CN112430805B - Vacuum control system of atomic layer deposition coating machine - Google Patents
Vacuum control system of atomic layer deposition coating machine Download PDFInfo
- Publication number
- CN112430805B CN112430805B CN202011320038.9A CN202011320038A CN112430805B CN 112430805 B CN112430805 B CN 112430805B CN 202011320038 A CN202011320038 A CN 202011320038A CN 112430805 B CN112430805 B CN 112430805B
- Authority
- CN
- China
- Prior art keywords
- vacuum
- pump
- coating
- molecular pump
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 124
- 239000011248 coating agent Substances 0.000 title claims abstract description 116
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 70
- 238000005086 pumping Methods 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 46
- 239000002243 precursor Substances 0.000 claims description 43
- 239000012495 reaction gas Substances 0.000 claims description 41
- 238000010926 purge Methods 0.000 claims description 40
- 238000002347 injection Methods 0.000 claims description 29
- 239000007924 injection Substances 0.000 claims description 29
- 239000011553 magnetic fluid Substances 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000007888 film coating Substances 0.000 claims description 10
- 238000009501 film coating Methods 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a vacuum control system of an atomic layer deposition coating machine, which relates to the technical field of vacuum coating, and comprises an A hot trap, a coating vacuum chamber, an A control component, a B hot trap, a B control component and a molecular pump which are sequentially connected through a pipeline, wherein the A hot trap and the molecular pump are both connected with a preceding stage vacuum pump; and a valve A is arranged between the hot trap A and the coating vacuum chamber. The vacuum control system and the corresponding control method can effectively improve the background vacuum degree and the coating vacuum degree of the atomic layer deposition coating machine so as to reduce the influence of residual physical adsorption gas molecules on the properties of an atomic layer deposition film, and can ensure that the molecular pump is only used for obtaining the background vacuum through the cooperation of the B heat trap, the A control assembly and the backing vacuum pump so as to improve the service efficiency and the service life of the molecular pump.
Description
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a vacuum control system and a control method of an atomic layer deposition coating machine.
Background
The atomic layer deposition coating is a necessary technology for the conductor chip processing technology and the nanometer material surface coating. The coating principle is as follows: two kinds of gas molecules alternately entering the film coating vacuum chamber are sequentially chemically adsorbed on the surface of the solid, and chemical reaction is carried out on the surface to generate the required film. The specific coating process comprises the following steps: firstly, reacting gas molecules enter a film coating vacuum chamber and are chemically adsorbed into a single layer on the surface of a substrate; then the other gas enters the film coating vacuum chamber to chemically react with the adsorbed molecules of the previous chemical adsorption. The chemical adsorption of gas molecules has obvious self-saturation effect under the limitation of the surface chemical bond of the substrate, so that each time the gas molecules enter the coating vacuum chamber, only one molecular layer can be chemically adsorbed on the surface of the coating substrate, and a single-layer or sub-single-layer film is formed through chemical reaction. Because gas molecules freely move in the coating vacuum chamber, the gas molecules can enter different areas of the surface of the micro-nano structure with larger depth/width ratio and even the inside of the nano tube, thereby preparing the film with uniform thickness and without pinhole defects on the surfaces of various micro-nano structures.
The prior atomic layer deposition coating machine generally adopts a mechanical pump and a backing pump to obtain vacuum, and the system works at 10 DEG -3 mbar and lower background vacuum. The molecular pump can obtain higher vacuum degree, and chemical gas phase reaction of multi-layer adsorbed molecules is effectively avoided; meanwhile, the residual gas molecules are less, and the oxidation reaction of the active metal film can be avoidedAnd the like. However, the metal precursor gas molecules used in the atomic layer deposition are also adsorbed to the interior of the molecular pump and react in the vacuum pump, which causes damage to the molecular pump and greatly shortens the service life of the molecular pump.
Disclosure of Invention
The invention aims to overcome the defect of low reaction vacuum degree in the existing atomic layer deposition coating technology, and provides a vacuum control system of an atomic layer deposition coating machine.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions: a vacuum control system of an atomic layer deposition coating machine comprises an A hot trap, a coating vacuum chamber, an A control assembly, a B hot trap and a molecular pump which are sequentially connected through a pipeline, wherein the A hot trap and the molecular pump are both connected with a backing vacuum pump; a valve A is arranged between the hot trap A and the coating vacuum chamber;
the number of the backing vacuum pumps is two, one backing vacuum pump A is connected with the hot trap A, and the other backing vacuum pump B is connected with the molecular pump; or the preceding vacuum pump is one, and the preceding vacuum pump is connected with and controlled by the molecular pump and the A hot trap through a three-way pipe and a vacuum valve;
the control component A is an electric or pneumatic control high-temperature-resistant large-caliber vacuum valve.
Furthermore, a B control component is arranged between the B hot trap and the molecular pump and used for adjusting the pumping speed of the molecular pump;
the control assembly B comprises a driving mechanism arranged outside the vacuum pipeline, a magnetic fluid sealing element connected with the output end of the driving mechanism and the vacuum pipeline, and a rotating mechanism connected with the magnetic fluid sealing element and arranged in the vacuum pipeline;
the rotating mechanism comprises a rotating shaft connected with the output end of the magnetic fluid sealing element and arranged in the vacuum pipeline, a rotating bearing arranged on the inner wall of the vacuum pipeline and rotatably connected with one end of the rotating shaft far away from the output end of the magnetic fluid sealing element, and a valve block arranged on the rotating shaft and driven to rotate by the rotating shaft.
Further, the coating process based on the continuous air-extracting working mode comprises the following control steps:
step S1: placing the element into a coating vacuum chamber, firstly opening an A valve between an A heat trap and the coating vacuum chamber, vacuumizing to a certain vacuum degree by adopting an A pre-stage vacuum pump, then closing the A valve, opening an A control assembly, adjusting a B control assembly to be the maximum air suction rate, vacuumizing the coating vacuum chamber by utilizing a B pre-stage vacuum pump and a molecular pump, heating the coating vacuum chamber, and heating the A heat trap and the B heat trap until the preset temperature and the preset vacuum degree are reached;
step S2: adjusting the pumping rate of the molecular pump through the control component B, vacuumizing by using the molecular pump and a preceding stage vacuum pump, and injecting reaction gas into the coating vacuum chamber until the reaction gas is injected completely;
and step S3: after the reaction gas is injected, adjusting the pumping rate of the molecular pump through the control component B, vacuumizing by using the molecular pump and a pre-stage vacuum pump B, and injecting purge gas into the coating vacuum chamber;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump is adjusted through the control component B, and the molecular pump and the pre-stage vacuum pump B are used for pumping vacuum to reach a preset vacuum degree;
step S5: after the molecular pump is vacuumized, closing the control component A, opening a valve A, vacuumizing by using a front-stage vacuum pump A, and then injecting a metal precursor into the coating vacuum chamber;
step S6: after the injection of the metal precursor is finished, vacuumizing by using a front-stage vacuum pump A, and injecting purge gas into the coating vacuum chamber again;
step S7: after the injection of the purge gas is finished, closing the valve A, adjusting the pumping rate of the molecular pump through the control component B, simultaneously opening the control component A, and vacuumizing by adopting the molecular pump and a pre-stage vacuum pump B;
step S8: and (5) repeating the step (S2) to the step (S7) to a preset number to finish the film coating process.
Further, the method is used for the coating process based on the residence mode and comprises the following control steps:
step S1: placing the element into a coating vacuum chamber, firstly opening an A valve between an A heat trap and the coating vacuum chamber, adopting an A preceding stage vacuum pump to pump vacuum to a certain vacuum degree, then closing the A valve, opening an A control assembly, adjusting the B control assembly to the maximum pumping rate, utilizing a B preceding stage vacuum pump and a molecular pump to pump vacuum to the coating vacuum chamber, heating the coating vacuum chamber, and heating the A heat trap and the B heat trap until reaching the preset temperature and vacuum degree;
step S2: closing the control assembly A, and injecting reaction gas into the coating vacuum chamber until the reaction gas is completely injected;
and step S3: after the reaction gas is injected, opening the control assembly A, adjusting the pumping rate of the molecular pump through the control assembly B, vacuumizing by using the molecular pump and a pre-stage vacuum pump B, and injecting purge gas into the coating vacuum chamber;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump is adjusted through the control component B, and the molecular pump and the pre-stage vacuum pump B are used for pumping vacuum to reach a preset vacuum degree;
step S5: after the molecular pump finishes pumping vacuum, closing the control assembly A, closing the valve A, and then injecting a metal precursor into the coating vacuum chamber;
step S6: after the injection of the metal precursor is finished, opening a valve A, and injecting a purging gas into the coating vacuum chamber by utilizing the vacuum pumping of a front-stage vacuum pump A;
step S7: after the injection of the purge gas is finished, closing the valve A, adjusting the pumping rate of the molecular pump through the control component B, simultaneously opening the control component A, and vacuumizing by adopting the molecular pump and a pre-stage vacuum pump B;
step S8: and (5) repeating the step (S2) to the step (S7) to a preset number to finish the film coating process.
The reaction gas is water vapor, alcohol vapor, oxygen and hydrogen.
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention realizes the coating vacuum acquisition of the atomic layer deposition coating by adopting the mutual matching of the pre-stage vacuum pump and the molecular pump, thereby effectively improving the vacuum degree in the atomic layer deposition coating process;
(2) The molecular pump can be only used for obtaining background vacuum through the cooperation of the heat trap B, the control assembly A and the front stage vacuum pump A, so that the service efficiency and the service life of the molecular pump are improved;
(3) By improving the vacuum degree, the influence of residual gas molecules on the film, such as oxidation of active metal, can be reduced, and the film performance is effectively improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a vacuum control system of an atomic layer deposition coating machine according to the present invention;
FIG. 2 is a schematic diagram of a control unit B according to the present invention;
FIG. 3 is a schematic structural view of example 3 of the present invention;
fig. 4 is a schematic diagram of the operation of embodiment 4 and embodiment 5 of the present invention.
Wherein: 101. a, a preceding stage vacuum pump; 102. a, a hot trap; 103. a molecular pump; 104. b, a hot trap; 105. a film coating vacuum chamber; 106. a, a valve; 107. a control component; 108. b, a control component; 109. b, backing vacuum pump; 201. a drive mechanism; 202. a magnetic fluid sealing element; 203. a rotating shaft; 204. a valve plate; 205. rotating the bearing; 206. a vacuum conduit wall; 301. a tee joint; 302. a valve D; 303. an E valve; 401. a reaction gas control valve; 402. a purge gas control valve; 403. a metal precursor control valve.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. While the illustrated embodiment of the invention does not incorporate the usual structures of vacuum systems such as vacuum gauges, inflation valves, etc., the components of the embodiment of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures. Also, in the description of the present invention, the terms "a", "B", and the like are used for distinguishing between descriptions and not to indicate or imply relative importance or any actual relationship or order between such entities or operations.
A vacuum control system of an atomic layer deposition coating machine comprises an A hot trap, a coating vacuum chamber, an A control assembly, a B hot trap and a molecular pump which are sequentially connected through pipelines, wherein the A hot trap and the molecular pump are respectively connected with an A backing vacuum pump and a B backing vacuum pump.
The A front-stage vacuum pump is used for obtaining low vacuum of the coating vacuum chamber and pumping the metal precursor molecules. A valve A is arranged between the hot trap A and the coating vacuum chamber, and the pre-stage vacuum pump A is controlled to realize the acquisition of low vacuum of the coating vacuum chamber and the extraction of metal precursor gas molecules by controlling the opening or closing of the valve A;
the B fore vacuum pump is used for a fore vacuum pump of the molecular pump, and the molecular pump is matched with the B fore vacuum pump for use and is used for obtaining high-vacuum conditions required by coating;
the A heat trap is used for decomposing metal precursor gas molecules entering the A fore vacuum pump at high temperature to enable the metal precursor gas molecules to become stable gas molecules, so that the service life of the A fore vacuum pump is prolonged;
the B hot trap is used for decomposing metal precursor gas molecules entering the molecular pump at high temperature to enable the metal precursor gas molecules to become stable gas molecules, and the service life of the molecular pump is prolonged.
The control component A is an electric or pneumatic control high-temperature-resistant large-caliber vacuum valve.
The invention can effectively improve the vacuum degree and reduce the influence of residual reaction gas on the performance of the atomic layer deposition coating; through setting up the wall of A control assembly to cooperation B heat trap avoids a large amount of entering molecular pump of metal precursor molecule, thereby improves molecular pump's availability factor and life.
In a more optimized scheme, a B control component is arranged between the B hot trap and the molecular pump and used for adjusting the pumping rate of the molecular pump so as to improve the retention time of the metal precursor molecules in the B hot trap. The control component B comprises a driving mechanism, a magnetic fluid sealing element which is connected with the output end of the driving mechanism and is arranged on the wall of the vacuum pipeline, and an air pumping speed adjusting mechanism which is connected with the output end of the magnetic fluid sealing element and is arranged in the vacuum pipeline. The adjusting mechanism comprises a rotating shaft, a rotating bearing and a valve plate, wherein the rotating shaft is connected with the output end of the magnetic fluid sealing element and is arranged in the vacuum pipeline, the rotating bearing is installed on the inner wall of the vacuum pipeline and is rotatably connected with one end, far away from the magnetic fluid sealing element, of the rotating shaft, and the valve plate is installed on the rotating shaft and is driven to rotate by the rotating shaft.
The valve plate is a panel with the section consistent with the inner diameter of the vacuum pipeline, and the angle of the valve plate relative to the gas flowing direction is controlled by the rotation of the rotating shaft driven by the driving mechanism and the magnetic fluid sealing element. When the molecular pump is used, the output end of the driving mechanism rotates to drive the rotating shaft arranged in the vacuum pipeline to rotate, so that the valve plate arranged on the rotating shaft is driven to rotate, and when the valve plate is parallel to the flowing direction of gas in the pipeline, the gas pumping rate of the molecular pump is the maximum; when the valve plate is perpendicular to the flowing direction of the gas in the pipeline, the pumping speed of the molecular pump is the minimum.
A control system method of a vacuum control system of an atomic layer deposition coating machine is used for a coating process based on a continuous air-extracting working mode and comprises the following steps:
step S1: placing the element into a coating vacuum chamber, firstly opening an A valve between an A heat trap and the coating vacuum chamber, vacuumizing to a certain vacuum degree by adopting an A pre-stage vacuum pump, then closing the A valve, opening an A control assembly, adjusting a B control assembly to be the maximum air suction rate, vacuumizing the coating vacuum chamber by utilizing a B pre-stage vacuum pump and a molecular pump, heating the coating vacuum chamber, and heating the A heat trap and the B heat trap until the preset temperature and the preset vacuum degree are reached;
step S2: adjusting the pumping rate of the molecular pump through the control assembly B, vacuumizing by using the molecular pump and a preceding stage vacuum pump, and injecting reaction gas into the coating vacuum chamber until the injection of the reaction gas is finished;
and step S3: after the reaction gas is injected, adjusting the pumping rate of the molecular pump through the control component B, vacuumizing by using the molecular pump and a pre-stage vacuum pump B, and injecting purge gas into the coating vacuum chamber;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump is adjusted through the control component B, and the molecular pump and the pre-stage vacuum pump B are used for pumping vacuum to reach a preset vacuum degree;
step S5: after the molecular pump is vacuumized, closing the control assembly A, opening the valve A, vacuumizing by using a front-stage vacuum pump A, and then injecting a metal precursor into the coating vacuum chamber;
step S6: after the injection of the metal precursor is finished, vacuumizing by using a front-stage vacuum pump A, and injecting purge gas into the coating vacuum chamber again;
step S7: after the injection of the purge gas is finished, closing the valve A, adjusting the pumping rate of the molecular pump through the control component B, simultaneously opening the control component A, and vacuumizing by adopting the molecular pump and a pre-stage vacuum pump B;
step S8: and (5) repeating the step (S2) to the step (S7) to a preset number to finish the film coating process.
A method of a vacuum control system of an atomic layer deposition coating machine is used for a coating process based on a residence mode, and comprises the following steps:
step S1: placing the element into a coating vacuum chamber, firstly opening an A valve between an A heat trap and the coating vacuum chamber, vacuumizing to a certain vacuum degree by adopting an A pre-stage vacuum pump, then closing the A valve, opening an A control assembly, adjusting a B control assembly to be the maximum air suction rate, vacuumizing the coating vacuum chamber by utilizing a B pre-stage vacuum pump and a molecular pump, heating the coating vacuum chamber, and heating the A heat trap and the B heat trap until the preset temperature and the preset vacuum degree are reached;
step S2: closing the control assembly A, and injecting reaction gas into the coating vacuum chamber until the reaction gas is completely injected;
and step S3: after the reaction gas is injected, opening the control assembly A, adjusting the pumping rate of the molecular pump through the control assembly B, vacuumizing by using the molecular pump and a pre-stage vacuum pump B, and injecting purge gas into the coating vacuum chamber;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump is adjusted through the control component B, and the molecular pump and the pre-stage vacuum pump B are used for pumping vacuum to reach a preset vacuum degree;
step S5: after the molecular pump finishes pumping vacuum, closing the control assembly A, closing the valve A, and then injecting a metal precursor into the coating vacuum chamber;
step S6: after the injection of the metal precursor is finished, opening a valve A, and injecting a purging gas into the coating vacuum chamber by utilizing the pumping of a pre-stage vacuum pump A;
step S7: after the injection of the purge gas is finished, closing the valve A, adjusting the pumping rate of the molecular pump through the control component B, simultaneously opening the control component A, and vacuumizing by adopting the molecular pump and a pre-stage vacuum pump B;
step S8: and (5) repeating the step (S2) to the step (S7) to a preset number to finish the film coating process.
The reaction gas is water vapor, alcohol vapor, oxygen, hydrogen and other gases, and can also be other gases which have small influence on the molecular pump.
If the reaction gas is a gas having a large influence on the molecular pump, the same pumping method as that of the metal precursor is adopted. In this case, S2 to S4 adopt the same control method as S5 to S7.
Example 1:
the invention is realized by the following technical scheme that as shown in figures 1-4,
a vacuum control system of an atomic layer deposition coating machine comprises a front-stage vacuum pump A101, a hot trap A102, a coating vacuum chamber 105, a control component A107, a hot trap B104, a control component B108 and a molecular pump 103 which are sequentially connected through pipelines; the other end of the molecular pump 103 is connected with a B foreline vacuum pump 109; an A valve 106 is arranged between the A hot trap 102 and the coating vacuum chamber 105.
In use, the reaction gas, the purge gas, and the metal precursor gas are introduced into the plating vacuum chamber 105 and adsorbed onto the surface of the plated substrate. The metal precursor contains metal elements, and if the metal elements are adsorbed to the parts such as a rotating bearing of the molecular pump, the molecular pump can be damaged. In order to avoid that the molecular pump 103 cannot be used because the molecular pump 103 is polluted by the metal precursor gas molecules entering the molecular pump 103, the coating vacuum chamber 105 is evacuated by the a-stage vacuum pump 101 after the metal precursor enters the vacuum chamber, and the molecular pump 103 is not used for evacuation.
After the metal precursor is purged by inert gases such as nitrogen, a high vacuum degree is obtained by pumping the vacuum chamber by the molecular pump, and at the moment, a small amount of residual metal precursor molecular pump is possible, so that a B hot trap 104 is arranged between an A control assembly 107 and a B control assembly 108, the B hot trap 104 decomposes metal precursor gas molecules which are about to enter the molecular pump by using high temperature, and the influence of the metal precursor gas on the service life of the molecular pump 103 is further avoided.
Example 2:
the present embodiment further refines the structure of the B control module 108 on the basis of the above embodiment 1.
As shown in fig. 2, the B control assembly 108 includes a driving mechanism 201 disposed outside the pipeline, and an adjusting mechanism connected to an output end of the driving mechanism 201 and disposed inside the pipeline.
The driving mechanism 201 is a rotating mechanism driven by a servo motor or a stepping motor.
Preferably, the adjusting mechanism includes a magnetic fluid sealing element 202 connected to the output end of the driving mechanism 201 and connected to the inner wall of the vacuum pipe 206 in vacuum, a rotating shaft 203 disposed in the vacuum pipe and connected to the output end of the magnetic fluid sealing element 202, a rotating bearing 205 mounted on the inner wall of the vacuum pipe and rotatably connected to the rotating shaft 203, and a valve plate 204 sleeved on the rotating shaft 203 and located between the magnetic fluid sealing element 202 and the rotating bearing 205.
The mechanism 201 is installed outside the vacuum pipe 206, and the output shaft thereof is connected with the rotating shaft 203 through the magnetic fluid sealing element 202. Because the valve plate 204 is installed on the rotating shaft 203, the profile of the valve plate 204 is consistent with the section of the vacuum pipeline, when the plane of the valve plate 204 is vertical to the gas flowing direction, the valve plate 204 forms a closed plate to close the pipeline, and the air suction speed is minimum. Under the driving of the driving structure 201, the valve plate 204 will rotate around the rotating shaft 203, thereby realizing the adjustment of the pumping speed and changing the pumping speed of the molecular pump 103. A rotary bearing 205 is installed on an inner side wall of the vacuum pipe 206, and the rotary bearing 205 is mainly used for supporting the rotary shaft 203.
Preferably, the valve plate 204 is made of a high-temperature resistant metal material.
Example 3:
the present embodiment is further optimized based on the above embodiment 1 or 2, and the specific difference is that in the present embodiment, only one backing vacuum pump is adopted, for example, only the a backing vacuum pump 101 is adopted, and then a three-way pipe 301 is utilized, so that the a backing vacuum pump 101 is simultaneously connected with the a hot trap 102 and the outlet of the molecular pump 103, and a D valve 302 is arranged between the a backing vacuum pump 101 and the outlet of the molecular pump 103; an E valve 303 is arranged between the A pre-stage vacuum pump 101 and the outlet of the A hot trap 102.
Because the A pre-stage vacuum pump 101 is respectively connected with the outlet of the molecular pump 103 and the coating vacuum chamber 105, when the molecular pump 103 and the A pre-stage vacuum pump 101 are matched to realize vacuum pumping, the E valve 303 between the A pre-stage vacuum pump 101 and the A hot trap 102 is closed, and the D valve 302 between the pre-stage vacuum pump and the molecular pump 103 is opened. After the metal precursor is injected into the coating vacuum chamber 105, in order to avoid the metal precursor from polluting the molecular pump 103, a pre-vacuum pump is adopted to directly vacuumize the coating vacuum chamber 105, at this time, a D valve 302 between the pre-vacuum pump and the molecular pump 103 needs to be closed, and an E valve 303 between the pre-vacuum pump and the a heat trap 102 needs to be opened. The multiple use of a backing vacuum pump is effectively realized, and the utilization rate of the backing vacuum pump is improved.
Other parts of this embodiment are the same as those of the above embodiment, and thus are not described again.
Example 4:
the present embodiment is a control method of the system in embodiment 1 or embodiment 2 in the continuous air-bleed operation mode, as shown in fig. 4, specifically including the following steps:
step S1: placing the element into a coating vacuum chamber 105, firstly opening a valve A between a heat trap 102A and the vacuum chamber 105, vacuumizing by adopting a front-stage vacuum pump 101, then closing the valve A, opening a control component 107 and adjusting a control component 108 to the maximum air exhaust rate, vacuumizing the coating vacuum chamber 105 by utilizing a front-stage vacuum pump 109B and a molecular pump 103, heating the coating vacuum chamber 105, and heating the heat trap 102A and the heat trap 104B until the preset temperature and the preset vacuum degree are reached;
step S2: vacuumizing by using a molecular pump 103 and a B pre-stage vacuum pump 109, adjusting the pumping rate of the molecular pump 103 by using a B control assembly 108, injecting reaction gas into the coating vacuum chamber 105 by opening a reaction gas control valve 401 until the injection of the reaction gas is finished, and closing the reaction gas control valve 401;
and step S3: after the injection of the reaction gas is finished, the molecular pump 103 and the B pre-stage vacuum pump 109 are utilized for vacuumizing, the B control assembly 108 adjusts the pumping rate of the molecular pump 103, and the purging gas is injected into the coating vacuum chamber 105 by opening the purging gas control valve 402;
and step S4: after the injection of the purge gas is finished, the purge gas control valve 402 is closed, the pumping rate of the molecular pump is adjusted through the B control assembly 108, and the molecular pump 103 and the B backing stage vacuum pump 109 are used for vacuum pumping treatment to reach higher background vacuum degree;
step S5: after the molecular pump 103 finishes vacuumizing, closing the control assembly 107A, opening the valve 106A, vacuumizing by using the pre-stage vacuum pump 101A, and injecting a metal precursor into the coating vacuum chamber 105 through the metal precursor control valve 403;
step S6: after the injection of the metal precursor is completed, closing the metal precursor control valve 403, and opening the purge gas control valve 402 to inject purge gas into the coating vacuum chamber 105 again;
step S7: after the purge gas is injected, the valve A106 is closed, the pumping rate of the molecular pump 103 is adjusted through the control component B108, the control component A108 is opened, and the molecular pump 103 and the foreline vacuum pump 109B are used for pumping vacuum to obtain high background vacuum degree.
Step S8: and (5) repeating the steps S1 to S7 until certain (set) coating times are finished, or the film reaches a certain thickness, and finishing coating.
Example 5:
this embodiment is a method for controlling the system of embodiment 1 or embodiment 2 in the resident operating mode, and specifically includes the following steps:
step S1: placing the element into a coating vacuum chamber 105, firstly opening an A valve between an A heat trap 102 and the vacuum chamber 105, vacuumizing by adopting an A pre-stage vacuum pump 101, then closing the A valve, opening an A control assembly 107, adjusting a B control assembly 108 to be the maximum air suction rate, vacuumizing the coating vacuum chamber 105 by utilizing a B pre-stage vacuum pump 109 and a molecular pump 103, heating the coating vacuum chamber 105, and heating the A heat trap 102 and the B heat trap 104 until the preset temperature and vacuum degree are reached;
step S2: closing the control component A107, and injecting reaction gas into the coating vacuum chamber 105 by opening the reaction gas control valve 401 until the reaction gas is completely injected;
and step S3: after the injection of the reaction gas is finished, opening the control assembly A107, adjusting the pumping rate of the molecular pump 103 through the control assembly B108, pumping vacuum by using the molecular pump 103 and the pre-stage vacuum pump 109, and injecting a purge gas into the coating vacuum chamber 105 through a purge gas control valve 402;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump 103 is adjusted through the B control assembly 108, and the molecular pump 103 and the B backing vacuum pump 109 are utilized for pumping vacuum to reach a preset vacuum degree;
step S5: after the evacuation of molecular pump 103 is completed, a control assembly 108 is turned off. Opening a metal precursor control valve 403 to inject a metal precursor into the coating vacuum chamber 105;
step S6: after the metal precursor injection is completed, the metal precursor control valve 403 is closed, the a valve 106 between the a heat trap 102 and the coating vacuum chamber 105 is opened, and the purge gas control valve 402 is opened to inject the purge gas into the coating vacuum chamber 105 again.
Step S7: after the injection of the purge gas and the protective gas is completed, the valve A106 is closed, the control component A107 is opened, the molecular pump 103 is adjusted through the control component B108, and the molecular pump 103 and the foreline vacuum pump B109 are adopted for vacuumizing to obtain high background vacuum degree.
Step S8: and (5) repeating the steps S1-S7 until certain coating times are finished or the film reaches a certain thickness, and finishing coating.
In this mode, in the process of injecting the reaction gas and the metal precursor into the coating vacuum chamber 105, the coating vacuum chamber is isolated from the a backing vacuum pump 101 by the a valve 106, and the coating vacuum chamber is isolated from the molecular pump by the a control assembly 108, so that the reaction gas can collide for a long time, enter different regions of the vacuum chamber, and be uniformly adsorbed on the surfaces of various shapes of elements.
The reaction gas is generally a compound containing no metal element, such as any of water vapor, alcohol vapor, oxygen, and hydrogen.
When the influence of the reaction gas on the molecular pump 103 is large, the same pumping manner as that of the metal precursor is adopted, that is, a backing vacuum pump is adopted to pump gas between the injection time and the purge time of the reaction gas, and the control assembly a 108 is closed to prevent the reaction gas from entering the molecular pump 103.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (5)
1. The utility model provides an atomic layer deposition coating machine's vacuum control system which characterized in that: the device comprises a heat trap A, a coating vacuum chamber, a control assembly A, a heat trap B and a molecular pump which are sequentially connected through pipelines, wherein the heat trap A and the molecular pump are both connected with a preceding stage vacuum pump; a valve A is arranged between the hot trap A and the coating vacuum chamber;
the number of the backing vacuum pumps is two, one backing vacuum pump A is connected with the hot trap A, and the other backing vacuum pump B is connected with the molecular pump; or the preceding vacuum pump is one, and the preceding vacuum pump is connected with and controlled by the molecular pump and the A hot trap through a three-way pipe and a vacuum valve;
the control component A is an electric or pneumatic control high-temperature-resistant large-caliber vacuum valve;
a B control component is arranged between the B hot trap and the molecular pump and is used for adjusting the pumping speed of the molecular pump;
the control component B comprises a driving mechanism arranged outside the vacuum pipeline, a magnetic fluid sealing element connected with the output end of the driving mechanism and connected with the vacuum pipeline, and a rotating mechanism connected with the magnetic fluid sealing element and arranged in the vacuum pipeline;
the rotating mechanism comprises a rotating shaft connected with the output end of the magnetic fluid sealing element and arranged in the vacuum pipeline, a rotating bearing arranged on the inner wall of the vacuum pipeline and rotatably connected with one end of the rotating shaft far away from the output end of the magnetic fluid sealing element, and a valve block arranged on the rotating shaft and driven to rotate by the rotating shaft.
2. The vacuum control system of the atomic layer deposition coating machine of claim 1, wherein: the coating process based on the continuous air-extracting working mode comprises the following control steps:
step S1: placing the element into a coating vacuum chamber, firstly opening an A valve between an A heat trap and the coating vacuum chamber, vacuumizing to a certain vacuum degree by adopting an A pre-stage vacuum pump, then closing the A valve, opening an A control assembly, adjusting a B control assembly to be the maximum air suction rate, vacuumizing the coating vacuum chamber by utilizing a B pre-stage vacuum pump and a molecular pump, heating the coating vacuum chamber, and heating the A heat trap and the B heat trap until the preset temperature and the preset vacuum degree are reached;
step S2: adjusting the pumping rate of the molecular pump through the control assembly B, vacuumizing by using the molecular pump and a preceding stage vacuum pump, and injecting reaction gas into the coating vacuum chamber until the injection of the reaction gas is finished;
and step S3: after the reaction gas is injected, adjusting the pumping rate of the molecular pump through the control component B, vacuumizing by using the molecular pump and a pre-stage vacuum pump B, and injecting purge gas into the coating vacuum chamber;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump is adjusted through the control component B, and the molecular pump and the pre-stage vacuum pump B are used for pumping vacuum to reach a preset vacuum degree;
step S5: after the molecular pump is vacuumized, closing the control assembly A, opening the valve A, vacuumizing by using a front-stage vacuum pump A, and then injecting a metal precursor into the coating vacuum chamber;
step S6: after the injection of the metal precursor is finished, vacuumizing by using a front-stage vacuum pump A, and injecting purge gas into the coating vacuum chamber again;
step S7: after the injection of the purge gas is finished, closing the valve A, adjusting the pumping rate of the molecular pump through the control component B, simultaneously opening the control component A, and vacuumizing by adopting the molecular pump and a pre-stage vacuum pump B;
step S8: and (5) repeating the step (S2) to the step (S7) to a preset number to finish the film coating process.
3. The vacuum control system of the atomic layer deposition coating machine of claim 1, wherein: the coating process based on the residence mode comprises the following control steps:
step S1: placing the element into a coating vacuum chamber, firstly opening an A valve between an A heat trap and the coating vacuum chamber, vacuumizing to a certain vacuum degree by adopting an A pre-stage vacuum pump, then closing the A valve, opening an A control assembly, adjusting a B control assembly to be the maximum air suction rate, vacuumizing the coating vacuum chamber by utilizing a B pre-stage vacuum pump and a molecular pump, heating the coating vacuum chamber, and heating the A heat trap and the B heat trap until the preset temperature and the preset vacuum degree are reached;
step S2: closing the control assembly A, and injecting reaction gas into the coating vacuum chamber until the reaction gas is completely injected;
and step S3: after the reaction gas is injected, opening the control assembly A, adjusting the pumping rate of the molecular pump through the control assembly B, vacuumizing by using the molecular pump and a pre-stage vacuum pump B, and injecting purge gas into the coating vacuum chamber;
and step S4: after the injection of the purge gas is finished, the pumping rate of the molecular pump is adjusted through the control component B, and the molecular pump and the pre-stage vacuum pump B are used for pumping vacuum to reach a preset vacuum degree;
step S5: after the molecular pump finishes pumping vacuum, closing the control assembly A, closing the valve A, and then injecting a metal precursor into the coating vacuum chamber;
step S6: after the injection of the metal precursor is finished, opening a valve A, and injecting a purging gas into the coating vacuum chamber by utilizing the vacuum pumping of a front-stage vacuum pump A;
step S7: after the injection of the purge gas is finished, closing the valve A, adjusting the pumping rate of the molecular pump through the control component B, simultaneously opening the control component A, and adopting the molecular pump and a pre-stage vacuum pump B to pump vacuum;
step S8: and (5) repeating the step (S2) to the step (S7) to a preset number to finish the film coating process.
4. The vacuum control system of an atomic layer deposition coating machine as claimed in claim 2, wherein: the reaction gas is water vapor, alcohol vapor, oxygen and hydrogen.
5. The vacuum control system of the atomic layer deposition coating machine of claim 3, wherein: the reaction gas is water vapor, alcohol vapor, oxygen and hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011320038.9A CN112430805B (en) | 2020-11-23 | 2020-11-23 | Vacuum control system of atomic layer deposition coating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011320038.9A CN112430805B (en) | 2020-11-23 | 2020-11-23 | Vacuum control system of atomic layer deposition coating machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112430805A CN112430805A (en) | 2021-03-02 |
| CN112430805B true CN112430805B (en) | 2022-12-30 |
Family
ID=74693558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011320038.9A Active CN112430805B (en) | 2020-11-23 | 2020-11-23 | Vacuum control system of atomic layer deposition coating machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112430805B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115786882A (en) * | 2022-11-21 | 2023-03-14 | 拓荆科技股份有限公司 | Pump unit system, process method and device and semiconductor process equipment |
| US20240350962A1 (en) * | 2023-04-20 | 2024-10-24 | Applied Materials, Inc. | System to collect, recover and recycle chemical exhaust from semiconductor processing chambers |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6332925B1 (en) * | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
| CN1298885C (en) * | 2003-12-19 | 2007-02-07 | 储继国 | Vacuum deposition equipment |
| DE102009055638A1 (en) * | 2009-11-25 | 2011-05-26 | Oerlikon Leybold Vacuum Gmbh | Hot Fall arrangement |
| CN206887225U (en) * | 2017-06-01 | 2018-01-16 | 广州市靓渡塑料镀膜有限公司 | A kind of high vacuum unit for ion plating equipment |
| CN207632888U (en) * | 2017-12-25 | 2018-07-20 | 苏州浩联光电科技有限公司 | A kind of symmetrical pair of high-vacuum pump extract system and coating system |
| CN111575652A (en) * | 2020-04-02 | 2020-08-25 | 上海大学 | Vacuum coating equipment and vacuum coating method |
-
2020
- 2020-11-23 CN CN202011320038.9A patent/CN112430805B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112430805A (en) | 2021-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100231255B1 (en) | Vacuum exhausting system for treating apparatus | |
| CN1177079C (en) | In site getter pump system and method | |
| CN112430805B (en) | Vacuum control system of atomic layer deposition coating machine | |
| JP3667202B2 (en) | Substrate processing equipment | |
| US5611863A (en) | Semiconductor processing apparatus and cleaning method thereof | |
| KR20100086508A (en) | Film formation device and film formation method | |
| CN110055513B (en) | Powder atomic layer deposition equipment and deposition method and application thereof | |
| CN210065900U (en) | Intermediate frequency reaction magnetron sputtering coating equipment | |
| CN114318285B (en) | Vacuum coating equipment and coating method thereof | |
| CN208649461U (en) | Apparatus for atomic layer deposition | |
| US6669987B1 (en) | Method for vacuum treatment of workpieces and vacuum treatment facility | |
| CN217297997U (en) | Vacuum cavity structure and vacuum coating equipment | |
| JP3982673B2 (en) | Operation method of vacuum exhaust system | |
| US20080078503A1 (en) | Mechanical pump operating well for a long term and method of manufacturing the same | |
| JP2002168192A (en) | Vacuum pump | |
| CN114481082A (en) | Be used for face identification light filter coating equipment | |
| JPH03106432A (en) | Method and device for degassing vacuum apparatus | |
| CN216274362U (en) | Powder atomic layer deposition equipment | |
| TWI771939B (en) | Atomic layer deposition apparatus and method with inter-circulated delivery of precursors | |
| CN219195112U (en) | Magnetron sputtering instrument | |
| CN115821209B (en) | Device for efficiently preparing refractory metal coating on inner and outer surfaces of thrust chamber body of engine | |
| JP2011171468A (en) | Thin film formation device and method for forming the thin film | |
| JPH02153294A (en) | Variable capacity type vacuum pump | |
| EP1722006A1 (en) | Method for the anticorrosion surface treatment of containers for fluids, container provided by means of the method, and apparatus for performing the method | |
| CN115747762A (en) | Method for efficiently preparing refractory metal coating on inner surface and outer surface of engine thrust chamber body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |