JP2000101185A - Surface-emitting type semiconductor laser and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To set the radiation angle of a laser beam to a small value and to achieve resistance with respect to a substance for deteriorating the performance of a semiconductor. SOLUTION: In a laser 100, a laser beam is emitted from a resonator in the vertical direction on a semiconductor substrate to the semiconductor substrate in the vertical direction, a resin layer 52 is provided on the surface of a semiconductor laminate 120, and a lens-shaped part 54 is formed on the surface part. In the laser 100, a semiconductor laminate 120 including the resonator is formed on the semiconductor substrate, a stamper with the inversion-shaped part of the lens-shaped part 54 is aligned to the resonator of the semiconductor laminated 120, a resin liquid-form object is included between the semiconductor deposition body 120, and the stamper, the resin liquid-shaped object is cured for forming a resin layer, and the lens-shaped part is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-emitting type semiconductor laser which emits a laser beam perpendicularly to a semiconductor substrate, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A surface-emitting type semiconductor laser has a characteristic that a laser radiation angle is isotropic and smaller than that of an edge laser. When the surface-emitting type semiconductor laser is applied to an optical fiber having a large core diameter, for example, a plastic optical fiber, the laser light can be efficiently incident directly into the fiber without using a lens or the like due to the above-described features. . Therefore, by combining a plastic optical fiber and a surface-emitting type semiconductor laser, an optical communication module having an extremely simple configuration can be realized.

[0003]

However, the plastic optical fiber has a drawback that transmission loss is large. Therefore, a light source having a large light output is required to increase the transmission distance. In order to increase the laser output of the surface emitting semiconductor laser, it is effective to increase the laser emission aperture. However, when the laser emission aperture is increased, there is a problem that the radiation angle increases. In order to simplify the configuration of the optical transmission module, direct coupling, that is, when laser light is directly incident on the optical fiber without using a lens between the optical fiber and the light source, an increase in radiation angle is caused by coupling. Efficiency, that is, a reduction in the amount of laser light incident into the fiber core and a reduction in the mounting margin are caused. For this reason, there is a problem that it is difficult to ensure both the length of the transmission distance and the simplification of the configuration of the optical transmission module by direct coupling.

[0004] Further, in the surface-emitting type semiconductor laser, when the semiconductor constituting the surface-emitting type semiconductor laser is exposed, its performance is deteriorated by oxygen, moisture and the like.

An object of the present invention is to make it possible to set the emission angle of a laser beam to a small value, and to further provide a surface-emitting type semiconductor laser which is resistant to substances which deteriorate the performance of the semiconductor such as oxygen and moisture, and a semiconductor laser having the same. It is to provide a manufacturing method.

[0006]

A surface emitting semiconductor laser according to the present invention has a vertical resonator on a semiconductor substrate and emits a laser beam from the resonator in a direction perpendicular to the semiconductor substrate. In a light emitting type semiconductor laser, a resin layer is provided on a surface of a semiconductor stack including the resonator, and a lens-shaped portion is formed on a surface portion of the resin layer located above the resonator.

According to this surface-emitting type semiconductor laser (hereinafter referred to as "surface-emitting laser"), since a resin layer is provided on the surface of a semiconductor deposit, a laser element can be formed from a substance that degrades a semiconductor such as oxygen or moisture. Can be protected.

Further, since a lens-shaped portion is formed on the surface of the resin layer located on the resonator,
The laser beam can be refracted on the surface of the lens-shaped portion, that is, the laser emission surface, and the radiation angle can be narrowed. Further, according to this configuration, since the radiation angle on the laser emission surface can be narrowed, the radiation angle can be set small even if the laser emission aperture is increased in order to increase the laser output.

Further, the surface emitting laser according to the present invention may have a configuration in which a contact hole continuous with an electrode is provided at a predetermined position of the resin layer.

The surface emitting laser according to the present invention can be formed by a manufacturing method including the following steps (a) and (b).

(A) depositing a plurality of semiconductor layers on a semiconductor substrate to form a semiconductor deposit including a resonator;
And (b) forming a resin layer using a stamper having an inverted shape of the lens shape, wherein the inverted shape is positioned on a resonator of the semiconductor deposit body.
In a state where the stamper is aligned, a resin liquid is interposed between the semiconductor depositing body and the stamper, and the resin liquid is cured to form a resin layer. Forming a lens-shaped portion on the surface of the resin layer.

According to this manufacturing method, since the lens-shaped portion can be formed using the stamper, it is simpler than the process of forming the lens-shaped portion by the photolithography method, and the process required for the manufacturing is simple. Can be simplified. In addition, once the stamper is created, it can be used again and again, so that the manufacturing cost can be reduced and it is economical.

It is preferable that the stamper is subjected to a surface treatment so that the adhesion between the mold surface and the resin layer is lower than the adhesion between the resin layer and the semiconductor deposit.

By applying such a surface treatment to the stamper, when the resin layer and the stamper are separated, the separation can be facilitated.

[0015] The stamper may further have an inverted shape of a contact hole. Thereby, a lens-shaped part and a contact hole can be simultaneously formed.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

(Device Structure) FIG. 1 is a sectional view schematically showing a surface emitting laser 100 according to an embodiment of the present invention.

The surface emitting laser 100 shown in FIG.
a _0.15 Ga _0.85 As and AlA on a substrate 109
and a pair of distributed reflection multilayer mirrors (hereinafter referred to as “lower DBR mirrors”) 104 having a thickness of 3
nm GaAs well layer and 3 nm thick Al _0.3 Ga _0.7
A quantum well active layer 105 composed of an As barrier layer and the well layer composed of three layers; Al _0.15 Ga _0.85 As and Al _0.9
30 pairs of distributed reflection type multilayer mirrors (hereinafter referred to as “upper DBR mirrors”) 10 in which Ga _0.1 As is alternately stacked
3 and the contact layer 102 are sequentially laminated.

The upper DBR mirror 103 is made p-type by doping Zn, and the lower DBR mirror 104 is made n-type by doping Se. Therefore, the upper DBR mirror 103, the quantum well active layer 105 not doped with impurities, and the lower DBR mirror 104 form a pin diode.

The contact layer 102 needs to be made of a material that can make ohmic contact with an upper electrode 106 described later. In the case of an AlGaAs-based material, for example, 10 ¹⁹ cm
Al _0.15 G doped with ^-3 or more high concentration impurities
a _0.85 As.

Contact layer 102, upper DBR mirror 1
03, quantum well active layer 105 and lower DBR mirror 1
The columnar portion 101 is formed by etching in a mesa shape except for a predetermined region up to the middle of 04.

Further, the insulating layer 108 is formed so as to cover a part of the side surface of the columnar portion 101 and the upper surface of the lower DBR mirror 104.

The upper electrode 106 is
On the upper surface of the insulating layer 108, the side surface of the columnar portion 101 that is in contact with the contact layer
Is formed so as to cover a part of the surface. Also,
Below the n-type GaAs substrate 109, a lower electrode 107 is formed.

Further, a resin layer 52 is formed so as to cover the upper surface of the columnar portion 101 and the upper electrode 106. Further, a lens-shaped portion 54 is formed on the surface of the resin layer 52 located on the columnar portion 101. Further, a contact hole 70 is formed in the resin layer 52 so that a part of the upper electrode 106 is exposed.

The operation of the surface emitting laser 100 will be described below.

The upper electrode 106 and the lower electrode 107
When a forward voltage is applied to the in-diode, recombination of electrons and holes occurs in the quantum well active layer 105, and recombination light emission occurs. The light generated there is the upper DBR
When reciprocating between the mirror 103 and the lower DBR mirror 104, stimulated emission occurs and the light intensity is amplified. When the optical gain exceeds the optical loss, laser oscillation occurs, and laser light is emitted from the upper surface of the lens-shaped portion 54, that is, the convex lens surface in a direction perpendicular to the substrate.

The feature of this embodiment is that the upper surface of the columnar portion 101 and the upper electrode 1 are formed as shown in FIG.
That is, the resin layer 52 is formed so as to cover a part of the resin layer 52. By forming the resin layer 52, the laser element is protected from substances that deteriorate the semiconductor such as oxygen and moisture.

Further, since the lens-shaped portion 54 is formed on the surface of the resin layer 52 located on the columnar portion 101, the laser beam is refracted on the upper surface of the lens-shaped portion 54, that is, on the convex lens surface. , The radiation angle can be narrowed. Further, according to this configuration, since the radiation angle on the laser emission surface can be controlled, the radiation angle can be set small even if the laser emission aperture is increased.

The contact hole 70 is formed in the resin layer 52.
In the case where a metal layer is provided on the resin layer 52, electrical contact between the metal layer and the upper electrode 106 is also possible.

As a method of forming the resin layer 52 having the lens-shaped portion 54 and the contact hole 70 described above,
For example, a method using the stamper 40 can be used.

The method of forming the lens-shaped portions 54 and the contact holes 70 in the resin layer 52 is not particularly limited, but a preferred method is to use, for example, a stamper 40 to integrally form the lens-shaped portions 54 and 54. And a method of forming the contact hole 70. Therefore, in the present embodiment, the surface emitting laser 10
Surface emitting laser 1 using a stamper
00 will be described in detail. Before describing the method of manufacturing the surface emitting laser 100, a method of manufacturing the stamper 40 will be described first.

(Manufacturing Method of Stamper) FIGS. 2 and 3
FIG. 4 is a schematic diagram showing a series of manufacturing steps for manufacturing the stamper 40. Specifically, FIG. 2 is a schematic diagram showing a manufacturing process of a mother die, and FIG. 3 is a schematic diagram showing a process of manufacturing a stamper using the mother die.

In manufacturing the stamper 40, a mother die 14 which is a mother die of the stamper 40 is manufactured. First,
A method for manufacturing the mother mold 14 will be described with reference to FIG.

(1) A photoresist is applied on the silicon substrate 10 having high flatness. Thereafter, the first resist layer R1 having a predetermined pattern is formed as shown in FIG. 2A by patterning the photoresist using a photolithography method.

(2) Next, the first resist layer R1 is heated and reflowed, that is, the molten resist is made to flow and reformed. Thereby, the first resist layer R1 becomes
Under the influence of the surface tension, the surface is deformed into a convex lens shape as shown in FIG. 2B, and the second resist layer R2 is formed. As a heating method, for example, a hot plate or a hot air circulation oven can be used. The heating condition when a hot plate is used varies depending on the material of the resist, but is 150 ° C. or more and 2 to 10 minutes, preferably 5 minutes. In the case of a hot-air circulation oven, the temperature is preferably 160 ° C. or more and 20 to 30 minutes.

(3) Thereafter, the selectivity of silicon to the resist layer (hereinafter referred to as "selectivity") is 0.5 to 1.0.
The second resist layer R by the dry etching method
2 and the silicon substrate 10 are etched to form a convex portion 11 on the silicon substrate 10 as shown in FIG. The convex portion 11 formed here has the shape of the lens-shaped portion 54 of the finally manufactured surface emitting laser. According to this selectivity, in this etching, as shown by the imaginary line in FIG. 2B, the convex lens shape is reflected on the silicon substrate 10 while reflecting the convex lens shape of the second resist layer R2 before performing the etching step. The shape can be transferred. As a result, the convex portion 11 can be formed on the silicon substrate 10. Examples of the etching gas include a gas obtained by mixing oxygen (eg, CF ₄ ) having a high etching property with respect to silicon and oxygen for actively etching the resist layer. By mixing oxygen in this way, the selectivity can be adjusted.

(4) Next, a photoresist is applied on the silicon substrate 10. Thereafter, the third resist layer R3 having a predetermined pattern is formed by patterning the photoresist using a photolithography method, as shown in FIG. 2D. Subsequently, using the third resist layer R3 as a mask, a predetermined position of the silicon substrate 10 is etched to a desired depth to form a hole 12. The hole 12 formed here has the shape of the contact hole 70 of the surface emitting laser 100 to be finally manufactured. This etching is performed using an etching gas having a high selectivity, for example, CF ₄ gas or the like. After the etching, the third resist layer R3 is removed.
In this way, as shown in FIG. 2E, the mother die 14 having the shape of the lens-shaped portion 54 and the contact hole 70 of the finally manufactured surface-emitting laser 100 is completed.

Hereinafter, a method of manufacturing the stamper 40 using the mother mold 14 obtained here will be described with reference to FIG.

(1) As shown in FIG. 3A, a liquid ultraviolet curable resin 30 is placed on the surface of the mother mold 14 having the convex portions 11 and the holes 12.

(2) Then, the first transparent to ultraviolet rays
Is adhered to the mother mold 14 via the liquid ultraviolet curing resin 30. Thus, the first reinforcing plate 2
By bringing the mother mold 14 into close contact with the mother mold 14, the liquid ultraviolet-curable resin 30 is spread to a predetermined area as shown in FIG. 3B, and the mother mold 14 and the first reinforcing plate 2 are spread.
Between 0 and 0, a layer made of the liquid ultraviolet curable resin 30 is formed. Examples of the first reinforcing plate 20 include a plate made of borosilicate glass.

(3) Next, from the first reinforcing plate 20 side,
By irradiating the liquid ultraviolet curable resin 30 with ultraviolet rays 24, the liquid ultraviolet curable resin 30 is cured to form an intermediate plate 32 made of a cured resin layer. Thereafter, as shown in FIG. 3C, the intermediate plate 32 serving as the stamper 40 and the first reinforcing plate 20 are integrally joined to the mother mold 14.
Peel from Hereinafter, the surface of the stamper 40 in contact with the mother mold 14, specifically, the surface of the intermediate plate 32 in contact with the mother mold 14, is referred to as a mold surface 32a. On the mold surface 32a thus obtained, an inverted shape of the shape of the convex portion 11 and the hole 12 of the mother mold 14 is transferred. Hereinafter, the concave portion of the stamper 40 corresponding to the convex portion 11 of the mother die 14 is referred to as a concave portion 34, and the convex portion of the stamper 40 corresponding to the shape of the hole 12 of the mother die 14 is referred to as a convex portion 36. The concave portion 34 has a lens shape portion 54 to be finally manufactured.
And the convex portion 36 becomes an inverted shape portion of the contact hole finally manufactured. The intermediate plate 32 and the first reinforcing plate 20 constituting the stamper 40 are transparent to ultraviolet rays. Therefore, the stamper 40 is transparent to ultraviolet rays.

(4) Next, as shown in FIG.
A surface treatment is performed on the mold surface 32a. This surface treatment is performed so that the adhesiveness between the resin layer 52 and the stamper 40, which will be described later, is lower than the adhesiveness between the resin layer 52 and the semiconductor deposit body 120, that is, the resin layer 52 and the stamper 40, which will be described later. This is for facilitating the peeling in the step of peeling. As the surface treatment, for example, a fluorine treatment using CF ₄ gas plasma can be given. Thus, the stamper 40 is completed.

(Manufacturing Process of Surface Emitting Laser 100) Next, a manufacturing process of the surface emitting laser 100 shown in FIG. 1 will be described. 4 to 7 are schematic views showing the manufacturing process of the surface emitting laser 100.

(1) First, a description will be given with reference to FIG. On an n-type GaAs substrate 109, Al _0.15 Ga _0.85 A
s and AlAs are alternately stacked to form 25 pairs of lower DBR mirrors 104 doped with Se. next,
On the lower DBR mirror 104, a quantum well active layer 105 composed of a GaAs well layer having a thickness of 3 nm and an Al _0.3 Ga _0.7 As barrier layer having a thickness of 3 nm and having three well layers is formed. Furthermore, on the quantum well active layer 105, Al _0.15 Ga _0.85 As and Al _0.9 Ga _0.1 As alternately laminated, top DB 30 pairs doped with Zn
An R mirror 103 is formed. Thereafter, a contact layer 102 made of Al _0.15 Ga _0.85 As is laminated on the upper DBR mirror 103.

Each of the above layers is formed by metal organic chemical vapor deposition (MOV).
PE: Metal-Organic Vapor Pha
It can be epitaxially grown by the (Se Epitaxy) method. At this time, for example, the growth temperature is 750
° C, growth pressure is 2 × 10 ⁴ Pa, and TMG
a (trimethylgallium) and TMAl (trimethylaluminum) organic metals, and AsH ₃ , n
H ₂ Se for p-type dopant and DEZn for p-type dopant
(Dimethylzinc) can be used.

Next, a photoresist is applied on the contact layer 102. Thereafter, the photoresist is patterned by a photolithography method, and a fourth resist layer R4 having a predetermined pattern is formed as shown in FIG.

(2) Next, as shown in FIG. 5, using the fourth resist layer R4 as a mask, the contact layer 102 and the upper DBR mirror 1 are formed by reactive ion etching.
03, quantum well active layer 105 and lower DBR mirror 1
Part of the column 101
To form In this etching, usually, chlorine or chlorine-based gas (hydrogen chloride, BCl ₃ ) is used as an etching gas.
A reactive ion beam etching method is used.

(3) Next, using a SiH ₄ (monosilane) gas and an O ₂ (oxygen) gas, and a normal pressure thermal CVD method using an N ₂ (nitrogen) gas as a carrier gas, a film thickness is formed on the substrate, for example. 100-300 nm silicon oxide film (SiO
_X film). Then, as shown in FIG. 6, the columnar portion 1 is formed by photolithography and dry etching.
The silicon oxide film is removed by etching except for a part of the side surface 01 and a part of the lower DBR mirror 104 to form an insulating layer 108.

Next, a lower electrode 107 in which an Au—Ge alloy, Ni, and Au are sequentially laminated is formed on the lower surface of the substrate 109 by a vacuum evaporation method.

Further, as shown in FIG.
The upper electrode 106 is formed by a lift-off method so that the upper electrode 106 contacts the contact layer 102 in a ring shape on the upper surface and covers the side surface of the columnar portion 101 and the insulating layer 108. Here, for the upper electrode 106, a metal layer in which titanium, platinum, and gold are sequentially stacked is used.

Hereinafter, the layer structure from the lower electrode 107 to the upper electrode 106 including the columnar portion 101 manufactured in the above-described series of steps will be simply referred to as a semiconductor deposited body 120.

(4) Next, a process for forming the resin layer 52 on the semiconductor deposition body 120 will be described. FIG.
4 illustrates a manufacturing process of the resin layer 52. In FIG. 7, the layer structure of the semiconductor stack 120 is omitted, and the semiconductor stack 120 is schematically illustrated.

The back surface of the semiconductor deposition body 120, specifically,
A second reinforcing plate 60 is attached below the lower electrode. Second
By using the reinforcing plate 60, the mechanical strength of the semiconductor deposit body 120 can be increased. This also allows for
In the step of peeling the stamper 40 from the semiconductor deposit body 120, it is possible to prevent the semiconductor deposit body 120 from being destroyed due to strain generated during the peeling. Second reinforcing plate 6
0 is not particularly limited as long as it is flat, but preferably,
A glass plate and the like can be mentioned.

(5) The stamper 4 is positioned so that the concave portion 34 of the stamper 40 is positioned above the columnar portion 101 of the surface emitting laser.
0 and the semiconductor stack 120 are aligned. Examples of the alignment method include the following method.

1) A method in which the stamper 40 and the semiconductor deposit body 120 are separately positioned and bonded with mechanical accuracy.

2) When the stamper 40 is transparent,
The semiconductor deposit body 120 on the side where the columnar portion 101 is formed
A method in which an alignment mark for aiming at the time of alignment is provided on the surface of the above, and alignment is performed using the alignment mark.

3) If the stamper 40 is not transparent,
In a predetermined portion of the stamper 40, the intermediate plate 32 and the first
A method of providing a hole vertically penetrating the stamper 40 with respect to a surface in contact with the reinforcing plate 20, and performing alignment using the above-described alignment mark through the hole.

(6) Stamper 40 and Semiconductor Deposit 120
After the alignment, the resin liquid 50 is introduced between the stamper 40 and the semiconductor deposit body 120, and FIG.
As shown in (1), it is placed on the surface of the semiconductor deposition body 120. After the resin liquid material 50 is placed on the surface of the semiconductor deposit body 120, the stamper 40 and the semiconductor deposit body 120 may be aligned.

As the liquid material 50 of the resin, those which are cured by applying energy are preferable. Since the resin is a liquid, it is easy to fill the concave portion 34 of the stamper 40 with the resin. As the liquid material 50 of the resin,
For example, a precursor of an ultraviolet-curable acrylic resin, an ultraviolet-curable epoxy resin, or a thermosetting polyimide-based resin can be given.

The ultraviolet-curable resin can be easily used because it can be cured only by ultraviolet irradiation. Further, since no heat treatment is applied, there is no need to worry about a trouble caused by a difference in thermal expansion between the stamper 40, the semiconductor stack 120, the second reinforcing plate 60, and the like.

The UV-curable acrylic resin is suitable for a lens because of its high transparency.

The precursor of the thermosetting polyimide resin is
By the heat curing treatment, an imidization reaction occurs and is cured to produce a polyimide resin. Since the polyimide resin has a transmittance of 80% or more in the visible light region and a high refractive index of 1.7 to 1.9, there is an advantage that a large lens effect can be obtained.

The method of introducing the liquid resin material 50 onto the semiconductor deposit body 120 is not particularly limited. For example, the resin liquid material 50 is dropped on the semiconductor deposit body 120 by a dispenser nozzle. Can be introduced.

(7) Next, the stamper 40 and the semiconductor deposition body 120 are brought into close contact with each other via a resin. in this way,
By bringing the stamper 40 and the semiconductor deposit body 120 into close contact with each other, the resin liquid material 50 is spread to a predetermined area as shown in FIG. Is formed. If necessary, the pressure may be applied via at least one of the stamper 40 and the semiconductor deposit body 120 when the stamper 40 and the semiconductor deposit body 120 are bonded to each other. Further, in order to prevent air bubbles from being mixed into the resin layer 52, the stamper 40 and the semiconductor deposition body 120 may be brought into close contact under a vacuum of about 10 Pa.

(8) Subsequently, the liquid resin material 50 is cured. As the curing method, an appropriate method is selected according to the type of the resin liquid material 50. When an ultraviolet-curable resin is used, it can be cured by irradiating the resin liquid 50 with ultraviolet light from the stamper 40 side. When a thermosetting polyimide-based resin precursor is used, it can be cured by heating and curing. The heating cure temperature varies depending on the precursor, for example, 1
00 to 400 ° C. The preferred heating cure temperature is set at a value from the viewpoint of avoiding damage to the device such as a surface emitting laser due to heat, the viewpoint of reducing the difference in thermal expansion between the semiconductor deposit 120 and the polyimide resin, and the fact that the constituent metal of the upper electrode is the resin layer 5.
The temperature is about 150 ° C. from the viewpoint of preventing abnormal diffusion to No. 2.

In this manner, the resin layer 52 having the shape corresponding to the mold surface 32a of the stamper 40 transferred is formed on the semiconductor deposition body 120. That is, a lens-shaped portion 54 is formed in a portion corresponding to the concave portion 34 of the stamper 40,
A contact hole 70 is formed at a portion corresponding to the convex portion 36.

(9) The stamper 40 is peeled off from the resin layer 52 and the semiconductor deposition body 120. At this time, the stamper 40
According to the above-described process, the stamper 40
Has been subjected to a surface treatment to facilitate separation from the resin layer 52. Therefore, the stamper 40 can be easily separated from the resin layer 52 and the semiconductor deposit body 120.

(10) After the stamper 40 is peeled off,
As shown in (c), the contact holes 7 in the resin layer 52 are formed.
The resin may remain at the bottom of the zero. When the resin remains, a metal layer is provided on the resin layer 52, and when it is desired to make electrical contact between the metal layer and the upper electrode 106 via a contact hole, the upper electrode 106 and the metal layer Electrical contact with the battery cannot be achieved sufficiently. Further, when the resin is left at the bottom of the contact hole 70, for example, when wire bonding is directly performed on the upper electrode 106,
There may be a problem that the wire cannot be connected to the upper electrode 106. Further, even if the wire can be connected to the upper electrode 106, there arises a problem that electrical contact between the wire and the upper electrode 106 cannot be sufficiently achieved. Therefore, when the resin remains at the bottom of the contact hole 70, it is desirable to perform one of the following two steps, for example, to remove the remaining resin.

1) First, the contact hole 70 is formed by ashing, that is, a method of removing the resin in the gas phase.
The resin remaining at the bottom of the is removed. Specific examples of ashing include ozone ashing, plasma ashing, and the like. Ozone ashing is a method of removing a resin by chemically reacting ozone with a resist under an atmosphere of high-concentration ozone. Plasma ashing is a method of generating a plasma of a reactive gas, for example, oxygen gas, and removing the resin using the plasma. According to the ashing method, the resin remaining in all the contact holes 70 can be removed, so that there is an advantage that no processing time is required.

2) Second, the bottom of the contact hole 70 is ablated with an excimer laser. That is, a finely focused excimer laser beam is applied to the contact hole 7.
Aim at the bottom of 0 and irradiate the contact hole 7
Burn off the resin at the bottom of 0. According to the excimer laser, since the processing can be performed only on the bottom of the contact hole 70, there is an advantage that there is no need to worry about damage to the lens shape portion 54.

(11) Next, the second reinforcing plate 60 is peeled off, and the surface emitting laser 100 of the present invention as shown in FIG. 1 is completed.

In the above-described manufacturing method, since the lens-shaped portion 54 and the contact hole 70 can be formed integrally using the stamper 40, the lens-shaped portion 54 and the contact hole 70 are formed by photolithography. In comparison with this, it is simple and the time required for manufacturing can be greatly reduced. In addition, once the stamper 40 is created, it can be used again and again, so that the manufacturing cost can be reduced and it is economical.

In the above embodiment, the stamper 40
Is transparent to ultraviolet rays, but is not limited thereto, and may be made of a material that is not transparent to ultraviolet rays, for example, a metal. When the stamper 40 is made of a metal, the stamper 40 can be manufactured using electroforming. That is, a method such that a metal such as nickel is electro-deposited on the mother mold 14 by electroforming and the metal mold 14 is removed from the metal, whereby a metal stamper 40 is obtained.
The production of the stamper 40 using electroforming is simple and easy.
0 has the advantage that it can be manufactured.

When the stamper 40 is manufactured, the stamper 40 may be manufactured directly without using the mother mold 14. That is, the concave portions 34 and the convex portions 36 of the stamper 40 can be formed by using a wet etching method. In this case, as the material of the stamper 40, a metal, a semiconductor substrate (for example, silicon), quartz, glass, or the like can be used in addition to the resin.

When the stamper 40 is made of a material such as a metal or a semiconductor that is difficult to transmit ultraviolet rays, the resin liquid material cannot be an ultraviolet-curable resin, but a thermosetting resin can be used. When a resin, for example, a precursor of the above-described thermosetting polyimide-based resin is used, the same operation and effect as those of the above embodiment can be obtained.

The surface emitting laser according to the present invention is not limited to the structure of the resonator of the above embodiment.

[0077]

[Brief description of the drawings]

FIG. 1 is a cross-sectional view schematically showing a surface emitting laser according to an embodiment of the present invention.

FIG. 2 is a schematic view showing a mother-type manufacturing process.

FIG. 3 is a schematic view showing a step of manufacturing a stamper using a mother die.

FIG. 4 is a schematic view illustrating a manufacturing process of the surface emitting laser according to the embodiment of the present invention.

FIG. 5 is a schematic view illustrating a manufacturing process of the surface emitting laser according to the embodiment of the present invention.

FIG. 6 is a schematic view illustrating a manufacturing process of the surface emitting laser according to the embodiment of the present invention.

FIG. 7 is a schematic view showing a manufacturing process of the surface emitting laser according to the embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 10 silicon substrate 11 convex portion 12 hole 14 mother type 20 first reinforcing plate 24 ultraviolet ray 30 liquid ultraviolet curing resin 32 intermediate plate 32a mold surface 34 concave portion 36 convex portion 40 stamper 50 resin liquid 52 resin layer 54 lens Shaped part 60 Second reinforcing plate 70 Contact hole 101 Column part 102 Contact layer 103 Upper DBR mirror 104 Lower DBR mirror 105 Quantum well active layer 106 Upper electrode 107 Lower electrode 108 Insulating layer 109 Substrate 120 Semiconductor deposit body R1 First resist Layer R2 Second resist layer R3 Third resist layer R4 Fourth resist layer

Claims (5)

[Claims] 1. A surface-emitting type semiconductor laser having a vertical resonator on a semiconductor substrate and emitting laser light from the resonator in a direction perpendicular to the semiconductor substrate, wherein the semiconductor includes the resonator. A surface-emitting type semiconductor laser in which a resin layer is provided on a surface of a deposition body, and a lens-shaped portion is formed on a surface portion of the resin layer located above the resonator. 2. The surface-emitting type semiconductor laser according to claim 1, wherein a contact hole continuous with an electrode is formed at a predetermined position of the resin layer. 3. A method for manufacturing a surface emitting semiconductor laser, comprising the following steps (a) and (b). (A) depositing a plurality of semiconductor layers on a semiconductor substrate to form a semiconductor deposit including a resonator; and (b)
Forming a resin layer using a stamper having an inverted shape of the lens-shaped portion, wherein the stamper is positioned so that the inverted shape is positioned on a resonator of the semiconductor stack. Forming a resin layer by interposing a liquid material of a resin between the semiconductor deposit body and the stamper, and curing the liquid material of the resin;
Forming a lens-shaped portion on a surface portion of the resin layer located on the resonator. 4. The stamper according to claim 3, wherein the stamper is subjected to a surface treatment such that the adhesion between the mold surface and the resin layer is lower than the adhesion between the resin layer and the semiconductor deposit. And a method for manufacturing a surface emitting semiconductor laser. 5. The method for manufacturing a surface-emitting type semiconductor laser according to claim 3, wherein the stamper further has an inverted shape of a contact hole.