CN112466980A - Silicon carbide cell - Google Patents
Silicon carbide cell Download PDFInfo
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- CN112466980A CN112466980A CN202011308295.0A CN202011308295A CN112466980A CN 112466980 A CN112466980 A CN 112466980A CN 202011308295 A CN202011308295 A CN 202011308295A CN 112466980 A CN112466980 A CN 112466980A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 178
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 140
- 238000010521 absorption reaction Methods 0.000 claims abstract description 100
- 239000000463 material Substances 0.000 claims abstract description 74
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 20
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 20
- 150000004820 halides Chemical class 0.000 claims abstract description 20
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 19
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 230000032258 transport Effects 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 claims 2
- 230000007547 defect Effects 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000004888 barrier function Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 323
- 239000002346 layers by function Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical class [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention provides a silicon carbide cell, and relates to the technical field of solar photovoltaics. The silicon carbide cell includes: an electron selective contact layer, a hole selective contact layer, a silicon carbide absorption layer; a first interface layer is arranged between the electron selective contact layer and the silicon carbide absorption layer; and/or a second interface layer is arranged between the hole selective contact layer and the silicon carbide absorption layer; the materials of the first interface layer and the second interface layer are selected from at least one of alkali metals, alkaline earth metals, halides of alkali metals and halides of alkaline earth metals. The first interface layer and/or the second interface layer passivates defects of a contact region of metal and the silicon carbide material, reduces a contact interface barrier, reduces series resistance, and improves photoelectric conversion efficiency of the silicon carbide battery.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a silicon carbide cell.
Background
The intermediate band photovoltaic device has a wide application prospect because the intermediate band absorption layer contained in the intermediate band photovoltaic device can realize higher photoelectric conversion efficiency.
At present, the material of the intermediate band absorption layer mainly comprises quantum dots, point-like or layered materials such as superlattice and the like, and bulk silicon carbide materials. The dot-shaped or layered materials such as quantum dots, superlattice and the like have the defects of high internal defect density, difficult preparation and the like. Silicon carbide has attracted attention as a bulk intermediate band material because it has advantages such as few bulk defects and a stable intermediate band structure.
However, the inventor finds in the research process that: the silicon carbide material is used as an intermediate band absorption layer, the contact interface barrier causes large series resistance and more defects in the contact area of metal and the silicon carbide material, and the photoelectric conversion efficiency of the silicon carbide battery is reduced due to the factors.
Disclosure of Invention
The invention provides a silicon carbide cell, aiming at solving the problem of the reduction of photoelectric conversion efficiency of the silicon carbide cell.
According to a first aspect of the present invention, there is provided a silicon carbide cell comprising: an electron selective contact layer, a hole selective contact layer, a silicon carbide absorption layer; the electron selective contact layer selectively transports electrons; the hole selective contact layer selectively transports holes; the silicon carbide absorption layer comprises a silicon carbide material with an intermediate band;
a first interface layer is arranged between the electron selective contact layer and the silicon carbide absorption layer; and/or a second interface layer is arranged between the hole selective contact layer and the silicon carbide absorption layer;
the materials of the first interface layer and the second interface layer are selected from at least one of alkali metals, alkaline earth metals, halides of alkali metals and halides of alkaline earth metals.
In the present application, a first interface layer is provided between the silicon carbide absorption layer and the electron selective contact layer, and/or a second interface layer is provided between the silicon carbide absorption layer and the hole selective contact layer. The materials of the first interface layer and the second interface layer are selected from at least one of alkali metals, alkaline earth metals, halides of the alkali metals and halides of the alkaline earth metals, and the defects of the contact area of the metals and the silicon carbide materials can be fully passivated by the first interface layer of the materials and/or the second interface layer of the materials, so that the contact interface barrier is reduced, the series resistance is further reduced, and the photoelectric conversion efficiency of the silicon carbide battery can be further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other solutions can be obtained according to the drawings without inventive labor.
Fig. 1 shows a schematic view of the structure of a first type of silicon carbide cell in an embodiment of the invention;
fig. 2 shows a schematic view of a second type of silicon carbide cell in an embodiment of the invention;
fig. 3 shows a schematic view of a third silicon carbide cell in an embodiment of the invention.
Description of the figure numbering:
the solar cell comprises a silicon carbide absorption layer 1, an electron selective contact layer 2, a hole selective contact layer 3, a first interface layer 21, a second interface layer 31, a negative electrode 4, a positive electrode 5, an upper functional layer 6 and a lower functional layer 7.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 shows a schematic view of the structure of a first silicon carbide cell in an embodiment of the present invention. Referring to fig. 1, the silicon carbide cell includes: silicon carbide absorption layer 1, electron selective contact layer 2, hole selective contact layer 3. The electron selective contact layer 2 selectively transports electrons. The hole selective contact layer 3 selectively transports holes. The silicon carbide absorption layer 1 contains a silicon carbide material having an intermediate band, and the proportion of the silicon carbide material having an intermediate band in the silicon carbide absorption layer 1 is not particularly limited. For example, all the silicon carbide absorption layers 1 may be silicon carbide materials with intermediate strips. The silicon carbide material with the intermediate zone can absorb more light due to the existence of the intermediate zone, so the silicon carbide material with the intermediate zone can mainly play a role in light absorption.
The conductive doping in the silicon carbide absorption layer 1 adopts III group elements (p type doping) or V group elements (n type doping), and common conductive doping elements comprise boron, aluminum, gallium, indium, nitrogen, phosphorus, arsenic and the like. The doping concentration of the conductive doping in the silicon carbide absorption layer 1 is 1 × 1013cm-3-1×1020cm-3Magnitude.
The light facing surface of the silicon carbide absorption layer 1 is a plane or a suede. The light-facing surface of the silicon carbide absorption layer 1 may further have a nano light trapping structure, a plasmon structure, or the like to increase the light trapping effect.
The silicon carbide absorption layer 1 has a single conductivity doping type, e.g., the conductivity doping of the silicon carbide absorption layer 1 is one of n-type or p-type. In this case, the silicon carbide absorption layer 1 may form a carrier separation interface with the electron selective contact layer 2 or the hole selective contact layer 3. Alternatively, the silicon carbide absorption layer 1 has a pn junction, and the pn junction of the silicon carbide absorption layer 1 separates carriers. In the embodiments of the present application, this is not particularly limited.
If one of the electron selective contact layer 2 and the hole selective contact layer 3 is located on the light-facing surface of the silicon carbide absorption layer 1, it is necessary to have a high average transmittance in the visible light band to ensure the incident light of the device. The doping types, doping concentrations, etc. of the electron selective contact layer 2 and the hole selective contact layer 3 need to be matched with the types of carriers to be transported. For example, if the silicon carbide absorption layer 1 is composed of a first n-type silicon carbide absorption sublayer and a second p-type silicon carbide absorption sublayer distributed in the direction in which the electron selective contact layer 2 and the silicon carbide absorption layer 1 are arranged. Then the first silicon carbide absorbing sublayer of n-type is close to the electron selective contact layer 2. A second silicon carbide absorbing sublayer of p-type is adjacent to the hole-selective contact layer 3.
In the embodiment of the application, the silicon carbide battery can be divided into a homojunction battery and a heterojunction battery according to the photon-generated carrier separation technology of the silicon carbide battery. Homojunction cells refer to cells in which p-type silicon carbide and n-type silicon carbide layers are in direct contact to form a pn junction, and include single-crystal or polycrystalline silicon carbide in contact with the same crystal phase, and single-crystal or polycrystalline silicon carbide in contact with different crystal phases, such as cubic n-type silicon carbide and cubic p-type silicon carbide, or cubic n-type silicon carbide and hexagonal p-type silicon carbide. The remaining types may be classified as heterojunction devices in the present application, including silicon carbide-non-silicon carbide material contacts, silicon carbide-amorphous silicon carbide contacts, and structures in which pn junctions are deep inside silicon carbide absorption layers due to interface level differences may also be classified as heterojunction cells in the present application. The embodiment of the application is suitable for homojunction batteries and heterojunction batteries.
A first interface layer 21 is provided between the electron selective contact layer 2 and the silicon carbide absorption layer 1. On the silicon carbide absorption layer 1, a projection of the first interface layer 21 and a projection of the electron selective contact layer 2 have an overlapping region. The size of the overlapping region of the projection of the first interface layer 21 and the projection of the electron selective contact layer 2 is not particularly limited. For example, as shown in fig. 1, the projection of the first interface layer 21 and the projection of the electron selective contact layer 2 completely overlap each other.
And/or a second interface layer 31 is arranged between the hole selective contact layer 3 and the silicon carbide absorption layer 1, and a projection of the second interface layer 31 and a projection of the hole selective contact layer 3 have an overlapping region on the silicon carbide absorption layer 1. The size of the overlapping region of the projection of the second interface layer 31 and the projection of the hole-selective contact layer 3 is not particularly limited. For example, as shown in fig. 1, the projection of the second interface layer 31 and the projection of the hole-selective contact layer 3 completely overlap each other.
It is not particularly limited whether or not the projection of the first interface layer 21 and the projection of the second interface layer 31 overlap each other on the silicon carbide absorption layer 1. On the silicon carbide absorption layer 1, whether or not the projection of the first interface layer 21 and the projection of the hole selective contact layer 3 overlap is not particularly limited. Whether or not the projection of the second interface layer 31 and the projection of the electron selective contact layer 2 overlap on the silicon carbide absorption layer 1 is not particularly limited. The relative sizes of the projected area of the first interface layer 21 and the projected area of the second interface layer 31 on the silicon carbide absorption layer 1 are also not particularly limited. The relative sizes of the projected area of the electron selective contact layer 2 and the projected area of the hole selective contact layer 3 on the silicon carbide absorption layer 1 are also not particularly limited.
The silicon carbide cell may have only the first interface layer 21, or may have only the second interface layer 31, or may have both the first interface layer 21 and the second interface layer 31. The embodiment of the present application is not particularly limited to this.
The materials of the first interface layer 21 and the second interface layer 31 are each at least one selected from the group consisting of alkali metals, alkaline earth metals, halides of alkali metals, and halides of alkaline earth metals. The first interface layer and/or the second interface layer of the material can fully passivate the defects of the contact area of the metal and the silicon carbide material, reduce the potential barrier of the contact interface, further reduce the series resistance, and further improve the photoelectric conversion efficiency of the silicon carbide battery.
Alternatively, referring to fig. 1, the first interface layer 21 has a thickness of h1, the second interface layer 31 has a thickness of h2, and each of h1 and h2 is 0.1-2 nm. h1 is the dimension of the first interface layer 21 in the direction in which the electron selective contact layer 2 and the first interface layer 21 are provided. h2 is the dimension of the second interface layer 31 in the direction in which the hole selective contact layer 3 and the second interface layer 31 are provided. The first interface layer 21 made of the materials and with the thickness can fully passivate the defects of the contact area of the metal electrode on the electron side and the silicon carbide material, reduce the barrier of the contact interface, and further reduce the series resistance, and the first interface layer 21 can also adjust the work function between the silicon carbide absorption layer 1 and the electron selective contact layer 2, so that electrons can be effectively led out, and further the photoelectric conversion efficiency of the silicon carbide battery can be improved. And/or the second interface layer 31 made of the above materials and with the thickness can fully passivate the defects of the contact region between the metal electrode at the cavity side and the silicon carbide material, reduce the contact interface potential barrier, and further reduce the series resistance, and the second interface layer 31 can also adjust the work function between the silicon carbide absorption layer 1 and the cavity selective contact layer 3, so that the cavity can be effectively led out, and further the photoelectric conversion efficiency of the silicon carbide battery can be improved.
Alternatively, the first interface layer 21 may be a continuous or discontinuous film, and a thickness of 0.1 to 2nm may not ensure complete continuity, and a discontinuous structure such as pores may exist, but a macroscopically uniform distribution of the material in the first interface layer 21 is required. Alternatively, the first interface layer 21 forms a macroscopically uniform layer. It is mainly reflected in that the material in the first interface layer 21 may be relatively aggregated in microstructure, such as forming island-like structures, etc., but needs to be uniformly distributed in macro structure. Similarly, the second interface layer 31 may be a continuous or discontinuous film, and a thickness of 0.1-2nm may not ensure complete continuity, and a discontinuous structure such as pores may exist, but a macroscopically uniform distribution of the material in the second interface layer 31 is required. Alternatively, the second interfacial layer 31 forms a macroscopically uniform layer. It is mainly reflected in that the material in the second interface layer 31 may be relatively aggregated in microstructure, such as forming island-like structures, etc., but needs to be uniformly distributed in macro structure.
Optionally, the materials of the first interface layer 21 and the second interface layer 31 are selected from at least one of calcium, cesium, cadmium, potassium, lithium, magnesium, sodium, niobium, barium, magnesium fluoride, lithium fluoride, and calcium fluoride, and the above materials have a good interface passivation effect.
Optionally, the material of the electron selective contact layer 2 may be selected from n-type semiconductor materials with work functions less than or equal to 4.1eV, in which case the energy levels of the electron selective contact layer 2 and the silicon carbide absorption layer 1 are relatively matched, which is favorable for effective conduction of electrons. For example, the material of the electron selective contact layer 2 is selected from an n-type oxide semiconductor having a work function of 4.1eV or less, an n-type nitride semiconductor having a work function of 4.1eV or less, and an n-type sulfide semiconductor having a work function of 4.1eV or less.
Optionally, the thickness of the electron selective contact layer 2 is 5-500nm, and the electron selective contact layer 2 with the thickness facilitates the derivation of electrons. The thickness of the electron selective contact layer 2 is a dimension in a direction in which the electron selective contact layer 2 and the first interface layer 21 are provided.
Optionally, the material of the electron selective contact layer 2 may be at least one selected from titanium nitride, zinc oxide, tin oxide, and titanium oxide, and the energy levels of the electron selective contact layer 2 and the silicon carbide absorption layer 1 of the above materials are relatively matched, which is favorable for effective conduction of electrons. The zinc oxide herein may also be aluminum doped zinc oxide. The tin oxide can be fluorine-doped tin oxide, indium-gallium-doped tin oxide, or the like.
Optionally, the material of the hole-selective contact layer 3 is selected from p-type semiconductor materials with work function greater than or equal to 4.1 eV; alternatively, the material of the hole-selective contact layer 3 is selected from n-type semiconductor materials having a work function greater than 4.8 eV. The energy levels of the hole selective contact layer 3 and the silicon carbide absorption layer 1 of the material are matched, and effective derivation of holes is facilitated. For example, the material of the hole-selective contact layer 3 is selected from a p-type oxide semiconductor having a work function of 4.1eV or more, a p-type nitride semiconductor having a work function of 4.1eV or more, and a p-type sulfide semiconductor having a work function of 4.1eV or more. Alternatively, the material of the hole-selective contact layer 3 is selected from an n-type oxide semiconductor having a work function of more than 4.8eV, an n-type nitride semiconductor having a work function of more than 4.8eV, and an n-type sulfide semiconductor having a work function of more than 4.8 eV.
Optionally, the thickness of the hole selective contact layer 3 is 5-500nm, and the hole selective contact layer 3 with the thickness facilitates the leading-out of holes. The thickness of the hole selective contact layer 3 is a dimension in a direction in which the hole selective contact layer 3 and the second interface layer 31 are provided.
Optionally, the material of the hole-selective contact layer 3 is selected from at least one of nickel oxide, molybdenum oxide, vanadium oxide, and tungsten oxide, and the hole-selective contact layer 3 of the above materials facilitates effective hole extraction.
The light facing surface of the silicon carbide absorption layer 2 is the surface of the silicon carbide cell, which receives light, of the silicon carbide absorption layer 2. The backlight surface of the silicon carbide absorption layer 2 is opposite to the light-facing surface. Optionally, referring to fig. 1, the first interface layer 21 and the second interface layer 31 are respectively located on the light facing surface and the backlight surface of the silicon carbide absorption layer 2, the electron selective contact layer 2 is located on the light facing surface of the first interface layer 21, and the hole selective contact layer 3 is located on the backlight surface of the second interface layer 31, so as to form a double-sided battery. Alternatively, the second interface layer 31 and the first interface layer 21 are respectively positioned on the light facing surface and the backlight surface of the silicon carbide absorption layer 2, the hole selective contact layer 3 is positioned on the light facing surface of the second interface layer 31, and the electron selective contact layer 2 is positioned on the backlight surface of the first interface layer 21, so that the double-sided battery is formed.
Alternatively, referring to fig. 2, fig. 2 shows a schematic structural view of a second silicon carbide cell in an embodiment of the present invention. The first interface layer 21 and the second interface layer 31 are respectively positioned in a first area and a second area of a backlight surface of the silicon carbide absorption layer 1, the electron selective contact layer 2 is positioned in the backlight surface of the first interface layer 21, and the hole selective contact layer 3 is positioned in the backlight surface of the second interface layer 31, so that the IBC battery is formed. In the silicon carbide cell, the light-facing surface of the silicon carbide absorption layer 1 is not shielded by an electrode, so that more light rays can be absorbed. The relative sizes of the first region and the second region are not particularly limited. The relative sizes of the electron selective contact layer 2 and the hole selective contact layer 3 are also not particularly limited.
Alternatively, referring to fig. 3, fig. 3 shows a schematic structural view of a third silicon carbide cell in an embodiment of the present invention. In the case where the first interface layer 21 and the second interface layer 31 are located on the light-facing surface and the backlight surface of the silicon carbide absorption layer 1: on the silicon carbide absorption layer 1, the projection of the first interface layer 21 is smaller than that of the silicon carbide absorption layer 2; and/or, on the silicon carbide absorption layer 1, the projection of the electron selective contact layer 2 is smaller than that of the silicon carbide absorption layer 1; and/or, on the silicon carbide absorption layer 1, the projection of the second interface layer 31 is smaller than the projection of the silicon carbide absorption layer 1; and/or, on the silicon carbide absorption layer 1, the projection of the hole selective contact layer 3 is smaller than the projection of the silicon carbide absorption layer 1. That is, when the silicon carbide cell is a bifacial cell, at least one of the first interface layer 21, the electron selective contact layer 2, the second interface layer 31, and the hole selective contact layer 3 may be a local contact, and the form of the silicon carbide cell is varied.
In the silicon carbide cell shown in fig. 3, the first interface layer 21, the electron selective contact layer 2, the second interface layer 31, and the hole selective contact layer 3 are all in partial contact.
Alternatively, as shown in fig. 3, the first interface layer 21 and the second interface layer 31 are respectively located on the light-facing surface and the backlight surface of the silicon carbide absorption layer 1. A positive electrode 5 is formed on the hole-selective contact layer 3, and a negative electrode 4 is formed on the electron-selective contact layer 2. The first interface layer 21 and the second interface layer 31 are formed in partial regions on the silicon carbide absorption layer 1, that is, both the first interface layer 21 and the second interface layer 31 are in partial contact with the silicon carbide absorption layer 1. The positive electrode 5 is formed in a partial region of the silicon carbide absorption layer 1 corresponding to the second interface layer 31. The negative electrode 4 is formed in a partial region of the silicon carbide absorption layer 1 corresponding to the first interface layer 21. In general, the interface of the metal-silicon carbide material contact of the positive electrode 5 has more interface defects, the interface of the metal-silicon carbide material contact of the negative electrode 4 also has more interface defects, and the fermi level mismatch of the metal and the silicon carbide causes higher potential barrier of the contact interface, thereby introducing higher contact resistance. In the application, the materials of the second interface layer 31 between the positive electrode 5 and the silicon carbide absorption layer 1 and the materials of the first interface layer 21 between the negative electrode 4 and the silicon carbide absorption layer 1 are all alkali metals, alkaline earth metals and halides thereof, and the alkali metals, the alkaline earth metals and the halides thereof have lower work functions and can adjust the height of an interface barrier; meanwhile, the alkali metal and the alkaline earth metal have higher migration capacity at the interface, partial interface defects can be passivated in the form of ionic bonds, and the contact resistance is reduced, so that the overall efficiency of the device is improved.
Alternatively, as shown in fig. 2, the first interface layer 21 and the second interface layer 31 are respectively located in the first region and the second region of the backlight surface of the silicon carbide absorption layer 1. A positive electrode 5 is formed on the hole-selective contact layer 3, and a negative electrode 4 is formed on the electron-selective contact layer 2. The positive electrode 5 is formed in the silicon carbide absorption layer 1 in the second region corresponding to the second interface layer 31. The negative electrode 4 is formed in a first region of the silicon carbide absorption layer 1 corresponding to the first interface layer 21. In general, the interface of the metal-silicon carbide material contact of the positive electrode 5 has more interface defects, the interface of the metal-silicon carbide material contact of the negative electrode 4 also has more interface defects, and the fermi level mismatch of the metal and the silicon carbide causes higher potential barrier of the contact interface, thereby introducing higher contact resistance. In the application, the materials of the second interface layer 31 between the positive electrode 5 and the silicon carbide absorption layer 1 and the materials of the first interface layer 21 between the negative electrode 4 and the silicon carbide absorption layer 1 are all alkali metals, alkaline earth metals and halides thereof, and the alkali metals, the alkaline earth metals and the halides thereof have lower work functions and can adjust the height of an interface barrier; meanwhile, the alkali metal and the alkaline earth metal have higher migration capacity at the interface, partial interface defects can be passivated in the form of ionic bonds, and the contact resistance is reduced, so that the overall efficiency of the device is improved.
Alternatively, referring to fig. 2, in the case that the first interface layer 21 and the second interface layer 31 are respectively located in the first region and the second region of the backlight surface of the silicon carbide absorption layer 1, a gap or an electrical isolation structure is provided between the first interface layer 21 and the second interface layer 31 to avoid leakage current.
Alternatively, in the case where the first interface layer 21 and the second interface layer 31 are respectively located in the first region and the second region of the backlight surface of the silicon carbide absorption layer 1, the materials of the first interface layer 21 and the second interface layer 31 are both selected from at least one of halides of alkali metals and halides of alkaline earth metals, and the first interface layer 21 and the second interface layer 31 may be combined into one layer. Specifically, in this case, the first interface layer 21 and the second interface layer 31 can be combined into one layer, and there is almost no leakage.
Optionally, referring to fig. 1 to 3, the light-facing surface of the silicon carbide absorption layer is provided with an upper functional layer 6; and/or the backlight surface of the silicon carbide absorption layer 1 is provided with a lower functional layer 7. The upper functional layer 6 and the lower functional layer 7 are both at least one of a passivation layer and an antireflection layer, and the upper functional layer 6 and the lower functional layer 7 are both of one-layer or multi-layer structures and play roles in surface passivation and surface reflection reduction.
The silicon carbide cell also comprises a negative electrode 4 which is electrically contacted with the electron selective contact layer 2, and the negative electrode 4 is used for leading out electrons and transmitting electric energy to the outside. The material and structure of the negative electrode 4 are not particularly limited. The silicon carbide cell also comprises a positive electrode 5 which is electrically contacted with the hole selective contact layer 3, and the positive electrode 5 is used for leading out holes and transmitting electric energy to the outside. The material and structure of the positive electrode 5 are also not particularly limited.
Embodiments of the invention also provide a photovoltaic module comprising any of the foregoing silicon carbide cells. The photovoltaic module can also comprise an encapsulation adhesive film, a cover plate or a back plate and the like which are positioned on the light facing surface and the backlight surface of the silicon carbide battery. The silicon carbide cell in the photovoltaic module can refer to the related descriptions in the foregoing silicon carbide cell embodiments, and can achieve the same or similar beneficial effects, and the details are not repeated here to avoid repetition.
The present application is further explained below by way of a few specific examples.
Example 1
Referring to fig. 1, in the present embodiment, the silicon carbide absorption layer 1 includes a silicon carbide material having an intermediate zone. The silicon carbide absorption layer 1 is mainly doped with n-type conductivity with the doping concentration of 1 × 1016cm-3-1×1018cm-3In order of magnitude, the back surface of the silicon carbide absorption layer 1 is provided with a p-type conductivity doping layer to form a pn junction.
The light-facing surface of the silicon carbide absorption layer 1 can be flat (without limitation, polished or polished) or provided with a light trapping texture structure surface. A first interface layer 21 is arranged on the light facing surface of the silicon carbide absorption layer 1, a second interface layer 31 is arranged on the backlight surface of the silicon carbide absorption layer 1, barium is adopted in the two, a vacuum evaporation process is adopted, and the thickness is 0.5 nm.
An electron selective contact layer 2, which is a titanium oxide layer, is provided on the first interface layer 21. A hole-selective contact layer 3, which is a nickel oxide layer, is provided on the second interface layer structure 31. The annealing process after magnetron sputtering is adopted, and the thicknesses of the electron selective contact layer 2 and the hole selective contact layer 3 are both 200 nm.
An upper functional layer 6 is arranged on a light facing surface, a lower functional layer 7 is arranged on a backlight surface, and the upper functional layer 6 and the lower functional layer 7 are both multilayer silicon nitride films. The thickness of the upper functional layer 6 is 60 nm; the lower functional layer 7 has a thickness of 90 nm.
The electrodes are arranged by adopting a sintering method after screen printing, the negative electrode 4 adopts a silver material, and the positive electrode 5 adopts an aluminum-nickel alloy.
Example 2
Referring to fig. 3, unlike example 1, the first interface layer 21 and the second interface layer 31 are provided on a partial surface of the silicon carbide absorption layer 1, the electron selective contact layer 2 is provided only at a position corresponding to the negative electrode 4, and the hole selective contact layer 3 is provided only at a position corresponding to the positive electrode 5. In embodiment 2, the first interface layer 21 and the second interface layer 31 may be provided on partial surfaces of the silicon carbide absorption layer 1, the electron selective contact layer 2 may cover the entire light-facing surface of the silicon carbide absorption layer 1, and the hole selective contact layer 3 may cover the entire backlight surface of the silicon carbide absorption layer 1. The rest of embodiment 2 can refer to the description of embodiment 1, and can achieve the same or similar beneficial effects, and the description is omitted here to avoid repetition.
Example 3
Referring to fig. 2, the silicon carbide absorption layer 1 includes a silicon carbide material having an intermediate band. The silicon carbide absorption layer 1 is doped with n-type conductivity only, and the doping concentration is 1 multiplied by 1016cm-3-1×1018cm-3Magnitude. The silicon carbide absorption layer 1 is provided with a light trapping texture structure. The backlight surface of the silicon carbide absorption layer 1 is of a plane structure.
A first interface layer (21) is provided in a partial region of the backlight surface of a silicon carbide absorption layer (1), and a second interface layer (31) is provided in the remaining position. The first interface layer 21 and the second interface layer 31 are made of alkali metal, and the two layers need to be electrically isolated by adopting a gap, and the gap can be filled with the lower functional layer 7 subsequently to further enhance the isolation effect.
When the first interface layer 21 and the second interface layer 31 use halides of alkali metals or halides of alkaline earth metals, the first interface layer 21 and the second interface layer 31 may be combined into one layer without providing electrical isolation. The thickness of the layer is 0.5-1 nm.
An electron selective contact layer 2 is provided on the first interface layer 21, and the electron selective contact layer 2 is titanium nitride. A hole-selective contact layer 3 is provided on the second interface layer 31, and the hole-selective contact layer 3 is nickel oxide. The electron selective contact layer 2 and the hole selective contact layer 3 must have an electrically isolating gap, and the lower functional layer 7 may be filled later to further enhance the isolating effect.
An upper functional layer 6 is arranged on the light-facing surface of the silicon carbide absorption layer 1, and the upper functional layer 6 is a laminated layer of silicon oxide and silicon nitride and mainly plays a role in surface passivation and antireflection.
The lower functional layer 7 is arranged on the backlight surface of the silicon carbide absorption layer 1, and the lower functional layer 7 is made of silicon nitride materials and mainly plays roles in back reflection reduction and isolation protection.
A negative electrode 4 is disposed on the electron selective contact layer 2, and a positive electrode 5 is disposed on the hole selective contact layer 3.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (11)
1. A silicon carbide cell, comprising: an electron selective contact layer, a hole selective contact layer, a silicon carbide absorption layer; the electron selective contact layer selectively transports electrons; the hole selective contact layer selectively transports holes; the silicon carbide absorption layer comprises a silicon carbide material with an intermediate band;
a first interface layer is arranged between the electron selective contact layer and the silicon carbide absorption layer; and/or a second interface layer is arranged between the hole selective contact layer and the silicon carbide absorption layer;
the materials of the first interface layer and the second interface layer are selected from at least one of alkali metals, alkaline earth metals, halides of alkali metals and halides of alkaline earth metals.
2. The silicon carbide cell of claim 1, wherein the first interface layer and the second interface layer each have a thickness of 0.1-2 nm;
the first interface layer and the second interface layer are both continuous or discontinuous films.
3. The silicon carbide cell of claim 1, wherein the first interface layer and the second interface layer are each made from a material selected from at least one of calcium, cesium, cadmium, potassium, lithium, magnesium, sodium, niobium, barium, magnesium fluoride, lithium fluoride, and calcium fluoride.
4. The silicon carbide cell of claim 1, wherein the electron selective contact layer is of a material selected from n-type semiconductor materials having a work function of less than or equal to 4.1 eV;
the thickness of the electron selective contact layer is 5-500 nm.
5. The silicon carbide cell of claim 1, wherein the hole-selective contact layer is of a material selected from p-type semiconductor materials having a work function greater than or equal to 4.1 eV; or, the material of the hole selective contact layer is selected from n-type semiconductor materials with work function larger than 4.8 eV;
the thickness of the hole selective contact layer is 5-500 nm.
6. The silicon carbide cell of claim 4, wherein the electron selective contact layer is made of a material selected from at least one of titanium nitride, zinc oxide, tin oxide, and titanium oxide.
7. The silicon carbide cell of claim 5, wherein the hole-selective contact layer is a material selected from at least one of nickel oxide, molybdenum oxide, vanadium oxide, and tungsten oxide.
8. The silicon carbide cell of any of claims 1-7, wherein the first interface layer and the second interface layer are located on a light facing side and a light back side, respectively, of the silicon carbide absorber layer;
positive and negative electrodes are respectively formed on the hole selective contact layer and the electron selective contact layer;
the first interface layer and the second interface layer are formed in partial regions on the silicon carbide absorption layer, and the positive and negative electrodes are formed in the partial regions, respectively.
9. The silicon carbide cell of any of claims 1-7, wherein the first and second interface layers are located in first and second regions, respectively, of a backlight surface of the silicon carbide absorber layer;
positive and negative electrodes are respectively formed on the hole selective contact layer and the electron selective contact layer;
of the positive and negative electrodes, a negative electrode is formed in the first region, and a positive electrode is formed in the second region.
10. The silicon carbide cell of claim 9, wherein the first interface layer, the second interface layer have a gap or electrical isolation structure therebetween.
11. The silicon carbide cell of claim 9, wherein the first and second interface layers are each selected from at least one of halides of alkali metals and halides of alkaline earth metals, and the first and second interface layers are combined into one layer.
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