CN112310803B - VCSEL-based pumping light source and preparation method - Google Patents
VCSEL-based pumping light source and preparation method Download PDFInfo
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- 238000005086 pumping Methods 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 53
- 230000008878 coupling Effects 0.000 claims abstract description 20
- 238000010168 coupling process Methods 0.000 claims abstract description 20
- 238000005859 coupling reaction Methods 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 238000011049 filling Methods 0.000 claims abstract description 16
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 239000000835 fiber Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000006872 improvement Effects 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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Abstract
The invention discloses a VCSEL-based pumping light source and a preparation method thereof, wherein the preparation method comprises the following steps: the two-dimensional VCSEL array chip comprises a two-dimensional VCSEL array chip, a substrate layer and an optical coupling system; the two-dimensional VCSEL array chip is arranged at the bottom of the substrate layer; a plurality of grooves are etched in the top of the substrate layer along the laser emitting direction, and a first material is filled in the grooves to form a filling layer; the refractive index of the first material is higher than that of the substrate material, and the absorption rate of the emitted laser light of the VCSEL is lower than that of the substrate material; the top of the substrate layer is connected with an optical coupling system, and the optical coupling system focuses the emergent laser of the two-dimensional VCSEL array chip into a fiber laser or a solid laser pumped by a semiconductor laser. According to the invention, the groove is etched in the substrate layer, and the material which has a refractive index higher than that of the substrate material and has a lower absorption rate to laser emitted from the VCSEL than that of the substrate material is filled in the groove, so that the loss of the VCSEL as a pumping source can be reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor laser pumping, in particular to a VCSEL-based pumping light source and a preparation method thereof.
Background
The fiber laser has the advantages of good beam quality, high efficiency, good heat dissipation characteristic, high reliability and the like, and is widely applied to the fields of laser fiber communication, laser space long-distance communication, industrial manufacturing, laser engraving, laser cutting, metal and nonmetal drilling/cutting/welding, military and national defense, medical equipment, large-scale infrastructure and the like.
The solid laser of the semiconductor laser pump has the characteristics of small volume, convenient use and large output power, and is commonly used in the aspects of distance measurement, tracking, punching, cutting and welding, semiconductor material annealing, atmospheric detection, spectral research, plasma diagnosis, pulse holography, laser nuclear fusion and the like.
Solid lasers pumped by fiber lasers and semiconductor lasers commonly use edge emitting lasers as pumping sources. Compared with a side-emitting semiconductor laser, a Vertical Cavity Surface Emitting Laser (VCSEL) has the advantages of small volume, circular light spot, low threshold current, single longitudinal mode output, high coupling efficiency and the like, and is more suitable to be used as a pumping source; however, the conventional vertical cavity surface emitting laser has problems such as loss correction.
Disclosure of Invention
In view of the above problems in the prior art, the present invention provides a VCSEL-based pump light source and a fabrication method thereof.
The invention discloses a VCSEL-based pumping light source, which comprises: the two-dimensional VCSEL array chip comprises a two-dimensional VCSEL array chip, a substrate layer and an optical coupling system;
the two-dimensional VCSEL array chip is arranged at the bottom of the substrate layer;
a plurality of grooves are etched in the top of the substrate layer along the laser emitting direction, and a first material is filled in the grooves to form a filling layer; the refractive index of the first material is higher than that of the substrate material, and the laser absorption rate of the first material for VCSEL emission is lower than that of the substrate material;
the top of the substrate layer is connected with the optical coupling system, and the optical coupling system focuses the emergent laser of the two-dimensional VCSEL array chip into a fiber laser or a semiconductor laser pumped solid laser.
As a further improvement of the invention, the bottom of the two-dimensional VCSEL array chip is welded with a heat sink.
As a further improvement of the present invention, the light emitting unit of the two-dimensional VCSEL array chip is in a bottom emission type.
As a further improvement of the present invention, the position of the groove corresponds to the position of the light emitting unit of the two-dimensional VCSEL array chip.
As a further improvement of the invention, the etching depth of the groove is more than 1 micron and does not exceed the thickness of the substrate layer.
As a further development of the invention, the refractive index n of the filling material2The refractive index n of the substrate layer1The numerical aperture NA of the laser emitted by the VCSEL chip on the bottom interface of the filling material meets the following relation:
as a further improvement of the present invention, the optical coupling system includes one of a focusing lens and a fiber coupler.
The invention also discloses a preparation method of the pumping light source, which comprises the following steps:
arranging a two-dimensional VCSEL array chip at the bottom of a substrate layer;
etching a plurality of grooves on the top of the substrate layer along the laser emergent direction;
filling a first material in the groove to form a filler layer; the refractive index of the first material is higher than that of the substrate material, and the laser absorption rate of the first material for VCSEL emission is lower than that of the substrate material;
and connecting an optical coupling system on the top of the substrate layer, and welding a heat sink on the bottom of the two-dimensional VCSEL array chip.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the groove is etched in the substrate layer, and the material which has a refractive index higher than that of the substrate material and has a lower absorption rate to laser emitted from the VCSEL than that of the substrate material is filled in the groove, so that the loss of the VCSEL as a pumping source can be reduced.
Drawings
Fig. 1 is a schematic structural diagram of a VCSEL-based pumping light source according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a method for manufacturing a VCSEL-based pump light source according to an embodiment of the present invention.
In the figure:
1. a two-dimensional VCSEL array chip; 2. a substrate layer; 3. a trench; 4. a filling layer; 5. an optical coupling system; 6. a heat sink.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1, the present invention provides a VCSEL-based pumping light source, including: the two-dimensional VCSEL array chip comprises a two-dimensional VCSEL array chip 1, a substrate layer 2, an optical coupling system 5 and a heat sink 6; wherein,
the light emitting unit of the VCSEL is in a bottom emission mode, namely a two-dimensional VCSEL array chip 1 is arranged at the bottom of a substrate layer 2, and a heat sink 6 is welded at the bottom of the two-dimensional VCSEL array chip 1.
According to the invention, a plurality of grooves 3 are etched on the top of a substrate layer 2 along the laser emitting direction, and a first material is filled in the grooves 3 to form a packing layer 4; wherein the first material of the filler layer 4 has a higher refractive index than the substrate material and a lower absorption rate for the VCSEL emission laser than the substrate material. Further, the position of the trench 3 corresponds to the position of the light emitting unit of the two-dimensional VCSEL array chip 1; preferably, the trenches 3 are etched to a depth greater than 1 micron and not exceeding the thickness of the substrate layer 2. Furthermore, the substrate layer 2 is made of GaAs, GaN or InP, etc., and has a thickness of 400-600 μm.
The top of the substrate layer 2 is connected with an optical coupling system 4, and the optical coupling system 4 comprises one of a focusing lens and a fiber coupler. The optical coupling system 4 focuses the emitted laser of the two-dimensional VCSEL array chip 1 into a fiber laser or a semiconductor laser pumped solid state laser.
Refractive index n of the inventive filling material2Substrate layer refractive index n1The numerical aperture NA of the laser emitted by the VCSEL chip on the bottom interface of the filling material meets the following relation:
as shown in fig. 2, the present invention provides a method for preparing the pump light source, including:
and 4, connecting an optical coupling system 5 on the top of the substrate layer 3, and welding a heat sink 6 on the bottom of the two-dimensional VCSEL array chip 1.
The invention has the advantages that:
according to the invention, the groove is etched in the substrate layer, and the material which has a refractive index higher than that of the substrate material and has a lower absorption rate to laser emitted from the VCSEL than that of the substrate material is filled in the groove, so that the loss of the VCSEL as a pumping source can be reduced.
Examples
Example 1
The invention provides a structure of a GaAs substrate layer with a specific groove and a preparation method thereof, which specifically comprise the following steps:
cleaning and dehydrating a GaAs substrate with the thickness of 350 mu m, and performing film forming treatment by using HMDS; coating a liquid phase photoresist material by adopting a spin coating method; soft baking at 90-100 ℃, and then cooling on a cold plate; aligning a mask plate with a structure corresponding to the VCSEL light-emitting unit in position with the GaAs substrate, and carrying out deep ultraviolet exposure; baking on a hot plate at 100-110 ℃; rotationally spraying a developing solution on the photoresist to dissolve a region where the photoresist is soluble; baking at 120-140 deg.c to volatilize residual photoresist solution; removing the GaAs material with the depth of 345 μm at the position corresponding to the VCSEL light-emitting unit by using a dry etching technology;
putting the GaAs substrate with the groove obtained in the step into a temperature of 300-600 ℃, using nitrogen with the purity of 99% as a carrier gas and oxygen and water vapor as catalysts, sending TTIP heated to 100 ℃ by oil bath into a reaction chamber in a bubbling mode, and depositing TiO2Filling and covering the groove; carrying out polishing treatment;
packing the obtained material with TiO2Is bonded on the VCSEL chip, and is filled with TiO2The grooves of (a) all correspond to the corresponding single VCSEL light emitting unit; welding a heat sink to the bottom of the VCSEL chip; and a focusing lens is connected behind the GaAs substrate layer to focus laser emitted by the VCSEL chip so that the laser can be converged on working substances of a solid laser pumped by the semiconductor laser.
Example 2
The invention provides a structure of a GaAs substrate layer with a specific groove and a preparation method thereof, which specifically comprise the following steps:
cleaning and dehydrating a GaAs substrate with the thickness of 350 mu m, and performing film forming treatment by using HMDS; coating a liquid phase photoresist material by adopting a spin coating method; soft baking at 90-100 ℃, and then cooling on a cold plate; aligning a mask plate with a structure corresponding to the VCSEL light-emitting unit in position with the GaAs substrate, and carrying out deep ultraviolet exposure; baking on a hot plate at 100-110 ℃; rotationally spraying a developing solution on the photoresist to dissolve a region where the photoresist is soluble; baking at 120-140 deg.c to volatilize residual photoresist solution; removing the GaAs material with the depth of 345 μm at the position corresponding to the VCSEL light-emitting unit by using a dry etching technology;
putting the GaAs substrate with the groove obtained in the step into a temperature of 300-600 ℃, using nitrogen with the purity of 99% as a carrier gas and oxygen and water vapor as catalysts, sending TTIP heated to 100 ℃ by oil bath into a reaction chamber in a bubbling mode, and depositing TiO2Filling and covering the groove; carrying out polishing treatment;
filling the obtained mixture with TiO2Is bonded on the VCSEL chip, and is filled with TiO2The grooves of (a) all correspond to the corresponding single VCSEL light emitting unit; welding a heat sink to the bottom of the VCSEL chip; and the back of the GaAs substrate layer is connected with an optical fiber coupler, and laser emitted by the VCSEL chip is focused and can be coupled into a double-cladding special optical fiber working substance of the high-power optical fiber laser.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A VCSEL-based pump light source, comprising: the two-dimensional VCSEL array chip comprises a two-dimensional VCSEL array chip, a substrate layer and an optical coupling system;
the light emitting unit of the two-dimensional VCSEL array chip is in a bottom emission mode, and the two-dimensional VCSEL array chip is arranged at the bottom of the substrate layer;
a plurality of grooves are etched in the top of the substrate layer along the laser emitting direction, and a first material is filled in the grooves to form a filling layer; the etching depth of the groove is smaller than the thickness of the substrate layer, the refractive index of the first material is higher than that of the substrate material, and the absorption rate of the first material to VCSEL emergent laser is lower than that of the substrate material; the position of the groove corresponds to the position of the light emitting unit of the two-dimensional VCSEL array chip, and the refractive index of the filling materialn 2 The refractive index of the substrate layern 1 Numerical aperture of laser emitted by the VCSEL chip at the bottom interface of the filling materialNAThe following relationship is satisfied:
the top of the substrate layer is connected with the optical coupling system, and the optical coupling system focuses the emergent laser of the two-dimensional VCSEL array chip into a fiber laser or a semiconductor laser pumped solid laser;
and a heat sink is welded at the bottom of the two-dimensional VCSEL array chip.
2. The pump light source of claim 1, wherein the trench is etched to a depth greater than 1 micron.
3. The pump light source of claim 1, wherein the optical coupling system comprises one of a focusing lens and a fiber coupler.
4. The method for preparing the pumping light source according to any one of claims 1 to 3, comprising:
arranging a two-dimensional VCSEL array chip at the bottom of a substrate layer;
etching a plurality of grooves on the top of the substrate layer along the laser emergent direction;
filling a first material in the groove to form a filler layer; the refractive index of the first material is higher than that of the substrate material, and the laser absorption rate of the first material for VCSEL emission is lower than that of the substrate material;
and connecting an optical coupling system on the top of the substrate layer, and welding a heat sink on the bottom of the two-dimensional VCSEL array chip.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163953A (en) * | 1977-07-07 | 1979-08-07 | Northern Telecom Limited | Double heterostructure laser for direct coupling to an optical fiber |
| CN1993640A (en) * | 2004-06-04 | 2007-07-04 | 国家半导体公司 | Apparatus and method for a molded waveguide for use with touch screen displays |
| CN104022433A (en) * | 2013-03-01 | 2014-09-03 | 普林斯顿光电子学公司 | Vertical cavity surface emitting laser (VCSEL) pumped fiber optic gain systems |
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- 2020-11-02 CN CN202011204352.0A patent/CN112310803B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163953A (en) * | 1977-07-07 | 1979-08-07 | Northern Telecom Limited | Double heterostructure laser for direct coupling to an optical fiber |
| CN1993640A (en) * | 2004-06-04 | 2007-07-04 | 国家半导体公司 | Apparatus and method for a molded waveguide for use with touch screen displays |
| CN104022433A (en) * | 2013-03-01 | 2014-09-03 | 普林斯顿光电子学公司 | Vertical cavity surface emitting laser (VCSEL) pumped fiber optic gain systems |
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