CN112289923B - Magnetic tunnel junction structure of magnetic random access memory - Google Patents
Magnetic tunnel junction structure of magnetic random access memory Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Mram Or Spin Memory Techniques (AREA)
Abstract
The utility model provides a magnetic tunnel junction structure of magnetic random access memory, magnetic tunnel junction structure includes two-layer lattice conversion layer, realizes having the anti-ferromagnetic layer of face-centered cubic crystal structure to having lattice conversion and strong ferromagnetic coupling between the reference layer is piled up to the body-centered cube, is favorable to magnetic tunnel junction unit in magnetism, electricity and the promotion of yield and the microminiaturization of device.
Description
Technical Field
The invention relates to the technical field of memories, in particular to a magnetic tunnel junction structure of a magnetic random access memory.
Background
Magnetic random access memory (Magnetic random access memory, MRAM) has, in a magnetic tunnel junction (Magnetic tunnel junction; MTJ) with perpendicular anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, two magnetization directions in the perpendicular direction, namely: up and down, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or being empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be inverted 180 degrees in the vertical direction. The ability of the free Layer magnetization direction of the mram to remain unchanged is called Data Retention (Data Retention) or thermal stability (Thermal Stability), which is different in different applications, and for a typical Non-volatile Memory (NVM), the Data Retention is required to be able to store Data for 10 years under the condition of 125 ℃, and the Data Retention or thermal stability is reduced during external magnetic field flipping, thermal perturbation, current perturbation or multiple operations, so that the pinning of the Reference Layer (RL) is often implemented by using an antiferromagnetic Layer (Synthetic Anti-Ferrimagnet Layer, syAF) superlattice. Current manufacturers use various techniques to achieve lattice matching of the antiferromagnetic layer to the reference layer, but the "antiferromagnetic coupling" situation still occurs.
Disclosure of Invention
In order to solve the above technical problems, an object of the present application is to provide a magnetic tunnel junction structure of a magnetic random access memory, which realizes reference layer pinning, lattice conversion, and reduces/avoids the situation of "demagnetizing magnetic coupling".
The aim and the technical problems of the application are achieved by adopting the following technical scheme.
According to a magnetic tunnel junction structure of a magnetic random access memory provided in the present application, the magnetic tunnel junction structure includes, from top to bottom, a Free Layer (FL), a barrier Layer (Tunneling Barrier Layer, TBL), a Reference Layer (RL), a lattice conversion Layer (Crystal Transfer Layer, CTL), an antiferromagnetic Layer (SyAF) and a Seed Layer (Seed Layer; SL), wherein the lattice conversion Layer includes: a first conversion sub-layer, i.e., a discontinuous barrier layer, formed of a low electronegativity material, or an oxide thereof, or a nitride thereof, or an oxynitride thereof, having a thickness insufficient to form a continuous atomic layer; and a second conversion sublayer, namely a body-centered lattice promoting layer, disposed on the first conversion sublayer, formed of a transition metal having a body-centered crystal structure with high electronegativity; wherein the magnetic tunnel junction comprises two lattice-switching sublayers that perform lattice switching and strong ferromagnetic coupling between the antiferromagnetic layer and the reference layer.
The technical problem of the application can be further solved by adopting the following technical measures.
In an embodiment of the present application, the low electronegativity material of the first conversion sublayer is X, XY, XZ or XYZ, wherein X is one or a combination of rare earth elements selected from calcium, scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, aluminum, lanthanide rare earth elements, actinide rare earth elements; y is nitrogen, Z is oxygen, and the thickness of the first conversion sub-layer is not more than 0.15 nm.
In an embodiment of the present application, the material of the first conversion sub-layer is one of tantalum, zirconium, hafnium and niobium, and the thickness of the first conversion sub-layer is not greater than 0.10nm, preferably between 0.05 and 0.08 nm.
In an embodiment of the present application, the material of the second conversion sub-layer is one selected from tungsten, molybdenum, rhenium, technetium and chromium, and the thickness of the second conversion sub-layer is between 0.1 nm and 0.5 nm.
In an embodiment of the present application, a Capping Layer (CL) may be disposed on the free Layer, where a material of the Capping Layer is a double Layer structure selected from (one of magnesium, magnesium oxide, magnesium zinc oxide, magnesium boron oxide, and magnesium aluminum oxide)/(one of tungsten, molybdenum, magnesium, niobium, ruthenium, hafnium, vanadium, chromium, and platinum), a triple Layer structure of magnesium oxide/(one of tungsten, molybdenum, and hafnium)/ruthenium, or a four-Layer structure of magnesium oxide/platinum/(one of tungsten, molybdenum, and hafnium)/ruthenium.
In an embodiment of the present application, the material of the free layer is a single-layer structure selected from cobalt boride, iron boride, cobalt-iron-boron, or a double-layer structure of cobalt boride/cobalt-iron-boron, or cobalt-iron-boron/(tantalum, tungsten, molybdenum, or hafnium)/cobalt-iron-boron, or a three-layer structure of cobalt-iron-boron/(tungsten, molybdenum, or hafnium)/cobalt-iron-boron, or iron/cobalt-iron-boron/(tungsten, molybdenum, or hafnium)/cobalt-iron-boron, or one of four-layer structures of cobalt-iron-boron/(tungsten, molybdenum, or hafnium)/cobalt-iron-boron, and the thickness of the free layer is between 1.2 nm and 3.0 nm.
In an embodiment of the present application, the material of the barrier layer is one selected from magnesium oxide, magnesium zinc oxide, magnesium boron oxide or magnesium aluminum oxide, and the thickness of the barrier layer is between 0.6 nm and 1.5 nm.
In an embodiment of the present application, the material of the reference layer is selected from one or a combination of cobalt, iron, nickel, iron-cobalt alloy, cobalt boride, iron boride, cobalt-iron-boron alloy, cobalt-iron-carbon alloy and cobalt-iron-boron-carbon alloy, and the thickness of the reference layer is between 0.5nm and 2.0 nm.
In one embodiment of the present application, the antiferromagnetic layer of the magnetic tunnel junction is a multi-layer structure of [ cobalt/(palladium, platinum or nickel) ] ncobalt/(ruthenium, iridium or rhodium)/cobalt [ (palladium, platinum or nickel)/cobalt ] m, wherein n is greater than or equal to 1, m is greater than or equal to 0, and the thickness of a single layer of cobalt, palladium, platinum, nickel, ruthenium, iridium or rhodium is less than 1.0 nm.
In an embodiment of the present application, the material of the seed layer of the magnetic tunnel junction is one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, palladium, chromium, oxygen, nitrogen, chromium cobalt, chromium nickel, cobalt boride, iron boride, cobalt iron boron, or the like, or one of the multi-layer structures selected from cobalt iron boron/tantalum/platinum, tantalum/ruthenium, tantalum/platinum/ruthenium, cobalt iron boron/tantalum/platinum/ruthenium, or the like.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction to cause the reference layer and the free layer to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the template of a face-centered cubic crystal structure barrier layer.
The magnetic tunnel junction unit structure with the two layers of lattice conversion layers can realize lattice conversion and strong ferromagnetic coupling between an antiferromagnetic layer with a face-centered cubic crystal structure and a reference layer with a body-centered cubic stack, and is favorable for improvement of magnetism, electricity and yield of the magnetic tunnel junction unit and miniaturization of devices.
Drawings
FIG. 1 is a schematic diagram of a magnetic memory cell of a magnetic random access memory according to an embodiment of the present application;
fig. 2 is a schematic diagram of a multi-layer conversion layer structure of a lattice conversion layer according to an embodiment of the present application.
Symbol description
10, a bottom electrode, 20, a magnetic tunnel junction, 21, a seed layer; an antiferromagnetic layer 22; a lattice conversion layer 23; 24, a reference layer; 25, a barrier layer; 26, a free layer; a cover layer 27; 30, a top electrode; 231 a first conversion sublayer; a second conversion sublayer 232;
Detailed Description
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the invention may be practiced. The terms of directions used in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., refer only to the directions of the attached drawings. Accordingly, directional terminology is used to describe and understand the invention and is not limiting of the invention.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, like structural elements are denoted by like reference numerals. In addition, for the sake of understanding and convenience of description, the size and thickness of each component shown in the drawings are arbitrarily shown, but the present invention is not limited thereto.
In the drawings, the scope of the arrangement of devices, systems, components, circuits, etc. is exaggerated for clarity, understanding, and convenience of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprising" will be understood to mean comprising the recited component, but not excluding any other components. Further, in the specification, "above" means above or below the target assembly, and does not mean necessarily on top based on the direction of gravity.
In order to further describe the technical means and effects adopted for achieving the preset aim of the present invention, the following description refers to the specific structure, the characteristics and the effects of a magnetic tunnel junction structure of a magnetic random access memory according to the present invention with reference to the accompanying drawings and the specific embodiments.
FIG. 1 is a schematic diagram of a magnetic memory cell of an embodiment of the present application. Fig. 2 is a schematic diagram of a two-layer lattice conversion layer of a magnetic tunnel junction cell structure according to an embodiment of the present application. The magnetic memory cell structure comprises at least a multilayer structure formed by a bottom electrode 10, a magnetic tunnel junction 20 and a top electrode 30. The magnetic tunnel junction 20 includes, from top to bottom, a Free Layer (FL) 26, a barrier Layer (Tunneling Barrier Layer, TBL) 25, a Reference Layer (RL) 24, a lattice conversion Layer (Crystal Transfer Layer, CTL) 23, an antiferromagnetic Layer (Synthetic Anti-FerrimagnetLayer, syAF) 22, and a Seed Layer (BL) 21 (also referred to as Buffer Layer, BL).
In an embodiment of the present application, the lattice conversion layer 23 is a stacked multi-layer structure, and is regarded as a first conversion sub-layer 231 and a second conversion sub-layer 232 from bottom to top.
In some embodiments, the first conversion sub-layer 231, i.e., the discontinuous barrier layer, is formed of a low electronegativity material, or an oxide thereof, or a nitride thereof, or an oxynitride thereof, and is not thick enough to form a continuous atomic layer; the second conversion sublayer 232, i.e., the body-centered lattice promoting layer, is disposed on the first conversion sublayer and is formed of a transition metal having high electronegativity and having a body-centered crystal structure.
In some embodiments, antiferromagnetic layer 22 is a face centered cubic crystal structure and interfaces with the first switching sublayer 231; the reference layer 24 is of a body centered cubic lattice structure and is contiguous with the second conversion sublayer 232.
In some embodiments, the magnetic tunnel junction 20 includes two lattice-switching sublayers that perform lattice switching and strong ferromagnetic coupling between the antiferromagnetic layer 22 and the reference layer 24 during the read or write operation of the magnetic random access memory cell.
In an embodiment of the present application, the material of the first conversion sub-layer 231 is X, XY, XZ or XYZ, where X may be selected from one or a combination of magnesium (Mg), calcium (Ca), scandium (Sc), yttrium (Y), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), aluminum (Al), manganese (Mn), ruthenium (Ru), iridium (Ir), osmium (Os), zinc (Zn), gallium (Ga), indium (In), carbon (C), silicon (Si), germanium (Ge), tin (Sn), lanthanoid rare earth elements, actinoid rare earth elements, Y is nitrogen (N), Z is oxygen (O), and the thickness of the second conversion sub-layer 232 is not greater than 0.15 nm.
In an embodiment of the present application, the material of the first conversion sub-layer 231 is one of tantalum (Ta), zirconium (Zr), hafnium (Hf) and niobium (Nb), and the thickness of the first conversion sub-layer 231 is not greater than 0.10nm, preferably between 0.05 and 0.08 nm.
In an embodiment of the present application, the material of the second conversion sublayer 232 may be selected from one of metals such as tungsten (W), molybdenum (Mo), rhenium (Re), technetium (Tc) and chromium (Cr), and the thickness of the second conversion sublayer 232 is between 0.1 nm and 0.5 nm.
In an embodiment of the present application, the material of the seed layer 21 of the magnetic tunnel junction 20 is one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, palladium, chromium, oxygen, nitrogen, chromium cobalt, chromium nickel, cobalt boride, iron boride, cobalt iron boron, and the like. In some embodiments, the seed layer 21 may be selected from one of cobalt-iron-boron/tantalum/platinum, tantalum/ruthenium, tantalum/platinum/ruthenium, cobalt-iron-boron/tantalum/platinum/ruthenium, etc. to optimize the crystal structure formed by the antiferromagnetic layer (SyAF) 22.
In an embodiment of the present application, the antiferromagnetic layer 22 of the magnetic tunnel junction 20 is a multi-layer structure of [ cobalt/(palladium, platinum or nickel) ] ncobalt/(ruthenium, iridium or rhodium)/cobalt [ (palladium, platinum or nickel)/cobalt ] m, wherein m is greater than or equal to 0, and the thickness of a single layer of cobalt, palladium, platinum, nickel, ruthenium, iridium or rhodium is less than 1.0 nm. In some embodiments, a monolayer of any of cobalt, palladium, platinum, nickel, ruthenium, iridium, or rhodium may be formed to a thickness below 0.5nm, such as: 0.10nm,0.15nm,0.20nm,0.25nm,0.30nm,0.35nm,0.40nm,0.45nm or 0.50nm, etc., but are not limited thereto, as determined by design requirements.
In an embodiment of the present application, the material of the reference layer 24 of the magnetic tunnel junction 20 is selected from one or a combination of cobalt, iron, nickel, iron-cobalt alloy, cobalt boride, iron boride, cobalt-iron-boron alloy, cobalt-iron-carbon alloy and cobalt-iron-boron-carbon alloy, and has a thickness of 0.5nm to 2.0 nm.
In an embodiment of the present application, the material of the barrier layer 25 of the magnetic tunnel junction 20 is a non-magnetic metal oxide, which is one of magnesium oxide, magnesium zinc oxide, magnesium boron oxide or magnesium aluminum oxide, and has a thickness of 0.6 nm to 1.5 nm.
In an embodiment of the present application, the free layer 26 of the magnetic tunnel junction has a variable magnetic polarization characteristic, and the material of the free layer 26 is selected from a single-layer structure of cobalt boride, iron boride, cobalt-iron-boron, or the like, or a four-layer structure of cobalt-iron-boron/(tantalum, tungsten, molybdenum, or hafnium, or the like)/cobalt-iron-boron, cobalt-iron-boron/(tungsten, molybdenum, or hafnium, or the like)/cobalt-iron-boron, or the like, or a three-layer structure of iron/cobalt-iron-boron/(tungsten, molybdenum, or hafnium, or the like)/cobalt-iron-boron, or the like, or the material of the cobalt-iron-boron/(tungsten, molybdenum, or hafnium, or the like)/cobalt-iron-boron, or the material of the like, and the thickness thereof is 1.2 nm to 3.0 nm.
In an embodiment of the present application, a Capping Layer (CL) 27 may be disposed on the free Layer 26, where the material of the Capping Layer 27 is a double Layer structure selected from (one of magnesium, magnesium oxide, magnesium zinc oxide, magnesium boron oxide, or magnesium aluminum oxide)/(one of tungsten, molybdenum, magnesium, niobium, ruthenium, hafnium, vanadium, chromium, or platinum, etc.), a three Layer structure of magnesium oxide/(tungsten, molybdenum, or hafnium)/ruthenium, or a four Layer structure of magnesium oxide/platinum/(one of tungsten, molybdenum, or hafnium)/ruthenium. In some embodiments, the choice of magnesium oxide (MgO) can provide an additional source of interfacial anisotropy for the Free Layer (FL) 26, thereby increasing thermal stability.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction 20 at a temperature between 350 ℃ and 400 ℃ to cause the reference layer 24 and the free layer 26 to be transformed from an amorphous structure to a body-centered cubic stacked crystal structure by the template of a sodium chloride (NaCl) type-centered cubic crystal structure barrier layer 25.
Another object of the present application is to provide a mram architecture, including a plurality of memory cells, each memory cell being disposed at a location where a bit line and a word line intersect, each memory cell comprising: a magnetic tunnel junction 20 as any one of the preceding; a bottom electrode located below the magnetic tunnel junction 20; and a top electrode located above the magnetic tunnel junction 20.
In one embodiment of the present application, the bottom electrode 10, the magnetic tunnel junction 20, and the top electrode 30 are all completed using a physical vapor deposition process.
In an embodiment of the present application, the material of the bottom electrode 10 is one or a combination of titanium, titanium nitride, tantalum nitride, ruthenium, tungsten nitride, and the like.
In an embodiment of the present application, the material of the top electrode 30 is one or a combination of titanium, titanium nitride, tantalum nitride, tungsten nitride, and the like.
In some embodiments, the bottom electrode 10 is planarized after deposition modeling to achieve surface flatness for fabricating the magnetic tunnel junction 20.
In an embodiment of the present application, the first conversion sublayer 231 may be completed in a PVD deposition process chamber.
The first switching sublayer 231 mainly serves to interrupt the lattice growth of the antiferromagnetic layer 22, and the second switching sublayer 232 mainly serves to achieve lattice transition and magnet coupling between the antiferromagnetic layer 22 and the reference layer 24. However, the second switching sublayer 232, if deposited too thick, tends to cause "demagnetizing coupling" between the antiferromagnetic layer 22 and the reference layer 24.
The magnetic tunnel junction unit structure with the two lattice conversion layers can realize lattice conversion and ferromagnetic coupling between an antiferromagnetic layer with a face-centered cubic crystal structure and a reference layer with a body-centered cubic stack, and is favorable for improvement of magnetism, electricity and yield and miniaturization of devices.
The terms "in an embodiment" and "in various embodiments" and the like are used repeatedly. This phrase generally does not refer to the same embodiment; but it may also refer to the same embodiment. The terms "comprising," "having," "including," and the like are synonymous, unless the context clearly dictates otherwise.
The foregoing description is only illustrative of the present application and is not intended to be limiting, since the present application is described in terms of specific embodiments, but rather is not intended to be limited to the details of the embodiments disclosed herein, and any and all modifications, equivalent to the above-described embodiments, may be made without departing from the scope of the present application, as long as the equivalent changes and modifications are within the scope of the present application.
Claims (7)
1. A magnetic tunnel junction structure of a magnetic random access memory, disposed in a magnetic random access memory cell, the magnetic tunnel junction comprising, from top to bottom, a free layer, a barrier layer, a reference layer, a lattice conversion layer, an antiferromagnetic layer and a seed layer, wherein the lattice conversion layer comprises:
a first conversion sub-layer, i.e., a discontinuous barrier layer, formed of a low electronegativity material, or an oxide thereof, or a nitride thereof, or an oxynitride thereof, having a thickness insufficient to form a continuous atomic layer; and
a second conversion sublayer, namely, a body centered lattice promoting layer, disposed on the first conversion sublayer, formed of a transition metal having high electronegativity and having a body centered crystal structure;
wherein the magnetic tunnel junction comprises two lattice-switching sublayers that perform lattice switching and strong ferromagnetic coupling between the antiferromagnetic layer and the reference layer;
the material of the first conversion sub-layer is one of tantalum, zirconium, hafnium and niobium, and the thickness of the first conversion sub-layer is between 0.05 and 0.08 nanometers; the second conversion sub-layer is made of one of tungsten, molybdenum, rhenium, technetium and chromium, and the thickness of the second conversion sub-layer is between 0.1 nm and 0.15 nm.
2. The magnetic tunnel junction structure of claim 1 wherein a capping layer is disposed on the free layer, the capping layer being made of a material selected from the group consisting of (one of magnesium, magnesium oxide, magnesium zinc oxide, magnesium boron oxide, and magnesium aluminum oxide)/(one of tungsten, molybdenum, magnesium, niobium, ruthenium, hafnium, vanadium, chromium, and platinum), or a three-layer structure of magnesium oxide/(one of tungsten, molybdenum, or hafnium)/ruthenium, or a four-layer structure of magnesium oxide/platinum/(one of tungsten, molybdenum, or hafnium)/ruthenium.
3. The magnetic tunnel junction structure of claim 1 wherein the free layer is made of a material selected from the group consisting of cobalt boride, iron boride, cobalt-iron-boron single layer structure, or cobalt-iron/cobalt-iron-boron double layer structure, or cobalt-iron-boron/(tantalum, one of tungsten, molybdenum or hafnium)/cobalt-iron-boron three layer structure, or one of iron/cobalt-iron-boron/(tungsten, molybdenum or hafnium)/cobalt-iron-boron four layer structure, and the free layer has a thickness of 1.2 nm to 3.0 nm.
4. The magnetic tunnel junction structure of claim 1 wherein the barrier layer is made of a material selected from the group consisting of magnesium oxide, magnesium zinc oxide, magnesium boron oxide and magnesium aluminum oxide, and has a thickness of between 0.6 nm and 1.5 nm.
5. The magnetic tunnel junction structure of claim 1 wherein a material of a reference layer of the magnetic tunnel junction is one selected from the group consisting of cobalt, iron, nickel, iron-cobalt alloy, cobalt boride, iron boride, cobalt-iron-boron alloy, cobalt-iron-carbon alloy and cobalt-iron-boron-carbon alloy, and wherein a thickness of the reference layer is between 0.5nm and 2.0 nm.
6. The magnetic tunnel junction structure of claim 1 wherein the antiferromagnetic layer of the magnetic tunnel junction is a multi-layer structure of [ cobalt/(palladium, platinum, or nickel) ] ncobalt/(ruthenium, iridium, or rhodium)/cobalt [ (palladium, platinum, or nickel)/cobalt ] m, wherein n is 1, m is 0, and the thickness of the single layer of cobalt, palladium, platinum, nickel, ruthenium, iridium, or rhodium is less than 1.0 nm.
7. The magnetic tunnel junction structure of claim 1 wherein the seed layer of the magnetic tunnel junction is of a material selected from the group consisting of titanium, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, palladium, chromium cobalt, chromium nickel, cobalt boride, iron boride, cobalt iron boron, or one of a plurality of layers selected from the group consisting of cobalt iron boron/tantalum/platinum, tantalum/ruthenium, tantalum/platinum/ruthenium, cobalt iron boron/tantalum/platinum/ruthenium.
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Citations (3)
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|---|---|---|---|---|
| CN108232003A (en) * | 2016-12-21 | 2018-06-29 | 上海磁宇信息科技有限公司 | A kind of vertical-type magnetoresistive element and its manufacturing method |
| CN109524540A (en) * | 2017-09-20 | 2019-03-26 | Imec 非营利协会 | Magnetic texure, magnetic tunnel device and magnetic RAM for magnetic tunnel device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109524540A (en) * | 2017-09-20 | 2019-03-26 | Imec 非营利协会 | Magnetic texure, magnetic tunnel device and magnetic RAM for magnetic tunnel device |
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