CN112332215A - VCSEL chip structure with diffraction optical element and preparation method - Google Patents
VCSEL chip structure with diffraction optical element and preparation method Download PDFInfo
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- CN112332215A CN112332215A CN202011205747.2A CN202011205747A CN112332215A CN 112332215 A CN112332215 A CN 112332215A CN 202011205747 A CN202011205747 A CN 202011205747A CN 112332215 A CN112332215 A CN 112332215A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a VCSEL chip structure with a diffractive optical element and a preparation method thereof, wherein the VCSEL chip structure is a bottom emission type structure, and a groove is etched on the top of a substrate layer of the VCSEL chip structure and is filled with a material to form a diffractive optical pattern structure; the top of the substrate layer with the diffraction optical pattern structure is sequentially provided with a transmission medium filling layer and an antireflection film, and external cavity oscillation of VCSEL emergent laser is formed together. The substrate layer with the diffraction optical element and the reflection increasing film form an external cavity structure of the VCSEL light-emitting unit; the substrate layer with the diffraction optical element participates in the external cavity laser oscillation in the external cavity and enables the quality factor M of the output laser equivalent light beam by changing the phase distribution of the light field2Less than 1;meanwhile, the invention can be manufactured in a semiconductor process in one step, does not need an optical element and is easy to realize the miniaturization and the chip of a device.
Description
Technical Field
The invention relates to the technical field of semiconductor chips, in particular to a VCSEL chip structure with a diffractive optical element and a preparation method thereof.
Background
Laser is widely used in many fields, and parallel information and energy transmission is realized in the fields of laser communication, optical disc storage, laser 3D imaging, laser processing and the like. Laser equivalent beam quality factor M2The laser can be less than 1 after being modulated by a related diffraction optical element, and the laser can generate emergent laser with different divergence angles and different cross section intensity distributions according to different design requirements. However, it is realized by an external optical element, and it is difficult to realize device miniaturization and chip formation.
Disclosure of Invention
In view of the above problems in the prior art, the present invention provides a VCSEL chip structure with a diffractive optical element and a method for fabricating the same.
The invention discloses a VCSEL chip structure with a diffractive optical element, wherein the VCSEL chip structure is a bottom emission type structure, and a groove is etched in the top of a substrate layer of the VCSEL chip structure and is filled with a material to form a diffractive optical pattern structure;
the top of the substrate layer with the diffraction optical pattern structure is sequentially provided with a transmission medium filling layer and an antireflection film, and external cavity oscillation of VCSEL emergent laser is formed together.
As a further improvement of the invention, the VCSEL chip structure can also adopt a top emission structure.
As a further improvement of the invention, the device comprises the following components in sequence from bottom to top: the light-emitting diode comprises a heat sink, a lower DBR, an active layer, an oxide layer with an oxidized aperture, an upper DBR, a substrate layer with a diffraction optical pattern structure, a transmission medium filling layer and an antireflection film.
As a further improvement of the invention, the reflectivity of the upper DBR is 60-98%, the reflectivity of the reflection increasing film is 50-90%, and the thickness L of the substrate layer is 50-500 μm.
As a further improvement of the invention, the substrate layer with the diffraction optical pattern structure participates in external cavity laser oscillation in the external cavity and improves the beam quality by changing the phase distribution of the optical field.
As a further improvement of the invention, the VCSEL chip is a single-tube type VCSEL chip or an array type VCSEL chip.
As a further improvement of the present invention, the diffractive optical pattern structure is used for changing the phase of the laser light emitted from the VCSEL chip and participating in external cavity oscillation;
the groove is filled with a medium which is matched with the crystal lattice of the substrate material and has different refractive index, and the medium covers the phase groove surface of the substrate and is used for preventing the groove from causing energy loss to the external cavity oscillation.
In a further improvement of the present invention, the transmission medium filling layer is filled with a medium that can pass through laser, or an air medium is directly used without being filled in the transmission medium filling layer.
The invention also discloses a preparation method of the VCSEL chip structure, which comprises the following steps:
s1, preparing a bottom emission VCSEL chip;
s2, making a diffraction optical element pattern of a phase structure on the VCSEL chip substrate;
s3, growing and filling materials which are matched with the substrate in a lattice mode and have different refractive indexes in the phase groove etched on the substrate;
s4, preparing a transmission medium filling layer on the top of the chip, or directly transmitting light by adopting air;
s5, preparing a high-reflection film on the transmission medium filling layer or placing a high-reflection mirror.
Compared with the prior art, the invention has the beneficial effects that:
in the invention, a groove is etched on the top of a substrate layer and is filled with corresponding materials to form a phase control type diffraction optical pattern structure, namely a diffraction optical element; the substrate layer with the diffractive optical element and the reflection increasing film form an external cavity structure of the VCSEL light emitting unit, namely the substrate with the diffractive optical element, the filling medium layer and the reflection increasing film form external cavity oscillation of VCSEL emergent laser; the substrate layer with diffraction optical element participates in external cavity laser oscillation in the external cavity and outputs by changing the phase distribution of the optical fieldLaser equivalent beam quality factor M2Less than 1; meanwhile, the invention can be manufactured in a semiconductor process in one step, does not need an optical element and is easy to realize the miniaturization and the chip of a device.
Drawings
Fig. 1 is a schematic diagram of a VCSEL chip structure with a diffractive optical element according to an embodiment of the present invention.
In the figure:
1. a heat sink; 2. a lower DBR; 3. an active layer; 4. an oxide layer; 5. an upper DBR; 6. a substrate layer; 7. a diffractive optical pattern structure; 8. a transmission medium fill layer; 9. an antireflection film.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention. The embodiments described are illustrative of some, but not all embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
the invention provides a VCSEL chip structure with a diffractive optical element and a preparation method thereof, wherein the VCSEL chip structure is a bottom emission type structure, and a groove is etched on the top of a substrate layer of the VCSEL chip structure and is filled with a material to form a diffractive optical pattern structure; the top of the substrate layer with the diffraction optical pattern structure is sequentially provided with a transmission medium filling layer and an antireflection film, and external cavity oscillation of VCSEL emergent laser is formed together. In the invention, a groove is etched on the top of a substrate layer and is filled with corresponding materials to form a phase control type diffraction optical pattern structure, namely a diffraction optical element; the substrate layer with the diffractive optical element and the reflection increasing film form an external cavity structure of the VCSEL light emitting unit, namely the substrate with the diffractive optical element, the filling medium layer and the reflection increasing film form external cavity oscillation of VCSEL emergent laser; substrate layer with diffractive optical elementParticipating in external cavity laser oscillation in the external cavity and changing the phase distribution of the optical field to make the quality factor M of the equivalent light beam of the output laser2Less than 1; meanwhile, the invention can be manufactured in a semiconductor process in one step, does not need an optical element and is easy to realize the miniaturization and the chip of a device.
As shown in fig. 1, the invention provides a VCSEL chip structure with a diffractive optical element, which comprises, from bottom to top: a heat sink 1, a lower DBR2, an active layer 3, an oxide layer 4 with an oxide aperture, an upper DBR5, a substrate layer 6 with a diffractive optical pattern structure 7, a transmission medium filling layer 8 and an antireflection film 9; wherein the content of the first and second substances,
the reflectivity of the upper DBR5 is 60% -98%, the reflectivity of the reflection increasing film 9 is 50% -90%, and the thickness L of the substrate layer 6 is 50-500 μm.
The substrate layer 6 with the diffraction optical pattern structure participates in external cavity laser oscillation in the external cavity and achieves the quality of light beams by changing the phase distribution of a light field.
The VCSEL chip is a single-tube VCSEL chip or an array VCSEL chip; meanwhile, the VCSEL chip of the present invention may also use a top emission type VCSEL.
The diffraction optical pattern structure is used for changing the phase of laser emitted by the VCSEL chip and participating in external cavity oscillation; the grooves are filled with media which are matched with the crystal lattices of the substrate materials and have different refractive indexes, and the media cover the phase groove surfaces of the substrate and are used for preventing the grooves from causing energy loss to the external cavity oscillation. The substrate layer of the bottom emission VCSEL array chip is mainly made of GaAs, and also can be made of InP materials or GaN materials; the phase groove filling medium is mainly AlAs, SiO2The material may be a material having a high transmittance with respect to the substrate material.
The transmission medium filling layer is filled with SiO2Sapphire, etc. may be filled with laser medium, or air medium may be used as the transmission medium filling layer.
The phase groove structure etched by the diffraction optical layer on the substrate can be designed into different geometric shapes, and the geometric size of the phase groove can be specifically designed according to light spots at the position.
The invention provides a preparation method of the VCSEL chip structure, which comprises the following steps:
s1, preparing a bottom emission VCSEL chip;
s2, making a diffraction optical element pattern of a phase structure on the VCSEL chip substrate;
s3, growing and filling materials which are matched with the substrate in a lattice mode and have different refractive indexes in the phase groove etched on the substrate;
s4, preparing a transmission medium filling layer on the top of the chip, or directly transmitting light by adopting air;
s5, preparing a high-reflection film on the transmission medium filling layer or placing a high-reflection mirror.
The invention has the advantages that:
the substrate layer with the diffractive optical element participates in external cavity laser oscillation in the external cavity and enables the quality factor M of the output laser equivalent light beam by changing the phase distribution of the light field2Less than 1; meanwhile, the invention can be manufactured in a semiconductor process in one step, does not need an optical element and is easy to realize the miniaturization and the chip of a device.
Examples
The invention provides a VCSEL light splitting structure of a substrate type diffraction optical element, which comprises a DBR with the reflectivity of 99.9%, a top emission type VCSEL chip, a DBR with the reflectivity of 90%, a GaAs substrate (comprising a diffraction optical element phase groove), a filling medium layer and an antireflection film.
Epitaxially growing a top-emitting VCSEL chip, wherein the reflectivity of the lower DBR is 99.9%, the reflectivity of the upper DBR is 90%, photoetching a phase groove of the diffraction optical element on the surface of the GaAs substrate, specifically photoetching a circular groove slightly smaller than the geometric dimension of a light spot at the position, using dry etching, and baking the substrate pretreated by deionized water in an oven for ten minutes; taking out, coating positive photoresist by using a spin coater, baking before exposure, performing direct-writing exposure, and developing by using a dilute KOH solution at room temperature for 30 s; and cleaning the film by using deionized water, and putting the film into an oven to be subjected to film hardening treatment for about 10 minutes. Finally, dry etching (e.g. using ICP etching system, CHF)3The flow rate was 60sccm and the argon flow rate was 40sccm) and a related photoresist stripping treatment using acetone and deionized water.
After the phase groove is formed, the groove is filled with an AlAs medium. Depositing a growth layer on the wall and the bottom of an etched groove by thermal oxidation, performing gas reaction by using a high-density plasma source in an ICP (inductively coupled plasma) induction mode by using an HDPCVD (high-density plasma deposition) technology, and growing SiO (silicon dioxide) on a deposition core layer on the wall and the bottom of the groove2Until the etched circular groove is filled and covered to be used as an outer cavity, the outer cavity can be plated with a reflection increasing film with the reflectivity of 70 percent, and finally the manufactured structure is welded on a heat sink.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A VCSEL chip structure with a diffractive optical element is characterized in that the VCSEL chip structure is a bottom emission type structure, a groove is etched on the top of a substrate layer of the VCSEL chip structure and is filled with a material, and a diffractive optical pattern structure is formed;
the top of the substrate layer with the diffraction optical pattern structure is sequentially provided with a transmission medium filling layer and an antireflection film, and external cavity oscillation of VCSEL emergent laser is formed together.
2. The VCSEL chip structure of claim 1, comprising, in order from bottom to top: the light-emitting diode comprises a heat sink, a lower DBR, an active layer, an oxide layer with an oxidized aperture, an upper DBR, a substrate layer with a diffraction optical pattern structure, a transmission medium filling layer and an antireflection film.
3. A VCSEL chip structure in accordance with claim 2, wherein the upper DBR has a reflectivity of 60% -98%, the reflectivity of the reflection enhancing film is 50% -90%, and the thickness L of the substrate layer is 50-500 μm.
4. A VCSEL chip structure in accordance with claim 1, wherein the substrate layer with the diffractive optical pattern structure participates in external cavity laser oscillation within the external cavity and improves beam quality by changing optical field phase distribution.
5. The VCSEL chip structure of claim 1, wherein the VCSEL chip is a single-tube type VCSEL chip or an array type VCSEL chip.
6. The VCSEL chip structure of claim 1, wherein the diffractive optical pattern structure is configured to change a phase of the laser light emitted from the VCSEL chip and participate in external cavity oscillation;
the groove is filled with a medium which is matched with the crystal lattice of the substrate material and has different refractive index, and the medium covers the phase groove surface of the substrate and is used for preventing the groove from causing energy loss to the external cavity oscillation.
7. The VCSEL chip structure of claim 1, wherein the transmission medium filling layer is filled with a medium that can pass laser light, or the transmission medium filling layer is not filled with the medium and directly adopts an air medium.
8. A method for fabricating a VCSEL chip structure as claimed in any of claims 1 to 7, comprising:
s1, preparing a bottom emission VCSEL chip;
s2, making a diffraction optical element pattern of a phase structure on the VCSEL chip substrate;
s3, growing and filling materials which are matched with the substrate in a lattice mode and have different refractive indexes in the phase groove etched on the substrate;
s4, preparing a transmission medium filling layer on the top of the chip, or directly transmitting light by adopting air;
s5, preparing a high-reflection film on the transmission medium filling layer or placing a high-reflection mirror.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011205747.2A CN112332215A (en) | 2020-11-02 | 2020-11-02 | VCSEL chip structure with diffraction optical element and preparation method |
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| CN202011205747.2A CN112332215A (en) | 2020-11-02 | 2020-11-02 | VCSEL chip structure with diffraction optical element and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115000809A (en) * | 2022-05-25 | 2022-09-02 | 北京工业大学 | Coherent array surface emitting semiconductor laser structure and preparation method thereof |
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| JP2009086613A (en) * | 2007-09-13 | 2009-04-23 | Sumitomo Electric Ind Ltd | Relief type diffraction optical device and manufacturing method thereof |
| CN102664347A (en) * | 2012-05-04 | 2012-09-12 | 中国科学院长春光学精密机械与物理研究所 | High-power electrically pumped vertical external cavity surface emitting laser with mode control structure |
| US20130308662A1 (en) * | 2012-05-15 | 2013-11-21 | Finisar Corporation | Wavelength Tunable Laser |
| CN108933382A (en) * | 2018-06-21 | 2018-12-04 | 武汉光迅科技股份有限公司 | A kind of grating, DBR laser and grating preparation method |
| CN111769437A (en) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | Bragg grating, preparation method thereof and distributed feedback laser |
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2020
- 2020-11-02 CN CN202011205747.2A patent/CN112332215A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009086613A (en) * | 2007-09-13 | 2009-04-23 | Sumitomo Electric Ind Ltd | Relief type diffraction optical device and manufacturing method thereof |
| CN102664347A (en) * | 2012-05-04 | 2012-09-12 | 中国科学院长春光学精密机械与物理研究所 | High-power electrically pumped vertical external cavity surface emitting laser with mode control structure |
| US20130308662A1 (en) * | 2012-05-15 | 2013-11-21 | Finisar Corporation | Wavelength Tunable Laser |
| CN108933382A (en) * | 2018-06-21 | 2018-12-04 | 武汉光迅科技股份有限公司 | A kind of grating, DBR laser and grating preparation method |
| CN111769437A (en) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | Bragg grating, preparation method thereof and distributed feedback laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115000809A (en) * | 2022-05-25 | 2022-09-02 | 北京工业大学 | Coherent array surface emitting semiconductor laser structure and preparation method thereof |
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