CN112466813A - 一种Micro LED器件及其转移方法 - Google Patents
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Abstract
本发明还提供一种Micro LED器件及其转移方法,Micro LED器件包括玻璃基板、位于玻璃基板上的胶缓冲层、位于胶缓冲层上的第二金属凸起、粘附层以及LED阵列,其中第二金属凸起呈凹凸状,粘附层位于第二金属凸起的凸状上,LED阵列包括位于第二金属凸起的凹状内的第一金属凸起和位于第一金属凸起上的外延层。本发明LED阵列的LED金属层放置在第二金属凸起的凹状内上且未直接与胶缓冲层接触,这样LED阵列转移时不会有胶残留;另一方面LED阵列底部没有设置胶,这样转移LED阵列时,拾取力需求小,提高了转移效率,避免了LED电性接触不良。
Description
技术领域
本发明涉及一种Micro LED的技术领域,尤其涉及一种Micro LED显示器件及其转移方法。
背景技术
Micro LED为无机发光材料具有发光效率高、寿命长、可靠性高的优点而被广泛关注,为了制作全彩的显示器需要把R、G、B三种颜色的micro LED从各自的生长基板上进行拾取,然后放置在驱动背板上,将LED从生长基板分离一般采用激光剥离装置,将LED临时固定于暂态基板上,等待转移
将LED与生长基板分离时一般采用UV胶或者热解胶等胶水作为临时固定材料,并且胶水能为LED分离时产生的应力提供缓冲作用,避免LED碎裂,但胶水会残存于LED表面影响电性接触,并且胶水解粘后仍存在部分粘力,阻碍LED拾取,降低拾取效率。
发明内容
本发明的目的在于提供一种拾取力需求小和提高转移效率的Micro LED显示器件及其转移方法。
本发明提供一种Micro LED转移方法,包括如下步骤:
S1:首先在衬底基板上沉积外延层;然后在外延层上沉积第一金属层;
S2:对第一金属层进行刻蚀并形成多个第一凹槽和位于相邻第一凹槽之间的第一金属凸起;
S3:在玻璃基板上沉积胶缓冲层;
S4:在胶缓冲层上沉积第二金属层;
S5:在第二金属层上沉积粘附层;
S6:首先对粘附层进行刻蚀形成图案化的粘附层;然后对第二金属层进行刻蚀形成位于粘附层下方的第二金属凸起和位于第二金属凸起之间第二凹槽;
S7:具有第二金属凸起的玻璃基板放置在具有第一金属凸起的衬底基板上,使得第二金属凸起放置在衬底基板的第一凹槽内并进行对应压合;
S8:剥离衬底基板将玻璃基板朝下放置;
S9:第一金属凸起和外延层刻蚀并分别形成位于第二凹槽内的LED金属层和位于LED金属层上的LED外延层,LED金属层和LED外延层组成LED阵列;
S10:转移头从胶缓冲层上转移LED阵列。
进一步地,步骤S1的衬底基板为蓝宝石衬底。
进一步地,步骤S3的胶缓冲层为UV胶或者热解胶。
进一步地,步骤S2中,第一金属层刻蚀深度为H1,第一金属层刻蚀宽度为W1,第一金属凸起的宽度为W2;步骤S6中,两次刻蚀总深度为H2,两次刻蚀宽度为W3,第二金属凸起的宽度为W4;其中H2≥H1,W3≥W2,W4≤W1。
本发明还提供一种Micro LED器件,其包括玻璃基板,还包括位于玻璃基板上的胶缓冲层、位于胶缓冲层上的第二金属凸起、粘附层以及LED阵列,其中第二金属凸起呈凹凸状,粘附层位于第二金属凸起的凸状上,LED阵列包括位于第二金属凸起的凹状内的第一金属凸起和位于第一金属凸起上的外延层。
进一步地,胶缓冲层为UV胶或者热解胶。
本发明LED阵列的LED金属层放置在第二金属凸起的凹状内上且未直接与胶缓冲层接触,这样LED阵列转移时不会有胶残留;另一方面LED阵列底部没有设置胶,这样转移LED阵列时,拾取力需求小,提高了转移效率,避免了LED电性接触不良。
附图说明
图1和图2为本发明Micro LED转移方法的制作步骤之一的示意图;
图3为本发明Micro LED转移方法的制作步骤之二的示意图;
图4为本发明Micro LED转移方法的制作步骤之三的示意图;
图5为本发明Micro LED转移方法的制作步骤之四的示意图;
图6为本发明Micro LED转移方法的制作步骤之五的示意图;
图7为本发明Micro LED转移方法的制作步骤之六的示意图;
图8为本发明Micro LED转移方法的制作步骤之七的示意图;
图9为本发明Micro LED转移方法的制作步骤之八的示意图;
图10为本发明Micro LED转移方法的制作步骤之九的示意图;
图11为本发明Micro LED转移方法的制作步骤之十的示意图。
具体实施方式
下面结合附图和具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
为使图面简洁,各图中只示意性地表示出了与本发明相关的部分,它们并不代表其作为产品的实际结构。另外,以使图面简洁便于理解,在有些图中具有相同结构或功能的部件,仅示意性地绘示了其中的一个,或仅标出了其中的一个。在本文中,“一个”不仅表示“仅此一个”,也可以表示“多于一个”的情形。
本发明一种Micro LED转移方法,包括如下步骤:
S1:如图1所示,首先在衬底基板10上沉积外延层11;如图2所示,然后在外延层11上沉积第一金属层12,其中衬底基板10为蓝宝石衬底;
S2:如图3所示,对第一金属层12进行刻蚀并形成多个第一凹槽121和位于相邻第一凹槽121之间的第一金属凸起122,其中第一金属层12刻蚀深度为H1,第一金属层12刻蚀宽度为W1,第一金属凸起122的宽度为W2;
S3:如图4所示,在玻璃基板20上沉积胶缓冲层21,胶缓冲层21为UV胶或者热解胶;
S4:如图5所示,在胶缓冲层21上沉积第二金属层22;
S5:如图6所示,在第二金属层22上沉积粘附层23;
S6:如图7所示,首先对粘附层23进行刻蚀形成图案化的粘附层231;然后对第二金属层22进行刻蚀形成位于粘附层231下方的第二金属凸起222和位于第二金属凸起222之间第二凹槽223,其中两次刻蚀总深度为H2,H2≥H1,两次刻蚀宽度为W3,W3≥W2,第二金属凸起222的宽度为W4,W4≤W1;
S7:如图8所示,具有第二金属凸起222的玻璃基板20放置在具有第一金属凸起122的衬底基板10上,使得第二金属凸起222放置在衬底基板10的第一凹槽121内并进行对应压合,由于H2≥H1,W3≥W2,W4≤W1,使得第二金属凸起222可以放置在第一凹槽121内,第一金属凸起122放置在第二凹槽223内;
S8:如图9所示,剥离衬底基板10并将玻璃基板20朝下放置;
S9:如图10所示,第一金属凸起122和外延层11刻蚀并分别形成位于第二凹槽223内的LED金属层101和位于LED金属层101上的LED外延层102,LED金属层101和LED外延层102组成LED阵列100;
S10:如图11所示,转移头200从第二金属凸起222上转移LED阵列100。
通过上述方法形成LED阵列并转移LED阵列。
本发明还提供一种Micro LED器件,其包括玻璃基板20、位于玻璃基板20上的胶缓冲层21、位于胶缓冲层21上的第二金属凸起222、粘附层231以及LED阵列100,其中第二金属凸起222呈凹凸状,粘附层231位于第二金属凸起222的凸状上,LED阵列100包括位于第二金属凸起222的凹状内的LED金属层101和位于LED金属层101上的LED外延层102。
本发明LED阵列的LED金属层放置在第二金属凸起的凹状内上且未直接与胶缓冲层接触,这样LED阵列转移时不会有胶残留;另一方面LED阵列底部没有设置胶,这样转移LED阵列时,拾取力需求小,提高了转移效率,避免了LED电性接触不良。
以上详细描述了本发明的优选实施方式,但是本发明并不限于上述实施方式中的具体细节,在本发明的技术构思范围内,可以对本发明的技术方案进行多种等同变换(如数量、形状、位置等),这些等同变换均属于本发明的保护范围。
Claims (6)
1.一种Micro LED转移方法,其特征在于,包括如下步骤:
S1:首先在衬底基板上沉积外延层;然后在外延层上沉积第一金属层;
S2:对第一金属层进行刻蚀并形成多个第一凹槽和位于相邻第一凹槽之间的第一金属凸起;
S3:在玻璃基板上沉积胶缓冲层;
S4:在胶缓冲层上沉积第二金属层;
S5:在第二金属层上沉积粘附层;
S6:首先对粘附层进行刻蚀形成图案化的粘附层;然后对第二金属层进行刻蚀形成位于粘附层下方的第二金属凸起和位于第二金属凸起之间第二凹槽;
S7:具有第二金属凸起的玻璃基板放置在具有第一金属凸起的衬底基板上,使得第二金属凸起放置在衬底基板的第一凹槽内并进行对应压合;
S8:剥离衬底基板将玻璃基板朝下放置;
S9:第一金属凸起和外延层刻蚀并分别形成位于第二凹槽内的LED金属层和位于LED金属层上的LED外延层,LED金属层和LED外延层组成LED阵列;
S10:转移头从胶缓冲层上转移LED阵列。
2.根据权利要求1所述的Micro LED转移方法,其特征在于,步骤S1的衬底基板为蓝宝石衬底。
3.根据权利要求1所述的Micro LED转移方法,其特征在于,步骤S3的胶缓冲层为UV胶或者热解胶。
4.根据权利要求1所述的Micro LED转移方法,其特征在于,步骤S2中,第一金属层刻蚀深度为H1,第一金属层刻蚀宽度为W1,第一金属凸起的宽度为W2;步骤S6中,两次刻蚀总深度为H2,两次刻蚀宽度为W3,第二金属凸起的宽度为W4;其中H2≥H1,W3≥W2,W4≤W1。
5.一种Micro LED器件,其包括玻璃基板,其特征在于,还包括位于玻璃基板上的胶缓冲层、位于胶缓冲层上的第二金属凸起、粘附层以及LED阵列,其中第二金属凸起呈凹凸状,粘附层位于第二金属凸起的凸状上,LED阵列包括位于第二金属凸起的凹状内的第一金属凸起和位于第一金属凸起上的外延层。
6.根据权利要求1所述的LED器件,其特征在于:胶缓冲层为UV胶或者热解胶。
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