CN112279214A - Method for preparing concentric ring structure on surface of perovskite thin film - Google Patents
Method for preparing concentric ring structure on surface of perovskite thin film Download PDFInfo
- Publication number
- CN112279214A CN112279214A CN201910676689.2A CN201910676689A CN112279214A CN 112279214 A CN112279214 A CN 112279214A CN 201910676689 A CN201910676689 A CN 201910676689A CN 112279214 A CN112279214 A CN 112279214A
- Authority
- CN
- China
- Prior art keywords
- concentric ring
- thin film
- ring structure
- perovskite
- perovskite thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 27
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000002791 soaking Methods 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 229960001701 chloroform Drugs 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 21
- 238000002360 preparation method Methods 0.000 abstract description 14
- 238000001259 photo etching Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 4
- 239000002086 nanomaterial Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000000137 annealing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000003963 dichloro group Chemical group Cl* 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
- B81C2201/0159—Lithographic techniques not provided for in B81C2201/0157
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a method for preparing a concentric ring structure on the surface of a perovskite film. The method for preparing the perovskite thin film concentric ring structure by using the photoresist as the sacrificial layer avoids adverse environments such as the traditional photoetching technology which damage the functions of the material, and effectively protects the functionality of the material. The full solution spin coating is adopted, the preparation process is simple, and the preparation process of the perovskite thin film concentric ring with large area and low cost is realized.
Description
Technical Field
The invention relates to a preparation method of a micro-nano structure, in particular to a method for preparing a concentric ring structure on the surface of a perovskite thin film, which is applied to the technical field of preparation processes of modern photoelectric materials and devices.
Background
The circular micro-nano structure can be used for an optical resonant cavity in optical communication and is concerned by the optical resonant cavity, and comprises a filter, a laser source, an all-optical switch and the like. The ring resonant cavity has continuous internal reflection, so that light in the resonator can be effectively limited, optical loss is reduced, and the ring resonant cavity has important value in the integration of a micro photonic device. The ring resonator is easy to realize integration in an optical path, is an excellent optical element in device integration, and is commonly used for filters and modulators of optical waveguides. In addition, in the laser, the ring and ring resonant cavity can form a high-quality echo wall cavity, so that the threshold value of laser is greatly reduced, but the ring and ring resonant cavity is difficult to naturally grow and is generally prepared by a photoetching or template method.
In recent years, perovskite materials have been used as photovoltaic materials prepared by a solution-soluble method for high-performance solar cells, light-emitting devices, and photodetectors. In particular, long carrier lifetime and diffusion length, bipolar transport, high gain, high fluorescence quantum yield, and stoichiometry wavelength tunability make perovskite materials particularly attractive for laser device applications. In addition, the perovskite material is prepared into a circular micro-nano structure by utilizing the characteristic of high refractive index (2.2) of the perovskite material and is used for optically pumping perovskite micro-nano laser. However, since the perovskite material is very sensitive to oxygen, solvents and the like and has poor thermal stability, the preparation of the annular micro-nano structure of the perovskite material is difficult to realize by the traditional photoetching technology.
The invention designs a novel preparation method of a concentric ring micro-nano structure, which is characterized in that a perovskite film concentric ring structure is prepared by using photoresist as a sacrificial layer. The adverse environment that the traditional photoetching technology and the like damage the functions of the material is avoided, and the functionality of the material is effectively protected. The full solution spin coating is adopted, the preparation process is simple, and the preparation process of the perovskite thin film concentric ring with large area and low cost is realized.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to overcome the defects in the prior art, and provides a method for preparing a concentric ring structure on the surface of a perovskite thin film, so that the adverse environment of damaging the function of a material by using a photoetching technology and the like is avoided, and the functional integrity of the material can be effectively protected. The invention solves the problem of preparation of the perovskite material circular micro-nano structure, is full-solution spin-coating, has simple preparation process and low cost, and has great application potential in the preparation of the micro-nano structure. The process can adjust the appearance of the concentric rings by selecting the thickness of the lower photoresist layer and the solvent, and has good repeatability. The preparation principle is shown in fig. 1, toluene permeates into the photoresist at the lower layer through the perovskite thin film at the upper layer, so that the photoresist is melted and expanded, the perovskite thin film at the upper layer is driven to expand and deform together, and individual bulges are formed. When the soaking time is short (40 s), the photoresist is not completely dissolved, and after the photoresist is completely volatilized after being taken out, the perovskite thin film drives the photoresist to form a large-range concentric ring structure. When the soaking time is long (about 3min), the photoresist on the lower layer is completely dissolved, and the perovskite thin film only realizes a concentric ring structure in a small range.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
a method for preparing a concentric ring structure on the surface of a perovskite thin film comprises the following steps:
1) spin-coating a layer of photoresist on a substrate, and heating and curing; preferably, the heating curing temperature is 70 ℃ and the time is 5 min.
2) Spin-coating a layer of perovskite thin film on the photoresist; preferably the perovskite material is a quasi-2D perovskite.
3) Soaking the whole body in an organic solvent; preferably, the organic solvent is toluene, chlorobenzene or trichloromethane.
4) And taking out the perovskite thin film concentric ring structure on the substrate.
Compared with the prior art, the invention has the following obvious and prominent substantive characteristics and remarkable advantages:
1. the method for preparing the concentric ring structure on the surface of the perovskite film avoids adverse environments such as a photoetching technology and the like which damage the functions of the material, so that the functionality of the material can be effectively protected.
2. The perovskite thin film concentric ring structure is prepared by using the photoresist as the sacrificial layer, the preparation process is simple, the repeatability is good, and the reaction process is mild.
3. The method for preparing the concentric ring structure on the surface of the perovskite thin film realizes the preparation of the novel micro-nano structure of the perovskite material, enriches the resonant cavity types of the perovskite material, and improves the application value of the perovskite material in optoelectronic devices.
Drawings
In order to more clearly illustrate the technical solution in the embodiment of the present invention, the drawings required in the description of the embodiment will be briefly introduced as follows:
FIG. 1 is a flow chart of a method for forming a concentric ring structure on the surface of a perovskite thin film according to an embodiment of the present invention.
FIG. 2 is a dark-field microscope picture of a concentric ring structure formed on the surface of a perovskite thin film according to an embodiment of the present invention.
FIG. 3 shows that in the first embodiment of the present invention, a concentric ring structure is formed on the surface of the perovskite thin film for optical pumping laser, and the length of the scale is 25 μm.
FIG. 4 is a bright field microscope image of a concentric ring structure formed on the surface of a perovskite thin film according to the second and third embodiments of the present invention, wherein the length of the ruler is 25 μm.
Detailed Description
The embodiments of the present invention will be described in detail with reference to the drawings and examples, so that how to apply the technical means to solve the technical problem mentioned above and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the features in the embodiments of the present invention may be combined with each other, and the formed technical solutions are within the scope of the present invention.
The invention discloses a method for preparing a concentric ring structure on the surface of a perovskite film.
The preferred embodiments of the invention are detailed below:
the first embodiment is as follows:
in this embodiment, referring to fig. 1, 2 and 4, a method for preparing a concentric ring structure on the surface of a perovskite thin film comprises the following steps:
1) taking a smooth glass substrate, spin-coating photoresist with the thickness of 2.4 mu m, and annealing at 70 ℃ for 5 min;
2) modifying the surface of the photoresist, and carrying out O-Plasma surface treatment for 10W treatment for 10s to increase the hydrophilicity;
3) and spin-coating a quasi-2D perovskite thin film with the thickness of 70 nm. The quasi 2D perovskite thin film is NMA2MAPb2Br7；
4) Soaking the substrate in a toluene solvent for a period of time to wash off the photoresist on the lower layer, and taking out the photoresist to form the perovskite concentric ring structure on the substrate. When the soaking time is shorter than 40s, a concentric ring structure as shown in fig. 2a is formed; when the soaking time is longer than 3min, a concentric ring structure shown in figure 2b is formed;
5) the prepared perovskite concentric ring structure is subjected to light pumping laser characterization, as shown in fig. 4, concentric ring laser of perovskite can be formed, and the concentric ring micro-cavity is constructed, so that the threshold of the laser is reduced.
Example two:
in this embodiment, referring to fig. 3, a method for preparing a concentric ring structure on the surface of a perovskite thin film comprises the following steps:
1) taking a smooth glass substrate, spin-coating photoresist with the thickness of 2.4 mu m, and annealing at 70 ℃ for 5 min;
2) modifying the surface of the photoresist, and carrying out O-Plasma surface treatment for 10W treatment for 10s to increase the hydrophilicity;
3) and spin-coating a quasi-2D perovskite thin film with the thickness of 70 nm. The quasi 2D perovskite thin film is NMA2MAPb2Br7；
4) Respectively soaking in toluene, chlorobenzene and chloroform solvents for 3min, and taking out to form a perovskite concentric ring structure on the substrate. As shown in fig. 3, a, b, and c correspond to perovskite concentric ring structures obtained by immersing in toluene, chlorobenzene, and chloroform solvents, respectively. The different cleaning solvents can regulate the ring spacing of the concentric rings, toluene to 10 mu m, chlorobenzene to 3 mu m and dichloro to 1.5 mu m.
Example three:
in this embodiment, referring to fig. 3, a method for preparing a concentric ring structure on the surface of a perovskite thin film comprises the following steps:
1) taking a smooth glass substrate, respectively spin-coating photoresist with the thickness of 5 micrometers, 2.4 micrometers and 1.7 micrometers, and annealing at 70 ℃ for 5 min;
2) modifying the surface of the photoresist, and carrying out O-Plasma surface treatment for 10W treatment for 10s to increase the hydrophilicity;
3) and spin-coating a quasi-2D perovskite thin film with the thickness of 70 nm. The quasi 2D perovskite thin film is NMA2MAPb2Br7；
4) Soaking in chlorobenzene solvent for 3min, and taking out to form a perovskite concentric ring structure on the substrate. As shown in fig. 3, d, e, and f correspond to bright field microscopic images of perovskite concentric ring structure obtained by soaking chlorobenzene with lower photoresist thickness of 5, 2.4, and 1.7 μm, respectively. It was found that as the thickness of the underlying photoresist decreased, the diameters of the concentric rings gradually decreased, 600, 300, 225 μm, respectively.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes and modifications can be made according to the purpose of the invention, and all changes, modifications, substitutions, combinations and simplifications made according to the spirit and principle of the technical solution of the present invention should be equivalent substitution ways, so long as the object of the present invention is met, and the present invention is within the protection scope of the present invention, as long as the method for preparing concentric ring structures on the surface of perovskite thin film does not depart from the present invention.
Claims (5)
1. A method for preparing a concentric ring structure on the surface of a perovskite thin film is characterized by comprising the following steps:
1) spin-coating a layer of photoresist on a substrate, and heating and curing;
2) spin coating a perovskite thin film on the photoresist;
3) soaking the whole body in an organic solvent, and washing off the photoresist on the lower layer;
4) and taking out the perovskite thin film concentric ring structure on the substrate.
2. The method of claim 1, wherein: the photoresist in the step 1) can be dissolved in the solvent in the step 3).
3. The method of claim 1, wherein: the organic solvent in the step 3) is any one of toluene, chlorobenzene and trichloromethane or a mixture thereof.
4. The method of claim 1, wherein: the size of the concentric ring is regulated and controlled by controlling the thickness of the photoresist in the step 1).
5. The method of claim 1, wherein: the distance between the concentric rings is regulated by controlling the organic solvent in the step 3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910676689.2A CN112279214B (en) | 2019-07-25 | 2019-07-25 | Method for preparing concentric ring structure on perovskite film surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910676689.2A CN112279214B (en) | 2019-07-25 | 2019-07-25 | Method for preparing concentric ring structure on perovskite film surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112279214A true CN112279214A (en) | 2021-01-29 |
| CN112279214B CN112279214B (en) | 2023-12-22 |
Family
ID=74418812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910676689.2A Active CN112279214B (en) | 2019-07-25 | 2019-07-25 | Method for preparing concentric ring structure on perovskite film surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112279214B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19607166A1 (en) * | 1995-04-25 | 1996-10-31 | Mitsubishi Electric Corp | Photoresist coating appts. for semiconductor integrated circuit mfr. |
| JP2002093680A (en) * | 2000-09-13 | 2002-03-29 | Tdk Corp | Coater and coating method of photoresist |
| US20030006425A1 (en) * | 2000-02-22 | 2003-01-09 | International Rectifier Corporation | Manufacturing process and termination structure for fast recovery diode |
| JP2004103781A (en) * | 2002-09-09 | 2004-04-02 | Canon Inc | Method and device for liquid coating |
| US20120161600A1 (en) * | 2008-11-25 | 2012-06-28 | Norris David J | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
| CN108963001A (en) * | 2018-07-02 | 2018-12-07 | 合肥工业大学 | A kind of method of located growth perovskite thin film array |
-
2019
- 2019-07-25 CN CN201910676689.2A patent/CN112279214B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19607166A1 (en) * | 1995-04-25 | 1996-10-31 | Mitsubishi Electric Corp | Photoresist coating appts. for semiconductor integrated circuit mfr. |
| US20030006425A1 (en) * | 2000-02-22 | 2003-01-09 | International Rectifier Corporation | Manufacturing process and termination structure for fast recovery diode |
| JP2002093680A (en) * | 2000-09-13 | 2002-03-29 | Tdk Corp | Coater and coating method of photoresist |
| JP2004103781A (en) * | 2002-09-09 | 2004-04-02 | Canon Inc | Method and device for liquid coating |
| US20120161600A1 (en) * | 2008-11-25 | 2012-06-28 | Norris David J | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
| CN108963001A (en) * | 2018-07-02 | 2018-12-07 | 合肥工业大学 | A kind of method of located growth perovskite thin film array |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112279214B (en) | 2023-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cegielski et al. | Integrated perovskite lasers on a silicon nitride waveguide platform by cost-effective high throughput fabrication | |
| CN1243286C (en) | Method for producing polymer light wave guide device based on silicon lining | |
| CN104898202B (en) | A kind of fiber waveguide and preparation method thereof | |
| CN109324372B (en) | Silicon optical waveguide end face coupler | |
| CN102253459A (en) | Silicon-based waveguide grating coupler on insulator and preparation method thereof | |
| CN102323646A (en) | Grating coupler and making method thereof | |
| CN111564533B (en) | Preparation method of 1550nm waveband single photon source, single photon source and optical device | |
| CN102778724A (en) | Suspension guided-wave optical device based on silicon substrate nitride and method for producing suspension guided-wave optical device based on silicon substrate nitride | |
| CN103414107A (en) | Method for manufacturing multi-wavelength photonic integration transmitter chip through quantum well intermixing | |
| CN112279214A (en) | Method for preparing concentric ring structure on surface of perovskite thin film | |
| CN110147023A (en) | A kind of raman amplifier and preparation method thereof based on graphene and silica-based nanowire | |
| US20140204466A1 (en) | Optical element structure and optical element fabricating process for the same | |
| Zhang et al. | Multifunctional TiO 2/ormosils organic-inorganic hybrid films derived by a sol-gel process for photonics and UV nanoimprint applications | |
| CN103606809B (en) | A kind of manufacture method of optical fiber micro-ring resonator and device | |
| CN109192836B (en) | Preparation method of LED structure with graded-refractive-index nano structure combined with nano lens | |
| CN115774300A (en) | Hetero-integrated silicon-based thin film lithium niobate modulator and manufacturing method thereof | |
| CN112612078B (en) | High-efficiency coupling waveguide based on GOI or SOI and preparation method thereof | |
| WO2016122056A1 (en) | Optical waveguide-type saturable absorber using interaction with evanescent field, manufacturing method therefor, pulse laser device using same and pulse laser using same | |
| CN109683354B (en) | Mid-infrared band modulator and preparation method thereof | |
| CN110133800B (en) | Waveguide type photonic crystal heterostructure capable of realizing wide-band unidirectional high transmission | |
| Wang et al. | CMOS-compatible silicon etched U-grooves with groove-first fabrication for nanophotonic applications | |
| KR102172248B1 (en) | Inorganic hybrid photonic film and method of preparing the same | |
| CN113031151A (en) | Chalcogenide slit optical waveguide structure and preparation method thereof | |
| JPH02244104A (en) | Glass optical wave guide | |
| TWI461773B (en) | Nano/micro-patterned optical device and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |