CN112348797A - Bridging defect detection method for double-pattern mask optimization result and electronic equipment - Google Patents

Bridging defect detection method for double-pattern mask optimization result and electronic equipment Download PDF

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CN112348797A
CN112348797A CN202011241787.2A CN202011241787A CN112348797A CN 112348797 A CN112348797 A CN 112348797A CN 202011241787 A CN202011241787 A CN 202011241787A CN 112348797 A CN112348797 A CN 112348797A
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pairing
edge
point
pattern
angle
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吴士侠
方伟
丁明
施伟杰
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Shenzhen Branch Dongfang Jingyuan Microelectronics Tech Beijing Co ltd
Dongfang Jingyuan Electron Ltd
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Shenzhen Branch Dongfang Jingyuan Microelectronics Tech Beijing Co ltd
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    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
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    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
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    • G06T7/32—Determination of transform parameters for the alignment of images, i.e. image registration using correlation-based methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
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Abstract

The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for detecting a bridging defect of a double-pattern mask optimization result and electronic equipment, which comprises the following steps: s1, providing a mask layout, wherein the mask layout comprises a first layer of mask patterns and a second layer of mask patterns; s2, obtaining a first layer line segment and a second layer line segment, and placing a detection point on the first layer line segment; s3, setting a pairing rule, and pairing according to the edge type and the corner type; and S4, setting the first search range and the second search range, searching the first exposure pattern and/or the second exposure pattern, calculating the bridging distance based on the search result, and setting the search range of the exposure pattern according to different pairing types, so that the bridging distance obtained by calculation can accurately represent the bridging defects of the first layer mask pattern and the second layer mask pattern, and the yield of the photoetching manufacture is better improved.

Description

Bridging defect detection method for double-pattern mask optimization result and electronic equipment
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for detecting a bridging defect of a double-pattern mask optimization result and electronic equipment.
[ background of the invention ]
With the continuous improvement of circuit integration, the feature size of the lithography pattern is reduced, and the requirements on the lithography resolution and the lithography process are higher and higher. The requirement of logic technology node below 28nm based on the current 193nm immersion lithography machine with 1.35NA needs to depend on double or multiple lithography technology to realize the contraction of the technology node, and the double or multiple lithography technology is developed on the background. The double exposure technology is widely applied to 22nm, 20nm, 16nm and 14nm technology nodes at present. Triple or multiple will also be used for the 10nm technology node. Dual or multiple lithography techniques are applicable to lithography of any wavelength, including EUV. EUV also requires reliance on dual or multiple EUV lithography to meet resolution requirements for technology nodes of 7nm and below.
Double patterning Technology (Double Pattern Technology) has two main implementations: one is exposure-etching-exposure-etching (LELE), two mask plates are used, patterns are transferred to the same hard mask by exposure etching respectively, and finally the patterns of the hard mask are transferred to the substrate by etching; one is self-aligned double exposure (SADP), in which a mask is etched once to expose a core pattern, then a non-lithographic process (deposition of thin film, etching, etc.) is used to multiply the frequency of the lithographic pattern space, and finally, one of the lithography and etching is used to remove the excess pattern. Due to the process requirements of SADP, it is applicable to regular dense line patterns such as memory cells, whereas two-dimensional patterns can only use LELE technology.
After the double pattern mask is optimized, a predicted exposure pattern is obtained through simulation operation, and the predicted exposure pattern is determined to meet the requirements of a process window through verification. Bridging defects, i.e. the distance between adjacent exposed patterns, which is defined as the local minimum of the distance between exposed patterns, we consider the location of greatest risk. The bridging defects between the double patterns can cause overlapping risks of adjacent patterns before splitting, the overlapping risks are reflected on an actual circuit, a circuit short circuit can be caused, irreparable loss is brought, only the bridging defects of the two layers of adjacent patterns after splitting cannot be captured by detecting the defects of the single-layer predicted exposure patterns, and great risks exist, so that the bridging defects of the mask optimization results of the double patterns are very necessary to detect, dead spots can be found in time, the problems are solved by means of further adjusting the mask optimization results or adding auxiliary patterns and the like, the process window requirements are met, and the yield of photoetching manufacturing is greatly improved.
[ summary of the invention ]
In order to overcome the technical problem that the accuracy of detecting the bridging defect of the optimization result of the double-pattern mask is low at present, the invention provides a bridging defect detecting method of the optimization result of the double-pattern mask and electronic equipment.
In order to solve the above technical problems, the present invention provides a technical solution: a bridging defect detection method for a double pattern mask optimization result comprises the following steps: s1, providing a mask layout, wherein the mask layout comprises at least one first layer mask pattern and at least one second layer mask pattern; s2, breaking the edges of the at least one first layer mask pattern and the at least one second layer mask pattern to obtain a plurality of first layer line segments with respect to the first layer mask pattern and a plurality of second layer line segments with respect to the second layer mask pattern, placing a detection point on each of the first layer line segments or each of the second layer line segments; s3, setting a pairing rule about the first layer line segment and the second layer line segment, and forming a pairing type about the first layer line segment and the second layer line segment based on the pairing rule according to the placed detection points, wherein the pairing type comprises edge type pairing and angle type pairing; and S4, defining the predicted exposure pattern of the first layer line segments as a first exposure pattern, defining the predicted exposure pattern of the second layer line segments as a second exposure pattern, setting a first search range of edge type pairing and a second search range of angle type pairing respectively, searching the first exposure pattern and/or the second exposure pattern according to the first search range and the second search range, and calculating the bridging distance between the first exposure pattern and the second exposure pattern based on the search result.
Preferably, the method for detecting the bridging defect of the double pattern mask optimization result further comprises the following steps: and S5, setting a bridging threshold range, and outputting and defining the bridging distance within the bridging threshold range as a bridging defect.
Preferably, in step S2, a detection point is placed at the midpoint of each of the first layer line segments or a detection point is placed at the midpoint of each of the second layer line segments.
Preferably, the edge-type pairings include edge-to-edge pairings, and the corner-type pairings include edge-to-corner pairings, corner-to-side pairings, and corner-to-corner pairings.
Preferably, the pairing rules include edge type pairing rules and corner type pairing rules, and the edge-to-edge pairing is generated based on the edge type pairing rules, and the edge-to-corner pairing, the corner-to-corner pairing and the corner-to-corner pairing are generated based on the corner type pairing rules: the edge-type pairing rules are as follows: the second layer line segment and the first layer line segment are parallel to each other, an overlapping part exists between the first layer line segment and the second layer line segment, and the first layer line segment and the second layer line segment are adjacent; the angle type pairing rule includes: corner-to-corner pairing rules: defining the directions of filling areas in the outlines of all the first layer mask patterns and the second layer mask patterns relative to the first layer line segments or the second layer line segments as the right sides, defining an angle-shaped area where detection points are placed as an angle to be matched, and defining a first edge and a second edge according to the trend of two line segments in the angle-shaped area; defining the angle matched with the angle to be matched as a matched angle; the vertex of the corner to be matched is arranged on the left sides of the two sides of the matched corner at the same time, the vertex of the matched diagonal is arranged on the left sides of the two sides of the corner to be matched at the same time, the direction of the first side of the corner to be matched is opposite to that of the first side of the matched diagonal, and the direction of the second side of the corner to be matched is opposite to that of the second side of the matched diagonal; or the vertex of the angle to be matched is simultaneously positioned on the left sides of the two sides of the matched angle, the vertex of the matched diagonal is simultaneously positioned on the left sides of the two sides of the angle to be matched, the directions of the second side of the angle to be matched and the first side of the matched diagonal are opposite, the directions of the first side of the angle to be matched and the second side of the matched diagonal are opposite, and the opposite directions are defined as that the angle difference is greater than 90 degrees and less than or equal to 180 degrees; angle-to-edge pairing rules: the detection point is placed on the edge A, the angle matched with the edge A is < A, and the peak of the < A is on the left side of the edge A; the distance from the starting point of the angle A to the edge A is not equal to the distance from the vertex of the angle A to the edge A, and the distance from the end point of the angle A to the edge A is not equal to the distance from the vertex to the edge A; side-diagonal pairing rules: the detection point is placed on a side A, the angle matched with the side A is a side A, the top of the side A is on the left side of the side A, and when the angle A is an internal angle, the top of the angle is on the left side of the side A; the distance from the start point of < A to edge A is not equal to the distance from the vertex of < A to edge A, and the distance from the end point of < A to edge A is not equal to the distance from the vertex to edge A.
Preferably, in the step S4, the method specifically includes the following steps: s41, setting a search rule, and searching a first exposure pattern and a second exposure pattern according to the first search range and the second search range based on the search rule; s42, judging whether the first exposure pattern and/or the second exposure pattern is searched according to the search result, if not, executing the following steps: s43, assigning the bridging distance to be 0; if yes, the following steps are executed: s44, matching the first exposure pattern with the second exposure pattern; and S45, setting a bridging distance calculation method, and calculating the bridging distance according to the calculation method.
Preferably, the search rules are as follows: when the pairing type is edge type pairing, the line segment with the detection points is AB, points adjacent to projection points of the detection points on the exposure graph in the same direction of AB are searched along the vertical direction of the line segment AB, and the point with the shortest vertical distance to the line segment AB is the target point; when the pairing type is angle type pairing, the angle where the detection point is placed is angle ACB, C is a vertex angle, the detection point is placed on the line segment AC, points adjacent to projection points of a point C, a point A and a point B on the exposure graph in the same direction as the AB connection line are searched along a bisector of the angle ACB, and a point with the closest vertical distance to the AB connection line is a target point.
Preferably, the search rules are as follows: in the step S41, the first search range corresponds to a distance perpendicular to the line segment AB, and in the step S42, if the target point is not found within the first search range, the first exposure pattern or the second exposure pattern is considered to be lost; in step S44, when the target points are respectively searched forward and backward until the point on the graph cannot be projected perpendicularly to the position of the line segment AB extending for a length, a first exposure graph or a second exposure graph matching the line segment AB is obtained; in the step S41, the second search range corresponds to a distance from the vertex C along the bisector of the angle ACB, and in the step S42, if the target point is not found in the second search range at any of the point a, the point B, and the point C, the first exposure pattern or the second exposure pattern is considered to be lost; in step S44, when the target points are respectively searched forward and backward until the points on the graph cannot be projected onto the connecting line of AB along the direction of the angle bisector of ≈ ACB, a first exposure graph or a second exposure graph matching with izeacb is obtained.
Preferably, in the step S45, the calculation method is as follows: if the first exposure pattern and the second exposure pattern are overlapped, assigning the bridging distance to be 0; otherwise, the bridging distance is calculated as follows: placing a plurality of first calculation points on a first exposure graph, placing second calculation points corresponding to the first calculation points on a second exposure graph, selecting one first calculation point or one second calculation point as a current point, calculating a first distance between the second calculation points corresponding to the current first calculation point, calculating a second distance and a third distance between one first calculation point adjacent to the current first calculation point and the corresponding second calculation point, determining the moving direction of the current point according to the relationship among the second distance, the third distance and the first distance, and updating the current point and the current bridging distance.
In order to solve the above technical problem, the present invention also provides an electronic device, which includes one or more processors; a storage device for storing one or more programs that, when executed by the one or more processors, cause the one or more processors to implement the method for detecting bridging defects as described above for dual pattern mask optimization results.
Compared with the prior art, the detection method for the bridging defect of the double-pattern mask optimization result and the electronic equipment have the following beneficial effects that the method comprises the following steps: s1, providing a mask layout, wherein the mask layout comprises at least one first layer mask pattern and at least one second layer mask pattern; s2, breaking the edges of the at least one first layer mask pattern and the at least one second layer mask pattern to obtain a plurality of first layer line segments with respect to the first layer mask pattern and a plurality of second layer line segments with respect to the second layer mask pattern, placing a detection point on each of the first layer line segments or each of the second layer line segments; s3, setting a pairing rule about the first layer line segment and the second layer line segment, and forming a pairing type about the first layer line segment and the second layer line segment based on the pairing rule according to the placed detection points, wherein the pairing type comprises edge type pairing and angle type pairing; and S4, defining the predicted exposure pattern of the first layer line segment as a first exposure pattern, defining the predicted exposure pattern of the second layer line segment as a second exposure pattern, setting a first search range of edge type pairing and a second search range of angle type pairing, searching the first exposure pattern and/or the second exposure pattern according to the first search range and the second search range, calculating the bridging distance between the first exposure pattern and the second exposure pattern based on the search result, because the mask pattern comprises an edge region and an angle type region, having different influences on the exposure pattern, therefore, the double mask pattern is divided into different pairing types, and the search range of the exposure pattern is set according to different pairing types, so that the calculated bridging distance can accurately represent the bridging defects of the first layer mask pattern and the second layer mask pattern, so as to better improve the yield of the photoetching manufacture.
In step S2, placing a detection point at the midpoint of each first layer line segment or placing a detection point at the midpoint of each second layer line segment can make the placement of the detection points regular, forming a placement rule.
The electronic equipment provided by the invention has the same beneficial effects as the method.
[ description of the drawings ]
FIG. 1 is a flowchart of a method for detecting a bridging defect in a dual pattern mask optimization result according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a mask layout in a cross-over defect detection method for a double-pattern mask optimization result according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a pairing type of edge-to-edge pairing in the method for detecting a bridging defect of a double pattern mask optimization result according to the first embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a pairing type of corner-to-corner pairing in the method for detecting a bridging defect of a double pattern mask optimization result according to the first embodiment of the present invention;
fig. 4A, 4B, and 4C are schematic diagrams of directions of a first layer line segment and a second layer line segment when an angular region is an internal angle in the method for detecting a bridging defect of a double-pattern mask optimization result according to the first embodiment of the present invention;
FIG. 5 is a diagram illustrating a pair type being edge-to-corner pair in the method for detecting a bridging defect of a double pattern mask optimization result according to the first embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a pairing type of corner-to-side pairing in the cross-over defect detection method for dual pattern mask optimization results according to the first embodiment of the present invention;
fig. 7 is a schematic diagram illustrating class identifiers of detection points after pairing types are formed on a mask layout in the method for detecting a cross-over defect of a double-pattern mask optimization result according to the first embodiment of the present invention;
FIG. 8 is a flowchart illustrating the details of step S4 in the method for detecting a double pattern mask optimization result for detecting a bridging defect according to the first embodiment of the present invention;
FIG. 9 is a schematic diagram illustrating the matching of predicted exposure patterns during edge matching in the double-pattern mask optimization method for detecting bridging defects according to the first embodiment of the present invention;
FIG. 10 is a schematic diagram illustrating the matching of predicted exposure patterns during angular matching in the cross-over defect detection method for dual pattern mask optimization according to the first embodiment of the present invention;
FIG. 11 is a schematic diagram illustrating the arrangement and association of first and second calculation points when calculating a bridging distance in edge-type pairing according to the method for detecting a bridging defect of a double-pattern mask optimization result of the present invention;
FIG. 12 is another diagram illustrating the arrangement and association of the first calculation point and the second calculation point when calculating the bridging distance in the edge-type pairing in the method for detecting bridging defects according to the first embodiment of the present invention;
FIG. 13 is a flowchart of a method for detecting a bridging defect that provides a dual pattern mask optimization result in a variation of the first embodiment of the present invention;
fig. 14 is a block diagram of an electronic device provided in a second embodiment of the present invention;
FIG. 15 is a schematic block diagram of a computer system suitable for use with a server implementing an embodiment of the invention.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a first embodiment of the present invention provides a method for detecting a bridging defect of a double pattern mask optimization result, comprising the following steps:
s1, providing a mask layout, wherein the mask layout comprises at least one first layer mask pattern and at least one second layer mask pattern;
s2, breaking the edges of the at least one first layer mask pattern and the at least one second layer mask pattern to obtain a plurality of first layer line segments with respect to the first layer mask pattern and a plurality of second layer line segments with respect to the second layer mask pattern, placing a detection point on each of the first layer line segments or each of the second layer line segments;
s3, setting a pairing rule about the first layer line segment and the second layer line segment, and forming a pairing type about the first layer line segment and the second layer line segment based on the pairing rule according to the placed detection points, wherein the pairing type comprises edge type pairing and angle type pairing; and
s4, defining the predicted exposure pattern of the first layer line segments as a first exposure pattern, defining the predicted exposure pattern of the second layer line segments as a second exposure pattern, setting a first search range of edge type pairing and a second search range of angle type pairing, searching the first exposure pattern and/or the second exposure pattern according to the first search range and the second search range, and calculating the bridging distance between the first exposure pattern and the second exposure pattern based on the search result.
Referring to fig. 2, in step S1, in some embodiments, the first layer mask pattern and the second layer mask pattern on the mask layout are rectangular in shape. Of course, other shapes are possible, such as trapezoidal, irregular polygonal, regular polygonal, or other shapes with angles of 45 °, 135 °, or 90 °. In fig. 2, reference numeral 10 corresponds to a first layer mask pattern corresponding to a region where the fill line is inclined to the left in the drawing, and reference numeral 20 corresponds to a second layer mask pattern corresponding to a region where the fill line is inclined to the right in the drawing.
With reference to fig. 2, in step S2, the edges of the at least one first layer mask pattern and the at least one second layer mask pattern are broken to obtain a plurality of first layer line segments related to the first layer mask pattern and a plurality of second layer line segments related to the second layer mask pattern, and a detection point is placed on each of the first layer line segments or each of the second layer line segments. In the process of optimizing the mask layout, in order to obtain a better optimization result, the edges of the strip-shaped first layer mask pattern and the strip-shaped second layer mask pattern are generally required to be broken to obtain a plurality of first layer line segments and a plurality of second layer line segments with relatively short line segment lengths. The specific setting of the lengths of the first layer line segment and the second layer line segment can be determined according to actual optimization requirements or set according to the requirements of users. The point O in fig. 3 corresponds to a point at which a line segment is broken, and corresponds to a point in the figure having a square shape, and only the reference numeral indicates the point.
When detecting the bridging defect formed by the first layer mask pattern and the second layer mask pattern, a detection point can be placed on the first layer line segment or a detection point can be placed on the second layer line segment,
referring to fig. 2, all M points in the figure are the detecting points that are placed, corresponding to the black circles in the figure, and only the marked parts are illustrated. In step S2, in some specific embodiments, a detection point is placed at the midpoint of each first layer line segment or a detection point is placed at the midpoint of each second layer line segment. In the present invention, the detection point will be specifically described as being placed at the midpoint of the first layer line segment.
In the above step S3, a pairing rule is set with respect to the first layer line segment and the second layer line segment, and a pairing type including an edge type pairing and an angle type pairing is formed with respect to the first layer line segment and the second layer line segment based on the pairing rule in accordance with the placed detection point. The edge type pairing comprises edge-to-edge pairing, and the corner type pairing comprises edge-to-corner pairing, corner-to-edge pairing and corner-to-corner pairing.
In the actual mask pattern imaging process, the imaging corresponding to the edge area and the imaging corresponding to the angle area have larger difference, so that the two methods for calculating the bridging defect have larger difference.
In some specific embodiments, the pairing rules and correspondences include edge-type pairing rules and corner-type pairing rules, where edge-to-edge pairings are generated based on the edge-type pairing rules, and edge-to-corner pairings, corner-to-corner pairings, and corner-to-corner pairings are generated based on the corner-type pairing rules.
The edge-type pairing rules are as follows:
referring to fig. 3, the edge a where the detecting points M are placed is a first-layer line segment, and the corresponding edge B and the corresponding edge C correspond to a second-layer line segment. The second layer line segment and the first layer line segment are parallel to each other, an overlapping portion exists between the first layer line segment and the second layer line segment, and the first layer line segment and the second layer line segment are adjacent to each other.
In this rule, the second layer line segment and the first layer line segment are parallel to each other, i.e., the cross product of the two is 0. The first layer line segment and the second layer line segment are adjacent to each other, that is, no other line segment exists in the vertical direction of the first layer line segment and the second layer line segment, that is, the vertical distance between the first layer line segment and the second layer line segment is the closest. In FIG. 3, edge A forms an edge-to-edge pair with edge B and edge A forms an edge-to-edge pair with edge C.
In order to better obtain the pairing between the edges, a search distance between the first layer line segment and the second layer line segment is set, the search distance is 150-300nm, and optionally, the search distance may also be: 160nm, 180nm, 200nm, 250nm, 280 nm. In a specific embodiment of the present invention, a search distance of 200nm is selected for the search. The search distance is greater than a bridging defect threshold. That is, if the distance from the first-layer line segment is beyond the search distance, it is determined that the second-layer line segment paired with the first-layer line segment cannot be found, that is, it is determined that the first-layer line segment is not paired edge-to-edge and there is no bridging defect risk.
As a variation, when the first layer line segments are line segments belonging to corners of the mask pattern, they are still paired for edge pairs. Therefore, the detection accuracy can be well improved. Of course, if the length of the first layer line segment at the corresponding corner is too small and less than 10nm, the edge-to-edge pairing and the corner-to-corner pairing are not performed any more.
The angle type pairing rules include angle-diagonal pairing rules, angle-to-side pairing rules, and edge-to-diagonal pairing rules.
The corner-to-corner pairing rules are as follows:
referring to fig. 4, the filling area in the outline of all the first layer mask patterns and the second layer mask patterns is defined to be the right side relative to the direction of the first layer line segment or the second layer line segment, and the hatched area shown in fig. 2 is the filling area. Defining an angle type area where the detection points are placed as an angle to be matched, as shown by ≈ A in fig. 4, defining a first side and a second side according to the trend of two line segments in the angle type area; and defining an angle paired with the angle to be matched as a matched angle, such as < D in the figure. The rules are as follows: the vertex of the corner to be matched is arranged on the left sides of the two sides of the matched corner at the same time, the vertex of the matched diagonal is arranged on the left sides of the two sides of the corner to be matched at the same time, the direction of the first side of the corner to be matched is opposite to that of the first side of the matched diagonal, and the direction of the second side of the corner to be matched is opposite to that of the second side of the matched diagonal; or the vertex of the angle to be matched is simultaneously on the left side of the two sides of the matched angle, the vertex of the matched angle is simultaneously on the left side of the two sides of the angle to be matched, the direction of the second side of the angle to be matched is opposite to that of the first side of the matched angle, the direction of the first side of the angle to be matched is opposite to that of the second side of the matched angle, and the direction is defined to be that the angle difference is greater than 90 degrees and less than or equal to 180 degrees in the rule. As shown in fig. 4, the first side is 01, the second side is 02, and in the diagram, < D is the pairing with < a satisfying the above rule, so < a is the angular diagonal type pairing.
Referring to fig. 4A, 4B and 4C, in order to improve the detection accuracy, no detection point is placed between the inner angles of the first layer line segment and the second layer line segment, and the direction along the first edge is defined, where the left side of the second edge on the first edge is an inner angle, and the right side of the second edge on the first edge is an outer angle.
The corner-to-side pairing rules are as follows:
referring to fig. 5, a detection point is placed on the edge a, the angle matched with the edge a is angle a, and the peak of angle a is on the left side of the edge a; the distance from the starting point of the angle A to the edge A is not equal to the distance from the vertex of the angle A to the edge A, the distance from the end point of the angle A to the edge A is not equal to the distance from the vertex of the angle A to the edge A, the edge A is a first layer line segment in the graph 5, and the angle A is a second layer line segment.
The edge-diagonal pairing rules are as follows:
referring to fig. 6, a detection point is placed on ≥ a, the angle matching ≥ a is edge a, the peak of ≥ a is on the left side of edge a, and when it is an internal angle, the peak of angle is on the left side of edge a; the distance from the starting point of the angle A to the edge A is not equal to the distance from the vertex of the angle A to the edge A, the distance from the terminal point of the angle A to the edge A is not equal to the distance from the vertex to the edge A, the angle A is a first layer line segment in the graph, and the edge A is a second layer line segment. It can be seen that the edge-to-corner pairing rules are the same as the edge-to-corner pairing rules.
Referring to fig. 7, after the matching rule matching, point M1 in the figure corresponds to an edge-to-edge matching type, M2 is a diagonal matching type, and M3 corresponds to an edge-to-diagonal matching type and an edge-to-edge matching type.
Referring to fig. 8, step S4 specifically includes the following steps:
s41, setting a search rule, and searching a first exposure pattern and a second exposure pattern according to the first search range and the second search range based on the search rule;
s42, judging whether the first exposure pattern and/or the second exposure pattern is searched according to the search result, if not, executing the following steps:
s43, assigning the bridging distance to be 0;
if yes, the following steps are executed:
s44, matching the first exposure pattern with the second exposure pattern; and
and S45, setting a bridging distance calculation method, and calculating the bridging distance according to the calculation method.
The search rules are as follows:
referring to fig. 9, when the pairing type is edge-type pairing, the line segment with the detection points is AB, the first point adjacent to the projection point of the detection points on the exposure pattern in the same direction as AB is searched along the vertical direction of the line segment AB, and the point with the closest vertical distance to the line segment AB is the target point, which is point P;
referring to fig. 10, when the pairing type is angle pairing, the angle at which the detection points are placed is ≈ ACB, C is a vertex, the detection points are placed on the line segment AC, a first point adjacent to a projection point of the point C on the exposure pattern in the same direction as the line AB along a bisector of the ≈ ACB is searched, and a point closest to the perpendicular distance from the line AB is a target point, which is a point P.
The search rules are as follows:
in the step S41, the first search range corresponds to the distance perpendicular to the line segment AB, and in the step S42, if the target point P is not found within the first search range, it is determined that the first exposure pattern or the second exposure pattern is lost. The first search range has the following numerical values: 40-60nm, the first search range may also have values of: 45nm, 50nm, 55nm, 57nm, 59nm or 60 nm. In the present invention, 60nm is selected as the first search range for searching.
In step S44, when the target points are respectively searched forward and backward until a point on the pattern cannot be projected perpendicularly to a position of the line segment AB extending by a length, a first exposure pattern or a second exposure pattern matching the line segment AB is obtained. The extended lengths are AC and BD. The first exposure pattern and the second exposure pattern can be well prevented from being incompletely matched by setting a certain extending distance, and the accuracy of bridging defect detection is improved.
In step S41, the second search range corresponds to the distance from the vertex C along the bisector of ≈ ACB, and in step S42, if the target point is not found in the second search range by point C, the target points of point a and point B in the second search range are searched in the same way, and if the target point P is not found by both point A, B and point C, it is considered that the first exposure pattern or the second exposure pattern is lost. The second search range is: 50-90nm, optionally, the second search range may also be: 55nm, 60nm, 65nm, 75nm, 80nm or 85 nm. In the present invention, 60nm is selected as the second search range for searching.
In step S44, the target point P is searched forward and backward respectively until the point on the graph cannot be projected onto the connecting line of AB along the direction of the angular bisector of ≈ ACB, and a first exposure graph or a second exposure graph matching with izeacb is obtained.
In the above step S45, the calculation method is as follows:
if the first exposure pattern and the second exposure pattern are overlapped, assigning the bridging distance to be 0; otherwise, the bridging distance is calculated as follows:
referring to fig. 11, a first exposure pattern and a second exposure pattern are generated corresponding to the first layer line segment and the second layer line segment when the corresponding opposite edges are aligned. Wherein the left side corresponds to a first exposure pattern and the right side corresponds to a second exposure pattern. A plurality of first calculation points (which may also be understood as depicting the first exposure pattern with a plurality of broken first calculation points) are placed on the first exposure pattern, including points a0, a1, a2, a3, and so forth. Second calculation points corresponding to the first calculation points (which may also be understood as depicting the first exposure pattern with a plurality of broken second calculation points) are placed on the second exposure pattern, including points b12, b13, b14, and so on.
Selecting a first calculation point or a second calculation point as a current point, calculating a first distance between the second calculation points corresponding to the current first calculation point, calculating a second distance and a third distance between the first calculation point adjacent to the current first calculation point and the corresponding second calculation point, determining the moving direction of the current point according to the relationship between the second distance, the third distance and the first distance, updating the current point and the current bridging distance, and finding out the minimum bridging distance corresponding to the first layer line segment or the second layer line segment, namely defining the minimum bridging distance as a bridging defect.
Referring to fig. 11, specifically, starting along the direction of the first exposure pattern for the first time, the first calculation point of the current point is a1, the point of the second exposure pattern corresponding to the first calculation point a1 is a second calculation point b13, and the rule of point movement is that if the distance of a2b12 is less than the distance of a0b14, the first calculation point of the first exposure pattern moves forward by one, i.e., a2, and if a1b13 is greater than the current bridging distance, the calculation is skipped, and the current point of the first exposure pattern or the second exposure pattern is updated according to the movement rule; if a1b13 is smaller than the current bridging distance, a0b14 and a2b12 are calculated, if the distances satisfying a1b13 are both smaller than the distances of a0b14 and a2b12, the current bridging distance is updated to a1b13, and the current point of the first exposure pattern or the second exposure pattern is updated according to the movement rule.
Referring to fig. 12, if the point moves in the second exposure pattern direction for the second time, the rule of the point movement is that if the distance a2b12 is less than the distance a0b14, the second calculation point of the second exposure pattern moves backward by one, i.e. b12, the current point is updated according to the same rule of the current search direction and the first movement, the above calculation process is correspondingly performed, and the final value of the bridging distance is the requested value.
Referring to fig. 13, the method for detecting a bridging defect of a dual pattern mask optimization result further includes the following steps:
and S5, setting a bridging threshold range, and outputting and defining the bridging distance within the bridging threshold range as a bridging defect.
In this step, the span threshold range of the edge-to-edge pairing type is set to be 0-30nm, and optionally, the span threshold range may also be: 10nm, 15nm, 20nm or 25 nm; the cross-over threshold range of the diagonal pairing type is 0-60nm, and the cross-over threshold range can be 20nm, 30nm, 40nm or 50 nm; the cross-over threshold range for the edge-to-edge pairing type and the edge-to-edge pairing type is 0-35nm, and the cross-over threshold range may be 10nm, 15nm, 20nm or 25 nm.
Referring to fig. 14, a second embodiment of the invention provides an electronic device 300, which includes one or more processors 301;
a storage device 302 for storing one or more programs,
when executed by the one or more processors 301, the one or more programs cause the one or more processors 301 to implement the bridging defect detection method of the dual pattern mask optimization result as provided in the first embodiment or its modified embodiments.
Referring now to FIG. 15, a block diagram of a computer system 800 suitable for use with a terminal device/server implementing an embodiment of the present invention is shown. The terminal device/server shown in fig. 15 is only an example, and should not bring any limitation to the functions and the scope of use of the embodiments of the present application.
As shown in fig. 15, the computer system 800 includes a Central Processing Unit (CPU)801 that can perform various appropriate actions and processes in accordance with a program stored in a Read Only Memory (ROM)802 or a program loaded from a storage section 808 into a Random Access Memory (RAM) 803. In the RAM 803, various programs and data necessary for the operation of the system 800 are also stored. The CPU 801, ROM 802, and RAM 803 are connected to each other via a bus 804. An input/output (I/O) interface 805 is also connected to bus 804.
The following components are connected to the I/O interface 805: an input portion 806 including a keyboard, a mouse, and the like; an output section 807 including a signal such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), and the like, and a speaker; a storage portion 808 including a hard disk and the like; and a communication section 809 including a network interface card such as a LAN card, a modem, or the like. The communication section 809 performs communication processing via a network such as the internet. A drive 810 is also connected to the I/O interface 805 as necessary. A removable medium 811 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 810 as necessary, so that a computer program read out therefrom is mounted on the storage section 808 as necessary.
According to an embodiment of the present disclosure, the processes described above with reference to the flowcharts may be implemented as computer software programs. For example, embodiments of the present disclosure include a computer program product comprising a computer program embodied on a computer readable medium, the computer program comprising program code for performing the method illustrated in the flow chart. In such an embodiment, the computer program can be downloaded and installed from a network through the communication section 809 and/or installed from the removable medium 811. The computer program performs the above-described functions defined in the method of the present invention when executed by the Central Processing Unit (CPU) 801. It should be noted that the computer readable medium of the present invention can be a computer readable signal medium or a computer readable storage medium or any combination of the two. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples of the computer readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
Computer program code for carrying out operations for aspects of the present application may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C + + or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet service provider).
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The computer readable medium carries one or more programs which, when executed by the apparatus, cause the apparatus to perform the steps of: s1, providing a mask layout, wherein the mask layout comprises at least one first layer mask pattern and at least one second layer mask pattern; s2, breaking the edges of the at least one first layer mask pattern and the at least one second layer mask pattern to obtain a plurality of first layer line segments with respect to the first layer mask pattern and a plurality of second layer line segments with respect to the second layer mask pattern, placing a detection point on each of the first layer line segments or each of the second layer line segments; s3, setting a pairing rule about the first layer line segment and the second layer line segment, and forming a pairing type about the first layer line segment and the second layer line segment based on the pairing rule according to the placed detection points, wherein the pairing type comprises edge type pairing and angle type pairing; and S4, defining the predicted exposure pattern of the first layer line segments as a first exposure pattern, defining the predicted exposure pattern of the second layer line segments as a second exposure pattern, setting a first search range of edge type pairing and a second search range of angle type pairing respectively, searching the first exposure pattern and/or the second exposure pattern according to the first search range and the second search range, and calculating the bridging distance between the first exposure pattern and the second exposure pattern based on the search result.
Compared with the prior art, the detection method for the bridging defect of the double-pattern mask optimization result and the electronic equipment have the following beneficial effects that the method comprises the following steps: s1, providing a mask layout, wherein the mask layout comprises at least one first layer mask pattern and at least one second layer mask pattern; s2, breaking the edges of the at least one first layer mask pattern and the at least one second layer mask pattern to obtain a plurality of first layer line segments with respect to the first layer mask pattern and a plurality of second layer line segments with respect to the second layer mask pattern, placing a detection point on each of the first layer line segments or each of the second layer line segments; s3, setting a pairing rule about the first layer line segment and the second layer line segment, and forming a pairing type about the first layer line segment and the second layer line segment based on the pairing rule according to the placed detection points, wherein the pairing type comprises edge type pairing and angle type pairing; and S4, defining the predicted exposure pattern of the first layer line segment as a first exposure pattern, defining the predicted exposure pattern of the second layer line segment as a second exposure pattern, setting a first search range of edge type pairing and a second search range of angle type pairing, searching the first exposure pattern and/or the second exposure pattern according to the first search range and the second search range, calculating the bridging distance between the first exposure pattern and the second exposure pattern based on the search result, because the mask pattern comprises an edge region and an angle type region, having different influences on the exposure pattern, therefore, the double mask pattern is divided into different pairing types, and the search range of the exposure pattern is set according to different pairing types, so that the calculated bridging distance can accurately represent the bridging defects of the first layer mask pattern and the second layer mask pattern, so as to better improve the yield of the photoetching manufacture.
In step S2, placing a detection point at the midpoint of each first layer line segment or placing a detection point at the midpoint of each second layer line segment can make the placement of the detection points regular, forming a placement rule.
The electronic equipment provided by the invention has the same beneficial effects as the method.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A method for detecting bridging defects of a double pattern mask optimization result is characterized by comprising the following steps:
s1, providing a mask layout, wherein the mask layout comprises at least one first layer mask pattern and at least one second layer mask pattern;
s2, breaking the edges of the at least one first layer mask pattern and the at least one second layer mask pattern to obtain a plurality of first layer line segments with respect to the first layer mask pattern and a plurality of second layer line segments with respect to the second layer mask pattern, placing a detection point on each of the first layer line segments or each of the second layer line segments;
s3, setting a pairing rule about the first layer line segment and the second layer line segment, and forming a pairing type about the first layer line segment and the second layer line segment based on the pairing rule according to the placed detection points, wherein the pairing type comprises edge type pairing and angle type pairing; and
s4, defining the predicted exposure pattern of the first layer line segments as a first exposure pattern, defining the predicted exposure pattern of the second layer line segments as a second exposure pattern, setting a first search range of edge type pairing and a second search range of angle type pairing, searching the first exposure pattern and/or the second exposure pattern according to the first search range and the second search range, and calculating the bridging distance between the first exposure pattern and the second exposure pattern based on the search result.
2. The method for detecting bridging defects of a double-pattern mask optimization result of claim 1, wherein: the detection method for the bridging defect of the double-pattern mask optimization result further comprises the following steps:
and S5, setting a bridging threshold range, and outputting and defining the bridging distance within the bridging threshold range as a bridging defect.
3. The method for detecting bridging defects of a double-pattern mask optimization result of claim 1, wherein: in step S2, a detection point is placed at the midpoint of each of the first layer line segments or a detection point is placed at the midpoint of each of the second layer line segments.
4. The method for detecting bridging defects of a double-pattern mask optimization result of claim 1, wherein: the edge type pairing comprises edge-to-edge pairing, and the corner type pairing comprises edge-to-corner pairing, corner-to-edge pairing and corner-to-corner pairing.
5. The method for detecting bridging defects of a double pattern mask optimization result of claim 4, wherein: the pairing rules comprise edge type pairing rules and corner type pairing rules, edge-to-edge pairing is generated based on the edge type pairing rules, and edge-to-corner pairing, corner-to-side pairing and corner-to-corner pairing are generated based on the corner type pairing rules:
the edge-type pairing rules are as follows:
the second layer line segment and the first layer line segment are parallel to each other, an overlapping part exists between the first layer line segment and the second layer line segment, and the first layer line segment and the second layer line segment are adjacent;
the angle type pairing rule includes:
corner-to-corner pairing rules: defining the directions of filling areas in the outlines of all the first layer mask patterns and the second layer mask patterns relative to the first layer line segments or the second layer line segments as the right sides, defining an angle-shaped area where detection points are placed as an angle to be matched, and defining a first edge and a second edge according to the trend of two line segments in the angle-shaped area; defining the angle matched with the angle to be matched as a matched angle; the vertex of the corner to be matched is arranged on the left sides of the two sides of the matched corner at the same time, the vertex of the matched diagonal is arranged on the left sides of the two sides of the corner to be matched at the same time, the direction of the first side of the corner to be matched is opposite to that of the first side of the matched diagonal, and the direction of the second side of the corner to be matched is opposite to that of the second side of the matched diagonal; or the vertex of the angle to be matched is simultaneously positioned on the left sides of the two sides of the matched angle, the vertex of the matched diagonal is simultaneously positioned on the left sides of the two sides of the angle to be matched, the directions of the second side of the angle to be matched and the first side of the matched diagonal are opposite, the directions of the first side of the angle to be matched and the second side of the matched diagonal are opposite, and the opposite directions are defined as that the angle difference is greater than 90 degrees and less than or equal to 180 degrees;
angle-to-edge pairing rules: the detection point is placed on the edge A, the angle matched with the edge A is < A, and the peak of the < A is on the left side of the edge A; the distance from the starting point of the angle A to the edge A is not equal to the distance from the vertex of the angle A to the edge A, and the distance from the end point of the angle A to the edge A is not equal to the distance from the vertex to the edge A;
side-diagonal pairing rules: the detection point is placed on a side A, the angle matched with the side A is a side A, and the peak of the side A is on the left side of the side A; the distance from the start point of < A to edge A is not equal to the distance from the vertex of < A to edge A, and the distance from the end point of < A to edge A is not equal to the distance from the vertex to edge A.
6. The method for detecting bridging defects of a double-pattern mask optimization result of claim 1, wherein: in the step S4, the method specifically includes the following steps:
s41, setting a search rule, and searching a first exposure pattern and a second exposure pattern according to the first search range and the second search range based on the search rule;
s42, judging whether the first exposure pattern and/or the second exposure pattern is searched according to the search result, if not, executing the following steps:
s43, assigning the bridging distance to be 0;
if yes, the following steps are executed:
s44, matching the first exposure pattern with the second exposure pattern; and
and S45, setting a bridging distance calculation method, and calculating the bridging distance according to the calculation method.
7. The method for detecting bridging defects of a double-pattern mask optimization result of claim 6, wherein: the search rules are as follows:
when the pairing type is edge type pairing, the line segment with the detection points is AB, points adjacent to projection points of the detection points on the exposure graph in the same direction of AB are searched along the vertical direction of the line segment AB, and the point with the shortest vertical distance to the line segment AB is the target point;
when the pairing type is angle type pairing, the angle where the detection point is placed is angle ACB, C is a vertex angle, the detection point is placed on the line segment AC, points adjacent to projection points of a point C, a point A and a point B on the exposure graph in the same direction as the AB connection line are searched along a bisector of the angle ACB, and a point with the closest vertical distance to the AB connection line is a target point.
8. The method for detecting bridging defects of a double-pattern mask optimization result of claim 7, wherein: the search rules are as follows:
in the step S41, the first search range corresponds to a distance perpendicular to the line segment AB, and in the step S42, if the target point is not found within the first search range, the first exposure pattern or the second exposure pattern is considered to be lost;
in step S44, when the target points are respectively searched forward and backward until the point on the graph cannot be projected perpendicularly to the position of the line segment AB extending for a length, a first exposure graph or a second exposure graph matching the line segment AB is obtained;
in the step S41, the second search range corresponds to a distance from the vertex C along the bisector of the angle ACB, and in the step S42, if the target point is not found in the second search range at any of the point a, the point B, and the point C, the first exposure pattern or the second exposure pattern is considered to be lost;
in step S44, when the target points are respectively searched forward and backward until the points on the graph cannot be projected onto the connecting line of AB along the direction of the angle bisector of ≈ ACB, a first exposure graph or a second exposure graph matching with izeacb is obtained.
9. The method for detecting bridging defects of a double-pattern mask optimization result of claim 7, wherein: in the above step S45, the calculation method is as follows:
if the first exposure pattern and the second exposure pattern are overlapped, assigning the bridging distance to be 0; otherwise, the bridging distance is calculated as follows:
placing a plurality of first calculation points on a first exposure graph, placing second calculation points corresponding to the first calculation points on a second exposure graph, selecting one first calculation point or one second calculation point as a current point, calculating a first distance between the second calculation points corresponding to the current first calculation point, calculating a second distance and a third distance between one first calculation point adjacent to the current first calculation point and the corresponding second calculation point, determining the moving direction of the current point according to the relationship among the second distance, the third distance and the first distance, and updating the current point and the current bridging distance.
10. An electronic device, characterized in that: comprising one or more processors;
a storage device for storing one or more programs,
when executed by the one or more processors, cause the one or more processors to implement the method for bridging defect detection of dual pattern mask optimization results of any of claims 1-9.
CN202011241787.2A 2020-11-09 2020-11-09 Bridging defect detection method for double-pattern mask optimization result and electronic equipment Pending CN112348797A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116542998A (en) * 2023-03-15 2023-08-04 锋睿领创(珠海)科技有限公司 Contour detection method, device, equipment and medium for photoetching film inductance
CN117215164A (en) * 2023-11-06 2023-12-12 苏州培风图南半导体有限公司 Photoetching simulation method and device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116542998A (en) * 2023-03-15 2023-08-04 锋睿领创(珠海)科技有限公司 Contour detection method, device, equipment and medium for photoetching film inductance
CN116542998B (en) * 2023-03-15 2023-11-17 锋睿领创(珠海)科技有限公司 Contour detection method, device, equipment and medium for photoetching film inductance
CN117215164A (en) * 2023-11-06 2023-12-12 苏州培风图南半导体有限公司 Photoetching simulation method and device
CN117215164B (en) * 2023-11-06 2024-02-02 苏州培风图南半导体有限公司 Photoetching simulation method and device

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