CN112289929B - Niobium oxide gate tube - Google Patents

Niobium oxide gate tube Download PDF

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CN112289929B
CN112289929B CN202011127677.3A CN202011127677A CN112289929B CN 112289929 B CN112289929 B CN 112289929B CN 202011127677 A CN202011127677 A CN 202011127677A CN 112289929 B CN112289929 B CN 112289929B
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dielectric layer
magnetron sputtering
power supply
radio frequency
niobium oxide
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CN112289929A (en
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杨高琦
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Hubei University
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Hubei University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Abstract

The invention provides a niobium oxide gate tube comprising a magnesium oxide dielectric layer, belonging to the technical field of memories; the existing gate tube has the problems of crosstalk, low integration level and the like. The gate pipe of the invention comprises: the device comprises a bottom electrode, a magnesium oxide dielectric layer, a niobium oxide functional layer and a top electrode; the gate tube improves the performance, can bear higher low-resistance state current, improves the on-state current density of the device, and is compatible with the mainstream microelectronic processing technology.

Description

Niobium oxide gate tube
Technical Field
The invention relates to a gating pipe fitting, belongs to the technical field of data storage, and particularly relates to a niobium oxide gating pipe comprising a magnesium oxide dielectric layer.
Background
With the rapid development of information network technology and the wide popularization of mobile intelligent terminals, the demand and daily increase of people for data storage in big data era. Currently, charge-based flash memory (flash) is the most common non-volatile storage device. However, with the continuous forward advance of semiconductor technology nodes, flash memories have the disadvantages of slow speed, poor endurance, low density, approaching physical limits and the like. Therefore, it is very necessary to search for new technologies. In order to continue the marching steps of moore's law, many new non-volatile memory technologies based on other memory concepts are receiving wide attention from the scientific and academic circles. At present, the international research on more novel non-volatile memories mainly includes: phase change memory (PRAM), magnetoresistive memory (MRAM), ferroelectric memory (FRAM), and Resistive Random Access Memory (RRAM). The RRAM has a series of outstanding advantages of small unit size, simple device structure, high operation speed, low power consumption, good micro-shrinkage, compatibility with a CMOS (complementary metal oxide semiconductor) process, easy integration and the like, becomes one of the most powerful competitors of the next-generation non-volatile storage technology, and has wide market prospect and development space.
However, the new non-volatile memory has undergone rapid development for more than ten years, but has not yet been applied to large-scale industrialization, and it is essential that the new non-volatile memory still has some key problems to be solved in terms of mechanism, reliability, integration scheme, etc. At present, the development and application of RRAM technology still have bottlenecks, and one of the main disadvantages of such a device structure is that a cross talk phenomenon is caused by leakage currents of adjacent memory cells, i.e. when a target cell in a memory array is read, several cells in adjacent positions form a potential path under the action of voltage division, so that a cross talk current is generated, and a target cell is misread. Although crosstalk can be prevented after the transistor control is added, the occupied space is obviously increased, and the integration with high density is not facilitated.
In order to suppress cross-talk current in the cells while achieving high density integration, it is necessary to integrate separate gating devices in the device. The gate tube therefore becomes an important part of the RRAM integration. In addition to RRAM, gating devices are also used in the integration of other non-volatile memory devices. The gating device comprises a silicon-based gate tube, an oxide barrier gate tube, a threshold switch gate tube, a mixed ion-electron conductor gate tube, a field-assisted nonlinear gate tube and the like. The resistance transition mechanism of the gating device is closely related to the material properties of the constituent devices. Although the range of dielectric materials composing the gating device is very wide, the preparation methods of different materials are different, and each method has the application range.
Wherein the transition metal oxide niobium oxide (NbO)2) Because of their property of transition from insulator to metal (IMT), they have been used in the fields of sensors and various electronic devices, and have attracted considerable attention. In recent years, niobium oxide is widely used in a resistive random access memory as a gating device, and because the niobium oxide gating tube has a high non-linear value and an on-state current density, crosstalk current in an RRAM memory array can be suppressed, so that the crosstalk problem can be overcome. Meanwhile, compared with other gate tubes, the niobium oxide gate tube has the advantages of high operation speed (<2ns), no drift and good thermal stability (>85 deg.C), etc., thereby meeting the requirement of high-density storage.
When the RRAM device is integrated, the leakage current of adjacent memory units can cause crosstalk, however, the use of the self-current limiting device can limit the structure, materials, thickness and the like of the device to a certain extent, and the overall performance of the device is affected. Therefore, a gate tube is generally used to suppress reverse leakage current. However, the on-off ratio of the niobium oxide gate tube is limited (usually <100), which is not enough for the cross array, and adding a new dielectric material is the focus of research in the technology in order to further improve the performance of the niobium oxide gate tube.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a niobium oxide gate tube, which comprises: a bottom electrode, a dielectric layer, a functional layer and a top electrode; the dielectric layer and the functional layer are arranged between the bottom electrode and the top electrode;
the functional layer is a niobium oxide layer; the dielectric layer is a magnesium oxide layer.
Preferably, the niobium oxide gate tube sequentially comprises from bottom to top: the bottom electrode, the dielectric layer, the functional layer and the top electrode.
Preferably, the niobium oxide gate tube sequentially comprises from bottom to top: the bottom electrode, the functional layer, the dielectric layer and the top electrode.
Preferably, the dielectric layer comprises a first dielectric layer and a second dielectric layer;
the niobium oxide gate tube sequentially comprises from bottom to top: the bottom electrode, the first dielectric layer, the functional layer, the second dielectric layer and the top electrode.
Preferably, the bottom electrode is a platinum electrode disposed on a silicon substrate and has an area of 0.16 μm2～1mm2(ii) a The top electrode is a titanium electrode.
The invention also provides a preparation method of the gate tube, which comprises the following steps:
step 1): pretreating the bottom electrode;
step 2): respectively installing a magnesium oxide target, a niobium oxide target and a metal titanium target on magnetron sputtering equipment, and introducing inert gas argon into a vacuum chamber of the equipment;
step 3): preparing the dielectric layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, the temperature is 290-330K, the power is 30-40W, the sputtering time is 20-30 seconds, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 1-5 nm;
step 4): preparing the functional layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, the temperature is 290-330K, the power is 45-55W, the sputtering time is about 40 minutes, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 80-200 nm;
step 5): preparing a top electrode layer: starting the magnetron sputtering direct current power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, temperatureThe temperature is 290-330K, the sputtering time is 30-40 minutes under the condition that the power is about 40W, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 60-200 nm.
Compared with the prior art, the invention at least has the following beneficial effects:
1) the technology adopts magnesium oxide (MgO) as an additional medium layer to add a niobium oxide gate tube for the first time to optimize the performance, and applies the magnesium oxide to the field of gate devices for the first time. The niobium oxide gate tube with magnesium oxide as a dielectric layer is increased to 161 in the original two-digit switch ratio, so that the performance of the gate tube is improved, higher low-resistance state current (10mA) can be borne (figure 5), the on-state current density of the device is improved, and the niobium oxide gate tube is compatible with the mainstream microelectronic processing technology;
2) the magnesium oxide dielectric layer is simple to prepare, the process is stable, the magnesium oxide film is prepared by magnetron sputtering, the film forming is simple, and the stability is good. And the preparation process is pollution-free, stable in material, short in preparation period and low in preparation cost for preparation personnel. The niobium oxide gate tube with the additional medium layer added with magnesium oxide successfully improves the on-off ratio and the on-state current density of the device, has excellent gate performance, provides support for further research on novel RRAM devices, and makes the magnesium oxide become a medium material with great development potential and research value.
Drawings
Fig. 1 is a structural view of a gate device of embodiment 1 of the present invention;
FIG. 2 is a graph showing the results of I-V test of the gating device of embodiment 1 of the present invention;
FIG. 3 is a graph showing the results of I-V testing of a gated device of comparative example 1 in accordance with the present invention;
fig. 4 is a structural view of a gate device of embodiment 2 of the present invention;
fig. 5 is a graph showing the results of the I-V test of the gating device in embodiment 2 of the present invention.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
The niobium oxide gate tube added with the magnesium oxide additional medium layer has the following structure from bottom to top in sequence: a bottom electrode, a lower additional dielectric layer, a functional layer and a top electrode; the preparation method comprises the following steps:
step 1): for platinum bottom electrode (0.16 μm)2～1mm2) Pretreating the silicon substrate;
step 2): respectively installing a magnesium oxide target, a niobium oxide target and a metal titanium target on magnetron sputtering equipment, and introducing inert gas argon into a vacuum chamber of the equipment;
step 3): preparing an additional magnesium oxide dielectric layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, the temperature is 290-330K, the power is 30-40W, the sputtering time is 20-30 seconds, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 1-5 nm;
step 4): preparing a niobium oxide layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, the temperature is 290-330K, the power is 45-55W, the sputtering time is about 40 minutes, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 80-200 nm;
step 5): preparing a top electrode layer: starting the magnetron sputtering direct current power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, 290-330K and 40W or so, the sputtering time is 30-40 minutes, and after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 60-200 nm.
Example 1
The embodiment is a niobium oxide gate tube added with an additional magnesium oxide dielectric layer, and the structure of the niobium oxide gate tube sequentially comprises the following components from bottom to top: the bottom electrode, the lower additional dielectric layer, the functional layer, the top electrode or the bottom electrode, the functional layer, the lower additional dielectric layer and the top electrode; preferably a bottom electrode is used as the electrode,a lower additional dielectric layer, a functional layer, and a top electrode. In the niobium oxide gate tube with the optimized structure, the lower additional dielectric layer is deposited on the bottom electrode before the functional layer, so that the film forming uniformity of the dielectric layer can be ensured, and the niobium oxide gate tube can better play a role. The gating ratio of the gate tube of the preferred structure can be increased to 68. Wherein the bottom electrode is a rectangular silicon dioxide substrate plated with platinum (gold, tungsten) and has an area of 0.64cm2～1cm2(ii) a The additional dielectric layer is a magnesium oxide film, the thickness of the additional dielectric layer is 1-5 nm, the additional dielectric layer is rectangular, the size of the additional dielectric layer is slightly smaller than that of the bottom electrode, and the additional dielectric layer is used for reserving the bottom electrode; the functional layer is a niobium oxide film, the thickness of the functional layer is 80-200 nm, the functional layer is rectangular, and the area of the functional layer is the same as that of the lower additional dielectric layer; magnesium oxide is used as an additional dielectric layer, and the thickness of the additional dielectric layer is 1-5 nm; titanium (titanium nitride, tantalum nitride, ruthenium) is used as the top electrode, the thickness is 60-200 nm, the shape is round or rectangular, the diameter or side length is 100-900 μm, and the structure is shown in figure 1.
The preparation method comprises the following steps:
step 1, cleaning Pt/SiO2Substrate (silicon substrate of platinum bottom electrode)
The method comprises the following steps of firstly, placing a substrate in a mixed solution of cleaning powder and deionized water for ultrasonic cleaning for 15 minutes, secondly, taking out the substrate and placing the substrate in a mixed solution of a hand sanitizer and deionized water for ultrasonic cleaning for 15 minutes, thirdly, taking out the substrate and placing the substrate in acetone for ultrasonic cleaning for 15 minutes, and fourthly, placing the substrate in an ethanol solution for ultrasonic cleaning for 15 minutes;
step 2. treating the substrate
And drying the cleaned substrate, and attaching an insulating adhesive tape to the edge of the substrate to form a reserved bottom electrode.
Step 3, preparing a lower additional dielectric layer
Respectively installing a magnesium oxide target, a niobium oxide target and a metal titanium target on magnetron sputtering equipment, and introducing inert gas argon into a vacuum chamber of the equipment;
preparing an additional magnesium oxide dielectric layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, temperature 290-330K, powerUnder the condition of 30-40W, the sputtering time is 20-30 seconds, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 1-5 nm;
the method specifically comprises the following steps: and preparing the magnesium oxide film on the processed substrate by using a magnetron sputtering technology. The substrate is placed in a magnetron sputtering device, and radio frequency sputtering is adopted, the power is about 30W, the gas flow is 40sccm, and the time is 20-30 seconds.
Step 4. preparing functional layer
Preparing a niobium oxide layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, the temperature is 290-330K, the power is 45-55W, the sputtering time is about 40 minutes, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 80-200 nm;
the method specifically comprises the following steps: and (3) placing the substrate in a magnetron sputtering device, and preparing the niobium oxide film by adopting radio frequency sputtering, wherein the power is about 45W, the gas flow is 40sccm, and the time is 30-40 minutes.
Step 5, preparing a top electrode
Starting the magnetron sputtering direct current power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1～6×10-1Pa, 290-330K and 40W or so, the sputtering time is 30-40 minutes, and after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 60-200 nm.
The method specifically comprises the following steps: the top electrode was prepared using magnetron sputtering techniques. Covering the surface of the substrate with a mask plate, placing the substrate in a magnetron sputtering device, and preparing a Ti electrode with the thickness of 60-200 nm and the diameter of 100-900 microns by adopting a direct-current magnetron sputtering method, wherein the power is about 40W, the gas flow is 40sccm, and the time is 30-40 minutes.
Comparative example 1
The niobium oxide gate tube in the comparative example 1 is the same as the gate tube in the example l in both the structure and the preparation method, and the difference is only that the niobium oxide gate tube in the comparative example 1 does not contain the additional magnesium oxide dielectric layer, that is, the niobium oxide gate tube in the comparative example sequentially only comprises the bottom electrode layer, the functional layer and the top electrode layer from bottom to top, and the others are the same as the example l.
And (3) performance testing:
the performance test of the niobium oxide gate tube containing the additional magnesium oxide dielectric layer prepared in example 1 and the performance test of the niobium oxide gate tube prepared in comparative example 1 were performed respectively, and an agilent B1500A semiconductor parameter analyzer was used for the test. The device is first placed in a probe station with two probes contacting the bottom and top electrodes of the device, respectively. Applying a DC scanning voltage of-1.5V to the top electrode, grounding the bottom electrode, and measuring an I-V curve. One scan voltage cycle includes four parts: scanning from 0 to +1.5V, then from +1.5V to 0, then scanning in reverse direction, from 0 to-1.5V, then from-1.5V to 0, and then completing a scanning period, wherein the number of scanning steps of each part is the same. To prevent excessive current during testing from breaking down the device, a limiting current (CC) is set during forward and reverse scanning. FIG. 2 is a graph showing the I-V test results of the niobium oxide gate tube containing the additional dielectric layer of magnesium oxide prepared in example 1. FIG. 3 is a graph showing the results of the I-V test of the gate tube obtained in comparative example 1. From the performance pair of the gate tube prepared in the embodiment 1 and the niobium oxide gate tube prepared in the comparative example 1, the current limiting of the device after adding the magnesium oxide additional dielectric layer can reach 10mA, and a larger gate ratio is obtained and is increased from 33 to 68. This is because the magnesium oxide film forms a tunnel barrier equivalent to the series resistance at low voltage.
Example 2
In this embodiment 2, the niobium oxide gate tube with the additional upper and lower magnesium oxide dielectric layers is added, the gate ratio can reach 161, and the structure thereof is from bottom to top: the structure comprises a bottom electrode, a lower additional dielectric layer, a functional layer, an upper additional dielectric layer and a top electrode. Wherein the bottom electrode is a rectangular silicon dioxide substrate plated with platinum (gold, tungsten) and has an area of 0.64cm2～1cm2(ii) a The lower additional dielectric layer is a magnesium oxide film, the thickness of the magnesium oxide film is 1-5 nm, the magnesium oxide film is rectangular, the size of the magnesium oxide film is slightly smaller than that of the bottom electrode, the magnesium oxide film is used for reserving the bottom electrode, and the area of the magnesium oxide film is 0.48cm2～0.8cm2(ii) a The functional layer is a niobium oxide film, the thickness of the functional layer is 80-200 nm, the functional layer is rectangular, and the area of the functional layer is the same as that of the lower additional dielectric layer; the upper additional dielectric layer is a magnesium oxide film with a thickness of 1-5 nm,the shape is rectangular, and the area of the rectangular is the same as that of the lower additional dielectric layer and the functional layer; the top electrode is made of metal titanium (titanium nitride, tantalum nitride, ruthenium), has a thickness of 60-200 nm, is round or rectangular, has a diameter or side length of 100-900 μm, and has a structure shown in FIG. 4.
The preparation method comprises the following steps:
step 1, cleaning a Pt/SiO2 substrate
The method comprises the following steps of firstly, placing a substrate in a mixed solution of cleaning powder and deionized water for ultrasonic cleaning for 15 minutes, secondly, taking out the substrate and placing the substrate in a mixed solution of a hand sanitizer and deionized water for ultrasonic cleaning for 15 minutes, thirdly, taking out the substrate and placing the substrate in acetone for ultrasonic cleaning for 15 minutes, and fourthly, placing the substrate in an ethanol solution for ultrasonic cleaning for 15 minutes;
step 2. treating the substrate
Drying the cleaned substrate, and attaching an insulating tape to the edge of the substrate to form a reserved bottom electrode
Step 3, preparing a lower additional dielectric layer
And preparing the magnesium oxide film on the processed substrate by using a magnetron sputtering technology. The substrate is placed in a magnetron sputtering device, and radio frequency sputtering is adopted, the power is about 40W, the gas flow is 40sccm, and the time is 20-30 seconds.
Step 4. preparing functional layer
And (3) placing the substrate in a magnetron sputtering device, and preparing the niobium oxide film by adopting radio frequency sputtering, wherein the power is about 55W, the gas flow is 40sccm, and the time is 30-40 minutes.
Step 5, preparing an upper additional dielectric layer
The substrate is placed in a magnetron sputtering device, and the magnesium oxide film is prepared by adopting radio frequency sputtering, wherein the power is about 40W, the gas flow is 40sccm, and the time is 20-30 seconds.
Step 6, preparing a top electrode
The top electrode was prepared using magnetron sputtering techniques. Covering the surface of the substrate with a mask plate, placing the substrate in a magnetron sputtering device, and preparing a Ti electrode with the thickness of 60-200 nm and the diameter of 100-900 microns by adopting a direct-current magnetron sputtering method, wherein the power is about 40W, the gas flow is 40sccm, and the time is 30-40 minutes.
And (3) performance testing:
the niobium oxide gate tube containing the additional magnesium oxide dielectric layer prepared in example 2 was subjected to a performance test using an agilent B1500A semiconductor parameter analyzer. The device is first placed in a probe station with two probes contacting the bottom and top electrodes of the device, respectively. Applying a DC scanning voltage of-1.5V to the top electrode, grounding the bottom electrode, and measuring an I-V curve. One scan voltage cycle includes four parts: scanning from 0 to +1.5V, then from +1.5V to 0, then scanning in reverse direction, from 0 to-1.5V, then from-1.5V to 0, and then completing a scanning period, wherein the number of scanning steps of each part is the same. To prevent excessive current during testing from breaking down the device, a limiting current (CC) is set during forward and reverse scanning. FIG. 5 is a graph showing the I-V test results of the niobium oxide gate tube containing upper and lower magnesium oxide additional dielectric layers prepared in example 2. By comparing the performance of the gate device prepared in example 1 and comparative example 1, it can be seen that the current limiting of the device after adding the upper and lower magnesium oxide additional dielectric layers can reach 10mA, and meanwhile, the gate ratio is further improved to 161 compared with example 1 and comparative example 1. This is because the niobium oxide gate tube is equivalent to 2 resistors connected in series under low voltage after the niobium oxide gate tube is inserted into the double-layer magnesium oxide additional dielectric layer.
Has the advantages that:
(1) the invention adopts magnesium oxide as the material of the forehead medium layer, the material has simple components and stable performance, and the introduction of the material leads the gate tube prepared by the invention to have higher gating ratio, high on-state current density and stable electrical performance
(2) The current limiting of the niobium oxide gate tube (such as example 1 and example 2) introduced with the magnesium oxide additional dielectric layer is improved from 1mA to 10mA, and meanwhile, the low-resistance current can be kept unchanged (such as shown in figures 2 and 5);
(3) the gating ratio of the novel magnesium oxide extra medium layer gate tube is obviously improved, an extra medium layer is inserted to form a layer, the gating ratio is improved to 68, a double-layer extra medium layer is inserted to form a layer, and the gating ratio is improved to 161 (shown in figures 2 and 5).
(4) The novel magnesium oxide extra dielectric layer gate tube with high flux ratio is the key for inhibiting the problem of 1S1R integration leakage current, and the invention improves the high-performance gate tube for 1S1R integration.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.

Claims (3)

1. A preparation method of a niobium oxide gating device comprises the following steps in sequence from bottom to top: the device comprises a bottom electrode, a first dielectric layer, a functional layer, a second dielectric layer and a top electrode; the functional layer is a niobium oxide layer; the first dielectric layer and the second dielectric layer are magnesium oxide layers, and the magnesium oxide layers are used as tunneling layers in the gating device, and the gating device is characterized in that: the preparation method comprises the following steps:
step 1): pretreating the bottom electrode;
step 2): respectively installing a magnesium oxide target, a niobium oxide target and a metal titanium target on magnetron sputtering equipment, and introducing inert gas argon into a vacuum chamber of the equipment;
step 3): preparing the first dielectric layer: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1 ~6×10-1 Pa, the temperature is 290-330K, the power is 30-40W, the sputtering time is 20-30 seconds, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 1-5 nm;
step 4): preparation methodThe functional layer is as follows: starting the magnetron sputtering radio frequency power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1 ~6×10-1 Pa, the temperature is 290-330K, the power is 45-55W, the sputtering time is about 40 minutes, after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 80-200 nm;
step 5): preparing the second dielectric layer: starting a magnetron sputtering radio frequency power supply, controlling the system pressure in the vacuum chamber to be 2 x 10 < -1 > to 6 x 10 < -1 > Pa, the temperature to be 290-330K, and the power to be 30-40W, wherein the sputtering time is 20-30 seconds, and after the deposition is finished, closing the magnetron sputtering radio frequency power supply, wherein the thickness of the film is 1-5 nm;
step 6): preparing a top electrode layer: starting the magnetron sputtering direct current power supply, and controlling the system pressure in the vacuum chamber to be 2 multiplied by 10-1 ~6×10-1 Pa, 290-330K and 40W or so, the sputtering time is 30-40 minutes, and after the deposition is finished, the magnetron sputtering radio frequency power supply is closed, and the thickness of the film is 60-200 nm.
2. The method of claim 1, wherein: the bottom electrode is a platinum electrode arranged on a silicon dioxide substrate and has an area of 0.16 μm2~1mm2(ii) a The top electrode is a titanium electrode.
3. The method of claim 1, wherein: the shapes of the first dielectric layer and the second dielectric layer are the same as the shape of the bottom electrode.
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