TWI828263B - A layout splitting method, a layout splitting device and an electronic equipment for dualoptical lithography - Google Patents

Abstract

The present disclosure relates to a layout-splitting method, a layout splitting device and an electronic device suitable for dual-lithography technology, the method of which includes steps of: providing an initial layout including a plurality of mask patterns; splitting the plurality of mask patterns into conflicting patterns and non-conflicting patterns based on a first splitting rule; splitting the conflicting patterns into a first-part mask patterns and a second-part mask patterns based on a second splitting rule; splitting the non-conflicting patterns into a first-size mask patterns and a second-size mask patterns based on a third splitting rule; respectively merging part of the first-size mask patterns and the second-size mask patterns with the first-part mask patterns to obtain a first layout, and merging the other part thereof with the second-part mask patterns to obtain a second layout.

Description

Layout splitting method, layout splitting device and electronic equipment suitable for dual photolithography technology

The invention relates to the field of integrated circuit mask design, and in particular to a layout splitting method, layout splitting device and electronic equipment suitable for dual photolithography technology.

With the development of integrated circuit design today, the feature sizes of devices are getting smaller and smaller, approaching the theoretical limit of the exposure system. The imaging on the surface of the silicon wafer after photolithography will produce severe distortion, that is, the optical proximity effect (Optical Proximity Effect) ). As lithography technology faces higher requirements and challenges, various resolution enhancement technologies (Resolution) such as immersion lithography, off-axis illumination, and phase shift mask have been proposed. Enhancement Technology) to improve imaging quality and enhance resolution.

The current mainstream 1.35NA 193nm immersion lithography machine can provide a half-pitch resolution of 36-40nm, which can meet the requirements of the 28nm logic technology node. If it is smaller than this size, double exposure or even multiple exposure technology is required. . There are two main implementation methods of dual lithography technology: one is exposure-etching-exposure-etching (Lithography-Etch- Lithography-Etch), the basic principle of LELE is to split the original layer of lithography patterns into two or more masks, and use multiple exposures and etching to realize the original layer of designed patterns. The other is self-aligned double patterning. The principle of SADP is that after one photolithography, sidewalls are deposited around the first photolithography pattern, and the spatial pattern is multiplied by etching. Frequency.

In the actual application process, because SADP technology has many requirements on layout, the LELE process is more widely used. However, splitting the layout is quite difficult. It not only needs to resolve the conflicting positions in the layout, but also keeps the density of the split layout similar. There are also limitations in running time and memory. Current layout splitting methods will These flaws exist.

In view of this, the present invention proposes a layout splitting method, layout splitting device and electronic equipment suitable for dual photolithography technology.

A solution to the technical problem of one aspect of the present invention is to provide a layout splitting method suitable for dual photolithography technology, which is used to split the initial layout into a first layout and a second layout, including the following steps: providing an initial layout, so The initial layout includes a plurality of mask patterns; the plurality of mask patterns are split into conflicting patterns and non-conflicting patterns; the conflicting patterns are divided into a first partial mask pattern and a second partial mask pattern, There is no conflict between mutual mask patterns in the first partial mask pattern and the second partial mask pattern; the conflict-free pattern is divided into a first size mask pattern and a second size mask pattern of at least two size levels. A size mask pattern, the maximum size of the first size mask pattern is greater than the maximum size of the second size mask pattern; and respectively combining a part of the first size mask pattern and the second size mask pattern with first part mask The patterns are merged to obtain the first layout, and the other part is merged with the second part of the mask pattern to obtain the second layout.

The steps of merging part of the first size mask pattern and the second size mask pattern with the first part of the mask pattern to obtain the first layout, and merging the other part with the second part of the mask pattern to obtain the second layout are as follows. : Split the first-size mask pattern into a third partial mask pattern and a fourth partial mask pattern based on a preset fourth splitting rule. The fourth splitting rule includes: setting any adjacent The edge threshold between the edges of two mask graphics, and the angle threshold between the corners of any two adjacent mask graphics, define one of the two mask graphics that is smaller than the edge threshold or the angle threshold as The third part of the mask pattern and the other are defined as the fourth part of the mask pattern, and the part of the mask pattern that is greater than the edge threshold or the corner threshold is classified as the third part of the mask pattern, and the other part is classified as the fourth part of the mask pattern. ; Merge the first partial mask pattern with the third partial mask pattern to obtain an initial first layout, and merge the second partial mask pattern with the fourth partial mask pattern to obtain an initial second layout; Split one of any two adjacent mask graphics smaller than the edge threshold or angle threshold on the second-size mask graphic into the initial first layout, and the other into the initial second layout, and split the mask graphics that are larger than the side threshold or angle threshold into the initial first layout. Part of the mask pattern with the angle threshold is classified as the initial first layout, and the other part is classified as the initial second layout.

In one embodiment, the plurality of mask graphics are split into conflicting graphics and non-conflicting graphics based on a preset first splitting rule. The preset first splitting rule is as follows: set any two adjacent The edge threshold between the edges of each mask graphic, and the angle threshold between the corners of any two adjacent mask graphics, mask graphics that are smaller than the edge threshold or angle threshold are classified as conflicting graphics, and the remaining ones are Divided into conflict-free graphics.

In one embodiment, the range of the edge threshold is: 80-150nm, and the range of the angle threshold is: The circumference is: 80-150nm.

In one embodiment, the edge threshold is: 110 nm, and the angle threshold is: 110 nm.

In one embodiment, the conflicting graphics are divided into a first partial mask pattern and a second partial mask pattern based on a preset second splitting rule. The default second splitting rule is as follows: set any two adjacent The edge threshold between the edges of each mask pattern, and the angle threshold between the corners of any two adjacent mask patterns. One of the two mask patterns that is smaller than the edge threshold or the angle threshold is defined as the first partial mask. The other is defined as the second part of the mask pattern.

In one embodiment, the mask patterns are arranged regularly. When the mask patterns on the same row or the same column are smaller than the side threshold or the angle threshold, all the mask patterns on the same row or the same column are classified as the first partial mask. mold or second part of the mask.

In one embodiment, the conflict-free graphics are divided into at least two size levels of first-size mask graphics and second-size mask graphics based on a preset third splitting rule. The preset third splitting rule is as follows : Set the area size threshold or length size threshold, and classify the mask graphics on the conflict-free graphics that exceed the area size threshold or the length size threshold as first-size mask graphics, and the rest as second-size mask graphics .

In one embodiment, the conflict-free graphics are divided into at least two size levels of first-size mask graphics and second-size mask graphics based on a preset third splitting rule. The preset third splitting rule is as follows : Set the diagonal length threshold of mask graphics, and classify the mask graphics on conflict-free graphics that exceed the diagonal length threshold as first-size mask graphics, and the rest as second-size mask graphics.

In one embodiment, the first layout and the second layout are colored with a first color and a second color respectively.

In one embodiment, the method of coloring the first layout and the second layout with the first color and the second color respectively is as follows: before merging the first layout and the second layout, first color the first part of the mask pattern with the first color. Coloring, coloring the second partial mask pattern with a second color; then coloring the third partial mask pattern and the fourth partial mask pattern with a first color and a second color respectively; and finally splitting the third partial mask pattern and the fourth partial mask pattern into the initial Second size mask pattern shading on the first layout and the initial second layout.

In one embodiment, each mask pattern in the conflicting pattern uses a circle as a node, and the conflicting nodes are connected with straight lines to form a topological relationship diagram. Based on the topological relationship diagram, the first part is The mask pattern and the second portion of the mask pattern are colored.

Another solution to the technical problem of another aspect of the present invention is to provide a layout splitting device for splitting the initial layout into a first layout and a second layout, including a layout design module for providing the initial layout, so The initial layout includes multiple mask graphics; the first splitting module: splits the multiple mask graphics into conflicting graphics and non-conflicting graphics; the second splitting module: splits the conflicting graphics into It is a first partial mask pattern and a second partial mask pattern, and there is no conflict between the mutual mask patterns in the first partial mask pattern and the second partial mask pattern; the third split module: The conflict-free graphics are divided into at least two size levels of first-size mask graphics and second-size mask graphics, and the maximum size of the first-size mask graphics is greater than the maximum size of the second-size mask graphics; The fourth splitting module: split the first-size mask pattern and the second-size mask pattern respectively to form two parts, one part of which is merged with the first part of the mask pattern to obtain the first layout, and the other part is combined with the second part of the mask pattern. The template graphics are merged to obtain the second layout.

In one embodiment, a coloring module is further included. The coloring module is connected to the fourth splitting module. The coloring module is used to color the first version based on the first color and the second color respectively. Figure and second plate coloring.

Another solution to the technical problem of another aspect of the present invention is to provide an electronic device, which includes one or more processors and a storage device. The storage device is used to store one or more programs. When the one or more The program is executed by the one or more processors, so that the one or more processors implement the layout splitting method suitable for dual lithography technology as described above.

Compared with the prior art, the layout splitting method suitable for dual lithography technology according to the embodiment of the present invention splits the plurality of mask patterns into conflicting patterns and non-conflicting patterns based on a preset first splitting rule. , further split the conflicting graphics and the conflict-free graphics in parallel based on two different splitting rules, and further split the conflicting graphics that have been split based on the preset second splitting rule to resolve the conflict. Instead of going through all the mask graphics on the initial layout one by one to solve the conflict problem one by one, it can greatly improve the splitting speed and accuracy of splitting, and then split the conflict-free graphics to obtain the first size mask. One part of the mask pattern and the second size mask pattern is merged with the first part of the mask pattern obtained by splitting the conflicting pattern to obtain the first layout, and the other part is merged with the second part of the mask pattern to obtain the second layout, It can greatly improve the splitting speed. Based on the third splitting rule, the conflict-free graphics are split into mask graphics of two sizes. It can further split the conflict-free graphics in parallel based on the size range to merge them with the conflicting ones. The split results are merged to obtain the first and second layouts as quickly as possible, which greatly improves efficiency.

The fourth splitting rule described in the embodiment of the present invention is still based on setting the edge threshold between the edges of any two adjacent mask graphics, and the angle threshold between the corners of any two adjacent mask graphics. As a splitting method, it simplifies the splitting rules and reduces the complexity of system operations. degree to improve the efficiency of splitting.

The first splitting rule and the second splitting rule set in the embodiment of the present invention are both based on the edge threshold between the edges of two mask graphics, and the angle between the corners of any two adjacent mask graphics. The threshold is set so that the rules during the splitting process are relatively simple, the calculation complexity is low, the memory loss of the calculator is reduced, and the splitting speed is further improved.

In the embodiment of the present invention, the edge threshold range is set to 80-150nm and the angle threshold range is 80-150nm. The mask pattern separated within this threshold range can meet the imaging resolution requirements of most customers. Improve applicability.

The embodiment of the present invention is based on the regular arrangement of the mask patterns. When the mask patterns on the same row or the same column are less than the side threshold or the angle threshold, all the mask patterns on the same row or the same column are classified as the first partial mask. Or the second part of the mask, which can avoid excessive consideration of the position of the mask pattern after splitting, which can avoid errors and improve efficiency at the same time.

By using two different colors to color the first layout and the second layout respectively, the embodiment of the present invention facilitates loading of the corresponding mask pattern onto the mask template and avoids errors.

In the embodiment of the present invention, by establishing a topological relationship diagram about the conflicting graphics, the established topological relationship can well calibrate the position information of each mask pattern on the conflicting graphics, so as to compare the first part of the mask pattern and the second part of the mask pattern. When coloring some mask graphics, you can color based on the topological relationship diagram to avoid coloring errors. When missing coloring or incorrect coloring occurs, you can use the topological relationship diagram to check and correct.

The layout splitting device and electronic equipment suitable for dual photolithography technology provided by embodiments of the present invention have the same beneficial effects as the layout splitting method suitable for dual photolithography technology.

10:Mask pattern

100:Layout splitting device

30:Layout design module

40: The first split module

50: Second split module

60: The third split module

70: The fourth split module

90: Coloring Module

200:Electronic equipment

201: Processor

202:Storage device

800:Computer system

801: Central processing unit (CPU)

802: Read-only memory (ROM)

803: Random access memory (RAM)

804:Bus

805: Input/output (I/O) interface

806:Input part

807: Output part

808: Storage part

809: Communication part

810:drive

811: Removable media

S1: Steps

S2: Step

S3: Steps

S4: Steps

S5: Steps

S51: Steps

S52: Steps

S53: Steps

T11: Steps

T12: Steps

T13: Steps

In order to make the above and other features, advantages and embodiments of the present invention more obvious and easy to understand, the accompanying drawings are described as follows: Figure 1 is a layout split suitable for dual photolithography technology provided by the first embodiment of the present invention. Flowchart of the method.

Figure 2 is a schematic structural diagram of a partial area of the initial layout provided in step S1 of the present invention.

Figure 3 is a schematic diagram of determining whether there is a conflict between the edges of two mask patterns in the present invention.

Figure 4 is a schematic diagram of determining whether there is a conflict between the corners of two mask patterns in the present invention.

Figure 5 is a schematic diagram of splitting the initial layout into conflict graphics and conflict-free graphics after step S2 is performed.

Figure 6 is an enlarged schematic diagram of the rectangular frame in the circle in Figure 5 .

Figure 7 is another schematic diagram of the initial layout divided into conflicting graphics and non-conflicting graphics after step S2 is performed.

Figure 8 is an enlarged schematic diagram of the rectangular frame in the circle in Figure 7 .

Figure 9 is an enlarged schematic diagram of another rectangular frame in the circle in Figure 7 .

Figure 10 is a schematic diagram split into a first part of the mask pattern and a second part of the mask pattern.

Figure 11 is a schematic diagram of the layout after step S4 is executed.

Figure 12 is a schematic diagram of the area when calculating the area of an unconventional figure.

Figure 13 is a schematic diagram of the area when calculating the area of another unconventional figure.

Figure 14 is a detailed flow chart of step S5.

Figure 15 is a detailed flow chart for coloring the first and second layouts.

Figure 16 is a topological relationship diagram established for conflicting graphics.

Figure 17 is a schematic diagram of the first and second layouts obtained by splitting.

Figure 18 is a schematic diagram of the module of the layout splitting device according to the second embodiment of the present invention.

Figure 19 is a module schematic diagram of another layout splitting device according to the second embodiment of the present invention.

Figure 20 is a schematic diagram of a module of an electronic device according to a third embodiment of the present invention.

Figure 21 is a schematic structural diagram of a computer system suitable for implementing a server according to an embodiment of the present invention.

In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention and are not intended to limit the present invention.

Please refer to Figure 1. The first embodiment of the present invention provides a layout splitting method suitable for dual lithography technology, which is used to split the initial layout into a first layout and a second layout, including the following steps: S1. Provide an initial layout. , the initial layout includes multiple mask graphics; S2. Split the multiple mask graphics into conflict graphics and conflict-free graphics based on the preset first splitting rule; S3. Based on the preset second splitting rule The splitting rule divides the conflicting graphics into a first partial mask pattern and a second partial mask pattern, and there is no conflict between the mutual mask patterns in the first partial mask pattern and the second partial mask pattern. ; S4. Divide the conflict-free graphics into at least two size levels of first-size mask graphics and second-size mask graphics based on the preset third splitting rule. The maximum size of the first-size mask graphics is Greater than the maximum size of the second size mask pattern; and S5, merge part of the first size mask pattern and the second size mask pattern with the first part of the mask pattern to obtain the first layout and the other part. Merge with the second part of the mask pattern to obtain the second layout.

Referring to Figure 2, in step S1, an initial layout can be drawn through graphics drawing software, and the initial layout includes one or more mask patterns 10. Graphics drawing software may include klayout software. The completed initial layout is usually stored in gds file format. The layout in Figure 2 is just one part taken from the original layout.

In step S2, the plurality of mask graphics are split into conflict graphics and conflict-free graphics based on a preset first splitting rule. Resolving conflicts is the primary task to be considered in the layout splitting process. In step S2, the mask graphics are first divided into two types: conflicting and non-conflicting, so as to facilitate further deconflict processing of conflicting mask graphics. , instead of traversing the mask graphics one by one and judging whether there is a conflict one by one, deconflicting the conflicting mask graphics one by one can greatly improve the splitting speed.

Please refer to Figures 3 and 4. In some specific embodiments, the preset first splitting rule is as follows: set the edge threshold between any two adjacent sides of the mask graphics 10, and any adjacent According to the angle threshold of the corners of the two mask graphics 10, the mask graphics 10 that are smaller than the side threshold or the angle threshold are classified as conflict graphics, and the remaining ones are classified as conflict-free graphics. As shown in FIG. 3 , if the distance between two sides of any two adjacent mask patterns 10 is too close, it will affect the imaging resolution, and it is considered that there is a conflict. As shown in Figure 4, two adjacent angles between any two adjacent mask patterns 10 If the distance between them is too close, it will also affect the imaging resolution. It is considered that there is a conflict, so the conflict can be solved by splitting.

It should be noted that there are other ways to judge whether there is a conflict, such as the minimum allowed period, etc.

Optionally, the specific numerical values of the edge threshold and the angle threshold are mainly determined based on the imaging resolution that needs to be achieved during the exposure imaging process. As an example, the specific range of the edge threshold is: 80-150nm, and the specific range of the angle threshold is: 80-150nm. Optionally, the value of the edge threshold can also be: 90nm, 110nm, 130nm or 140nm. The value of the angle threshold can also be: 90nm, 110nm, 130nm or 140nm.

Please refer to Figures 5 and 7, which are schematic diagrams of classifying the mask pattern 10 on the initial layout into conflicting patterns and non-conflicting patterns based on the set edge threshold value of 110nm and the corner threshold value of 110nm. In Figures 5 and 7, the areas marked in light gray are conflict-free graphics, such as the portion of the frame-selected area M, and the portions of the same color as the area M also correspond to conflict-free graphics. Except for the parts marked in light gray, other areas correspond to conflicting graphics and correspond to parts marked in black, such as the frame-selected area N. The part with the same color as the area N also corresponds to a conflicting graphic. Figures 5 and 7 are about two different areas on the initial layout.

In order to better display the specific shapes and arrangement rules of the mask graphics in the conflict graphics and non-conflict graphics in Figures 5 and 7, we further select a conflict graphics area N1 in Figure 5 to enlarge it, as shown in Figure 6 As shown in , it can be clearly seen that in the mask pattern shown in FIG. 6 , the angular distance between two adjacent mask patterns 10 is 0.089 μm (89 nm), which is less than the angular threshold of 110 nm, indicating a conflict pattern. Select a conflict-free area M1 and a conflict pattern area N2 from Figure 7 to enlarge, as shown in Figures 8 and 9, it can be clearly seen that the adjacent mask pattern 10 in Figure 8 The spacing between them is 0.114μm (114nm) and is greater than the edge threshold of 110nm, which is a conflict-free pattern. In the mask pattern 10 shown in FIG. 9 , the spacing between adjacent mask patterns 10 is 0.07 μm (70 nm) and is less than the edge threshold 110 nm, which is a conflict pattern.

In the above-mentioned step S3, the preset second splitting rule is: setting the edge threshold between the edges of any two adjacent mask graphics, and the angle between the corners of any two adjacent mask graphics. For the angle threshold, one of the two mask patterns smaller than the side threshold or the angle threshold is defined as the first partial mask pattern and the other is defined as the second partial mask pattern.

In some specific embodiments, if the mask patterns on the same row or the same column are smaller than the side threshold or the angle threshold, the masks in the same row or the same column may all be classified as the first partial mask or the second partial mask. Of course, the order can also be sorted sequentially, and one of the two adjacent mask patterns is classified as the first partial mask pattern, and the other one is classified as the second partial mask pattern.

In this step S3, the values of the side threshold and the corner threshold set may be the same as or different from those in the above step S2.

Please refer to Figure 10. Usually the mask patterns 10 are arranged regularly. If there is a conflict between the mask patterns 10 between two adjacent rows or two columns, then one row or one column of the two rows will be split as the first part. Mask pattern, another row or column can be used as the second part of the mask pattern. Optionally, the mask patterns 10 on the odd-numbered rows serve as the first partial mask pattern, and the mask patterns 10 on the even-numbered lines serve as the second partial mask pattern. This can not only solve the conflict problem, but also ensure that the distribution density of the mask pattern in the first part of the mask pattern after splitting is similar to the distribution density of the second part of the mask pattern, ensuring the exposure performance of both. If this split cannot resolve the conflict, you can proceed with the subsequent split to obtain the first or second territory. Further adjustments can be made during the effect correction (OPC) stage. For example, in Figure 10, the mask patterns in the odd-numbered rows are classified as the first part of the mask pattern, and the mask patterns in the even-numbered rows are classified as the second part of the mask pattern.

Please refer to Figure 11. In step S4, the preset third splitting rule is as follows: set an area size threshold or a length size threshold, and classify the mask graphics on conflict-free graphics that exceed the area size threshold or exceed the length size threshold. are first-size mask patterns, and the rest are classified as second-size mask patterns. As shown in FIG. 11 , the mask pattern corresponding to area O is a first-size mask pattern, and the mask pattern in area P is relatively small and corresponds to a second-size mask pattern. The P1 area corresponds to the enlarged view of the rectangular frame selection area of area P, and the O1 area corresponds to the enlarged view of area O.

Please refer to Figure 12 and Figure 13. It should be further explained that when the mask pattern is an unconventional shape, such as not a regular rectangle or square, in order to facilitate calculation, the length and size of the side length can be calculated as follows: The starting coordinates and end coordinates in the X-axis direction corresponding to the model graphic, the starting coordinates and end coordinates in the Y-axis direction, and the length of the sides of the rectangular frame formed by connecting the vertices corresponding to the four coordinates and enclosing them corresponds to is the maximum side length of the mask graphic. This eliminates the need to traverse the length of each edge, which can greatly improve the speed.

It should also be noted that in addition to setting an area size threshold or a length size area threshold, a diagonal length threshold or other evaluation index thresholds can also be set.

It should be noted that step S3 and step S4 can be performed at the same time, or step S3 can be performed first and then step S4, or step S4 can be performed first and step S3 can be performed. There is no order limit for the two. It is preferable to perform both at the same time, which can greatly speed up the calculation.

In step S5, when the conflict-free graph has been divided into two based on step S4 Based on the categories of mask graphics of different sizes, the first-size mask graphics and the second-size mask graphics can be processed in parallel, and the first-size mask graphics and the second-size mask graphics can be split at the same time. Instead of splitting conflict-free graphics one by one, the splitting speed can be greatly improved.

Referring to Figure 14, a part of the first size mask pattern and the second size mask pattern are respectively merged with the first part of the mask pattern to obtain the first layout, and the other part is merged with the second part of the mask pattern to obtain the third layout. The steps for the second layout are as follows: S51. Split the first-size mask pattern into a third partial mask pattern and a fourth partial mask pattern based on a preset fourth splitting rule. The fourth splitting rule Including: setting the edge threshold between the edges of any two adjacent mask graphics, and the angle threshold between the corners of any two adjacent mask graphics, and setting the two masks that are smaller than the edge threshold or the angle threshold. One of the mask patterns is defined as the third part mask pattern, the other is defined as the fourth part mask pattern, and the part of the mask pattern that is greater than the edge threshold or the angle threshold is classified as the third part mask pattern, and the other part is classified as the third part mask pattern. is the fourth partial mask pattern; S52. Merge the first partial mask pattern and the third partial mask pattern to obtain the initial first layout, and combine the second partial mask pattern and the fourth partial mask pattern. Merge the graphics to obtain the initial second layout; S53. Split one of any two adjacent mask graphics smaller than the edge threshold or angle threshold on the second-size mask graphics into the initial first layout, and split the other into the initial first layout. The initial second layout, and the part of the mask pattern that is greater than the edge threshold or the corner threshold is classified as the initial first layout, and the other part is classified as the initial second layout.

In step S51, during the process of classifying the part of the mask pattern that is greater than the side threshold or the angle threshold into the third partial mask pattern, and the other part into the fourth partial mask pattern, the process may be: Split one of them into a third part mask pattern and the other into a fourth part mask pattern in spaced order. There can also be other methods to ensure that there is no conflict between the graphics after splitting.

In step S53, the part of the mask pattern that is greater than the edge threshold or the corner threshold is classified as the initial first layout, and the other part is classified as the initial second layout. One of them can be split into a third partial mask pattern in an interval order. , and the other is split into the fourth part of the mask pattern. There can also be other methods to ensure that there is no conflict between the graphics after splitting.

In order to more smoothly load the split graphics on the first and second layouts onto the mask template to prepare the two obtained masks, it is further necessary to analyze the mask graphics belonging to the first layout and the second layout. Mask graphic coloring. That is, the first layout and the second layout are colored with the first color and the second color respectively.

Please refer to Figure 15. The method of coloring the first layout and the second layout with the first color and the second color respectively includes the following steps: T11. Before merging the first layout and the second layout, first use Coloring with the first color, coloring the second partial mask pattern with a second color; T12, then coloring the third partial mask pattern and the fourth partial mask pattern with the first color and the second color respectively; T13, Finally, the second size mask pattern split into the initial first layout and the initial second layout is colored.

Step T11 may be performed after step S3 is performed. Step T12 is executed after step S51 is executed. Step T13 is executed after step S53 is executed.

In a specific embodiment, the first part of the mask pattern can be configured as follows: Use the first color to color, and use the second color to color the second part of the mask pattern: use a circle as a node for each mask pattern in the conflicting pattern, and connect the conflicting nodes with straight lines to form and a topological relationship diagram, coloring the first partial mask graphic and the second partial mask graphic based on the topological relationship diagram.

Please refer to Figure 16, which is a topological relationship diagram established for the mask pattern of Figure 10. The established topological relationship can well calibrate the position information of each mask graphic on the conflicting graphic, so that when coloring the first part of the mask graphic and the second part of the mask graphic, the coloring can be based on the topological relationship diagram reference. To avoid coloring errors, when missing coloring or incorrect coloring occurs, you can use the topological relationship diagram to check and correct.

Please refer to Figure 17. Area A is the first and second layouts after splitting and coloring the initial layout composed of Figures 5 and 7. For a clearer display, area B, area C, area D and area E correspond to enlarged views of the framed rectangular area in area A. Area B and area C are also based on the second size mask pattern split into step S4. . From area B and area C, it can be clearly seen that the second size mask pattern is colored in two different colors at intervals. The one colored with the same color (such as light color) corresponds to the first layout, and the other is darker. The color shading corresponds to the second version.

The area D is a conflict-free pattern split based on step S2, and the area D is further split into a first size mask pattern and a second size mask pattern based on step S4, where the elongated strip mask pattern corresponds to is the first size mask pattern, and the small rectangular mask pattern corresponds to the second size mask pattern. The first-size mask pattern in area D is divided into a third partial mask pattern and a fourth partial mask pattern based on step S51, wherein in area D, the light-colored mask pattern corresponds to the third partial mask pattern. , the dark color mask pattern corresponds to the fourth part of the mask pattern shape. In the area D, the second size mask pattern is colored in light color and dark color in the manner of step S53, where the light color is used as the first layout and the dark color part is used as the second layout. From area E, it can be clearly seen that the conflicting graphics in Figure 7 are divided into two different colors, dark color and light color, after being split according to step S3. Among them, the corresponding coloring of the same color (such as light color) is the first layout, another darker color corresponds to the second layout.

Areas B to E in Figure 17 are partial explanations of obtaining the first and second layouts after performing steps S1 to S5 on the initial layout. The first layout is colored in light colors, and the first layout is colored in dark colors. All are on the second map.

Please refer to Figure 18. A second embodiment of the present invention provides a layout splitting device 100 for optimizing a mask to be optimized, which includes a layout design module 30, a first splitting module 40, and a second splitting module. 50. The third splitting module 60 and the fourth splitting module 70.

Layout design module 30: used to provide an initial layout, the initial layout including multiple mask graphics; first splitting module 40: split the multiple mask graphics based on the preset first splitting rule are conflict graphics and conflict-free graphics; the second splitting module 50: divides the conflict graphics into a first partial mask pattern and a second partial mask pattern based on the preset second splitting rule. There is no conflict between the partial mask pattern and the second partial mask pattern; the third splitting module 60: based on the preset third splitting rule, divide the conflict-free pattern into at least Two size levels of first size mask graphics and second size mask graphics, the maximum size of the first size mask graphics is larger than the maximum size of the second size mask graphics; the fourth split module 70 : Split the first size mask pattern and the second size mask separately. The template pattern forms two parts, one part of which is merged with the first part of the mask pattern to obtain the first layout, and the other part is merged with the second part of the mask pattern to obtain the second layout.

Please refer to Figure 19. The layout splitting device 100 also includes a coloring module 90. The coloring module 90 is connected to the fourth splitting module 70. The fourth splitting module 70 combines the obtained first layout and the third splitting module 70. The second layout is provided to the coloring module 90, which is used to color the first layout and the second layout based on the first color and the second color respectively.

Referring to Figure 20, a third embodiment of the present invention provides an electronic device 200, which includes one or more processors 201 and a storage device 202. The storage device 202 is used to store one or more programs. When the one or more The program is executed by the one or more processors 201, so that the one or more processors 201 implement the mask optimization method as provided in the first embodiment.

Referring now to FIG. 21 , a schematic structural diagram of a computer system 800 suitable for implementing a terminal device/server according to an embodiment of the present invention is shown. The terminal device/server shown in Figure 21 is only an example and should not impose any restrictions on the functions and usage scope of the embodiments of the present application.

As shown in Figure 21, the computer system 800 includes a central processing unit (CPU) 801, which can be loaded into a random access memory (RAM) 803 according to a program stored in a read-only memory (ROM) 802 or from a storage portion 808. program to perform various appropriate actions and processes. In the RAM 803, various programs and data required for the operation of the system 800 are also stored. CPU 801, ROM 802 and RAM 803 are connected to each other through bus 804. Input/output (I/O) interface 805 is also connected to bus 804.

The following components are connected to the I/O interface 805: an input section 806 including a keyboard, a mouse, etc.; an output including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc. Part 807; a storage part 808 including a hard disk, etc.; and a communication part 809 including a network interface card such as a LAN card, a modem, etc. The communication section 809 performs communication processing via a network such as the Internet. Driver 810 is also connected to I/O interface 805 as needed. Removable media 811, such as magnetic disks, optical disks, magneto-optical disks, semiconductor memories, etc., are installed on the drive 810 as needed, so that computer programs read therefrom can be installed into the storage portion 808 as needed.

According to embodiments of the present disclosure, the process described above with reference to the flowchart may be implemented as a computer software program. For example, embodiments of the present disclosure include a computer program product including a computer program carried on a computer-readable medium, the computer program including program code for executing the method illustrated in the flowchart. In such embodiments, the computer program may be downloaded and installed from the network via communication portion 809 and/or installed from removable media 811 . When the computer program is executed by the central processing unit (CPU) 801, the above functions defined in the method of the present invention are executed. It should be noted that the computer-readable medium of the present invention can be a computer-readable signal medium or a computer-readable storage medium, or any combination of the above two. The computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination thereof. More specific examples of computer readable storage media may include, but are not limited to: electrical connections having one or more wires, portable computer disks, hard drives, random access memory (RAM), read only memory (ROM) ), erasable programmable read-only memory (EPROM or flash memory), fiber optics, portable compact magnetic disk read-only memory (CD-ROM), optical memory, magnetic memory, or any suitable combination of the above combination.

Computer program code for performing the operations of the present application may be written in one or more programming languages, including object-oriented programming languages such as Java, Smalltalk, C++, and conventional procedures, or a combination thereof Programming Language - Such as "C" language or similar programming language. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer can be connected to the user's computer through any kind of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computer (such as an Internet service provider). connected via the Internet).

The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functions and operations of possible implementations of systems, methods and computer program products according to various embodiments of the present invention. In this regard, each box in the flowchart or block diagram may represent a module, segment, or portion of code that contains one or more components for implementing the provisions Executable instructions for logical functions. It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown one after another may actually execute substantially in parallel, or they may sometimes execute in the reverse order, depending on the functionality involved. It will also be noted that each block in the block diagram and/or flowchart illustration, and combinations of blocks in the block diagram and/or flowchart illustration, can be configured with dedicated hardware-based hardware that performs the specified functions or operations. system, or can be implemented using a combination of dedicated hardware and computer instructions.

The units involved in the embodiments of the present invention can be implemented in software or hardware. As another aspect, the present invention also provides a computer-readable medium. The computer-readable medium may be included in the device described in the above embodiments; it may also exist separately without being assembled into the device.

The above descriptions are only preferred embodiments of the present invention and are not intended to limit the present invention. It is understood that any modifications, equivalent substitutions and improvements made within the principles of the present invention shall be included in the protection scope of the present invention.

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Claims (15)

A layout splitting method suitable for dual photolithography technology, used to split an initial layout into a first layout and a second layout, which is characterized in that it includes the following steps: providing an initial layout, and the initial layout includes a plurality of masks graphics; split the plurality of mask graphics into conflicting graphics and conflict-free graphics; divide the conflicting graphics into a first partial mask pattern and a second partial mask pattern, the first partial mask pattern and There is no conflict between mutual mask patterns in the second partial mask pattern; the conflict-free pattern is divided into a first size mask pattern and a second size mask pattern of at least two size levels, and the third size mask pattern The maximum size of the first-size mask pattern is greater than the maximum size of the second-size mask pattern; and a part of the first-size mask pattern and the second-size mask pattern is connected to the first part respectively. The mask patterns are combined to obtain a first layout, and another portion is combined with the second portion of the mask patterns to obtain a second layout. The layout splitting method suitable for dual photolithography technology as claimed in claim 1, wherein a portion of the first size mask pattern and the second size mask pattern are separated from the first partial mask pattern respectively. The steps of merging to obtain the first layout, and merging another part with the second partial mask pattern to obtain the second layout are as follows: based on the preset fourth splitting rule, the first size mask pattern is Split into a third part of the mask pattern and a fourth part of the mask pattern, and the fourth splitting rule includes: setting the edge threshold between any two adjacent edges of the mask pattern, and any adjacent The angle threshold of the corners of the two mask graphics will be smaller than the side threshold or the angle threshold of one of the two mask graphics. One is defined as the third partial mask pattern, the other is defined as the fourth partial mask pattern, and the portion of the mask pattern that is greater than the edge threshold or the angle threshold is classified as the third partial mask pattern, and in addition The part is classified into the fourth partial mask pattern; the first partial mask pattern is merged with the third partial mask pattern to obtain the first layout, and the second partial mask pattern is combined with the The fourth part of the mask patterns is merged to obtain the second layout; one of the two adjacent mask patterns smaller than the edge threshold or the angle threshold on the second size mask pattern is split into the first layout, the other is split into the second layout, and the part of the mask pattern that is greater than the edge threshold or the corner threshold is classified as the first layout, and the other part is classified as the second layout. The layout splitting method suitable for dual photolithography technology as claimed in claim 1, wherein the step of splitting the plurality of mask patterns into the conflict patterns and the conflict-free patterns is based on a preset first Splitting rules, the preset first splitting rules are as follows: set the edge threshold between the edges of any two adjacent mask graphics, and the angle and angle of any two adjacent mask graphics. The angle threshold is used to classify mask graphics that are smaller than the side threshold or the angle threshold into the conflict graphics, and the remaining ones are classified into the conflict-free graphics. A layout splitting method suitable for dual photolithography technology as claimed in claim 3, wherein the edge threshold ranges from 80 to 150 nm, and the angle threshold ranges from 80 to 150 nm. A layout splitting method suitable for dual photolithography technology as claimed in claim 4, wherein the edge threshold is: 110 nm, and the angle threshold is: 110 nm. The layout splitting method suitable for dual photolithography technology as claimed in claim 1, wherein the conflicting pattern is divided into the first partial mask pattern and the second partial mask pattern. The step is based on the preset second splitting rule. The preset second splitting rule is as follows: set the edge threshold between any two adjacent mask graphics edges, and set the edge threshold between any two adjacent mask graphics edges. The corners of the mask pattern and the angle thresholds of the corners, one of the two mask patterns smaller than the side threshold or the angle threshold is defined as the first partial mask pattern, and the other is defined as the second partial mask pattern. The layout splitting method suitable for dual photolithography technology as claimed in claim 6, wherein the mask patterns are arranged regularly. When the mask patterns on the same row or the same column are smaller than the side threshold or the angle threshold, the same row Or all mask patterns in the same column are classified into the first partial mask pattern or the second partial mask pattern. The layout splitting method suitable for dual photolithography technology as claimed in claim 1, wherein the conflict-free pattern is divided into the first size mask pattern and the second size mask pattern of at least two size levels. The step is based on the preset third splitting rule. The preset third splitting rule is as follows: Set the area size threshold or the length size threshold, and the conflict-free graphics that exceed the area size threshold or exceed the length size threshold will be The mask patterns are classified as the first size mask pattern, and the rest are classified as the second size mask pattern. The layout splitting method suitable for dual photolithography technology as claimed in claim 1, wherein the conflict-free pattern is divided into the first size mask pattern and the second size mask pattern of at least two size levels. The steps are based on the preset third splitting rule. The preset third splitting rule is as follows: Set the diagonal length threshold of the mask graphic, and remove the mask on the conflict-free graphic that exceeds the diagonal length threshold. graphics are classified as the first size mask graphics, the rest are classified as the second Size mask graphics. The layout splitting method suitable for dual photolithography technology as claimed in claim 2, wherein the first layout and the second layout are colored with a first color and a second color respectively. The layout splitting method suitable for dual photolithography technology as claimed in claim 10, wherein the method of coloring the first layout and the second layout with the first color and the second color respectively is as follows: Before merging the first layout and the second layout, first color the first partial mask pattern with the first color, and color the second partial mask pattern with the second color; and then color the first partial mask pattern with the first color; The third partial mask pattern and the fourth partial mask pattern are colored with the first color and the second color respectively; finally, split into the first layout and the second layout The second size mask pattern is colored. The layout splitting method suitable for dual photolithography technology according to claim 11, further comprising: using a circle as a node for each of the conflicting mask patterns, and dividing one of the conflicting nodes into A topological relationship diagram is formed by connecting them with straight lines, and the first partial mask pattern and the second partial mask pattern are colored based on the topological relationship diagram. A layout splitting device, characterized in that it is used to split an initial layout into a first layout and a second layout, and includes: a layout design module: used to provide an initial layout, and the initial layout includes a plurality of mask patterns; The first splitting module: splits the plurality of mask graphics into conflicting graphics and conflict-free graphics; The second splitting module: divide the conflicting pattern into a first partial mask pattern and a second partial mask pattern, and the first partial mask pattern and the second partial mask pattern are mutually exclusive mask patterns. There is no conflict between them; the third splitting module: divides the conflict-free pattern into a first size mask pattern and a second size mask pattern of at least two size levels, and the maximum size of the first size mask pattern is The size is larger than the maximum size of the second size mask pattern; the fourth split module: split the first size mask pattern and the second size mask pattern respectively to form two parts, one part of which is related to the second size mask pattern. The first part of the mask pattern is combined to obtain the first layout, and the other part is combined with the second part of the mask pattern to obtain the second layout. The layout splitting device of claim 13, further comprising a coloring module connected to the fourth splitting module, and the coloring module is used to respectively divide the layout based on the first color and the second color. The first layout and the second layout are colored. An electronic device, characterized in that it includes one or more processors and a storage device. The storage device is used to store one or more programs. When the one or more programs are processed by the one or more The processor is executed, so that the one or more processors implement the layout splitting method suitable for dual lithography technology as in claim 1.