CN112394544A - Heating type light filtering structure and application thereof - Google Patents
Heating type light filtering structure and application thereof Download PDFInfo
- Publication number
- CN112394544A CN112394544A CN201910761881.1A CN201910761881A CN112394544A CN 112394544 A CN112394544 A CN 112394544A CN 201910761881 A CN201910761881 A CN 201910761881A CN 112394544 A CN112394544 A CN 112394544A
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- Prior art keywords
- heating
- etalon
- substrate
- cavity
- filter structure
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 43
- 238000001914 filtration Methods 0.000 title claims abstract description 18
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910020211 SiOxHy Inorganic materials 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 6
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000011797 cavity material Substances 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
Abstract
The invention discloses a heating type filtering structure and application thereof, wherein the heating type filtering structure comprises a heating element, a substrate and an etalon, the heating element is used for heating the substrate, the etalon is arranged on the substrate, the substrate is formed by a Si material, the etalon is provided with more than one cavity, each cavity is formed by alpha-Si or SiH, the upper end surface and the lower end surface of each cavity are respectively provided with a film system formed by alternately stacking a plurality of high-refractive-index film layers and a plurality of low-refractive-index film layers, and the high-refractive-index film layers are formed by SiH or SiOxHy. The invention can realize the adjustment of the refractive index up to 3.6 at the wavelength of 800nm-4000nm, and the number of the film layers is reduced by more than half compared with the prior art.
Description
Technical Field
The invention relates to the field of laser, in particular to a heating type light filtering structure and application thereof.
Background
Prior art heating type filtering structures, such as the prior patent US7304799, use glass as a substrate on which a heating film is applied; the etalon adopts alpha-Si as an intermediate layer and SiO2Or SiN alternately forms a layered structure with high refractive index and low refractive index, and the film can be heated instantly, because the glass is slow in heat conduction, the alpha-Si can be rapidly heated, but the use wavelength is only 800-1100 nm.
Disclosure of Invention
The invention aims to provide a heating type light filtering structure with a wide tuning range and application thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a heating type optical filtering structure, includes heating member, substrate and etalon, and the heating member is used for the substrate heating, and the etalon is arranged in on the substrate, the substrate is the shaping of Si material, and the etalon has more than one cavity, and each cavity is by alpha-Si or SiH shaping, has the membrane system that forms by stacking in turn a plurality of high refractive index retes and a plurality of low refractive index retes on the up end of cavity and the lower terminal surface respectively, the high refractive index rete is by SiH or SiOxHy shaping.
The heating element is a TEC or resistance heating element.
The low refractive index film layer is made of TiO2、Nb2O5、Ta2O5、SiO2One or a mixture of two or more of them.
The bottom of the heating element is connected with a radiating fin.
A tunable semiconductor laser using the heating type filtering structure of the invention.
A tunable fiber laser using the heating type filtering structure is disclosed.
The invention relates to a tunable solid laser applying a heating type filtering structure.
The invention relates to a tunable intracavity frequency doubling laser applying a heating type filtering structure.
The invention adopts the technology, and has the beneficial effects that: the invention adopts alpha-Si or SiH film as the cavity of the etalon and adopts a reflecting film system formed by alternating SiH or SiOxHy and low refractive material to manufacture the single-cavity or multi-cavity etalon, the substrate adopts silicon material, the thermal expansion coefficient of the silicon and the etalon cavity material is similar, and the thermal conductivity coefficient is larger, the transmission wavelength of the etalon is adjusted by TEC or heating resistor, the adjustment of the refractive index as high as 3.6 can be realized at the wavelength of 800nm-4000nm, and the layer number of the film layer is reduced by more than half compared with the prior art.
Drawings
The invention is described in further detail below with reference to the accompanying drawings and the detailed description;
FIG. 1 is a schematic view of a heated filtering structure according to the present invention;
FIG. 2 is a diagram of a first application example;
FIG. 3 is a diagram illustrating a second exemplary application;
fig. 4 is a schematic diagram of application example three.
Detailed Description
As shown in fig. 1, the heating type filtering structure of the present invention includes a heating element 2, a substrate 3 and an etalon 4, wherein the heating element is used for heating the substrate 3, the etalon 4 is disposed on the substrate 3, and the bottom of the heating element is connected with a heat sink 1.
The substrate 3 is formed by a Si material, the etalon 4 is provided with more than one cavity 41, each cavity 41 is formed by alpha-Si or SiH, the upper end face and the lower end face of each cavity 41 are respectively provided with a film system 42 formed by alternately stacking a plurality of high-refractive-index film layers and a plurality of low-refractive-index film layers, and the high-refractive-index film layers are formed by SiH or SiOxHy.
The heating element 2 is a TEC or resistance heating element 2.
The low refractive index film layer is made of TiO2、Nb2O5、Ta2O5、SiO2One or a mixture of two or more of them.
The invention adopts alpha-Si or SiH film as the cavity of the etalon and adopts a reflecting film system formed by alternating SiH or SiOxHy and low refractive material to manufacture the single-cavity or multi-cavity etalon, the substrate adopts silicon material, the thermal expansion coefficient of the silicon and the etalon cavity material is similar, and the thermal conductivity coefficient is larger, the transmission wavelength of the etalon is adjusted by TEC or heating resistor, the adjustment of the refractive index as high as 3.6 can be realized at the wavelength of 800nm-4000nm, and the layer number of the film layer is reduced by more than half compared with the prior art.
Application example one: the tunable semiconductor laser with the heating type filtering structure has the structure as shown in fig. 2, and the prior art generally adopts a double-plate etalon for tuning; this embodiment is only one piece, because the etalon of the present invention can be made very narrow in transmission wavelength, because of the advantages of high parallelism and almost maximum light absorption, and the cavity can be made shorter, such as less than 3mm in communication requirement.
Application example two: YAG fiber laser tuning, the structure of which is shown in figure 3, is adopted in the tunable fiber laser with the heating type filtering structure, collimated light passes through the etalon in the resonant cavity of the fiber laser, and the wavelength is selected by controlling the temperature, so that the tuning of the fiber laser is realized.
Application example three: the tunable intracavity frequency doubling laser applying the heating type filtering structure has the structure as shown in figure 4, and can form a tunable etalon with narrow line width and almost no absorption loss because the SiH or SiOxHy and alpha-Si or SiH structure absorbs little, and the frequency doubling can reach 400nm-700nm and 700nm-2000nm because the SiH can cover 800nm-4000nm, so that the visible light wave band can be tunable.
In addition, the invention can also be applied to tunable solid laser because SiH can be 800-1100nm, thus covering titanium sapphire laser, and lasers such as chromium-doped, Nd-YAG laser can be tunable. The thermo-optic coefficient of Si is 2.0 x 10-4K, while the thermo-optic coefficient of the hydrogen a-Si, SiH film grown by PECVD deposition can be from 2.3 to 10-4K to 2.9 x 10-4And the thermal-optical coefficient is large, and the adjusting range is enlarged.
While the invention has been described in connection with the above embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, which are illustrative and not restrictive, and that those skilled in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (8)
1. The utility model provides a heating type optical filtering structure, includes heating member, substrate and etalon, and the heating member is used for the substrate heating, and the etalon is arranged in on the substrate its characterized in that: the substrate is formed by a Si material, the etalon is provided with more than one cavity, each cavity is formed by alpha-Si or SiH, the upper end face and the lower end face of each cavity are respectively provided with a film system formed by alternately stacking a plurality of high-refractive-index film layers and a plurality of low-refractive-index film layers, and the high-refractive-index film layers are formed by SiH or SiOxHy.
2. A heated filter structure according to claim 1, wherein: the heating element is a TEC or resistance heating element.
3. A heated filter structure according to claim 1, wherein: the low refractive index film layer is made of TiO2、Nb2O5、Ta2O5、SiO2One or a mixture of two or more of them.
4. A heated filter structure according to claim 1, wherein: the bottom of the heating element is connected with a heat sink.
5. A tunable semiconductor laser employing a heating filter structure according to any one of claims 1 to 4.
6. A tuneable fibre laser employing a heating filter structure according to any of claims 1 to 4.
7. A tuneable solid state laser employing a heated filter structure according to any of claims 1 to 4.
8. A tunable intracavity frequency doubled laser using the heated filter structure of any of claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910761881.1A CN112394544A (en) | 2019-08-19 | 2019-08-19 | Heating type light filtering structure and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910761881.1A CN112394544A (en) | 2019-08-19 | 2019-08-19 | Heating type light filtering structure and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112394544A true CN112394544A (en) | 2021-02-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910761881.1A Pending CN112394544A (en) | 2019-08-19 | 2019-08-19 | Heating type light filtering structure and application thereof |
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| Country | Link |
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| CN (1) | CN112394544A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113791473A (en) * | 2021-10-27 | 2021-12-14 | 福州高意光学有限公司 | Heat adjustable optical switch |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4929063A (en) * | 1986-01-22 | 1990-05-29 | Honeywell Inc. | Nonlinear tunable optical bandpass filter |
| US20020172239A1 (en) * | 1999-07-27 | 2002-11-21 | Mcdonald Mark E. | Tunable external cavity laser |
| US20030151818A1 (en) * | 2001-11-28 | 2003-08-14 | Aegis Semiconductor, Inc. | Package for optical components |
| CN103838008A (en) * | 2012-11-21 | 2014-06-04 | 福州高意通讯有限公司 | Tunable filter |
| CN109962399A (en) * | 2019-03-22 | 2019-07-02 | 核工业理化工程研究院 | 1342nm is tunable micro-slice laser |
-
2019
- 2019-08-19 CN CN201910761881.1A patent/CN112394544A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4929063A (en) * | 1986-01-22 | 1990-05-29 | Honeywell Inc. | Nonlinear tunable optical bandpass filter |
| US20020172239A1 (en) * | 1999-07-27 | 2002-11-21 | Mcdonald Mark E. | Tunable external cavity laser |
| US20030151818A1 (en) * | 2001-11-28 | 2003-08-14 | Aegis Semiconductor, Inc. | Package for optical components |
| CN1610851A (en) * | 2001-11-28 | 2005-04-27 | 伊吉斯半导体公司 | Package for electro-optical components |
| CN103838008A (en) * | 2012-11-21 | 2014-06-04 | 福州高意通讯有限公司 | Tunable filter |
| CN109962399A (en) * | 2019-03-22 | 2019-07-02 | 核工业理化工程研究院 | 1342nm is tunable micro-slice laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113791473A (en) * | 2021-10-27 | 2021-12-14 | 福州高意光学有限公司 | Heat adjustable optical switch |
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