CN112366166A - Method for obtaining electrostatic chuck pattern and method for correcting wafer center - Google Patents
Method for obtaining electrostatic chuck pattern and method for correcting wafer center Download PDFInfo
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- CN112366166A CN112366166A CN202011114402.6A CN202011114402A CN112366166A CN 112366166 A CN112366166 A CN 112366166A CN 202011114402 A CN202011114402 A CN 202011114402A CN 112366166 A CN112366166 A CN 112366166A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000007789 gas Substances 0.000 claims description 78
- 239000010408 film Substances 0.000 claims description 52
- 239000010409 thin film Substances 0.000 claims description 26
- 238000009826 distribution Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 11
- 239000005049 silicon tetrachloride Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 claims description 5
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 5
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 5
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 5
- 238000012546 transfer Methods 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 description 29
- 238000005530 etching Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010336 energy treatment Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002336 sorption--desorption measurement Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The invention discloses a method for obtaining an electrostatic chuck pattern and a method for correcting a wafer center, wherein the method for obtaining the electrostatic chuck pattern at least comprises the following steps: providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with a pattern; introducing plasma gas into the cavity to form a film on the electrostatic chuck; and bonding the film through a wafer to obtain the pattern, wherein the pattern is transferred on the film. The invention can transfer the pattern on the electrostatic chuck, thereby accurately correcting the center of the wafer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for obtaining an electrostatic chuck pattern and a method for correcting a wafer center.
Background
At present, after a wafer is transmitted to an electrostatic chuck in a reaction cavity in an etching machine, if the wafer center point deviates, and the conditions such as wafer uniformity deviation or wafer adsorption failure are caused, the reaction cavity needs to be opened by breaking vacuum to correct the deviation of the wafer center point, however, after the wafer is broken, when the etching machine recovers a production line again, the vacuum pumping and leakage rate detection need to be carried out again, and the machine is tested again, and a person is waited to return the line after judging that no abnormality exists, so that a large amount of time which can be used for production is undoubtedly lost. Meanwhile, in the etching process, the interior of the reaction chamber is slightly etched by using weaker oxygen and argon plasmas for cleaning, so that the plasma gas is single in use.
Disclosure of Invention
In view of the defects of the prior art, the invention provides a method for obtaining a pattern of an electrostatic chuck and a method for correcting the center of a wafer, which can transfer the pattern on the electrostatic chuck, accurately confirm the offset between the center of the wafer and the center of the electrostatic chuck, further accurately correct the center of the wafer, do not need to break the vacuum environment, do not need to restore the production line of an etching machine, and greatly reduce the production process flow and the production time.
In order to achieve the above objects and other objects, the present invention provides a method for obtaining an electrostatic chuck pattern, comprising at least the following steps:
providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with a pattern;
introducing plasma gas into the cavity to form a film on the electrostatic chuck, wherein the film covers the electrostatic chuck;
bonding the film through a wafer to obtain the pattern, wherein the pattern is transferred on the film;
the plasma gas at least comprises a first gas and a second gas, and the molar ratio of the first gas to the second gas is (0.5-5): 1.
in one embodiment, the first gas is octafluorocyclobutane and the second gas is hexafluorobutadiene.
In one embodiment, the first gas is silicon tetrachloride and the second gas is oxygen.
In one embodiment, the plasma gas has a density of 5000g/cm-3To 9X 1012g/ cm-3 。
In one embodiment, the temperature required for forming the thin film is 30-100 ℃.
In one embodiment, the center of the pattern coincides with the center of the electrostatic chuck, and the pattern is distributed annularly on the electrostatic chuck.
In one embodiment, the area coverage area of the film is larger than the area of the pattern.
In one embodiment, the chamber is a reaction chamber in an etching machine.
In one embodiment, the flat surface of the wafer is brought into contact with the electrostatic chuck during the bonding of the thin film by the wafer.
The invention also aims to provide a method for correcting the center of the wafer, which at least comprises the following steps:
providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with a pattern;
introducing plasma gas into the cavity to form a film on the chuck, wherein the film covers the electrostatic chuck;
bonding the film through a first wafer to obtain the pattern, wherein the pattern is transferred on the film;
the first wafer is conveyed into or out of the cavity through a conveying device;
optically scanning the pattern on the film to display the distribution of the pattern;
determining the offset between the center of the pattern and the center of the first wafer according to the distribution condition;
adjusting the position of a second wafer according to the offset to enable the center of the sucker to coincide with the center of the second wafer;
the plasma gas at least comprises a first gas and a second gas, and the molar ratio of the first gas to the second gas is (0.5-5): 1.
in one embodiment, the first wafer includes a wafer body and a silicon oxide layer, and the second wafer is a wafer with integrated circuits.
The invention provides a method for obtaining an electrostatic chuck pattern and a method for correcting a wafer center, wherein the plasma gas is skillfully utilized to form a thin film on an electrostatic chuck, so that the pattern on the electrostatic chuck is transferred by a first wafer, the pattern is displayed in a distribution condition by optical scanning, then the offset between the center of the pattern and the center of the first wafer is measured, the position of a second wafer is adjusted by the offset, and the center of the transferred pattern is superposed with the center of the first wafer, so that the center of the wafer can be accurately corrected, the center of the wafer can be corrected without breaking vacuum, the production line of an etching machine table is not required to be restored, and the production process flow and the production time are greatly reduced.
Drawings
FIG. 1: the method for obtaining the electrostatic chuck pattern in one embodiment of the invention is a flow diagram;
FIG. 2: the flow diagram of the correction method of the wafer center in one embodiment of the invention;
FIG. 3: a schematic diagram of a positional relationship between the mechanical cantilever and the cavity in an embodiment of the present invention;
FIG. 4: a schematic structural view of the electrostatic chuck according to an embodiment of the present invention;
FIG. 5: in an embodiment of the present invention, a distribution of the scanned pattern on the first wafer;
FIG. 6: the corresponding relationship between the holes and the lifting pillars in one embodiment of the invention is shown schematically;
FIG. 7: in an embodiment of the invention, the first wafer is bonded to the thin film on the electrostatic chuck;
FIG. 8: a schematic structural diagram of the first wafer in an embodiment of the invention;
FIG. 9: in an embodiment of the present invention, a relationship between the electrostatic chuck and the film is schematically illustrated.
Description of the symbols
101. A cavity; 102. an electrostatic chuck; 1021. a first hole; 1022. a second hole; 1023. a third hole; 1031. a first lifting column; 1032. a second lifting column; 1033. a third lifting column; 104. a first wafer; 1041. a wafer body; 1042. a silicon oxide layer; 105. a film; 201. a mechanical cantilever.
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention can be easily ascertained by one skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
In the present invention, it should be noted that, as the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, their indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the present application and simplifying the description, but do not indicate or imply that the device or component being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first" and "second," if any, are used for descriptive and distinguishing purposes only and are not to be construed as indicating or implying relative importance.
The invention provides a method for obtaining an electrostatic chuck pattern and a method for correcting a wafer center, wherein the plasma gas is skillfully utilized to form a film on an electrostatic chuck, so that the pattern on the electrostatic chuck is transferred through a first wafer, the pattern is displayed in a distribution condition through optical scanning, then the offset of the pattern center and the first wafer center is measured, the position of a second wafer is adjusted through the offset, and the center of the transferred pattern is superposed with the center of the first wafer, so that the wafer center can be accurately corrected. The invention is suitable for all manufacturing processes which need to use an electrostatic chuck to adsorb the wafer.
Referring to fig. 1, in an embodiment, the method for obtaining an electrostatic chuck pattern at least includes the following steps:
s1, providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with a pattern;
s2, introducing plasma gas into the cavity to form a film on the electrostatic chuck, wherein the film covers the electrostatic chuck;
and S3, bonding the film through a wafer to obtain the pattern, wherein the pattern is transferred on the film.
Specifically, in step S1, as shown in fig. 3 to 6, the chamber is, for example, a reaction chamber on an etching machine, the chamber 101 is located in the etching machine, and when performing an etching process and a film deposition process, a wafer is transferred into the chamber 101 by a transfer apparatus. The number of the cavities 101 is, for example, plural. The electrostatic chuck 102 has a pattern thereon, the center of the pattern coincides with the center of the electrostatic chuck 102, and the pattern is distributed annularly on the electrostatic chuck 102. The electrostatic chuck 102 is supported by, for example, three lift legs. The electrostatic chuck 102 has three holes, which are arranged in a triangle and respectively designated as a first hole 1021, a second hole 1022 and a third hole 1023. The three lifting columns are for example respectively designated as first lifting column 1031, second lifting column 1032 and third lifting column 1033. The three lifting support posts are respectively connected with the three holes, specifically, the first lifting support post 1031 is connected with the first hole 1021, the second lifting support post 1032 is connected with the second hole 1022, and the third lifting support post 1033 is connected with the third hole 1023. The electrostatic chuck 102 is configured to receive a wafer (with the front side of the wafer facing upward and the back side in contact with the electrostatic chuck). The vacuum in the chamber 101 is pumped by a vacuum pump to increase the attraction between the wafer and the electrostatic chuck 102, so that the electrostatic chuck 102 and the wafer can be firmly attracted together, and all patterns on the electrostatic chuck 102 are transferred onto the film 105, and the film 105 is adhered to the wafer.
Specifically, in step S2, referring to fig. 8, the plasma gas not only cleans the cavity, but also accumulates on the electrostatic chuck 102 to polymerize into the thin film 105, and the thin film 105 has good compactness. The area covered by the thin film 105 is larger than the area of the pattern, and the thin film 105 covers the pattern. During the formation of the thin film 105, the plasma gas may form molecular and ionic states that may polymerize on the electrostatic chuck 102 to form the thin film 105. In the process of forming the thin film 105, the temperature in the cavity 101 is, for example, 30 to 100 ℃. The thickness of the thin film 105 is, for example, 50 to 200 nm, specifically, 50 nm, 100 nm, 150 nm, 200 nm, or other thicknesses suitable for the present invention. The film 105 is capable of printing all patterns on the electrostatic chuck 102, including the shape of the electrostatic chuck 102, the various particle shapes on the electrostatic chuck 102, and other shapes that can be printed on the electrostatic chuck 102. The plasma gas at least comprises a first gas and a second gas, and the molar ratio of the first gas to the second gas is (0.5-5): 1, specifically, for example, is (A)0.5: 1),(0.8: 1),(1: 1),(2: 1),(3: 1),(4: 1) or (5: 1). In one embodiment, the first gas is, for example, octafluorocyclobutane and the second gas is, for example, hexafluorobutadiene. In another embodiment, the first gas is, for example, silicon tetrachloride, and the second gas is, for example, oxygen, and, in addition, for example, a carrier gas, such as helium. The density of the plasma gas is, for example, 5000g/cm-3To 9X 1012g/ cm-3 。
Specifically, in step S3, please refer to fig. 7 and 8, in the process of bonding the film through the wafer, the flat surface of the wafer is brought into contact with the electrostatic chuck 102. The wafer includes, for example, a wafer body 1041 and a silicon oxide layer 1042, the silicon oxide layer 1042 is located on the wafer body, also for example, a first wafer 104 described below, and the wafer is used for bonding the film 105 to obtain the pattern. The surface of the silicon oxide layer 1042 is flat, and in the bonding process, for example, the silicon oxide layer 1042 is in contact with the thin film 105, which is more favorable for bonding the thin film 105 and also favorable for displaying the pattern later.
Referring to fig. 2, in an embodiment, the method for calibrating the wafer center at least includes the following steps:
s101, providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with patterns;
s102, introducing plasma gas into the cavity to form a film on the sucker, wherein the film covers the electrostatic sucker;
s103, bonding the film through a first wafer to obtain the pattern, wherein the pattern is transferred on the film;
s104, conveying the first wafer into or out of the cavity through a transmission device;
s105, optically scanning the pattern on the film to display the distribution condition of the pattern;
s106, determining the offset between the center of the pattern and the center of the first wafer according to the distribution condition;
and S107, adjusting the position of the second wafer according to the offset to enable the center of the sucker to be coincided with the center of the second wafer.
Specifically, in the step S101, as shown in fig. 3 to fig. 6, the cavity is, for example, a reaction cavity on an etching machine, the cavity 101 is located in the etching machine, and when an etching process and a film deposition process are performed, a wafer is conveyed into the cavity 101 by the conveying device. The number of the cavities 101 is, for example, plural. The electrostatic chuck 102 has a pattern, the center of the pattern coincides with the center of the electrostatic chuck, and the pattern is annularly distributed on the electrostatic chuck 102. The electrostatic chuck 102 is supported by, for example, three lift legs. The electrostatic chuck 102 has three holes, which are arranged in a triangle and respectively designated as a first hole 1021, a second hole 1022 and a third hole 1023. The three lifting columns are for example respectively designated as first lifting column 1031, second lifting column 1032 and third lifting column 1033. The three lifting support posts are respectively connected with the three holes, specifically, the first lifting support post 1031 is connected with the first hole 1021, the second lifting support post 1032 is connected with the second hole 1022, and the third lifting support post 1033 is connected with the third hole 1023. The electrostatic chuck 102 is used to hold a wafer (with the front side of the wafer facing upward and the back side in contact with the electrostatic chuck). The gas in the chamber 101 is pumped by a vacuum pump to increase the attraction force between the wafer and the electrostatic chuck 102, so that the electrostatic chuck 102 and the wafer can be firmly attracted together, and all patterns on the electrostatic chuck 102 can be transferred onto the wafer. The vacuum pump is connected with the etching machine, specifically, connected with the cavity 101.
Specifically, in step S102, a plasma gas is introduced into the cavity 101, and the plasma gas is dissociated into an ion state and a molecular state, which are accumulated on the electrostatic chuck 102 and polymerized into the thin film 105, wherein the dissociation is performed by, for example, Radio Frequency (RF) energy, Direct Current (DC) energy, laser irradiation, and microwave energy. The plasma is not used for etching but used for forming the film, and the invention skillfully converts the plasma gas which is originally needed to be used into the film forming effect, thereby ensuring that the correction method can be effectively carried out. The plasma gas not only cleans the cavity, but also accumulates on the electrostatic chuck 102 and polymerizes to form the film 105. The area covered by the thin film 105 is larger than the area of the pattern, the thin film 105 covers the pattern, and the thin film 105 has good compactness. In the process of forming the thin film 105, the temperature in the cavity 101 is, for example, 95 to 105 ℃. The thickness of the thin film 105 is, for example, 50 to 200 nm, specifically, 50 nm, 100 nm, 150 nm, 200 nm, or other thicknesses suitable for the present invention. The film 105 is capable of printing all patterns on the electrostatic chuck 102, including the shape of the electrostatic chuck 102, the various particle shapes on the electrostatic chuck 102, and other shapes that can be printed on the electrostatic chuck 102. Wherein the plasma gas at least comprises a first gas and a second gas, and the molar ratio of the first gas to the second gas is (0.5-5): 1. the first gas is, for example, octafluorocyclobutane and the second gas is, for example, hexafluorobutadiene. In another embodiment, the first gas is, for example, silicon tetrachloride, the second gas is, for example, oxygen, and in addition, the first gas further comprises a carrier gas, for example, helium, in this embodiment, for an etching machine, any region that can contact the silicon tetrachloride gas cannot contain aluminum, and of course, a pipe for introducing the silicon tetrachloride gas cannot contain aluminum.
Specifically, in step S103, as shown in fig. 7 to 9, the first wafer 104 has, for example, the same structure as the wafer in step S3, the first wafer 104 includes a wafer body 1041 and a silicon oxide layer 1042, the surface of the silicon oxide layer 1042 is flat, that is, a flat surface, and the thin film 105 is bonded to the silicon oxide layer 1042. The flatness of the surface of the silicon oxide layer 1042 further facilitates displaying the overall patterned shape of the electrostatic chuck 102, the first wafer 104 acting as the wafer in step S3. Under the vacuum condition, the attraction force between the film 105 and the electrostatic chuck 102 is increased, so that the film 105 and the electrostatic chuck 102 are tightly attracted together, all patterns on the electrostatic chuck 102 are transferred to the film 105, the film 105 is equivalent to a printing medium, all patterns on the electrostatic chuck 102 are transferred to the first wafer 104 through the film 105, and here, it should be noted that the film 105 is adhered to the first wafer 104, so that the patterns on the electrostatic chuck 102 are transferred to the first wafer 104. In addition, the silicon oxide layer 1042 needs to be in contact with the electrostatic chuck 102 during the step of placing the first wafer 104 on the film 105, which is more beneficial for displaying the pattern at a later stage.
Specifically, in step S104 and step S105, the conveying apparatus includes, for example, a boat for holding the first wafer 104, a mechanical cantilever 201, and a conveying channel. The mechanical cantilever 201 is connected with the etching machine, the mechanical cantilever 201 horizontally extends into the cavity 101 to send the first wafer 104 in or out, and then the first wafer 104 is sent to the optical detection platform for optical scanning through the transmission channel to display the distribution of the patterns. The mechanical cantilever 201 can rotate 360 degrees and also can stretch out and draw back, so that the mechanical cantilever can extend into the cavity 101 to grab the first wafer 104 or the second wafer.
Specifically, in step S106, according to the distribution, an offset between the center of the pattern and the center of the first wafer is determined, specifically, according to the center of the pattern and the center of the first wafer 104, an offset between the center of the pattern and the center of the first wafer 104 is determined, coordinates of the center of the pattern are marked, and coordinates of the center of the first wafer 104 are marked, and then the offset is calculated according to coordinate information of the two centers. For example, the center of the first wafer 104 is used as the origin of coordinates, the coordinate positions of the first hole 1021, the second hole 1022 and the third hole 1023 are marked, the position of the center coordinate of the pattern is determined according to the coordinate positions of the three holes, and then the position of the center coordinate of the pattern is compared with the coordinate position of the first wafer 104, so as to obtain the offset between the center of the pattern and the center of the first wafer 104. As shown in fig. 4, the four dashed circles in the figure represent, for example, the patterns on four different electrostatic chucks in four experiments.
Specifically, in step S107, after the offset is obtained, the offset information is input into the etching machine 101, and the etching machine adjusts the position of the mechanical cantilever 201 according to the offset information, so that the center of the pattern coincides with the center of the second wafer, and thus, the subsequent wafer center entering the cavity 101 can be adjusted conveniently. Here, the second wafer refers to a wafer containing integrated circuits, which is not specific to a certain wafer, but refers to a wafer containing integrated circuits that enters the cavity 101 after the first wafer 104. The correction method can avoid the problem that the center of the wafer can be corrected only by breaking vacuum, and meanwhile, the production line of the etching machine table does not need to be restored, and the production process flow and the production time are greatly reduced. Specifically, in the calibration method of the present invention, the thin film 105 is formed in a vacuum state, for example, in a vacuum state. The first wafer 104 is exposed to the thin film 105 under vacuum. Here, it should be noted that the inside of the chamber 101 is already in a vacuum state before the calibration method of the present invention is started.
Referring to fig. 1 to 7, in an embodiment of the present invention, in a vacuum state and without a wafer in the chamber 101, a silicon tetrachloride, oxygen, helium plasma gas is introduced to perform, for example, Radio Frequency (RF) energy, Direct Current (DC) energy, laser irradiation, and microwave energy treatment on the plasma gas, and the plasma gas is disposed in the chamberThe film 105 is formed on the surface of the electric sucker 102, and the molar ratio of the silicon tetrachloride to the oxygen is (0.5-5): specifically, the number of 1 is, for example, (0.5: 1), (0.8: 1), (1: 1), (2: 1), (3: 1), (4: 1) or (5: 1). The density of the plasma gas is, for example, 5000g/cm-3To 9X 1012g/ cm-3. Providing the first wafer 104, inverting the first wafer 104, transferring the first wafer into the cavity 101 through a transmission device, performing adsorption/desorption, transferring the pattern on the electrostatic chuck 102 onto the first wafer 104, leaving the cavity 101, turning over the first wafer 104, performing optical scanning on an optical detection platform to display the pattern distribution on the first wafer 104, so as to see the offset between the electrostatic chuck 102 and the center of the first wafer 104, and then adjusting the position of the second wafer by adjusting the position of the mechanical cantilever 201 to correct the center of the wafer, so that the center of the pattern coincides with the center of the second wafer. In this embodiment, for the etching machine, any area that can contact the silicon tetrachloride gas cannot contain aluminum, and certainly, the pipe for introducing the silicon tetrachloride gas cannot contain aluminum.
Referring to fig. 1 to 7, in another embodiment of the present invention, plasma gas of octafluorocyclobutane and hexafluorobutadiene with high carbon-to-fluorine ratio is introduced under vacuum condition and no wafer is in the chamber 101, and the plasma gas is subjected to Radio Frequency (RF) energy, Direct Current (DC) energy, laser irradiation and microwave energy treatment, for example, to form the film 105 on the surface of the electrostatic chuck 102, wherein the molar ratio between the silicon tetrachloride and the oxygen is (0.5-5): specifically, the number of 1 is, for example, (0.5: 1), (0.8: 1), (1: 1), (2: 1), (3: 1), (4: 1) or (5: 1). The density of the plasma gas is, for example, 5000g/cm-3To 9X 1012g/ cm-3. The first wafer 104 is then provided, inverted and transferred to the chamber by a transfer apparatusIn the body 101, performing adsorption/desorption, transferring the pattern on the electrostatic chuck 102 to the first wafer 104, then leaving the cavity 101, turning over the first wafer 104, performing optical scanning on an optical detection platform to display the pattern distribution on the first wafer 104, and then adjusting the position of the second wafer by adjusting the position of the mechanical cantilever 201 to correct the center of the wafer, so that the center of the pattern coincides with the center of the second wafer.
In summary, the present invention provides a method for obtaining an electrostatic chuck pattern and a method for calibrating a wafer center, which can utilize the plasma gas of the present invention, forming a thin film with good compactness on the electrostatic chuck, thereby transferring the pattern on the electrostatic chuck through the first wafer, then the optical detection platform is used for optical scanning to ensure that the pattern shows the distribution condition, then measuring the offset between the center of the pattern and the center of the first wafer, adjusting the position of the second wafer through the offset to make the center of the transferred pattern coincide with the center of the first wafer, thus being capable of accurately correcting the center of the wafer, therefore, the center of the wafer can be corrected without breaking vacuum, the production line of the etching machine is not required to be restored, and the production process flow and the production time are greatly reduced.
The above description is only a preferred embodiment of the present application and a description of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present invention related to the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above features with (but not limited to) technical features having similar functions disclosed in the present application.
Other technical features than those described in the specification are known to those skilled in the art, and are not described herein in detail in order to highlight the innovative features of the present invention.
Claims (10)
1. A method of obtaining an electrostatic chuck pattern, comprising:
providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with a pattern;
introducing plasma gas into the cavity to form a film on the electrostatic chuck, wherein the film covers the electrostatic chuck;
bonding the film through a wafer to obtain the pattern, wherein the pattern is transferred on the film;
the plasma gas at least comprises a first gas and a second gas, and the molar ratio of the first gas to the second gas is (0.5-5): 1.
2. the method of claim 1, wherein the first gas is octafluorocyclobutane and the second gas is hexafluorobutadiene.
3. The method of claim 1, wherein the first gas is silicon tetrachloride and the second gas is oxygen.
4. The method of claim 1, wherein the plasma gas has a density of 5000g/cm-3To 9X 1012g/ cm-3 。
5. The method of claim 1, wherein a center of the pattern coincides with a center of the electrostatic chuck, and the pattern is distributed annularly on the electrostatic chuck.
6. The method of claim 1, wherein the area of the thin film covers an area greater than an area of the pattern.
7. The method according to claim 1, wherein the temperature required for forming the thin film is 30 to 100 ℃.
8. The method of claim 1, wherein a planar surface of the wafer is brought into contact with the electrostatic chuck during the bonding of the film by the wafer.
9. A method for correcting the center of a wafer is characterized by at least comprising the following steps:
providing an electrostatic chuck, wherein the electrostatic chuck is positioned in a cavity and is provided with a pattern;
introducing plasma gas into the cavity to form a film on the chuck, wherein the film covers the electrostatic chuck;
bonding the film through a first wafer to obtain the pattern, wherein the pattern is transferred on the film;
the first wafer is conveyed into or out of the cavity through a conveying device;
optically scanning the pattern on the film to display the distribution of the pattern;
determining the offset between the center of the pattern and the center of the first wafer according to the distribution condition;
adjusting the position of a second wafer according to the offset to enable the center of the sucker to coincide with the center of the second wafer;
the plasma gas at least comprises a first gas and a second gas, and the molar ratio of the first gas to the second gas is (0.5-5): 1.
10. the calibration method of claim 9, wherein the first wafer comprises a wafer body and a silicon oxide layer, and the second wafer is a wafer with integrated circuits.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090054737A (en) * | 2007-11-27 | 2009-06-01 | 주식회사 동부하이텍 | Wafer alignment apparatus |
| US20100150695A1 (en) * | 2008-12-12 | 2010-06-17 | Lam Research Corporation | Method and System for Centering Wafer on Chuck |
| US20140301010A1 (en) * | 2011-09-28 | 2014-10-09 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
| KR20190092762A (en) * | 2018-01-31 | 2019-08-08 | 연세대학교 산학협력단 | Method of forming thin film using plasma enhanced chemical vapor deposition and apparatus therefor |
| CN111933557A (en) * | 2020-10-19 | 2020-11-13 | 晶芯成(北京)科技有限公司 | Method and system for correcting center of wafer |
-
2020
- 2020-10-19 CN CN202011114402.6A patent/CN112366166B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090054737A (en) * | 2007-11-27 | 2009-06-01 | 주식회사 동부하이텍 | Wafer alignment apparatus |
| US20100150695A1 (en) * | 2008-12-12 | 2010-06-17 | Lam Research Corporation | Method and System for Centering Wafer on Chuck |
| US20140301010A1 (en) * | 2011-09-28 | 2014-10-09 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
| KR20190092762A (en) * | 2018-01-31 | 2019-08-08 | 연세대학교 산학협력단 | Method of forming thin film using plasma enhanced chemical vapor deposition and apparatus therefor |
| CN111933557A (en) * | 2020-10-19 | 2020-11-13 | 晶芯成(北京)科技有限公司 | Method and system for correcting center of wafer |
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