JP2023027400A - Bonding device, bonding system, bonding method, program and computer storage media - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inspect the condition of the substrate bonding process and to properly perform the bonding process.

SOLUTION: A bonding device for bonding an upper wafer WU and a lower wafer WL has an upper chuck 140 that draws a vacuum, and sucks and holds the upper wafer WU on its lower surface, a lower chuck 141 that is provided below the upper chuck 140 and draws a vacuum, and sucks and holds the lower wafer WL on its upper surface, a pushing member 190 that is provided on the upper chuck 140 and presses the center of the upper wafer WU, and a sensor 175 provided on the upper chuck 140 and detects the state of contact between the upper wafer WU and the lower wafer WL. The sensor 175 measures the flow rate or pressure of gas flowing through the suction pipe for drawing a vacuum to the upper wafer WU.

SELECTED DRAWING: Figure 6

COPYRIGHT: (C)2023,JPO&INPIT

Description

The present invention relates to a bonding apparatus for bonding substrates together, a bonding system including the bonding apparatus, a bonding method using the bonding apparatus, a program, and a computer storage medium.

In recent years, semiconductor devices have been highly integrated. When a plurality of highly integrated semiconductor devices are arranged in a horizontal plane and these semiconductor devices are connected by wiring to produce a product, the wiring length increases, resulting in an increase in wiring resistance and a large wiring delay. It is feared that

Therefore, it has been proposed to use a three-dimensional integration technology for three-dimensionally stacking semiconductor devices. In this three-dimensional integration technique, two semiconductor wafers (hereinafter referred to as "wafers") are bonded using, for example, the bonding system described in Patent Document 1. For example, the bonding system includes a surface modification device that modifies the surface to be bonded of the wafer, a surface hydrophilization device that hydrophilizes the surface of the wafer that has been modified by the surface modification device, and a surface hydrophilization device. and a bonding apparatus for bonding wafers having hydrophilic surfaces. In this bonding system, the surface of the wafer is subjected to plasma treatment in the surface modification device to modify the surface, and pure water is supplied to the surface of the wafer in the surface hydrophilization device to hydrophilize the surface. , the wafers are bonded together by van der Waals forces and hydrogen bonds (intermolecular forces) in a bonding apparatus.

The bonding apparatus includes an upper chuck that holds one wafer (hereinafter referred to as "upper wafer") on its lower surface, and an upper chuck that is provided below the upper chuck and holds another wafer (hereinafter referred to as "lower wafer") on its upper surface. and a pressing member provided on the upper chuck to press the center of the upper wafer. In such a bonding apparatus, the upper wafer held by the upper chuck and the lower wafer held by the lower chuck are arranged to face each other, and the pressing member presses the central portion of the upper wafer and the central portion of the lower wafer to bring them into contact with each other. Then, the center portions are joined together to form a joining region. After that, a so-called bonding wave is generated in which the bonding area expands from the center of the wafer toward the outer periphery. Then, the upper wafer and the lower wafer are bonded.

JP 2016-039364 A

In order to suppress the distortion of the superposed wafer after bonding, it is preferable that the bonding wave expands evenly, that is, concentrically, from the center of the wafer toward the outer periphery. However, the bonding apparatus described in Patent Document 1 described above does not monitor the bonding wave, so even if the bonding wave expands unevenly, it cannot be grasped. Therefore, conventional wafer bonding processes have room for improvement.

SUMMARY OF THE INVENTION It is an object of the present invention to inspect the state of bonding processing of substrates and perform the bonding processing appropriately.

In order to achieve the above object, the present invention provides a bonding apparatus for bonding substrates together, comprising: a first holding portion for sucking and holding a first substrate on its lower surface; a second holding portion that sucks and holds the second substrate on the upper surface; a pushing member that is provided in the first holding portion and presses the center portion of the first substrate; a substrate detection unit provided in the unit for detecting a state of contact between the first substrate and the second substrate; It is characterized by measuring the flow rate or pressure of

According to the present invention, the board detecting section can detect that the first board held by the first holding section is separated from the first holding section. When this separation of the first substrate occurs, the first substrate drops and contacts the second substrate, and the first substrate and the second substrate are bonded by intermolecular force. Therefore, by detecting the detachment of the first substrate, the bonding wave can be grasped, and the state of the wafer bonding process can be inspected. Then, for example, when the bonding wave is uniform (when the state of the bonding process is normal), the bonding process may be continued under the same processing conditions. On the other hand, for example, when the bonding wave is uneven (when the state of the bonding process is abnormal), the bonding process may be performed after correcting the processing conditions. Therefore, according to the present invention, the substrate bonding process can be performed appropriately.

In the bonding apparatus, the substrate detection unit measures a change in airflow in the suction pipe when the first substrate is separated from the first holding unit, and detects the difference between the first substrate and the second substrate. may be detected. Further, the first holding unit may have a suction unit that vacuums and sucks the first substrate, and the substrate detection unit may be provided in a suction pipe connected to the suction unit. .

In the bonding apparatus, a plurality of substrate detection units may be provided on a circle concentric with the first holding unit. Further, the substrate detection section may be provided on a plurality of circumferences.

In the bonding apparatus, the substrate detector may be arranged based on the anisotropy of Young's modulus or Poisson's ratio of the first substrate.

According to another aspect of the present invention, there is provided a bonding system including the bonding apparatus, a processing station including the bonding apparatus, the first substrate, the second substrate, or the first substrate and the second substrate. a loading/unloading station holding a plurality of superimposed substrates each having two substrates bonded thereto, and loading/unloading the first substrate, the second substrate, or the superimposed substrate with respect to the processing station; The processing station comprises a surface modification device for modifying the surfaces to be bonded of the first substrate or the second substrate, and a surface of the first substrate or the second substrate modified by the surface modification device. The first substrate, the second substrate, or the polymerized substrate is conveyed to a surface hydrophilization device for hydrophilizing the surface of the substrate, the surface modification device, the surface hydrophilization device, and the bonding device. and a conveying device for bonding, wherein the bonding device bonds the first substrate and the second substrate, the surfaces of which are hydrophilized by the surface hydrophilization device.

According to another aspect of the present invention, there is provided a bonding method for bonding substrates, in which a first substrate held on the lower surface of a first holding portion and a second substrate held on the upper surface of a second holding portion are bonded together. an arrangement step of arranging the substrate so as to face the substrate; thereafter, a pressing member provided in the first holding portion and pressing the center portion of the first substrate is lowered, and the pressing member moves the first substrate; and a pressing step of pressing and contacting the central portion of the second substrate with the central portion of the first substrate and the central portion of the second substrate being in contact with each other. a bonding step of sequentially bonding the first substrate and the second substrate from the center of the first substrate toward the outer periphery thereof; detecting the state of contact between the first substrate and the second substrate by a substrate detection unit that measures the flow rate or pressure of gas flowing through a suction pipe for vacuuming the first substrate. Characterized by

In the bonding step, the substrate detection unit measures a change in airflow in the suction pipe when the first substrate is separated from the first holding unit, and the first substrate and the second substrate are measured. may be detected. Further, in the bonding method, the first holding unit has a suction unit that vacuums and sucks the first substrate, and the substrate detection unit is provided in a suction pipe connected to the suction unit. may have been

In the bonding method, a plurality of the substrate detection portions may be provided on a circumference concentric with the first holding portion. Further, the substrate detection section may be provided on a plurality of circumferences.

In the bonding method, the substrate detector may be arranged based on the anisotropy of Young's modulus or Poisson's ratio of the first substrate.

According to another aspect of the present invention, there is provided a program that runs on a computer of a control unit that controls a welding apparatus so as to cause the welding apparatus to execute the welding method.

According to still another aspect of the present invention, there is provided a readable computer storage medium storing the program.

ADVANTAGE OF THE INVENTION According to this invention, the state of the bonding process of a board|substrate can be inspected and the said bonding process can be performed appropriately.

1 is a plan view showing an outline of a configuration of a joining system according to an embodiment; FIG. It is a side view showing an outline of an internal configuration of a joining system concerning this embodiment. It is a side view which shows the outline of a structure of an upper wafer and a lower wafer. It is a cross-sectional view showing the outline of the structure of a joining apparatus. It is a longitudinal section showing an outline of composition of a joining device. FIG. 3 is a vertical cross-sectional view showing the outline of the configuration of the upper chuck, the upper chuck holding portion, and the lower chuck; It is the top view which looked at the upper chuck from the downward direction. It is explanatory drawing which shows the mode of expansion of the junction area|region between wafers in the past. It is a graph which shows an example of the output result of a sensor. 4 is a flow chart showing main steps of wafer bonding processing. It is explanatory drawing which shows a mode that the upper wafer and the lower wafer were arrange|positioned facing each other. It is explanatory drawing which shows a mode that the center part of an upper wafer and the center part of a lower wafer are pressed and contact|abutted. It is explanatory drawing which shows a mode that the junction of an upper wafer and a lower wafer spread|diffuses from a center part to an outer peripheral part. It is explanatory drawing which shows a mode that the surface of an upper wafer and the surface of a lower wafer were made to contact|abut. It is explanatory drawing which shows a mode that the upper wafer and the lower wafer were joined. FIG. 11 is a plan view of an upper chuck showing the arrangement of sensors according to another embodiment; FIG. 11 is a plan view of an upper chuck showing the arrangement of sensors according to another embodiment; FIG. 11 is a vertical cross-sectional view schematically showing the configuration of an upper chuck, an upper chuck holding portion, and a lower chuck according to another embodiment;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this invention is not limited by the embodiment shown below.

<1. Configuration of Joining System>
First, the configuration of the joining system according to this embodiment will be described. FIG. 1 is a plan view showing an outline of the configuration of a joining system 1. FIG. FIG. 2 is a side view showing an outline of the internal configuration of the joining system 1. FIG.

In the bonding system 1, as shown in FIG. 3, wafers WU and WL as two substrates, for example, are bonded. Hereinafter, the wafer placed on the upper side will be referred to as the "upper wafer WU" as the first substrate, and the wafer placed on the lower side will be referred to as the "lower wafer WL" as the second substrate. Further, the bonding surface to which the upper wafer WU is bonded is referred to as "front surface WU1", and the surface opposite to the front surface WU1 is referred to as "back surface WU2". Similarly, the bonding surface to which the lower wafer WL is bonded is called "front surface WL1", and the surface opposite to the front surface WL1 is called "back surface WL2". Then, in the bonding system 1, the upper wafer WU and the lower wafer WL are bonded to form a superposed wafer WT as a superposed substrate.

As shown in FIG. 1, the bonding system 1 includes, for example, a loading/unloading station 2 for loading/unloading cassettes CU, CL, and CT each capable of accommodating a plurality of wafers WU, WL, and a plurality of superimposed wafers WT to/from the outside, It has a configuration in which a processing station 3 equipped with various processing devices for performing predetermined processing on wafers WU, WL, and superimposed wafer WT is integrally connected.

The loading/unloading station 2 is provided with a cassette mounting table 10 . A plurality of, for example, four cassette mounting plates 11 are provided on the cassette mounting table 10 . The cassette mounting plates 11 are arranged in a row in the horizontal X direction (vertical direction in FIG. 1). The cassettes CU, CL, and CT can be placed on these cassette placing plates 11 when the cassettes CU, CL, and CT are carried into and out of the joining system 1 . In this way, the loading/unloading station 2 is configured to be capable of holding a plurality of upper wafers WU, a plurality of lower wafers WL, and a plurality of superimposed wafers WT. The number of cassette mounting plates 11 is not limited to that of the present embodiment, and can be set arbitrarily. Also, one of the cassettes may be used for collecting abnormal wafers. In other words, the cassette is capable of separating wafers in which an abnormality has occurred in bonding between the upper wafer WU and the lower wafer WL due to various factors from other normal overlapped wafers WT. In this embodiment, one cassette CT among a plurality of cassettes CT is used for recovering abnormal wafers, and the other cassette CT is used for containing normal superposed wafers WT.

The loading/unloading station 2 is provided with a wafer transfer section 20 adjacent to the cassette mounting table 10 . The wafer transfer section 20 is provided with a wafer transfer device 22 which is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is movable in the vertical direction and around the vertical axis (the direction of θ), and is capable of moving the cassettes CU, CL, and CT on the respective cassette mounting plates 11 and a third processing block of the processing station 3, which will be described later. Wafers WU, WL and superposed wafer WT can be transferred between the transition devices 50, 51 of G3.

The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2 and G3 having various devices. For example, a first processing block G1 is provided on the front side of the processing station 3 (negative direction in the X direction in FIG. 1), and a first processing block G1 is provided on the back side of the processing station 3 (positive direction in the X direction in FIG. 1). 2 processing blocks G2 are provided. A third processing block G3 is provided on the loading/unloading station 2 side of the processing station 3 (the Y direction negative direction side in FIG. 1).

For example, the first processing block G1 is provided with a surface modification apparatus 30 that modifies the surfaces WU1 and WL1 of the wafers WU and WL. In the surface modification apparatus 30, for example, in a reduced-pressure atmosphere, oxygen gas or nitrogen gas, which is the processing gas, is excited into plasma and ionized. The surfaces WU1 and WL1 are irradiated with the oxygen ions or nitrogen ions to plasma-process and modify the surfaces WU1 and WL1.

For example, the second processing block G2 includes a surface hydrophilization device 40 for hydrophilizing the surfaces WU1 and WL1 of the wafers WU and WL with pure water and cleaning the surfaces WU1 and WL1; The devices 41 are arranged side by side in the horizontal Y direction in this order from the loading/unloading station 2 side. The configuration of the joining device 41 will be described later.

The surface hydrophilization device 40 supplies pure water onto the wafers WU and WL while rotating the wafers WU and WL held by spin chucks, for example. Then, the supplied pure water diffuses on the surfaces WU1 and WL1 of the wafers WU and WL, and the surfaces WU1 and WL1 are made hydrophilic.

For example, in the third processing block G3, as shown in FIG. 2, transition devices 50 and 51 for wafers WU and WL and superimposed wafer WT are provided in two stages from the bottom.

As shown in FIG. 1, a wafer transfer area 60 is formed in an area surrounded by the first to third processing blocks G1 to G3. For example, a wafer transfer device 61 is arranged in the wafer transfer area 60 .

The wafer transfer device 61 has a transfer arm that is movable, for example, in vertical directions, horizontal directions (Y direction and X direction), and around vertical axes. The wafer transfer device 61 moves within the wafer transfer area 60, and transfers the wafers WU, WL, and superimposed wafers to predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. WT can be transported.

The joining system 1 described above is provided with a control unit 70 as shown in FIG. The control unit 70 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores programs for controlling the processing of the wafers WU, WL, and the superposed wafer WT in the bonding system 1 . Also stored in the program storage unit is a program for controlling the operation of drive systems such as the various processing devices and transfer devices described above to realize wafer bonding processing, which will be described later, in the bonding system 1 . The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical disk (MO), memory card, etc. It may have been installed in the control unit 70 from the storage medium H.

<2. Configuration of Bonding Apparatus>
Next, the structure of the joining apparatus 41 mentioned above is demonstrated.

<2-1. Overall Configuration of Bonding Apparatus>
The bonding apparatus 41 has a processing container 100 whose inside can be sealed, as shown in FIGS. A loading/unloading port 101 for the wafers WU, WL, and the superimposed wafer WT is formed on the side surface of the processing container 100 on the wafer transfer area 60 side, and an opening/closing shutter 102 is provided at the loading/unloading port 101 .

The interior of the processing container 100 is partitioned into a transfer area T1 and a processing area T2 by an inner wall 103 . The loading/unloading port 101 described above is formed on the side surface of the processing container 100 in the transport area T1. Also, the inner wall 103 is formed with a loading/unloading port 104 for the wafers WU, WL, and the superposed wafer WT.

A transition 110 for temporarily placing the wafers WU and WL and the overlapped wafer WT is provided on the positive side of the transfer area T1 in the Y direction. The transition 110 is formed, for example, in two stages, and any two of the wafers WU, WL, and the overlapped wafer WT can be placed at the same time.

A wafer transfer mechanism 111 is provided in the transfer area T1. The wafer transfer mechanism 111 has, for example, a transfer arm that can move vertically, horizontally (X direction, Y direction), and around a vertical axis. The wafer transfer mechanism 111 can transfer the wafers WU, WL, and the overlapped wafer WT within the transfer region T1 or between the transfer region T1 and the processing region T2.

A position adjusting mechanism 120 that adjusts the horizontal direction of the wafers WU and WL is provided on the transfer area T1 on the negative side in the Y direction. The position adjustment mechanism 120 has a base 121 having a holding portion (not shown) that holds and rotates the wafers WU and WL, and a detection portion 122 that detects the positions of the notch portions of the wafers WU and WL. are doing. In the position adjusting mechanism 120, the positions of the notch portions of the wafers WU and WL are detected by the detecting portion 122 while rotating the wafers WU and WL held on the base 121, thereby adjusting the positions of the notch portions. to adjust the horizontal orientation of the wafers WU and WL. The structure for holding the wafers WU and WL on the base 121 is not particularly limited, and various structures such as a pin chuck structure and a spin chuck structure are used.

A reversing mechanism 130 for reversing the front and rear surfaces of the upper wafer WU is provided in the transfer region T1. The reversing mechanism 130 has a holding arm 131 that holds the upper wafer WU. The holding arm 131 extends in the horizontal direction (X direction). The holding arm 131 is provided with holding members 132 for holding the upper wafer WU, for example, at four locations.

The holding arm 131 is supported by a drive section 133 including, for example, a motor. The drive portion 133 allows the holding arm 131 to rotate about the horizontal axis. The holding arm 131 is rotatable around the driving portion 133 and is also movable in the horizontal direction (X direction). Below the drive unit 133, another drive unit (not shown) including, for example, a motor is provided. This other drive allows the drive 133 to move vertically along a vertically extending support post 134 . Thus, the upper wafer WU held by the holding member 132 can be rotated around the horizontal axis and moved vertically and horizontally by the drive unit 133 . Further, the upper wafer WU held by the holding member 132 can rotate around the driving portion 133 and move between the position adjusting mechanism 120 and the upper chuck 140 which will be described later.

In the processing area T2, an upper chuck 140 as a first holding unit that sucks and holds the upper wafer WU on its lower surface, and a lower chuck 141 that serves as a second holding unit that places and holds the lower wafer WL on its upper surface by suction. and are provided. The lower chuck 141 is provided below the upper chuck 140 and is configured to be arranged facing the upper chuck 140 . That is, the upper wafer WU held by the upper chuck 140 and the lower wafer WL held by the lower chuck 141 can be placed facing each other.

The upper chuck 140 is held by an upper chuck holder 150 provided above the upper chuck 140 . The upper chuck holding part 150 is provided on the ceiling surface of the processing container 100 . That is, the upper chuck 140 is fixed to the processing container 100 via the upper chuck holding portion 150 .

The upper chuck holding unit 150 is provided with an upper imaging unit 151 that takes an image of the surface WL1 of the lower wafer WL held by the lower chuck 141 . That is, the upper imaging section 151 is provided adjacent to the upper chuck 140 . A CCD camera, for example, is used for the upper imaging unit 151 .

The lower chuck 141 is supported by a lower chuck stage 160 provided below the lower chuck 141 . The lower chuck stage 160 is provided with a lower imaging section 161 for imaging the surface WU1 of the upper wafer WU held by the upper chuck 140 . That is, the lower imaging section 161 is provided adjacent to the lower chuck 141 . A CCD camera, for example, is used for the lower imaging unit 161 .

The lower chuck stage 160 is supported by a first lower chuck moving part 162 provided below the lower chuck stage 160 , and the first lower chuck moving part 162 is further supported by a support table 163 . The first lower chuck moving part 162 is configured to move the lower chuck 141 in the horizontal direction (X direction) as will be described later. The first lower chuck moving part 162 is configured to move the lower chuck 141 in the vertical direction and to rotate about the vertical axis.

The support base 163 is provided on the lower surface side of the support base 163 and attached to a pair of rails 164, 164 extending in the horizontal direction (X direction). The support base 163 is configured to be movable along the rail 164 by the first lower chuck moving portion 162 . The first lower chuck moving part 162 is moved by a linear motor (not shown) provided along the rail 164, for example.

A pair of rails 164 , 164 are arranged on the second lower chuck moving portion 165 . The second lower chuck moving part 165 is provided on the lower surface side of the second lower chuck moving part 165 and attached to a pair of rails 166, 166 extending in the horizontal direction (Y direction). The second lower chuck moving part 165 is configured to be movable along the rail 166, that is, to move the lower chuck 141 in the horizontal direction (Y direction). The second lower chuck moving part 165 is moved by a linear motor (not shown) provided along the rail 166, for example. A pair of rails 166 , 166 are arranged on a mounting table 167 provided on the bottom surface of the processing container 100 .

<2-2. Configuration of Upper Chuck>
Next, a detailed configuration of the upper chuck 140 of the bonding device 41 will be described.

As shown in FIGS. 6 and 7, the upper chuck 140 employs a pin chuck system. The upper chuck 140 has a body portion 170 having a diameter equal to or larger than the diameter of the upper wafer WU in plan view. A plurality of pins 171 are provided on the lower surface of main body 170 to contact back surface WU2 of upper wafer WU. 7, illustration of the pin 171 is omitted.

Further, a plurality of suction portions 172 to 174 are provided on the lower surface of the main body portion 170 for vacuuming and sucking the upper wafer WU. Suction portions 172 to 174 each have the same height as pins 171 and come into contact with rear surface WU2 of upper wafer WU.

The first suction portion 172 has an arc shape in plan view. A plurality of, for example eight, first suction portions 172 are arranged in the circumferential direction at predetermined intervals on a circumference concentric with the main body portion 170 on the outer peripheral portion of the main body portion 170 .

A first vacuum pump 172b is connected to each of these eight first suction units 172 via a first suction pipe 172a. Evacuating by the first vacuum pump 172b allows the eight first suction units 172 to individually suck the upper wafer WU.

Like the first suction portion 172, the second suction portion 173 has an arc shape in plan view. A plurality of, for example, eight second suction portions 173 are arranged on a circle concentric with the main body portion 170 on the inner peripheral side of the main body portion 170 relative to the first suction portion 172, and are arranged at predetermined intervals in the circumferential direction. are placed. Note that the central portion of the first suction portion 172 and the central portion of the second suction portion 173 are arranged on the center line of the main body portion 170 .

A second vacuum pump 173b is connected to each of these eight second suction units 173 via a second suction pipe 173a. Evacuation by the second vacuum pump 173b allows the eight second suction units 173 to individually suck the upper wafer WU.

The third suction portion 174 has an annular shape in plan view. The third suction portion 174 is arranged on the inner peripheral side of the main body portion 170 relative to the second suction portion 173 and concentrically with the main body portion 170 . A third vacuum pump 174b is connected to the third suction portion 174 via a third suction pipe 174a. The vacuuming by the third vacuum pump 174b allows the third suction unit 174 to suck the upper wafer WU.

The body portion 170 is provided with a sensor 175 as a substrate detection portion that detects separation of the upper wafer WU from the body portion 170 . A plurality of, for example, eight sensors 175 are arranged in the circumferential direction at predetermined intervals on a circle concentric with the body portion 170 between the first suction portion 172 and the second suction portion 173 . That is, the sensor 175 , the center portion of the first suction portion 172 and the center portion of the second suction portion 173 are arranged on the same center line of the body portion 170 . Details such as the type and arrangement of these sensors 175 will be described later.

A through hole 176 is formed in the central portion of the body portion 170 so as to penetrate the body portion 170 in the thickness direction. The central portion of the body portion 170 corresponds to the central portion of the upper wafer WU held by the upper chuck 140 by suction. A distal end portion of an actuator portion 191 of a pushing member 190 to be described later is inserted through the through hole 176 .

<2-3. Details of upper chuck sensor>
Next, details of the sensor 175 described above and a method of controlling the suction units 172 to 174 using the inspection results of the sensor 175 will be described.

When bonding the upper wafer WU and the lower wafer WL as will be described later, first, the central portion of the upper wafer WU is pushed down to contact the central portion of the lower wafer WL, thereby separating the central portion of the upper wafer WU and the lower wafer WL. A bonding region is formed in the central portions of both wafers by bonding the central portions to each other by intermolecular force. After that, a bonding wave is generated in which the bonding area expands from the center to the outer periphery of both wafers WU and WL, and the surfaces WU1 and WL1 of the upper wafer WU and the lower wafer WL are bonded over the entire surface.

A sensor 175 is provided on the main body 170 to detect this bonding wave.

Various sensors can be used for the sensor 175 . For example, sensor 175 may be a reflective fiber sensor. In such a case, light is emitted from the sensor 175 toward the upper wafer WU, and the reflected light is received by the sensor 175 to measure the amount of received light. By measuring the received amount of this reflected light, the orthogonality between the optical axis and the upper wafer WU can be grasped. That is, when the amount of reflected light is small, the orthogonality between the optical axis and the upper wafer WU is large (the inclination of the upper wafer WU is large), and although the upper wafer WU is separated from the upper chuck 140, it is in contact with the lower wafer WL. means that it is not On the other hand, when the amount of reflected light is large, the orthogonality between the optical axis and the upper wafer WU is small (the inclination of the upper wafer WU is small), and the upper wafer WU is separated from the upper chuck 140 and is in contact with the lower wafer WL. means Therefore, by measuring the amount of reflected light with the sensor 175, it is possible to detect the state of contact between the upper wafer WU and the lower wafer WL at the sensor 175 (in other words, the separation state of the upper wafer WU from the upper chuck 140). You can grasp the bonding wave.

Further, for example, the sensor 175 may be a capacitance sensor or a distance measuring sensor. When a capacitance sensor is used, the distance between upper chuck 140 and upper wafer WU can be measured by measuring the capacitance with upper wafer WU. When a distance measuring sensor is used, laser light is emitted from the sensor 175 to the upper wafer WU, and the reflected light is received by the sensor 175, whereby the distance between the upper chuck 140 and the upper wafer WU can be measured. . By measuring the distance between upper chuck 140 and upper wafer WU in this way, the state of contact between upper wafer WU and lower wafer WL at sensor 175 (in other words, the state of separation of upper wafer WU from upper chuck 140) can be determined. ) can be detected and the bonding wave can be grasped.

Also, for example, the sensor 175 may be a fluid sensor. In this case, a suction pad (not shown) is provided on the main body 170, that is, a suction pad is provided at the position of reference numeral 175 shown in FIGS. 6 and 7, and the sensor 175 is connected to this suction pad. provided in a suction tube (not shown). The suction pad is not intended to suck and hold the upper wafer WU, but evacuates the upper wafer WU with a very small pressure, eg, about -10 kPa, which does not affect the bonding wave. A sensor 175 then measures the flow rate or pressure of the gas flowing through each suction tube. For example, when the upper wafer WU is detached from the upper chuck 140, the flow of gas in the suction pipe changes, and the flow rate and pressure of the gas change. The sensor 175 can measure changes in the airflow in this suction pipe and detect separation of the upper wafer WU from the upper chuck 140 (in other words, contact state between the upper wafer WU and the lower wafer WL). Wave can be grasped. The sensors 175 may be provided in the first suction tube 172a of the first suction section 172 and the second suction tube 173a of the second suction section 173, respectively.

As described above, the sensors 175 are arranged in the circumferential direction on a concentric circle with the body portion 170 between the first suction portion 172 and the second suction portion 173 at a predetermined interval. Next, the arrangement of this sensor 175 will be described.

The arrangement of the sensors 175 is determined according to physical properties of the upper wafer WU, such as anisotropy such as Young's modulus and Poisson's ratio. FIG. 8 is an explanatory diagram showing how the bonding area between wafers is enlarged in the conventional art. The inventors have found that, as shown in FIG. 8, when the bonding process is performed, the bonding region A expands non-uniformly rather than concentrically. 8 is a plan view of the upper wafer WU held by the upper chuck 140 as viewed from below.

The upper wafer WU is a single crystal silicon wafer whose crystal orientation in the direction perpendicular to the surface WU1 is [100]. The notch portion N of the upper wafer WU is formed at the outer edge of the upper wafer WU in the [011] crystal direction. The bonding region A is formed in a 90° cycle direction (0-11 direction shown in FIG. [ 010] Rapidly expands in directions of 45° cycles (directions of 45°, 135°, 225°, and 315° shown in FIG. 8, hereinafter sometimes referred to as 45° directions) with reference to the direction toward the crystal direction. . As a result, the shape of the joining area A, which was circular at the start of joining (at the time of joining at the central portion), becomes closer to a quadrangle having a vertex in the 45° direction as it expands.

In this embodiment, eight sensors 175 are provided on the circumference concentric with the body portion 170, that is, provided in the 90° direction and the 45° direction. Therefore, by detecting the detachment of the upper wafer WU from the upper chuck 140 using these sensors 175 and detecting the bonding area A shown in FIG. 8, the bonding wave can be grasped.

A detection result of the sensor 175 is output to the control unit 70 . The control unit 70 controls operations of the suction units 172 to 174 based on the detection result of the sensor 175 .

FIG. 9 is a graph showing an example of the output result of the sensor 175. As shown in FIG. The horizontal axis of FIG. 9 indicates the elapsed time of the bonding process, and the vertical axis indicates the output result of the sensor 175 , that is, the position of the upper wafer WU with respect to the upper chuck 140 . When the output result of the sensor 175 is P1 (the upper wafer WU is close to the upper chuck 140), the upper wafer WU is in contact with the upper chuck 140 at the position of the sensor 175, and the bonding area A has not reached. It is shown that. When the detection result of the sensor 175 is P2 (the upper wafer WU is far from the upper chuck 140), the upper wafer WU is separated from the upper chuck 140 at the position of the sensor 175 and is in contact with the lower wafer WL. It shows that A has arrived.

FIG. 9(a) shows the case where the joint region A is non-uniform, that is, expands into a substantially square shape as shown in FIG. As described above, the bonding area A expands faster in the 45° direction than in the 90° direction. Therefore, the time difference ΔT between the arrival timing of the bonding region A in the 45° direction and the arrival timing of the bonding region A in the 90° direction becomes large.

Therefore, the control unit 70 performs control so that the time difference ΔT falls within a predetermined threshold value as shown in FIG. Here, there is a correlation between the time difference ΔT and the distortion of the superposed wafer WT after bonding. The predetermined threshold value of ΔT is set from the allowable range of distortion of the superposed wafer WT.

Specifically, the control by the control unit 70 delays the timing at which the second suction unit 173 releases the upper wafer WU in the 45° direction, and advances the timing at which the second suction unit 173 releases the upper wafer WU in the 90° direction. do. As a result, at the positions of the eight sensors 175, the arrival timings of the bonding regions A can be made substantially the same. Therefore, the expansion of the bonding area A can be made uniform, and the bonding wave can be made uniform (a shape close to a concentric circle).

In this embodiment, the case where the adsorption timing of the second suction unit 173 is controlled based on the detection result of the sensor 175 has been described, but the adsorption force of the second suction unit 173 may be further controlled. . Also, based on the detection result of the sensor 175, the other suction units 172 and 174 may be controlled.

<2-4. Configuration of Upper Chuck Holding Portion>
Next, a detailed configuration of the upper chuck holder 150 of the joining device 41 will be described.

The upper chuck holding section 150 has an upper chuck stage 180 provided on the upper surface of the main body section 170 of the upper chuck 140 as shown in FIG. The upper chuck stage 180 is provided so as to cover at least the upper surface of the main body portion 170 in plan view, and is fixed to the main body portion 170 by screwing, for example. The upper chuck stage 180 is supported by a plurality of support members 181 provided on the ceiling surface of the processing container 100 .

A pressing member 190 that presses the central portion of the upper wafer WU is further provided on the upper surface of the upper chuck stage 180, as shown in FIG. The pushing member 190 has an actuator portion 191 and a cylinder portion 192 .

The actuator unit 191 generates a constant pressure in a constant direction by air supplied from an electro-pneumatic regulator (not shown), and can generate the constant pressure regardless of the position of the point of action of the pressure. . Then, the air from the electro-pneumatic regulator allows the actuator section 191 to come into contact with the central portion of the upper wafer WU to control the pressing load applied to the central portion of the upper wafer WU. Further, the tip of the actuator section 191 can be vertically moved up and down through the through hole 176 by air from the electro-pneumatic regulator.

The actuator section 191 is supported by the cylinder section 192 . The cylinder part 192 can move the actuator part 191 in the vertical direction by a drive part containing a motor, for example.

As described above, the pressing member 190 controls the pressing load with the actuator portion 191 and controls the movement of the actuator portion 191 with the cylinder portion 192 . Then, the pressing member 190 can press the central portion of the upper wafer WU and the central portion of the lower wafer WL in contact with each other when the wafers WU and WL are bonded, which will be described later.

<2-5. Configuration of Lower Chuck>
Next, a detailed configuration of the lower chuck 141 of the bonding device 41 will be described.

Similar to the upper chuck 140, the lower chuck 141 employs a pin chuck system as shown in FIG. The lower chuck 141 has a body portion 200 having a diameter equal to or larger than the diameter of the lower wafer WL in plan view. A plurality of pins 201 are provided on the upper surface of the main body 200 to contact the back surface WL2 of the lower wafer WL. Further, an outer rib 202 having the same height as the pin 201 and supporting the outer peripheral portion of the back surface WL2 of the lower wafer WL is provided on the outer peripheral portion of the upper surface of the main body portion 200 . The outer rib 202 is annularly provided on the outer side of the plurality of pins 201 .

Further, on the upper surface of the main body part 200, inside the outer ribs 202, inner ribs 203 are provided which have the same height as the pins 201 and support the back surface WL2 of the lower wafer WL. The inner rib 203 is annularly provided concentrically with the outer rib 202 . A region 204 inside the outer rib 202 (hereinafter sometimes referred to as a suction region 204) consists of a first suction region 204a inside the inner rib 203 and a second suction region 204b outside the inner rib 203. It is divided into

A first suction port 205a for vacuuming the lower wafer WL is formed in the first suction region 204a on the upper surface of the main body 200 . The first suction port 205a is formed, for example, at one location in the first suction region 204a. A first suction pipe 206a provided inside the main body 200 is connected to the first suction port 205a. Further, a first vacuum pump 207a is connected to the first suction pipe 206a.

A second suction port 205b for vacuuming the lower wafer WL is formed in the upper surface of the main body 200 in the second suction region 204b. The second suction ports 205b are formed, for example, at two locations in the second suction region 204b. A second suction pipe 206b provided inside the main body 200 is connected to the second suction port 205b. Furthermore, a second vacuum pump 207b is connected to the second suction pipe 206b.

Then, suction regions 204a and 204b formed by being surrounded by the lower wafer WL, main body 200 and outer ribs 202 are evacuated from suction ports 205a and 205b, respectively, to reduce the pressure in the suction regions 204a and 204b. At this time, since the atmosphere outside the suction areas 204a and 204b is atmospheric pressure, the lower wafer WL is pushed toward the suction areas 204a and 204b by the amount of pressure reduced, and the lower wafer WL is attracted to the lower chuck 141. retained. In addition, the lower chuck 141 is configured to be able to evacuate the lower wafer WL in each of the first suction area 204a and the second suction area 204b.

In the lower chuck 141 , for example, three through holes (not shown) are formed near the center of the main body 200 so as to penetrate the main body 200 in the thickness direction. A lifting pin provided below the first lower chuck moving portion 162 is inserted into the through hole.

A guide member (not shown) is provided on the outer periphery of the main body 200 to prevent the wafers WU, WL, and the superposed wafer WT from jumping out of the lower chuck 141 or sliding down. The guide members are provided at a plurality of locations, for example, four locations on the outer peripheral portion of the body portion 200 at equal intervals.

The operation of each section in the bonding device 41 is controlled by the control section 70 described above.

<3. Joining processing method>
Next, a method of bonding the wafers WU and WL using the bonding system 1 configured as described above will be described. FIG. 10 is a flowchart showing an example of main steps of such wafer bonding processing.

First, a cassette CU containing a plurality of upper wafers WU, a cassette CL containing a plurality of lower wafers WL, and an empty cassette CT are placed on a predetermined cassette mounting plate 11 of the loading/unloading station 2 . . After that, the upper wafer WU in the cassette CU is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3 .

Next, the upper wafer WU is transferred by the wafer transfer device 61 to the surface modification device 30 of the first processing block G1. In the surface modification apparatus 30, oxygen gas or nitrogen gas, which is the processing gas, is excited into plasma and ionized under a predetermined reduced pressure atmosphere. The surface WU1 of the upper wafer WU is irradiated with these oxygen ions or nitrogen ions, and the surface WU1 is plasma-processed. Then, the surface WU1 of the upper wafer WU is modified (step S1 in FIG. 10).

Next, the upper wafer WU is transferred by the wafer transfer device 61 to the surface hydrophilization device 40 of the second processing block G2. The surface hydrophilization device 40 supplies pure water onto the upper wafer WU while rotating the upper wafer WU held by the spin chuck. Then, the supplied pure water diffuses over the surface WU1 of the upper wafer WU, and hydroxyl groups (silanol groups) adhere to the surface WU1 of the upper wafer WU modified in the surface modification device 30, making the surface WU1 hydrophilic. become. The pure water also cleans the front surface WU1 of the upper wafer WU (step S2 in FIG. 10).

Next, the upper wafer WU is transferred by the wafer transfer device 61 to the bonding device 41 of the second processing block G2. Upper wafer WU loaded into bonding apparatus 41 is transferred to position adjustment mechanism 120 by wafer transfer mechanism 111 via transition 110 . Then, the position adjustment mechanism 120 adjusts the horizontal orientation of the upper wafer WU (step S3 in FIG. 10).

After that, the upper wafer WU is transferred from the position adjusting mechanism 120 to the holding arm 131 of the reversing mechanism 130 . Subsequently, in the transfer area T1, the upper wafer WU is turned upside down by turning over the holding arm 131 (step S4 in FIG. 10). That is, the front surface WU1 of the upper wafer WU faces downward.

After that, the holding arm 131 of the reversing mechanism 130 rotates around the driving portion 133 and moves below the upper chuck 140 . Then, the upper wafer WU is transferred from the reversing mechanism 130 to the upper chuck 140 . The back surface WU2 of the upper wafer WU is sucked and held by the upper chuck 140 (step S5 in FIG. 10). Specifically, the vacuum pumps 172b, 173b, and 174b are operated, the upper wafer WU is evacuated by the suction units 172, 173, and 174, and the upper wafer WU is held by the upper chuck 140 by suction.

While the upper wafer WU is being processed in steps S1 to S5, the lower wafer WL is processed following the upper wafer WU. First, the lower wafer WL in the cassette CL is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the processing station 3 .

Next, the lower wafer WL is transferred to the surface modification device 30 by the wafer transfer device 61, and the surface WL1 of the lower wafer WL is modified (step S6 in FIG. 10). The modification of the surface WL1 of the lower wafer WL in step S6 is the same as in step S1 described above.

Thereafter, the lower wafer WL is transferred to the surface hydrophilization device 40 by the wafer transfer device 61, where the surface WL1 of the lower wafer WL is hydrophilized and cleaned (step S7 in FIG. 10). The hydrophilization and cleaning of the surface WL1 of the lower wafer WL in step S7 are the same as in step S2 described above.

After that, the lower wafer WL is transferred to the bonding device 41 by the wafer transfer device 61 . The lower wafer WL loaded into the bonding device 41 is transferred to the position adjustment mechanism 120 by the wafer transfer mechanism 111 via the transition 110 . Then, the position adjustment mechanism 120 adjusts the horizontal orientation of the lower wafer WL (step S8 in FIG. 10).

After that, the lower wafer WL is transferred to the lower chuck 141 by the wafer transfer mechanism 111, and the back surface WL2 is held by suction on the lower chuck 141 (step S9 in FIG. 10). Specifically, the vacuum pumps 207a and 207b are operated to evacuate the lower wafer WL through the suction ports 205a and 205b in the suction areas 204a and 204b, and the lower wafer WL is held by the lower chuck 141 by suction.

Next, horizontal position adjustment of the upper wafer WU held by the upper chuck 140 and the lower wafer WL held by the lower chuck 141 is performed. Specifically, the lower chuck 141 is moved horizontally (X direction and Y direction) by the first lower chuck moving unit 162 and the second lower chuck moving unit 165, and the upper imaging unit 151 is used to detect the lower wafer. Predetermined reference points on the surface WL1 of WL are sequentially imaged. At the same time, the lower imaging unit 161 is used to sequentially image predetermined reference points on the surface WU1 of the upper wafer WU. The captured image is output to the control section 70 . Based on the image captured by the upper imaging unit 151 and the image captured by the lower imaging unit 161, the control unit 70 positions the upper wafer WU and the lower wafer WL so that the reference point of the upper wafer WU and the lower wafer WL match each other. The lower chuck 141 is moved by the first lower chuck moving part 162 and the second lower chuck moving part 165 . Thus, the horizontal positions of the upper wafer WU and the lower wafer WL are adjusted (step S10 in FIG. 10).

In step S10, the lower chuck 141 is horizontally moved as described above, and the lower chuck 141 is rotated by the first lower chuck moving unit 162 to position the lower chuck 141 in the rotational direction (lower chuck 141 direction) is also adjusted.

After that, the lower chuck 141 is moved vertically upward by the first lower chuck moving unit 162 to adjust the vertical positions of the upper chuck 140 and the lower chuck 141, and the upper wafer WU held by the upper chuck 140 and the lower chuck 141 are adjusted. The vertical position of the lower wafer WL held by the lower chuck 141 is adjusted (step S11 in FIG. 10). The distance between the surface WU1 of the lower wafer WU and the surface WU1 of the upper wafer WU is adjusted to a predetermined distance, eg, 50 μm to 200 μm. Then, as shown in FIG. 11, the upper wafer WU and the lower wafer WL are arranged to face each other at a predetermined position.

Next, bonding processing of the upper wafer WU held by the upper chuck 140 and the lower wafer WL held by the lower chuck 141 is performed.

In this embodiment, the case where the suction timing of the second suction portion 173 is set in advance so that the bonding waves are uniform as described above will be described. That is, for example, the sensor 175 detects the expansion of the bonding area A for the upper wafer WU of the previous lot, and based on the detection result, the suction timing of the second suction unit 173 for the upper wafer WU of the current lot is set. It is

First, as shown in FIG. 12, the actuator section 191 is lowered by the cylinder section 192 of the pushing member 190 . Then, as the actuator section 191 descends, the central portion of the upper wafer WU is pressed and descends. At this time, a predetermined pressing load is applied to the actuator section 191 by the air supplied from the electro-pneumatic regulator. Then, the central portion of the upper wafer WU and the central portion of the lower wafer WL are brought into contact and pressed by the pressing member 190 (step S13 in FIG. 10).

In step S13, the operation of the first vacuum pump 172b is stopped to stop the vacuuming of the upper wafer WU from the first suction unit 172, and the second vacuum pump 173b and the third vacuum pump 174b are The upper wafer WU is evacuated by the second suction unit 173 and the third suction unit 174 while the operation is continued.

When the central portion of the upper wafer WU and the central portion of the lower wafer WL are brought into contact with each other and pressed, bonding is started between the central portions. That is, since the surface WU1 of the upper wafer WU and the surface WL1 of the lower wafer WL have been modified in steps S1 and S6, respectively, van der Waals forces (intermolecular forces) are first generated between the surfaces WU1 and WL1. The surfaces WU1 and WL1 are joined together. Furthermore, since the surface WU1 of the upper wafer WU and the surface WL1 of the lower wafer WL are hydrophilized in steps S2 and S7, respectively, the hydrophilic groups between the surfaces WU1 and WL1 are hydrogen-bonded (intermolecular force), and the surface WU1, WL1 are strongly joined together. In this manner, a junction region A is formed.

After that, between the upper wafer WU and the lower wafer WU, a bonding wave is generated in which the bonding area A expands from the central portion of the upper wafer WU and the lower wafer WU toward the outer peripheral portion.

As shown in FIG. 13, the second vacuum pump 173b is stopped while the central portion of the upper wafer WU and the central portion of the lower wafer WL are being pressed by the pressing member 190. Evacuation of the upper wafer WU is stopped. At this time, the suction timings of the eight second suction portions 173 are made different as described above. That is, the second suction unit 173 in the 45° direction releases the upper wafer WU later, and the second suction unit 173 in the 90° direction releases the upper wafer WU earlier. As a result, at the positions of the eight sensors 175, the arrival timing of the bonding area A can be made substantially the same, and the bonding wave can be made uniform.

Furthermore, as shown in FIG. 14, the operation of the third vacuum pump 174b is stopped, and the vacuuming of the upper wafer WU from the third suction unit 174 is stopped. Then, the upper wafer WU is sequentially dropped onto the lower wafer WL and comes into contact therewith, and the bonding between the surfaces WU1 and WL1 due to the van der Waals force and the hydrogen bond is gradually expanded. Thus, the front surface WU1 of the upper wafer WU and the front surface WL1 of the lower wafer WL are brought into contact with each other over the entire surface, and the upper wafer WU and the lower wafer WL are bonded (step S14 in FIG. 10). At this time, since the bonding wave is uniform, distortion of the bonded superposed wafer WT can be suppressed.

In step S14, the eight sensors 175 are used to detect the bonding area A, monitor the bonding wave, and inspect the bonding state between the upper wafer WU and the lower wafer WL. As described above, in the present embodiment, the suction timing of the second suction unit 173 is set in advance so as to make the bonding wave uniform. However, various disturbances may cause the bonding wave to become uneven. In such a case, issuing a warning can improve the product yield. Further, when the bonding wave becomes uneven like this, based on the detection result of the sensor 175, the suction timing of the second suction unit 173 when bonding the subsequent upper wafer WU and the lower wafer WL is corrected. .

After that, as shown in FIG. 15, the actuator portion 191 of the pushing member 190 is lifted to the upper chuck 140 . In addition, the operation of the vacuum pumps 207a and 207b is stopped, the vacuuming of the lower wafer WL in the suction area 204 is stopped, and the suction and holding of the lower wafer WL by the lower chuck 141 is stopped.

The superposed wafer WT in which the upper wafer WU and the lower wafer WL are joined is transferred to the transition device 51 by the wafer transfer device 61, and then transferred to the cassette CT on the predetermined cassette mounting plate 11 by the wafer transfer device 22 of the loading/unloading station 2. be transported. Thus, a series of bonding processes for wafers WU and WL is completed.

According to the above embodiment, the sensor 175 can detect that the upper wafer WU held by the upper chuck 140 is separated from the upper chuck 140, and the bonding wave can be detected. Then, the control unit 70 controls the suction timing of the second suction unit 173 based on the detection result of the sensor 175 . Thereby, the bonding wave can be made uniform, and the distortion of the superposed wafer WT can be suppressed.

Moreover, since the bonding system 1 of the present embodiment includes the surface modification device 30, the surface hydrophilization device 40, and the bonding device 41, the bonding of the wafers WU and WL can be efficiently performed within one system. can be done. Therefore, it is possible to improve the throughput of the wafer bonding process.

<4. Other Embodiments>
Next, another embodiment of the present invention will be described.

In the chuck 140 of the above embodiment, the sensor 175 is arranged in the circumferential direction on a concentric circle with the body portion 170 between the first suction portion 172 and the second suction portion 173 and is arranged at a predetermined interval. However, the arrangement of the sensor 175 is not limited to this.

As shown in FIG. 16 , the sensor 175 is provided between the first suction portion 172 and the second suction portion 173 , and further, on the inner peripheral side of the main body portion 170 from the second suction portion 173 . A plurality, for example, eight, may be arranged side by side in the circumferential direction at predetermined intervals on a concentric circle. That is, the two sensors 175 , the center portion of the first suction portion 172 and the center portion of the second suction portion 173 are arranged on the same center line of the body portion 170 . In the following, the sensor 175 between the first suction portion 172 and the second suction portion 173 will be referred to as sensor 175a, and the sensor 175 on the inner peripheral side of the second suction portion 173 will be referred to as sensor 175b.

In such a case, based on the detection result of the sensor 175b, it is possible to control the suction timing of the second suction portion 173 on the same center line as the sensor 175b. Therefore, the feedforward control of the second suction part 173 can be performed in real time, and the bonding wave can be more reliably made uniform.

Note that the sensor 175a may be omitted and only the sensor 175b may be provided. However, since the sensor 175a is located away from the center of the main body 170, it is possible to detect non-uniform diffusion in the bonding region A more significantly than the sensor 175b. Specifically, for example, when the diameter of the upper wafer WU is 300 mm, the sensor 175a is preferably arranged outside the diameter of 240 mm from the center of the main body 170 .

Further, as shown in FIG. 8, the conventional bonding area A expands into a substantially rectangular shape. Considering the symmetry of the expansion of the joint area A, it is possible to reduce the number of sensors 175 .

For example, two sensors 175 may be arranged on the same circumference of the body portion 170 as shown in FIGS. That is, at least one sensor 175 should be arranged in each of the 45° direction and the 90° direction. In such a case, the 45° direction sensor 175 can be used to infer the expansion of the bond area A in the other 45° direction, and the 90° direction sensor 175 can be used to infer the other 90° direction bond area An extension of A can be inferred.

However, when the sensor 175 is provided over the entire circumference of the main body portion 170 as shown in FIG. 7, it is possible to grasp even the size of the gap between the upper wafer WU and the lower wafer WL. Strictly speaking, the upper wafer WU and the lower wafer WL are not parallel, and may be tilted by a minute distance, for example, several μm. In such a case, the larger the gap between the upper wafer WU and the lower wafer WL, the easier it is for the air to escape to the outside, so the bonding area A expands quickly. Even if there is a difference in the expansion of the bonding area A, if the sensor 175 is provided on the entire circumference of the main body 170, the bonding wave can be detected appropriately.

In the above embodiment, the sensor 175 is used to detect the state of contact between the upper wafer WU and the lower wafer WL to grasp the bonding wave. You can grasp. As shown in FIG. 19, the pushing member 190 is provided with a laser displacement gauge 300 . The laser displacement meter 300 measures the displacement of the target 301 provided in the actuator section 191 to measure the displacement of the actuator section 191 .

In such a case, in step S13 (FIG. 12) of the above embodiment, when the actuator portion 191 of the pressing member 190 is lowered, the displacement of the actuator portion 191 is measured by the laser displacement gauge 300 . Then, when the displacement measured by the laser displacement meter 300 reaches a predetermined threshold value, it is detected that the central portion of the upper wafer WU and the central portion of the lower wafer WL are in contact with each other.

Since the start of the bonding region A can be grasped based on the measurement result of the laser displacement meter 300 in this manner, the bonding wave can be grasped more appropriately. Also, it is possible to control the suction timing of the suction portions 172 to 174 based on the measurement result of the laser displacement meter 300 .

Note that the displacement gauge provided on the pressing member 190 is not limited to the laser displacement gauge 300, and can be arbitrarily selected as long as the displacement of the actuator section 191 can be measured.

In the chuck 140 of the above embodiment, the eight second suction portions 173 are connected to the individual second vacuum pumps 173b. The operation of the suction unit 173 may be collectively controlled. For example, four second suction units 173 in 45° directions may be controlled by one second vacuum pump 173b. Alternatively, the four second suction units 173 in the 90° direction may be controlled by one second vacuum pump 173b.

Similarly, for the eight first suction units 172, one first vacuum pump 172b may collectively control the operations of the plurality of first suction units 172. FIG.

Also, the number and arrangement of the suction units 172 to 174 are not limited to the example shown in FIG. The number of suction portions on the same circumference in the body portion 170 may be other than eight. Also, in the body portion 170, the suction portions may be provided in three or more layers.

In the bonding apparatus 41 of the above embodiment, the lower chuck 141 is configured to be movable in the horizontal direction, but the upper chuck 140 may be configured to be movable in the horizontal direction. Both chucks 141 may be configured to be horizontally movable.

Also, in the bonding apparatus 41 of the above embodiment, the lower chuck 141 is configured to be movable in the vertical direction, but the upper chuck 140 may be configured to be movable in the vertical direction, or the upper chuck 140 may be configured to be movable in the vertical direction. and the lower chuck 141 may be configured to be vertically movable.

Furthermore, in the bonding apparatus 41 of the above embodiment, the lower chuck 141 is rotatable, but the upper chuck 140 may be rotatable, or both the upper chuck 140 and the lower chuck 141 may be may be configured to be rotatable.

In the bonding system 1 of the above embodiment, after bonding the wafers WU and WL by the bonding device 41, the bonded superposed wafer WT may be heated (annealed) at a predetermined temperature. By performing the heat treatment on the superposed wafer WT, the bonding interface can be bonded more firmly.

Although the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to such examples. It is obvious that a person skilled in the art can conceive various modifications or modifications within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. understood as a thing. The present invention is not limited to this example and can take various forms. The present invention can also be applied to substrates other than wafers, such as FPDs (flat panel displays) and mask reticles for photomasks.

REFERENCE SIGNS LIST 1 bonding system 2 loading/unloading station 3 processing station 30 surface modification device 40 surface hydrophilization device 41 bonding device 61 wafer transfer device 70 control unit 140 upper chuck 141 lower chuck 172 first suction unit 173 second suction unit 174 second 3 Suction Part 175 Sensor 190 Pushing Member 300 Laser Displacement Gauge WU Upper Wafer WL Lower Wafer WT Superimposed Wafer

Claims (15)

A bonding apparatus for bonding substrates,
a first holding part that sucks and holds the first substrate on its lower surface;
a second holding part provided below the first holding part for sucking and holding the second substrate on its upper surface;
a pressing member that is provided in the first holding portion and presses the central portion of the first substrate;
a substrate detection unit provided in the first holding unit and configured to detect a state of contact between the first substrate and the second substrate;
The bonding apparatus according to claim 1, wherein the substrate detector measures the flow rate or pressure of gas flowing through a suction pipe for vacuuming the first substrate. The substrate detection unit measures a change in airflow in the suction pipe when the first substrate is separated from the first holding unit, and detects a contact state between the first substrate and the second substrate. The joining device according to claim 1, characterized in that it detects. The first holding unit has a suction unit that vacuums and sucks the first substrate,
3. The bonding apparatus according to claim 1, wherein said substrate detection section is provided in a suction tube connected to said suction section. The bonding apparatus according to any one of claims 1 to 3, wherein a plurality of said substrate detection parts are provided on a circle concentric with said first holding part. 5. The bonding apparatus according to claim 4, wherein said substrate detectors are provided on a plurality of circumferences. The bonding apparatus according to any one of claims 1 to 5, characterized in that said substrate detector is arranged based on the anisotropy of Young's modulus or Poisson's ratio of said first substrate. A joining system comprising the joining apparatus according to any one of claims 1 to 6,
a processing station comprising the bonding apparatus;
holding a plurality of the first substrates, the second substrates, or a plurality of superimposed substrates in which the first substrates and the second substrates are bonded together; a loading and unloading station for loading and unloading two substrates or the superimposed substrate;
The processing station comprises:
a surface modification device that modifies the bonding surface of the first substrate or the second substrate;
a surface hydrophilization device for hydrophilizing the surface of the first substrate or the second substrate modified by the surface modification device;
a transport device for transporting the first substrate, the second substrate, or the polymerized substrate to the surface modification device, the surface hydrophilization device, and the bonding device;
The bonding system, wherein the bonding apparatus bonds the first substrate and the second substrate, the surfaces of which are hydrophilized by the surface hydrophilization device. A bonding method for bonding substrates,
an arrangement step of arranging the first substrate held on the lower surface of the first holding portion and the second substrate held on the upper surface of the second holding portion so as to face each other;
After that, the pressing member provided in the first holding portion for pressing the center portion of the first substrate is lowered, and the pressing member pushes the center portion of the first substrate and the second substrate apart. A pressing step of pressing the central portion to bring it into contact;
After that, in a state in which the central portion of the first substrate and the central portion of the second substrate are in contact with each other, the first substrate and the second substrate are separated from the central portion of the first substrate toward the outer peripheral portion. and a bonding step of sequentially bonding the substrates of
In the bonding step, a substrate detection unit that measures the flow rate or pressure of a gas flowing through a suction pipe for evacuating the first substrate provided in the first holding unit detects the pressure between the first substrate and the first substrate. A bonding method, comprising detecting a contact state of the second substrate. In the bonding step, the substrate detection unit measures a change in airflow in the suction pipe when the first substrate is separated from the first holding unit, and the first substrate and the second substrate are measured. 9. The joining method according to claim 8, wherein the contact state of the two is detected. The first holding unit has a suction unit that vacuums and sucks the first substrate,
10. The joining method according to claim 8, wherein the substrate detection section is provided in a suction tube connected to the suction section. The joining method according to any one of claims 8 to 10, wherein a plurality of said substrate detection parts are provided on a circle concentric with said first holding part. 12. The joining method according to claim 11, wherein the substrate detection portions are provided on a plurality of circumferences. The bonding method according to any one of claims 8 to 12, characterized in that said substrate detector is arranged based on the anisotropy of Young's modulus or Poisson's ratio of said first substrate. A program that runs on a computer of a control unit that controls a welding apparatus so as to cause the welding apparatus to perform the welding method according to any one of claims 8 to 13. A readable computer storage medium storing the program according to claim 14 .

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