer layer to second water oxygen barrier layer in proper order In the water oxygen barrier layer.
The second technical scheme adopted by the invention is as follows:
a manufacturing method of a flexible packaging heat dissipation structure of a Mini LED comprises the following steps:
step S1, providing a glass substrate, wherein a TFT driving device layer covers one side of the glass substrate;
step S2, more than two water oxygen absorption particles are formed and cover the surface of the TFT driving device layer;
s3, forming more than two LED lamp beads and covering the surfaces of the TFT driving device layers; the LED lamp bead comprises an LED chip and two electrode PIN feet, one end of the LED chip is respectively contacted with the two electrode PIN feet, the two electrode PIN feet are embedded in the organic silica gel layer, one end of each electrode PIN foot extends out of the organic silica gel layer, a gap is arranged between the two electrode PIN feet, and water and oxygen absorption particles are filled in the gap;
step S4, forming an organic silicon adhesive layer and covering the surface of the TFT driving device layer;
step S5, forming a first water oxygen barrier layer and covering the surface of the organic silicon gel layer;
step S6, forming a heat dissipation column on each electrode PIN;
step S7, forming an organic buffer layer, and covering the surface of the first water oxygen barrier layer;
and step S8, forming a second water oxygen barrier layer and covering the surface of the organic buffer layer.
The invention has the beneficial effects that:
by arranging more than two LED lamp beads, each LED lamp bead comprises an LED chip and two electrode PIN feet, the other end, opposite to one end of the LED chip, sequentially penetrates through a first water oxygen barrier layer, an organic buffer layer and a second water oxygen barrier layer, the two electrode PIN feet are embedded in the organic silica gel layer, one ends of the electrode PIN feet extend out of the organic silica gel layer to be contacted with the first water oxygen barrier layer, a gap is formed between the two electrode PIN feet, water oxygen absorption particles are filled in the gap, each electrode PIN foot is connected with a heat dissipation column, one end, far away from the electrode PIN feet, of each heat dissipation column sequentially penetrates through the first water oxygen barrier layer and the organic buffer layer to the second water oxygen barrier layer, so that the temperature inside a panel can be uniformly and effectively dissipated, the stability and the service life of a device of a metal oxide TFT driver are improved, and a higher resolution and a flexible display; the first water oxygen barrier layer and the second water oxygen barrier layer are used for preventing external water oxygen from entering the inside of the Mini LED display, oxidizing and corroding an electrode bonding pad (namely an electrode PIN foot) of an LED chip and a TFT driving device layer, the organic buffer layer is used as a neutral layer to relieve stress concentration of upper and lower laminated layers, fill up defects in an inorganic film, prolong a water oxygen diffusion path and realize flexible display of high brightness and high contrast of the Mini LED; the flexible packaging heat dissipation structure of the Mini LED can improve the heat dissipation speed of the Mini LED display, stabilize the working environment of the Mini LED display, improve the capability of isolating water and oxygen of the Mini LED display by adopting flexible film packaging, and realize the high brightness and high contrast flexible display of the Mini LED display.
Drawings
Fig. 1 is a schematic structural diagram of a flexible package heat dissipation structure of a Mini LED according to the present invention;
fig. 2 is a flowchart illustrating steps of a method for manufacturing a flexible package heat dissipation structure of a Mini LED according to the present invention;
fig. 3 is a process flow chart of a manufacturing method of a flexible packaging heat dissipation structure of a Mini LED according to the present invention;
description of reference numerals:
1. a glass substrate; 2. a TFT drive device layer; 3. an organic silica gel layer; 4. a first water oxygen barrier layer; 5. an organic buffer layer; 6. a second water oxygen barrier layer; 7. an LED chip; 8. an electrode PIN; 9. water oxygen absorbing particles; 10. a heat-dissipating stud.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, a technical solution provided by the present invention:
the utility model provides a Mini LED's flexible packaging heat radiation structure, includes glass substrate and two LED lamp pearls more than stack gradually on glass substrate's a side and be equipped with TFT drive device layer, organic silica gel layer, first water oxygen barrier layer, organic buffer layer and second water oxygen barrier layer, LED lamp pearl includes LED chip and two electrode PIN feet, the one end of LED chip contacts with two electrode PIN feet respectively, with the other end that the one end of LED chip is relative runs through first water oxygen barrier layer, organic buffer layer and second water oxygen barrier layer in proper order, two electrode PIN foot all inlays establishes in organic silica gel layer and the one end of electrode PIN foot stretches out organic silica gel layer and first water oxygen barrier layer contact, two be equipped with the clearance between the electrode PIN foot, it has water oxygen absorption particle, every to be connected with a heat dissipation post on the electrode PIN foot, the one end that the electrode PIN foot was kept away from to the heat dissipation post passes first water oxygen barrier layer and organic buffer layer to second water oxygen barrier layer in proper order In the water oxygen barrier layer.
From the above description, the beneficial effects of the present invention are:
by arranging more than two LED lamp beads, each LED lamp bead comprises an LED chip and two electrode PIN feet, the other end, opposite to one end of the LED chip, sequentially penetrates through a first water oxygen barrier layer, an organic buffer layer and a second water oxygen barrier layer, the two electrode PIN feet are embedded in the organic silica gel layer, one ends of the electrode PIN feet extend out of the organic silica gel layer to be contacted with the first water oxygen barrier layer, a gap is formed between the two electrode PIN feet, water oxygen absorption particles are filled in the gap, each electrode PIN foot is connected with a heat dissipation column, one end, far away from the electrode PIN feet, of each heat dissipation column sequentially penetrates through the first water oxygen barrier layer and the organic buffer layer to the second water oxygen barrier layer, so that the temperature inside a panel can be uniformly and effectively dissipated, the stability and the service life of a device of a metal oxide TFT driver are improved, and a higher resolution and a flexible display; the first water oxygen barrier layer and the second water oxygen barrier layer are used for preventing external water oxygen from entering the inside of the Mini LED display, oxidizing and corroding an electrode bonding pad (namely an electrode PIN foot) of an LED chip and a TFT driving device layer, the organic buffer layer is used as a neutral layer to relieve stress concentration of upper and lower laminated layers, fill up defects in an inorganic film, prolong a water oxygen diffusion path and realize flexible display of high brightness and high contrast of the Mini LED; the flexible packaging heat dissipation structure of the Mini LED can improve the heat dissipation speed of the Mini LED display, stabilize the working environment of the Mini LED display, improve the capability of isolating water and oxygen of the Mini LED display by adopting flexible film packaging, and realize the high brightness and high contrast flexible display of the Mini LED display.
Further, the height of the heat dissipation column ranges from 2 μm to 4 μm.
From the above description, it can be known that setting the height range of the heat dissipation pillar to 2 μm-4 μm can uniformly and effectively dissipate the temperature inside the panel, further improve the stability and device lifetime of the metal oxide TFT driver, and achieve a higher resolution and flexible display effect.
Further, the shape of the water and oxygen absorbing particles is circular, and the diameter range of the water and oxygen absorbing particles is
As can be seen from the above description, the water oxygen absorbing particlesThe metal oxide TFT driving device is stabilized by absorbing water and oxygen permeating into the LED lamp beads, preventing the water and oxygen from corroding an electrode pad (namely an electrode PIN foot) and a lower TFT driving device layer, and setting the diameter range of water and oxygen absorbing particles to be
The brightness uniformity of the whole display screen can be further improved.
Further, the height range of the electrode PIN foot is 1.5-2.5 μm, and the thickness range of the organic silica gel layer is 1-2 μm.
Further, the thickness of the first water oxygen barrier layer ranges from 0.1 μm to 0.2 μm.
From the above description, the water and oxygen barrier layer is beneficial to isolating external water and oxygen from invading into the display device and protecting the good display of the Mini LED display screen, and the brightness uniformity of the whole display screen can be further improved by setting the thickness range of the first water and oxygen barrier layer to be 0.1-0.2 μm.
Referring to fig. 2, another technical solution provided by the present invention:
a manufacturing method of a flexible packaging heat dissipation structure of a Mini LED comprises the following steps:
step S1, providing a glass substrate, wherein a TFT driving device layer covers one side of the glass substrate;
step S2, more than two water oxygen absorption particles are formed and cover the surface of the TFT driving device layer;
s3, forming more than two LED lamp beads and covering the surfaces of the TFT driving device layers; the LED lamp bead comprises an LED chip and two electrode PIN feet, one end of the LED chip is respectively contacted with the two electrode PIN feet, the two electrode PIN feet are embedded in the organic silica gel layer, one end of each electrode PIN foot extends out of the organic silica gel layer, a gap is arranged between the two electrode PIN feet, and water and oxygen absorption particles are filled in the gap;
step S4, forming an organic silicon adhesive layer and covering the surface of the TFT driving device layer;
step S5, forming a first water oxygen barrier layer and covering the surface of the organic silicon gel layer;
step S6, forming a heat dissipation column on each electrode PIN;
step S7, forming an organic buffer layer, and covering the surface of the first water oxygen barrier layer;
and step S8, forming a second water oxygen barrier layer and covering the surface of the organic buffer layer.
From the above description, the beneficial effects of the present invention are:
the manufacturing method of the Mini LED flexible packaging heat dissipation structure can improve the heat dissipation speed of the Mini LED display, stabilize the working environment of the Mini LED display, improve the water and oxygen isolation capability of the Mini LED display by adopting flexible film packaging, and realize high brightness and high contrast flexible display of the Mini LED display.
Further, the height of the heat dissipation column ranges from 2 μm to 4 μm.
From the above description, it can be known that setting the height range of the heat dissipation pillar to 2 μm-4 μm can uniformly and effectively dissipate the temperature inside the panel, further improve the stability and device lifetime of the metal oxide TFT driver, and achieve a higher resolution and flexible display effect.
Further, the shape of the water and oxygen absorbing particles is circular, and the diameter range of the water and oxygen absorbing particles is
As can be seen from the above description, the water and oxygen absorbing particles are used for absorbing water and oxygen permeating into the LED lamp bead, preventing the water and oxygen from corroding the electrode pad (i.e. the electrode PIN) and the lower TFT driving device layer, stabilizing the lower metal oxide TFT driving device, and setting the diameter range of the water and oxygen absorbing particles as
The brightness uniformity of the whole display screen can be further improved.
Further, the height range of the electrode PIN foot is 1.5-2.5 μm, and the thickness range of the organic silica gel layer is 1-2 μm.
Further, the thickness of the first water oxygen barrier layer ranges from 0.1 μm to 0.2 μm.
From the above description, the water and oxygen barrier layer is beneficial to isolating external water and oxygen from invading into the display device and protecting the good display of the Mini LED display screen, and the brightness uniformity of the whole display screen can be further improved by setting the thickness range of the first water and oxygen barrier layer to be 0.1-0.2 μm.
Referring to fig. 1, a first embodiment of the present invention is:
a flexible packaging heat dissipation structure of a Mini LED comprises a glass substrate 1 and more than two LED lamp beads, wherein a TFT driving device layer 2, an organic silica gel layer 3, a first water oxygen barrier layer 4, an organic buffer layer 5 and a second water oxygen barrier layer 6 are sequentially stacked on one side face of the glass substrate 1, each LED lamp bead comprises an LED chip 7 and two electrode PIN PINs 8, one end of each LED chip 7 is respectively contacted with the two electrode PIN PINs 8, the other end opposite to one end of each LED chip 7 sequentially penetrates through the first water oxygen barrier layer 4, the organic buffer layer 5 and the second water oxygen barrier layer 6, the two electrode PIN PINs 8 are embedded in the organic silica gel layer 3, one end of each electrode PIN PIN 8 extends out of the organic silica gel layer 3 to be contacted with the first water oxygen barrier layer 4, a gap is arranged between the two electrode PIN PINs 8, and water oxygen absorption particles 9 are filled in the gap, every be connected with a heat dissipation post 10 on the electrode PIN foot 8, the one end that electrode PIN foot 8 was kept away from to heat dissipation post 10 passes in first water oxygen barrier layer 4 and organic buffer layer 5 to second water oxygen barrier layer 6 in proper order.
The height of the heat dissipation pillar 10 is in the range of 2 μm to 4 μm, preferably 3 μm, and the material rating is not limited to silver, but may be other transparent metal oxides (e.g., ITO, AZO, etc.).
The shape of the water and oxygen absorbing particles 9 is circular, and the diameter range of the water and oxygen absorbing particles 9 is
The particles may have a size of
Or
Or
Or
Preferably, it is
The back surface of the LED lamp bead array-type distributed glass substrate 1 is positioned above the water and oxygen absorption particles 9, the electrode PIN 8 of the LED chip 7 is connected with the corresponding driving electrode, and the nano water and oxygen absorption particles 9 are used for independently absorbing the water and oxygen in the LED chip 7 at the corresponding position to independently protect the corresponding LED chip 7 from continuously spreading the water and oxygen all around.
The height range of the electrode PIN foot 8 is 1.5-2.5 μm, preferably 2 μm;
the thickness range of the organic silica gel layer 3 is 1-2 μm, preferably 1.5 μm, and the organic silica gel layer 3 can be obtained by spray deposition through an IJP (ink jet printing) machine.
The thickness of the first water oxygen barrier layer 4 ranges from 0.1 μm to 0.2 μm, and is preferably 0.15 μm; the first water oxygen barrier layer 4 may be obtained by PECVD (chemical vapor deposition);
the thickness of the second water oxygen barrier layer 6 ranges from 0.1 μm to 0.2 μm, and is preferably 0.15 μm; the second water oxygen barrier layer 6 may be obtained by PECVD (chemical vapor deposition);
the material of the first water oxygen barrier layer 4 is the same as that of the second water oxygen barrier layer 6, and the material is not limited to SiNx、SiO2SiNC and Al2O3And the like inorganic compounds; the first water oxygen barrier layer 4 and the second water oxygen barrier layer 6 are used for preventing external water oxygen from entering the Mini LED display, oxidizing and corroding the electrode bonding pad of the LED chip 7 and the TFT driving device layer 2 on the front surface of the glass substrate 1, and the organic buffer layer 5 is used for makingThe neutral layer is used for relieving stress concentration of the upper lamination layer and the lower lamination layer, filling up defects in the inorganic film, prolonging the water and oxygen diffusion path and realizing the high-brightness and high-contrast flexible display of the Mini LED.
The thickness of the organic buffer layer 5 is in the range of 1 μm to 2 μm, preferably 1.5 μm, and the material thereof is not limited to PI (i.e., polyimide).
The Mini LED's of this scheme design flexible packaging heat radiation structure possesses the hi-lite, can adjust the subregion of adjusting luminance more meticulously, improves the contrast of display screen to possess the function of isolated water oxygen and the absorptive function of water oxygen, add the structure of heat dissipation post 10, can distribute the inside temperature of panel effectively evenly and improve metal oxide TFT drive device's stability and device life-span, realize higher resolution and flexible display effect.
Referring to fig. 2 and fig. 3, a second embodiment of the present invention is:
referring to fig. 2, a method for manufacturing a flexible package heat dissipation structure of a Mini LED includes the following steps:
step S1, providing a glass substrate 1, and covering one side surface of the glass substrate 1 with a TFT driving device layer 2;
step S2, forming more than two water oxygen absorption particles 9 which cover the surface of the TFT driving device layer 2;
step S3, more than two LED lamp beads are formed and cover the surface of the TFT driving device layer 2; the LED lamp bead comprises an LED chip 7 and two electrode PIN feet 8, one end of the LED chip 7 is respectively contacted with the two electrode PIN feet 8, the two electrode PIN feet 8 are embedded in the organic silica gel layer 3, one end of each electrode PIN foot 8 extends out of the organic silica gel layer 3, a gap is formed between the two electrode PIN feet 8, and water and oxygen absorption particles 9 are filled in the gap;
step S4, forming an organic silicon adhesive layer 3, and covering the surface of the TFT driving device layer 2;
step S5, forming a first water oxygen barrier layer 4 and covering the surface of the organic silicon rubber layer 3;
step S6, forming a heat dissipation column 10 on each of the PIN PINs 8;
step S7, forming an organic buffer layer 5, and covering the surface of the first water oxygen barrier layer 4;
and step S8, forming a second water oxygen barrier layer 6 covering the surface of the organic buffer layer 5.
The height of the heat dissipation pillar 10 is in the range of 2 μm to 4 μm, preferably 3 μm, and the material rating is not limited to silver, but may be other transparent metal oxides (e.g., ITO, AZO, etc.).
The shape of the water and oxygen absorbing particles 9 is circular, and the diameter range of the water and oxygen absorbing particles 9 is
Preferably, it is
The height range of the electrode PIN foot 8 is 1.5-2.5 μm, preferably 2 μm;
the thickness of the organic silicon glue layer 3 ranges from 1 μm to 2 μm, and is preferably 1.5 μm.
The thickness of the first water oxygen barrier layer 4 ranges from 0.1 μm to 0.2 μm, and is preferably 0.15 μm;
the thickness of the second water oxygen barrier layer 6 ranges from 0.1 μm to 0.2 μm, and is preferably 0.15 μm;
the material of the first water oxygen barrier layer 4 is the same as that of the second water oxygen barrier layer 6, and the material is not limited to SiNx、SiO2SiNC and Al2O3And the like.
The thickness of the organic buffer layer 5 is in the range of 1 μm to 2 μm, preferably 1.5 μm, and the material thereof is not limited to PI (i.e., polyimide).
Referring to fig. 3, a specific embodiment of the method for manufacturing the flexible package heat dissipation structure of the Mini LED includes:
the method comprises the following steps: by forming the TFT driving device layer 2 on the front surface of the glass substrate 1 and then coating a layer of water and oxygen absorbing particles 9 on the back surface of the glass substrate 1 at the position corresponding to the LED chip 7, the material of the layer of water and oxygen absorbing particles 9 is not limited to nano graphiteAlkene particles or nanosilver particles; the particles may have a size of
Or
Or
Or
Preferably, it is
Then, the back surface of the glass substrate 1 with the LED lamp beads distributed in an array manner is positioned above the water and oxygen absorption particles 9, the electrode PIN 8 of the LED chip 7 is connected with the corresponding driving electrode, and the nano water and oxygen absorption particles 9 are used for independently absorbing the water and oxygen in the LED chip 7 at the corresponding position to independently protect the corresponding LED chip 7 from continuously spreading the water and oxygen to the periphery;
step two: on the basis of the first step, coating organic silica gel by a Coater to be cured to form an organic silica gel layer 3, wherein the height of the cured organic silica gel does not completely cover the height of the electrode PIN 8, then sputtering a metal heat dissipation layer by PVD (physical vapor deposition), the material of the metal heat dissipation layer is not limited to metal silver and transparent metal oxide (ITO, AZO and the like), and the metal heat dissipation layer is exposed, developed, etched and stripped to form a heat dissipation column 10;
step three: on the basis of the second step, a first water oxygen barrier layer 4 is deposited through PECVD (chemical vapor deposition) to carry out thin film packaging and water oxygen isolation, an organic buffer layer 5 is deposited on the first water oxygen barrier layer 4 through IJP (ink jet printing) machine spraying, and finally a second water oxygen barrier layer 6 is deposited on the organic buffer layer 5 through PECVD (chemical vapor deposition), wherein the first water oxygen barrier layer 4 and the second water oxygen barrier layer 6 are used for preventing external water oxygen from entering the Mini LED display, oxidizing and corroding an electrode pad of the LED chip 7 and a TFT driving device layer 2 on the front side of the glass substrate 1, and the organic buffer layer 5 is used as a neutral layer to relieve stress concentration of upper and lower laminated layers, fill up defects in an inorganic thin film, prolong a water oxygen diffusion path and realize flexible display of high brightness and high contrast of the Mini LED.
In summary, the flexible packaging heat dissipation structure of a Mini LED and the manufacturing method thereof provided by the present invention, by providing two or more LED lamp beads, each LED lamp bead comprises an LED chip and two electrode PIN legs, the other end of the LED chip opposite to one end sequentially penetrates through a first water oxygen barrier layer, an organic buffer layer and a second water oxygen barrier layer, the two electrode PIN legs are embedded in an organic silica gel layer, one end of each electrode PIN leg extends out of the organic silica gel layer and contacts with the first water oxygen barrier layer, a gap is provided between the two electrode PIN legs, water oxygen absorbing particles are filled in the gap, each electrode PIN leg is connected with a heat dissipation column, one end of each heat dissipation column, which is far away from the electrode PIN leg, sequentially penetrates through the first water oxygen barrier layer and the organic buffer layer to the second water oxygen barrier layer, so that the temperature inside the panel can be uniformly and effectively dissipated, the stability of the metal oxide TFT driver and the device life are improved, the display effect of higher resolution and flexibility is realized; the first water oxygen barrier layer and the second water oxygen barrier layer are used for preventing external water oxygen from entering the inside of the Mini LED display, oxidizing and corroding an electrode bonding pad (namely an electrode PIN foot) of an LED chip and a TFT driving device layer, the organic buffer layer is used as a neutral layer to relieve stress concentration of upper and lower laminated layers, fill up defects in an inorganic film, prolong a water oxygen diffusion path and realize flexible display of high brightness and high contrast of the Mini LED; the flexible packaging heat dissipation structure of the Mini LED can improve the heat dissipation speed of the Mini LED display, stabilize the working environment of the Mini LED display, improve the capability of isolating water and oxygen of the Mini LED display by adopting flexible film packaging, and realize the high brightness and high contrast flexible display of the Mini LED display.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. A Mini LED flexible packaging heat dissipation structure is characterized by comprising a glass substrate and more than two LED lamp beads, wherein a TFT driving device layer, an organic silica gel layer, a first water oxygen barrier layer, an organic buffer layer and a second water oxygen barrier layer are sequentially stacked on one side face of the glass substrate, each LED lamp bead comprises an LED chip and two electrode PIN PINs, one end of each LED chip is respectively contacted with the two electrode PIN PINs, the other end opposite to one end of each LED chip sequentially penetrates through the first water oxygen barrier layer, the organic buffer layer and the second water oxygen barrier layer, the two electrode PIN PINs are embedded in the organic silica gel layer, one ends of the electrode PIN PINs extend out of the organic silica gel layer to be contacted with the first water oxygen barrier layer, a gap is arranged between the two electrode PIN PINs, water oxygen absorption particles are filled in the gap, and each electrode PIN PIN is connected with a heat dissipation column, one end of the heat dissipation column, which is far away from the PIN foot of the electrode, sequentially penetrates through the first water oxygen barrier layer and the organic buffer layer to the second water oxygen barrier layer.
2. The flexible packaging and heat dissipation structure of Mini LED as recited in claim 1, wherein the height of said heat dissipation pillar is in the range of 2 μm to 4 μm.
3. The flexible packaging and heat dissipating structure of Mini LED as claimed in claim 1, wherein the water and oxygen absorbing particles are circular in shape and have a diameter in the range of
4. The flexible packaging and heat dissipation structure of the Mini LED as recited in claim 1, wherein the height of the PIN is in the range of 1.5 μm to 2.5 μm, and the thickness of the silicone gel layer is in the range of 1 μm to 2 μm.
5. The flexible packaging and heat dissipation structure of a Mini LED as recited in claim 1, wherein the first water and oxygen barrier layer has a thickness in the range of 0.1 μm to 0.2 μm.
6. The manufacturing method of the Mini LED flexible packaging heat dissipation structure of claim 1, comprising the following steps:
step S1, providing a glass substrate, wherein a TFT driving device layer covers one side of the glass substrate;
step S2, more than two water oxygen absorption particles are formed and cover the surface of the TFT driving device layer;
s3, forming more than two LED lamp beads and covering the surfaces of the TFT driving device layers; the LED lamp bead comprises an LED chip and two electrode PIN feet, one end of the LED chip is respectively contacted with the two electrode PIN feet, the two electrode PIN feet are embedded in the organic silica gel layer, one end of each electrode PIN foot extends out of the organic silica gel layer, a gap is arranged between the two electrode PIN feet, and water and oxygen absorption particles are filled in the gap;
step S4, forming an organic silicon adhesive layer and covering the surface of the TFT driving device layer;
step S5, forming a first water oxygen barrier layer and covering the surface of the organic silicon gel layer;
step S6, forming a heat dissipation column on each electrode PIN;
step S7, forming an organic buffer layer, and covering the surface of the first water oxygen barrier layer;
and step S8, forming a second water oxygen barrier layer and covering the surface of the organic buffer layer.
7. The method for manufacturing a flexible packaging heat dissipation structure of a Mini LED as recited in claim 6, wherein the height of the heat dissipation pillar is in the range of 2 μm to 4 μm.
8. The method for manufacturing the flexible packaging and heat dissipating structure of the Mini LED as claimed in claim 6, wherein the water and oxygen absorbing particles are circular in shape, and the water and oxygen absorbing particles absorb water and oxygenThe diameter of the particles is in the range of
9. The manufacturing method of the flexible packaging heat dissipation structure of the Mini LED as recited in claim 6, wherein the height of the PIN is in a range of 1.5 μm to 2.5 μm, and the thickness of the silicone layer is in a range of 1 μm to 2 μm.
10. The method of claim 6, wherein the first water-oxygen barrier layer has a thickness in the range of 0.1 μm to 0.2 μm.
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916821A (en) * | 2010-07-14 | 2010-12-15 | 四川九洲光电科技股份有限公司 | High-power packaged SMD LED (Surface Mounted Device Light-Emitting Diode) with high heat radiation property |
| KR20120039375A (en) * | 2010-10-15 | 2012-04-25 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display and method for fabricating of the same |
| US8350251B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
| CN104779339A (en) * | 2015-01-15 | 2015-07-15 | 大连德豪光电科技有限公司 | Inverted high-voltage LED chip and preparation method thereof |
| CN204596843U (en) * | 2015-01-15 | 2015-08-26 | 大连德豪光电科技有限公司 | Upside-down mounting high voltage LED chip |
| US10141541B1 (en) * | 2017-05-25 | 2018-11-27 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Package component of an OLED device and a package method thereof, and a display device |
| US20180363135A1 (en) * | 2017-06-19 | 2018-12-20 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Encapsulation method for oled panel |
| US20180374904A1 (en) * | 2017-06-21 | 2018-12-27 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display device and manufacturing method thereof |
| WO2019041386A1 (en) * | 2017-08-28 | 2019-03-07 | 武汉华星光电半导体显示技术有限公司 | Method for manufacturing oled panel, and oled panel |
| CN109786573A (en) * | 2018-12-29 | 2019-05-21 | 厦门天马微电子有限公司 | Display panel and its manufacturing method and display device |
| WO2019127689A1 (en) * | 2017-12-26 | 2019-07-04 | 武汉华星光电半导体显示技术有限公司 | Array substrate and manufacturing method therefor, and flexible oled display device |
| US20200028115A1 (en) * | 2017-10-17 | 2020-01-23 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of encapsulating a flexible oled panel and encapsulation structure |
| WO2020207100A1 (en) * | 2019-04-12 | 2020-10-15 | 南京福仕保新材料有限公司 | Structure having effects of improving packaging efficiency and detecting packaging effect in organic electronic device packaging |
| CN214123908U (en) * | 2020-11-16 | 2021-09-03 | 福建华佳彩有限公司 | Flexible packaging heat radiation structure of Mini LED |
-
2020
- 2020-11-16 CN CN202011276053.8A patent/CN112467016A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916821A (en) * | 2010-07-14 | 2010-12-15 | 四川九洲光电科技股份有限公司 | High-power packaged SMD LED (Surface Mounted Device Light-Emitting Diode) with high heat radiation property |
| KR20120039375A (en) * | 2010-10-15 | 2012-04-25 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display and method for fabricating of the same |
| US8350251B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
| CN104779339A (en) * | 2015-01-15 | 2015-07-15 | 大连德豪光电科技有限公司 | Inverted high-voltage LED chip and preparation method thereof |
| CN204596843U (en) * | 2015-01-15 | 2015-08-26 | 大连德豪光电科技有限公司 | Upside-down mounting high voltage LED chip |
| US10141541B1 (en) * | 2017-05-25 | 2018-11-27 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Package component of an OLED device and a package method thereof, and a display device |
| US20180363135A1 (en) * | 2017-06-19 | 2018-12-20 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Encapsulation method for oled panel |
| US20180374904A1 (en) * | 2017-06-21 | 2018-12-27 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display device and manufacturing method thereof |
| WO2019041386A1 (en) * | 2017-08-28 | 2019-03-07 | 武汉华星光电半导体显示技术有限公司 | Method for manufacturing oled panel, and oled panel |
| US20200028115A1 (en) * | 2017-10-17 | 2020-01-23 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of encapsulating a flexible oled panel and encapsulation structure |
| WO2019127689A1 (en) * | 2017-12-26 | 2019-07-04 | 武汉华星光电半导体显示技术有限公司 | Array substrate and manufacturing method therefor, and flexible oled display device |
| CN109786573A (en) * | 2018-12-29 | 2019-05-21 | 厦门天马微电子有限公司 | Display panel and its manufacturing method and display device |
| WO2020207100A1 (en) * | 2019-04-12 | 2020-10-15 | 南京福仕保新材料有限公司 | Structure having effects of improving packaging efficiency and detecting packaging effect in organic electronic device packaging |
| CN214123908U (en) * | 2020-11-16 | 2021-09-03 | 福建华佳彩有限公司 | Flexible packaging heat radiation structure of Mini LED |
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