CN112420782A - OLED display panel and preparation method thereof - Google Patents
OLED display panel and preparation method thereof Download PDFInfo
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The invention provides an OLED display panel and a preparation method thereof. The OLED display panel comprises a substrate base plate, a shading metal layer, a color filter layer, a TFT structure layer, a first transparent electrode layer and a pixel electrode layer, wherein the shading metal layer is located on the substrate base plate and corresponds to a non-luminous area, the color filter layer is located on the substrate base plate and corresponds to a luminous area, the TFT structure layer is located on one side, away from the substrate base plate, of the shading metal layer, the first transparent electrode layer is located on one side, away from the substrate base plate, of the color filter layer, and the pixel electrode layer is located on the. The first transparent electrode layer and the active layer of the TFT structure layer are arranged on the same layer. And in the luminous area, a coupling capacitor is formed between the pixel electrode layer and the first transparent electrode layer. The invention forms a transparent electrode in the luminous zone while forming the active layer, and forms a coupling capacitor with the pixel electrode layer on the top, thereby saving an electrode process.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED display panel and a preparation method thereof.
Background
The AMOLED display panel is a development trend of the panel industry, and compared with a liquid crystal display panel, the OLED display panel has the advantages of simple structure, wider color gamut, quicker response time and the like. Currently, the AMOLED display panel is a bottom emission OLED display panel.
According to the bottom light-emitting OLED display panel in the prior art, a layer of electrode is added in a light-emitting area on a substrate to serve as a first electrode plate of a transparent capacitor, an oxide semiconductor layer is simultaneously formed in the light-emitting area while an active layer is formed, the oxide semiconductor layer serves as a second electrode plate of the transparent capacitor, namely, the capacitor area and the light-emitting area are combined, the opening ratio of the panel is improved, then a color filter layer is prepared on the oxide semiconductor layer, and finally a pixel electrode, an organic light-emitting layer and a common electrode are prepared, so that the preparation of the OLED display panel is completed. However, this solution requires an extra layer of electrode, which results in increased production cost, complex process and great difficulty. Therefore, it is necessary to improve this defect.
Disclosure of Invention
The embodiment of the invention provides an OLED display panel, which is used for solving the technical problems of increased production cost, complex process and high difficulty caused by the arrangement of a transparent capacitor in the OLED display panel in the prior art.
The embodiment of the invention provides an OLED display panel, which defines a plurality of pixel regions arranged in an array, wherein each pixel region is divided into a light-emitting region and a non-light-emitting region, and the OLED display panel comprises: the display device comprises a substrate, a shading metal layer, a color filter layer, a TFT structure layer, a first transparent electrode layer and a pixel electrode layer. The shading metal layer is positioned on the substrate and corresponds to the non-luminous area. The color filter layer is positioned on the substrate and corresponds to the light emitting area, and is arranged at intervals with the shading metal layer. The TFT structure layer is positioned on one side of the shading metal layer far away from the substrate base plate. The first transparent electrode layer is positioned on one side of the color filter layer, which is far away from the substrate base plate, and is arranged on the same layer with the active layer of the TFT structure layer. One end of the pixel electrode layer is connected with the drain electrode of the TFT structure layer, and the other end of the pixel electrode layer is connected with the organic light emitting layer of the display panel. And in the luminous area, a coupling capacitor is formed between the pixel electrode layer and the first transparent electrode layer.
In the OLED display panel provided in the embodiments of the present invention, the TFT structure layer further includes a gate insulating layer located above the active layer, a gate electrode located above the gate insulating layer, an interlayer insulating layer located above the gate electrode and the first transparent electrode layer, a source electrode located above the interlayer insulating layer, a passivation layer located above the source electrode and the drain electrode, and a planarization layer located above the passivation layer. In the light emitting area, the pixel electrode layer is located on the inner side of a first groove, and the first groove penetrates through the planarization layer, the passivation layer and a part of the interlayer insulating layer.
In the OLED display panel provided in the embodiments of the present invention, the pixel electrode layer corresponding to the inner side of the first groove includes a second groove, and the organic light emitting layer is located in the second groove.
In the OLED display panel provided in the embodiment of the present invention, the width of the first groove is greater than the width of the organic light emitting layer.
In the OLED display panel provided in the embodiments of the present invention, the material of the first transparent electrode layer includes a conductive indium gallium zinc oxide, an indium zinc tin oxide, or an indium gallium zinc tin oxide.
The embodiment of the invention also provides a preparation method of the OLED display panel, wherein the OLED display panel defines a plurality of pixel regions arranged in an array, each pixel region is divided into a luminous region and a non-luminous region, and the preparation method comprises the following steps: providing a substrate base plate; preparing a shading metal layer on the substrate corresponding to the non-luminous area; preparing a color filter layer on the substrate corresponding to the light emitting region, wherein the color filter layer and the shading metal layer are arranged at intervals; preparing a TFT structure layer on one side of the shading metal layer far away from the substrate; preparing a first transparent electrode layer on one side of the color filter layer, which is far away from the substrate, wherein the first transparent electrode layer and the active layer of the TFT structure layer are prepared on the same layer; preparing a pixel electrode layer on the TFT structure layer and the first transparent electrode layer; and preparing an organic light emitting layer on the pixel electrode layer corresponding to the light emitting region, wherein one end of the pixel electrode layer is connected with the drain electrode of the TFT structure layer, the other end of the pixel electrode layer is connected with the organic light emitting layer, and a coupling capacitor is formed between the pixel electrode layer and the first transparent electrode layer in the light emitting region.
In the preparation method of the OLED display panel provided in the embodiment of the present invention, the step of preparing the TFT structure layer on the side of the light-shielding metal layer away from the substrate includes: preparing an active layer on one side of the light-shielding metal layer far away from the substrate base plate; preparing a gate insulating layer over the active layer; preparing a gate electrode over the gate insulating layer; preparing an interlayer insulating layer over the gate electrode; preparing a source electrode and a drain electrode over the interlayer insulating layer; preparing a passivation layer over the source electrode and the drain electrode; preparing a planarization layer over the passivation layer; and etching the planarization layer, the passivation layer and part of the interlayer insulating layer to form a first groove in the light emitting area, wherein the pixel electrode layer in the light emitting area is positioned at the inner side of the first groove.
In the preparation method of the OLED display panel provided in the embodiment of the present invention, a second groove is formed corresponding to the pixel electrode inside the first groove, and the organic light emitting layer is located in the second groove.
In the preparation method of the OLED display panel provided by the embodiment of the invention, the width of the first groove is greater than the width of the organic light emitting layer.
In the preparation method of the OLED display panel provided in the embodiment of the present invention, the material of the first transparent electrode layer includes a conductive indium gallium zinc oxide, an indium zinc tin oxide, or an indium gallium zinc tin oxide.
Has the advantages that: according to the OLED display panel provided by the embodiment of the invention, the colorful filter layer is arranged on the substrate, the active layer is formed, the transparent electrode is formed in the light emitting region, and the transparent electrode and the pixel electrode layer on the top form the coupling capacitor, so that the aperture opening ratio of the panel can be improved, and an electrode process can be saved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below.
Fig. 1 is a schematic cross-sectional view of a basic structure of an OLED display panel according to an embodiment of the present invention.
Fig. 2 is a flowchart of a method for manufacturing an OLED display panel according to an embodiment of the present invention.
Fig. 3a to 3l are schematic structural diagrams of semi-finished products in steps of a method for manufacturing an OLED display panel according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. In the drawings, the size and thickness of components illustrated in the drawings are not to scale for clarity and ease of understanding and description.
As shown in fig. 1, in a schematic cross-sectional view of a basic structure of an OLED display panel provided in an embodiment of the present invention, the OLED display panel defines a plurality of pixel regions (only one pixel region is shown in fig. 1 as a representative), each of the pixel regions is divided into a light emitting region Z1 and a non-light emitting region Z2, and the OLED display panel includes: a substrate 101, a light-shielding metal layer 102, a color filter layer 103, a TFT structure layer 10, a first transparent electrode layer 1052, and a pixel electrode layer 116. The light-shielding metal layer 102 is located on the substrate base 101 and corresponds to the non-light-emitting region Z2. The color filter layer 103 is located on the substrate 101 and corresponds to the light emitting region Z1, and is spaced from the light-shielding metal layer 102. The TFT structure layer 10 is located on a side of the light-shielding metal layer 102 away from the substrate 101. The first transparent electrode layer 1052 is located on the side of the color filter layer 103 away from the substrate 101, and is disposed in the same layer as the active layer 1051 of the TFT structure layer 10. One end of the pixel electrode layer 116 is connected to the drain electrode 109 of the TFT structure layer 10, and the other end is connected to the organic light emitting layer 120 of the display panel. In the light-emitting region Z1, a coupling capacitor is formed between the pixel electrode layer 116 and the first transparent electrode layer 1052.
It should be noted that, in the embodiment of the present invention, the first transparent electrode layer 1052 and the pixel electrode layer 116 form a coupling capacitor, that is, the capacitor region and the light emitting region are combined, so that the aperture ratio of the panel can be increased.
The active layer 1051 and the first transparent electrode layer 1052 are formed by patterning the semiconductor layer 105 once, and the active layer 1051 and the first transparent electrode layer 1052 are separated from the light-shielding metal layer 102 and the color filter layer 103 by the buffer layer 104.
The pixel electrode layer 116 is connected to the drain electrode 109 through a fourth via hole 117.
In one embodiment, the TFT structure layer 10 further includes a gate insulating layer 106 over the active layer 1051, a gate electrode 107 over the gate insulating layer 106, an interlayer insulating layer 108 over the gate electrode 107 and the first transparent electrode layer 1052, a source electrode 112 over the interlayer insulating layer 108, a passivation layer 114 over the source electrode 112 and the drain electrode 109, and a planarization layer 115 over the passivation layer 114, wherein in the light emitting region Z1, the pixel electrode layer 116 is located inside a first groove 118, and the first groove 118 penetrates the planarization layer 115, the passivation layer 114, and a portion of the interlayer insulating layer 108. The first groove 118 of the embodiment of the invention penetrates through the planarization layer 115, the passivation layer 114, and a portion of the interlayer insulating layer 108, so that the distance between the pixel electrode layer 116 and the first transparent electrode layer 1052 can be shortened, and the charge storage capability of the coupling capacitor can be enhanced.
Specifically, the drain electrode 109 is connected to one end of the active layer 1051 through a first via 110, and is connected to the light-shielding metal layer 102 through a second via 111; the source 112 is connected to the other end of the active layer 1051 through a third via 113.
It should be noted that the first groove 118 provided in the embodiment of the present invention is formed by first preparing the interlayer insulating layer 108, the passivation layer 114, and the planarization layer 115, and then etching the first groove 118 by using a single etching process. In the embodiment of the present invention, only a portion of the interlayer insulating layer 108 is etched, so that the etching solution is prevented from contacting the first transparent electrode layer 1052, and the first transparent electrode layer 1052 can be protected. In other embodiments, the interlayer insulating layer 108 is etched to a depth 1/3 to 1/2 of the overall thickness of the interlayer insulating layer 108.
In one embodiment, the pixel electrode layer 116 corresponding to the inner side of the first groove 118 includes a second groove 122, and the organic light emitting layer 120 is located in the second groove 122. In the embodiment of the invention, the color filter layer 103 is arranged on the substrate 101, and the organic light-emitting layer 120 is arranged in the second groove 122, so that the light-emitting distance of bottom light emission is shortened.
In one embodiment, the width W2 of the first groove 118 is greater than the width W1 of the organic light emitting layer 120. In the embodiment of the invention, the pixel electrode layer 116 in the light emitting region Z1 is formed inside the first groove 118, the pixel electrode layer 116 in the light emitting region Z1 forms the second groove 122, and the common electrode 121 cannot contact with the pixel electrode layer 116, so the pixel defining layer 119 covers the sidewall of the second groove 122, and the organic light emitting layer 120 is formed in the pixel defining region between the pixel defining layers 119, so the width W1 of the organic light emitting layer 120 is smaller than the width W2 of the first groove 118.
In one embodiment, the material of the first transparent electrode layer 1052 includes a conductive indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide.
As shown in fig. 2, a method for manufacturing an OLED display panel according to an embodiment of the present invention includes steps of:
s201, providing a substrate;
s202, preparing a shading metal layer on the substrate corresponding to the non-luminous area;
s203, preparing a color filter layer on the substrate corresponding to the light emitting region, wherein the color filter layer and the shading metal layer are arranged at intervals;
s204, preparing a TFT structure layer on one side of the shading metal layer far away from the substrate;
s205, preparing a first transparent electrode layer on one side, away from the substrate, of the color filter layer, wherein the first transparent electrode layer and an active layer of the TFT structure layer are prepared on the same layer;
s206, preparing a pixel electrode layer on the TFT structure layer and the first transparent electrode layer; and
and S207, preparing an organic light-emitting layer on the pixel electrode layer corresponding to the light-emitting region, wherein one end of the pixel electrode layer is connected with the drain electrode of the TFT structure layer, the other end of the pixel electrode layer is connected with the organic light-emitting layer, and a coupling capacitor is formed between the pixel electrode layer and the first transparent electrode layer in the light-emitting region.
In one embodiment, the step of preparing the TFT structure layer on the side of the light-shielding metal layer away from the substrate includes: preparing an active layer on one side of the light-shielding metal layer far away from the substrate base plate; preparing a gate insulating layer over the active layer; preparing a gate electrode over the gate insulating layer; preparing an interlayer insulating layer over the gate electrode; preparing a source electrode and a drain electrode over the interlayer insulating layer; preparing a passivation layer over the source electrode and the drain electrode; preparing a planarization layer over the passivation layer; and etching the planarization layer, the passivation layer and part of the interlayer insulating layer to form a first groove in the light emitting area, wherein the pixel electrode layer in the light emitting area is positioned at the inner side of the first groove. The first groove penetrates through the planarization layer, the passivation layer and a part of the interlayer insulating layer, so that the distance between the pixel electrode layer and the first transparent electrode layer can be shortened, and the charge storage capacity of the coupling capacitor can be enhanced.
It should be noted that, in the first groove provided in the embodiment of the present invention, the interlayer insulating layer, the passivation layer, and the planarization layer are prepared first, and then the first groove is formed by etching through one etching process. According to the embodiment of the invention, only part of the interlayer insulating layer is etched, so that the etching solution can be prevented from contacting with the first transparent electrode layer, and the first transparent electrode layer can be protected. In other embodiments, the interlayer insulating layer is etched to a depth of 1/3 to 1/2 of the thickness of the entire interlayer insulating layer.
In one embodiment, a second groove is formed corresponding to the pixel electrode inside the first groove, and the organic light emitting layer is located in the second groove. According to the embodiment of the invention, the color filter layer is arranged on the substrate, and the organic light-emitting layer is arranged in the second groove, so that the light-emitting distance of bottom light emission is shortened.
In one embodiment, the width of the first groove is greater than the width of the organic light emitting layer.
In one embodiment, the material of the transparent electrode comprises a conductive indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide.
Specifically, referring to fig. 3a to 3l, in the method for manufacturing an OLED display panel according to the embodiment of the present invention, a substrate 101 is cleaned and then is ready for use, the substrate 101 may be a glass substrate or polyimide, a layer of metal with a thickness of 50 nm to 200 nm is deposited and patterned to form a light-shielding metal layer 102 corresponding to a non-light-emitting region Z2 of the OLED display panel, where the light-shielding metal may be molybdenum, aluminum, copper, titanium, or an alloy, and then a color filter layer 103 is manufactured in a light-emitting region Z1 corresponding to the OLED display panel;
next, a silicon oxide, silicon nitride, or a silicon oxide/silicon nitride stacked film structure is deposited as the buffer layer 104, and the thickness of the buffer layer 104 ranges from 100 nm to 500 nm.
Next, a layer of a metal oxide semiconductor material, which may be indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide, having a thickness ranging from 10 nm to 100 nm, is deposited as the semiconductor layer 105, and then the semiconductor layer 105 is patterned to form an active layer 1051 and a first transparent electrode layer 1052, which is disposed corresponding to the light emitting region Z1.
Then a layer of silicon oxide, silicon nitride or a silicon oxide/silicon nitride laminated film structure is deposited as a gate insulating layer 106 with the thickness ranging from 100 nanometers to 300 nanometers, then a layer of metal is deposited as a gate 107, the gate metal can be molybdenum, aluminum, copper, titanium, or the like, or an alloy with the thickness ranging from 200 nanometers to 800 nanometers, then a yellow light process is utilized to etch the pattern of the gate metal, then the gate metal pattern is utilized to be self-aligned, the gate insulating layer is etched, only the gate insulating layer exists below the gate metal pattern film layer, and the rest gate insulating layers which are not covered by the gate metal pattern are etched. The region of the active layer 1051 covered by the gate insulating layer 106 left after etching is a channel region.
Next, a layer of metal aluminum is deposited to a thickness ranging from 5 nm to 10 nm, and is annealed, and then the metal aluminum is combined with oxygen in the active layer 1051 (metal oxide) outside the channel region and the first transparent electrode layer 1052 to become a conductor, and other regions (channel regions) which are not processed maintain semiconductor characteristics. The conductive regions of the active layer 1051 are used to reduce the contact resistance between the source and drain electrodes and the active layer. A layer of aluminum is deposited on the first transparent electrode layer 1052 formed after patterning the semiconductor layer 105, and the aluminum is annealed to improve the conductivity of the first transparent electrode layer 1052, so that the original metal oxide semiconductor material of the first transparent electrode layer 1052 is transformed into a transparent electrode with higher conductivity, and then the transparent electrode is used as an electrode plate of a coupling capacitor.
Next, a layer of silicon oxide, silicon nitride, or a silicon oxide/silicon nitride stacked film structure is deposited as an interlayer insulating layer 108, the thickness of which ranges from 200 nm to 1000 nm, and etching is performed on the source/drain contact region corresponding to the TFT structure layer and the contact region corresponding to the light shielding metal layer to form a first via hole 110, a second via hole 111, and a third via hole 113.
Next, a layer of metal, which may be molybdenum, aluminum, copper, titanium, or the like, or an alloy, is deposited as a source/drain metal layer, and then patterned to form a drain electrode 109 and a source electrode 112, where the drain electrode 109 is connected to one end of the active layer 1051 through the first via 110, the drain electrode 109 is connected to the light-shielding metal layer 102 through the second via 111, and the source electrode 112 is connected to the other end of the active layer 1051 through the third via 113.
A layer of silicon oxide, silicon nitride, or a silicon oxide/silicon nitride stack is deposited as a passivation layer 114 having a thickness in the range of 100 nm to 500 nm, thereby completing the fabrication of the TFT structure.
Next, a planarization layer 115 is prepared, and then the planarization layer 115, the passivation layer 114, and the interlayer insulating layer 108 are etched to form a fourth via hole 117 and a first groove 118 that penetrates through the planarization layer 115, the passivation layer 114, and a portion of the interlayer insulating layer 108.
Next, a layer of pixel electrode layer 116 is prepared, the pixel electrode layer 116 is connected to the drain electrode 109 through the fourth via 117, the pixel electrode layer 116 in the light emitting region Z1 is formed inside the first groove 118, the pixel electrode layer 116 in the light emitting region Z1 is formed in the second groove 122, the pixel electrode layer 116 in the light emitting region Z1 and the first transparent electrode layer 1052 together form a coupling capacitor, in this embodiment, the pixel electrode layer 116 in the light emitting region Z1 is disposed in the first groove 118, the distance between the pixel electrode layer 116 and the first transparent electrode layer 1052 is shortened, and the charge storage capability of the coupling capacitor is enhanced.
Next, a pixel defining layer 119 is formed to define a formation region of the OLED light emitting material, and in order to avoid the contact between the subsequent common electrode and the pixel electrode layer, the pixel defining layer 119 should cover the pixel electrode layer 116 on the sidewall of the second groove 122.
Next, an OLED light emitting material is prepared, which may be vapor deposition or printing, to form an organic light emitting layer 120, wherein the width W1 of the organic light emitting layer 120 is smaller than the width W2 of the first groove 118, and the organic light emitting layer 120 of the embodiment of the present invention is formed in the second groove 122, so that a propagation path of bottom-emitting emergent light is shortened, loss of energy of the emergent light can be reduced, and energy is saved.
And finally, preparing a common electrode 121 to complete the preparation process of the OLED display panel.
The embodiment of the invention also provides an OLED display device which comprises the OLED display panel. The OLED display device provided by the embodiment of the invention can be as follows: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital camera, a navigator and the like.
In summary, according to the OLED display panel provided in the embodiments of the present invention, the color filter layer is disposed on the substrate, and the active layer is formed while a transparent electrode is formed in the light emitting region to form a coupling capacitor with the top pixel electrode layer, so that the aperture ratio of the panel can be increased, an electrode process can be omitted, and the technical problems of increased production cost, complex process and high difficulty caused by the transparent capacitor disposed on the OLED display panel in the prior art are solved.
The OLED display panel and the method for manufacturing the same according to the embodiments of the present invention are described in detail above. It should be understood that the exemplary embodiments described herein should be considered merely illustrative for facilitating understanding of the method of the present invention and its core ideas, and not restrictive.
Claims (10)
1. An OLED display panel defining a plurality of pixel regions arranged in an array, each of the pixel regions being divided into a light-emitting region and a non-light-emitting region, the OLED display panel comprising:
a substrate base plate;
the shading metal layer is positioned on the substrate and corresponds to the non-luminous area;
the color filter layer is positioned on the substrate and corresponds to the light emitting area, and is arranged at intervals with the shading metal layer;
the TFT structure layer is positioned on one side of the shading metal layer, which is far away from the substrate base plate;
the first transparent electrode layer is positioned on one side of the color filter layer, which is far away from the substrate base plate, and is arranged on the same layer as the active layer of the TFT structure layer; and
and one end of the pixel electrode layer is connected with the drain electrode of the TFT structure layer, and the other end of the pixel electrode layer is connected with the organic light-emitting layer of the display panel, wherein a coupling capacitor is formed between the pixel electrode layer and the first transparent electrode layer in the light-emitting region.
2. The OLED display panel of claim 1, wherein the TFT structure layer further includes a gate insulating layer over the active layer, a gate electrode over the gate insulating layer, an interlayer insulating layer over the gate electrode and the first transparent electrode layer, a source electrode over the interlayer insulating layer, a passivation layer over the source electrode and the drain electrode, and a planarization layer over the passivation layer, wherein in the light emitting region, the pixel electrode layer is located inside a first groove, and the first groove penetrates the planarization layer, the passivation layer, and a portion of the interlayer insulating layer.
3. The OLED display panel of claim 2, wherein the pixel electrode layer corresponding to an inner side of the first groove includes a second groove, the organic light emitting layer being positioned in the second groove.
4. The OLED display panel of claim 3, wherein a width of the first groove is greater than a width of the organic light emitting layer.
5. The OLED display panel of claim 1, wherein the material of the first transparent electrode layer comprises a conductive indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide.
6. A preparation method of an OLED display panel, wherein the OLED display panel defines a plurality of pixel regions arranged in an array, and each pixel region is divided into a light-emitting region and a non-light-emitting region, the preparation method comprises the following steps:
providing a substrate base plate;
preparing a shading metal layer on the substrate corresponding to the non-luminous area;
preparing a color filter layer on the substrate corresponding to the light emitting region, wherein the color filter layer and the shading metal layer are arranged at intervals;
preparing a TFT structure layer on one side of the shading metal layer far away from the substrate;
preparing a first transparent electrode layer on one side of the color filter layer, which is far away from the substrate, wherein the first transparent electrode layer and the active layer of the TFT structure layer are prepared on the same layer;
preparing a pixel electrode layer on the TFT structure layer and the first transparent electrode layer; and
and preparing an organic light emitting layer on the pixel electrode layer corresponding to the light emitting region, wherein one end of the pixel electrode layer is connected with the drain electrode of the TFT structure layer, the other end of the pixel electrode layer is connected with the organic light emitting layer, and a coupling capacitor is formed between the pixel electrode layer and the first transparent electrode layer in the light emitting region.
7. The method of claim 6, wherein the step of fabricating the TFT structure layer on the side of the light-shielding metal layer away from the substrate comprises:
preparing an active layer on one side of the light-shielding metal layer far away from the substrate base plate;
preparing a gate insulating layer over the active layer;
preparing a gate electrode over the gate insulating layer;
preparing an interlayer insulating layer over the gate electrode;
preparing a source electrode and a drain electrode over the interlayer insulating layer;
preparing a passivation layer over the source electrode and the drain electrode;
preparing a planarization layer over the passivation layer; and
and etching the planarization layer, the passivation layer and part of the interlayer insulating layer to form a first groove in the light emitting area, wherein the pixel electrode layer in the light emitting area is positioned at the inner side of the first groove.
8. The method of manufacturing an OLED display panel according to claim 7, wherein a second groove is formed corresponding to the pixel electrode inside the first groove, and the organic light emitting layer is located in the second groove.
9. The method of manufacturing an OLED display panel according to claim 8, wherein a width of the first groove is greater than a width of the organic light emitting layer.
10. The method of manufacturing an OLED display panel as claimed in claim 6 wherein the material of the first transparent electrode layer includes a conductive indium gallium zinc oxide, indium zinc tin oxide, or indium gallium zinc tin oxide.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113721432A (en) * | 2021-09-16 | 2021-11-30 | 北京京东方技术开发有限公司 | Electric control drum, manufacturing method thereof and printer |
| CN113725158A (en) * | 2021-08-31 | 2021-11-30 | 昆山龙腾光电股份有限公司 | TFT array substrate and manufacturing method thereof |
| CN114361225A (en) * | 2021-12-31 | 2022-04-15 | 长沙惠科光电有限公司 | Display panel |
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| CN114361225A (en) * | 2021-12-31 | 2022-04-15 | 长沙惠科光电有限公司 | Display panel |
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