CN112447549A - Wafer coating manufacturing process - Google Patents

Wafer coating manufacturing process Download PDF

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Publication number
CN112447549A
CN112447549A CN201910831370.2A CN201910831370A CN112447549A CN 112447549 A CN112447549 A CN 112447549A CN 201910831370 A CN201910831370 A CN 201910831370A CN 112447549 A CN112447549 A CN 112447549A
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CN
China
Prior art keywords
wafer
temperature
coating
heating plate
target
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Pending
Application number
CN201910831370.2A
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Chinese (zh)
Inventor
陈有证
谈文毅
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United Semi Integrated Circuit Manufacture Xiamen Co ltd
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United Semi Integrated Circuit Manufacture Xiamen Co ltd
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Priority to CN201910831370.2A priority Critical patent/CN112447549A/en
Publication of CN112447549A publication Critical patent/CN112447549A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention discloses a wafer coating manufacturing process. First, a wafer is placed on the supporting column, and a distance is formed between the wafer and a heating plate located below the wafer, so that the wafer can be coated at a first temperature. Then, judging the difference between the manufacturing process temperature of a target wafer and the first temperature so as to change the coating temperature of the wafer, wherein when the manufacturing process temperature of the target wafer is higher than the first temperature, the heating plate is directly heated to the manufacturing process temperature of the target wafer; when the target wafer manufacturing process temperature is lower than the first temperature but higher than a minimum coating temperature, only increasing the distance between the wafer and the heating plate, wherein the minimum coating temperature is the temperature when the heating plate is not cooled and the wafer and the heating plate have a maximum distance therebetween; when the target wafer fabrication process temperature is less than the minimum coating temperature, the spacing between the wafer and the heating plate is increased and the heating plate is cooled.

Description

Wafer coating manufacturing process
Technical Field
The present invention relates to a wafer coating process, and more particularly, to a wafer coating process for increasing the distance between a wafer and a heating plate.
Background
In the conventional coater/developer for wafer production, a platform capable of performing a thermal bake at a predetermined temperature on a wafer product is required in some manufacturing processes, and the platform is generally called a hot plate. However, different wafer products require different temperatures for the thermal bake, for example, when the temperature of the thermal bake required for the original wafer product is 110 degrees celsius, the hot plate is heated to 110 degrees celsius, but when the temperature of the thermal bake required for the next wafer product is 90 degrees celsius, the hot plate must be cooled. In the cooling mode of the existing hot plate, natural cooling is adopted, namely, long-time consumption (waiting) is utilized to replace the reduction of the temperature of the hot plate, and the wafer product can not be continuously produced until the temperature of the hot plate is reduced to the temperature required by hot baking of the next wafer product. However, the above-mentioned natural cooling method has a long cooling time, so that the production efficiency is almost zero during the period of waiting for cooling, and the production efficiency of the wafer product is not good.
In addition, when the hot plate is cooled, the wafer product may be directly placed on the hot plate to wait, and therefore, the wafer product may be over-baked (OverBake) due to the over-long time of thermal baking, so that the over-baked wafer product must be scrapped, and the yield of the wafer product cannot be improved.
Disclosure of Invention
The invention provides a wafer coating manufacturing process, which reduces the wafer coating temperature by increasing the distance between a wafer and a heating plate, so that the cooling time can be reduced, and the production efficiency and the yield are increased.
The invention provides a wafer coating manufacturing process, which comprises the following steps. First, a wafer is placed on the supporting column, and a distance is formed between the wafer and a heating plate located below the wafer, so that the wafer can be coated at a first temperature. Then, judging the difference between the manufacturing process temperature of a target wafer and the first temperature so as to change the coating temperature of the wafer, wherein when the manufacturing process temperature of the target wafer is higher than the first temperature, the heating plate is directly heated to the manufacturing process temperature of the target wafer; when the target wafer manufacturing process temperature is lower than the first temperature but higher than a minimum coating temperature, only increasing the distance between the wafer and the heating plate, wherein the minimum coating temperature is the temperature when the heating plate is not cooled and the wafer and the heating plate have a maximum distance therebetween; when the target wafer fabrication process temperature is less than the minimum coating temperature, the spacing between the wafer and the heating plate is increased and the heating plate is cooled.
Based on the above, the invention provides a wafer coating process, which places a wafer on a supporting pillar, and a distance is formed between the wafer and a heating plate located below the wafer, so that the wafer can be coated at a first temperature; and determining a difference between a target wafer fabrication process temperature and the first temperature to change a coating temperature of the wafer, wherein when the target wafer fabrication process temperature is greater than the first temperature, the heating plate is directly heated to the target wafer fabrication process temperature; when the target wafer manufacturing process temperature is lower than the first temperature but higher than a minimum coating temperature, only increasing the distance between the wafer and the heating plate, wherein the minimum coating temperature is the temperature when the heating plate is not cooled and the wafer and the heating plate have a maximum distance therebetween; when the target wafer fabrication process temperature is less than the minimum coating temperature, the spacing between the wafer and the heating plate is increased and the heating plate is cooled. Therefore, the invention can reduce the temperature by increasing the distance between the wafer and the heating plate, and completely or partially replace the function of cooling the heating plate, thereby reducing the cooling time and increasing the production efficiency and the yield.
Drawings
FIG. 1 is a flow chart of a wafer coating process according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a wafer coating apparatus according to an embodiment of the invention;
FIG. 3 is a graph of coating temperature versus spacing between a wafer and a heating disk in accordance with one embodiment of the present invention;
FIG. 4 is a graph of coating temperature versus spacing between a wafer and a heating plate in accordance with one embodiment of the present invention.
Description of the main elements
10: wafer with a plurality of chips
100: wafer coating device
110: cavity body
112: heating plate
112 a: thimble
114: support column
120: nozzle with a nozzle body
g: distance between each other
g 0: minimum pitch
g 1: maximum distance
C1, C2, C3: interval(s)
S1, S2, S21, S22, S23, S3: step (ii) of
T, T2: temperature of
T0: first temperature
T1: minimum coating temperature
Detailed Description
Fig. 1 is a flow chart of a wafer coating process according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of a wafer coating apparatus according to an embodiment of the invention. Please refer to fig. 1 and fig. 2. A wafer coating apparatus 100 may include a chamber 110 with a heating plate 112 and support posts 114 positioned in the chamber 110. The support posts 114 are used to support wafers, and the heating plate 112 is used to heat the wafers. A nozzle 120 may spray a coating agent, such as Hexamethyldisilazane (HMDS), on the wafer or introduce process gases into the chamber 110. In the present embodiment, the wafer coating process is a hexamethyl-disilazane (HMDS) wafer coating process, but the invention is not limited thereto.
Step S1-of fig. 1, a wafer is placed on the support pillar with a gap between the wafer and a heating plate under the wafer to enable the wafer to be coated at a first temperature. As shown in fig. 2, a wafer 10 is placed on the support posts 114. When the supporting column 114 is not lifted, the wafer 10 is directly placed on the two pins 112 a. The number of the supporting posts 114 is preferably three to stably support the wafer 10, but may be other numbers. Wafer 10 does not directly contact heating plate 112. The wafer 10 and the heating plate 112 under the wafer 10 have a gap g therebetween, and the heating plate 112 has a predetermined temperature, so that the wafer 10 can be coated at a first temperature. At this time, when the support post 114 is not raised and the wafer 10 directly contacts the ejector pin 112a, there is a minimum spacing g0 between the wafer 10 and the heater plate 112. Preferably, the minimum spacing g0 between wafer 10 and heating plate 112 is 0.1 nm.
This first temperature may be approximately equal to or slightly less than the predetermined temperature of heating disk 112. In this embodiment, the difference between the first temperature and the predetermined temperature of heating disk 112 is ignored. The first temperature at this time may be an initial temperature at which the wafer 10 is placed on the support posts 114, or a final temperature at which the wafer 10 is subjected to a previous fabrication process. At this stage, the wafer 10 may be selectively coated at a first temperature.
Step S2 of fig. 1, determining a difference between a target wafer fabrication process temperature and the first temperature to change a coating temperature of the wafer, wherein when the target wafer fabrication process temperature is greater than the first temperature, the heating plate is directly heated to the target wafer fabrication process temperature (step S21); when the target wafer fabrication process temperature is less than the first temperature but greater than a minimum coating temperature, only increasing the spacing between the wafer and the heating plate, wherein the minimum coating temperature is a temperature at which the heating plate is not cooled and a maximum spacing is provided between the wafer and the heating plate (step S22); when the target wafer fabrication process temperature is less than the minimum coating temperature, the spacing between the wafer and the heating plate is increased and the heating plate is cooled (step S23). FIG. 3 is a graph showing the coating temperature versus the spacing between the wafer and the heating plate according to one embodiment of the present invention. FIG. 4 is a graph showing the coating temperature versus the spacing between the wafer and the heating plate according to one embodiment of the present invention. Please refer to fig. 1-4.
And then, changing the coating temperature of the wafer to perform the coating manufacturing process in the same wafer or perform the coating manufacturing process in different wafers. In the present invention, to change the coating temperature of the wafer, the difference between the target wafer manufacturing process temperature and the first temperature is determined to change the coating temperature of the wafer. The target wafer manufacturing process temperature is the coating temperature to be performed in the manufacturing process. Before the coating process is performed or before the difference between the target wafer process temperature and the first temperature is determined, the present embodiment may optionally proceed to step S3-check the target wafer process temperature and correct the temperature uniformity of the heating plate. In step S3, it is determined whether the temperature uniformity of heating plate 112 is within a predetermined range. When the temperature uniformity of the heating plate 112 is within the predetermined range, step S2 is performed to determine the difference between the target wafer manufacturing process temperature and the first temperature, so as to change a coating temperature of the wafer. When the temperature uniformity of the heating plate 112 does not conform to the predetermined range, the temperature uniformity of the heating plate 112 is corrected to conform to the predetermined range. Then, step S2 is performed to determine a difference between a target wafer fabrication process temperature and the first temperature, so as to change a coating temperature of the wafer.
Next, step S2 of fig. 1 of the present invention is performed to determine a difference between a target wafer fabrication process temperature and the first temperature, so as to change a coating temperature of the wafer. At this time, the following three cases occur.
Step S21, directly heating the heating plate to the target wafer manufacturing process temperature when the target wafer manufacturing process temperature is higher than the first temperature. When the target wafer fabrication process temperature (the coating temperature to be performed in the current fabrication process) is higher than the first temperature (the last coating temperature in the previous fabrication process of the wafer or the initial preset temperature of the wafer), the heating plate 112 is directly heated to the target wafer fabrication process temperature (or the heating plate 112 is heated to a temperature slightly higher than the target wafer fabrication process temperature so that the wafer coating temperature can reach the target wafer fabrication process temperature).
Alternatively, step S22-only increase the spacing between the wafer and the heating plate when the target wafer fabrication process temperature is less than the first temperature but greater than a minimum coating temperature, wherein the minimum coating temperature is a temperature at which the heating plate is not cooled and there is a maximum spacing between the wafer and the heating plate. As shown in fig. 3, from the graph of the coating temperature versus the spacing between the wafer and the heating plate, it can be seen that the coating temperature T decreases as the spacing g between the wafer 10 and the heating plate 112 increases. In this embodiment, the spacing g between the wafer 10 and the heating disk 112 is increased only up to a maximum spacing g 1. Preferably, the maximum spacing g1 is the maximum safe spacing of a device to maintain the stability of the device mechanism during the coating process. In other embodiments, the maximum distance g1 may be the maximum distance g1 that may be increased during the fabrication process based on other considerations, such as the addition of a safety factor. The coating temperature T when wafer 10 has a maximum spacing g1 from heater tray 112 is the minimum coating temperature T1 when heater tray 112 is not directly cooled. Because of the long time required to directly cool heating disk 112, the present invention only increases the spacing g between wafer 10 and heating disk 112 without cooling heating disk 112 when the target wafer fabrication process temperature is less than first temperature T0 but greater than minimum coating temperature T1. Therefore, the invention can reduce the cooling time and increase the production efficiency and yield. In the present embodiment, the supporting pillars 114 are raised to increase the distance g between the wafer 10 and the heating plate 112, but the invention is not limited thereto.
Alternatively, step S23-increasing the spacing between the wafer and the heating plate and cooling the heating plate when the target wafer fabrication process temperature is less than the minimum coating temperature. As shown in fig. 4, as can be seen from the relationship between the coating temperature and the distance between the wafer and the heating plate, the interval C1 is when the target wafer manufacturing process temperature is higher than the first temperature T0, and is suitable for performing step S21: heating plate 112 is directly heated to the target wafer fabrication process temperature. The interval C2 is the case where the target wafer fabrication process temperature is less than the first temperature T0 but greater than the minimum coating temperature T1, and is suitable for performing the step S22: only the spacing g between wafer 10 and heating disk 112 is increased. The interval C3 is when the target wafer manufacturing process temperature is lower than the minimum coating temperature T1, and is suitable for performing the step S23: increasing the spacing g between wafer 10 and heating disk 112 and cooling heating disk 112.
When the target wafer fabrication process temperature is less than the minimum coating temperature T1, heating disk 112 needs to be cooled in addition to increasing the spacing g between wafer 10 and heating disk 112. In one embodiment, the difference between the target wafer processing temperature and the minimum coating temperature T1 is the temperature at which the heating plate 112 needs to be cooled (the difference between the first temperature T0 and the temperature T2), and the target wafer processing temperature can be reached by increasing the distance g between the wafer 10 and the heating plate 112 to the maximum distance g 1. Therefore, the present invention can reduce the temperature required to cool the heating plate 112 (only the difference between the first temperature T0 and the temperature T2), thereby reducing the cooling time and increasing the production efficiency and yield.
Thereafter, the wafer 10 is coated at the target wafer fabrication process temperature.
Repeating the loop of step S2 to determine the difference between a target wafer fabrication process temperature and the first temperature (the first temperature refers to the last temperature after the fabrication process) to change a coating temperature of the wafer; and a step of coating the wafer 10 at the target wafer fabrication process temperature. The steps of S2 and coating the wafer 10 at the target wafer fabrication process temperature may be repeated cyclically for the same wafer or different wafers.
In summary, the present invention provides a wafer coating process, which places a wafer on a supporting pillar, and a distance is formed between the wafer and a heating plate located under the wafer, so that the wafer can be coated at a first temperature; and determining a difference between a target wafer fabrication process temperature and the first temperature to change a coating temperature of the wafer, wherein when the target wafer fabrication process temperature is greater than the first temperature, the heating plate is directly heated to the target wafer fabrication process temperature; when the target wafer manufacturing process temperature is lower than the first temperature but higher than a minimum coating temperature, only increasing the distance between the wafer and the heating plate, wherein the minimum coating temperature is the temperature when the heating plate is not cooled and the wafer and the heating plate have a maximum distance therebetween; when the target wafer fabrication process temperature is less than the minimum coating temperature, the spacing between the wafer and the heating plate is increased and the heating plate is cooled. Therefore, the invention can reduce the temperature by increasing the distance between the wafer and the heating plate, and completely or partially replace the function of cooling the heating plate, thereby reducing the cooling time and increasing the production efficiency and the yield.
Thereafter, the wafer may be coated at the coating temperature of the wafer. The step of determining the difference between the target wafer manufacturing process temperature and the first temperature to change the coating temperature of the wafer and the step of coating the wafer with the target wafer manufacturing process temperature can be repeatedly and circularly performed. The maximum distance is preferably a maximum safe distance of a device.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in the claims of the present invention should be covered by the present invention.

Claims (11)

1. A wafer coating process, comprising:
placing a wafer on the supporting column, wherein a distance is reserved between the wafer and the heating plate positioned below the wafer, so that the wafer can be coated at a first temperature; and
judging the difference between the target wafer manufacturing process temperature and the first temperature so as to change the coating temperature of the wafer, wherein when the target wafer manufacturing process temperature is higher than the first temperature, the heating plate is directly heated to the target wafer manufacturing process temperature; when the target wafer fabrication process temperature is less than the first temperature but greater than a minimum coating temperature, only increasing the spacing between the wafer and the heating plate, wherein the minimum coating temperature is a temperature at which the heating plate is not cooled and a maximum spacing exists between the wafer and the heating plate; when the target wafer fabrication process temperature is less than the minimum coating temperature, the spacing between the wafer and the heating plate is increased and the heating plate is cooled.
2. The wafer coating process of claim 1, wherein the spacing between the wafer and the heating plate is increased by raising the support posts.
3. The wafer coating process of claim 1 wherein the wafer is placed on three of the support posts.
4. The wafer coating process of claim 1, further comprising, before changing the coating temperature of the wafer:
checking the temperature of the target wafer manufacturing process and correcting the temperature uniformity of the heating plate.
5. The wafer coating process as claimed in claim 1, wherein the wafer coating process is a hexamethyl-disilazane (HMDS) wafer coating process.
6. The wafer coating process of claim 1, wherein the minimum coating temperature is the coating temperature of the wafer without cooling the heating plate and with the maximum separation between the wafer and the heating plate.
7. The wafer coating process of claim 1, wherein the maximum pitch is a maximum safe pitch of a device.
8. The wafer coating fabrication process of claim 1, wherein the minimum spacing between the wafer and the heating disk is 0.1 nanometers.
9. The wafer coating process of claim 1, further comprising, before determining the difference between the target wafer process temperature and the first temperature to change the coating temperature of the wafer:
coating the wafer at the first temperature.
10. The wafer coating process of claim 1, further comprising, after determining the difference between the target wafer process temperature and the first temperature to change the coating temperature of the wafer:
coating the wafer at the target wafer fabrication process temperature.
11. The wafer coating process of claim 10, wherein determining the difference between the target wafer process temperature and the first temperature to change the coating temperature of the wafer and coating the wafer with the target wafer process temperature are repeated cyclically.
CN201910831370.2A 2019-09-04 2019-09-04 Wafer coating manufacturing process Pending CN112447549A (en)

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CN201910831370.2A CN112447549A (en) 2019-09-04 2019-09-04 Wafer coating manufacturing process

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Application Number Priority Date Filing Date Title
CN201910831370.2A CN112447549A (en) 2019-09-04 2019-09-04 Wafer coating manufacturing process

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031645A (en) * 2001-07-13 2003-01-31 Dainippon Screen Mfg Co Ltd Substrate cooler
JP2004022805A (en) * 2002-06-17 2004-01-22 Tokyo Electron Ltd Heat treatment device and heat treatment method
CN101144988A (en) * 2006-09-13 2008-03-19 沈阳芯源先进半导体技术有限公司 Temperature gradient controllable wafer front-drying method and its hot plate type front drying device
CN105336562A (en) * 2014-07-22 2016-02-17 中芯国际集成电路制造(北京)有限公司 Heat treatment cavity, heat treatment method and coating equipment
CN108630584A (en) * 2018-05-11 2018-10-09 上海华力集成电路制造有限公司 The heating device and method of coating developing machine

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031645A (en) * 2001-07-13 2003-01-31 Dainippon Screen Mfg Co Ltd Substrate cooler
JP2004022805A (en) * 2002-06-17 2004-01-22 Tokyo Electron Ltd Heat treatment device and heat treatment method
CN101144988A (en) * 2006-09-13 2008-03-19 沈阳芯源先进半导体技术有限公司 Temperature gradient controllable wafer front-drying method and its hot plate type front drying device
CN105336562A (en) * 2014-07-22 2016-02-17 中芯国际集成电路制造(北京)有限公司 Heat treatment cavity, heat treatment method and coating equipment
CN108630584A (en) * 2018-05-11 2018-10-09 上海华力集成电路制造有限公司 The heating device and method of coating developing machine

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