TW202025413A - Cooling system provided in a vacuum chamber for cooling a deposition area, arrangement for material deposition on a subtrate, and method of material deposition on a substrate in a deposition area - Google Patents

Abstract

A cooling system provided in a vacuum chamber for cooling a deposition area comprising an active cooling device comprising a first surface and second surface; the first surface is arranged between the second surface and the deposition area and a heat exchanger configured to actively cool the first surface by transferring a heat away from the first surface. An arrangement for material deposition on a substrate, comprising a deposition source for material deposition on a substrate in a deposition area; a cooling system having a first active cooling device with an actively cooled first surface and a heat exchanger configured to transfer a heat away from the first surface; whereby the actively cooled first surface is configured to transfer a cooling load away from the deposition area; and a cooling arrangement having a second active cooling device configured to reduce heat radiation from the deposition source.

Description

A cooling system for cooling the deposition area in a vacuum chamber, a device for material deposition on a substrate, and a method for material deposition on a substrate in the deposition area

The embodiments of the present disclosure are related to material deposition, for example, organic material deposition, and systems, devices, and methods for organic material deposition. The embodiment of the present disclosure particularly relates to a cooling system provided in a vacuum chamber for cooling the deposition area (that is, a vacuum chamber for material deposition). The embodiment of the present disclosure relates to an apparatus for material deposition in a deposition area. Furthermore, the embodiment of the disclosure relates to a method of material deposition on a substrate in a deposition area.

The organic evaporator is a tool used to produce organic light-emitting diodes (OLED). OLED is a special type of light emitting diode in which the emission layer includes a thin film of a specific organic compound. OLED is used in the manufacture of TV screens, computer monitors, mobile phones, and other handheld devices to display information. OLED can also be used for general space lighting. OLED displays may have a larger range of colors, brightness, and viewing angles than traditional liquid crystal display (LCD) displays. This is because OLED pixels emit light directly instead of using a backlight. Therefore, the energy consumption of an OLED display is lower than that of a traditional LCD display. In addition, the fact that OLEDs can be fabricated on flexible substrates has led to further applications. For example, a typical OLED display may include an organic material layer located between two electrodes, and the organic material layer is all deposited on a substrate in a manner of forming a matrix display panel with pixels independently available for energy. The OLED is generally placed between two glass panels, and the edge of the glass panel is sealed to encapsulate the OLED therein.

Display screens and glass panels of different sizes may require substantial reconfiguration of the processing and processing hardware used to form the display device. Generally, it is desirable to manufacture OLED devices on large-area substrates. In order to manufacture large-scale OLED displays, masking the substrate, such as the deposition of a pattern layer, poses many challenges.

OLED displays include a stack of various organic materials, which are evaporated in a vacuum, for example. The organic material is deposited through the shadow mask in a subsequent manner. In order to efficiently manufacture the OLED stack, co-deposition or co-evaporation of two or more materials is provided, for example, a host and dopants are provided, resulting in a mixed/doped layer. Furthermore, it must be considered that there are requirements for the evaporation of very sensitive organic materials.

However, expectations for production efficiency are growing, especially in the field of consumer electronics.

In view of this, improved methods, systems, equipment, and houses for material deposition on substrates will be beneficial. The embodiments of the present disclosure aim to provide systems, equipment, devices, and methods for material deposition that overcome at least some of the problems in the art.

In view of this, a cooling system provided in a vacuum chamber for cooling a deposition area, a device for material deposition in the deposition area, and a method for material deposition on a substrate in the deposition area are provided. Other aspects, benefits, and features of the present disclosure are obvious from the scope of patent application, specification, and drawings.

According to the first aspect of the present disclosure, there is provided a cooling system provided in a vacuum chamber for cooling a deposition area. The cooling system includes an active cooling device, including a first surface and a second surface, the first surface is disposed between the second surface and the deposition area; and a heat exchanger configured to A heat is transferred away from the first surface, actively cooling the first surface.

According to a further embodiment of the present disclosure, as in the cooling system described herein, the actively cooled first surface is configured to transfer a cooling load away from the deposition area, particularly from a mask.

According to a second aspect of the present disclosure, there is provided an apparatus for material deposition on a substrate. The device includes a deposition source for material deposition on the substrate in a deposition area; a cooling system with an active cooling device, the active cooling device includes a first surface that is actively cooled to load a cooling load At least part of the deposition area is transferred away, especially from a mask; and a support member for supporting the deposition source and the cooling system, and the support member is configured to move the deposition area along the The deposition source and this cooling system.

According to a further aspect of the present disclosure, an apparatus for depositing materials on a substrate is provided. This device includes a deposition source for material deposition on the substrate in a deposition area; a cooling system with a first active cooling device, the first active cooling device having a first surface that is actively cooled and a heat The heat exchanger is configured to transfer heat away from the first surface, and the actively cooled first surface is configured to transfer at least part of a cooling load away from the deposition area, especially from a The mask is transferred away; and a cooling device having a second active cooling device configured to reduce heat radiation emitted by the deposition source.

According to still another third aspect of the present disclosure, a method for material deposition on a substrate in a deposition area is provided. The method includes at least one of the following: maintaining a temperature gradient ΔT (°C) between the deposition area (especially a mask) and a first surface of a cooling system over time; and using a cooling system to A cooling load is transferred away from the deposition area (especially from the mask), so as to maintain the deposition area (especially the substrate and/or the mask) at a substantially constant average temperature over time.

According to still another aspect of the present disclosure, a method for material deposition on a substrate is provided. The method includes moving a deposition source along the substrate during a first time period; cooling the substrate during a second time period in the first time period; and a third time during the first time period During this period, the material is deposited on the substrate. In the third period of time, the temperature of the deposition area (especially the temperature of the substrate and/or the temperature of the mask) increases.

According to a still further aspect of the present disclosure, as the method described herein, cooling the deposition area (especially the mask and/or the substrate) in one of the second time period and the fourth time period includes cooling load At least part of it passes away from this deposition area, especially from this mask.

Various embodiments of the present invention will now be described in detail, and one or more examples of the present disclosure are shown in the drawings. In the following description of the drawings, the same reference numerals are used to indicate the same elements. Generally speaking, only the differences between the various embodiments will be described. Each example is provided only to explain the present invention, but not intended to limit the present invention. In addition, features illustrated or described as part of one embodiment can be used in or combined with other embodiments to produce yet another embodiment. The content is intended to include such adjustments and changes.

Before describing the various embodiments of the present disclosure in more detail, some aspects related to certain terms and expressions used herein are explained.

In the present disclosure, a "cooling system" can be defined as a system that is at least partially provided in a vacuum chamber for material deposition. The material deposition is, for example, organic material deposition, suitable for, for example, configured to cool the deposition area . In particular, the cooling system may include an active cooling device having a first surface and a second surface, the first surface being disposed between the second surface and the deposition area of the vacuum chamber. In addition, the cooling system may include a heat exchanger configured to actively cool the first surface by transferring heat away from the first surface.

According to embodiments that can be combined with the embodiments described herein, the “first surface” and the “second surface” of the active cooling device can be understood as corresponding to two surfaces different from the surface of the heat exchanger. For example, the heat exchanger may be "sandwiched" between the first surface and the second surface, and the active cooling device may include the first surface, the heat exchanger, and the second surface. Furthermore, the active cooling device may include one or more intermediate layers between the heat exchanger and at least one of the first surface and the second surface. In particular, one or more intermediate layers may be made of materials that enhance heat transfer from the first surface to the second surface.

According to embodiments that can be combined with the embodiments described herein, the “first surface” and the “second surface” may correspond to the first surface and the second surface of the heat exchanger. For example, the active cooling device may include a heat exchanger.

In the present disclosure, the term "heat exchanger" can be understood to include any device that is suitable for, for example, being configured to transfer heat from one object or article to another object or article. In particular, the "heat exchanger" according to the present disclosure may include a device suitable for, that is, configured to transfer heat from one fluid to another, from one fluid to a solid object, and from a The transfer of a solid object to a fluid or from a solid object to another solid object. The heat transfer may be performed by at least one of heat radiation, heat conduction, and heat convection.

In this disclosure, the heat exchanger can be configured to "actively cool the first surface by transferring heat away from the first surface." The heat exchanger as described herein may be configured to apply energy and/or work (eg, electrical energy and/or mechanical work) to cool the first surface.

In particular, heat can be transferred away from the first surface and from the deposition area, especially from the mask and/or the substrate. For example, a heat exchanger can be understood to be suitable for, for example, being configured to impart a temperature gradient between the deposition area and the first surface over time.

In this disclosure, the term "gradient temperature" may refer to the modulus (absolute value) of the difference between the first temperature and the second temperature.

In the present invention, the term "cooling load" can be understood as essentially referring to the heat existing between the first surface and the deposition area.

Furthermore, the term "cooling load" can be defined as the amount of thermal energy that can be removed from the deposition area to maintain the temperature within an acceptable temperature range. By "acceptable temperature range", it can be understood that the temperature provided is lower than 35°C, especially lower than 30°C, and more particularly in the range of 23°C to 28°C. For example, a target temperature can be provided within an acceptable temperature range (for example, within the above range). According to some embodiments that can be combined with the embodiments described herein, the target temperature can be controlled to vary within a range of ±1.5°C or less. For example, the temperature can be controlled within a range of ±1.0°C or less, such as ±0.5°C.

In this disclosure, the term "cooling load" can be further understood as at least part of the thermal energy generated by the deposition of the material in the deposition area. In other words, the "cooling load" can refer to at least part of the thermal energy imparted by the deposition source in the deposition area during the deposition of the material (for example, by thermal radiation and/or the enthalpy of evaporation).

In this disclosure, the term "heat" can be understood as referring to the heat existing between the first surface and the second surface of the active cooling device. The heat exchanger as defined herein may be configured to transfer "heat" away from the first surface, particularly from the first surface toward the second surface.

In view of this, the term "heat" can further correspond to at least a part of the "cooling load" defined herein. In particular, the cooling load may be first on the first surface that is actively cooled. With the actively cooled first surface, at least part of the cooling load can be absorbed. The absorbed part of the cooling load can be referred to as "heat" as described herein. By using the heat exchanger, the "heat" can then be transferred away from the first surface, for example, toward the second surface.

In the present disclosure, the terms “heat” and “cooling load” can be expressed by well-known thermodynamic quantities, such as energy and/or flux, or any other quantities related to the technical field.

According to the disclosed embodiment, a cold surface is added. This cold surface corresponds to a first surface 111 in Figure 1, for example. For example, the cold surface may be at a temperature of -20°C or lower, such as -90°C or lower, such as -100°C. For example, the temperature can be -20°C to -200°C. The temperature of the first surface may affect the area of the first surface, and vice versa. According to some embodiments that can be combined with the embodiments described herein, the surface area of the first surface and the temperature of the first surface (during operation) may be inversely proportional. According to some embodiments that can be combined with other embodiments described herein, a cooling system 100 may include a cryo compressor and/or a Peltier element. For example, the medium for a cryogenic compressor can be fed through a media arm in a vacuum processing system. The medium arm is, for example, a media arm under atmospheric pressure. For example, the Peltier element can be arranged on a cooling surface.

The embodiments of the present disclosure allow a heat sink to be fully utilized at -100°C to compensate for the thermal load on the mask and the substrate, for example.

Figure 1 shows a schematic cross-sectional view of a cooling system provided in a vacuum chamber for cooling a deposition area according to embodiments described herein. As exemplarily shown in Figure 1, a cooling system 100 is provided in a vacuum chamber 10 including a deposition area 11, and the cooling system 100 includes an active cooling system having a first surface 111 and a second surface 112装置110。 Device 110. In addition, the first surface 111 is disposed between the second surface 112 and the deposition area 11. In addition, the cooling system 100 includes a heat exchanger 113 which is configured to actively cool the first surface 111 by transferring heat away from the first surface 111.

In the present disclosure, the vacuum chamber 10 can be connected to one or more vacuum pumps to generate a technical vacuum. In particular, the vacuum chamber 10 as described herein can be understood as a chamber that can be evacuated to a pressure lower than atmospheric pressure, the pressure being, for example, 10 mbar or less, especially 1 mbar or less.

In the present disclosure, the deposition area 11 can be understood to refer to an area where at least part of material deposition can occur in the vacuum chamber 10. In particular, the deposition area described herein may refer to an area where at least one of a substrate and a mask can be provided for material deposition. The deposition area can be static or dynamic. In particular, the deposition area can advantageously be static, thereby advantageously improving the alignment of the mask and the substrate.

According to embodiments that can be combined with the embodiments described herein, the vacuum chamber 10 may include one or more deposition regions.

In the present disclosure, the "active cooling device" can be defined as a system including a first surface and a second surface as defined herein, especially including a first surface disposed between a deposition area and a second surface. One system on one surface. More specifically, the active cooling device according to the embodiment described herein may be a device with two plates (for example, two glass plates), the first surface corresponds to a first glass plate, and the second surface corresponds to A second glass plate.

In the present disclosure, the “first surface” can refer to any surface made of at least one material with a high emissivity. The high emissivity is particularly shown to be greater than 0.5, more particularly greater than 0.6, especially in Emissivity in the range of 0.7 to 1.

Furthermore, the "first surface" can be defined as any surface suitable for cooling at a temperature T1, which is lower than -20°C, especially in the range of -20°C to -200°C, More specifically, it is substantially about -100°C.

In the following, the terms "first surface" and "actively cooled first surface" can be used interchangeably because they have the same technical meaning, especially in terms of structure and/or function.

In this disclosure, the "second surface" can be defined as any surface suitable for heating at a temperature T2 higher than the temperature T1 of the first surface as described herein. In particular, the second surface may be heated to a temperature higher than 40°C, particularly higher than 50°C, more particularly in the range of 40°C to 80°C.

In some embodiments, the heat exchanger may be further defined as being configured to cool the first surface to a temperature T1 within the temperature range defined herein and/or heat the second surface to a temperature within the temperature range defined herein Any device with a temperature T2.

In embodiments that can be combined with the embodiments described herein, the heat exchanger can be further defined as any device, that is, adapted to be configured to actively transfer heat from the first surface to the second surface. Any device that cools the first surface.

According to embodiments that can be combined with the embodiments described herein, the heat exchanger may be selected from the group consisting of cryocoolers, refrigerators, and thermoelectric devices (e.g., Peltier). element).

FIG. 2 shows a schematic top view of the cooling system according to FIG. 1, and further shows the heat transferred from the first surface 111 to the second surface 112 as indicated by the arrow 1. The heat can be transferred away from the first surface 111 by the heat exchanger 113. In particular, the heat exchanger 113 may be configured to actively cool the first surface 111 by transferring heat from the first surface 111 to the second surface 112.

As exemplarily shown in Figure 1, the temperature T1 may be higher than the temperature T2. A temperature gradient ΔTH (°C) may be given between the first surface 111 and the second surface 112. The heat exchanger 113 may actively give the temperature gradient ΔTH. Accordingly, the heat exchanger 113 can be sandwiched between the first surface 111 and the second surface 112, and at least through conduction, can specifically transfer heat from the first surface 111 to the second surface 112. In other words, the heat exchanger 113 may be configured to provide the following relationship: T2>T1.

In an embodiment, the temperature gradient ΔTH may be generated by a combination of a "natural" temperature difference between the temperature T1 and the temperature T2, and the active work or active energy applied between the first surface 111 and the second surface 112 , Thereby further increasing the temperature difference between the temperature T1 and the temperature T2.

Fig. 3A shows a schematic top view of the cooling system according to Fig. 1, for example, and further shows a first surface 111 for active cooling. The first surface 111 is configured to remove at least part of a cooling load CL from the deposition area. 11 pass away. As shown by the arrow (transfer 2), the cooling load CL may be transferred from the deposition area 11 toward the first surface 111.

According to the embodiments described here that can be combined with other embodiments, the first surface can be cooled to a temperature below room temperature, for example below -20°C.

As defined here, the first surface 111 may be cooled by the heat exchanger 113. By cooling the first surface 111, a temperature gradient ΔTD (°C) can be given between the deposition area 11 having a temperature TD (especially a mask temperature) and a surface 111 having a temperature T1.

In this disclosure, "temperature TD" can be understood as referring to the temperature of the deposition area, especially the temperature of the mask, and more particularly the real-time temperature of the mask. The temperature TD may fluctuate over time, especially when the deposition area (especially the mask and/or the substrate) is subject to material deposition, the temperature TD may rise.

Further, "temperature TDa" can be understood as referring to an average temperature of at least one of the deposition area, the substrate, and the mask, especially an average temperature of the deposition area before material deposition can occur, more particularly in the deposition area. The deposition area is subjected to an average temperature of the deposition area before the thermal radiation emitted by the deposition source. In addition, the average temperature TDa may be lower than 35°C and/or higher than 20°C, and in particular may be in the range between 23°C and 30°C.

In an embodiment that can be combined with the embodiments described herein, the heat exchanger 113 may be configured to cool the first surface 111 to a temperature T1, which is lower than -30°C, especially at It is in the range of -30°C to -200°C, more particularly substantially about -100°C.

For example, the temperature TDa of the deposition area can be further defined as the average temperature of different temperature values of the temperature TD obtained over time.

As shown by way of example in Fig. 3A, because of the temperature gradient ΔTD (°C), especially because of heat radiation, the transfer of the cooling load CL 2 occurs.

By providing a cooling system as described herein, at least part of the cooling load can be reduced, and the quality of pixel accuracy can be advantageously improved. According to the embodiment described here, an evaporation source evaporates, for example, an organic material, regardless of the quality of cooling or heat shielding. The evaporation source provides the substrate and/or the shield for shielding the substrate with at least a small heat load. Accordingly, a mask and/or a substrate may experience a temperature increase, for example, a temperature increase of 5°C or less. In order to provide a mask accuracy for an OLED (three primary colors (RGB)) display, the mask requires a pixel accuracy, that is, an accuracy in the micrometer range. This is extremely challenging for processing large-area substrates with a size of 1m² or larger. This is even more challenging for a substrate where gravity affects the accuracy of the mask in a substantially vertical direction. Therefore, the embodiment provides a cooling system for reducing the temperature rise on the substrate and/or the mask. The cooling system includes an active cooling surface, such as the first surface 111 as described in Figure 3A, the first surface 111 being cooled to a temperature below -30°C. The active cooling surface may move along the substrate and/or the mask to reduce the heat energy provided by evaporation.

FIG. 3B shows a schematic top view of the cooling system of FIG. 3A, and illustrates a first surface 111 that can be actively cooled with a high emissivity according to the embodiment described herein. As exemplarily shown in Figure 3B, the first surface 111 may be made of a material with high emissivity, such as a high emissivity ceramic. In particular, the first surface 111 may have an emissivity greater than 0.5, more particularly greater than 0.6, especially in the range of 0.8 to 1.

By providing the first surface with high emissivity as defined herein, the cooling load CL can be better reduced at the deposition area, thereby advantageously increasing the pixel accuracy and the manufacture of the OLED display.

Subsequently, the amount of the cooling load CL absorbed by the first surface 111 (ie, “heat” as defined above) can be further transferred to the second surface 112, as shown exemplarily in FIG. 2.

In some embodiments, the actively cooled first surface 111 may be configured to completely transfer the cooling load away from the deposition area 11, particularly from the mask.

In an embodiment that can be combined with the embodiment described herein, the cooling system may include at least one or more active cooling devices and one or more heat exchangers, in particular one or more active cooling devices as described here. Device and one or more heat exchangers as described herein.

According to embodiments that can be combined with the embodiments described herein, the cooling system may further include at least one support, and the at least one support is configured to move the active cooling device along the deposition area.

Figures 4A and 4B show schematic top views of the cooling system according to the embodiment described herein, further comprising a support member. As exemplarily shown in FIGS. 4A and 4B, the cooling system 200 may include an active cooling device 110 (exemplarily shown in FIGS. 1 to 3B) and a support 201. The support 201 can be configured to move the active cooling system 110 along the deposition area 11.

By providing the support 201 in the cooling system 200, the cooling system 200 can move along the deposition area 11. The deposition area 11 can be kept static, and the pixel accuracy can be advantageously improved.

As exemplarily shown in FIG. 4A, the support 201 may be configured to move in a first direction D1 along the deposition area. In particular, the support may be configured to move in a first orientation along a first direction D1, and/or to move in a second orientation along a first direction D1, especially along a first direction D1. The second orientation opposite to the orientation moves, and more particularly, the support can move back and forth along the direction D1. Accordingly, the second orientation can be provided by moving the cooling device by an angle of about 180°. This can be used to lower the temperature of the second substrate or second shield on the opposite side of the vacuum chamber.

As shown in FIG. 4B, the support 201 may be configured to move in a second direction D2 different from the first direction D1, particularly in a second direction substantially orthogonal to the first direction D1. The second direction D2 may particularly have a curved track extending from the first direction to the third direction. In addition, the support 201 may be configured to move along a third direction D3 as described herein, particularly along a third direction D3 that is substantially parallel to the first direction D1 in the vacuum chamber. The third direction D3 may extend along other deposition areas in the vacuum chamber, especially other deposition areas arranged in parallel with the foregoing deposition areas. In addition, the support 201 may be configured to return to the first direction D1 from the third direction D3 along a fourth direction D4. In particular, the fourth direction D4 may be perpendicular to the first direction D1 and the third direction D3. The axis is symmetrical to the second direction D2. According to embodiments that can be combined with the embodiments described herein, the first direction D1, the second direction D2, the third direction D3, and the fourth direction D4 may refer to an annular track 202.

In an embodiment that can be combined with the embodiment described herein, the support can move along the direction D1, for example, can have a translational movement along the direction D1. The support can move back and forth along the direction D1. In addition, the cooling system may be rotated at an angle of about 180° with respect to a rotation axis, for example, the rotation axis is orthogonal to the support. This can be used to lower the temperature of the second substrate or the second shield on the opposite side of the vacuum chamber.

According to some embodiments, the cooling system can be connected to at least one support (as shown in Figure 5A). The cooling system may be connected to at least one support. As described herein, at least one support member may be provided in the vacuum chamber.

Figure 5A shows a schematic top view of an apparatus for material deposition on a substrate according to the embodiment described herein. The apparatus 300 includes a deposition source 301 for material deposition on a substrate 302 in a deposition area 303. A cooling system 304 includes an active cooling device 305 having an actively cooled first surface 306 configured to transfer at least part of the cooling load CL away from the deposition area 303, especially from The mask is transferred away, and a support 307 for supporting the deposition source 301 and the cooling system 304, and the support 307 is configured to move the deposition source 301 and the cooling system 304 along the deposition area 303. In addition, the device 300 may include an alignment unit 314 (for example, an alignment device) and a controller for monitoring the alignment device. The controller is used to align the substrate 302 with respect to the mask.

Furthermore, the deposition source 301 may refer to an evaporation source. As exemplarily shown in FIG. 5A, the deposition source 301 may refer to an evaporation source including an evaporation crucible and a distribution pipe. The distribution pipe may be provided with a plurality of outlets, especially along the length of the distribution pipe. The deposition source may be suitable for, that is, configured to deposit a single material.

As exemplarily shown in Figure 5A, the deposition source 301 may refer to an evaporation source array including two or more evaporation crucibles and two or more distribution pipes (not shown), wherein the two or more evaporation crucibles It can be configured to evaporate two or more materials, such as organic materials. Furthermore, the two or more distribution pipes can be provided with outlets (not shown) along the length of the two or more distribution pipes, wherein the first distribution pipe of the two or more distribution pipes can be connected to the two or more evaporation pipes. The first evaporation crucible of the crucible is fluidly connected. This "deposition source" is particularly suitable for, that is, configured to deposit two or more materials on a substrate.

As exemplarily shown in FIG. 5A, the support 307 may be configured to move along a rail 308. The deposition source 301 and the cooling system 304 can move back and forth along the first direction D1, as shown by the arrow 392. Furthermore, the deposition source 301 and the cooling system 304 can be moved by an angle, such as 180°, to process a second substrate, as shown by an arrow 394. The second substrate may be opposite to the first substrate. Placing the cooling system 304 and the deposition source 301 on the same support 307 allows the cooling load CL to be transferred immediately after the thermal load is transferred to the deposition area 303 by the deposition source 301.

In an embodiment that can be combined with the embodiments described herein, the support 307 can move back and forth along the direction D1, and/or the deposition source and the cooling system can rotate about an angle of about 180° around the axis. Accordingly, the deposition source and the cooling system, such as the outlet of the deposition source, can define an annular track around the direction D1 (not shown in Figure 5A).

In addition, the deposition area 303 exemplarily shown in FIG. 5A may include a substrate device, and the substrate device includes a substrate carrier 310 that holds the substrate 302. Furthermore, the deposition area 303 may include a mask device, and the mask device includes a mask carrier 312 holding the mask 313. As shown in FIG. 5A, the mask device, especially the mask 313, may be disposed between the substrate device (especially the substrate 302) and the cooling system 304.

The actively cooled first surface 306 may be cooled at a temperature T1 to give a temperature TD relative to the deposition area 303, in particular a temperature gradient ΔTD relative to the mask temperature. At least part of the cooling load CL may be absorbed by the actively cooled first surface 306 and then transferred away from the deposition area 303, in particular from the mask device 311.

As described above, the actively cooled first surface 306 may be made of a high-emissivity material, such as a high-emissivity ceramic, especially an emissivity defined in this way, which can increase the absorbed cooling load CL And can advantageously improve the pixel accuracy in OLED display manufacturing.

In an embodiment that can be combined with the embodiment described herein, the cooling system 304 exemplarily shown in FIG. 5A may be any cooling system corresponding to the present disclosure, especially as shown in FIGS. 1 to 4. The cooling system shown.

In an embodiment that can be combined with other embodiments described herein, the cooling system 304 can be configured such that, for example, when the support 307 moves along the direction D1, the actively cooled first surface 306 can deposit the area 303 The cooling load at the place is transferred away. Alternatively or in addition, the cooling system 304 may be configured such that, for example, when the support moves along the direction D1, the actively cooled first surface 306 can transfer the cooling load away from the deposition area 413 and cool the deposition area 413 At least one of the deposition regions 413 is arranged parallel to the fourth direction D4.

According to some embodiments of the present disclosure, processing systems each having a vacuum chamber or a deposition device configured in a cluster-type device are described. This may be particularly beneficial for the manufacturing process of the three primary color OLED, that is, the substrate and the shadow mask in the manufacturing process are fixed, for example, for the purpose of pixel accuracy. The embodiments of the present disclosure are also applicable to white OLED applications. For example, the application of white OLEDs can be used for lighting applications and applications that use OLED light as a TV backlight. Such applications may have an edge repelling mask or a mask separation device (instead of a shadow mask) fabricated on a large area substrate. However, in view of the increased deposition rate, the thermal load provided to the substrate and/or mask has also increased. For example, the high throughput of substrates in the system may lead to an increase in the enthalpy of evaporation. Furthermore, the idle time when the substrate is not processed and, for example, is transported in the system is reduced. In view of this, the heating of the substrate and/or the heating of the mask may be significant. Therefore, according to the embodiments described herein, the in-line deposition system can be advantageously used to remove the cooling load from the substrate and/or the mask.

Figure 5B shows a processing system 500. Two or more deposition devices 510 are arranged in a straight line. For example, the two or more deposition devices may be provided adjacent to each other. The deposition apparatus 510 may include a vacuum chamber 10. One or more deposition sources 301 may be included in the vacuum chamber 10. For example, each deposition source in an adjacent deposition apparatus may provide a layer by layer of organic material. According to an embodiment, as exemplarily shown in FIG. 5B, the deposition source 301 or multiple deposition sources may be static in the vacuum chamber or multiple vacuum chambers. Through the processing system 500, the substrate 302 can be transferred or transported along the transport track 575, for example, together with the mask 313.

According to the embodiment described here, an active cooling device having the first surface 306 may be provided in the vacuum chamber 10. For example, one or more active cooling devices may be provided beside the deposition source 301. Accordingly, while the substrate and/or the mask are moving through the deposition source, one or more active cooling devices can be used to remove the thermal load provided to the substrate and/or the mask from the substrate and/or the mask. Accordingly, a cooling system for cooling the deposition area provided in the vacuum chamber can be provided. The cooling system includes an active cooling device. The active cooling device includes a first surface and a second surface; the first surface is disposed between the second surface and the deposition area, and a heat exchanger is configured to It is used to actively cool the first surface by transferring heat away from the first surface. According to still further embodiments that can be combined with other embodiments described herein, other modifications, features, details, and aspects of the cooling system and/or active cooling device may be exemplarily shown in FIG. 5B Used in the in-line deposition system. However, compared to the active cooling device used for three primary color OLED applications, the active cooling device used for an incoming line system can be static, where the substrate and the mask are static. A cooling system with an active cooling device has a first surface. This cooling system can offset the increased heat load transferred from the source to the substrate and/or the shield due to high-volume manufacturing, especially in a short time.

Figure 6 shows a device for material deposition on a substrate according to the embodiment described here. For example, this device is a device with a static substrate mask. The device 400 includes a deposition source 401 for material deposition on a substrate 402 in a deposition area 413, a cooling system 414 of a first active cooling device 415 with an actively cooled first surface 416, and a cooling system 414 configured to A heat exchanger 417 that transfers heat away from the actively cooled first surface 416. The actively cooled first surface 416 is configured to transfer a cooling load away from the deposition area 413, particularly from the mask, and The heat exchanger 417 with a second active cooling device 418 is configured to reduce the heat radiation from the deposition source 401.

In the present disclosure, a "cooling device" can be defined as being adapted, that is, configured to reduce the thermal radiation from the deposition source, especially the thermal radiation emitted from the deposition source toward the deposition area, and more particularly toward the mask And/or the thermal radiation emitted by the substrate. In other words, the cooling device can be defined as a "cooling shielding device", this cooling shielding device protects the deposition area from the thermal radiation emitted by the deposition source, especially the substrate and/or the shield from the deposition source. Heat radiation.

In addition, the "cooling device" according to the present disclosure can be further defined as including a second active cooling device, which can be activated by a cooling medium. For example, the second active cooling device may refer to a double wall, in which a cooling medium (for example, cooling water) can flow between the two layers to cool the second active cooling device.

As exemplarily shown in Figure 6, the deposition source 401 may refer to two or more evaporators, that is, two or more evaporation crucibles (not shown). Furthermore, the two or more evaporation crucibles may include two or more distribution pipes 4012. Two or more distribution pipes 4012 as depicted in Figure 6 may advantageously have a triangular shape so as to be arranged adjacent to each other in an effective manner. The deposition efficiency of these two or more materials can be advantageously improved.

In some embodiments, the two or more distribution tubes 4012 may have any other shape, such as a cylindrical shape, so as to allow the deposition of two or more materials, particularly the simultaneous deposition of two or more materials.

Furthermore, the two or more distribution pipes 4012 may be heated by one or more heating elements 450. One or more heating elements 450 may be provided at the outer wall of one or more distribution pipes 4012. The one or more heating elements 450 may correspond to electric heaters installed on the walls of the two or more distribution pipes 4012. For example, one or more heating elements 450 may be provided by an electric heating wire (for example, a coated electric heating wire), and the electric heating wire is clamped or fixed on two or more distribution pipes 4012 in other ways.

In addition, the two or more distribution pipes 4012 may have one or more outlets 4013. The one or more outlets 4013 are provided along the length of the two or more distribution pipes 4012. The first distribution pipe may be fluidly connected to a first evaporation crucible (not shown) of two or more evaporation crucibles (not shown).

One or more outlets 4013 of the two or more distribution pipes 4012 can be one or more openings or one or more nozzles, and the one or more openings or one or more nozzles can be, for example, provided in a nozzle or another A vapor distribution system. The deposition source 401 may include a vapor distribution nozzle, such as a linear vapor distribution head having a plurality of nozzles or openings. Here, the spray head can be understood as including a housing with an opening, so that the pressure in the spray head is higher than the pressure outside the spray head, for example, at least one order of magnitude higher.

As exemplarily shown in Figure 6, the second active cooling device 418 may be provided on at least one side of two or more distribution pipes 4012, and this at least one side may be provided on one or more outlets 4013. .

Furthermore, the second active cooling device 418 may include one or more shaped shields, or may be provided with one or more shaped shields. As exemplarily shown in FIG. 6, two shaped shields 4181 may be provided in the second active cooling device 418, and these shaped shields 4181 are especially attached to the second active cooling device 418. The shaped shadow 4181 may extend from a part of the deposition source toward the deposition area 413. Two shaped shields 4181 and a second active cooling device 418 can be configured to provide U-shaped cooling thermal shields to reduce heat radiation toward the deposition area (that is, the substrate and/or the shield).

As exemplarily shown in FIG. 6, arrows 3, 4, and 5 respectively illustrate the evaporated organic material leaving from two or more distribution pipes 4012. Due to the substantially triangular shape of the distribution pipe 4012, the evaporation cones derived from the two or more distribution pipes 4012 can be in close proximity to each other, so that the mixing of organic materials from the two or more distribution pipes 4012 can be improved.

Accordingly, it is possible to control the direction of the evaporated material existing in the first distribution pipe or the two or more distribution pipes 4012 and passing through the outlet 4013, that is, the emission angle of the vapor can be advantageously reduced.

In addition, the shaped shield 4181 may be configured as a distribution cone for restricting the organic material distributed toward the deposition area 413 (for example, a substrate), that is, the shaped shield 4181 may be made to block at least a part of the organic material. The width of the emission angle can be advantageously controlled.

In addition, the shaped shield 4181 may be cooled to further reduce the heat radiation emitted toward the deposition area 413, that is, reduce the heat radiation emitted from the deposition source 401 toward the deposition area 413. Furthermore, the second active cooling device 418 may be activated by a cooling medium 419 selected from the following group: water, oil, and glycol. The cooling medium 419 may be provided at or in the second active cooling device 418, and may be suitable for, that is, suitable for actively cooling the second active cooling device 418.

As exemplarily shown in Figure 6, the actively cooled first surface 416 may be disposed in the deposition area 413 (especially the mask and/or substrate) and the heat exchanger 417 (especially the second active cooling device 418) between.

In an embodiment that can be combined with the embodiment described herein, the cooling system 414 may be disposed between the heat exchanger 417 and the deposition area 413. By providing the device 400 having the configuration as described herein, at least part of the cooling load CL can be reduced, and the pixel accuracy can be further improved, and in particular, the manufacturing of OLED displays can be advantageously improved.

The cooling system 414, the actively cooled first surface 416, and the heat exchanger 417 as exemplarily shown in Figure 6 can be independently used as cooling systems, as exemplarily shown in Figures 1 to 4 above. Actively cooled first surface and heat exchanger. In particular, the cooling system 414 may correspond to the cooling system described herein, especially the cooling system described here, especially in view of FIGS. 1 to 4.

In addition, the device 400 may include one or more thermal shields 420 surrounding at least the first distribution pipe as described herein, in particular two or more thermal shields, such as five or more thermal shielding layers, such as ten thermal shields. Masking layer. Two or more heat shields 420 may be configured to reflect heat back to the center of the first distribution pipe and advantageously reduce heat loss toward the environment. Furthermore, two or more heat shields 420 may be arranged on one side of one or more outlets 4013, and an opening 4191 may be provided at the position of one or more outlets 4013 of the two or more distribution pipes 4012.

Furthermore, an evaporator control housing (not shown) can be provided adjacent to two or more distribution pipes, and the two can be connected through an insulator (not shown). As described above, the evaporator control housing adapted to maintain atmospheric pressure therein may be configured to accommodate at least one element selected from the following group: a switch, a valve, a controller, a cooling unit, and a cooling control unit , A heating control unit, a power supply and a measuring device.

Fig. 7 shows an apparatus for material deposition on a substrate according to the embodiment of Fig. 6, and Fig. 6 particularly illustrates heat transfer that may occur during operation. As exemplarily shown in FIG. 7, the arrow 6 shows the heat radiation emitted from the deposition source 401, especially the heat radiation emitted from two or more distribution pipes 4012. The two or more thermal shields 420 may be, adapted, that is, configured to reflect at least part of the thermal radiation, particularly toward the center of the deposition source 401, and more particularly toward each of the two or more distribution pipes 4012. The center of the piping reflects.

Furthermore, the heat exchanger 417 can at least partially collect the part of the heat radiation that is not reflected by the two or more heat shields 420. In particular, at least part of the non-reflected heat radiation may be collected in the second active cooling device 418. The second active cooling device 418 can be actively cooled by the cooling medium 419 (for example, cooling water). The non-reflected heat radiation can be advantageously reduced, especially the heat radiation toward the deposition area 413, and more particularly the heat radiation toward the mask and/or the substrate.

In the present disclosure, the term "non-reflected thermal radiation" can be understood as referring to the thermal radiation transferred to the part outside the deposition source 401, especially the thermal radiation outside the two or more distribution pipes 4012.

As exemplarily shown in FIGS. 6 and 7, arrows 3, 4, and 5 illustrate the transportation of evaporated organic material from two or more distribution pipes 4012 to the deposition area 413 through the outlet 4013. As described above, the U-shaped cooling shield provided by the two shaped shields 4181 and the second active cooling device 418 can define the distribution cone of the organic material distributed toward the deposition area 413. In addition, the U-shaped cooling heat shield may be configured to be cooled by the cooling medium 419 and advantageously reduce heat radiation toward the deposition area 413.

The transport of the evaporated organic material to be deposited on the substrate in the deposition area can impart a heat load, especially due to the thermal radiation carried by the evaporated organic material. The deposition area, such as the substrate and the mask, can withstand the thermal load defined here, and in particular will be negatively affected and damaged.

The thermal load as described herein may refer to the cooling load defined above. In this disclosure, the terms "cooling load" and "heat load" can be used interchangeably, because the two have the same meaning, that is, the two have the same technical meaning.

In view of this, by providing a device 400 having a cooling system 414 as described herein, the device 400 particularly includes a first active cooling device 415 having a first surface 416 that is actively cooled, and is configured to remove heat from The actively cooled first surface 416 is transferred away from the heat exchanger 417. The actively cooled first surface 416 is configured to transfer the cooling load CL away from the deposition area 413, especially from the mask, which can further reduce negative effects. Affected heat load. The device 400 can advantageously improve pixel accuracy in the manufacture of an OLED display.

In particular, the cooling system 414 may be used as the cooling system described herein, and in particular, the cooling system 414 may correspond to the cooling system according to the embodiments shown in FIGS. 1 to 4.

The actively cooled first surface 416 may be disposed between the second active cooling device 418 and the deposition area 413, as shown in FIG. 7. As indicated by the arrow (transfer 2) in Figures 3A and 7, heat transfer from the deposition area to the cooling system, that is, transfer 2 of the cooling load CL can occur. As shown in FIG. 7, the cooling load CL can be transferred from the deposition area 413 (especially the position of the mask and/or the substrate) toward the actively cooled first surface 416.

Heat transfer can be caused by the temperature gradient, which is the temperature gradient ΔTD (°C) defined here, especially due to the temperature difference between the temperature TD of the deposition area 413 (especially the temperature of the mask), and active cooling The first surface 416 has a temperature T1. The substrate and/or the mask in the deposition area 413 may be less affected by the thermal load as described herein, and the thermal load is particularly derived from the thermal radiation emitted by the deposition source 401.

In view of this, by providing the cooling system 414 between the deposition area 413 and the heat exchanger 417, the cooling load CL can be further reduced, and the pixel accuracy in the manufacture of the OLED display can be advantageously improved.

FIG. 8 shows the device according to the embodiment of FIG. 7, and the cooling system 414 further includes a third active cooling device 460. As exemplarily shown in Figure 8, the first active cooling device 415 and the third active cooling device 460 can be arranged on both sides relative to the position of the one or more outlets 4013, especially relative to the one or more outlets. The 4013's axial nozzle is symmetrical.

With the above configuration, at least one of the first active cooling device 415 and the third active cooling device 460 may be configured to cool the deposition area 413 before material deposition may occur. It is possible to pre-compensate for the thermal load subsequently emitted by thermal radiation during deposition. In addition, at least one of the first active cooling device 415 and the third active cooling device 460 may be configured to further cool the deposition area 413 after material deposition may occur. It is possible to at least reduce the heat load emitted by the heat radiation during the material deposition, and it is preferable to completely transfer the heat load away from the deposition area 413. By providing the third active cooling device 460 as described herein, the cooling load CL transferred away from the deposition area 413 can be increased, and the pixel accuracy in the OLED display manufacturing can be further improved.

In an embodiment that can be combined with other embodiments described herein, the first active cooling device and the third active cooling device may be the same in terms of structure and function. In particular, at least one of the first active cooling device and the third active cooling device may correspond to the cooling system as illustrated in FIGS. 1 to 4 and described herein.

Alternatively, the first active cooling device and the third active cooling device may be different from each other, especially in terms of structure, heat transfer capability, and function according to the requirements of the material deposition device that can be provided in advance.

FIG. 9 shows the device according to the embodiment of FIG. 8. The cooling system 414 may further include a fourth active cooling device 470. In addition, the device 400 may further include a support 307 as shown in FIG. 6. As exemplarily shown in FIG. 8, the fourth active cooling device 470 may be arranged behind the deposition source 401. In the present disclosure, the term “behind” may refer to the side of the deposition source opposite to the side where one or more outlets 4013 may be arranged. The "rear" side of the deposition source 401 can be further defined as the side without outlets and opposite to the side with one or more outlets. According to embodiments that can be combined with other embodiments described herein, a cold surface can be provided on the front side and/or the back side of the deposition source 401.

As shown in FIG. 9, the fourth active cooling device 470 may have a length, which is substantially approximately the length of the deposition source 401. Alternatively, the fourth active cooling device may include one or more active cooling devices, especially the active cooling devices described herein.

Furthermore, the support 307 may be suitable, that is, configured to support and move the deposition source 401, the heat exchanger 417, and the cooling system 414, respectively.

With the above configuration, when the support 307 moves along the annular track 308, the fourth active cooling device may be configured to cool at least the deposition area and transfer the cooling load CL away from the deposition area, which is particularly set Another deposition area on the opposite side of a deposition area that is subject to material deposition. For example, during the deposition of the material in the deposition area 413, when the support 307 moves along the direction D1 along the circular track 308, the fourth active cooling device may be configured to cool the deposition area 480 and/or cool down the The load is transferred away from the deposition area 480. In another example, during the deposition of the material in the deposition area 480, when the support 307 moves along the circular track 308 in the fourth direction D4, the fourth active cooling device may be configured to remove the cooling load CL from The deposition area 413 passes away.

In embodiments that can be combined with other embodiments described herein, the vacuum chamber may include only one deposition area. The fourth active cooling device as described herein can advantageously increase heat transfer toward the rear of the deposition source and reduce heat radiation toward the deposition area.

By providing the fourth active cooling device 470, the cooling load at the deposition area can be further reduced, and the pixel accuracy in the manufacturing of the OLED display can be further improved.

According to yet another aspect of the present disclosure, a method for material deposition on a substrate in a deposition area is provided. A method for material deposition on a substrate in a deposition area, including at least one of the following: maintaining a temperature gradient ΔTD over time between a deposition area provided with a substrate and a first surface of a cooling system; and Keep the average temperature TD of the deposition area (especially the mask) substantially constant; use the cooling system to transfer the cooling load CL away from the deposition area, especially from the mask.

In the following, the term “first surface of the cooling system” can be understood to mean at least one of the “first surface” and “actively cooled first surface” as described herein. Furthermore, the "first surface" may be the "actively cooled first surface" as described herein, especially as described in the embodiments of FIGS. 1-9.

As has been described in the embodiment with reference to FIG. 3A, it is possible to maintain a temperature gradient ΔTD over time by using, for example, an actively cooled first surface.

This method may include providing at least one of a temperature gradient ΔT of 40°C or more, particularly 120°C or more, more particularly 220°C to 500°C, and a substrate of 23°C to 30°C, and / Or the average temperature of the mask.

By providing the temperature gradient ΔTD over time, at least the cooling load CL as described herein can be reduced over time, preferably substantially completely transferred away from the deposition area, and the pixel accuracy in OLED display manufacturing can be improved.

According to another aspect of the present disclosure, there is provided a material deposition method on a substrate in a deposition area. FIG. 10 shows a flowchart of a method 600 of material deposition on a substrate in a deposition area according to an embodiment described herein. Method 600 includes: t _x during the deposition source 601 moves along the substrate at a first time period; a first time period t in the second time period t _{x Y} 602 during the cooling substrate; and a first time period t of an _x During the third time period t _z , the material 603 is deposited on the substrate. During the third time period t _z , the deposition area temperature TD, especially the temperature of the substrate and/or the mask, increases.

The method 600 according to the embodiment described here can be performed in a vacuum chamber as described above, and can include at least one of the following: the movement 601 can be achieved by using the support as described above; the cooling 602 can be performed by The active cooling of the first surface, the cooling system, and the device described herein are performed, especially referring to the embodiments of FIGS. 1-9; the deposition 603 can be performed by using the deposition source as described herein.

In the present disclosure, the “first time period t _x ”can be understood to refer to the time period during which the deposition source moves 601, especially the time period during which one or more deposition areas in the vacuum chamber are moved, more particularly Is the period of time moving along the circular track as described here.

Furthermore, the "second time period t _y "can be understood as a time period during which cooling may occur, and the second time period t _y is within the first time period t _x . In other words, the second time period may be less than or equal to the first time period t _x . Additionally or alternatively, the cooling 602 during the second time period t _y may be performed by at least one of the actively cooled first surface, the cooling system, and the device as described herein. The second time period t _y may refer to a time period during which at least one of the actively cooled first surface, the cooling system, and the device can be operated.

In this disclosure, the “third time period t _z ”can be understood as a time period during which material deposition can occur, and the third time period t _{z is} within the first time period t _x . In other words, the third time period t _z may be less than or equal to the first time period t _x . Additionally or alternatively, the deposition 603 during the third time period t _z may be performed by at least one of the deposition source and the device described herein. The third time period t _z may refer to a time period during which at least one of the deposition source and the device can be operated.

In particular, the method 600 may include cooling 602 and deposition 603 in its sequence. The deposition source may move during the first time period t _x . During the second time period t _y , the deposition area may be cooled first, particularly the substrate and/or the mask, especially using at least one of the first surface, the cooling system, and the device that is actively cooled as described herein Come to cool down. The deposition area can be advantageously cooled in order to at least partially upfront to compensate for the subsequent cooling load CL given during the deposition of the material in the third time period t _z .

In particular, the method 600 including the cooling 602 and the deposition 603 can be operated in this order by the apparatus described herein, especially having one or more deposition sources as described above arranged in at least one direction D1 The device of the first active cooling device at the "upper front" of the exit. In the following, the term "upper front" can be understood to mean "downstream" of one or more outlets with respect to at least one direction D1. In other words, the first active cooling device may be arranged between one or more outlets and a forward position along at least one direction D1.

In some embodiments, deposition 603 may occur before cooling 602. The deposition area, especially the substrate and/or the mask, may be heated first during the deposition of the material in the second time period t _y . Since the deposition source emits heat radiation toward the deposition area, a cooling load CL can be given. Subsequently, cooling may occur at t _z the third period, during which may at least partially be transferred away from the cooling load CL from the deposition zone. At least the cooling load CL at the deposition area can be reduced, and the pixel accuracy in OLED display manufacturing can be further improved.

In particular, the method 600 including deposition 603 and cooling 602 can be operated in this order by the apparatus described herein, particularly with one or more outlets of the deposition source arranged in at least one direction D1. "Back" is the first active cooling device. In the following, the term "rear" may be understood to mean "upstream" of one or more outlets with respect to at least one direction D1. In other words, the first active cooling device may be arranged between one or more outlets and a backward position along at least one direction D1.

Figure 11 shows a schematic diagram of temperature fluctuations at the deposition area (especially at the mask and/or substrate) over time. The temperature at the deposition area may fluctuate over time, and in particular, it may fluctuate around an average constant temperature TDa as shown by the horizontal dashed line in FIG. 11. The temperature TDa may advantageously be a predetermined temperature, for example about 25°C. The tolerance or variation of the predetermined temperature may be, for example, +/-1°C.

A cooling system as described herein may be provided, the cooling system having a first surface that is actively cooled, and the cooling system is configured to maintain the temperature TD constant over time substantially at the temperature TDa. For example, during material deposition, when the deposition area is heated, the actively cooled first surface may perform at least one of cooling the deposition area and transferring at least part of the cooling load away from the deposition area. In other words, the deposition area may be the cooling system, in particular the first surface being actively cooled, forcibly returning to the average constant temperature TDa as described herein.

As exemplarily shown in Figure 11, the surface area 501 (see Figure 10) may be used to represent the heated surface area given by the thermal radiation of the deposition source during the deposition of the material. Further, for example, the cooling surface area given by the cooling of the cooling system (especially the first surface that is actively cooled) may be represented by the surface area 502.

In some embodiments, the surface area 502 may be substantially equal to the surface area 501. The cooling load CL may be substantially completely transferred away from the deposition area. In embodiments that can be combined with the embodiments described herein, the surface area 502 may be equal to 90% to 110% of the surface area 501.

According to the embodiment described here, by, for example, the first surface of the active cooling device, the heat load transferred to the mask and/or the substrate can be removed as a cooling load. It is advantageous to remove all the heat load as a cooling load to have a stable temperature (for example, in the range of ±1°C). As described above, the cooling load may be affected by the temperature of the first surface and the area of the first surface. For example, the area of the first surface of the active cooling device or the total area of the cooling surface (such as the first surface) may be 10% to 50% of the surface area of the mask and/or the surface area of the substrate.

In view of this, the cooling load CL can be further reduced, and the pixel accuracy in OLED display manufacturing can be advantageously improved.

As shown in FIG. 12, the method 600 may further include cooling 604 the deposition area, particularly the substrate and/or the mask, during a fourth time period t _q together with the first time period t _x . The "fourth time period t _q "can be understood as a time period during which cooling can occur, and the fourth time period t _q is within the first time period t _x . In other words, the fourth time period may be less than or equal to the first time period t _x . Additionally or alternatively, cooling 604 may be performed during the fourth time period t _q by at least one of the actively cooled first surface, cooling system, and device described herein. The fourth time period t _q may refer to a time period during which at least one of the actively cooled first surface, the cooling system, and the device can be operated during the method 600.

In particular, the fourth time period t _q satisfy at least one of the following: t _y occurs after a second period, a second period of time partially overlap portion T _y, T _y and the second time period as long as, and It is longer or shorter than the second time period t _y . For example, the first active cooling device as described herein can be used to operate the cooling 602 during the second time period t _y , and the third active cooling device and the fourth active cooling device as described herein can be used. At least one operates the cooling 604 during the fourth time period. In other words, the method 600 including cooling 602 and further cooling 604 can be operated by the device as described herein, especially by having the first active cooling device and the third active cooling device as described herein Of the cooling system to operate.

As shown in FIG. 13, the method 600 may include a cooling period t _r deposition zone 605 and the fifth time period a first time period t _X together, in particular the substrate and / or mask. The “fifth time period t _r ”can be understood as a time period during which the cooling 605 can occur, and the fifth time period t _r is within the first time period t _x . In other words, the fifth time period t _r may be less than or equal to a first time period t _x. At least one addition or alternatively, said first surface herein by active cooling, the cooling system, and to perform a cooling apparatus 605 t _r during the fifth time period. Fifth time period t _r may refer to during the method 600, during a time period of at least one of the first surface, a cooling system, and the active cooling apparatus may be operated.

In particular, the fifth time period t _r may satisfy at least one of the following: occurs after the second time period t _y and/or the fourth time period t _q , and is partially related to the second time period t _y and/or fourth time period t _q. partially overlaps a time period t _q, t _y and the second time period and / or the fourth time period as long as t _q, and t _y, and / or the fourth time period t _q longer or shorter than the second period. For example, a first active cooling device as described herein may be used to operate cooling 602 during the second time period t _y , and a third active cooling device as described herein may be used to operate during the fourth time period cooling 604, and a fourth active cooling device may be used as described herein to operation of the cooling period _r t 605 in the fifth period. In other words, the method 600 including cooling 602, cooling 604, and cooling 605 can be operated by the device as described herein, especially by having the first active cooling device, the third active cooling device as described herein The cooling device and the cooling system of the fourth active cooling device operate.

More specifically, the method 600 according to the embodiment of FIG. 13 may be operated by the apparatus described herein, which has a first active cooling device disposed on both sides of the deposition source relative to one or more outlets and A third active cooling device, and a fourth active cooling device arranged behind the deposition source as described herein.

In the present application, a first time period t _x, the second time period t _y, the third time period t _z, the fourth time period t _q, t _r and the fifth time period may be a time period refers to a continuous or discontinuous The sum of time periods. For example, the vacuum chamber includes n deposition regions, and when n is greater than 2, the third time period t _z for deposition may include a first discontinuous third time period t _z1 and a second discontinuous third time period t _z2 respectively correspond to the first deposition area and the second deposition area. This is a first time period t _x, the second time period t _y, the fourth time period t _q, and fifth time period t _r is equally applicable.

In the embodiment may be combined with embodiments described herein in the embodiment, as described herein according to embodiments, the second time period t _y, the fourth time period t _q, t _r fifth time period and at least one During this period, cooling the deposition area (especially the substrate) may include transferring at least part of the cooling load away from the deposition area, especially away from the mask.

In an embodiment may be combined with embodiments described herein, the "cooling time" will be understood to mean a second time period t _y, the fourth time period t _q, t _r fifth time period and at least one of . In addition, the cooling time may be substantially the same as the deposition time. For example, the length along the transport direction of the cold surface may be 100 mm or more, and/or 800 mm or less. For example, the cold surface may be one surface (see, for example, the fourth active cooling device 470 in FIG. 9 or may be divided into two or more actively cooled first surfaces 416).

According to embodiments that can be combined with the embodiments described herein, the method of the present disclosure may include at least 3n cooling stages for a vacuum chamber including n deposition regions, where n is an integer.

According to a further aspect of the present disclosure, the vacuum chamber can be understood as a vacuum processing system for vacuum processing one or more substrates. The vacuum processing system may further include one or more pressure regulators, one or more valves, ultimately a compressor, one or more mass flow controllers, and one or more proportional valves. According to yet a further aspect of the present disclosure, a method for vacuum processing one or more substrates is provided. This method can be performed by hardware components, a computer programmed by appropriate software, by any combination of the two, or in any other way.

Although the above content is about the embodiments of the present disclosure, other and further embodiments of the present disclosure can be designed without departing from the basic scope, and the scope of the embodiments is determined by the following patent application scope.

In particular, the description described here uses examples to expose the present disclosure, including the best mode, and also enables any person skilled in the art to practice the described subject matter, including manufacturing and using any equipment or system, and performing any combined method . Although various specific embodiments have been disclosed above, mutually exclusive features of the above embodiments can be combined with each other. The scope of patentability is limited by the scope of the patent application, and if the scope of the patent application does not have structural elements different from the language of the patent application, or if the scope of the patent application includes the equivalent of the language of the application patent. Other examples should be within the scope of the patent application.

1: Arrow 2: Transfer 3, 4, 5, 6: Arrow 10: Vacuum chamber 11: Deposition area 100: Cooling system 110: Active cooling device 111: First surface 112: Second surface 113: Heat exchanger 200: Cooling system 201: support 202: annular track 300: device 301: deposition source 302: substrate 303: deposition area 304: cooling system 305: active cooling device 306: first surface 307: support 308: rail 310: substrate carrier 312 : Mask carrier 313: Mask 392, 394: Arrow 401: Deposition source 4012: Distribution pipe 4013: Outlet 413: Deposition area 414: Cooling system 415: First active cooling device 416: First surface 417: Heat exchanger 418 : Second active cooling device 4181: forming shield 419: cooling medium 450: heating element 460: third active cooling device 470: fourth active cooling device 500: processing systems 501, 502: surface area 510: deposition equipment 575: rail 600: Method 601: Movement 602: Cooling 603: Deposition 604: Cooling 605: Cooling T1, T2, TD, TDa: Temperature ΔTH, ΔTD: Temperature Gradient CL: Cooling Load D1: Direction D2: Second Direction D3: Third Direction D4: Fourth direction t _x : first time period t _y : second time period t _z : third time period t _z1 : first discontinuous third time period t _z2 : second discontinuous third time period t _q : first four time period t _r: fifth time period

In order to understand the details of the above-mentioned features of the present invention, reference may be made to the embodiments to obtain a more detailed description of the present invention briefly summarized above. The attached drawings are about the embodiments of the present invention and are described as follows: Figure 1 shows a schematic top view of a cooling system provided in a vacuum chamber according to the embodiment described herein. Figure 2 shows the cooling system according to Figure 1, and further illustrates the heat transfer from the first surface to the second surface. Figure 3A shows the cooling system according to Figure 1, further showing a first surface for active cooling, the first surface being configured to transfer at least part of a cooling load away from the deposition area; Figure 3B shows the cooling system according to Figure 3A, showing the first surface with a high emissivity active cooling according to the embodiment described herein; Figure 4A shows a top view of a cooling system, which further includes at least one support according to the embodiment described herein. Figure 4B shows a top view of a cooling system that includes at least one support according to the embodiments described herein. Figure 5A shows a top view of an apparatus for material deposition in a deposition area according to embodiments described herein. FIG. 5B shows a top view of a processing system (that is, in-line equipment) for material deposition according to the embodiment described herein. Figure 6 shows a top view of an apparatus for material deposition in a deposition area according to embodiments described herein. Figure 7 shows the device of Figure 6, further illustrating the heat transfer during operation. Fig. 8 shows the device of Figs. 6 and 7. The cooling system further includes a third cooling device. Figure 9 shows the device of Figure 8 with a support, and the cooling system further includes a fourth cooling device. Figure 10 shows a flow chart of the material deposition method according to the embodiment described herein; Figure 11 shows a schematic diagram of temperature fluctuations at the deposition area over time according to the embodiment described herein; Figure 12 shows the method of Figure 10, which method includes cooling during a fourth period of time according to embodiments described herein. Figure 13 shows the method of Figures 10 and 12, which includes cooling during a fifth time period according to the embodiment described herein.

300: device

301: Sediment Source

302: substrate

303: Deposition Area

304: cooling system

305: Active cooling device

306: First Surface

307: Support

308: Orbit

310: substrate carrier

312: Mask Carrier

313: Mask

392, 394: Arrows

Claims (20)

A cooling system for cooling a deposition area in a vacuum chamber includes: An active cooling device, comprising a first surface and a second surface, the first surface is disposed between the second surface and the deposition area; and A heat exchanger is configured to actively cool the first surface by transferring a heat away from the first surface. The cooling system according to claim 1, wherein the heat exchanger is configured to actively cool the first surface by transferring the heat from the first surface to the second surface. The cooling system described in claim 1, wherein the heat exchanger is configured to cool the first surface to a temperature lower than 20°C. The cooling system described in item 2 of the scope of patent application, wherein the heat exchanger is configured to cool the first surface to a temperature lower than 20°C. The cooling system as described in item 1 of the scope of patent application, wherein the heat exchanger is selected from the following group: low temperature cooler, refrigerator, and thermoelectric device. The cooling system as described in item 2 of the scope of patent application, wherein the heat exchanger is selected from the following group: low temperature cooler, refrigerator, and thermoelectric device. The cooling system described in item 3 of the scope of patent application, wherein the heat exchanger is selected from the following groups: low temperature coolers, refrigerators, and thermoelectric devices. The cooling system according to any one of items 1 to 7 in the scope of patent application, wherein the first surface has an emissivity greater than 0.5. The cooling system according to any one of items 1 to 7 in the scope of patent application, wherein the first surface of the active cooling is configured to transfer at least part of a cooling load away from the deposition area. The cooling system described in any one of items 1 to 7 of the scope of patent application further includes: At least one support, the at least one support is configured to move the active cooling device along the deposition area. The cooling system according to any one of items 1 to 7 in the scope of patent application, wherein the active cooling unit is static in the vacuum chamber. A device for material deposition on a substrate includes: A deposition source for material deposition on a substrate in a deposition area; A cooling system having an active cooling device including an actively cooled first surface for transferring a cooling load away from the deposition area; and A support member is used to support the deposition source and the system, and the support member is configured to move the deposition source and the cooling system along the deposition area. A device for material deposition on a substrate includes: A deposition source for material deposition on a substrate in a deposition area; A cooling system having a first active cooling device, the first active cooling device having a first surface that is actively cooled and a heat exchanger configured to transfer heat away from the first surface , The actively cooled first surface is configured to transfer a cooling load away from the deposition area; and A cooling device has a second active cooling device, and the second active cooling device is configured to reduce heat radiation emitted by the deposition source. The device described in item 13 of the scope of patent application, wherein the first surface of the active cooling is arranged between the second active cooling device and the deposition area. In the device described in claim 14, wherein the first surface of the active cooling is arranged between the second active cooling device and the shield. A method for material deposition on a substrate in a deposition area includes at least one of the following: Maintaining a temperature gradient ΔT (°C) over time between the deposition area and a first surface of a cooling system; and A cooling system is used to transfer a cooling load away from the deposition area, thereby maintaining a substantially constant average temperature of the deposition area. The method described in claim 16, wherein the temperature gradient (°C) is provided at about 50°C, and the average temperature of the mask is provided at 23° to 28°C. A method for material deposition on a substrate, including: moving a deposition source along the substrate during a first time period t _x ; cooling during a second time period t _y in the first time period t _x The substrate; and depositing material on the substrate during a third time period t _z within the first time period t _x , wherein the temperature of the deposition area increases during the third time period t _z . The method described in item 18 of the scope of patent application further includes: cooling the substrate during a fourth time period t _q within the first time period t _x . The method according to claim 18 or 19, wherein cooling the deposition area during the second time period t _y and the fourth time period t _q includes removing at least part of a cooling load from the deposition area Pass away.

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