CN112382592B - Intelligent combined surface cleaning equipment and method - Google Patents

Intelligent combined surface cleaning equipment and method Download PDF

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CN112382592B
CN112382592B CN202011291692.1A CN202011291692A CN112382592B CN 112382592 B CN112382592 B CN 112382592B CN 202011291692 A CN202011291692 A CN 202011291692A CN 112382592 B CN112382592 B CN 112382592B
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CN112382592A (en
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林和
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
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    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract

The invention provides novel intelligent combined surface cleaning equipment and a method. The equipment comprises a surface pretreatment cavity, a surface cleaning cavity, a real-time characteristic detection system and a central information processing system; the surface pretreatment cavity is electrically connected with the surface cleaning cavity, the real-time characteristic detection system and the central information processing system respectively; the surface cleaning cavity is electrically connected with the real-time characteristic detection system and the central information processing system; the real-time characteristic detection system is electrically connected with the central information processing system.

Description

Intelligent combined surface cleaning equipment and method
Technical Field
The invention provides intelligent combined surface cleaning equipment and method, and belongs to the technical field of cleaning.
Background
The development of modern science and technology requires various equipments and devices, and the surface of various materials, such as metals, semiconductors (elemental and compound semiconductors), insulators, etc., is cleaned by various equipments and methods in the process of manufacturing the equipments and devices. Because the existing cleaning method needs to adopt different cleaning equipment and methods to obtain the surface characteristics of the object required in practical application, especially for the object cleaning required by medical and biomedical engineering application, the problems of low efficiency, poor reliability, high cost and the like need to be solved urgently.
Disclosure of Invention
The invention provides intelligent combined surface cleaning equipment and method, which are used for solving the problems of low cleaning efficiency, poor reliability and higher cost in the prior art, and adopt the following technical scheme:
the invention provides intelligent combined surface cleaning equipment, which comprises a surface pretreatment cavity, a surface cleaning cavity, a real-time characteristic detection system and a central information processing system, wherein the surface pretreatment cavity is arranged on the surface of the surface cleaning cavity; the surface pretreatment cavity is electrically connected with the surface cleaning cavity, the real-time characteristic detection system and the central information processing system respectively; the surface cleaning cavity is electrically connected with the real-time characteristic detection system and the central information processing system; the real-time characteristic detection system is electrically connected with the central information processing system.
Further, the real-time characteristic detection system comprises a real-time surface characteristic detection system and a real-time surface film characteristic detection system; the real-time surface characteristic detection system is electrically connected with the surface pretreatment cavity, the surface cleaning cavity and the central information processing system respectively.
Further, the central information processing system comprises a central controller, which is used for selecting a surface pretreatment scheme, a process flow and a cleaning source of the surface cleaning cavity corresponding to the surface characteristics of the object to be cleaned according to the surface characteristics of the object to be cleaned, and simultaneously feeding back a real-time detection result of the real-time surface characteristic detection system to the central processor, automatically adjusting corresponding parameters of the process flow of the object to be cleaned, and sending a parameter adjustment information instruction to the surface pretreatment cavity and the surface cleaning cavity.
Further, the surface pretreatment cavity comprises a chemical mechanical polishing treatment cavity, a laser treatment cavity, a plasma treatment cavity, a surface film growth cavity and a surface film removal cavity; the object outlet end of the chemical mechanical polishing treatment cavity is connected with the object inlet end of the laser treatment cavity; the object outlet end of the laser processing cavity is connected with the object inlet end of the plasma processing cavity; the object outlet end of the plasma processing cavity is connected with the object inlet end of the surface film growth cavity; the object outlet end of the surface film growth cavity is connected with the object inlet end of the surface film removal cavity;
the chemical mechanical polishing processing cavity is respectively connected with the central information processing system and the real-time surface characteristic detection system; the laser processing cavity, the plasma processing cavity and the surface film removing cavity are respectively and electrically connected with a real-time surface characteristic detection system; the surface film growth cavity is electrically connected with a real-time surface film characteristic detection system.
Further, the chemical mechanical polishing processing chamber is used for performing surface processing on the object in the chemical mechanical polishing processing chamber by using a chemical and mechanical surface processing mode according to the requirement of the surface state of the object in the chamber;
the laser processing cavity is used for processing the surface of an object by utilizing lasers with different wavelengths according to the requirement of the surface state of the object in the cavity; the energy of the laser and the generation mode of the laser, such as pulse and continuous laser, are also set according to the requirements of the surface state of the object.
The plasma processing cavity is used for selecting the type of plasma according to the requirement of the surface state of an object in the cavity and carrying out plasma flow, power and energy parameters of plasma processing according to the requirement of the surface state of the object;
the surface film growth cavity is used for selecting the film types and the thicknesses corresponding to the film types according to the requirements of the surface state of the object in the cavity, and performing film rising processing on the object by a film processing method corresponding to the requirements of the surface state of the object;
the surface film removing cavity is used for selecting a film removing mode corresponding to the requirement of the surface state of the object according to the requirement of the surface state of the object in the cavity and removing the film on the surface of the object.
Further, the surface cleaning cavity comprises an object cleaning cavity, a Doppler light source, a laser light source, a high-energy particle source, an electromagnetic wave source, a magnetic field forming device, an ultrasonic wave source, a mechanical vibration source, a fluid power source and a gas power source; the Doppler light source, the laser light source, the high-energy particle source, the electromagnetic wave source, the magnetic field forming device, the ultrasonic wave source, the mechanical vibration source, the fluid power source and the gas power source are respectively arranged on the object cleaning cavity; the Doppler light source, the laser light source, the high-energy particle source, the electromagnetic wave source, the magnetic field forming device, the ultrasonic wave source, the mechanical vibration source, the fluid power source and the gas power source are respectively and electrically connected with the central information processing system; the object cleaning cavity is electrically connected with the real-time surface characteristic detection system.
Further, the object cleaning cavity is used for carrying out object cleaning parameters and method configuration according to the type of objects in the cavity and user requirements, and cleaning the surface of the objects in the cavity;
the Doppler light source comprises a broad-spectrum light source from ultraviolet to infrared and is used for determining the broad-spectrum light source corresponding to the surface cleaning treatment requirement of the object and/or the wavelength and the energy of light waves corresponding to the broad-spectrum light source according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the laser light source comprises a laser light source from ultraviolet to infrared and is used for determining the laser light source and/or the laser wavelength corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity; the energy of the laser and the generation mode of the laser, such as pulse and continuous laser, are also set according to the requirements of the surface state of the object.
The electromagnetic wave source comprises a radio frequency source from millimeter waves to micron waves and is used for determining the frequency of electromagnetic waves corresponding to the surface cleaning treatment requirement of the object according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the magnetic field generating device comprises a direct-current magnetic field and an alternating-current magnetic field forming device and is used for determining the strength and polarity of a formed direct-current magnetic field or an alternating-current magnetic field corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the ultrasonic source is used for selecting ultrasonic frequency and energy corresponding to the requirement of the surface state of the object according to the requirement of the surface state of the object in the cavity.
The mechanical vibration source is used for determining the intensity of mechanical vibration waves corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity; and the manner of generation of the mechanical vibration wave, such as continuously or intermittently, including the length of the intermittent time.
The fluid power source is used for determining the flow rate, pressure and temperature of fluid corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, surface state density and surface tension of the object in the object cleaning cavity; and the manner in which the fluid is produced, e.g., continuously or intermittently, including the length of the intermittent period.
The gas power source is used for determining the gas type corresponding to the object surface cleaning treatment requirement, the gas flow, the pressure and the temperature corresponding to the gas type, the gas generation mode such as continuous or intermittent including the length of intermittent time and the like according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity, and controlling the solubility parameter corresponding to the gas type.
An intelligent combined surface cleaning method adopts the intelligent combined surface cleaning equipment to clean the surface, and the specific process comprises the following steps:
step 1, a central information processing system receives information of an object to be cleaned input by a user, determines a corresponding object cleaning scheme according to the type and the surface condition of the object to be cleaned, and sends each instruction corresponding to the object cleaning scheme to a surface pretreatment cavity, a surface cleaning cavity and a real-time characteristic detection system;
step 2, sending the object to be cleaned into a surface pretreatment cavity, and pretreating the surface of the object to be cleaned through the surface pretreatment cavity according to a cleaning scheme provided by a central information processing system to obtain a pretreated object to be cleaned;
step 3, sending the object to be cleaned after pretreatment into a surface cleaning cavity, controlling the surface cleaning cavity to select a cleaning source according to the surface condition of the object to be cleaned after pretreatment by the central information processing system, and determining relevant parameters of the cleaning source in the object surface cleaning process according to the surface condition requirement of the object in the object cleaning cavity;
step 4, cleaning the surface of the object to be cleaned after pretreatment by using the surface cleaning cavity, feeding back the surface state of the object to be cleaned to the central information processing system in real time through the real-time surface film characteristic detection system in the cleaning process, and judging whether the surface state accords with the requirement preset by a user; if yes, ending the cleaning process; if not, executing step 5;
and 5, returning the cleaned object to the surface pretreatment cavity, and repeating the steps 2 to 4 until the surface condition of the cleaned object meets the preset requirements of the customer.
Further, the step 2 of sending the object to be cleaned into the surface pretreatment cavity, and pretreating the surface of the object to be cleaned through the surface pretreatment cavity according to the cleaning scheme provided by the central information processing system to obtain the pretreated object to be cleaned includes:
step 201, determining whether the object to be cleaned has the requirements of surface atoms and electronic states, if so, sending the object to be cleaned into a chemical mechanical polishing processing cavity for surface chemical mechanical polishing, and if not, entering a laser processing cavity;
step 202, selecting corresponding laser wavelength, period and power by the laser processing cavity according to the requirement of the surface of the object, carrying out surface processing on the object, and feeding back the surface state of the object to a central information processing system through a real-time surface characteristic detection system; the central information processing system sends the difference between the fed back object expression state and the user requirement back to the surface pretreatment cavity, controls the laser treatment cavity to carry out laser treatment adjustment on the treated object according to the difference condition, and indicates the surface pretreatment cavity to send the treated object into the plasma treatment cavity after the laser treatment is finished;
step 203, the plasma processing cavity determines the type, flow, power and energy parameters of plasma according to the requirement of the surface state of the processed object, performs plasma processing on the processed object, and feeds the surface state of the object back to the central information processing system through the real-time surface characteristic detection system; when the surface state of the processed object meets the parameters preset by a user, sending the processed object into a surface film growth cavity;
204, the surface film growth cavity determines the type and thickness of a film and a method for growing the film according to the surface requirement of the object to be processed, the object to be processed is subjected to film growth processing, meanwhile, the surface state of the object is fed back to a central information processing system through a real-time surface characteristic detection system, the central information processing system sends the difference between the object expression state fed back and the user requirement back to the surface film growth cavity, the surface film growth cavity adjusts the film growth process according to the fed-back difference, and instructs the surface film growth cavity to send the object to be processed into a surface film removal cavity after the surface film growth cavity is guided to meet the preset parameters of the user;
step 205, the surface film removing cavity determines a film removing method according to the surface requirement of the object to be processed, performs film removing processing, feeds back the surface state of the object to the central information processing system through the real-time surface characteristic detection system, the central information processing system sends back the difference between the object performance state fed back and the user requirement to the surface film removing cavity, and adjusts the film removing process to obtain the object to be cleaned after pretreatment;
and step 206, detecting the surface state of the pretreated object to be cleaned through the real-time surface characteristic detection system, feeding detection information back to the central information processing system, judging whether the pretreated object to be cleaned meets the user requirement or not through the central information processing system, if so, sending the pretreated object to be cleaned into the surface cleaning cavity, and if not, repeating the contents of the steps 201 to 205 until the surface state of the pretreated object to be cleaned meets the user requirement.
Further, the intelligent combined surface cleaning method further comprises the step that in the process of preprocessing an object to be cleaned, the real-time surface characteristic detection system monitors whether the data sent to the central information processing system by the real-time surface characteristic detection system is delayed or not in real time through the following formula:
Figure GDA0003233124820000051
wherein, T represents the reference time of data transmission delay, and when T exceeds the preset reference time threshold, the data transmission delay exists; qcA characteristic constant representing a transmission medium of the electronic device; t is1Representing the time for the real-time surface property detection system to send data to a central information processing system; t is2Representing the time for the central information processing system to feed back the corresponding data to the real-time surface characteristic detection system; c1Representing the real-time surface featuresThe data volume sent to the central information processing system by the sexual detection system at a time; c2Data volume representing corresponding data that the central information processing system feeds back to the real-time surface property detection system at a single time;
when determining that the data of the real-time surface characteristic detection system and the central information processing system are monitored in real time and delayed, adjusting the data feedback rate of the central information processing system by the following formula:
Figure GDA0003233124820000052
where H denotes the adjusted data feedback rate, H0Indicating a data feedback rate at which there is currently a delay; Δ H represents a data feedback rate adjustment amount, T, of the central information processing system0Represents a reference time threshold; v1Representing the rate at which the real-time surface property detection system sends data to the central information processing system a single time; v2Representing the rate of single feedback of corresponding data to the real-time surface characteristic detection system by the central information processing system; v1iThe speed of sending data to the central information processing system by the ith real-time surface characteristic detection system is represented; v2iThe speed of feeding back corresponding data to the real-time surface characteristic detection system by the ith central information processing system is represented; t is1iThe time length for the ith real-time surface characteristic detection system to send data to the central information processing system is represented; t is2iThe time length for the ith central information processing system to feed back the corresponding data to the real-time surface characteristic detection system is represented; n represents the data transmission times of the real-time surface characteristic detection system for transmitting data to the central information processing system, and m represents the data feedback times of the central information processing system for feeding back corresponding data to the real-time surface characteristic detection system.
The invention has the beneficial effects that:
the intelligent combined surface cleaning equipment and the method can respectively adopt one or more cleaning methods according to the surface characteristics of different materials, such as metal, semiconductor (element and compound semiconductor), insulator and the like, and clean an object to be cleaned so as to ensure that the surface state required by application is obtained. Each cleaning cavity is provided with a real-time detection device for the surface state of an object. Meanwhile, real-time feedback is carried out to obtain the surface state of the object required by the device and industrial application. And the central information processing system coordinates the cleaning process and adjusts parameters according to the requirements of customers and the real-time state of the surface of the cleaned object. The device and the method provided by the invention can be used for cleaning objects, can coordinate a plurality of objects to be cleaned to perform surface cleaning operation at the same time, and effectively improve the cleaning efficiency. Meanwhile, the reliability of system operation and the cleaning precision and the cleaning quality of object cleaning can be effectively improved through process coordination and parameter adjustment, so that the surface of the cleaned object can meet the requirements of customers to a great extent, and the customer satisfaction is improved.
Drawings
FIG. 1 is a flow chart of the method of the present invention;
FIG. 2 is a schematic diagram of the method of the present invention;
FIG. 3 is a schematic view of the apparatus of the present invention;
FIG. 4 is a schematic view of a surface preparation chamber of the apparatus of the present invention;
FIG. 5 is a schematic view of a surface cleaning chamber of the apparatus of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
The invention provides an intelligent combined surface cleaning device, which designs a combined surface cleaning device consisting of a plurality of cleaning cavities by utilizing advanced technologies such as optics, electricity, magnetism, acoustics, chemistry, plasma, sensors, bioelectronics, artificial intelligence and the like. Specifically, the method comprises the following steps:
as shown in fig. 3 to 5, the apparatus includes a surface pretreatment chamber, a surface cleaning chamber, a real-time property detection system, and a central information processing system; the surface pretreatment cavity is electrically connected with the surface cleaning cavity, the real-time characteristic detection system and the central information processing system respectively; the surface cleaning cavity is electrically connected with the real-time characteristic detection system and the central information processing system; the real-time characteristic detection system is electrically connected with the central information processing system.
Wherein the real-time property detection system comprises a real-time surface property detection system and a real-time surface film property detection system; the real-time surface characteristic detection system is electrically connected with the surface pretreatment cavity, the surface cleaning cavity and the central information processing system respectively. The central information processing system comprises a central controller, and is used for selecting a surface pretreatment scheme, a process flow and a cleaning source of the surface cleaning cavity corresponding to the surface characteristics of the object to be cleaned according to the surface characteristics of the object to be cleaned, feeding back a real-time detection result of the real-time surface characteristic detection system to the central processor, automatically adjusting corresponding parameters of the process flow of the object to be cleaned, and sending a parameter adjustment information instruction to the surface pretreatment cavity and the surface cleaning cavity.
The surface pretreatment cavity comprises a chemical mechanical polishing treatment cavity, a laser treatment cavity, a plasma treatment cavity, a surface film growth cavity and a surface film removal cavity; the object outlet end of the chemical mechanical polishing treatment cavity is connected with the object inlet end of the laser treatment cavity; the object outlet end of the laser processing cavity is connected with the object inlet end of the plasma processing cavity; the object outlet end of the plasma processing cavity is connected with the object inlet end of the surface film growth cavity; the object outlet end of the surface film growth cavity is connected with the object inlet end of the surface film removal cavity;
the chemical mechanical polishing processing cavity is respectively connected with the central information processing system and the real-time surface characteristic detection system; the laser processing cavity, the plasma processing cavity and the surface film removing cavity are respectively and electrically connected with a real-time surface characteristic detection system; the surface film growth cavity is electrically connected with a real-time surface film characteristic detection system.
The chemical mechanical polishing treatment cavity is used for carrying out surface treatment on the object in the chemical mechanical polishing treatment cavity by utilizing a chemical and mechanical surface treatment mode according to the requirement of the surface state of the object in the cavity;
the laser processing cavity is used for processing the surface of an object by utilizing lasers with different wavelengths according to the requirement of the surface state of the object in the cavity; the energy of the laser and the generation mode of the laser, such as pulse and continuous laser, are also set according to the requirements of the surface state of the object.
The plasma processing cavity is used for selecting the type of plasma according to the requirement of the surface state of an object in the cavity and carrying out plasma flow, power and energy parameters of plasma processing according to the requirement of the surface state of the object;
the surface film growth cavity is used for selecting the film types and the thicknesses corresponding to the film types according to the requirements of the surface state of the object in the cavity, and performing film rising processing on the object by a film processing method corresponding to the requirements of the surface state of the object;
the surface film removing cavity is used for selecting a film removing mode corresponding to the requirement of the surface state of the object according to the requirement of the surface state of the object in the cavity and removing the film on the surface of the object.
The surface cleaning cavity comprises an object cleaning cavity, a Doppler light source, a laser light source, a high-energy particle source, an electromagnetic wave source, a magnetic field forming device, an ultrasonic source, a mechanical vibration source, a fluid power source and a gas power source; the Doppler light source, the laser light source, the high-energy particle source, the electromagnetic wave source, the magnetic field forming device, the ultrasonic wave source, the mechanical vibration source, the fluid power source and the gas power source are respectively arranged on the object cleaning cavity; the Doppler light source, the laser light source, the high-energy particle source, the electromagnetic wave source, the magnetic field forming device, the ultrasonic wave source, the mechanical vibration source, the fluid power source and the gas power source are respectively and electrically connected with the central information processing system; the object cleaning cavity is electrically connected with the real-time surface characteristic detection system.
The object cleaning cavity is used for carrying out object cleaning parameters and method configuration according to the type of objects in the cavity and user requirements and cleaning the surface of the objects in the cavity;
the Doppler light source comprises a broad-spectrum light source from ultraviolet to infrared and is used for determining the broad-spectrum light source corresponding to the surface cleaning treatment requirement of the object and/or the wavelength and the energy of light waves corresponding to the broad-spectrum light source according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the laser light source comprises a laser light source from ultraviolet to infrared and is used for determining the laser light source and/or the laser wavelength corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity; the energy of the laser and the generation mode of the laser, such as pulse and continuous laser, are also set according to the requirements of the surface state of the object.
The electromagnetic wave source comprises a radio frequency source from millimeter waves to micron waves and is used for determining the frequency of electromagnetic waves corresponding to the surface cleaning treatment requirement of the object according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity; the energy of the electromagnetic wave and the generation method of the electromagnetic wave, such as pulse and continuous laser, are also set according to the requirements of the surface state of the object.
The magnetic field generating device comprises a direct-current magnetic field and an alternating-current magnetic field forming device and is used for determining the strength and polarity of a formed direct-current magnetic field or an alternating-current magnetic field corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the ultrasonic source is used for selecting ultrasonic frequency and energy corresponding to the requirement of the surface state of the object according to the requirement of the surface state of the object in the cavity.
The mechanical vibration source is used for determining the intensity of mechanical vibration waves corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity; and the mechanical vibration wave generation mode, such as continuous or intermittent, including the length of the intermittent time, etc., are also set according to the requirements of the surface state of the object.
The fluid power source is used for determining the flow rate, pressure and temperature of fluid corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, surface state density and surface tension of the object in the object cleaning cavity; and the generation mode of the fluid, such as continuous or intermittent, including the length of the intermittent time, and the like, are also set according to the requirements of the surface state of the object.
The gas power source is used for determining the gas type corresponding to the object surface cleaning treatment requirement, the gas flow, the pressure and the temperature corresponding to the gas type, the fluid generation mode such as continuous or intermittent including the length of intermittent time and the like according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity, and controlling the solubility parameter corresponding to the gas type.
The working principle of the technical scheme is as follows: the method and conditions of surface pretreatment are determined according to the requirements of device performance, such as adjusting surface tension by adopting chemical mechanical polishing, growing a silicon nitride film by plasma sputtering, measuring the thickness of the film by using a polarized light method, and then removing the silicon nitride film by using wet etching. The method and conditions for cleaning the surface are determined according to the performance requirements of the device, such as cleaning with hydrofluoric acid, and then cleaning with heated deionized water under ultrasonic and visible light irradiation. Non-contact surface capacitance measurement is used to obtain silicon carbide surface data, such as surface state density, surface tension, etc. The surface flatness and the particle contamination state were measured by light diffraction and reflection.
The central information processing system determines whether further processing is required based on the measurement of the cleaning state of the surface of the object and compared to the requirements of the customer or the process application.
As shown in fig. 4, the surface pretreatment chamber is a chemical mechanical polishing treatment chamber, a laser treatment chamber, a plasma treatment chamber, a surface thin film growth chamber and a surface thin film removal chamber. The chemical mechanical polishing processing chamber can select the chemical mechanical processing mode and material according to the surface state requirement, such as grinding, polishing and the like. The laser treatment cavity can select the wavelength, period (continuous or pulse), power and the like of the laser according to the requirements of the surface state. The plasma processing chamber can select the type, flow, power, energy and the like of the plasma according to the requirements of the surface state. The surface film growth cavity can select the thickness of the film (comprising an inorganic film, an organic film, and the like) and the method for growing the film, such as chemical vapor deposition-CVD, plasma chemical vapor deposition, power, and the like according to the requirements of the surface state. The surface film removing cavity can select a film removing method according to the requirement of the surface state, such as plasma bombardment, chemical corrosion and the like. The Central Information Processing System (CIPS) can select proper surface pretreatment and treatment process flow layer according to the surface characteristics of the treated object, including a cleaning source required by a cleaning cavity, and feeds back the real-time surface characteristic detection result to the central processing unit, and the intelligent optimal surface treatment scheme can automatically adjust the process treatment flow and send the process instruction to the equipment end. As shown in fig. 5, the surface cleaning chamber includes an object cleaning chamber, a doppler light source, a laser light source, a high-energy particle source, an electromagnetic wave source, a magnetic field forming device, an ultrasonic wave source, a mechanical vibration source, a fluid power source, and a gas power source. Specifically, the method comprises the following steps:
the object cleaning chamber can be configured according to customer requirements, such as cleaning of semiconductor integrated circuit wafers, and can be configured as a single-wafer and multi-wafer cleaning chamber. The multispectral light source is a broad spectrum light source from ultraviolet to infrared, such as from 300 nanometers to 20 micrometers, and can be a broad spectrum or a broad spectrum with a selected optical wavelength range according to the requirements of surface chemical potential, surface state density, surface tension, and the like. The laser light source is from ultraviolet to infrared, ranging from ultraviolet laser with a wavelength of 400 nm to infrared laser with a wavelength of 10.6 μm, and the laser wavelength can be selected according to the needs of surface chemical potential, surface state density, surface tension, and the like. The high-energy particle source can adopt a plasma charged particle source, and is suitable for cleaning a single wafer or single or multiple objects. The electromagnetic wave source is a radio frequency source from millimeter wave to micron wave, and the frequency of the electromagnetic wave can be selected according to the requirements of surface chemical potential, surface state density, surface tension, and the like. The magnetic field generating device is used for generating a magnetic field, and specifically includes a direct current magnetic field and an alternating current magnetic field, and the direct current magnetic field or the alternating current magnetic field and the strength and polarity of the magnetic field can be selected according to the requirements of surface chemical potential, surface state density, surface tension, and the like. The ultrasonic source can adopt an ultrasonic generator and can generate ultrasonic waves with different frequencies and powers. The mechanical vibration source may determine the intensity of the mechanical vibration wave according to the requirements of surface chemical potential, surface state density, surface tension, and the like. The fluid power source may determine the flow rate, pressure, temperature, etc. of the fluid according to the requirements of surface chemical potential, surface state density, surface tension, etc. The gas power source can determine the flow rate, pressure, temperature, etc. of the gas species on the surface of the object to be cleaned according to the requirements of surface chemical potential, surface state density, surface tension, etc., and control the gas species in the cleaning liquid and related parameters, such as solubility, etc.
The effect of the above technical scheme is as follows: according to the surface characteristics of different materials, such as metal, semiconductor (element and compound semiconductor), insulator and the like, one or more cleaning methods can be respectively adopted to clean the object to be cleaned so as to ensure that the surface state required by the application is obtained. Each cleaning cavity is provided with a real-time detection device for the surface state of an object. Meanwhile, real-time feedback is carried out to obtain the surface state of the object required by the device and industrial application. And the central information processing system coordinates the cleaning process and adjusts parameters according to the requirements of customers and the real-time state of the surface of the cleaned object. The device and the method provided by the invention can be used for cleaning objects, can coordinate a plurality of objects to be cleaned to perform surface cleaning operation at the same time, and effectively improve the cleaning efficiency. Meanwhile, the reliability of system operation and the cleaning precision and the cleaning quality of object cleaning can be effectively improved through process coordination and parameter adjustment, so that the surface of the cleaned object can meet the requirements of customers to a great extent, and the customer satisfaction is improved.
The embodiment of the invention provides an intelligent combined surface cleaning method, as shown in fig. 1 and fig. 2, the intelligent combined surface cleaning equipment is adopted for surface cleaning, and the specific process comprises the following steps:
step 1, a central information processing system receives information of an object to be cleaned input by a user, determines a corresponding object cleaning scheme according to the type and the surface condition of the object to be cleaned, and sends each instruction corresponding to the object cleaning scheme to a surface pretreatment cavity, a surface cleaning cavity and a real-time characteristic detection system;
step 2, sending the object to be cleaned into a surface pretreatment cavity, and pretreating the surface of the object to be cleaned through the surface pretreatment cavity according to a cleaning scheme provided by a central information processing system to obtain a pretreated object to be cleaned;
step 3, sending the object to be cleaned after pretreatment into a surface cleaning cavity, controlling the surface cleaning cavity to select a cleaning source according to the surface condition of the object to be cleaned after pretreatment by the central information processing system, and determining relevant parameters of the cleaning source in the object surface cleaning process according to the surface condition requirement of the object in the object cleaning cavity;
step 4, cleaning the surface of the object to be cleaned after pretreatment by using the surface cleaning cavity, feeding back the surface state of the object to be cleaned to the central information processing system in real time through the real-time surface film characteristic detection system in the cleaning process, and judging whether the surface state accords with the requirement preset by a user; if yes, ending the cleaning process; if not, executing step 5;
and 5, returning the cleaned object to the surface pretreatment cavity, and repeating the steps 2 to 4 until the surface condition of the cleaned object meets the preset requirements of the customer.
Wherein, the step 2 of sending the object to be cleaned into the surface pretreatment cavity, and pretreating the surface of the object to be cleaned through the surface pretreatment cavity according to the cleaning scheme provided by the central information processing system to obtain the pretreated object to be cleaned comprises the following steps:
step 201, determining whether the object to be cleaned has a requirement on the state of surface atoms and electrons, if so, sending the object to be cleaned into a chemical mechanical polishing processing chamber for surface chemical mechanical polishing, and if not, entering a laser processing chamber;
step 202, selecting corresponding laser wavelength, period and power by the laser processing cavity according to the requirement of the surface of the object, carrying out surface processing on the object, and feeding back the surface state of the object to a central information processing system through a real-time surface characteristic detection system; the central information processing system sends the difference between the fed back object expression state and the user requirement back to the surface pretreatment cavity, controls the laser treatment cavity to carry out laser treatment adjustment on the treated object according to the difference condition, and indicates the surface pretreatment cavity to send the treated object into the plasma treatment cavity after the laser treatment is finished;
step 203, the plasma processing cavity determines the type, flow, power and energy parameters of plasma according to the requirement of the surface state of the processed object, performs plasma processing on the processed object, and feeds the surface state of the object back to the central information processing system through the real-time surface characteristic detection system; when the surface state of the processed object meets the parameters preset by a user, sending the processed object into a surface film growth cavity;
204, the surface film growth cavity determines the type and thickness of a film and a method for growing the film according to the surface requirement of the object to be processed, the object to be processed is subjected to film growth processing, meanwhile, the surface state of the object is fed back to a central information processing system through a real-time surface characteristic detection system, the central information processing system sends the difference between the object expression state fed back and the user requirement back to the surface film growth cavity, the surface film growth cavity adjusts the film growth process according to the fed-back difference, and instructs the surface film growth cavity to send the object to be processed into a surface film removal cavity after the surface film growth cavity is guided to meet the preset parameters of the user;
step 205, the surface film removing cavity determines a film removing method according to the surface requirement of the object to be processed, performs film removing processing, feeds back the surface state of the object to the central information processing system through the real-time surface characteristic detection system, the central information processing system sends back the difference between the object performance state fed back and the user requirement to the surface film removing cavity, and adjusts the film removing process to obtain the object to be cleaned after pretreatment;
and step 206, detecting the surface state of the pretreated object to be cleaned through the real-time surface characteristic detection system, feeding detection information back to the central information processing system, judging whether the pretreated object to be cleaned meets the user requirement or not through the central information processing system, if so, sending the pretreated object to be cleaned into the surface cleaning cavity, and if not, repeating the contents of the steps 201 to 205 until the surface state of the pretreated object to be cleaned meets the user requirement.
The working principle of the technical scheme is as follows: a combined surface cleaning equipment composed of multiple cleaning cavities is designed by using advanced technologies such as optics, electricity, magnetism, acoustics, chemistry, plasma, sensors, bioelectronics, artificial intelligence and the like, one or more cleaning methods are respectively or simultaneously adopted according to the surface characteristics of different materials such as metal, semiconductor (element and compound semiconductor), insulators and the like, and pre-cleaning and cleaning methods corresponding to various objects are stored in a central information processing system of the equipment. According to the requirements of the object (semiconductor wafer, metal, mechanical part, etc.) to be cleaned, such as surface flatness, cleanliness, surface tension, atomic and lattice states of solid surface, etc., the central processing system selects a corresponding object cleaning scheme, including a pre-cleaning and cleaning scheme, and issues instructions to various parts of the system, such as a surface pre-treatment chamber, a surface film property measuring unit, a surface property measuring unit, etc. The object to be cleaned will first enter a surface preparation chamber. The surface pretreatment cavity consists of a plurality of sub-cavities, namely a chemical mechanical treatment cavity, a laser treatment cavity, a plasma treatment cavity, a surface film growth cavity, a surface film removal cavity and the like.
The central processing system selects the type, flow, power, energy, etc. of the plasma as required by the surface conditions. If the cleaning object has the requirement of surface atomic and electronic state, the chemical mechanical treatment mode, such as grinding, polishing, etc., is selected according to the requirement of surface state. If not, entering a laser processing chamber, selecting the wavelength, period (continuous or pulse), power and the like of the laser according to the requirement of the surface state to carry out surface processing, feeding back the surface state of the processed object to a Central Information Processing System (CIPS) in real time by a surface characteristic measuring device, sending back the difference with the requirement of a user to a surface pretreatment unit to indicate that the object enters a plasma processing chamber, selecting the type, flow, power, energy and the like of plasma according to the requirement of the surface state by the plasma processing chamber, feeding back the surface state of the plasma processed object to the Central Information Processing System (CIPS) in real time by the surface characteristic measuring device, feeding the object reaching a preset standard into a surface film growth chamber, selecting the thickness of the type (including inorganic film, organic film and the like) of the film according to the requirement of the surface state, and growing the film, such as chemical vapor deposition-CVD, plasma chemical vapor deposition, power, etc.), the surface property measuring device feeds back the properties of the grown film to a Central Information Processing System (CIPS) in real time, the CIPS feeds back the differences from the user's requirements to the film growth chamber of the surface pretreatment unit, indicating that the object enters the surface film removal chamber, selecting a film removal method such as plasma bombardment, chemical corrosion, etc., according to the needs of the surface state, the surface property measuring device feeds back the surface state of the processed object to the Central Information Processing System (CIPS) in real time, the CIPS feeds back the differences from the user's requirements to the surface pretreatment unit, if there are differences, the object returns to the surface pretreatment unit, surface retreats by an adjusted processing method according to the instructions of the CIPS, if there are no differences, the object enters an intelligent surface cleaning unit, the unit consists of the following core parts:
the intelligent surface cleaning device comprises an object cleaning cavity, a multispectral light source, a laser light source, a high-energy particle source, an electromagnetic wave source, a magnetic field, an ultrasonic wave source, a mechanical vibration source, a fluid power source, a gas power source and a CIPS (cleaning in place) which specific surface treatment method should be adopted by the intelligent surface cleaning unit according to the surface state indication of an object after surface pretreatment, wherein the specific surface treatment method comprises the types, the concentration and the number of cleaning sources of a chemical cleaning solvent and the like. The surface characteristic detection system comprises non-contact surface capacitance measurement, polarized light measurement and the like, the surface state of the processed object is fed back to a Central Information Processing System (CIPS) in real time, if the surface state of the object meets the user requirements, the surface cleaning process is finished, if the surface state of the object meets the user requirements, the object is sent back to the surface pretreatment unit, and the CIPS instructs the surface cleaning unit to adopt the adjusted processing method until the surface state of the object meets the requirements.
The effect of the above technical scheme is as follows: according to the surface characteristics of different materials, such as metal, semiconductor (element and compound semiconductor), insulator and the like, one or more cleaning methods can be respectively adopted to clean the object to be cleaned so as to ensure that the surface state required by the application is obtained. Each cleaning cavity is provided with a real-time detection device for the surface state of an object. Meanwhile, real-time feedback is carried out to obtain the surface state of the object required by the device and industrial application. And the central information processing system coordinates the cleaning process and adjusts parameters according to the requirements of customers and the real-time state of the surface of the cleaned object. The device and the method provided by the invention can be used for cleaning objects, can coordinate a plurality of objects to be cleaned to perform surface cleaning operation at the same time, and effectively improve the cleaning efficiency. Meanwhile, the reliability of system operation and the cleaning precision and the cleaning quality of object cleaning can be effectively improved through process coordination and parameter adjustment, so that the surface of the cleaned object can meet the requirements of customers to a great extent, and the customer satisfaction is improved.
In an embodiment of the present invention, the method for cleaning an intelligent combined surface further includes that during the process of preprocessing an object to be cleaned, the real-time surface characteristic detection system monitors in real time whether there is a delay in data sent from the real-time surface characteristic detection system to the central information processing system according to the following formula:
Figure GDA0003233124820000131
wherein, T represents the reference time of data transmission delay, and when T exceeds the preset reference time threshold, the data transmission delay exists; qcA characteristic constant representing a transmission medium of the electronic device; t is1Representing the time for the real-time surface property detection system to send data to a central information processing system; t is2Representing the time for the central information processing system to feed back the corresponding data to the real-time surface characteristic detection system; c1Data volume which represents that the real-time surface characteristic detection system sends to a central information processing system at a single time; c2Data volume representing corresponding data that the central information processing system feeds back to the real-time surface property detection system at a single time;
when determining that the data of the real-time surface characteristic detection system and the central information processing system are monitored in real time and delayed, adjusting the data feedback rate of the central information processing system by the following formula:
Figure GDA0003233124820000132
where H denotes the adjusted data feedback rate, H0Indicating a data feedback rate at which there is currently a delay; Δ H represents a data feedback rate adjustment amount, T, of the central information processing system0Represents a reference time threshold; v1Representing the rate at which the real-time surface property detection system sends data to the central information processing system a single time; v2Representing the rate of single feedback of corresponding data to the real-time surface characteristic detection system by the central information processing system; v1iThe speed of sending data to the central information processing system by the ith real-time surface characteristic detection system is represented; v2iDenotes in the ith timeThe central information processing system feeds back the speed of corresponding data to the real-time surface characteristic detection system; t is1iThe time length for the ith real-time surface characteristic detection system to send data to the central information processing system is represented; t is2iThe time length for the ith central information processing system to feed back the corresponding data to the real-time surface characteristic detection system is represented; n represents the data transmission times of the real-time surface characteristic detection system for transmitting data to the central information processing system, and m represents the data feedback times of the central information processing system for feeding back corresponding data to the real-time surface characteristic detection system.
The effect of the above technical scheme is as follows: in the actual operation application process, the cleaning object is usually a chip or other small object, if a large data delay occurs in the data transmission process between the real-time surface characteristic detection system and the central information processing system, the problem that parameters and process adjustment in the pretreatment or cleaning process are not timely due to untimely data transmission feedback is likely to occur, and further the pretreatment and cleaning of the processed object cannot reach the user standard or can reach the index required by the user only after a long time or more cleaning times. Therefore, whether data transmission delay exists in the data transmission feedback process can be effectively monitored by monitoring the time delay of data transmission through the formula, meanwhile, the delay amount in the data feedback process can be effectively reduced through adjustment of the data transmission rate, the timeliness of data transmission is effectively improved, the pretreatment and cleaning precision is further improved, and the pretreatment and cleaning efficiency is improved. Meanwhile, the accuracy and the rationality of data delay monitoring can be effectively improved by determining the delay according to the formula, the frequency of adjusting the transmission rate of feedback data is reduced under the condition that the data transmission can effectively ensure the reliability, the high efficiency and the high accuracy of cleaning operation, the problem of unstable system operation caused by frequent rate adjustment is prevented, and the stability of system equipment operation is further improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (9)

1. An intelligent combined surface cleaning device is characterized by comprising a surface pretreatment cavity, a surface cleaning cavity, a real-time characteristic detection system and a central information processing system; the surface pretreatment cavity is electrically connected with the surface cleaning cavity, the real-time characteristic detection system and the central information processing system respectively; the surface cleaning cavity is electrically connected with the real-time characteristic detection system and the central information processing system; the real-time characteristic detection system is electrically connected with the central information processing system, wherein the surface pretreatment cavity comprises a chemical mechanical polishing processing cavity, a laser processing cavity, a plasma processing cavity, a surface film growth cavity and a surface film removal cavity; the object outlet end of the chemical mechanical polishing treatment cavity is connected with the object inlet end of the laser treatment cavity; the object outlet end of the laser processing cavity is connected with the object inlet end of the plasma processing cavity; the object outlet end of the plasma processing cavity is connected with the object inlet end of the surface film growth cavity; the object outlet end of the surface film growth cavity is connected with the object inlet end of the surface film removal cavity;
the chemical mechanical polishing processing cavity is respectively connected with the central information processing system and the real-time surface characteristic detection system; the laser processing cavity, the plasma processing cavity and the surface film removing cavity are respectively and electrically connected with a real-time surface characteristic detection system; the surface film growth cavity is electrically connected with a real-time surface film characteristic detection system.
2. The apparatus of claim 1, wherein the real-time property detection system comprises a real-time surface property detection system and a real-time surface film property detection system; the real-time surface characteristic detection system is electrically connected with the surface pretreatment cavity, the surface cleaning cavity and the central information processing system respectively.
3. The device according to claim 1, wherein the central information processing system comprises a central controller for selecting a surface pretreatment scheme, a process flow and a cleaning source of the surface cleaning chamber corresponding to the surface characteristics of the object to be cleaned according to the surface characteristics of the object to be cleaned, and for feeding back a real-time detection result of the real-time surface characteristic detection system to the central processor, automatically adjusting corresponding parameters of the process flow of the object to be cleaned, and sending a parameter adjustment information instruction to the surface pretreatment chamber and the surface cleaning chamber.
4. The apparatus according to claim 1, wherein the chemical mechanical polishing chamber is configured to perform a surface treatment on the object in the chemical mechanical polishing chamber by using a chemical and mechanical surface treatment method according to the requirement of the surface state of the object in the chamber;
the laser processing cavity is used for processing the surface of an object by utilizing lasers with different wavelengths according to the requirement of the surface state of the object in the cavity; the energy of the laser and the generation mode of the laser adopt pulse and continuous laser;
the plasma processing cavity is used for selecting the type of plasma according to the requirement of the surface state of an object in the cavity and carrying out plasma flow, power and energy parameters of plasma processing according to the requirement of the surface state of the object;
the surface film growth cavity is used for selecting the film types and the thicknesses corresponding to the film types according to the requirements of the surface state of the object in the cavity, and performing film rising processing on the object by a film processing method corresponding to the requirements of the surface state of the object;
the surface film removing cavity is used for selecting a film removing mode corresponding to the requirement of the surface state of the object according to the requirement of the surface state of the object in the cavity and removing the film on the surface of the object.
5. The apparatus of claim 1, wherein the surface cleaning chamber comprises an object cleaning chamber, a doppler light source, a laser light source, a high energy particle source, an electromagnetic wave source, a magnetic field forming device, an ultrasonic wave source, a mechanical vibration source, a fluid power source, and a gas power source; the Doppler light source, the laser light source, the high-energy particle source, the electromagnetic wave source, the magnetic field forming device, the ultrasonic wave source, the mechanical vibration source, the fluid power source and the gas power source are respectively arranged on the object cleaning cavity; the Doppler light source, the laser light source, the high-energy particle source, the electromagnetic wave source, the magnetic field forming device, the ultrasonic wave source, the mechanical vibration source, the fluid power source and the gas power source are respectively and electrically connected with the central information processing system; the object cleaning cavity is electrically connected with the real-time surface characteristic detection system.
6. The apparatus of claim 5, wherein the object cleaning chamber is configured to perform object cleaning parameters and method configurations according to the type of objects in the chamber and user requirements, and to clean the surface of the objects in the chamber;
the Doppler light source comprises a broad-spectrum light source from ultraviolet to infrared and is used for determining the broad-spectrum light source corresponding to the object surface cleaning treatment requirement and/or the light wave wavelength corresponding to the broad-spectrum light source according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the laser light source comprises a laser light source from ultraviolet to infrared and is used for determining the laser light source and/or the laser wavelength corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the electromagnetic wave source comprises a radio frequency source from millimeter waves to micron waves and is used for determining the frequency of electromagnetic waves corresponding to the surface cleaning treatment requirement of the object according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity, and the energy of the electromagnetic waves and the generation mode of the electromagnetic waves comprise pulses and continuous electromagnetic waves;
the magnetic field generating device comprises a direct-current magnetic field and alternating-current magnetic field forming device and is used for determining the strength and polarity of a formed direct-current magnetic field or an alternating-current magnetic field corresponding to the surface cleaning treatment requirement of the object according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity;
the ultrasonic source is used for selecting ultrasonic frequency and power corresponding to the requirement of the surface state of the object according to the requirement of the surface state of the object in the cavity;
the mechanical vibration source is used for determining the intensity of mechanical vibration waves corresponding to the requirement of the surface cleaning treatment of the object and the generation mode of the mechanical vibration waves according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity, wherein the generation mode of the mechanical vibration waves comprises continuous generation and intermittent generation, and the length of the intermittent time is set when the intermittent generation is selected;
the fluid power source is used for determining the flow rate, pressure, temperature and fluid generation mode corresponding to the object surface cleaning treatment requirement according to the surface chemical potential, surface state density and surface tension of the object in the object cleaning cavity, wherein the fluid generation mode comprises a continuous generation mode and an intermittent generation mode, and the intermittent time is set when the intermittent generation mode is selected;
the gas power source is used for determining a gas type corresponding to the object surface cleaning treatment requirement, a gas flow rate, a pressure, a temperature and a gas generation mode corresponding to the gas type according to the surface chemical potential, the surface state density and the surface tension of the object in the object cleaning cavity, wherein the gas generation mode comprises a continuous generation mode and an intermittent generation mode, and the time is set when the intermittent generation mode is selected; and controlling a solubility parameter corresponding to the gas species.
7. An intelligent combined surface cleaning method, which is characterized in that the intelligent combined surface cleaning equipment according to any one of claims 1-6 is adopted for surface cleaning, and the specific process comprises the following steps:
step 1, a central information processing system receives information of an object to be cleaned input by a user, determines a corresponding object cleaning scheme according to the type and the surface condition of the object to be cleaned, and sends each instruction corresponding to the object cleaning scheme to a surface pretreatment cavity, a surface cleaning cavity and a real-time characteristic detection system;
step 2, sending the object to be cleaned into a surface pretreatment cavity, and pretreating the surface of the object to be cleaned through the surface pretreatment cavity according to a cleaning scheme provided by a central information processing system to obtain a pretreated object to be cleaned;
step 3, sending the object to be cleaned after pretreatment into a surface cleaning cavity, controlling the surface cleaning cavity to select a cleaning source according to the surface condition of the object to be cleaned after pretreatment by the central information processing system, and determining relevant parameters of the cleaning source in the object surface cleaning process according to the surface condition requirement of the object in the object cleaning cavity;
step 4, cleaning the surface of the object to be cleaned after pretreatment by using the surface cleaning cavity, feeding back the surface state of the object to be cleaned to the central information processing system in real time through the real-time surface characteristic detection system in the cleaning process, and judging whether the surface state accords with the requirement preset by a user; if yes, ending the cleaning process; if not, executing step 5;
and 5, returning the cleaned object to the surface pretreatment cavity, and repeating the steps 2 to 4 until the surface condition of the cleaned object meets the preset requirements of the customer.
8. The method according to claim 7, wherein the step 2 of feeding the object to be cleaned into the surface pretreatment chamber, and pretreating the surface of the object to be cleaned through the surface pretreatment chamber according to the cleaning scheme provided by the central information processing system to obtain the pretreated object to be cleaned comprises the following steps:
step 201, determining whether the object to be cleaned has the requirements of surface atoms and electronic states, if so, sending the object to be cleaned into a chemical mechanical polishing processing cavity for surface chemical mechanical polishing, and if not, entering a laser processing cavity;
step 202, selecting corresponding laser wavelength, period and power by the laser processing cavity according to the requirement of the surface of the object, carrying out surface processing on the object, and feeding back the surface state of the object to a central information processing system through a real-time surface characteristic detection system; the central information processing system sends the difference between the fed back object expression state and the user requirement back to the surface pretreatment cavity, controls the laser treatment cavity to carry out laser treatment adjustment on the treated object according to the difference condition, and indicates the surface pretreatment cavity to send the treated object into the plasma treatment cavity after the laser treatment is finished;
step 203, the plasma processing cavity determines the type, flow, power and energy parameters of plasma according to the requirement of the surface state of the processed object, performs plasma processing on the processed object, and feeds the surface state of the object back to the central information processing system through the real-time surface characteristic detection system; when the surface state of the processed object meets the parameters preset by a user, sending the processed object into a surface film growth cavity;
204, the surface film growth cavity determines the type and thickness of a film and a method for growing the film according to the surface requirement of the object to be processed, the object to be processed is subjected to film growth processing, meanwhile, the surface state of the object is fed back to a central information processing system through a real-time surface characteristic detection system, the central information processing system sends the difference between the fed back object surface state and the user requirement back to the surface film growth cavity, the surface film growth cavity adjusts the film growth process according to the fed back difference until the difference meets the preset parameters of the user, and the surface film growth cavity is instructed to send the object to be processed into a surface film removal cavity;
step 205, the surface film removing cavity determines a film removing method according to the surface requirement of the object to be processed, performs film removing processing, feeds back the surface state of the object to the central information processing system through the real-time surface characteristic detection system, the central information processing system sends back the difference between the object performance state fed back and the user requirement to the surface film removing cavity, and adjusts the film removing process to obtain the object to be cleaned after pretreatment;
and step 206, detecting the surface state of the pretreated object to be cleaned through the real-time surface characteristic detection system, feeding detection information back to the central information processing system, judging whether the pretreated object to be cleaned meets the user requirement or not through the central information processing system, if so, sending the pretreated object to be cleaned into the surface cleaning cavity, and if not, repeating the contents of the steps 201 to 205 until the surface state of the pretreated object to be cleaned meets the user requirement.
9. The method according to claim 7, wherein the intelligent combined surface cleaning method further comprises the step of monitoring whether the data sent by the real-time surface characteristic detection system to the central information processing system has time delay or not in real time by the following formula during the pretreatment of the object to be cleaned:
Figure FDA0003233124810000041
wherein, T represents the reference time of data transmission delay, and when T exceeds the preset reference time threshold, the data transmission delay exists; qcA characteristic constant representing a transmission medium of the electronic device; t is1Representing the time for the real-time surface property detection system to send data to a central information processing system; t is2Representing the time for the central information processing system to feed back the corresponding data to the real-time surface characteristic detection system; c1Data volume which represents that the real-time surface characteristic detection system sends to a central information processing system at a single time; c2Data volume representing corresponding data that the central information processing system feeds back to the real-time surface property detection system at a single time;
when determining that the data of the real-time surface characteristic detection system and the central information processing system are monitored in real time and delayed, adjusting the data feedback rate of the central information processing system by the following formula:
Figure FDA0003233124810000051
where H denotes the adjusted data feedback rate, H0Indicating a data feedback rate at which there is currently a delay; Δ H represents a data feedback rate adjustment amount, T, of the central information processing system0Represents a reference time threshold; v1Representing the rate at which the real-time surface property detection system sends data to the central information processing system a single time; v2Representing the rate of single feedback of corresponding data to the real-time surface characteristic detection system by the central information processing system; v1iThe speed of sending data to the central information processing system by the ith real-time surface characteristic detection system is represented; v2iThe speed of feeding back corresponding data to the real-time surface characteristic detection system by the ith central information processing system is represented; t is1iThe time length for the ith real-time surface characteristic detection system to send data to the central information processing system is represented; t is2iThe time length for the ith central information processing system to feed back the corresponding data to the real-time surface characteristic detection system is represented; n represents the data transmission times of the real-time surface characteristic detection system for transmitting data to the central information processing system, and m represents the data feedback times of the central information processing system for feeding back corresponding data to the real-time surface characteristic detection system.
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