CN112424393A

CN112424393A - Cooling system for cooling a deposition area, arrangement for performing material deposition, and method of performing deposition on a substrate

Info

Publication number: CN112424393A
Application number: CN201880093193.6A
Authority: CN
Inventors: 斯蒂芬·班格特
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2018-06-15
Filing date: 2018-06-15
Publication date: 2021-02-26
Also published as: TW202025413A; WO2019238245A1; KR20200138391A

Abstract

A cooling system disposed in a vacuum chamber for cooling a deposition area, comprising an active cooling device comprising a first surface and a second surface; the first surface is disposed between the second surface and the deposition area, and the heat exchanger is configured to actively cool the first surface by transferring heat away from the first surface. An arrangement for material deposition on a substrate, comprising: a deposition source for performing material deposition on the substrate in the deposition area; a cooling system having a first active cooling device having an actively cooled first surface and a heat exchanger configured to transfer heat away from the first surface; whereby the actively-cooled first surface is configured to transfer a cooling load away from the deposition area; and a cooling arrangement having a second active cooling device configured to reduce thermal radiation from the deposition source.

Description

Cooling system for cooling a deposition area, arrangement for performing material deposition, and method of performing deposition on a substrate

Technical Field

Embodiments of the present disclosure relate to material deposition, for example organic material deposition, systems, arrangements and methods for organic material deposition. Embodiments of the present disclosure relate, inter alia, to a cooling system disposed in a vacuum chamber (i.e., a vacuum chamber for material deposition) for cooling a deposition area. Embodiments of the present disclosure relate to arrangements for material deposition in a deposition area. Further, embodiments of the present disclosure relate to methods of material deposition on a substrate in a deposition area.

Background

Organic vaporizers are tools for producing Organic Light Emitting Diodes (OLEDs). An OLED is a special type of light emitting diode in which the emissive layer comprises a thin film of a specific organic compound. Organic Light Emitting Diodes (OLEDs) are used to manufacture television screens, computer displays, mobile phones, other handheld devices, etc. to display information. OLEDs are also used for general space illumination. OLED displays may have a larger range of colors, brightness, and viewing angles than conventional Liquid Crystal Display (LCD) displays because the OLED pixels emit light directly rather than using a backlight. Therefore, the energy consumption of the OLED display is lower than that of the conventional LCD display. Furthermore, the fact that OLEDs can be fabricated on flexible substrates has led to further applications. For example, a typical OLED display may include a layer of organic material disposed between two electrodes, all deposited on a substrate in a manner that forms a matrix display panel with independently energizable pixels. The OLED is typically placed between two glass panels, and the edges of the glass panels are sealed to encapsulate the OLED therein.

Different sized display screens and glass panels may require substantial reconfiguration of the processing and processing hardware used to form the display device. In general, it is desirable to fabricate OLED devices on large area substrates. Masking the substrate, such as the deposition of a patterned layer, for the manufacture of large OLED displays presents a number of challenges.

OLED displays comprise a stack of a plurality of organic materials, which are for example evaporated in vacuum. The organic material is deposited in a subsequent manner through a shadow mask. For efficient manufacturing of OLED stacks, co-deposition or co-evaporation of two or more materials is provided, for example providing a host and a dopant, resulting in mixed/doped layers. Further, it has to be considered that there is a requirement for the evaporation of very sensitive organic materials.

However, there is an increasing desire for production efficiency, particularly in the field of consumer electronics.

In view of the above, improved methods, systems, apparatuses, and arrangements for material deposition on a substrate would be beneficial. Embodiments of the present disclosure aim to provide systems, apparatuses, arrangements, and methods for material deposition that overcome at least some of the problems in the art.

Disclosure of Invention

In view of the above, a cooling system provided in a vacuum chamber for cooling a deposition area, an arrangement for performing material deposition in a deposition area, and a method of performing material deposition on a substrate in a deposition area are provided. Other aspects, benefits, and features of the disclosure are apparent from the claims, specification, and drawings.

According to a first aspect of the present disclosure, a cooling system disposed in a vacuum chamber for cooling a deposition area is provided. The cooling system includes an active cooling device including a first surface and a second surface, the first surface disposed between the second surface and the deposition area; and a heat exchanger configured to actively cool the first surface by transferring heat away from the first surface.

According to a further embodiment of the present disclosure, such a cooling system as described herein, the actively cooled first surface is configured to transfer a cooling load away from the deposition area, in particular away from the mask.

According to a second aspect of the present disclosure, an arrangement for material deposition on a substrate is provided. The arrangement includes a deposition source for performing material deposition on the substrate in a deposition region; a cooling system having an active cooling device comprising an actively cooled first surface for transferring at least part of the cooling load away from the deposition area, in particular away from the mask; and a support for supporting the deposition source and the cooling system, and configured to move the deposition source and the cooling system along the deposition area.

According to a still further aspect of the present disclosure, there is provided an arrangement for material deposition on a substrate. The arrangement includes a deposition source for performing material deposition on the substrate in a deposition region; a cooling system having a first active cooling device having an actively cooled first surface and a heat exchanger configured to transfer heat away from the first surface; the actively cooled first surface is configured to transfer at least part of the cooling load away from the deposition region, in particular away from the mask; and a cooling arrangement having a second active cooling device configured to reduce thermal radiation emitted by the deposition source.

According to yet a third aspect of the present disclosure, a method of material deposition on a substrate in a deposition area is provided. The method includes at least one of: maintaining a temperature gradient Δ TD (c) over time between this deposition area (in particular the mask) and the first surface of the cooling system; and transferring a cooling load away from the deposition region (particularly away from the mask) using a cooling system to maintain a substantially constant average temperature of the deposition region (particularly the temperature of the substrate and/or the temperature of the mask) over time.

According to yet another aspect of the present disclosure, a method of material deposition on a substrate is provided. The method includes moving a deposition source along the substrate during a first time period; cooling the substrate during a second time period within the first time period; and depositing material on the substrate during a third time period within the first time period, the temperature of the deposition area (in particular the temperature of the substrate and/or the temperature of the mask) being increased during the third time period.

According to yet a further aspect of the present disclosure, as described herein, cooling the deposition area (particularly the mask and/or the substrate) for one of the second time period and the fourth time period includes transferring at least a portion of the cooling load away from the deposition area, particularly away from the mask.

Drawings

So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. The attached drawings relate to embodiments of the invention and are described as follows:

FIG. 1 shows a schematic top view of a cooling system provided in a vacuum chamber according to embodiments described herein;

FIG. 2 illustrates the cooling system according to FIG. 1, further depicting heat transfer from the first surface to the second surface;

FIG. 3A shows the cooling system according to FIG. 1, further depicting an actively-cooled first surface configured to transfer at least a portion of the cooling load away from the deposition area;

FIG. 3B illustrates the cooling system according to FIG. 3A, depicting an actively cooled first surface having a high emissivity according to embodiments described herein;

FIG. 4A illustrates a top view of a cooling system further including at least one support according to embodiments described herein;

FIG. 4B illustrates a top view of a cooling system including at least one support according to embodiments described herein;

FIG. 5A shows a top view of an arrangement for material deposition in a deposition area according to embodiments described herein;

FIG. 5B shows a top view of a processing system (i.e., an in-line apparatus) for material deposition according to embodiments described herein;

FIG. 6 shows a top view of an arrangement for material deposition in a deposition area according to embodiments described herein;

FIG. 7 illustrates the arrangement of FIG. 6, further depicting heat transfer during operation;

fig. 8 shows the arrangement of fig. 6 and 7, the cooling system further comprising a third cooling device;

FIG. 9 shows the arrangement of FIG. 8 with the support, the cooling system further comprising a fourth cooling device;

FIG. 10 shows a flow diagram of a material deposition method according to embodiments described herein;

FIG. 11 shows a schematic of temperature fluctuations at a deposition area over time according to embodiments described herein;

FIG. 12 illustrates the method of FIG. 10 including cooling during a fourth time period according to embodiments described herein.

Fig. 13 illustrates the method of fig. 10 and 12 including cooling during a fifth time period according to embodiments described herein.

Detailed Description

Reference will now be made in detail to the various embodiments of the invention, one or more examples of which are illustrated in the figures. In the following description of the drawings, like reference numerals are used to indicate like parts. Generally, only the differences between the embodiments will be described. Each example is provided by way of explanation of the invention, not limitation of the invention. In addition, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. The subject matter is intended to embrace such modifications and variations.

Before describing various embodiments of the present disclosure in more detail, certain terms and expressions used herein have been explained in relation to certain aspects.

In the present disclosure, a "cooling system" may be defined as a system provided at least partially in a vacuum chamber for material deposition, e.g. organic material deposition, adapted, e.g. configured, to cool down a deposition area. In particular, the cooling system may include an active cooling device having a first surface and a second surface, the first surface being disposed between the second surface and the deposition area of the vacuum chamber. Further, the cooling system may include a heat exchanger configured to actively cool the first surface by transferring heat away from the first surface.

According to embodiments that may be combined with embodiments described herein, the "first surface" and the "second surface" of the active cooling device may be understood as corresponding to two surfaces different from the surface of the heat exchanger. For example, the heat exchanger may be "sandwiched" between a first surface and a second surface, and the active cooling device may include the first surface, the heat exchanger, and the second surface. Further, the active cooling device may include one or more intermediate layers between the heat exchanger and at least one of the first surface and the second surface. In particular, one or more intermediate layers may be made of a material that enhances heat transfer from the first surface to the second surface.

According to embodiments that may be combined with embodiments described herein, a "first surface" and a "second surface" may correspond to a first surface and a second surface of a heat exchanger. For example, the active cooling device may include a heat exchanger.

In the present disclosure, the term "heat exchanger" may be understood to include any device suitable for, for example, being configured to transfer heat from one object or item to another. In particular, a "heat exchanger" according to the present disclosure may include a device adapted, i.e., configured, to transfer heat from one fluid to another, from one fluid to a solid object, from a solid object to a fluid, or from a solid object to another solid object. The heat transfer may be performed by at least one of heat radiation, heat conduction, and heat convection.

In the present disclosure, a heat exchanger may be configured to "actively cool a first surface by transferring heat away from the first surface. A heat exchanger as described herein may be configured to apply energy and/or work (e.g., electrical energy and/or mechanical work) to cool the first surface.

In particular, heat may be transferred away from the first surface and from the deposition area, in particular from the mask and/or the substrate. For example, a heat exchanger may be understood as being suitable, e.g. configured, for imparting a temperature gradient between the deposition area and the first surface over time.

In the present disclosure, the term "gradient temperature" may refer to a modulus (absolute value) of a difference between a first temperature and a second temperature.

In the present disclosure, the term "cooling load" may be understood to essentially refer to the amount of heat present between the first surface and the deposition area.

Further, the term "cooling load" may be defined as the amount of thermal energy that may be removed from the deposition area to maintain the temperature within an acceptable temperature range. By "acceptable temperature range" it is understood to provide a temperature below 35 ℃, in particular below 30 ℃, more in particular in the range of 23 ℃ to 28 ℃. For example, a target temperature may be provided within an acceptable temperature range (e.g., within the ranges described above). According to some embodiments, which can be combined with embodiments described herein, the target temperature can be controlled to vary within a range of ± 1.5 ℃ or less. For example, the temperature may be controlled to be within a range of ± 1.0 ℃ or less, such as ± 0.5 ℃.

In the present disclosure, the term "cooling load" may further be understood as at least part of the thermal energy generated by the material deposition in the deposition area. In other words, the "cooling load" may refer to at least a portion of the thermal energy imparted by the deposition source at the deposition area during material deposition (e.g., by thermal radiation and/or enthalpy of evaporation).

In the present disclosure, the term "heat" may be understood to refer to the heat present between the first and second surfaces of the active cooling device. A heat exchanger as defined herein may be configured to transfer "heat" away from the first surface, in particular away from the first surface towards the second surface.

In view of this, the term "heat" may further correspond to at least a portion of a "cooling load" as defined herein. In particular, the cooling load may be first on the actively cooled first surface. At least part of the cooling load can be absorbed by the actively cooled first surface. The absorbed portion of the cooling load may be referred to as "heat" as described herein. By using a heat exchanger, the "heat" can then be transferred away from the first surface, e.g. towards the second surface.

In the present disclosure, the terms "heat," "cooling load," and "cooling capacity" may be expressed in terms of known thermodynamic quantities, such as energy and/or flux, or any other quantity relevant to the art.

According to embodiments of the present disclosure, a cold surface is added. This cold surface corresponds for example to the first surface 111 in fig. 1. For example, the cold surface may be at a temperature of-20 ℃ or less, such as-90 ℃ or less, such as-100 ℃. For example, the temperature may be from-20 ℃ to-200 ℃. The temperature of the first surface may affect the area of the first surface and vice versa. According to some embodiments, which can be combined with embodiments described herein, the surface area of the first surface and the temperature of the first surface (during operation) can be inversely proportional. According to some embodiments, which can be combined with other embodiments described herein, the cooling system 100 can include a cryocompressor (cryocompressor) and/or a Peltier element (Peltier element). For example, media for a cryogenic compressor may be fed through a media arm (media arm) in a vacuum processing system, such as a media arm at atmospheric pressure. For example, the peltier element may be arranged on a cooled surface.

Embodiments of the present disclosure allow for the complete utilization of a heat spreader to compensate for thermal loads on the mask and substrate, for example at-100 ℃.

FIG. 1 shows a cross-sectional schematic view of a cooling system disposed in a vacuum chamber for cooling a deposition area according to embodiments described herein. As exemplarily shown in fig. 1, a cooling system 100 is provided in a vacuum chamber 10 including a deposition area 11, and the cooling system 100 includes an active cooling device 110 having a first surface 111 and a second surface 112. Furthermore, the first surface 111 is arranged between the second surface 112 and the deposition area 11. In addition, the cooling system 100 includes a heat exchanger 113, the heat exchanger 113 configured to actively cool the first surface 111 by transferring heat away from the first surface 111.

In the present disclosure, the vacuum chamber 10 may be connected to one or more vacuum pumps to create a technical vacuum. In particular, a vacuum chamber 10 as described herein may be understood as a chamber that may be evacuated to a pressure below atmospheric pressure, such as 10 millibar (mbar) or less, in particular 1 mbar or less.

In the present disclosure, the deposition area 11 may be understood to refer to an area in the vacuum chamber 10 where at least partial deposition of material may occur. In particular, the deposition area as referred to herein may refer to an area where at least one of a substrate and a mask may be disposed for material deposition. The deposition area may be static or dynamic. In particular, the deposition area may advantageously be static, thereby advantageously improving the alignment of the mask and the substrate.

According to embodiments, which can be combined with embodiments described herein, the vacuum chamber 10 can include one or more deposition zones.

In the present disclosure, an "active cooling device" may be defined as a system comprising a first surface and a second surface as defined herein, in particular a system comprising a first surface arranged between a deposition area and a second surface. More particularly, the active cooling device according to embodiments described herein may be an arrangement of two plates (e.g., two glass plates), a first surface corresponding to a first glass plate and a second surface corresponding to a second glass plate.

In the present disclosure, by "first surface" it is meant any surface made of at least one material having a high emissivity, in particular showing an emissivity greater than 0.5, more in particular greater than 0.6, in particular in the range of 0.7 to 1.

Further, a "first surface" may be defined as any surface suitable for cooling at a temperature T1, which is below-20 ℃, in particular in the range of-20 ℃ to-200 ℃, more in particular substantially about-100 ℃.

In the following, the terms "first surface" and "actively cooled first surface" are used interchangeably, since they have the same technical meaning, in particular in terms of structure and/or function.

In the present disclosure, "second surface" may be defined as any surface suitable for heating at a temperature T2, described herein, higher than the temperature T1 of the first surface. In particular, the second surface may be heated to a temperature above 40 ℃, in particular above 50 ℃, more in particular in the range of 40 ℃ to 80 ℃.

In some embodiments, the heat exchanger may be further defined as any device configured to cool the first surface to a temperature T1 within the temperature range defined herein and/or to heat the second surface to a temperature T2 within the temperature range defined herein.

In embodiments that may be combined with the embodiments described herein, a heat exchanger may be further defined as any device, i.e. any device adapted to be configured to actively cool a first surface by transferring heat from the first surface to a second surface.

According to embodiments that may be combined with embodiments described herein, the heat exchanger may be selected from the group consisting of: cryocoolers (cryocoolers), freezers (refrigerators), and thermoelectric devices (e.g., peltier elements).

Fig. 2 shows a schematic top view of the cooling system according to fig. 1, further depicting the heat transferred from the first surface 111 to the second surface 112 as indicated by arrow 1. Heat may be transferred away from the first surface 111 by the heat exchanger 113. In particular, the heat exchanger 113 may be configured to actively cool the first surface 111 by transferring heat from the first surface 111 to the second surface 112.

As exemplarily shown in fig. 2, the temperature T1 may be higher than the temperature T2. A temperature gradient Δ TH (° c) may be imparted between the first surface 111 and the second surface 112. The temperature gradient Δ TH may be actively imparted by the heat exchanger 113. Accordingly, the heat exchanger 113 may be sandwiched between the first surface 111 and the second surface 112 and may particularly transfer heat from the first surface 111 to the second surface 112, at least by conduction. In other words, the heat exchanger 113 may be configured to provide the following relationship: t2> T1.

In an embodiment, the temperature gradient Δ TH may be generated by a combination of a "natural" temperature difference between T1 and T2, and active work or active energy applied between the first surface 111 and the second surface 112, thereby further increasing the temperature difference between the temperature T1 and the temperature T2.

Fig. 3A shows a schematic top view of the cooling system, for example according to fig. 1, further illustrating an actively cooled first surface 111, which first surface 111 is configured to transfer at least part of the cooling load CL away from the deposition area 11. The transfer of the cooling load CL may be from the deposition area 11 towards the first surface 111, as indicated by arrow 2.

According to embodiments described herein, which can be combined with other embodiments, the first surface can be cooled to a temperature below room temperature, for example below-20 ℃.

The first surface 111 may be cooled by a heat exchanger 113, as defined herein. By cooling the first surface 111, a temperature gradient Δ TD (° c) may be imparted between the deposition area 11 having a temperature TD (particularly the mask temperature) and the first surface 111 having a temperature T1.

In the present disclosure, "temperature TD" may be understood to mean the temperature of the deposition area, in particular the temperature of the mask, more particularly the real-time temperature of the mask. The temperature TD may fluctuate over time, and may rise, in particular, when the deposition area (in particular the mask and/or the substrate) is subjected to deposition of a material.

Further, "temperature TDa" may be understood to mean the average temperature of at least one of the deposition area, the substrate and the mask, in particular the average temperature of the deposition area before deposition of the material may take place, more in particular the average temperature of the deposition area before the deposition area is subjected to thermal radiation emitted by the deposition source. In addition, the average temperature TDa may be lower than 35 ℃ and/or higher than 20 ℃, in particular may be in the range between 23 ℃ and 30 ℃.

In embodiments that may be combined with the embodiments described herein, the heat exchanger 113 may be configured to cool the first surface 111 to a temperature T1, which temperature T1 is below-30 ℃, particularly in the range of-30 ℃ to-200 ℃, more particularly substantially about-100 ℃.

For example, the temperature TDa of the deposition area may be further defined as an average temperature of different temperature values of TD taken over time.

As exemplarily shown in fig. 3A, the transfer 2 of the cooling load CL occurs because of the temperature gradient Δ TD (° c), in particular because of thermal radiation.

By providing a cooling system as described herein, the cooling load may be at least partially reduced and the quality of the pixel accuracy may be advantageously improved. According to the embodiments described herein, the evaporation source evaporation is, for example, an organic material, irrespective of the quality of the cooling or thermal shielding of the source, which evaporation source provides at least a small thermal load to the substrate and/or to the mask shielding the substrate. Accordingly, the mask and/or the substrate may experience a temperature increase, for example a temperature increase of 5 ℃ or less. For oled (rgb) displays to provide shielding accuracy, this shielding requires pixel accuracy, i.e. accuracy in the micrometer range. This has a 1m for the treatment²Or larger size large area substrates are extremely challenging. This is even more challenging for substantially vertically oriented substrates where gravity affects the accuracy of the shielding. Accordingly, embodiments provide a cooling system for reducing a rise in temperature on a substrate and/or a mask. The cooling system comprises an active cooling surface, such as the first surface 111 as described in fig. 3A, the first surface 111 being cooled to a temperature below-30 ℃. The active cooling surface may be along the substrate and/orThe mask is moved to reduce the thermal energy provided by the evaporation.

FIG. 3B illustrates a schematic top view of the cooling system of FIG. 3A depicting an actively cooled first surface 111 that may have a high emissivity according to embodiments described herein. As exemplarily shown in fig. 3B, the first surface 111 may be made of a material having a high emissivity, such as a high emissivity ceramic. In particular, the first surface 111 may have an emissivity greater than 0.5, more particularly greater than 0.6, in particular in the range 0.8 to 1.

By providing a first surface with a high emissivity as defined herein, the cooling load CL can be better reduced at the deposition area, thereby advantageously increasing the pixel accuracy and the manufacturing of the OLED display.

Subsequently, the amount of the cooling load CL absorbed by the first surface 111 (i.e., "heat" as defined above) may be further transferred to the second surface 112, as exemplarily shown in fig. 2.

In some embodiments, the actively-cooled first surface 111 may be configured to transfer the cooling load completely away from the deposition area 11, particularly from the mask.

In embodiments that may be combined with embodiments described herein, the cooling system may comprise at least one or more active cooling devices and one or more heat exchangers, in particular one or more active cooling devices and one or more heat exchangers as described herein.

According to embodiments, which can be combined with embodiments described herein, the cooling system may further comprise at least one support configured to move the active cooling device along the deposition area.

FIG. 4 illustrates a schematic top view of a cooling system further including a support according to embodiments described herein. As exemplarily shown in fig. 4, the cooling system 200 may include the active cooling device 110 (exemplarily shown in fig. 1-3B) and one support 201. The support 201 may be configured to move the active cooling system 110 along the deposition area 11.

By providing the support 201 in the cooling system 200, the cooling system 200 may be moved along the deposition area 11. The deposition area 11 may be maintained static and pixel accuracy may be advantageously improved.

As exemplarily shown in fig. 4A, the support 201 may be configured to move in a first direction D1 along the deposition area. In particular, the support may be configured to move in a first orientation along the first direction D1, and/or in a second orientation along the first direction D1, in particular in a second orientation opposite to the first orientation of D1, more in particular the support may move back and forth along the direction D1. Hereby, the second orientation may be provided by moving the cooling device by an angle of approximately 180 °. This can be used to lower the temperature of the second substrate or the second mask on the opposite side of the vacuum chamber.

As shown in fig. 4B, the support 201 may be configured to move in a second direction D2 different from the first direction D1, in particular in a second direction substantially orthogonal to the first direction D1. The second direction D2 may in particular have a curved trajectory extending from the first direction to the third direction. In addition, the support 201 may be configured to move along the third direction D3 as described herein, particularly along the third direction D3 within the vacuum chamber substantially parallel to the first direction D1. The third direction D3 may extend along other deposition regions within the vacuum chamber, particularly other deposition regions arranged in parallel with the deposition regions described above. Further, the support 201 may be configured to return from the third direction D3 to the first direction D1 along a fourth direction D4, in particular, the fourth direction D4 may be symmetrical to the second direction D2 with respect to an axis perpendicular to the first direction D1 and the third direction D4. According to embodiments that may be combined with embodiments described herein, the first direction D1, the second direction D2, the third direction D3, and the fourth direction D4 may refer to the circular track 202.

In embodiments that may be combined with the embodiments described herein, the support may be movable along direction D1, for example, may have translational movement along direction D1. The support may move back and forth along direction D1. Furthermore, the cooling system may be rotated by an angle of about 180 ° with respect to a rotation axis, which is, for example, orthogonal with respect to the support. This may serve to lower the temperature of the second substrate or the second mask on the opposite side of the vacuum chamber.

According to some embodiments, the cooling system may be connectable to at least one support (as shown in fig. 5A). The cooling system may be connected to the at least one support. As described herein, at least one support may be provided within the vacuum chamber.

Fig. 5A shows a schematic top view of an arrangement for material deposition on a substrate according to embodiments described herein. Arrangement 300 includes a deposition source 301 for performing material deposition on a substrate 302 in a deposition region 303. The cooling system 304 comprises an active cooling device 305, the active cooling device 305 having an actively cooled first surface 306 configured to transfer at least part of the cooling load CL away from the deposition area 303, in particular away from the mask, and a support 307 for supporting the deposition source 301 and the cooling system 304, and the support 307 being configured to move the deposition source 301 and the cooling system 304 along the deposition area 303. In addition, the arrangement 300 may include an alignment unit 312 (e.g., an alignment device) and a controller that monitors the alignment device, which is used to align the substrate 302 relative to the mask.

Further, the deposition source 301 may refer to an evaporation source. As exemplarily shown in fig. 5A, the deposition source 301 may refer to an evaporation source including one evaporation crucible and one distribution pipe. The distribution pipe may be provided with a plurality of outlets, in particular along the length of the distribution pipe. The deposition source may be adapted, i.e. configured, to deposit a single material.

As exemplarily shown in fig. 5A, the deposition source 301 may refer to an evaporation source array including two or more evaporation crucibles and two or more distribution pipes (not shown), wherein the two or more evaporation crucibles may be configured to evaporate two or more materials, such as organic materials. Further, the two or more distribution tubes may be provided with outlets (not shown) along the length of the two or more distribution tubes, wherein a first distribution tube of the two or more distribution tubes may be fluidly connected with a first evaporation crucible of the two or more evaporation crucibles. Such "deposition sources" may be particularly suitable, i.e., configured, for depositing two or more materials on a substrate.

As exemplarily shown in fig. 5A, the support 307 may be configured to move along the track 308. Deposition source 301 and cooling system 304 may be moved back and forth along a first direction D1, as indicated by arrow 392. Further, the deposition source 301 and the cooling system 304 may be moved through an angle, such as 180, to process a second substrate, as indicated by arrow 394. The second substrate may be opposite to the first substrate. Having the cooling system 304 on the same support 307 as the deposition source 301 allows for the cooling load CL to be transferred immediately after the thermal load is transferred into the deposition region 303 by the deposition source 301.

In embodiments that may be combined with the embodiments described herein, the support 307 may be moved back and forth along direction D1, and/or the deposition source and cooling system may be rotated about an axis through an angle of approximately 180 °. Accordingly, the deposition source and the cooling system, such as the outlet of the deposition source, may define an annular orbit (not shown in FIG. 5A) around the direction D1.

Furthermore, the deposition area 303 exemplarily shown in fig. 5A may comprise a substrate arrangement comprising a substrate carrier 310 holding the substrate 302. Further, the deposition area 303 may comprise a mask arrangement comprising a mask carrier 312 holding a mask 313. As illustrated in fig. 5A, a mask arrangement, in particular a mask 313, may be arranged between the substrate arrangement, in particular the substrate 302, and the cooling system 304.

The actively cooled first surface 306 may be cooled at a temperature T1 to impart a temperature TD relative to the deposition region 303, in particular a temperature gradient Δ TD relative to the mask temperature. At least part of the cooling load CL may be absorbed by the actively cooled first surface 306 and subsequently transferred away from the deposition region 303, in particular from the mask arrangement 311.

As mentioned above, the actively cooled first surface 306 may be made of a high emissivity material, such as a high emissivity ceramic, in particular an emissivity as defined herein, which may increase the amount of cooling load CL absorbed and may advantageously improve pixel accuracy in OLED display manufacturing.

In embodiments that may be combined with the embodiments described herein, the cooling system 304 as exemplarily shown in fig. 5A may be any cooling system corresponding to the present disclosure, in particular the cooling systems as depicted in fig. 1 to 4.

In embodiments, which may be combined with other embodiments described herein, cooling system 304 may be configured such that actively cooled first surface 306 may transfer the cooling load away at deposition region 303, for example, as support 307 moves along direction D1. Alternatively or additionally, the cooling system 304 may be arranged such that, for example, when the support is moved along direction D1, the actively-cooled first surface 306 may perform at least one of transferring the cooling load away from the deposition area 314, and cooling the deposition area 314, the deposition area 314 being arranged parallel to the fourth direction D4.

According to some embodiments of the present disclosure, a processing system is described having vacuum chambers or deposition apparatuses, respectively, arranged in a cluster-type arrangement. This may be particularly beneficial for RGB OLED manufacturing processes where the substrate and shadow mask are fixed, for example for pixel accuracy purposes. Embodiments of the present disclosure may also be applicable to white OLED applications. For example, applications of white OLEDs may be used for lighting applications, as well as applications that use the light of the OLEDs as backlight for televisions. Such applications may have edge exclusion masks or mask separation devices (rather than shadow masks) fabricated on large area substrates. However, in view of the increased deposition rate, the thermal load provided to the substrate and/or the mask also increases. For example, high throughput of substrates in the system may result in an increase in enthalpy of evaporation. Further, idle time during which the substrate is not processed and is transported, for example, in the system, is reduced. In view of this, heating of the substrate and/or heating of the mask may be significant. Thus, in accordance with embodiments described herein, an inline deposition system may be advantageously utilized to remove cooling loads from the substrate and/or mask.

Fig. 5B illustrates a processing system 500. Two or more deposition apparatuses 510 are disposed in line. For example, the two or more deposition apparatuses may be provided adjacent to each other. The deposition apparatus 510 may include a vacuum chamber 10. One or more deposition sources 301 can be included in the vacuum chamber 10. For example, each deposition source in adjacent deposition apparatuses may provide one layer of a layer stack of organic materials. According to an embodiment, as exemplarily shown in fig. 5B, the deposition source 301 or sources may be static within the vacuum chamber or chambers. The substrate 302 may be transferred or transported along a transport track 575, such as with a mask 313, by the processing system 500.

According to embodiments described herein, an active cooling device having a first surface 306 may be provided in the vacuum chamber 10. For example, one or more active cooling devices may be provided alongside the deposition source 301. Accordingly, the thermal load provided to the substrate and/or mask may be removed from the substrate and/or mask by one or more active cooling devices during movement of the substrate and/or mask through the deposition source. Accordingly, a cooling system for cooling the deposition area disposed in the vacuum chamber may be provided. The cooling system includes an active cooling device including a first surface and a second surface; the first surface is disposed between the second surface and the deposition area, and a heat exchanger is configured to actively cool the first surface by transferring heat away from the first surface. According to yet further embodiments, which can be combined with other embodiments described herein, other modifications, features, details, and aspects of the cooling system and/or the active cooling device can be used in an inline deposition system as exemplarily shown in fig. 5B. However, in contrast to active cooling devices for RGB OLED applications, active cooling devices for in-line systems may be static, where the substrate and mask are static. The cooling system with the active cooling device has a first surface, which cooling system can counteract the increased heat load transferred from the source to the substrate and/or the mask, in particular in a short time, due to high-volume manufacturing.

Fig. 6 shows an arrangement for material deposition on a substrate, for example, an arrangement with a static substrate mask, according to embodiments described herein. The arrangement 400 comprises a deposition source 401 for material deposition on a substrate 402 of a deposition area 413, a cooling system 414 of a first active cooling device 415 having an actively cooled first surface 416, and a heat exchanger 417 configured to transfer heat away from the actively cooled first surface 416, the actively cooled first surface 416 being configured to transfer a cooling load away from the deposition area 413, in particular away from the mask, and a cooling arrangement 417 having a second active cooling device 418 being configured to reduce thermal radiation from the deposition source 401.

In the present disclosure, a "cooling arrangement" may be defined as being adapted, i.e. configured to reduce thermal radiation from the deposition source, in particular emitted from the deposition source towards the deposition area, more in particular emitted towards the mask and/or the substrate. In other words, the cooling arrangement may be defined as a "cooling shield arrangement" which protects the deposition area, in particular the substrate and/or the mask, from thermal radiation emitted by the deposition source.

Furthermore, a "cooling arrangement" according to the present disclosure may be further defined as comprising a second active cooling device, which may be activated by a cooling medium. For example, the second active cooling device may refer to a double wall, wherein a cooling medium (e.g., cooling water) may flow between the two layers to cool the second active cooling device.

As exemplarily shown in fig. 6, the deposition source 401 may refer to two or more evaporators, that is, two or more evaporation crucibles (not shown). Further, the two or more evaporation crucibles may include two or more distribution pipes 4012. Two or more distribution conduits 4012 as depicted in fig. 6 may advantageously have a triangular shape in order to be arranged adjacent to each other in an efficient manner. The deposition efficiency of these two or more materials can be advantageously improved.

In some embodiments, the two or more distribution conduits 4012 may have any other shape, for example, a cylindrical shape, allowing for the deposition of two or more materials, particularly the simultaneous deposition of two or more materials.

Further, two or more of the distribution conduits 4012 can be heated by one or more heating elements 450. One or more heating elements 450 may be provided at the outer wall of one or more of the distribution conduits 4012. The one or more heating elements 450 may correspond to electric heaters mounted on the walls of two or more distribution conduits 4012. For example, the one or more heating elements 450 may be provided by a heating wire (e.g., a coated heating wire) that is clamped or otherwise secured to the two or more distribution tubes 4012.

Further, the two or more distribution conduits 4012 may have one or more outlets 4013, the one or more outlets 4013 being provided along the length of the two or more distribution conduits 4012, wherein a first distribution conduit of the two or more distribution conduits 4012 may be in fluid connection with a first evaporation crucible (not shown) of the two or more evaporation crucibles (not shown).

The one or more outlets 4013 of the two or more distribution conduits 4012 may be one or more openings or one or more nozzles, which may be provided, for example, in a showerhead or in another vapor distribution system. The deposition source 401 may include a vapor distribution showerhead, such as a linear vapor distribution head having a plurality of nozzles or openings. A spray head may here be understood to comprise a housing with an opening such that the pressure in the spray head is higher than the pressure outside the spray head, for example by at least an order of magnitude.

As exemplarily shown in fig. 6, the second active cooling device 418 may be disposed on at least one side of two or more distribution conduits 4012, which may be the side provided to one or more outlets 4013.

Further, the second active cooling device 418 may include or may be provided with one or more shaped shields. As exemplarily shown in fig. 6, two shaped shields 4181 may be provided to the second active cooling device 418, the shaped shields 4181 in particular being attached to the second active cooling device 418. The shaped shield 4181 may extend from a portion of the deposition source toward the deposition region 413. Two shaped shields 4181 and a second active cooling device 418 may be arranged to provide a U-shaped cooled thermal shield to reduce thermal radiation towards the deposition area (i.e., substrate and/or mask).

As exemplarily shown in fig. 6,

arrows

3, 4 and 5 respectively depict vaporized organic material exiting from two or more distribution tubes 4012. Due to the substantially triangular shape of the distribution tubes 4012, evaporation cones from two or more distribution tubes 4012 may be in close proximity to each other, such that mixing of organic material from two or more distribution tubes 4012 may be improved.

Accordingly, the direction of the evaporated material existing in the first distributor tube or the two or more distributor tubes 4012 through the outlets 4013 can be controlled, that is, the emission angle of the vapor can be advantageously reduced.

Furthermore, the shaped shield 418 may be configured to limit a distribution cone of organic material distributed towards the deposition region 413 (e.g., substrate), that is, the shaped shield 4181 may be made to block at least a portion of the organic material. The width of the emission angle can be advantageously controlled.

In addition, the shaped shield 418 may be cooled to further reduce thermal radiation emitted toward the deposition region 413, i.e., to reduce thermal radiation emitted from the deposition source 401 toward the deposition region 413. Further, the second active cooling device 418 may be activated by a cooling medium 419 selected from the group consisting of: water, oil and ethylene glycol. The cooling medium 419 may be provided at or in the second active cooling device 418 and may be adapted, i.e. adapted, to actively cool the second active cooling device 418.

As exemplarily shown in fig. 6, the actively cooled first surface 416 may be arranged between the deposition area 413, in particular the mask and/or the substrate, and the cooling arrangement 417, in particular the second active cooling means 418.

In embodiments that may be combined with embodiments described herein, the cooling system 414 may be disposed between the cooling arrangement 417 and the deposition area 413. By providing the arrangement 400 with a configuration as described herein, at least part of the cooling load CL can be reduced, and the pixel accuracy can be further improved, and in particular the manufacturing of the OLED display can be advantageously improved.

The cooling system 414, the actively-cooled first surface 416, and the heat exchanger 417, as exemplarily shown in fig. 6, may independently serve as a cooling system, as exemplarily shown in fig. 1-4 above. In particular, cooling system 414 may be a cooling system corresponding to, and in particular as described herein, particularly in view of fig. 1-4.

Furthermore, the arrangement 400 may comprise one or more heat shields 419, in particular two or more heat shields, for example five or more heat shield layers, for example ten heat shield layers, surrounding at least the first distribution pipe as described herein. The two or more thermal shields 420 may be configured to reflect heat back to the center of the first distribution pipe and advantageously reduce heat loss to the environment. Further, two or more heat shields 419 may be arranged at one side of the one or more outlets 4013 and may be provided with openings 4191 at the location of the one or more outlets 4013 of the two or more distribution conduits 4012.

Further, an evaporator control housing (not shown) may be provided adjacent to two or more distribution pipes and connected by a thermal insulator (not shown). As described above, the evaporator control housing adapted to maintain an atmospheric pressure therein may be configured to house at least one element selected from the group consisting of: a switch, a valve, a controller, a cooling unit, a cooling control unit, a heating control unit, a power supply and a measuring device.

Fig. 7 shows an arrangement for material deposition on a substrate according to the embodiment of fig. 6, fig. 6 in particular depicting heat transfer that may occur during operation. As exemplarily shown in fig. 7, the arrows 6 depict the thermal radiation emitted from the deposition source 401, in particular from the two or more distribution tubes 4012. The two or more thermal shields 420 may be, adapted to, i.e. configured to reflect at least part of the thermal radiation, in particular towards the center of the deposition source 401, more in particular towards the center of each of the two or more distribution conduits 4012.

Further, portions of the thermal radiation that are not reflected by the two or more thermal shields 420 may be at least partially collected by the cooling arrangement 417. In particular, at least a portion of the unreflected thermal radiation may be collected in the second active cooling device 418. The second active cooling device 418 may be actively cooled by a cooling medium 419, such as cooling water. It is advantageously possible to reduce the heat radiation that is not reflected, in particular towards the deposition area 413, more in particular towards the mask and/or the substrate.

In the present disclosure, the term "non-reflected thermal radiation" may be understood to refer to thermal radiation that is transferred to portions outside the deposition source 401, in particular to portions outside the two or more distribution conduits 4012.

As exemplarily shown in fig. 6 and 7,

arrows

3, 4, 5 depict the transport of vaporized organic material from two or more distribution conduits 4012 through an outlet 4013 towards the deposition region 413. As described above, the U-shaped cooling thermal shield provided by the two thermal shields 4181 and the second active cooling device 418 may define a distribution cone of organic material distributed toward the deposition region 413. Furthermore, the U-shaped cooling thermal shield may be configured to be cooled by the cooling medium 419 and advantageously reduce thermal radiation towards the deposition area 413.

The transport of evaporated organic material to be deposited on the substrate in the deposition area may give a thermal load, in particular due to thermal radiation carried by the evaporated organic material. The deposition areas, such as the substrate and the mask, can be subjected to the thermal loads defined herein, particularly if they are adversely affected and damaged.

The heat load as described herein may refer to the cooling load as defined above. In the present disclosure, the terms "cooling load" and "heat load" may be used interchangeably, as both have the same meaning, i.e. both have the same meaning in the art.

In view of this, by providing an arrangement 400 with a cooling system 414 as described herein, which arrangement 400 comprises in particular a first active cooling device 415 with an actively cooled first surface 416, and a heat exchanger 417 configured to transfer heat away from the actively cooled first surface 416, the actively cooled first surface 416 being configured to transfer a cooling load CL away from the deposition area 413, in particular away from the mask, the negatively affected heat load may be further reduced. The arrangement 400 may advantageously improve pixel accuracy in OLED display manufacturing.

In particular, cooling system 414 may be used as the cooling system described herein, and in particular, cooling system 414 may correspond to a cooling system according to an embodiment as depicted in fig. 1-4.

The actively-cooled first surface 416 may be disposed between a second active cooling device 418 and the deposition region 413, as shown in fig. 7. As indicated by the arrow 2 in fig. 3A and 7, heat transfer, i.e. the transfer 2 of the cooling load CL, can take place from the deposition area to the cooling system. As shown in fig. 7, the transfer 2 of the cooling load CL may occur from the deposition area 413 (particularly the position of the mask and/or the substrate) towards the actively cooled first surface 416.

The heat transfer may be caused by a temperature gradient, i.e. a temperature gradient Δ TD (° c) as defined herein, in particular due to a temperature difference between the temperature TD of the deposition region 413, in particular the temperature of the mask, and the actively cooled first surface 416 has a temperature T1. The substrate and/or mask in the deposition region 413 may be less affected by thermal loading as described herein, particularly from thermal radiation emitted by the deposition source 401.

In view of this, by providing the cooling system 414 between the deposition area 413 and the cooling arrangement 417, the cooling load CL can be further reduced, and the pixel accuracy in the OLED display manufacturing can be advantageously improved.

Fig. 8 shows an arrangement according to the embodiment of fig. 7, the cooling system 414 further comprising a third active cooling device 460. As exemplarily shown in fig. 8, the first active cooling device 415 and the third active cooling device 460 may be arranged on both sides with respect to the position of the one or more outlets 4013, in particular symmetrically with respect to the axial spray head comprising the one or more outlets 4013.

With the above configuration, at least one of the first active cooling device 414 and the third cooling device 415 may be configured to cool the deposition area 413 before material deposition may occur. The thermal load subsequently emitted by thermal radiation during deposition can be compensated in advance. Furthermore, at least one of the first active cooling device 414 and the third active cooling device 460 may be configured to further cool the deposition area 413 after material deposition may occur. The heat load emitted by the thermal radiation during material deposition may at least be reduced and preferably transferred completely away from the deposition area 413. By providing the third active cooling device 460 as described herein, the cooling load CL transferred away from the deposition area 413 may be increased and the pixel accuracy in OLED display manufacturing may be further improved.

In embodiments that may be combined with other embodiments described herein, the first and third active cooling devices may be identical in structure and function. In particular, at least one of the first active cooling device and the third active cooling device may correspond to the cooling system as illustrated in fig. 1-4 and described herein.

Alternatively, the first active cooling device and the third active cooling device may be different from each other, in particular in structure, heat transfer capacity, and function according to the requirements of the material deposition arrangement that may be provided beforehand.

Fig. 9 shows an arrangement according to the embodiment of fig. 8, the cooling system 414 may further comprise a fourth active cooling device 470. Additionally, the arrangement 400 may further comprise a support 307 as shown in fig. 6. As exemplarily shown in fig. 8, a fourth active cooling device 470 may be disposed behind the deposition source 401. In the present disclosure, the term "behind" may refer to a side of the deposition source opposite to a side where one or more outlets 4013 may be disposed. The "rear" side of the deposition source 401 may be further defined as the side without the outlet and opposite the side with the outlet or outlets. According to embodiments, which can be combined with other embodiments described herein, a cold surface can be provided on the front side and/or the back side of the deposition source 401.

As shown in fig. 9, the fourth active cooling device 470 may have a length substantially about the length of the deposition source 401. Alternatively, the fourth active cooling device may comprise one or more active cooling devices, in particular active cooling devices as described herein.

Further, the support 307 may be adapted, i.e. configured to support and move the deposition source 401, the cooling arrangement 417, and the cooling system 414, respectively.

With the above configuration, when the support 307 moves along the endless track 308, the fourth active cooling device may be configured to at least one of: the deposition zone is cooled and the cooling load CL is transferred away from the deposition zone, in particular another deposition zone arranged on the opposite side of the deposition zone subjected to the material deposition. For example, during material deposition in deposition area 413, when support 307 moves along endless track 308 along direction D1, the fourth active cooling device may be configured to cool deposition area 480 and/or transfer cooling loads away from deposition area 480. In another example, the fourth active cooling device may be configured to transfer the cooling load CL away from the deposition area 413 when the support 307 moves along the endless track 308 in the direction D4 during material deposition in the deposition area 480.

In embodiments that may be combined with other embodiments described herein, the vacuum chamber may include only one deposition area. The fourth active cooling device as described herein may advantageously increase heat transfer towards the rear of the deposition source and reduce heat radiation towards the deposition area.

By providing the fourth active cooling device 470, the cooling load at the deposition area may be further reduced, and the pixel accuracy in the manufacture of the OLED display may be further improved.

According to yet another aspect of the present disclosure, a method of material deposition on a substrate in a deposition area is provided. A method of material deposition on a substrate in a deposition area, comprising at least one of: maintaining a temperature gradient Δ TD over time between a deposition area provided with the substrate and a first surface of the cooling system; and maintaining the average temperature TD of the deposition area (in particular the mask) substantially constant over time; the cooling load CL is transferred away from the deposition area, in particular from the mask, by means of a cooling system.

Hereinafter, the term "first surface of the cooling system" may be understood to refer to at least one of "first surface" and "actively cooled first surface" as described herein. Further, the "first surface" may be an "actively cooled first surface" as described herein, particularly as described in the embodiments of fig. 1-9.

As already described in the embodiment with reference to fig. 3A, the maintenance of the temperature gradient Δ TD over time may be achieved by using a first surface which is, for example, actively cooled.

The method may comprise providing at least one of a temperature gradient Δ T of 40 ℃ or more, particularly 120 ℃ or more, more particularly 220 ℃ to 500 ℃, and may provide an average temperature of the substrate and/or the mask of 23 ℃ to 30 ℃.

By providing a temperature gradient Δ TD over time, the cooling load CL as described herein may be at least reduced over time, preferably substantially completely transferred away from the deposition area, and pixel accuracy in OLED display manufacturing may be improved.

According to yet another aspect of the present disclosure, a method of material deposition on a substrate in a deposition area is provided. FIG. 10 illustrates deposition of a material on a substrate in a deposition area according to embodiments described hereinA flow chart of method 600. The method 600 comprises: in a first time period t_xDuring which the deposition source is moved 601 along the substrate; in a first time period t_xWithin a second time period t_yDuring which the substrate is cooled 602; and during a first time period t_xWithin a third time period t_zDuring which material is deposited 603 on the substrate for a third time period t_zDuring this time, the deposition area temperature TD, in particular the substrate and/or the mask temperature, is increased.

The method 600 according to embodiments described herein may be performed in a vacuum chamber as described above and may include at least one of: the movement 601 may be achieved using a support as described above; cooling 602 may be performed using actively cooled first surfaces, cooling systems, and arrangements described herein, particularly with reference to the embodiments of fig. 1-9; deposition 603 may be performed by using a deposition source as described herein.

In the present disclosure, the "first time period t_x"may be understood to mean the time period during which the deposition source moves 601, in particular along one or more deposition areas within the vacuum chamber, more in particular along an endless track as described herein.

Further, the "second period t_y"can be understood as the period of time during which cooling is possible, the second period of time t_yIs in a first time period t_xAnd (4) the following steps. In other words, the second time period may be less than or equal to the first time period t_x. Additionally or alternatively, the second time period t_yThe cooling 602 during may be performed by at least one of an actively cooled first surface, a cooling system, and an arrangement as described herein. A second time period t_yMay refer to a period of time during which at least one of the actively-cooled first surface, the cooling system, and the arrangement may be operated.

In the present disclosure, the "third time period t_z"may be understood to mean the time period during which material deposition may take place, the third time period t_zIn a first time period t_xAnd (4) the following steps. In other words,a third time period t_zMay be less than or equal to the first time period t_x. Additionally or alternatively, the third time period t may be performed by at least one of the deposition sources and arrangements described herein_zDuring deposition 603. A third time period t_zMay refer to a time period during which at least one of the deposition source and the arrangement may be operated.

In particular, the method 600 may include cooling 602 and depositing 603 in its sequence. The deposition source may be at a first time period t_xIs moved. At a second time period t_yDuring (b), the deposition area may first be cooled, in particular the substrate and/or the mask, in particular by at least one of the actively cooled first surface, the cooling system, and the arrangement as described herein. The deposition area may advantageously be cooled so as to at least partially compensate for the third time period t in the up front (up front)_zThe subsequent cooling load CL given during the material deposition in the chamber.

In particular, the method 600 comprising cooling 602 and deposition 603 may advantageously be operated in this order by an arrangement as described herein, in particular an arrangement with a first active cooling device configured "up front" of one or more outlets of the deposition source as described above with respect to at least one direction D1. Hereinafter, the term "upstream" is understood to mean "downstream" of the outlet or outlets with respect to at least one direction D1. In other words, the first active cooling device may be disposed between the one or more outlets and the forward position along the at least one direction D1.

In some embodiments, deposition 603 may occur before cooling 602. May be in the second time period t_yThe deposition area, in particular the substrate and/or the mask, is first heated during the deposition of the material therein. Since the deposition source emits thermal radiation toward the deposition region, a cooling load CL can be given. Subsequently, a third time period t may be provided_zCooling takes place therein, during which the cooling load CL can be at least partially transferred away from the deposition area. The cooling load CL at the deposition area can be at least reduced and the pixels in the manufacture of OLED displays can be further improvedAnd (4) precision.

In particular, the method 600 comprising deposition 603 and cooling 602 may be operated in this order by an arrangement as described herein, in particular an arrangement with a first active cooling device configured "behind" one or more outlets of the deposition source with respect to at least one direction D1. Hereinafter, the term "rear" may be understood to mean "upstream" of the outlet or outlets with respect to at least one direction D1. In other words, the first active cooling device may be disposed between the one or more outlets and the rearward position along the at least one direction D1.

Fig. 11 shows a schematic of temperature fluctuations at the deposition area (in particular at the mask and/or the substrate) over time. The temperature at the deposition area may fluctuate over time, and in particular may fluctuate around an average constant temperature TDa as shown by the horizontal dashed line in fig. 11. The temperature TDa may advantageously be a predetermined temperature, for example about 25 ℃. The tolerance or variation of the predetermined temperature may be +/-1 deg.c, for example.

A cooling system as described herein may be provided, the cooling system having an actively cooled first surface and being configured to maintain the TD constant at about substantially the temperature TDa over time. For example, during material deposition, when the deposition area is heated, the actively-cooled first surface may at least one of cool the deposition area and transfer at least a portion of the cooling load away from the deposition area. In other words, the deposition area may be the first surface that is actively cooled by the cooling system, in particular, forced back to the average constant temperature TDa as described herein.

As exemplarily shown in fig. 11, the heated surface area imparted by, for example, thermal radiation of the deposition source during material deposition may be represented by surface area 501 (see fig. 10). Further, the cooling surface area, which is for example given by the cooling of the cooling system, in particular the actively cooled first surface, may be represented by surface area 502.

In some embodiments, surface area 502 may be substantially equal to surface area 501. The cooling load CL may be transferred substantially completely away from the deposition area. In embodiments that may be combined with embodiments described herein, surface area 502 may be equal to 90% to 110% of surface area 501.

According to embodiments described herein, the thermal load transferred to the mask and/or the substrate may be removed as a cooling load by, for example, the first surface being an active cooling device. It is advantageous to remove all of the heat load as a cooling load to have a stable temperature (e.g., in the range of ± 1 ℃). As described above, the cooling load may be affected by the temperature of the first surface and the area of the first surface. For example, the area of the first surface of the active cooling device, or the sum of the areas of the cooling surfaces (e.g., the first surfaces), may be 10% to 50% of the surface area of the mask and/or the surface area of the substrate.

In view of this, the cooling load CL can be further reduced, and the pixel accuracy in the manufacture of the OLED display can be advantageously improved.

As shown in FIG. 12, the method 600 may further include determining a first time period t_xTogether for a fourth period of time t_qDuring which the deposition area, in particular the substrate and/or the mask, is cooled 604. "fourth time period t_q"can be understood as the time period during which cooling can take place, the fourth time period t_qIn a first time period t_xAnd (4) the following steps. In other words, the fourth time period may be less than or equal to the first time period t_x. Additionally or alternatively, the fourth time period t may be provided by at least one of the actively-cooled first surface, the cooling system, and the arrangement described herein_qDuring which cooling 604 is performed. The fourth time period t_qMay refer to the time period during which at least one of the actively-cooled first surface, the cooling system, and the arrangement may be operated during method 600.

In particular, the fourth time period t_qAt least one of the following may be satisfied: at a second time period t_yThen takes place, partly with a second time period t_yPartially overlapping with the second period of time t_yIs as long as, and longer than, the second time period t_yLong or short. For example, can utilizeThe first active cooling device as described herein is operated for a second time period t_yDuring cooling 602, and cooling 604 during a fourth time period may be operated using at least one of a third active cooling device and a fourth active cooling device as described herein. In other words, the method 600 comprising the cooling 602 and the further cooling 604 may be operated by an arrangement as described herein, in particular by an arrangement having a cooling system comprising a first active cooling device and a third active cooling device as described herein.

As shown in FIG. 13, the method 600 may include a first time period t_xTogether a fifth time period t_rDuring which the deposition area, in particular the substrate and/or the mask, is cooled 605. "fifth time period t_r"may be understood as the period during which cooling 605 may occur, the fifth period t_rIn a first time period t_xAnd (4) the following steps. In other words, the fifth time period t_rMay be less than or equal to the first period of time t_x. Additionally or alternatively, the fifth time period t may be provided by at least one of the actively-cooled first surface, the cooling system, and the arrangement described herein_rDuring which cooling 605 is performed. A fifth time period t_rMay refer to the time period during which at least one of the actively-cooled first surface, the cooling system, and the arrangement may be operated during method 600.

In particular, the fifth time period t_rAt least one of the following may be satisfied: at a second time period t_yAnd/or a fourth time period t_qThen takes place, partly with a second time period t_yAnd/or a fourth time period t_qPartially overlapping with the second period of time t_yAnd/or a fourth time period t_qIs as long as, and longer than, the second time period t_yAnd/or a fourth time period t_qLong or short. For example, a first active cooling device as described herein may be utilized to operate for a second time period t_yDuring cooling 602, cooling 604 during a fourth time period may be operated using a third active cooling device as described herein, and may be operated using a fourth active cooling device as described hereinFor a fifth time period t_rDuring which time cooling 605 occurs. In other words, method 600 including cooling 602, cooling 604, and cooling 605 may be operated by an arrangement as described herein, particularly by an arrangement having a cooling system including a first active cooling device, a third active cooling device, and a fourth active cooling device as described herein.

More particularly, the method 600 according to the embodiment of fig. 13 may be operated by an arrangement as described herein having a first and a third active cooling device arranged on either side of a deposition source relative to one or more outlets, and a fourth active cooling device arranged behind a deposition source as described herein.

In the present application, the first time period t_xA second time period t_yA third time period t_zA fourth time period t_qAnd a fifth time period t_rMay refer to a continuous period of time or a sum of discontinuous periods of time. For example, the vacuum chamber includes n deposition zones, where n is greater than 2, for a third time period t for deposition_zMay comprise at least a first discontinuous third time period t_z1And a second discontinuous third time period t_z2Corresponding to the first deposition area and the second deposition area, respectively. This for t_x、t_y、t_qAnd t_rThe same applies.

In embodiments that may be combined with the embodiments described herein, according to embodiments as described herein, during the second time period t_yA fourth time period t_qAnd a fifth time period t_rCooling the deposition area, particularly the substrate, during at least one of (a) and (b), may comprise transferring at least part of the cooling load CL away from the deposition area, particularly away from the mask.

In embodiments that may be combined with embodiments described herein, "cooling time" may be understood to mean the second time period t_yA fourth time period t_qAnd a fifth time period t_rAt least one of (1). Further, the cooling time may be substantially the same as the deposition time. For example, transfer along cold surfacesThe length in the transport direction may be 100mm or more and/or 800mm or less. For example, the cold surface may be one surface (see, e.g., fourth active cooling device 470 in fig. 9, or may be split into two or more cold surfaces 416).

According to embodiments, which can be combined with embodiments described herein, the method of the present disclosure can include at least 3n cool-down stages for a vacuum chamber including n deposition zones, where n is an integer.

According to yet a further aspect of the present disclosure, a vacuum chamber may be understood as a vacuum processing system for vacuum processing one or more substrates. The vacuum processing system may further include one or more pressure regulators, one or more valves, and ultimately a compressor, one or more mass flow controllers, and one or more proportional valves. According to a still further aspect of the present disclosure, a method for vacuum processing one or more substrates is provided. This method may be performed by a hardware arrangement, by a computer programmed by appropriate software, by any combination of the two, or in any other way.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

In particular, this written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject matter, including making and using any devices or systems and performing any incorporated methods. Although specific embodiments have been disclosed above, mutually exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if the claims do not have structural elements that do not differ from the literal language of the claims, or if the claims include equivalent structural elements with insubstantial differences from the literal language of the claims.

Claims

1. A cool-down system disposed in a vacuum chamber for cooling a deposition area, comprising:

an active cooling device comprising a first surface and a second surface; the first surface is disposed between the second surface and the deposition area; and

a heat exchanger configured to actively cool the first surface by transferring heat away from the first surface.

2. The cooling system of claim 1, wherein the heat exchanger is configured to actively cool the first surface by transferring the heat from the first surface to the second surface.

3. The cooling system of claim 1 or 2, wherein the heat exchanger is configured to cool the first surface to a temperature below-20 ℃.

4. The cooling system of any one of claims 1-3, wherein the heat exchanger is selected from the group consisting of: cryocoolers, freezers, and thermoelectric devices.

5. The cooling system of any of claims 1-4, wherein the first surface has an emissivity greater than 0.5.

6. The cooling system of any of claims 1-5, wherein the actively cooled first surface is configured to transfer at least a portion of a cooling load away from the deposition area.

7. The cooling system of any of claims 1-6, further comprising:

at least one support configured to move the active cooling device along the deposition area.

8. The cooling system of any of claims 1-6, wherein the active cooling unit is static within the vacuum chamber.

9. An arrangement for material deposition on a substrate, comprising:

a deposition source for performing material deposition on the substrate in the deposition region;

a cooling system having an active cooling device including an actively cooled first surface to transfer a cooling load away from the deposition area; and

a support for supporting the deposition source and the system, and configured to move the deposition source and the cooling system along the deposition area.

10. An arrangement for material deposition on a substrate, comprising:

a cooling system having a first active cooling device having an actively-cooled first surface configured to transfer heat away from the first surface and a heat exchanger configured to transfer a cooling load away from the deposition area; and

a cooling arrangement having a second active cooling device configured to reduce thermal radiation emitted by the deposition source.

11. The device according to claim 10, wherein the first surface that is actively cooled is arranged between the second active cooling device and the deposition area, in particular between the second active cooling device and the mask.

12. A method of material deposition on a substrate in a deposition area, comprising at least one of:

maintaining a temperature gradient Δ T (DEG C) over time between the deposition area and a first surface of a cooling system; and

transferring a cooling load away from the deposition area with a cooling system to maintain a substantially constant average temperature of the deposition area.

13. The method of claim 12, setting at least one of the temperature gradients (° c) at greater than 50 ℃ and setting the average temperature of the mask at 23 ° to 28 ℃.

14. A method of material deposition on a substrate, comprising:

in a first time period t_xDuring which a deposition source is moved along the substrate;

during the first time period t_xWithin a second time period t_yDuring which the substrate is cooled; and

during the first time period t_xThird time t of_zDepositing material on the substrate during a period, wherein the third time period t_zDuring which the temperature of the deposition area increases.

15. The method of claim 14, further comprising:

during the first time period t_xThe fourth time period t_qDuring which the substrate is cooled.

16. The method of claim 14 or 15, wherein at the second time t_ySegment and the fourth time period t_qDuring which the deposition area is cooled, including transferring at least a portion of the cooling load away from the deposition area.