CN112435929A - Power module packaging method and power module - Google Patents
Power module packaging method and power module Download PDFInfo
- Publication number
- CN112435929A CN112435929A CN201910790886.7A CN201910790886A CN112435929A CN 112435929 A CN112435929 A CN 112435929A CN 201910790886 A CN201910790886 A CN 201910790886A CN 112435929 A CN112435929 A CN 112435929A
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- Prior art keywords
- bonding
- silver paste
- pad
- power module
- semiconductor chip
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- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052709 silver Inorganic materials 0.000 claims abstract description 36
- 239000004332 silver Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000003466 welding Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49531—Additional leads the additional leads being a wiring board
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49506—Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The application provides a packaging method of a power module and the power module, wherein the method comprises the following steps: fixedly mounting a semiconductor chip on the directly bonded copper substrate; arranging a bonding pad on the direct bonding copper substrate; and connecting the bonding pad and the semiconductor chip by using a silver paste line, and connecting the bonding pad and the IGBT tube by using a bonding wire. By the method, the possibility of damage of the bonding wire is reduced, the chip integration level is higher, and the chip comprises an upper bridge driver, a lower bridge driver, a protection circuit and other circuits.
Description
Technical Field
The present invention relates to the field of power module packaging, and more particularly, to a packaging method for a power module and a power module.
Background
An Intelligent Power Module (IPM) is an advanced Power switch device, and has the advantages of a high-Power transistor, such as high current density, low saturation voltage, and high voltage resistance, and the advantages of a MOSFET (field effect transistor), such as high input impedance, high switching frequency, and low driving Power. At present, the DCB technology is widely applied and can be used in the fields of power secondary integrated Printed Circuit Boards (PCBs), power control circuits, power semiconductor modules, intelligent power modules, fixed relays, high-frequency switching tubes, automotive electronics, military, aerospace and the like. The Direct Copper Bonding (DCB) technology has many advantages, and a Copper layer with a thickness of more than 0.3mm can enable a conductor with the same width to pass larger current, so that the volume and the area of the conductor are greatly reduced; because of its excellent thermal conductivity, it can conduct more power per unit volume; high-performance insulation characteristics (insulation voltage > 3600V); two-layer welding is reduced, the thermal cycle times (more than 50000 times) and the parameter consistency are improved, and the cost and the module quality are reduced.
In a semiconductor module, as shown in fig. 1, unpackaged semiconductor chips (including integrated circuits) are often mounted directly on a DCB substrate. Bonding wires made of gold or aluminum are used for bonding contact pads of the semiconductor chip to the DCB substrate. Due to the fact that the bond wires are prone to damage during production and operation of such modules, the bond wires limit the mass production and operation time of the modules.
Disclosure of Invention
In order to solve the problems, the application provides a power module and a packaging method thereof, and a silver paste line is partially used for replacing a gold wire bonding line, so that the risk of damage is reduced, and a driving chip can be more integrated.
In a first aspect, the present application provides a packaging method for a power module, the method including: fixedly mounting a semiconductor chip on the directly bonded copper substrate; arranging a bonding pad on the direct bonding copper substrate; and connecting the bonding pad and the semiconductor chip by using a silver paste line, and connecting the bonding pad and the IGBT tube by using a bonding wire.
In a preferred embodiment of the first aspect, providing a pad on the direct bond copper substrate includes: arranging a welding area on the direct bonding copper substrate by utilizing an etching process; and sintering the welding area on the ceramic by using a copper-clad substrate to form the welding pad.
In a preferred embodiment of the first aspect, connecting the pad and the semiconductor chip with a silver paste line includes: and printing the silver paste line between the bonding pad and the semiconductor chip through a printing process.
In a preferred embodiment of the first aspect, providing a pad on the directly bonded copper substrate, and connecting the pad and the semiconductor chip with a silver paste line, includes: arranging a welding area on the direct bonding copper substrate by utilizing an etching process; etching a groove circuit on the directly bonded copper substrate by using an etching process, wherein the groove circuit is connected with the welding area and the semiconductor chip; silver paste is injected into the groove line to form the silver paste line and the bonding pad, wherein the bonding pad is made of silver paste.
In a preferred embodiment of the first aspect, after forming the silver paste line, the method further comprises: drying the silver paste line; and sintering the silver paste line at 500-800 ℃.
In a preferred embodiment of the first aspect, the bonding wire is a gold wire or an aluminum wire.
In a preferred embodiment of the first aspect, the bond wire has a thickness of 15 mils.
In a second aspect, the present application provides a power module packaged by the method of the first aspect and the implementation manner thereof, wherein the power module includes a semiconductor chip, a direct bonding copper substrate, a pad, an IGBT tube and a frame, wherein the pad is disposed on the direct bonding copper substrate, the semiconductor chip is connected with the pad by a silver paste line, and the pad is connected with the IGBT tube by a bonding line.
In a preferred embodiment of the second aspect, the bond wire has a thickness of 15 mils.
In a preferred embodiment of the second aspect, the pad is made of copper or silver paste.
Compared with the prior art, the packaging method of the power module and the power module have the advantages that part of the gold wire bonding wire is replaced by the silver paste wire, so that the possibility of damage of the bonding wire is reduced, the chip integration level is higher, and the chip comprises other circuits such as an upper bridge driver, a lower bridge driver and a protection circuit; in addition, the 15mil gold wire bonding wire is used for replacing the 5mil bonding wire in the prior art, so that the bonding wire is not easy to damage.
The features mentioned above can be combined in various suitable ways or replaced by equivalent features as long as the object of the invention is achieved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
fig. 1 shows a schematic structure diagram of a power module in the prior art.
FIG. 2 is a schematic flow chart diagram of a method of packaging a power module according to an embodiment of the invention;
fig. 3 shows a schematic structural diagram of a power module according to an embodiment of the invention.
In the drawings, like parts are provided with like reference numerals. The drawings are not to scale.
Detailed Description
The invention will be further explained with reference to the drawings.
Fig. 1 is a package structure diagram of a power module in the prior art. The power module 10 includes an IGBT tube 1, a gold wire bonding wire 2, a semiconductor chip 3, a DCB substrate 4, and a frame 5. The semiconductor chip 3 and the IGBT tube 1 are directly bonded by the gold wire bonding wire 2, so that the bonding wire is easily damaged in the production process, and the mass production and the working time of the module are limited.
A schematic flow chart of the packaging method 100 of the power module provided by the present invention is shown in fig. 2, and accordingly, a schematic structural diagram of the power module 200 packaged by the method 100 is shown in fig. 3.
First, as shown in fig. 3, the power module 10 includes an IGBT tube 1 ', a bonding wire 2', a semiconductor chip 3 ', a DCB substrate 4', a frame 5 ', a pad 6', and a silver paste line 7 ', wherein the semiconductor chip 3' and the pad 6 'are connected by the silver paste line 7', and the pad 6 'and the IGBT tube 1' are connected by the bonding wire.
As shown in fig. 3, the method 100 includes:
s110, fixedly mounting a semiconductor chip 3 'on the DCB substrate 4';
s120, arranging a bonding pad 6' on the DCB substrate;
s130, connecting the bonding pad 6 ' with the semiconductor chip 3 ' by using a silver paste line, and connecting the bonding pad 6 ' with the IGBT tube 1 ' by using a bonding wire 2 '.
In S110, the DCB substrate 4 'is fixedly disposed directly on the semiconductor chip 3' by a soldering process, as known to those skilled in the art.
In S120, the pad 6 'may be provided on the DCB substrate 4' by the following process.
First, lands for forming the pads 6 'are provided on the DCB substrate 4' by an etching process. Specifically, copper on DCB is electrolyzed, a copper sheet to be etched is used as an anode, and a corrosion-resistant metal material is used as an auxiliary cathode. The anode is connected with the positive pole of the power supply, and the auxiliary cathode is connected with the negative pole of the power supply. When current passes through the electrode and the electrolyte solution, electrochemical reactions occur on the surface of the electrode and in the electrolyte solution, and the reaction removes part of the metal to be dissolved and removed, so as to achieve the purpose of metal corrosion, thereby forming a welding area.
Next, the pad is formed by sintering on the ceramic using a copper-clad substrate in the bonding area.
In S130, the pad 6 'and the semiconductor chip 3' are connected by a silver paste line 7 ', and the pad 6' and the IGBT tube 1 'are connected by a bonding wire 2'. Specifically, a silver paste line is printed between the pad 6 'and the contact pad of the semiconductor chip 3' through a printing process. Drying and sintering after printing, wherein a chain furnace is adopted for sintering, and the sintering temperature is 500-800 ℃. The silver paste lines maintain good contact with the copper material of the pads 6'. Meanwhile, a common bonding wire is adopted for connection between the bonding pad 6 'and the IGBT tube 1'; and preferably, the bonding wire is a gold wire or an aluminum wire; more preferably, the bond wire has a thickness of 15 mils, and the use of a bond wire having a greater thickness further ensures a reduced likelihood of damage.
In another embodiment of the present invention, S120 and S130 can be implemented by etching and etching the copper on the DCB substrate 4 'uniformly as described above, cutting a plurality of groove lines on the ceramic, injecting silver paste on the groove lines to respectively lead to the DBC substrate 4' to form the bonding pads 6 ', and then leading the bonding wires 2' to the corresponding bonding pads 6 'from the IGBT tube 1'. In this embodiment, the pads 6' are also made of silver paste lines.
According to the packaging method of the power module and the power module, the probability of damage of bonding wires is reduced by replacing part of gold wire bonding wires with silver paste wires, so that the integration level of a chip is higher, and the chip comprises other circuits such as an upper bridge driver, a lower bridge driver and a protection circuit; in addition, the 15mil gold wire bonding wire is used for replacing the 5mil bonding wire in the prior art, so that the bonding wire is not easy to damage.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (10)
1. A method of packaging a power module, the method comprising:
fixedly mounting a semiconductor chip on the directly bonded copper substrate;
arranging a bonding pad on the direct bonding copper substrate;
and connecting the bonding pad and the semiconductor chip by using a silver paste line, and connecting the bonding pad and the IGBT tube by using a bonding wire.
2. The method of claim 1, wherein providing a pad on the direct bond copper substrate comprises:
arranging a welding area on the direct bonding copper substrate by utilizing an etching process;
and sintering the welding area on the ceramic by using a copper-clad substrate to form the welding pad.
3. The method of claim 1, wherein connecting the pad and the semiconductor chip with a silver paste line comprises:
and printing the silver paste line between the bonding pad and the semiconductor chip through a printing process.
4. The method of claim 1, wherein providing a pad on the direct bond copper substrate, the pad and the semiconductor chip being connected with a silver paste line, comprises:
arranging a welding area on the direct bonding copper substrate by utilizing an etching process;
etching a groove circuit on the directly bonded copper substrate by using an etching process, wherein the groove circuit is connected with the welding area and the semiconductor chip;
silver paste is injected into the groove line to form the silver paste line and the bonding pad, wherein the bonding pad is made of silver paste.
5. The method of claim 3 or 4, wherein after forming the silver paste line, the method further comprises:
drying the silver paste line;
and sintering the silver paste line at 500-800 ℃.
6. The method of any one of claims 1 to 4, wherein the bonding wires are gold or aluminum wires.
7. The method of any of claims 1 to 4, wherein the bond wire has a thickness of 15 mils.
8. A power module packaged by the method of any one of claims 1 to 7, wherein the power module comprises a semiconductor chip, a direct-bonded copper substrate, a bonding pad, an IGBT tube and a frame, wherein the bonding pad is arranged on the direct-bonded copper substrate, the semiconductor chip is connected with the bonding pad by a silver paste line, and the bonding pad is connected with the IGBT tube by a bonding line.
9. The power module of claim 8, wherein the bond wire has a thickness of 15 mils.
10. The power module of claim 9, wherein the pad is made of copper or silver paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910790886.7A CN112435929A (en) | 2019-08-26 | 2019-08-26 | Power module packaging method and power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910790886.7A CN112435929A (en) | 2019-08-26 | 2019-08-26 | Power module packaging method and power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112435929A true CN112435929A (en) | 2021-03-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910790886.7A Pending CN112435929A (en) | 2019-08-26 | 2019-08-26 | Power module packaging method and power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112435929A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001036200A (en) * | 1999-07-22 | 2001-02-09 | Yamaichi Electronics Co Ltd | Printed wiring board, manufacture of the printed wiring board, and manufacture of small-sized plastic molded item |
| CN101330803A (en) * | 2007-06-18 | 2008-12-24 | 比亚迪股份有限公司 | Assistance processing method for printed circuit board |
| JP2010171275A (en) * | 2009-01-23 | 2010-08-05 | Hitachi Metals Ltd | Multilayer ceramic board, electronic parts using the same, and manufacturing method of the same |
| CN102724805A (en) * | 2012-06-19 | 2012-10-10 | 田宝祥 | Composite ceramic substrate with characteristics of high heat radiation and high heat conduction |
| CN204213862U (en) * | 2014-09-24 | 2015-03-18 | 惠州市英吉尔光电科技有限公司 | A kind of LED compact power supply |
| CN105280565A (en) * | 2015-11-18 | 2016-01-27 | 南京皓赛米电力科技有限公司 | A power module structure capable of improving welding quality |
| CN207217529U (en) * | 2017-08-15 | 2018-04-10 | 陈广明 | high temperature resistant L ED light source |
| CN208487570U (en) * | 2018-07-03 | 2019-02-12 | 深圳市久宝科技有限公司 | The novel copper-based core plate of new-energy automobile LED headlight |
| CN209105488U (en) * | 2018-08-20 | 2019-07-12 | 深圳可瑞高新材料股份有限公司 | A kind of conductive silver paste printing composite line substrate and LED illumination mould group |
-
2019
- 2019-08-26 CN CN201910790886.7A patent/CN112435929A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001036200A (en) * | 1999-07-22 | 2001-02-09 | Yamaichi Electronics Co Ltd | Printed wiring board, manufacture of the printed wiring board, and manufacture of small-sized plastic molded item |
| CN101330803A (en) * | 2007-06-18 | 2008-12-24 | 比亚迪股份有限公司 | Assistance processing method for printed circuit board |
| JP2010171275A (en) * | 2009-01-23 | 2010-08-05 | Hitachi Metals Ltd | Multilayer ceramic board, electronic parts using the same, and manufacturing method of the same |
| CN102724805A (en) * | 2012-06-19 | 2012-10-10 | 田宝祥 | Composite ceramic substrate with characteristics of high heat radiation and high heat conduction |
| CN204213862U (en) * | 2014-09-24 | 2015-03-18 | 惠州市英吉尔光电科技有限公司 | A kind of LED compact power supply |
| CN105280565A (en) * | 2015-11-18 | 2016-01-27 | 南京皓赛米电力科技有限公司 | A power module structure capable of improving welding quality |
| CN207217529U (en) * | 2017-08-15 | 2018-04-10 | 陈广明 | high temperature resistant L ED light source |
| CN208487570U (en) * | 2018-07-03 | 2019-02-12 | 深圳市久宝科技有限公司 | The novel copper-based core plate of new-energy automobile LED headlight |
| CN209105488U (en) * | 2018-08-20 | 2019-07-12 | 深圳可瑞高新材料股份有限公司 | A kind of conductive silver paste printing composite line substrate and LED illumination mould group |
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