CN112466868B - Chip packaging structure and vehicle - Google Patents
Chip packaging structure and vehicle Download PDFInfo
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- CN112466868B CN112466868B CN202011352592.5A CN202011352592A CN112466868B CN 112466868 B CN112466868 B CN 112466868B CN 202011352592 A CN202011352592 A CN 202011352592A CN 112466868 B CN112466868 B CN 112466868B
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- electric conduction
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 230000017525 heat dissipation Effects 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 69
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of chips, in particular to a chip packaging structure and a vehicle, wherein the chip packaging structure comprises a first electric conduction and heat conduction piece, a second electric conduction and heat conduction piece and a first electric conduction and heat conduction elastic piece, the chip is positioned between the first electric conduction and heat conduction piece and the second electric conduction and heat conduction piece, and the first electric conduction and heat conduction elastic piece is positioned between the first electric conduction and heat conduction piece and the chip; according to the invention, the power device or the module is elastically contacted by double-sided pressure, so that on one hand, the packaging structure can form double-sided heat dissipation, and further, the working condition temperature rise of the power chip and the derivative device and module thereof is reduced; on the other hand, the connection mode in the bonding process is avoided, parasitic inductance in the device or the module is reduced, and the performance of the chip is improved, so that the overall performance is improved.
Description
Technical Field
The invention relates to the technical field of chips, in particular to a chip packaging structure and a vehicle.
Background
The power chip and the derived devices and modules thereof are used in a large amount in the parts of the new energy automobile, mainly control the electric energy, play an important role in motor driving, battery charging, direct current control and the like, for example, the power chip used in the new energy automobile is required to have higher switching working frequency (generally, the maximum frequency is more than 40 Khz), so the power chip is required to have higher switching frequency and lower switching loss.
The power devices or power modules used by the new energy automobile at present are all welded type packages, and particularly the power modules used in the aspect of motor driving have larger working condition output power.
Due to the limitation of the packaging form, the power device or the power module is only subjected to single-sided heat dissipation, so that the temperature rise of the device or the module under the working condition is relatively large, and in addition, the front surface of the power chip is subjected to bonding connection by the traditional welding process, so that parasitic inductance inside the device or the module can be increased, and dynamic loss is increased.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the chip packaging structure and the vehicle can form double-sided heat dissipation by adopting double-sided pressure elastic contact, further reduce working condition temperature rise, avoid a connection mode in a bonding process and reduce parasitic inductance in a device or a module.
In order to solve the technical problems, the invention adopts the following technical scheme:
The chip packaging structure comprises a first electric conduction heat conduction piece, a second electric conduction heat conduction piece and a first electric conduction heat conduction elastic piece, wherein the chip is positioned between the first electric conduction heat conduction piece and the second electric conduction heat conduction piece, and the first electric conduction heat conduction elastic piece is positioned between the first electric conduction heat conduction piece and the chip.
In order to solve the technical problems, the invention adopts another technical scheme that:
A vehicle comprises the chip packaging structure.
The invention has the beneficial effects that: the power device or the module is elastically contacted by double-sided pressure, and the packaging structure can form double-sided heat dissipation on one hand, so that the working condition temperature rise of the power chip and the derivative device and module thereof is further reduced; on the other hand, the connection mode in the bonding process is avoided, parasitic inductance in the device or the module is reduced, and the performance of the chip is improved, so that the overall performance is improved.
Drawings
Fig. 1 is a schematic diagram of a chip package structure according to a first embodiment of the invention;
Description of the reference numerals: 001. a first electrically and thermally conductive member; 002. a second electrically and thermally conductive member; 003. a third electrically and thermally conductive member; 004. a fourth electrically and thermally conductive member; 005. a fifth electrically and thermally conductive member; 011. a switch chip, 012, a diode chip; 013. a chip back metal system of the switch chip; 014. a chip front metal system of the switch chip; 015. a gate metal system; 016. a chip back metal system of the diode chip; 017. a chip front side metal system of the diode chip; 021. a second electrically and thermally conductive elastic member; 022. a first electrically and thermally conductive elastic member; 023. a third electrically and thermally conductive elastic member; 041. and an insulating frame.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
Referring to fig. 1, a chip package structure includes a first conductive and thermally conductive member 001, a second conductive and thermally conductive member 002, and a first conductive and thermally conductive elastic member 022, wherein the chip is located between the first conductive and thermally conductive member 001 and the second conductive and thermally conductive member 002, and the first conductive and thermally conductive elastic member 022 is located between the first conductive and thermally conductive member 001 and the chip.
Further, the semiconductor package further comprises an insulating frame 041, wherein the insulating frame 041 is arranged on one surface of the first electric and heat conducting piece 001 facing the chip;
the chip is disposed on an insulating frame 041.
Further, the heat-conducting and heat-conducting device further comprises a second electric-conducting heat-conducting elastic piece 021 and a third electric-conducting heat-conducting piece 003, wherein the second electric-conducting heat-conducting elastic piece 021 is arranged between the second electric-conducting heat-conducting piece 002 and the third electric-conducting heat-conducting piece 003, and the second electric-conducting heat-conducting piece 002 is connected with the third electric-conducting heat-conducting piece 003 through the second electric-conducting heat-conducting elastic piece 021.
As can be seen from the above description, the second electrically and thermally conductive member 002 is connected to the third electrically and thermally conductive member 003 via the second electrically and thermally conductive elastic member 021, so that the chip has enough thermal expansion space during operation, and extrusion damage caused by no thermal expansion space is avoided.
Further, the chips have a plurality of chips, and each chip is independently corresponding to the first electric and heat conductive elastic member 022, the second electric and heat conductive elastic member 021 and the second electric and heat conductive member 002;
the plurality of chips share the first conductive member 001 and the third conductive member 003.
Further, the second electrically and thermally conductive elastic member 021 is welded to the second electrically and thermally conductive member 002 and the third electrically and thermally conductive member 003, respectively.
Further, the chip includes a gate metal system 015, the chip package structure further includes a gate heat dissipation portion, the gate heat dissipation portion includes a fourth electrically and thermally conductive member 004, a fifth electrically and thermally conductive member 005, and a third electrically and thermally conductive elastic member 023, the fifth electrically and thermally conductive member 005 is connected to the gate metal system 015, and the fourth electrically and thermally conductive member 004 is connected to the fifth electrically and thermally conductive member through the third electrically and thermally conductive elastic member 023.
As can be seen from the above description, the heat dissipation of the gate can be facilitated by the provision of the gate heat dissipation portion; through the third electric conduction heat conduction elastic piece 023, when heat conduction, the chip can have enough thermal expansion space when the work, avoid not having thermal expansion space and lead to the extrusion damage of fifth electric conduction heat conduction piece 005 or other components.
Further, the fifth conductive member 005 is a probe-shaped member.
Further, the fifth conductive member 005 is made of a rigid material.
Further, the chip comprises a chip body, a chip front metal system and a chip back metal system, wherein the chip front metal system is positioned on the upper surface of the chip body, and the chip back metal system is positioned on the lower surface of the chip body;
the front metal system of the chip is in contact with the second electrically and thermally conductive member 002, and the back metal system of the chip is in contact with the first electrically and thermally conductive elastic member 022.
A vehicle comprising the chip package structure of any one of the above.
Example 1
The chip packaging structure comprises a first electric conduction heat conduction member 001, a second electric conduction heat conduction member 002 and a first electric conduction heat conduction elastic member 022, wherein the chip is positioned between the first electric conduction heat conduction member 001 and the second electric conduction heat conduction member 002, and the first electric conduction heat conduction elastic member 022 is positioned between the first electric conduction heat conduction member 001 and the chip.
The chip packaging structure further comprises an insulating frame 041, wherein the insulating frame 041 is arranged on one surface of the first electric conduction and heat conduction piece 001 facing the chip;
the chip is disposed on an insulating frame 041.
The chip package structure further comprises a second electric conduction and heat conduction elastic piece 021 and a third electric conduction and heat conduction piece 003, wherein the second electric conduction and heat conduction elastic piece 021 is arranged between the second electric conduction and heat conduction piece 002 and the third electric conduction and heat conduction piece 003, and the second electric conduction and heat conduction piece 002 is connected with the third electric conduction and heat conduction piece 003 through the second electric conduction and heat conduction elastic piece 021.
The chips are provided with a plurality of chips, and each chip is independently corresponding to the first electric conduction heat conduction elastic piece 022, the second electric conduction heat conduction elastic piece 021 and the second electric conduction heat conduction piece 002;
the plurality of chips share the first conductive member 001 and the third conductive member 003.
The second conductive elastic member 021 is welded with the second conductive elastic member 002 and the third conductive elastic member 003 respectively.
The chip comprises a grid metal system 015 (a front grid pressure contact metal component of the chip), the chip packaging structure further comprises a grid radiating part, the grid radiating part comprises a fourth electric conduction heat conduction member 004, a fifth electric conduction heat conduction member 005 and a third electric conduction heat conduction elastic member 023, the fifth electric conduction heat conduction member 005 is connected to the grid metal system 015, and the fourth electric conduction heat conduction member 004 is connected with the fifth electric conduction heat conduction member through the third electric conduction heat conduction elastic member 023.
The fifth conductive member 005 is a probe-shaped member.
The fifth conductive member 005 is made of a rigid material.
The chip comprises a chip body, a chip front metal system and a chip back metal system, wherein the chip front metal system is positioned on the upper surface of the chip body, and the chip back metal system is positioned on the lower surface of the chip body;
the front metal system of the chip is in contact with the second electrically and thermally conductive member 002, and the back metal system of the chip is in contact with the first electrically and thermally conductive elastic member 022.
Wherein the method comprises the steps of
The number of the chips is two, namely a switch chip 011 and a diode chip 012;
The type of the switch chip 011 is not limited to IGBT or MOSFET, and the chip material is not limited to silicon or silicon carbide; the chip back metal system 013 of the switch chip is, but not limited to, an IGBT collector or a MOSFET drain; the die front side metal system 014 of the switch die is but not limited to an IGBT collector or MOSFET drain.
The diode chip 012 is made of silicon or silicon carbide, and the diode chip 012 includes a chip front side metal system 017 of the diode chip and a chip back side metal system 016 of the diode chip.
The first conductive member 001 (chip back pressure contact metal member) needs to have high electrical and thermal conductivity, and this member is in direct contact with the outside, needs to have high hardness, and is resistant to corrosion and oxidation.
The second conductive member 002 (the front surface of the chip is in pressure contact with the metal member) needs to have high electrical conductivity, thermal conductivity and hardness, and the surface needs to have required adhesion of solder because it needs to be connected with the second conductive elastic member 021 later.
The third conductive member 003 (chip front side pressure contact metal member) needs to have high electrical and thermal conductivity, and this member is in direct contact with the outside, and needs to have high hardness, and is corrosion-resistant and oxidation-resistant.
The gate metal system 015 (chip front side gate pressure contact metal component) requires higher electrical and thermal conductivity, direct contact with the outside, higher hardness, and corrosion and oxidation resistance.
The fifth conductive member 005 (a die front side gate pressure contact metal member) needs to have a high conductivity, and this member presents a probe body, and the lower portion is directly in contact with the die gate lead pad (gate metal system 015 or die front side gate pressure contact metal member), and needs to have a high hardness.
The first conductive elastic member 022 (the back surface of the chip is in pressure contact with the elastic metal member) needs to have high electrical conductivity, thermal conductivity and softness, and also needs to have high ductility.
The second conductive elastic member 021 (front pressure contact elastic metal member) has a surface requiring a required adhesion of solder because it is required to be welded with the second conductive member 002 and the third conductive member 003 later, which requires a higher electrical conductivity, thermal conductivity and softness, and the shape of the member is not limited to a disc spring.
The third conductive spring 023 (die front side pressure contact gate spring metal component) requires higher electrical conductivity and is shaped as but not limited to a spring.
The insulating frame 041 (chip non-metal fixing frame) is made of an organic material, and needs a certain insulating strength and hardness.
Example two
The chip packaging structure comprises a first electric conduction heat conduction member 001, a second electric conduction heat conduction member 002 and a first electric conduction heat conduction elastic member 022, wherein the chip is positioned between the first electric conduction heat conduction member 001 and the second electric conduction heat conduction member 002, and the first electric conduction heat conduction elastic member 022 is positioned between the first electric conduction heat conduction member 001 and the chip.
The chip packaging structure further comprises an insulating frame 041, wherein the insulating frame 041 is arranged on one surface of the first electric conduction and heat conduction piece 001 facing the chip;
the chip is disposed on an insulating frame 041.
The chip package structure further comprises a second electric conduction and heat conduction elastic piece 021 and a third electric conduction and heat conduction piece 003, wherein the second electric conduction and heat conduction elastic piece 021 is arranged between the second electric conduction and heat conduction piece 002 and the third electric conduction and heat conduction piece 003, and the second electric conduction and heat conduction piece 002 is connected with the third electric conduction and heat conduction piece 003 through the second electric conduction and heat conduction elastic piece 021.
The second conductive elastic member 021 is welded with the second conductive elastic member 002 and the third conductive elastic member 003 respectively.
The chip comprises a grid metal system 015 (a front grid pressure contact metal component of the chip), the chip packaging structure further comprises a grid radiating part, the grid radiating part comprises a fourth electric conduction heat conduction member 004, a fifth electric conduction heat conduction member 005 and a third electric conduction heat conduction elastic member 023, the fifth electric conduction heat conduction member 005 is connected to the grid metal system 015, and the fourth electric conduction heat conduction member 004 is connected with the fifth electric conduction heat conduction member through the third electric conduction heat conduction elastic member 023.
The fifth conductive member 005 is a probe-shaped member.
The fifth conductive member 005 is made of a rigid material.
The chip comprises a chip body, a chip front metal system and a chip back metal system, wherein the chip front metal system is positioned on the upper surface of the chip body, and the chip back metal system is positioned on the lower surface of the chip body;
the front metal system of the chip is in contact with the second electrically and thermally conductive member 002, and the back metal system of the chip is in contact with the first electrically and thermally conductive elastic member 022.
Wherein the method comprises the steps of
The chip is a switch chip 011;
The type of the switch chip 011 is not limited to IGBT or MOSFET, and the chip material is not limited to silicon or silicon carbide; the chip back metal system 013 of the switch chip is, but not limited to, an IGBT collector or a MOSFET drain; the die front side metal system 014 of the switch die is but not limited to an IGBT collector or MOSFET drain.
The first conductive member 001 (chip back pressure contact metal member) needs to have high electrical and thermal conductivity, and this member is in direct contact with the outside, needs to have high hardness, and is resistant to corrosion and oxidation.
The second conductive member 002 (the front surface of the chip is in pressure contact with the metal member) needs to have high electrical conductivity, thermal conductivity and hardness, and the surface needs to have required adhesion of solder because it needs to be connected with the second conductive elastic member 021 later.
The third conductive member 003 (chip front side pressure contact metal member) needs to have high electrical and thermal conductivity, and this member is in direct contact with the outside, and needs to have high hardness, and is corrosion-resistant and oxidation-resistant.
The gate metal system 015 (chip front side gate pressure contact metal component) requires higher electrical and thermal conductivity, direct contact with the outside, higher hardness, and corrosion and oxidation resistance.
The fifth conductive member 005 (a die front side gate pressure contact metal member) needs to have a high conductivity, and this member presents a probe body, and the lower portion is directly in contact with the die gate lead pad (gate metal system 015 or die front side gate pressure contact metal member), and needs to have a high hardness.
The first conductive elastic member 022 (the back surface of the chip is in pressure contact with the elastic metal member) needs to have high electrical conductivity, thermal conductivity and softness, and also needs to have high ductility.
The second conductive elastic member 021 (front pressure contact elastic metal member) has a surface requiring a required adhesion of solder because it is required to be welded with the second conductive member 002 and the third conductive member 003 later, which requires a higher electrical conductivity, thermal conductivity and softness, and the shape of the member is not limited to a disc spring.
The third conductive spring 023 (die front side pressure contact gate spring metal component) requires higher electrical conductivity and is shaped as but not limited to a spring.
The insulating frame 041 (chip non-metal fixing frame) is made of an organic material, and needs a certain insulating strength and hardness.
Example III
A chip package structure, which is the same as the second embodiment and will not be described in detail, is a diode chip 012;
Wherein the method comprises the steps of
The diode chip 012 is made of silicon or silicon carbide, and the diode chip 012 includes a chip front side metal system 017 of the diode chip and a chip back side metal system 016 of the diode chip.
Example IV
A vehicle comprising the chip packaging structure of one or more of the first to third embodiments.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent changes made by the specification and drawings of the present invention, or direct or indirect application in the relevant art, are included in the scope of the present invention.
Claims (9)
1. The chip packaging structure is characterized by comprising a first electric conduction and heat conduction piece, a second electric conduction and heat conduction piece and a first electric conduction and heat conduction elastic piece, wherein the chip is positioned between the first electric conduction and heat conduction piece and the second electric conduction and heat conduction piece, and the first electric conduction and heat conduction elastic piece is positioned between the first electric conduction and heat conduction piece and the chip;
The electric conduction and heat conduction device comprises a first electric conduction and heat conduction elastic piece, a second electric conduction and heat conduction elastic piece and a third electric conduction and heat conduction piece, wherein the first electric conduction and heat conduction elastic piece is arranged between the first electric conduction and heat conduction piece and the third electric conduction and heat conduction piece, and the first electric conduction and heat conduction piece is connected with the third electric conduction and heat conduction piece through the first electric conduction and heat conduction elastic piece.
2. The chip package structure according to claim 1, further comprising an insulating frame provided on a side of the first electrically and thermally conductive member facing the chip;
The chip is arranged on the insulating frame.
3. The chip package structure of claim 1, wherein the plurality of chips each independently corresponds to a first electrically and thermally conductive elastic member, a second electrically and thermally conductive elastic member, and a second electrically and thermally conductive member;
the chips share the first electric and heat conducting piece and the third electric and heat conducting piece.
4. The chip package structure according to claim 1, wherein the second electrically and thermally conductive elastic member is welded to the second electrically and thermally conductive member and the third electrically and thermally conductive member, respectively.
5. The chip package structure according to claim 1, wherein the chip includes a gate metal system, the chip package structure further includes a gate heat dissipation portion including a fourth electrically and thermally conductive member, a fifth electrically and thermally conductive member, and a third electrically and thermally conductive elastic member, the fifth electrically and thermally conductive member being connected to the gate metal system, the fourth electrically and thermally conductive member being connected to the fifth electrically and thermally conductive member through the third electrically and thermally conductive elastic member.
6. The chip package structure of claim 5, wherein the fifth conductive element is a probe-shaped element.
7. The chip package structure of claim 5, wherein the fifth conductive member is made of a rigid material.
8. The chip package structure of claim 1, wherein the chip comprises a chip body, a chip front side metal system and a chip back side metal system, the chip front side metal system being located on an upper surface of the chip body, the chip back side metal system being located on a lower surface of the chip body;
the metal system on the front side of the chip is contacted with the second electric conduction and heat conduction piece, and the metal system on the back side of the chip is contacted with the first electric conduction and heat conduction elastic piece.
9. A vehicle comprising the chip package structure of any one of claims 1-8.
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| CN202011352592.5A CN112466868B (en) | 2020-11-27 | 2020-11-27 | Chip packaging structure and vehicle |
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| CN202011352592.5A CN112466868B (en) | 2020-11-27 | 2020-11-27 | Chip packaging structure and vehicle |
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| WO2019012738A1 (en) * | 2017-07-11 | 2019-01-17 | 株式会社日立製作所 | Semiconductor module and method for manufacturing semiconductor module |
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| JP2926537B2 (en) * | 1994-12-15 | 1999-07-28 | 株式会社日立製作所 | Multi-chip module cooling system |
| JP6559536B2 (en) * | 2015-10-22 | 2019-08-14 | 日本発條株式会社 | Power semiconductor device |
| CN108520870B (en) * | 2018-04-16 | 2020-05-15 | 全球能源互联网研究院有限公司 | Power device packaging structure |
| CN107768328B (en) * | 2017-10-31 | 2019-08-27 | 华北电力大学 | A kind of power device for realizing two-side radiation and pressure equilibrium |
| CN108172617B (en) * | 2017-12-23 | 2020-04-17 | 湖南大学 | Circular large-size IGBT chip crimping packaging structure and manufacturing method |
| CN111584443A (en) * | 2020-05-26 | 2020-08-25 | 忱芯科技(上海)有限公司 | Double-sided heat dissipation power module and control method of double-sided parallelism thereof |
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| WO2019012738A1 (en) * | 2017-07-11 | 2019-01-17 | 株式会社日立製作所 | Semiconductor module and method for manufacturing semiconductor module |
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