KR20200138391A - Cooling system for cooling the deposition area, arrangement for depositing material in the deposition area, and method of depositing on a substrate in the deposition area - Google Patents

Abstract

A cooling system provided in the vacuum chamber to cool the deposition area comprises an active cooling device comprising a first surface and a second surface, the first surface being arranged between the second surface and the deposition area, and a first heat. And a heat exchanger configured to actively cool the first surface by transferring away from the surface. An arrangement for depositing a material on a substrate includes: a deposition source for depositing a material on the substrate in a deposition region; A cooling system having a first active cooling device having an actively cooled first surface and a heat exchanger configured to transfer heat away from the first surface, whereby the first actively cooled surface transfers the cooling load away from the deposition area. Configured to be ―; And a cooling arrangement having a second active cooling device configured to reduce thermal radiation from the deposition source.

Description

Cooling system for cooling the deposition area, arrangement for depositing material in the deposition area, and method of depositing on a substrate in the deposition area

[0001] Embodiments of the present disclosure relate to material deposition, such as organic material deposition, systems, arrangements and methods for organic material deposition. Embodiments of the present disclosure specifically relate to cooling systems provided in a vacuum chamber for cooling a deposition region, ie a vacuum chamber for depositing material. Embodiments of the present disclosure relate to arrangements for depositing material in a deposition area. Further, embodiments of the present disclosure relate to methods of depositing material on a substrate in a deposition area.

[0002] Organic evaporators are tools for producing organic light-emitting diodes (OLEDs). OLEDs are a special type of light emitting diodes in which the light emitting layer comprises a thin film of certain organic compounds. Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices and the like for displaying information. OLEDs can also be used for general spatial lighting. The range of viewing angles, luminance, and colors possible by OLED displays is larger than that of conventional LCD displays because OLED pixels emit light directly and do not utilize a back light. Therefore, the energy consumption of OLED displays is less than that of conventional LCD displays. In addition, the fact that OLEDs can be fabricated on flexible substrates leads to further applications. For example, a typical OLED display may include layers of organic material placed between two electrodes, all of which are individually energizable pixels in a manner of forming a matrix display panel. Is deposited on the substrate. The OLED is generally positioned between two glass panels, and the edges of the glass panels are sealed to encapsulate the OLED inside the glass panels.

[0003] Different sizes of display screens and hence glass panels may require significant reconfiguration of the process hardware and the process used to form the display devices. In general, there is a need to manufacture OLED devices on large area substrates. In the case of the manufacture of large scale OLED displays, for example for the deposition of patterned layers, masking the substrate presents various challenges.

[0004] OLED displays include, for example, a stack of several organic materials that are evaporated in a vacuum. Organic materials are deposited in a subsequent manner through shadow masks. For the manufacture of OLED stacks with high efficiency, co-deposition or co-evaporation of two or more materials, such as host and dopant, resulting in mixed/doped layers. -evaporation) is provided. It should also be taken into account that there are requirements for the evaporation of highly sensitive organic materials.

[0005] However, specifically in the field of consumer electronics products, expectations are increasing in terms of production efficiency.

[0006] In view of the above, improved methods, systems, apparatuses and arrangements for depositing material on a substrate would be beneficial. Embodiments of the present disclosure aim to provide systems, apparatuses, arrangements and methods for depositing material that overcome at least some of the problems in the art.

[0007] In view of the above, cooling systems provided in a vacuum chamber to cool a deposition area, arrangements for depositing a material in the deposition area, and methods of depositing a material on a substrate in the deposition area are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the detailed description and the accompanying drawings.

[0008] According to a first aspect of the present disclosure, there is provided a cooling system provided in a vacuum chamber to cool a deposition region. The cooling system comprises an active cooling device comprising a first surface and a second surface, the first surface being arranged between the second surface and the deposition region, and the first surface by transferring heat away from the first surface. And a heat exchanger configured to actively cool the.

[0009] According to further aspects of the present disclosure, in a cooling system as described herein, the actively cooled first surface is configured to transfer the cooling load away from the deposition area, specifically away from the mask.

[0010] According to yet another second aspect of the present disclosure, an arrangement for depositing a material on a substrate is provided. The arrangement is an active cooling device comprising a deposition source for depositing material on a substrate in the deposition area, a first surface that is actively cooled to transfer at least a portion of the cooling load away from the deposition area, specifically away from the mask. A cooling system having, and a support for supporting the deposition source and cooling system and configured to move the deposition source and cooling system along the deposition area.

[0011] According to yet another aspect of the disclosure, an arrangement for depositing a material on a substrate is provided. The arrangement comprises a cooling system having a deposition source for depositing material on a substrate in a deposition region, a first active cooling device having a first surface that is actively cooled, and a heat exchanger configured to transfer heat away from the first surface. The first surface to be cooled with a second active cooling device configured to transfer at least a portion of the cooling load out of the deposition area, specifically out of the mask, and a second active cooling device configured to reduce thermal radiation emitted by the deposition source. It includes a cooling arrangement.

[0012] According to yet another third aspect of the disclosure, a method of depositing a material on a substrate in a deposition region is provided. The method comprises the steps of maintaining a temperature gradient (ΔTD(°C)) over time between a deposition region, specifically a mask and a first surface of the cooling system, and moving the cooling load away from the deposition region, Specifically, it includes at least one of the steps of maintaining the average temperature of the deposition region, specifically the temperature of the substrate and/or the temperature of the mask substantially constant over time using a cooling system to deliver it away from the mask. do.

[0013] According to yet another aspect of the disclosure, a method of depositing a material on a substrate in a deposition region is provided. The method includes moving a deposition source along a substrate for a first time period, cooling the substrate for a second time period that is within a first time period, and on the substrate for a third time period that is within the first time period. Depositing a material, wherein the deposition region temperature, specifically the substrate temperature and/or the mask temperature is increased during a third time period.

[0014] According to a further aspect of the disclosure, in a method as described herein, cooling the deposition region, specifically the mask and/or substrate, for at least one of a second time period and a fourth time period. Includes transferring at least a portion of the cooling load out of the deposition region, specifically out of the mask.

[0015] In a way that the above-listed features of the present invention can be understood in detail, a more specific description of the present invention briefly summarized above can be made with reference to embodiments. The accompanying drawings relate to embodiments of the invention and are described below:
1 shows a schematic plan view of a cooling system provided in a vacuum chamber, according to embodiments as described herein;
FIG. 2 shows the cooling system according to FIG. 1 further illustrating heat transfer from the first surface to the second surface;
FIG. 3A shows the cooling system according to FIG. 1 further illustrating an actively cooled first surface configured to transfer at least a portion of the cooling load away from the deposition area;
3B shows the cooling system of FIG. 3A, illustrating an actively cooled first surface having a high emissivity according to embodiments as described herein;
4A shows a top view of a cooling system further comprising at least one support according to embodiments as described herein;
4B shows a top view of a cooling system including at least one support according to embodiments as described herein;
5A shows a top view of an arrangement for depositing material in a deposition region, according to embodiments as described herein;
5B shows a top view of a processing system, ie, an in-line apparatus, for depositing material, according to embodiments as described herein;
6 shows a top view of an arrangement for depositing material in a deposition area, according to embodiments as described herein;
Figure 7 shows the arrangement of Figure 6, further illustrating heat transfers during operation;
8 shows the arrangement of FIGS. 6 and 7, wherein the cooling system further comprises a third cooling device;
9 shows the arrangement of FIG. 8 with a support, wherein the cooling system further comprises a fourth cooling device;
10 depicts a flow diagram of a method of depositing a material, according to embodiments as described herein;
11 shows a schematic chart of the temperature variation of the deposition region over time, according to embodiments as described herein;
12 illustrates the method of FIG. 10 including cooling for a fourth time period according to embodiments as described herein;
13 shows the method of FIGS. 10 and 12 including cooling for a fifth time period according to embodiments described herein.

[0016] Reference will now be made in detail to various embodiments of the present invention, and one or more examples of various embodiments are illustrated in the drawings. Within the following description of the drawings, like reference numbers refer to like components. In general, only the differences for the individual embodiments are described. Each example is provided as a description of the invention and is not intended as a limitation of the invention. In addition, features illustrated or described as part of an embodiment may be used with respect to or in conjunction with other embodiments, to yield another additional embodiment. The description is intended to include such modifications and variations.

[0017] Before various embodiments of the present disclosure are described in more detail, some aspects of some terms and expressions used herein are described.

[0018] In the present disclosure, a “cooling system” will be defined as a system suitable for cooling the deposition area, eg, configured to cool the deposition area, provided at least in part in a vacuum chamber for depositing material, eg, organic material. I can. In particular, the cooling system may comprise an active cooling device having a first surface and a second surface, the first surface being arranged between the second surface and the deposition region of the vacuum chamber. In addition, the cooling system can include a heat exchanger configured to actively cool the first surface by transferring heat away from the first surface.

[0019] According to embodiments that may be combined with the embodiments described herein, the “first surface” and “second surface” of the active cooling device are said to correspond to two surfaces separate from the surfaces of the heat exchanger. Can be understood. For example, a heat exchanger may be “sandwiched” between a first surface and a second surface, and the active cooling device may include a first surface, a heat exchanger and a second surface. Further, the active cooling device may include one or more intermediate layers between the heat exchanger and at least one of the first and second surfaces. In particular, the one or more intermediate layers may be made of a material that enhances heat transfer from the first surface to the second surface.

[0020] According to embodiments combinable with the embodiments described herein, the “first surface” and “second surface” may correspond to the first surface and the second surface of the heat exchanger. For example, the active cooling device may consist of a heat exchanger.

[0021] In this disclosure, the term “heat exchanger” may be understood to include any devices suitable for transferring heat from one object or item to another object or item, such as configured to transfer heat. In particular, a "heat exchanger" according to the present disclosure transfers heat from a fluid to another fluid, from a fluid to a solid-state body, from a solid-state body to a fluid, or from a solid-state body to another solid-state body. Devices suitable for the following, ie configured to transfer heat, may be included. Heat transfer as described may be performed by at least one of heat radiation, heat conduction and heat convection.

[0022] In the present disclosure, the heat exchanger may be configured to “actively cool the first surface by transferring heat away from the first surface”. A heat exchanger as described herein can be configured to apply energy and/or work, such as electrical energy and/or mechanical work, to cool the first surface.

[0023] In particular, heat can be transferred away from the first surface and away from the deposition region, specifically away from the mask and/or substrate. For example, a heat exchanger can be understood as a device adapted to impart a temperature gradient over time between the deposition region and the first surface, eg, configured to impart a temperature gradient.

[0024] The term "gradient temperature" in this disclosure may refer to the modulus (absolute value) of the difference between a first temperature and a second temperature.

[0025] In the present disclosure, the term “cooling load” can be understood to refer essentially to the amount of heat present between the first surface and the deposition region.

[0026] Also, the term "cooling load" can be defined as the amount of thermal energy that can be removed from the deposition area to maintain the temperature in an acceptable temperature range. Speaking of the “acceptable temperature range”, the acceptable temperature range can be understood as a temperature provided in the range of less than 35°C, specifically less than 30°C, and more specifically 23 to 28°C. For example, the target temperature can be provided within an acceptable temperature range, such as the ranges described above. According to some embodiments that may be combined with the embodiments described herein, the target temperature may be controlled to change in the range of +- 1.5°C or less. For example, temperature control can be provided in the range of +-1.0°C or less, such as +- 0.5°C.

[0027] In the present disclosure, the term “cooling load” may further be understood as at least a portion of the thermal energy resulting from material deposition in the deposition region. In other words, "cooling load" may refer to at least a portion of the thermal energy imparted to the deposition area by the deposition source during material deposition, such as by thermal radiation and/or enthalpy of vaporization.

[0028] In this disclosure, the term “heat” can be understood to refer to the heat present between the first and second surfaces of the active cooling device. A heat exchanger as defined herein may be configured to transfer “heat” away from the first surface, specifically from the first surface toward the second surface.

[0029] In view of the above, the term “heat” may additionally correspond to at least a portion of a “cooling load” as defined herein. In particular, the cooling load may first be on the first surface that is actively cooled. At least a portion of the cooling load may be absorbed by the actively cooled first surface. The absorbed portion of the cooling load may refer to “heat” as described herein. Subsequently, "heat" can be transferred away from the first surface, such as towards the second surface, using a heat exchanger.

[0030] In the present disclosure, the terms “heat”, “cooling load” may be expressed in terms of commonly known thermodynamic quantities, such as energy and/or flux, or any other quantity relevant in the art.

[0031] According to embodiments of the present disclosure, a cold surface is added. The low temperature surface corresponds, for example, to the first surface 111 in FIG. 1. For example, the low temperature surface may be -20°C or less, such as -90°C or less, such as about -100°C. For example, the temperature may be -20 ℃ to -200 ℃. The temperature of the first surface may affect the area of the first surface, and the area of the first surface may affect the temperature of the first surface. According to some embodiments that may be combined with the embodiments described herein, the temperature of the first surface (during operation) and the surface area of the first surface may be inversely proportional. According to some embodiments that may be combined with other embodiments described herein, the cooling system 100 may include a cryo compressor and/or a Peltier element. For example, media for cryo compressors can be supplied through a media arm of a vacuum processing system, such as a media arm under atmospheric pressure. For example, the Peltier element can be arranged on a water-cooled surface.

[0032] Embodiments of the present disclosure make it possible to fully compensate the thermal load on the mask and substrate, for example using a heat sink of -100°C.

[0033] 1 shows a schematic cross-sectional view of a cooling system provided in a vacuum chamber for cooling a deposition region according to embodiments as described herein. As exemplarily shown in FIG. 1, a cooling system 100 is provided in a vacuum chamber 10 including a deposition region 11, and the cooling system 100 includes a first surface 111 and a second surface. And an active cooling device 110 having 112. Further, the first surface 111 is arranged between the second surface 112 and the deposition region 11. Additionally, the cooling system 100 includes a heat exchanger 113 configured to actively cool the first surface 111 by transferring heat away from the first surface 111.

[0034] In the present disclosure, the vacuum chamber 10 may be connected to one or more vacuum pumps to create a technical vacuum. In particular, the vacuum chamber 10 as described herein will be understood as a chamber capable of evacuating to a pressure of sub-atmospheric pressure, such as 10 mbar or less, specifically 1 mbar or less. I can.

[0035] In the present disclosure, the deposition region 11 may be understood to refer to the region of the vacuum chamber 10 in which at least a portion of material deposition may occur. Specifically, a deposition region as described herein may refer to a region in which at least one of a substrate and a mask may be disposed for material deposition. The deposition area can be static or dynamic. Specifically, the deposition area can be beneficially static to beneficially improve the mask and substrate alignment.

[0036] According to embodiments combinable with embodiments as described herein, the vacuum chamber 10 may include one or more deposition regions.

[0037] In the present disclosure, a “active cooling device” is a system comprising a first surface and a second surface as defined herein, specifically a system comprising a first surface arranged between a deposition region and a second surface. Can be defined. More specifically, the active cooling device according to the embodiments described herein may be an arrangement of two plates, for example two glass plates, the first surface corresponding to the first glass plate and the second surface to the second Corresponds to the glass plate.

[0038] In the present disclosure, a "first surface" refers to any surface made of at least one material having a high emissivity, specifically greater than 0.5, more specifically greater than 0.6, in particular in the range of 0.7 to 1. Can be referred to.

[0039] In addition, "first surface" is defined as any surface configured to be cooled to a temperature (T1) of less than -20°C, specifically in the range of -20°C to -200°C, more specifically substantially about -100°C. Can be.

[0040] In the following, the terms "first surface" and "actively cooled first surface" may be used interchangeably as having the same technical meaning, specifically in terms of structure and/or function.

[0041] In the present disclosure, a “second surface” may be defined as any surface configured to be heated to a temperature T2 that exceeds the temperature T1 of the first surface as described herein. In particular, the second surface can be heated to a temperature in the range of more than 40° C., specifically more than 50° C., more specifically 40 to 80° C.

[0042] In some embodiments, the heat exchanger further cools the first surface to a temperature (T1) within a temperature range as defined herein and/or heats the second surface to a temperature (T2) within a temperature range as defined herein. It can be defined as any device configured to be.

[0043] In embodiments combinable with the embodiments as described herein, the heat exchanger is further adapted to actively cool the first surface by transferring heat from the first surface to the second surface, i.e., actively It can be defined as any devices configured to cool.

[0044] According to embodiments combinable with the embodiments described herein, the heat exchanger may be selected from the group consisting of a cryocooler, a refrigerator, and a thermoelectric device, such as a Peltier element.

[0045] FIG. 2 shows a schematic plan view of the cooling system according to FIG. 1, further illustrating the heat transferred from the first surface 111 to the second surface 112, as depicted by the arrow 1 . Heat may be transferred away from the first surface 111 by the heat exchanger 113. Specifically, the heat exchanger 113 may be configured to actively cool the first surface 111 by transferring heat from the first surface 111 to the second surface 112.

[0046] As exemplarily shown in FIG. 2, the temperature T1 may exceed the temperature T2. A temperature gradient ΔTH (°C) may be provided between the first surface 111 and the second surface 112. The temperature gradient ΔTH can be actively imparted by the heat exchanger 113. Thus, the heat exchanger 113 can be sandwiched between the first surface 111 and the second surface 112, and the heat is at least by conduction, specifically from the first surface 111 to the second surface 112 Can be delivered. In other words, the heat exchanger 113 can be configured to provide the following relationship: T2> T1.

[0047] In embodiments, the temperature gradient ΔTH is the active work or active energy applied between the first surface 111 and the second surface 112 to further increase the temperature difference between T1 and T2. And the “natural” temperature difference between T1 and T2.

[0048] FIG. 3A shows a schematic plan view of the cooling system according to FIG. 1, for example further illustrating an actively cooled first surface 111 configured to transfer at least a portion of the cooling load (CL) away from the deposition region 11 Shows. As depicted by arrow 2, the transfer of a cooling load (CL) can occur from the deposition region 11 toward the first surface 111.

[0049] According to the embodiments described herein, which can be combined with other embodiments, the first surface can be cooled to a temperature below room temperature, such as below -20°C.

[0050] As defined herein, the first surface 111 may be cooled by a heat exchanger 113. By cooling the first surface 111, a temperature (TD), specifically, a temperature gradient (ΔTD(°C)) between the deposition region 11 having a mask temperature and the first surface 111 having a temperature T1 Can be given.

[0051] In the present disclosure, “temperature TD” may be understood to refer to the temperature of the deposition region, specifically the temperature of the mask, and more specifically the real-time temperature of the mask. The temperature TD may fluctuate over time, and specifically, may increase when the deposition region, specifically the mask and/or substrate is subjected to material deposition.

[0052] In addition, "Temperature (TDa)" refers to the average temperature of at least one of the deposition area, the substrate and the mask, specifically, the thermal radiation emitted by the deposition source by the deposition area before material deposition can occur. It can be understood to refer to the average temperature of the deposition region before it may be experienced. Additionally, the average temperature (TDa) may be less than 35°C and/or more than 20°C, and specifically may be in the range of 23 to 30°C.

[0053] In embodiments that may be combined with the embodiments described herein, the heat exchanger 113 covers the first surface 111, less than -30°C, specifically in the range of -30°C to -200°C, more Specifically, it may be configured to substantially cool to a temperature T1 of about -100°C.

[0054] For example, the temperature of the deposition region (TDa) may further be defined as being the average temperature of different temperature values taken by the TD over time.

[0055] As illustrated exemplarily in FIG. 3A, the cooling load (CL) transmission 2 may be caused by a temperature gradient ΔTD (°C), specifically, by thermal radiation.

[0056] By providing a cooling system as described herein, at least a portion of the cooling load can be reduced and the quality of pixel accuracy can be advantageously improved. In accordance with embodiments described herein, for example, an evaporation source that evaporates an organic material provides at least a small thermal load on the substrate and/or a mask that masks the substrate, regardless of the quality of the cooling or heat shielding of the source. . Thus, the mask and/or substrate may undergo a temperature rise of, for example, 5° C. or even smaller temperature increases. In the case of masking accuracy for OLED (RGB) displays, masking requires pixel accuracy, i.e. accuracy in the micron range. This is very difficult when processing large area substrates with a size of 1 m 2 or more. This is much more difficult for essentially vertically oriented substrates, given the gravity that affects the masking accuracy. Accordingly, embodiments provide a cooling system for reducing the temperature increase on the substrate and/or mask. The cooling system includes an actively cooled surface that is cooled to a temperature below -30° C., such as the first surface 111 described in FIG. 3A. The actively cooled surface can move along the substrate and/or mask, reducing the thermal energy provided by evaporation.

[0057] FIG. 3B shows a schematic plan view of the cooling system of FIG. 3A, illustrating an actively cooled first surface 111 that may have a high emissivity, according to embodiments as described herein. As exemplarily shown in FIG. 3B, the first surface 111 may be made of a material having a high emissivity, such as a highly emissive ceramic. Specifically, the first surface 111 may have an emissivity in the range of greater than 0.5, more specifically greater than 0.6, and particularly 0.8 to 1.

[0058] To beneficially increase OLED display manufacturing and pixel accuracy, by providing a first surface with a high emissivity as defined herein, the cooling load (CL) in the deposition area can be better reduced.

[0059] Subsequently, the amount of cooling load (CL) absorbed by the first surface 111, i.e., "heat" as defined above, additionally, as illustrated exemplarily in FIG. 112).

[0060] In some embodiments, the actively cooled first surface 111 may be configured to completely transfer the cooling load away from the deposition region 11, specifically away from the mask.

[0061] In embodiments that may be combined with the embodiments described herein, the cooling system comprises at least one or more active cooling devices and one or more heat exchangers, specifically one or more active cooling devices as described herein and It may include one or more heat exchangers as described herein.

[0062] According to embodiments combinable with the embodiments described herein, the cooling system may further include at least one support configured to move the active cooling device along the deposition area.

[0063] 4 shows a schematic plan view of a cooling system according to embodiments described herein, further comprising a support. As exemplarily shown in FIG. 4, the cooling system 200 may include an active cooling device 110 and one support 201 as exemplarily shown in FIGS. 1-3B. The support 201 may be configured to move the active cooling system 110 along the deposition region 11.

[0064] By providing the support 201 to the cooling system 200, the cooling system 200 may be movable along the deposition region 11. The deposition area 11 can be kept static and the pixel accuracy can be advantageously improved.

[0065] As exemplarily shown in FIG. 4A, the support part 201 may be configured to move in the first direction D1 along the deposition area. Specifically, the support portion moves in a first orientation along the first direction D1 and/or in a second orientation along the first direction D1, specifically in a second orientation opposite to the first orientation D1. It may be configured, and more specifically, the support may move back and forth along the direction D1. Thus, the second orientation can be provided by moving the cooling device by an angle of about 180°. This can be utilized to reduce the temperature of the second substrate or second mask on the opposite side of the vacuum chamber.

[0066] 4B, the support 201 is moved in a second direction D2 different from the first direction D1, specifically a second direction that is essentially orthogonal to the first direction D1. Can be configured. The second direction D2 may specifically have a curved trajectory extending from the first direction to the third direction. Additionally, the support 201 is configured to move along a third direction D3, specifically a third direction D3 that is essentially parallel to the first direction D1 within the vacuum chamber as described herein. Can be. The third direction D3 may extend along the additional deposition area in the vacuum chamber, and specifically, the additional deposition area is arranged parallel to the deposition area described above. In addition, the support part 201 may be configured to move from the third direction D3 to the first direction D1 along the fourth direction D4, and specifically, the fourth direction D4 is the first direction. It may be symmetrical to the second direction D2 with respect to the axis perpendicular to the (D1) and the third direction (D3). According to embodiments that can be combined with the embodiments described herein, the first direction D1, the second direction D2, the third direction D3, and the fourth direction D4 are looped tracks. ) 202 can be represented.

[0067] In embodiments that may be combined with the embodiments described herein, the support may move along the direction D1, for example, it may have a translational motion along D1. The support can move back and forth along D1. In addition, the cooling system can be rotated by an angle of about 180°, for example about an axis of rotation orthogonal to the support. This can be utilized to reduce the temperature of the second substrate or second mask on the opposite side of the vacuum chamber.

[0068] According to some embodiments, the cooling system may be connectable to at least one support (shown in FIG. 5A). The cooling system can be connected to at least one support. At least one support may be provided within a vacuum chamber as described herein.

[0069] 5A shows a schematic plan view of an arrangement for depositing a material on a substrate, according to embodiments described herein. The arrangement 300 is a deposition source 301 for depositing a material on the substrate 302 in the deposition area 303 and at least a part of a cooling load (CL) is removed from the deposition area 303, specifically, a mask A cooling system 304 comprising an active cooling device 305 having an actively cooled first surface 306 configured to deliver out of and to support the deposition source 301 and the cooling system 304 It includes a support 307 configured to move the deposition source 301 and cooling system 304 along the region 303. Additionally, the arrangement 300 may include an alignment unit 312 for aligning the substrate 302 with respect to the mask, such as an alignment device and a controller that monitors the alignment device.

[0070] Also, the deposition source 301 may refer to an evaporation source. As illustrated by way of example in FIG. 5A, the deposition source 301 may refer to an evaporation source including one evaporation crucible and one distribution pipe. The distribution pipe may be provided with a plurality of outlets, specifically, a plurality of outlets may be provided along the length of the distribution pipe. The deposition source may be suitable for depositing a single material, ie it may be configured to deposit a single material.

[0071] As illustratively shown in FIG. 5A, the deposition source 301 may refer to an evaporation source array including two or more evaporation crucibles and two or more distribution pipes (not shown). Evaporation crucibles may be configured to evaporate two or more materials, such as organic materials. In addition, the two or more distribution pipes may be provided with outlets (not shown) along the length of the two or more distribution pipes, and the first distribution pipe of the two or more distribution pipes is one of the two or more evaporation crucibles. It may be in fluid communication with the first evaporation crucible. The “deposition source” may in particular be suitable for depositing two or more materials on a substrate, ie it may be configured to deposit two or more materials on the substrate.

[0072] As exemplarily shown in FIG. 5A, the support 307 may be configured to move along the track 308. The deposition source 301 and cooling system 304 may be moved back and forth along the first direction D1 as indicated by arrow 392. Further, the deposition source 301 and cooling system 304 may be moved by an angle, such as 180°, to process the second substrate, as indicated by arrow 394. The second substrate may face the first substrate. Having the cooling system 304 on the same support 307 as the deposition source 301 transfers a cooling load (CL) immediately after the heat load is transferred to the deposition region 303 by the deposition source 301. Make it possible.

[0073] In embodiments that may be combined with the embodiments described herein, the support 307 may move back and forth along the direction D1, and/or the deposition source and cooling system may be at an angle of about 180° about the axis. You can rotate as many times as you like. Thus, the evaporation source and cooling system, such as the outlets of the evaporation source, can define a looped-track (not shown in Fig. 5A) around the direction D1.

[0074] In addition, the deposition region 303 as exemplarily shown in FIG. 5A may include a substrate arrangement including a substrate carrier 310 holding a substrate 302. In addition, the deposition region 303 may include a mask arrangement including a mask carrier 312 holding the mask 313. As illustrated in FIG. 5A, a mask arrangement, specifically a mask 313 may be arranged between the substrate arrangement, specifically the substrate 302 and the cooling system 304.

[0075] In order to provide a temperature gradient ΔTD with respect to the temperature TD of the deposition region 303, specifically with respect to the mask temperature, the actively cooled first surface 306 may be cooled to a temperature T1. . At least a portion of the cooling load (CL) may be absorbed by the actively cooled first surface 306 and subsequently transferred out of the deposition region 303, specifically out of the mask arrangement 311. have.

[0076] As already described above, the actively cooled first surface 306 may be specifically made of an emissivity high emissivity material, such as a high emissivity ceramic, as defined herein, which is absorbed by cooling load) and beneficially improve the pixel accuracy in OLED display manufacturing.

[0077] In embodiments that may be combined with the embodiments described herein, the cooling system 304 as illustratively shown in FIG. 5A may be any of the cooling systems of the present disclosure, specifically FIGS. It may correspond to cooling systems as illustrated in 4.

[0078] In embodiments that may be combined with other embodiments described herein, the cooling system 304 allows the first surface 306 to be actively cooled, such as when the support 307 moves in the direction D1. It may be arranged so as to be able to transfer the cooling load away from the deposition region 303. Alternatively or additionally, the cooling system 304 allows the actively cooled first surface 306 to transfer the cooling load away from the deposition region 314, such as when the support moves in the direction D1 and It may be arranged to perform at least one of cooling the deposition area 314, and the deposition area 314 is arranged parallel to the direction D4.

[0079] In accordance with some embodiments of the present disclosure, processing systems are described, each having vacuum chambers or deposition apparatuses, arranged in a clustered arrangement. This can be particularly beneficial for RGB OLED manufacturing processes, ie processes in which the substrate and shadow mask are fixed, eg for pixel accuracy purposes. Embodiments of the present disclosure may also be applicable to white OLED applications. For example, white OLED applications may be useful for lighting applications, and applications where OLED lighting is utilized as a backlight for televisions. Such applications may have an edge exclusion mask (instead of a shadow mask), or mask separation devices fabricated on a large area substrate. However, taking into account the increased deposition rates, the thermal load applied to the substrate and/or mask is also increased. For example, high throughput of substrates in a system can lead to increased enthalpy of evaporation. Also, the idle times that the substrate is not processed and are transferred in the system, for example, are reduced. In view of the above, heating the substrate and/or heating the mask can be considerable. Accordingly, removing the cooling load from the substrate and/or mask according to embodiments described herein can be beneficially utilized in in-line deposition systems.

[0080] 5B shows a processing system 500. Two or more deposition apparatuses 510 are provided in-line. For example, two or more deposition apparatuses may be provided adjacent to each other. The deposition apparatus 510 may include a vacuum chamber 10. One or more deposition sources 301 may be included in the vacuum chamber 10. For example, each of the deposition sources of adjacent deposition devices may provide one layer of a layer stack of organic materials. According to embodiments, as exemplarily shown in FIG. 5B, the deposition source 310 or the deposition sources may be static within a vacuum chamber or vacuum chambers. For example, the substrate 302 along with the mask 312 may be transferred or transferred through the processing system 500 along the transfer track 575.

[0081] According to the embodiments described herein, an active cooling device having a first surface 306 may be provided in the vacuum chambers 10. For example, one or more active cooling devices may be provided next to the deposition sources 301. Thus, the heat load provided towards the substrate and/or mask while the substrate and/or mask is moving past the deposition source can be removed from the substrate and/or mask by one or more active cooling devices. Accordingly, a cooling system provided in the vacuum chamber to cool the deposition region can be provided. The cooling system comprises: an active cooling device comprising a first surface and a second surface, the first surface being arranged between the second surface and the deposition region; And a heat exchanger configured to actively cool the first surface by transferring heat away from the first surface. According to still further embodiments that can be combined with other embodiments described herein, other modifications, features, details and aspects of cooling systems and/or active cooling devices are illustrated in FIG. 5B. As shown, it can be utilized in an in-line deposition system. However, active cooling devices for inline systems can be static compared to active cooling devices for RGB OLED applications where the substrate and mask are static. A cooling system with an active cooling device having a first surface can counter-act the increased heat load transferred from the source to the substrate and/or mask in a short time, in particular due to high throughput manufacturing.

[0082] 6 shows an arrangement for depositing material on a substrate according to embodiments as described herein, for example with a static substrate-mask arrangement. The arrangement 400 includes a deposition source 401 for depositing a material on the substrate 402 in the deposition region 413, a first active cooling device 415 having an actively cooled first surface 416 and A cooling system 414 having a heat exchanger 417 configured to transfer heat away from the actively cooled first surface 416-the actively cooled first surface 416 places a cooling load on the deposition region 413, Specifically configured to transfer away from the mask, and a cooling arrangement 417 having a second active cooling device 418 configured to reduce thermal radiation from the deposition source 401.

[0083] In the present disclosure, a "cooling arrangement" is suitable for reducing thermal radiation from a deposition source, specifically from a deposition source towards a deposition area, more specifically towards a mask and/or substrate, That is, it can be defined as any arrangement configured to reduce. In other words, the cooling arrangement may be defined as a "cooling shield arrangement" that protects the deposition area from thermal radiation emitted by the deposition source, specifically the substrate and/or mask.

[0084] Further, a “cooling arrangement” according to the present disclosure may further be defined as comprising a second active cooling device that can be activated by a cooling medium. For example, a second active cooling device may refer to a double layers wall through which a cooling medium, such as cooling water, can flow between two layers to cool the second active cooling device.

[0085] As exemplarily illustrated in FIG. 6, the deposition source 401 may refer to two or more evaporators, that is, two or more evaporation crucibles (not shown). Further, two or more evaporation crucibles may include two or more distribution pipes 4012. Two or more distribution pipes 4012 as illustrated in FIG. 6 can have a triangular shape such that they can be arranged side by side with each other in an advantageous, efficient manner. Two or more material deposition efficiencies can be advantageously improved.

[0086] In some embodiments, the two or more distribution pipes 4012 may have any other shape, such as a cylindrical shape that allows for the deposition of two or more materials, specifically the simultaneous deposition of two or more materials. I can.

[0087] Further, the two or more distribution pipes 4012 may be heated by one or more heating elements 450. One or more heating elements 450 may be provided on the outer walls of one or more distribution pipes 4012. One or more heating elements 450 may correspond to electric heaters mounted on the walls of the two or more distribution pipes 4012. For example, one or more heating elements 450 may be provided by heating wires, such as coated heating wires, that are clamped or otherwise fixed to two or more distribution pipes 4012.

[0088] Additionally, the two or more distribution pipes 4012 may have one or more outlets 4013 provided along the length of the two or more distribution pipes 4012, among the two or more distribution pipes 4012 The first distribution pipe may be in fluid communication with a first evaporation crucible (not shown) among two or more evaporation crucibles (not shown).

[0089] The one or more outlets 4013 of the two or more distribution pipes 4012 may be, for example, one or more openings or one or more nozzles that may be provided in a showerhead or other vapor distribution system. The deposition source 401 may comprise a vapor distribution showerhead, such as a linear vapor distribution showerhead having a plurality of nozzles or openings. A showerhead may be understood herein as including an enclosure having openings such that the pressure in the showerhead is higher than the pressure outside the showerhead, such as at least 10 times higher.

[0090] As exemplarily shown in FIG. 6, a second active cooling device 418 may be provided on at least one side of the two or more distribution pipes 4012, and at least one side is one or more outlets ( 4013) may be provided.

[0091] Further, the second active cooling device 418 may include one or more shaper shields, or the second active cooling device 418 may be provided with one or more shaper shields. As exemplarily shown in FIG. 6, the two shaper shields 4181 may be provided with a second active cooling device 418, specifically, the two shaper shields 4181 are provided with the second active cooling. It may be attached to the device 418. Shaper shields 4181 may extend from a portion of the deposition source toward the deposition region 413. The two heat shields 4181 and the second active cooling device 418 may be arranged to provide a U-shaped cooling heat shield to reduce heat radiation towards the deposition area, ie the substrate and/or mask.

[0092] As illustratively shown in FIG. 6, arrows 3, 4, and 5 each illustrate the evaporated organic material exiting the two or more distribution pipes 4012. Due to the essentially triangular shape of the distribution pipes 4012, the evaporation cones resulting from the two or more distribution pipes 4012 can be very close to each other, and thus, two or more distribution pipes ( The mixing of organic materials from 4012) can be improved.

[0093] Thus, the direction of the evaporated material exiting the first distribution pipe or two or more distribution pipes 4012 through the outlets 4013 can be controlled, that is, the angle of vapor emission is advantageously Can be reduced.

[0094] In addition, the shaper shields 418 can be configured to delimit the deposition region 413, e.g., a distribution cone of organic materials that are dispensed towards the substrate, i.e., the shaper shields 4181 are organic material. It may be configured to block at least some of them. The width of the emission angle can be advantageously controlled.

[0095] Additionally, the shaper shields 418 may be cooled to further reduce thermal radiation emitted toward the deposition region 413, that is, heat radiation emitted from the deposition source 401 toward the deposition region 413. . In addition, the second active cooling device 418 can be activated by a cooling medium 419 selected from the group consisting of water, oil and glycol. The cooling medium 419 may be provided in the second active cooling device 418 or in the second active cooling device 418 and may be suitable for actively cooling the second active cooling device 418, i.e. , It may be configured to actively cool the second active cooling device 418.

[0096] 6, the first surface 416 that is actively cooled is a deposition region 413, specifically a mask and/or a substrate and a cooling arrangement 417, specifically a second active cooling. It may be arranged between devices 418.

[0097] In embodiments that may be combined with the embodiments described herein, the cooling system 414 may be arranged between the cooling arrangement 417 and the deposition region 413. By providing the arrangement 400 having the configuration as described herein, at least a part of the cooling load (CL) can be reduced and the pixel accuracy can be further improved, specifically, the OLED display manufacturing is advantageously improved. Can be.

[0098] The cooling system 414, actively cooled first surface 416, and heat exchanger 417 as illustratively shown in FIG. 6 are a cooling system as illustratively shown in FIGS. 1- 4 above. , The first surface being actively cooled and can function the same as the heat exchanger. In particular, the cooling system 414 may correspond to a cooling system as described herein, specifically as described herein, specifically in consideration of FIGS. 1-4.

[0099] Additionally, the arrangement 400 includes one or more heat shields 419 surrounding at least the first distribution pipe as described herein, specifically two or more heat shields, such as 5 or more heat shield layers, such as, It may include 10 heat shield layers. The two or more heat shields 420 may be configured to reflect heat back to the center of the first distribution pipe and beneficially reduce heat loss towards the environment. In addition, two or more heat shields 419 may be arranged on the side of one or more outlets 4013, and two or more heat shields 419 have one of two or more distribution pipes 4012. Openings 4191 may be provided at positions of the above outlets 4013.

[00100] In addition, the evaporator control housing (not shown) is provided adjacent to the two or more distribution pipes and can be connected to the two or more distribution pipes through a thermal insulator (not shown). As described above, the evaporator control housing configured to maintain atmospheric pressure therein comprises: at least one element selected from the group consisting of a switch, a valve, a controller, a cooling unit, a cooling control unit, a heating control unit, a power supply, and a measuring device. It can be configured to housing.

[00101] 7 shows an arrangement for depositing material on a substrate according to the embodiments of FIG. 6, specifically illustrating heat transfers that may occur during operation. As illustratively shown in FIG. 7, arrows 6 illustrate the heat radiation emitted from the deposition source 401, specifically two or more distribution pipes 4012. Two or more heat shields 420, specifically toward the center of the deposition source 401, more specifically toward the center of each distribution pipe of the two or more distribution pipes 4012 at least It may be suitable for reflecting a portion, ie it may be configured to reflect at least a portion of the heat radiation.

[00102] In addition, some of the heat radiation that may not be reflected by the two or more heat shields 420 may be at least partially collected by the cooling arrangement 417. In particular, at least some of the unreflected heat radiation may be collected in the second active cooling device 418. The second active cooling device 418 can be actively cooled by a cooling medium 419, such as cooling water. The unreflected heat radiation can be advantageously reduced, specifically towards the deposition region 413, more specifically towards the mask and/or substrate, the unreflected heat radiation can be reduced.

[00103] In the present disclosure, the term “non-reflected heat radiation” will be understood to refer to a portion of the heat radiation that is transferred outside of the deposition source 401, specifically outside of the two or more distribution pipes 4012. I can.

[00104] As exemplarily shown in FIGS. 6 and 7, arrows 3, 4, and 5 evaporate through the outlets 4013 from the two or more distribution pipes 4012 toward the deposition region 413 Illustrate the transport of organic materials. As described above, the U-shaped cooling heat shield provided by the two heat shields 4181 and the second active cooling device 418 defines a range of distribution cones of organic materials distributed towards the deposition region 413. Can be decided. Further, the U-shaped cooling heat shield may be configured to be cooled by the cooling medium 419, and advantageously to reduce thermal radiation towards the deposition region 413.

[00105] Transfer of the evaporated organic material to be deposited on the substrate in the evaporation region can impose a thermal load due to thermal radiation carried by the evaporated organic material. Evaporation regions, such as substrates and masks, can be subjected to thermal loads as defined herein, specifically negatively affected and damaged.

[00106] Heat load as described herein can refer to the cooling load defined above. In the present disclosure, the terms "cooling load" and "heat load" may be used interchangeably as having the same meaning (ie, technically the same meaning).

[00107] In view of the above, a cooling system 414 as described herein, in particular a first active cooling device 415 having an actively cooled first surface 416 and an actively cooled first surface 416 By providing an arrangement 400 having a cooling system 414 that includes a heat exchanger 417 configured to transfer heat away from-the actively cooled first surface 416 provides a cooling load (CL) to the deposition area ( 413), specifically configured to transfer out of the mask -, the negatively impacting heat load can be further reduced. The arrangement 400 can advantageously improve pixel accuracy in OLED display manufacturing.

[00108] In particular, the cooling system 414 may operate as the cooling systems described herein, and specifically the cooling system 414 may correspond to a cooling system according to embodiments as illustrated in FIGS. 1-4.

[00109] The first actively cooled surface 416 can be arranged between the second active cooling device 418 and the deposition region 413 as illustrated in FIG. 7. As shown by arrow 2 in FIGS. 3A and 7, heat transfer, i.e., cooling load (CL) transfer 2, can occur from the deposition region toward the cooling system. As shown in FIG. 7, a cooling load (CL) transfer 2 may occur from the deposition region 413, specifically the position of the mask and/or substrate, toward the actively cooled first surface 416. have.

[00110] Heat transfer is active with a temperature gradient, i.e., a temperature gradient (ΔTD(°C) as defined herein), in particular the temperature of the deposition region 413 (TD), specifically the temperature of the mask, and a temperature T1. It may be caused by a temperature difference between the first surfaces 416 that are cooled to. The substrate and/or mask of the deposition region 413 may be less susceptible to a thermal load resulting from the thermal radiation emitted by the deposition source 401 as described herein, specifically.

[00111] In view of the above, by providing a cooling system 414 between the deposition region 413 and the cooling arrangement 417, a cooling load (CL) can be further reduced, and pixel accuracy is beneficial in OLED display manufacturing. It can be improved.

[00112] FIG. 8 shows an arrangement according to the embodiments of FIG. 7, wherein the cooling system 414 further comprises a third active cooling device 460. As illustratively shown in FIG. 8, the first active cooling device 415 and the third cooling device 460 are on both sides relative to the one or more outlets 4013 positions, specifically one or more outlets. It can be arranged symmetrically with respect to the axial showerhead including 4013.

[00113] Using the above configuration, at least one of the first active cooling device 414 and the third cooling device 415 can be configured to cool the deposition region 413 before material deposition can occur. The heat load subsequently released by thermal radiation during deposition can be compensated in advance. Additionally, at least one of the first active cooling device 414 and the third active cooling device 460 may be configured to further cool the deposition region 413 after material deposition may occur. The heat load released by thermal radiation during material deposition can at least be reduced, and at most can be transferred completely away from the deposition area 413. By providing the third active cooling device 460 as described herein, the delivery of the cooling load (CL) away from the deposition region 413 can be increased, and the pixel accuracy will be further improved in OLED display manufacturing. I can.

[00114] In embodiments that may be combined with other embodiments described herein, the first active cooling device and the third active cooling device may be identical in structure and function. Specifically, at least one of the first active cooling device and the third active cooling device may correspond to the cooling system illustrated in FIGS. 1-4 and described herein.

[00115] Alternatively, the first active cooling device and the third active cooling device may differ from each other in structure, heat transfer capabilities, and function, in particular depending on the requirements of the material deposition arrangement that may be provided in advance.

[00116] 9 shows an arrangement according to the embodiments of FIG. 8, in which the cooling system 414 may further include a fourth active cooling device 470. Additionally, the arrangement 400 may further include a support part 307 as shown in FIG. 6. As illustratively shown in FIG. 8, a fourth active cooling device 470 may be arranged behind the deposition source 401. In the present disclosure, the term "on the rear" may refer to the side of the deposition source opposite the side where one or more outlets 4013 may be arranged. The "rear" side of the deposition source 401 may additionally be defined as the opposite side of the side with no outlets and one or more outlets. According to embodiments that may be combined with other embodiments described herein, low temperature surfaces may be provided on the front side and/or rear side of the deposition source 401.

[00117] As illustrated in FIG. 9, the fourth active cooling device 470 may have a length, which is essentially approximately the length of the deposition source 401. Alternatively, the fourth active cooling device may comprise one or more active cooling devices, specifically as described herein.

[00118] Further, the support 307 may be adapted to support and move the deposition source 401, the cooling arrangement 417 and the cooling system 414, respectively, ie, may be configured to support and move respectively.

[00119] Using the above configuration, when the support 307 moves along the looped track 308, the fourth active cooling device cools the deposition area and applies a cooling load (CL) to the deposition area, specifically the material. It can be configured to do at least one of delivering away from an additional deposition area disposed opposite the deposition area that undergoes deposition. For example, when the support 307 moves along the looped track 308 along the direction D1 during material deposition in the deposition area 413, the fourth active cooling device cools the deposition area 480 and/or It may be configured to transfer the cooling load away from the deposition region 480. In another example, when the support 307 moves along the looped track 308 along the direction D4 during material deposition in the deposition region 480, the fourth active cooling device applies a cooling load (CL) to the deposition region ( 413) can be configured to deliver.

[00120] In embodiments that may be combined with other embodiments described herein, the vacuum chamber may contain only one deposition area. A fourth active cooling device as described herein can advantageously increase heat transfer towards the rear of the deposition source and reduce heat radiation towards the deposition area.

[00121] By providing the fourth active cooling device 470, the cooling load in the deposition area can be further reduced, and the pixel accuracy can be further improved in OLED display manufacturing.

[00122] According to yet another aspect of the disclosure, a method of depositing a material on a substrate in a deposition region is provided. A method of depositing a material on a substrate in a deposition region includes maintaining a temperature gradient (ΔTD) over time between a deposition region in which the substrate is provided and a first surface of a cooling system, and a cooling load (CL). At least one of the steps of maintaining a substantially constant average temperature of the deposition area (TD), specifically the mask, over time using a cooling system to deliver out of the deposition area, specifically out of the mask. Include.

[00123] In the following, the term “first surface of the cooling system” may be understood to refer to at least one of “a first surface” and “a first surface that is actively cooled” as described herein. Further, the “first surface” may be a “actively cooled first surface” as described herein, specifically as described in the embodiments of FIGS. 1 to 9.

[00124] As already described in the embodiments with reference to FIG. 3A, maintaining the temperature gradient [Delta]TD over time can be achieved, for example, by using an actively cooled first surface.

[00125] The method is that the temperature gradient (ΔT) can be provided in a range of more than 40° C., specifically more than 120° C., more specifically 220 to 500° C., and the average temperature of the substrate and/or mask is from 23° C. It may include at least one of those that may be provided at 30°C.

[00126] By providing a temperature gradient (ΔTD) over time, the cooling load (CL) as described herein can at least be reduced over time, and at most can be transferred essentially completely away from the deposition area. And, the pixel accuracy can be improved in OLED display manufacturing.

[00127] According to another aspect of the disclosure, a method of depositing a material on a substrate in a deposition region is provided. 10 shows a flow diagram of a method 600 of depositing a material on a substrate in a deposition region, in accordance with embodiments described herein. The method 600 comprises moving the deposition source along the substrate during a first time period (t _x ) (601), cooling the substrate during a second time period (t _y ) within a first time period (t _x ). 602, and depositing 603 a material on the substrate during a third time period (t _z ) within a first time period (t _x ), the deposition region temperature (TD), specifically The temperature of the substrate and/or the temperature of the mask is increased during the third time period t _z .

[00128] The method 600 according to the embodiments described herein may be performed in a vacuum chamber as described above, and the moving step 601 may be implemented using a support as described above, cooling The step of making 602 may be performed herein, specifically using an actively cooled first surface, cooling systems and arrangements as described with reference to the embodiments of FIGS. The step of depositing 603 can include at least one of those that can be performed by using a deposition source as described herein.

[00129] In the present disclosure, the "first time period (t _x )" is a deposition source, specifically along one or more deposition regions within a vacuum chamber, and more specifically along a looped track as described herein. May be understood to refer to a period of time during which 601 moves.

Further, the “second time period (t _y )” may be understood as a time period in which cooling may occur, and the second time period (t _y ) is within the first time period (t _x ). In other words, the second time period may be less than or equal to the first time period (t _x ). Additionally or alternatively, the step of cooling 602 during a second period of time (t _y ) is to be performed by at least one of the actively cooled first surface, cooling systems and arrangements as described herein. I can. The second time period t _y may refer to a time period during which at least one of the actively cooled first surface, cooling systems, and arrangements may be operated.

[00131] In the present disclosure, a “third time period (t _z )” may be understood to refer to a time period in which material deposition may occur, and the third time period (t _z ) is a first time period within (t _x ). In other words, the third time period t _z may be less than or equal to the first time period t _x . Additionally or alternatively, the step of depositing 603 during the third time period t _z may be performed by at least one of the deposition sources and arrangements as described herein. The third time period t _z may refer to a time period in which at least one of the deposition source and the arrangements can be operated.

In particular, method 600 may include cooling 602 and depositing 603 in this order. The deposition source may be moved during the first time period (t _x ). The deposition region, specifically the substrate and/or the mask, is first, during a second period of time t _y , specifically at least one of the actively cooled first surface, cooling systems and arrangements as described herein. Can be cooled using. In order to at least partially upfront the subsequent cooling load (CL) imparted during the material deposition over the third time period t _z , the deposition region can be advantageously cooled.

[00133] In particular, a method 600 comprising cooling 602 and depositing 603 in this order is advantageously provided for an arrangement as described herein, specifically for at least one direction D1. It can be operated by an arrangement having a first active cooling device configured "upfront" of one or more outlets of the deposition source as described above in In the following, the term “upfront” may be understood to refer to “downstream of” one or more outlets, for at least one direction D1. In other words, the first active cooling device can be arranged between one or more outlets and the forward position along at least one direction D1.

[00134] In some embodiments, the depositing step 603 may occur before the cooling step 602. The deposition region, specifically the substrate and/or the mask, may be heated first during the material deposition over a second time period t _y . A cooling load (CL) may be imparted due to heat radiation emitted toward the deposition region by the deposition source. Subsequently, the cooling can be passed out from the CL (cooling load) is the deposition region, at least in part, during the third time period (t _z), and can occur over a third period of time (t _z). The cooling load (CL) in the deposition area can at least be reduced, and the pixel accuracy can be further improved in OLED display manufacturing.

[00135] In particular, the method 600 comprising the step of depositing 603 and the step of cooling 602 in this order comprises arrangements as described herein, specifically, of the deposition source for at least one direction D1. It can be operated by an arrangement with a first active cooling device configured to be “behind” one or more outlets. In the following, the term "behind" may be understood to refer to the upstream of" one or more outlets, for at least one direction D1. In other words, the first active cooling device can be arranged between one or more outlets and the backward position along at least one direction D1.

[00136] 11 shows a schematic chart of temperature fluctuations in the evaporation area over time, specifically in the mask and/or substrate. The temperature in the deposition region may fluctuate over time, and specifically, may fluctuate around an average constant temperature (TDa) as illustrated by a dashed horizontal line in FIG. 11. The temperature TDa can advantageously be a predetermined temperature, such as about 25°C. The tolerance or change in the predetermined temperature can be, for example, +/- 1°C.

[00137] A cooling system as described herein may be provided having a first surface that is actively cooled, and may be configured to maintain a TD constant of approximately essentially TDa over time. For example, when the deposition area is heated during material deposition, the actively cooled first surface can at least one of cooling the deposition area and transferring at least a portion of the cooling load away from the deposition area. In other words, the deposition region may be forced to return to the average constant temperature (TDa) as referred to herein by the cooling system, in particular the actively cooled first surface.

[00138] As exemplarily shown in FIG. 11, the heated surface area imparted by thermal radiation of the deposition source during material deposition, for example, may be expressed as a surface area 501 (see FIG. 10 ). Further, for example, the cooling surface area imparted by the cooling of the cooling system, specifically the actively cooled first surface, may be expressed as the surface area 502.

[00139] In some embodiments, surface area 502 may be essentially equal to surface area 501. The cooling load (CL) can be transferred essentially completely away from the deposition area. In embodiments that may be combined with the embodiments described herein, the surface area 502 may amount to 90% to 110% of the surface area 501.

[00140] According to embodiments described herein, the heat load transferred to the mask and/or the substrate can be removed as a cooling load, for example by a first surface of the active cooling device. For example, in order to have a stable temperature in the range of +-1 °C, it is beneficial to remove the entire heat load as a cooling load. As described above, the cooling load can be affected by the temperature of the first surface and the area of the first surface. For example, the area of the first surface of the active cooling device or the sum of the areas of cooling surfaces (eg, the first surface) may be 10% to 50% of the surface area of the mask and/or the surface area of the substrate.

[00141] In view of the above, a cooling load (CL) can be further reduced, and pixel accuracy can be advantageously improved in OLED display manufacturing.

[00142] As shown in FIG. 12, the method 600 cools the deposition region, specifically the substrate and/or the mask, during a fourth time period t _q within a first time period t _x Step 604 may be further included. The “fourth time period (t _q )” can be understood as a time period in which cooling may occur, and the fourth time period (t _q ) is within the first time period (t _x ). In other words, the fourth time period may be less than or equal to the first time period (t _x ). Additionally or alternatively, the step of cooling 604 for a fourth period of time (t _q ) may be performed by at least one of the actively cooled first surface, cooling systems and arrangements as described herein. I can. The fourth time period t _q may refer to a time period during which at least one of the actively cooled first surface, cooling systems and arrangements may be operated during method 600.

[00 143] In particular, the fourth time period (t _q) is the second one occurring after the time period (t _y), and the second to a time period overlapping (t _y), and in part, a second time period (t _y ), and longer or shorter than the second time period t _y . For example, cooling 602 for a second period of time (t _y ) can be operated using a first active cooling device as described herein, and cooling 604 for a fourth period of time may be performed herein. It can be operated using at least one of a third active cooling device and a fourth active cooling device as described in. In other words, the method 600 comprising cooling 602 and further cooling 604 is an arrangement as described herein, specifically a first active cooling device and a first active cooling device as described herein. 3 Can be operated by an arrangement with a cooling system comprising an active cooling device.

[00144] As shown in FIG. 13, the method 600 cools the deposition region, specifically the substrate and/or the mask, during a fifth time period t _r within a first time period t _x Step 605 may be included. The “fifth time period t _r ”can be understood as a time period during which the cooling step 605 may occur, the fifth time period t _r being within the first time period t _x . In other words, the fifth time period t _r may be less than or equal to the first time period t _x . Additionally or alternatively, the step of cooling 605 for a fifth time period t _r is to be performed by at least one of the actively cooled first surface, cooling systems and arrangements as described herein. I can. The fifth time period t _r may refer to a time period during which at least one of the actively cooled first surface, cooling systems and arrangements may be operated during method 600.

[00145] In particular, the fifth time period (t _r ) occurs after the second time period (t _y ) and/or the fourth time period (t _q ), the second time period (t _y ) and/or a fourth time period (t _q) and to partially overlap with the second time period (t _y) and / or the fourth time period (t _q) that lasts as long as, and a (t _y) second time period and /Or may satisfy at least one of longer or shorter than the fourth time period t _q . For example, cooling 602 for a second time period t _y may be operated using a first active cooling device as described herein, and cooling 604 for a fourth time period Three can be operated using an active cooling device, and the step of cooling 605 for a fifth time period t _r can be operated using a fourth active cooling device as described herein. In other words, the method 600 comprising the step of cooling 602, the step of cooling 604, and the step of cooling 605 is an arrangement as described herein, specifically a method as described herein. It can be operated by an arrangement with a cooling system comprising one active cooling device, a third active cooling device and a fourth active cooling device.

[00146] More specifically, the method 600 according to the embodiments of FIG. 13 includes a first active cooling device and a third active cooling device arranged on both sides of the deposition source with respect to one or more outlets, and as described herein. It can be operated by an arrangement as described herein, with a fourth active cooling device arranged on the rear side of the same deposition source.

[00147] In the present application, a first time period (t _x ), a second time period (t _y ), a third time period (t _z ), a fourth time period (t _q ), and a fifth time period (t _r ) May refer to a continuous time period or a sum of discontinuous time periods. For example, in a vacuum chamber including n deposition regions (n is greater than 2), the third time period t _{z for} deposition is at least a first deposition area corresponding to the first deposition area and the second deposition area, respectively. It may include a third discontinuous time period (t _z1 ) and a third discontinuous time period (t _z2 ). The same can be applied to t _x , t _y , t _q and t _r .

In embodiments that can be combined with the embodiments described herein, at least one of the second time period (t _y ), the fourth time period (t _q ), and the fifth time period (t _r ) Cooling the deposition region, specifically the substrate over a period of time, may include transferring at least a portion of the cooling load (CL) away from the deposition region, specifically away from the mask, according to embodiments described herein. have.

[00149] In embodiments that can be combined with the embodiments described herein, the "cooling time" is a second time period (t _y ), a fourth time period (t _q ) and a fifth time period (t _r ) may be understood to refer to at least one time period. Also, the cooling time can be essentially the same as the deposition time. For example, the length along the transport direction of the low temperature surface may be 100 mm or more and/or 800 mm or less. For example, the cold surface can be one surface (see, eg, fourth active cooling device 470 in FIG. 9, or can be separated into two or more cold surfaces 416 ).

[00150] According to embodiments that may be combined with the embodiments described herein, the method of the present disclosure may include at least 3n cooling phases for a vacuum chamber comprising n deposition regions, where n is an integer. to be.

[00151] According to another further aspect of the present disclosure, a vacuum chamber may be understood as a vacuum processing system for vacuum processing one or more substrates. The vacuum processing system may further include one or more pressure regulators, one or more valves, ultimately a compressor, one or more mass flow controllers, and one or more proportioning valves. According to another further aspect of the disclosure, a method for vacuum processing one or more substrates is provided. The method may be performed by hardware components, by a computer programmed by suitable software, by any combination of the two, or in any other way.

[00152] While the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be envisioned without departing from the basic scope of the present disclosure, and the scope of the present disclosure is governed by the following claims. Is determined by

[00153] In particular, this written description is intended to disclose the present disclosure, including the best mode, and also to any person skilled in the art, making and using any devices or systems, and using any included methods. Examples are used to enable practice of the described subject matter, including performing. While various specific embodiments have been disclosed in the foregoing, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, in other examples, if the claims have structural elements that do not differ from the literal language of the claims, or the claims have equivalent structural elements with only non-essential differences from the words of the claims. When including elements, it is intended to be within the scope of the claims.

Claims (16)

As a cooling system provided in a vacuum chamber to cool the deposition area,
An active cooling device comprising a first surface and a second surface, the first surface being arranged between the second surface and the deposition region; And
A heat exchanger configured to actively cool the first surface by transferring heat away from the first surface,
A cooling system provided in a vacuum chamber to cool the deposition area. The method of claim 1,
The heat exchanger is configured to actively cool the first surface by transferring the heat from the first surface to the second surface,
A cooling system provided in a vacuum chamber to cool the deposition area. The method according to claim 1 or 2,
The heat exchanger is configured to cool the first surface to a temperature of less than -20°C,
A cooling system provided in a vacuum chamber to cool the deposition area. The method according to any one of claims 1 to 3,
The heat exchanger is selected from the group consisting of a cryo-cooler, a refrigerator, and a thermoelectric device,
A cooling system provided in a vacuum chamber to cool the deposition area. The method according to any one of claims 1 to 4,
The first surface has an emissivity greater than 0.5,
A cooling system provided in a vacuum chamber to cool the deposition area. The method according to any one of claims 1 to 5,
The actively cooled first surface is configured to transfer at least a portion of the cooling load away from the deposition region,
A cooling system provided in a vacuum chamber to cool the deposition area. The method according to any one of claims 1 to 6,
Further comprising at least one support configured to move the active cooling device along the deposition region,
A cooling system provided in a vacuum chamber to cool the deposition area. The method according to any one of claims 1 to 6,
Active cooling unit is static within the vacuum chamber,
A cooling system provided in a vacuum chamber to cool the deposition area. As an arrangement for depositing a material on a substrate,
A deposition source for depositing a material on the substrate in the deposition area;
A cooling system having an active cooling device comprising a first surface that is actively cooled to transfer a cooling load away from the deposition area; And
A support for supporting the deposition source and the system and configured to move the deposition source and the cooling system along the deposition region,
Arrangement for depositing a material on a substrate. As an arrangement for depositing a material on a substrate,
A deposition source for depositing a material on the substrate in the deposition area;
A cooling system having a first active cooling device having an actively cooled first surface and a heat exchanger configured to transfer heat away from the first surface, the actively cooled first surface disengaging a cooling load from the deposition area. Configured to deliver —; And
A cooling arrangement having a second active cooling device configured to reduce thermal radiation emitted by the deposition source,
Arrangement for depositing a material on a substrate. The method of claim 10,
The actively cooled first surface is arranged between the second active cooling device and the deposition region, specifically between the second active cooling device and the mask,
Arrangement for depositing a material on a substrate. As a method of depositing a material on a substrate in a deposition area,
Maintaining a temperature gradient (ΔT(°C)) over time between the deposition region and the first surface of the cooling system; And
Maintaining an average temperature of the deposition area substantially constant using a cooling system to transfer a cooling load away from the deposition area.
Containing at least one of,
A method of depositing a material on a substrate in a deposition area. The method of claim 12,
The temperature gradient (ΔT(°C)) is provided above 50°C, and
Provided that the average temperature of the mask is between 23°C and 28°C
At least one of,
A method of depositing a material on a substrate in a deposition area. As a method of depositing a material on a substrate,
Moving the deposition source along the substrate for a first period of time (t _x );
Cooling the substrate during a second time period (t _y ) within the first time period (t _x ); And
Depositing a material on the substrate during a third time period (t _z ) within the first time period (t _x ),
The deposition region temperature is increased during the third time period (t _z ),
A method of depositing a material on a substrate. The method of claim 14,
Further comprising cooling the substrate during a fourth time period (t _q ) within the first time period (t _x ),
A method of depositing a material on a substrate. The method of claim 14 or 15,
Cooling the deposition region during the second time period (t _y ) and the fourth time period (t _q ) comprises transferring at least a portion of the cooling load away from the deposition region,
A method of depositing a material on a substrate.

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