CN112430113A - 一种新型反应烧结SiC陶瓷材料及其制备方法 - Google Patents
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Abstract
本发明提出一种新型反应烧结SiC陶瓷材料，其组分及含量（重量比）为：SiC：70%~80%，C纤维：10~13%，BC：7.5~12%，助剂：2.5~5%；本发明这种SiC陶瓷材料的制备方法，其包括以下步骤：原料准备，原料三维预混，原料湿混、压滤，坯料真空挤出，真空烧结、冷却，以及微波烘干。采用上述的配方及制备方法制得的SiC陶瓷的抗折性以及抗冲击性得到了提高；另外，材料的耐磨性以及耐腐蚀性也更为优异。
Description
技术领域
本发明涉及SiC陶瓷材料及其制备工艺技术领域，特别涉及一种具有高韧性高耐磨性的新型反应烧结SiC陶瓷材料及其制备方法。
背景技术
SiC陶瓷不仅具有优良的常温力学性能，如高的抗弯强度、优良的抗氧化性、良好的耐腐蚀性、高的抗磨损以及低的摩擦系数，而且高温力学性能包括强度、抗蠕变性等是已知陶瓷材料中最佳的。一般的SiC陶瓷材料的耐高温强度可达1380℃左右，是陶瓷材料中高温强度最好的材料；另外，其高温抗氧化性也是所有非氧化物陶瓷中最好的。但是SiC陶瓷的缺点是断裂韧性较低，即脆性较大，在某些应用场合，比如制作用于水泥生产中的预热器内筒挂片时，由于物料需要自上而下通过预热器，对挂片产生摩擦和冲击，因此，需要提高其韧性提高其强度；而且，挂片的耐高温性能也需要进一步提升。
为了提高SiC陶瓷材料的耐高温和抗氧化性，有研究人员提出在SiC陶瓷中引入硼（B）、钛（Ti）等异质元素；而为了提高SiC陶瓷的韧性，也有业界的研究人员提出了一种碳纤维增强SiC复合陶瓷的制备方法。然而，目前尚未有将碳纤维增强与掺硼结合在一起进行SiC陶瓷反应烧结制备的有效的工艺方案。
发明内容
针对现有的SiC陶瓷材料在实际应用中的不足，本发明的目的是提供一种耐温性能更高，韧性更优的新型反应烧结SiC陶瓷材料及其制备方法。
为达到本发明的目的，本发明的一种新型反应烧结SiC陶瓷材料的组分及含量（重量比）为：SiC：70%~80%，C纤维：10~13%，BC：7.5~12%，助剂：2.5~5%，其中，所述的助剂包括粘结剂以及有机助剂。
优选的，所述的助剂包括酚醛树脂、糊精。
根据本发明的另一目的，本发明还提出一种新型反应烧结SiC陶瓷材料的制备方法，所述制备方法包括以下步骤：
S1，原料准备：按上述的材料组分及含量准备原料；
S2，原料预混：采用“三维混料”方式将原料预混充分；
S3，原料湿混：对预混后的原料加水湿混，通过滤泥机进行泥浆压滤；
S4，坯料真空挤出：将压滤后的泥料采用真空挤出机挤出坯料，真空挤出机的压力为9±0.5Mp，挤出温度5℃以下，真空度-0.7~-0.9；
S5，烧结：将坯料采用真空烧结炉烧结，烧结温度1800℃±50℃，烧结时间3±0.5小时；烧结后冷却；
S6，烘干：将烧结后的材料采用微波烘干，得到制成品。
采用上述的配方及制备方法制得的SiC陶瓷的抗折性以及抗冲击性得到了提高；另外，材料的耐磨性以及耐腐蚀性也更为优异。
附图说明
通过下面结合附图的详细描述，本发明前述的和其他的目的、特征和优点将变得显而易见。其中：
图1所示为本发明的一种新型反应烧结SiC陶瓷材料的制备方法的工艺流程示意图。
具体实施方式
结合附图本发明的特点及优点详述如下。
本发明的一种新型反应烧结SiC陶瓷材料的组分及含量（重量比）为：SiC：70%~80%，C纤维：10~13%，BC：7.5~12%，助剂：2.5~5%，其中，所述的助剂包括粘结剂以及有机助剂。
在上述的组分中，通过在SiC陶瓷中加入C纤维可以有效提高材料本身的抗折以及抗冲击性，即增加陶瓷材料的韧性；加入碳化硼（BC），在材料中引入硼（B）元素可以提高材料的耐磨性以及耐腐蚀性。
为了提高SiC陶瓷制备过程中生坯的强度，提高成品率以及有效降低生产成本，上述的助剂采用粘结剂与多种助剂如酚醛树脂、糊精等构成的混合助剂，如德国司马公司的陶瓷助剂。
参照图1所示的本发明新型反应烧结SiC陶瓷材料的制备方法的工艺流程示意图，所述制备方法包括以下步骤：
S1，原料准备：按上述的材料组分及含量准备原料，其中，所述的SiC采用结晶好的SiC原块；
S2，原料预混：采用三维混料机将原料预混充分，防止材料团聚；
S3，原料湿混：对预混后的原料加水湿混，通过滤泥机进行泥浆压滤，使泥料的混合更均匀；
S4，坯料真空挤出：将压滤后的泥料采用真空挤出机挤出坯料，以此增加坯料的致密性，提高烧结后的产品性能，真空挤出机的压力为9±0.5Mp，挤出温度5℃以下，真空度-0.7~-0.9；
S5，烧结：采用真空烧结炉烧结，烧结温度1800℃±50℃，烧结时间3±0.5小时；烧结后的冷却；
S6，烘干：采用微波烘干，防止在产品烘干过程中造成产品内部缺陷，如断裂、裂纹等。
采用上述的配方及制备方法制得的SiC陶瓷的抗折性以及抗冲击性得到了提高；另外，材料的耐磨性以及耐腐蚀性也更为优异。
实施例一：
按重量百分比以及烧结炉的标定容量，称取75%的SiC，12%的C纤维，8.2%的BC，4.8%的陶瓷助剂；将上述原料通过三维混料机进行充分预混后送入湿混机，注水湿混，通过滤泥机将混合均匀的泥浆进行压滤，压滤后的泥料放入真空挤出机挤出坯料，真空挤出机的压力为9Mp，挤出温度4.5℃，真空度-0.7；坯料挤出后进入真空烧结炉烧结，烧结温度1800℃，烧结时间3小时；烧结后的材料冷却后通过微波烘干制得SiC陶瓷材料。
实施例二：
按重量百分比以及烧结炉的标定容量，称取78%的SiC，9%的C纤维，10%的BC，3%的陶瓷助剂；将上述原料通过三维混料机进行充分预混后送入湿混机，注水湿混，通过滤泥机将混合均匀的泥浆进行压滤，压滤后的泥料放入真空挤出机挤出坯料，真空挤出机的压力为9.2Mp，挤出温度4.8℃，真空度-0.8；坯料挤出后进入真空烧结炉烧结，烧结温度1820℃，烧结时间3小时；烧结后的材料冷却后通过微波烘干制得SiC陶瓷材料。
本发明并不局限于所述的实施例，本领域的技术人员在不脱离本发明的精神即公开范围内，仍可作一些修正或改变，故本发明的权利保护范围以权利要求书限定的范围为准。
Claims (3)
1.一种新型反应烧结SiC陶瓷材料，其特征在于，所述陶瓷材料的的组分及含量（重量比）为：SiC：70%~80%，C纤维：10~13%，BC：7.5~12%，助剂：2.5~5%，其中，所述的助剂包括粘结剂以及有机助剂。
2.如权利要求1所述的一种新型反应烧结SiC陶瓷材料，其特征在于，所述的助剂包括酚醛树脂、糊精。
3.一种制备如权利要求1所述的新型反应烧结SiC陶瓷材料的制备方法，所述制备方法包括以下步骤：
S1，原料准备：按材料组分及含量准备原料；
S2，原料预混：采用“三维混料”方式将原料预混充分；
S3，原料湿混：对预混后的原料加水湿混，通过滤泥机进行泥浆压滤；
S4，坯料真空挤出：将压滤后的泥料采用真空挤出机挤出坯料，真空挤出机的压力为9±0.5Mp（数值范围），挤出温度5℃以下，真空度-0.7~-0.9；
S5，烧结：将坯料采用真空烧结炉烧结，烧结温度1800℃±50℃（数值范围），烧结时间3±0.5小时（数值范围）；以及
S6，烘干：将烧结后的材料采用微波烘干，得到制成品。
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Citations (9)
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