CN112391611B - Plasma enhanced atomic layer deposition coating device - Google Patents
Plasma enhanced atomic layer deposition coating device Download PDFInfo
- Publication number
- CN112391611B CN112391611B CN201910749095.XA CN201910749095A CN112391611B CN 112391611 B CN112391611 B CN 112391611B CN 201910749095 A CN201910749095 A CN 201910749095A CN 112391611 B CN112391611 B CN 112391611B
- Authority
- CN
- China
- Prior art keywords
- air inlet
- inlet branch
- heating
- end cover
- atomic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a plasma enhanced atomic layer deposition coating device which comprises a reaction furnace, a first air inlet branch and a second air inlet branch, wherein an air inlet end cover for air inlet is arranged at one end of the reaction furnace, and the first air inlet branch and the second air inlet branch are connected with the air inlet end cover and alternately air-inlet. The invention has the advantages of being beneficial to making the gas reaction more complete, the film layer more uniform, the film thickness can be controlled more accurately, the environmental pollution is reduced, and the like.
Description
Technical Field
The invention relates to solar cell processing equipment, in particular to a plasma enhanced atomic layer deposition coating device.
Background
With the ever decreasing number of fossil fuels, solar energy has become an important component of energy for human use and has evolved. The full use of solar energy is of great significance in coping with global energy crisis and global warming. The solar cell can convert solar energy into electric energy, one important procedure in the processing process is coating, the cell takes a graphite boat as a carrier, is heated to a specific temperature in a quartz furnace tube through a furnace wire, and is introduced with required gas for chemical reaction, so that the surface of the cell is coated with the coating. With the increasing requirements on the efficiency of the battery piece and the continuous and deep construction of the concept of saving and environment-friendly society, new requirements are also put forward on the coating technology, such as more accurate control on the thickness of the coating, more sufficient gas reaction and more environment-friendly tail gas treatment. A plasma enhanced atomic layer deposition system (PEALD) is a monolithic deposition system designed specifically for scientific research and industrial development users in a specific application area, and the system electrically completely meets CE standards; the system expands the selection range of a common atomic layer deposition system to a precursor source, improves the film deposition rate, reduces the deposition temperature, and is widely applied to the deposition of a temperature sensitive material and a film on a flexible substrate.
The existing coating device adopts inert gas to carry in required reaction gas through a raw material bottle, the reaction gas enters a reaction cavity through a spray plate to react at a specific temperature, the gas after the reaction enters tail gas treatment, and the gas reacts with air under the action of a plurality of layers of filter discs to generate harmless substances. The defects are that: 1. all paths of reaction gases (such as argon and oxygen) enter simultaneously and are sprayed Kong Penru at intervals in space, so that the chemical balance principle is not fully utilized, and the thickness of a coating film is not controlled; 2. spraying by adopting a spraying plate, uniformly distributing small holes on the spraying plate, wherein the pressure difference between the middle and the edge is large, the spraying is uneven, and the small holes are parallel to the direction of the inner cavity (namely, are axially arranged along the furnace tube), so that uniform mixing of reaction gases is not facilitated; 3. the reaction temperature is higher, and the doped impurities are easy to diffuse in the substrate under the high temperature condition, so that the internal stress of the film is not reduced; 4. the furnace wire is adopted for heating, wire winding is difficult, the processing and manufacturing process is complex, the lead wire row is required to be welded, and the service life is short; 5. in the process, al (CH) 3 ) 3 The equal gas can generate a large amount of Al in the reaction process 2 O 3 Al dust and Al (CH) generated by insufficient reaction 3 ) 3 Tail gas. Al (CH) in tail gas 3 ) 3 During the pumping process of the vacuum pump, the dust in the tail gas and Al (CH) in the tail gas can be decomposed or reacted to generate a large amount of dust 3 ) 3 Dust generated by decomposition or reaction is easy to deposit in a vacuum pump or block a tail discharge port, so that the service life of the vacuum pump and the effective working time of equipment can be greatly shortened, a dust capturing device is not arranged, and the dust capturing device is reacted with air to generate harmless particles, so that dust in the air can be increased; 6. the end cover at the end part of the furnace tube is easy to cause yellowing, burning out of the sealing ring and the like due to high temperature.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming the defects in the prior art and providing the plasma enhanced atomic layer deposition coating device which is favorable for enabling the gas reaction to be more sufficient and enabling the thickness of a film layer to be more accurately controlled.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a plasma enhanced atomic layer deposition coating film device, includes reacting furnace, first branch road and the second branch road that admits air, reacting furnace one end is equipped with the end cover that admits air that is used for admitting air, first branch road and the second branch that admits air all with the end cover that admits air links to each other, and admits air in turn.
As a further improvement of the above technical scheme: the gas inlet valve is characterized in that a manual switch valve, a flowmeter and a first pneumatic diaphragm valve are sequentially arranged on the first gas inlet branch along the gas flowing direction, a material source bottle is arranged on one side of the first gas inlet branch, a second pneumatic diaphragm valve is connected between a gas inlet of the material source bottle and the first gas inlet branch, a third pneumatic diaphragm valve is connected between a gas outlet of the material source bottle and the first gas inlet branch, and the junction of the second pneumatic diaphragm valve and the first gas inlet branch and the junction of the third pneumatic diaphragm valve and the first gas inlet branch are respectively provided with two ends of the first pneumatic diaphragm valve.
As a further improvement of the above technical scheme: the air inlet end cover is provided with a plurality of arc air inlet grooves along the circumferential direction, the arc air inlet grooves are provided with a plurality of air inlet holes along the circumferential direction, the air inlet holes are arranged along the radial direction, and the first air inlet branch and the second air inlet branch are communicated with the arc air inlet grooves.
As a further improvement of the above technical scheme: the reaction furnace is wound with an armored electric heating component, the armored electric heating component comprises a flexible sleeve, at least one electric heating wire is arranged in the flexible sleeve, and an insulating filler is arranged between the electric heating wire and the flexible sleeve.
As a further improvement of the above technical scheme: the flexible sleeve is a rubber tube, and the insulating filler is magnesium oxide.
As a further improvement of the above technical scheme: the graphite boat is arranged in the reaction furnace, an electrode is arranged at the opposite angle of one end, away from the air inlet end cover, of the graphite boat, and a power supply lead is connected to the electrode.
As a further improvement of the above technical scheme: the periphery of the reaction furnace is provided with a furnace shell, two ends of the furnace shell extend to two sides of the reaction furnace, the air inlet end cover is in sealing fit with one end of the furnace shell, the other end of the furnace shell is provided with an exhaust end cover, the air inlet end cover and the exhaust end cover are respectively provided with an extension section, and the extension sections extend to the end parts of the reaction furnace.
As a further improvement of the above technical scheme: the reaction furnace other end is equipped with dust trapping apparatus and vacuum pump in proper order, dust trapping apparatus is including catching the cavity, catch the cavity in the flow direction along the tail gas and be equipped with in proper order be used for carrying out the zone of heating to the tail gas, be used for carrying out refrigerated cooling zone to the tail gas and be used for carrying out filterable filtration zone to the tail gas, the steam input tube has been furnished with to the zone of heating.
As a further improvement of the above technical scheme: the heating zone, the cooling zone and the filtering zone are arranged from bottom to top.
As a further improvement of the above technical scheme: the heating zone is internally provided with a heating pipe and a plurality of layers of heating partition plates connected with the heating pipe, each heating partition plate is obliquely arranged, and two adjacent layers of heating partition plates are mutually staggered.
As a further improvement of the above technical scheme: the heating pipes are arranged in an S shape.
As a further improvement of the above technical scheme: the cooling area is internally provided with a cooling liquid input pipe and a plurality of layers of first cooling partition plates which are horizontally arranged, a plurality of second cooling partition plates which are obliquely arranged are arranged below the first cooling partition plates, the second cooling partition plates are symmetrically arranged at two ends of the first cooling partition plates, and the first cooling partition plates and the second cooling partition plates are respectively provided with a flow hole.
As a further improvement of the above technical scheme: and a filtering steel wire mesh is arranged in the filtering area.
As a further improvement of the above technical scheme: the dust capturing device further comprises a bottom plate, a capturing tank and a top plate, wherein the bottom plate is welded to the lower end of the capturing tank, and the top plate is welded to the upper end of the capturing tank.
As a further improvement of the above technical scheme: the device also comprises a temperature measuring component for measuring the temperature of the heating zone and a temperature control component for controlling the temperature of the heating zone.
Compared with the prior art, the invention has the advantages that: the plasma enhanced atomic layer deposition coating device disclosed by the invention changes the traditional mode that two gases simultaneously enter a reaction furnace and are sprayed out from adjacent small holes in space, adopts the first air inlet branch and the second air inlet branch to alternately inlet air in time, is favorable for uniform gas mixing, and simultaneously fully utilizes chemical balance, so that the reaction of raw material gases is more complete, and the film thickness can be accurately controlled.
Drawings
FIG. 1 is a schematic diagram of a plasma enhanced atomic layer deposition coating apparatus according to the present invention.
Fig. 2 is a schematic view of the structure of the intake end cover in the present invention.
Fig. 3 is a schematic structural view of an embodiment of an armored electrical heating element in accordance with the present invention.
Fig. 4 is a schematic structural diagram of a second embodiment of an armored electrical heating element in the present invention.
Fig. 5 is a schematic front view of the dust catcher according to the present invention.
Fig. 6 is a schematic side view of the dust catcher of the present invention.
The reference numerals in the drawings denote: 1. a capture chamber; 2. heating pipes; 3. heating the partition plate; 5. a cooling liquid input pipe; 6. filtering the steel wire mesh; 7. a water vapor input pipe; 8. a temperature measuring part; 9. a reaction furnace; 10. a first air inlet branch; 11. a heating zone; 12. a cooling zone; 13. a filtration zone; 14. a bottom plate; 15. a capture tank; 16. a top plate; 17. a second air inlet branch; 18. an air inlet end cover; 19. an arc-shaped air inlet groove; 20. an air inlet hole; 21. a manual switch valve; 22. a flow meter; 23. a first pneumatic diaphragm valve; 24. a material source bottle; 25. a second pneumatic diaphragm valve; 26. a third pneumatic diaphragm valve; 27. a flexible sleeve; 28. an electric heating wire; 29. an insulating filler; 30. an exhaust end cap; 31. a graphite boat; 32. a furnace shell; 33. a lengthening section; 34. a vacuum pump; 35. a power supply lead; 36. a third air inlet branch; 41. a first cooling partition; 42. a second cooling partition; 43. and a flow hole.
Detailed Description
The invention is described in further detail below with reference to the drawings and specific examples of the specification.
As shown in fig. 1 and 6, the plasma enhanced atomic layer deposition coating device of the present embodiment includes a reaction furnace 9, a first air inlet branch 10, a second air inlet branch 17, and a third air inlet branch 36, wherein an air inlet end cover 18 for air inlet is disposed at one end of the reaction furnace 9, and the first air inlet branch 10 and the second air inlet branch 17 are connected with the air inlet end cover 18 and alternately air-inlet. Wherein, the first air inlet branch 10, the second air inlet branch 17 and the third air inlet branch 36 are respectively filled with argon, oxygen and nitrogen. Argon was used to carry TMA (Al (CH) 3 ) 3 ) And the waste gas enters the reaction furnace 9 to perform chemical reaction with oxygen, and the nitrogen is used for driving the residual gas and impurities after the reaction to enter the dust capture device, so that dangerous gas in the reaction furnace 9 is prevented from entering air and exploding when the graphite boat 31 is taken out.
The plasma enhanced atomic layer deposition coating device changes the traditional mode that two gases simultaneously enter the reaction furnace 9 and are sprayed out from adjacent small holes in space, adopts the first air inlet branch 10 and the second air inlet branch 17 to alternately enter air (namely, only one branch is used for air inlet at the same time), is favorable for uniform mixing of the gases, and makes full use of chemical balance simultaneously, so that the reaction of raw material gases is more sufficient, and the film thickness can be accurately controlled.
Further, in this embodiment, the first air inlet branch 10 is sequentially provided with a manual switch valve 21, a flow meter 22 and a first pneumatic diaphragm valve 23 along the air flow direction, one side of the first air inlet branch 10 is provided with a material source bottle 24, a second pneumatic diaphragm valve 25 is connected between an air inlet of the material source bottle 24 and the first air inlet branch 10, a third pneumatic diaphragm valve 26 is connected between an air outlet of the material source bottle 24 and the first air inlet branch 10, and two ends of the first pneumatic diaphragm valve 23 are respectively arranged at a joint of the second pneumatic diaphragm valve 25 and the first air inlet branch 10 and a joint of the third pneumatic diaphragm valve 26 and the first air inlet branch 10. Wherein, manual on-off valve 21 is used for manual control to get into the circulation and close of gas in the pipeline, can take away TMA gas after the argon gas passes material source bottle 24, then gets into reaction furnace 9. The first air inlet branch 10 passes through the first pneumatic diaphragm valve 23, the second pneumatic diaphragm valve 25 and the third pneumatic diaphragm valve 26 when passing through the material source bottle 24, so that argon can directly pass through a pipeline or pass through the TMA material source bottle 24 and then enter a subsequent pipeline.
Further, in this embodiment, a plurality of arc-shaped air inlet grooves 19 are uniformly arranged on the air inlet end cover 18 along the circumferential direction, a plurality of air inlet holes 20 are uniformly arranged on the arc-shaped air inlet grooves 19 along the circumferential direction, each air inlet hole 20 is radially arranged, and the first air inlet branch 10 and the second air inlet branch 17 are communicated with each arc-shaped air inlet groove 19. The gas firstly enters each arc-shaped air inlet groove 19, and then enters the reaction furnace 9 through the air inlet holes 20 arranged along the diameter direction, so that the reaction gas is more uniformly mixed in the reaction furnace 9, and the coating effect is improved.
Further, in this embodiment, an armored electric heating component is wound on the reaction furnace 9, the armored electric heating component includes a flexible sleeve 27, at least one electric heating wire 28 is disposed in the flexible sleeve 27, and an insulating filler 29 is disposed between the electric heating wire 28 and the flexible sleeve 27. In the preferred embodiment, the flexible sleeve 27 is a rubber tube and the insulating filler 29 is magnesium oxide. The armored electric heating component with the structure can be freely bent, can be installed and used in a narrow environment of a workplace, can play a role in a part which is difficult to heat, and has long service life; can generate heat in a larger area, and has high temperature rising speed and high heat efficiency. The number of the electric heating wires 28 is adjusted according to the application.
Further, in this embodiment, a graphite boat 31 is disposed in the reaction furnace 9, the graphite boat 31 is used as a carrier of a battery piece, and the battery piece is vertically inserted into the graphite boat 31, so that the battery piece is parallel to the flow direction of the process gas, particulate matters are prevented from adhering to the battery piece in the reaction process, the coating quality is further improved, an electrode (not shown in the figure) is disposed at a diagonal position of one end of the graphite boat 31 far away from the air inlet end cover 18, and a power supply lead 35 is connected to the electrode. An electrode is introduced at one end of the graphite boat 31, the electrode is electrified by the power supply lead 35, and a film plating chemical reaction occurs under the condition of electrifying the electrode, so that the chemical precipitation reaction which can be performed under the high temperature condition originally can be performed under the lower temperature (400 ℃), the diffusion of doped impurities in the substrate under the high temperature condition is avoided, and the internal stress of the film is reduced.
Further, in this embodiment, the outer periphery of the reaction furnace 9 is provided with a furnace shell 32, two ends of the furnace shell 32 extend to two sides of the reaction furnace 9, or the reaction furnace 9 is located between two ends of the furnace shell 32, the air inlet end cover 18 is in sealing fit with one end of the furnace shell 32, the other end of the furnace shell 32 is provided with an air outlet end cover 30, the air inlet end cover 18 and the air outlet end cover 30 are respectively provided with an extension section 33, and the extension sections 33 extend to the ends of the reaction furnace 9. By lengthening the air inlet end cover 18 and the air outlet end cover 30, the distance from the end cover to the heating part in the reaction furnace 9 is increased, so that the temperature of the end cover is reduced, and phenomena such as yellowing of the end cover, burning of a sealing ring and the like are avoided.
Further, in this embodiment, the other end of the reaction furnace 9 is sequentially provided with a dust capturing device and a vacuum pump 34, the dust capturing device comprises a capturing chamber 1, a heating zone 11 for heating the tail gas, a cooling zone 12 for cooling the tail gas and a filtering zone 13 for filtering the tail gas are sequentially arranged in the capturing chamber 1 along the flow direction of the tail gas, and the heating zone 11 is provided with a water vapor input pipe 7. The capturing chamber 1 can be formed by welding and enclosing a bottom plate 14, a capturing tank 15 and a top plate 16, a tail gas inlet is formed in the side wall of the lower end of the capturing tank 15, a tail gas outlet is formed in the top plate 16, and casters are arranged on the bottom plate 14, so that equipment can move conveniently; of course, in other embodiments, other configurations may be used. The dust capturing device is provided with a heating zone 11, a cooling zone 12 and a filtering zone 13 in the capturing chamber 1 along the flowing direction of tail gas, namely, the tail gas enters the capturing chamber 1 and then passes through the heating zone 11, the cooling zone 12 and the filtering zone 13, the heating zone 11 is provided with a water vapor input pipe 7, and water vapor can be input into the heating zone 13 through the water vapor input pipe 7. In operation, al (CH) 3 ) 3 Is decomposed in the heating zone 11 and reacts with water vapor, and simultaneously utilizesThe water vapor bonds dust particles together, so that the viscosity and the particle diameter of the dust are increased, and the sedimentation and bonding of the dust can be effectively promoted; the cooling zone 12 then cools the tail gas to a temperature range allowed by the vacuum pump, while further settling and binding a portion of the dust; and finally, the tail gas is filtered by the filtering area 13, dust in the tail gas is filtered, and the dust filtering effect is guaranteed due to the increase of dust particles.
Furthermore, in the embodiment, the heating zone 11, the cooling zone 12 and the filtering zone 13 are arranged from bottom to top, so that dust settling and adhesion to the bottom of the capturing chamber 1 can be promoted by gravity, and the capturing efficiency of dust can be further improved.
Further, in this embodiment, the heating zone 11 is provided therein with a heating pipe 2 and a plurality of heating partitions 3 connected (preferably welded) to the heating pipe 2, each heating partition 3 is disposed obliquely, and two adjacent heating partitions 3 are staggered from each other. During operation, the heating pipe 2 is used for heating the heating partition plate 3, heat is transferred to the surrounding air, the heating area of tail gas is increased, and Al (CH) is promoted 3 ) 3 And the flow path and residence time of the tail gas are prolonged. As a preferred solution, the device further comprises a temperature measuring component 8 (for example, a common thermocouple) for measuring the temperature of the heating zone 11 and a temperature control component (not shown in the figure, for example, a common temperature controller) for controlling the temperature of the heating zone 11, wherein the temperature of the heating zone 11 is controlled to be a set temperature by using the thermocouple and the temperature controller.
Further, in the present embodiment, the heating pipes 2 are arranged in an S-shape. The S-shaped heating pipe 2 facilitates the arrangement of more heating baffles 3 while increasing the heated area of the exhaust gas.
Further, in the present embodiment, the cooling area 12 is provided with the cooling liquid input pipe 5 and a plurality of layers of horizontally arranged first cooling partition plates 41, a plurality of obliquely arranged second cooling partition plates 42 are arranged below the first cooling partition plates 41, a plurality of second cooling partition plates 42 are symmetrically arranged at two ends of the first cooling partition plates 41, and the first cooling partition plates 41 and the second cooling partition plates 42 are respectively provided with a flow hole 43. During operation, the cooling liquid input pipe 5 continuously circulates cooling water to continuously cool the first cooling partition board 41, the second cooling partition board 42 and the surrounding environment, the temperature of the tail gas is reduced to the allowable temperature of the vacuum pump, the first cooling partition board 41 and the second cooling partition board 42 can change the flow path of the tail gas, break up the tail gas, increase the contact area and the contact time with the tail gas, and effectively bond part of dust on the first cooling partition board 41 and the second cooling partition board 42.
Further, in this embodiment, the filtering area 13 is provided with a filtering steel wire mesh 6, and the tail gas is filtered through the filtering steel wire mesh 6.
The working principle of the dust catching device is as follows:
the tail gas in the reaction chamber enters the dust capturing device from the position A, and the tail gas contains dust and Al (CH) 3 ) 3 、N 2 O, ar, etc. In the heating zone 11, the heating pipe 2 heats the heating partition plate 3, and heat is transferred to the surrounding air, so that the heating area of the tail gas is increased, and Al (CH) is promoted 3 ) 3 The decomposition of the tail gas, the flow path and the residence time of the tail gas are prolonged, the temperature of the area is controlled to be a set temperature by a temperature measuring component 8 and a temperature controller, and a proper amount of water vapor and Al (CH) are introduced through a water vapor input pipe 7 3 ) 3 To react, al (CH) 3 ) 3 Decompose and react with water vapor, N 2 The equation for the O reaction is as follows:
2【Al(CH 3 ) 3 】+15H 2 0＝Al 2 O 3 +6CO+24H 2
N 2 O+Al(CH 3 ) 3 →N 2 +Al 2 O X +CO 2 +H 2 O
at the same time due to water vapor and Al 2 O 3 Al (various aluminum ions), al x C y Hardening the dust (various kinds of carbon-aluminum compounds), and forming a part of Al 2 O 3 、Al*、Al x C y The dust condenses on the soleplate 14 and the heating partition 3.
In the cooling zone 12, the cooling liquid input pipe 5 continuously circulates cooling water to cool the cooling partition board 4 and the surrounding environment continuously, the temperature of the tail gas is reduced to the allowable temperature of the vacuum pump, the cooling partition board 4 can change the flow path of the tail gas, increase the contact area with the tail gas, and can effectively bond part of dust to the cooling partition board 4.
In the filtering zone 13, the filtering steel wire mesh 6 filters the tail gas, filters dust, and at the same time further cools the tail gas, and the vacuum pump discharges the tail gas from the position B into a subsequent tail gas treatment device.
While the invention has been described with reference to preferred embodiments, it is not intended to be limiting. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art, or equivalent embodiments with equivalent variations can be made, without departing from the scope of the invention. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention shall fall within the scope of the technical solution of the present invention.
Claims (9)
1. The utility model provides a plasma enhancement atomic layer deposition coating film device, includes reacting furnace (9), first air inlet branch road (10) and second air inlet branch road (17), first air inlet branch road (10) with be equipped with valve assembly on second air inlet branch road (17) respectively, its characterized in that: an air inlet end cover (18) for air inlet is arranged at one end of the reaction furnace (9), the first air inlet branch (10) and the second air inlet branch (17) are connected with the air inlet end cover (18) and alternately air-inlet, argon and oxygen are respectively introduced into the first air inlet branch (10) and the second air inlet branch (17), the argon is used for carrying TMA into the reaction furnace (9) to carry out chemical reaction with the oxygen, a dust capturing device and a vacuum pump (34) are sequentially arranged at the other end of the reaction furnace (9), the dust capturing device comprises a capturing cavity (1), a heating area (11) for heating the tail gas, a cooling area (12) for cooling the tail gas and a water vapor filtering area (13) for filtering the tail gas are sequentially arranged in the capturing cavity (1), and the heating area (11) is provided with a water vapor input pipe (7), and when the reaction furnace is operated, TMA is decomposed in the heating area (11) and reacts with the oxygen, and dust particles are simultaneously bonded together by utilizing water vapor; the cooling zone (12) then cools the tail gas to a temperature range allowed by the vacuum pump (34) while further settling and binding a portion of the dust; finally, the tail gas is filtered by a filtering area (13).
2. The plasma enhanced atomic layer deposition coating apparatus according to claim 1, wherein: the novel air inlet device is characterized in that a manual switch valve (21), a flowmeter (22) and a first pneumatic diaphragm valve (23) are sequentially arranged on the first air inlet branch (10) along the air flowing direction, a material source bottle (24) is arranged on one side of the first air inlet branch (10), a second pneumatic diaphragm valve (25) is connected between an air inlet of the material source bottle (24) and the first air inlet branch (10), a third pneumatic diaphragm valve (26) is connected between an air outlet of the material source bottle (24) and the first air inlet branch (10), and the joint of the second pneumatic diaphragm valve (25) and the first air inlet branch (10) and the joint of the third pneumatic diaphragm valve (26) and the first air inlet branch (10) are arranged at two ends of the first pneumatic diaphragm valve (23).
3. The plasma enhanced atomic layer deposition coating apparatus according to claim 1, wherein: the novel air inlet end cover is characterized in that a plurality of arc-shaped air inlet grooves (19) are uniformly formed in the air inlet end cover (18) along the circumferential direction, a plurality of air inlet holes (20) are uniformly formed in the arc-shaped air inlet grooves (19) along the circumferential direction, the air inlet holes (20) are radially arranged, and the first air inlet branch (10) and the second air inlet branch (17) are communicated with the arc-shaped air inlet grooves (19).
4. A plasma enhanced atomic layer deposition coating apparatus according to any one of claims 1 to 3, wherein: the reaction furnace (9) is wound with an armored electric heating component, the armored electric heating component comprises a flexible sleeve (27), at least one electric heating wire (28) is arranged in the flexible sleeve (27), and an insulating filler (29) is arranged between the electric heating wire (28) and the flexible sleeve (27).
5. The plasma enhanced atomic layer deposition coating apparatus according to claim 4, wherein: the flexible sleeve (27) is a rubber tube, and the insulating filler (29) is magnesium oxide.
6. A plasma enhanced atomic layer deposition coating apparatus according to any one of claims 1 to 3, wherein: graphite boat (31) are arranged in the reaction furnace (9), electrodes are arranged at opposite angles at one ends of the graphite boat (31) away from the air inlet end cover (18), and power leads (35) are connected to the electrodes.
7. A plasma enhanced atomic layer deposition coating apparatus according to any one of claims 1 to 3, wherein: the reactor comprises a reactor (9), and is characterized in that a furnace shell (32) is arranged on the periphery of the reactor (9), two ends of the furnace shell (32) extend to two sides of the reactor (9), an air inlet end cover (18) is in sealing fit with one end of the furnace shell (32), an air outlet end cover (30) is arranged at the other end of the furnace shell (32), extension sections (33) are arranged on the air inlet end cover (18) and the air outlet end cover (30), and the extension sections (33) extend to the end parts of the reactor (9).
8. A plasma enhanced atomic layer deposition coating apparatus according to any one of claims 1 to 3, wherein: the heating device is characterized in that a heating pipe (2) and a plurality of layers of heating partition plates (3) connected with the heating pipe (2) are arranged in the heating area (11), each heating partition plate (3) is obliquely arranged, and two adjacent layers of heating partition plates (3) are staggered.
9. The plasma enhanced atomic layer deposition coating apparatus according to claim 8, wherein: be equipped with coolant liquid input tube (5) and multilayer first cooling baffle (41) that level was arranged in cooling zone (12), first cooling baffle (41) below is equipped with polylith second cooling baffle (42) that slope was arranged, polylith second cooling baffle (42) symmetry arrange in both ends of first cooling baffle (41), first cooling baffle (41) with all be equipped with on second cooling baffle (42) circulation hole (43).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910749095.XA CN112391611B (en) | 2019-08-14 | 2019-08-14 | Plasma enhanced atomic layer deposition coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910749095.XA CN112391611B (en) | 2019-08-14 | 2019-08-14 | Plasma enhanced atomic layer deposition coating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112391611A CN112391611A (en) | 2021-02-23 |
| CN112391611B true CN112391611B (en) | 2023-05-26 |
Family
ID=74602712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910749095.XA Active CN112391611B (en) | 2019-08-14 | 2019-08-14 | Plasma enhanced atomic layer deposition coating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112391611B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114807905B (en) * | 2022-06-27 | 2022-10-28 | 江苏邑文微电子科技有限公司 | Atomic layer deposition device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123783A (en) * | 1989-10-09 | 1991-05-27 | Nippon Mining Co Ltd | Recovery of organometallic compound |
| JP2004095701A (en) * | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | Substrate treatment device, method of treating substrate, and method of cleaning substrate treatment device |
| CN109207962A (en) * | 2017-06-30 | 2019-01-15 | 财团法人交大思源基金会 | chemical vapor growth device |
| CN208829760U (en) * | 2018-09-30 | 2019-05-07 | 无锡松煜科技有限公司 | Atomic layer deposition apparatus gas-filtering device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5051875B2 (en) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
| CN102953045B (en) * | 2011-08-25 | 2014-04-09 | 沈阳金研机床工具有限公司 | System and technology for chemical vapor deposition coating |
| JP5874469B2 (en) * | 2012-03-19 | 2016-03-02 | 東京エレクトロン株式会社 | Trap apparatus and film forming apparatus |
| CN106367733B (en) * | 2015-07-24 | 2019-02-22 | 东莞市中镓半导体科技有限公司 | A kind of device and method for removing HVPE equipment pipe tail gas deposit |
| CN107008089A (en) * | 2017-04-08 | 2017-08-04 | 安徽盛运重工机械有限责任公司 | A kind of tail cigarette processing compound type dust remover |
| CN108421373A (en) * | 2017-11-01 | 2018-08-21 | 海盐哈特惠机械五金制品有限公司 | A kind of vent gas treatment discharge technology |
| CN108149225A (en) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | A kind of vacuum reaction device and reaction method |
| CN110042370B (en) * | 2019-05-22 | 2021-05-14 | 湖南红太阳光电科技有限公司 | Reaction chamber structure of tubular PECVD equipment |
-
2019
- 2019-08-14 CN CN201910749095.XA patent/CN112391611B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123783A (en) * | 1989-10-09 | 1991-05-27 | Nippon Mining Co Ltd | Recovery of organometallic compound |
| JP2004095701A (en) * | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | Substrate treatment device, method of treating substrate, and method of cleaning substrate treatment device |
| CN109207962A (en) * | 2017-06-30 | 2019-01-15 | 财团法人交大思源基金会 | chemical vapor growth device |
| CN208829760U (en) * | 2018-09-30 | 2019-05-07 | 无锡松煜科技有限公司 | Atomic layer deposition apparatus gas-filtering device |
Non-Patent Citations (1)
| Title |
|---|
| 原子层沉积工艺制备催化薄膜厚度对生长碳纳米管阵列的影响;杨超等;无机材料学报;31(07);第681~686页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112391611A (en) | 2021-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5596690B2 (en) | Exhaust gas purification system for diesel engine | |
| CN101549249B (en) | Organic exhaust gas processing method and system thereof | |
| CN112391611B (en) | Plasma enhanced atomic layer deposition coating device | |
| CN104338411B (en) | Exhaust gas treatment device | |
| CN104401966A (en) | Continuous type production equipment and method of carbon nano tube | |
| CN209968110U (en) | High-efficient organic gas catalytic purification device | |
| CN105674303A (en) | Waste gas treatment device | |
| CN210674759U (en) | Flue gas purification type waste heat recoverer | |
| CN210570052U (en) | Natural gas heating furnace waste heat recovery who seals production utilizes device | |
| CN217119830U (en) | Tail gas plasma treatment absorption equipment | |
| CN103157359B (en) | The exhaust gas cleaner of CVD technique | |
| JP5869714B1 (en) | Steam circulation regeneration system | |
| CN114923193A (en) | Harmful gas combustion reactor | |
| CN209605173U (en) | A kind of electrophoresis drying oven exhaust treatment system | |
| CN210564721U (en) | Exhaust gas purification device for diesel internal combustion engine | |
| CN111036013B (en) | Tail gas dust capturing device for tubular PECVD (plasma enhanced chemical vapor deposition) equipment | |
| CN203203415U (en) | Energy-saving smelting furnace with simple filtering device | |
| CN205925398U (en) | Waste gas treatment device | |
| CN203379811U (en) | Exhaust gas treatment device | |
| CN114737168A (en) | Chemical vapor deposition equipment of high-purity pyrolytic carbon coating | |
| CN210921476U (en) | Well type industrial electric furnace for producing enamel pipe air preheater | |
| CN203981454U (en) | A kind of low-temperature plasma generator is worked in coordination with particles sampling device | |
| CN213590043U (en) | Graphitizing furnace exhaust treatment device | |
| CN216953093U (en) | Waste gas treatment burner | |
| CN216919399U (en) | PECVD equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |