TWI461773B - Nano/micro-patterned optical device and fabrication method thereof - Google Patents

Nano/micro-patterned optical device and fabrication method thereof Download PDF

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TWI461773B
TWI461773B TW098125818A TW98125818A TWI461773B TW I461773 B TWI461773 B TW I461773B TW 098125818 A TW098125818 A TW 098125818A TW 98125818 A TW98125818 A TW 98125818A TW I461773 B TWI461773 B TW I461773B
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micro
nano
line
film substrate
patterned
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TW201028749A (en
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Lon Wang
Jian Hong Chen
Shih Min Chuo
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Univ Nat Taiwan
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圖形化微奈米級細線之光學元件及其製作方法Graphical micro-nano-scale optical component and manufacturing method thereof

本發明係關於一種光學元件及其製作方法,特別是關於一種圖形化微奈米線光學元件及其製作方法。The present invention relates to an optical component and a method of fabricating the same, and more particularly to a patterned micro-nano-line optical component and a method of fabricating the same.

近年來,微細光纖的製作已有多組研究團隊進行發展研究,並且利用上述微細光纖製作各式之光學元件,如美國專利7,421,173揭示一種用於低損耗光波導的亞波長直徑的氧化矽線(subwavelength-diameter silica wires for low-loss optical waveguiding),其中,Mazur 等人利用藍寶石錐形體作為均勻加熱之媒介,以火焰加熱使得光纖變為直徑係數十奈米之細線;美國專利6,658,183揭露一種錐形微光纖裝置及其製程(process for fabricating tapered microstructured fiber system and resultant system),其中,Chandaoia 等人將光子晶體光纖以火焰加熱後,分別將兩端反向拉伸,如同製作耦合器之方式抽出十微米直徑之細線,此外,考慮光子晶體之纖核大小,其中心導光區域之直徑約為2.5微米。In recent years, there have been a number of research teams working on the development of microfibers, and various optical components have been fabricated using the above-described microfibers. For example, U.S. Patent No. 7,421,173 discloses a subwavelength diameter yttrium oxide wire for low loss optical waveguides ( Subwavelength-diameter silica wires for low-loss optical waveguiding), wherein Mazur et al. utilize a sapphire cone as a medium for uniform heating, and heat the flame to make the fiber into a fine line having a diameter of ten nanometers; U.S. Patent No. 6,658,183 discloses a cone. shaped micro-fiber apparatus and process (process for fabricating tapered microstructured fiber system and resultant system), wherein, Chandaoia et al photonic crystal fiber after the flame heating, the ends are reverse stretch, as production methods of extracting the coupler A fine line of ten micrometers in diameter, in addition, considering the size of the core of the photonic crystal, the diameter of the central light guiding region is about 2.5 microns.

承上所述,關於由上述微奈米級光纖所製成之光學元件,包含:環形共振腔、環形雷射、感測器、濾波器及其他類型之光學元件,至今已有許多相關文獻陸續刊載發表,如:M. Sumetsky, "Basic Elements for Microfiber Photonics:Micro/Nanofibers and Microfiber Coil Resonators",Journal of Lightwave Technology,Vol. 26,Issue 1,pp. 21-27,2008;或F. Xu et al. ,"Demonstration of a Refractometric Sensor Based on Optical Microfiber Coil Resonator",Applied Physics Letters 2008,Vol. 92,pp. 101126。然而,上述研究之共通點係沒有將微奈米級細線依設計而正確放置,因此無法應用於需精確設計之元件,如:1550/980波長之分波多工器等。As mentioned above, the optical components made of the above micro-nano fiber include: a ring resonator, a ring laser, a sensor, a filter, and other types of optical components. Published in, for example: M. Sumetsky, "Basic Elements for Microfiber Photonics: Micro/Nanofibers and Microfiber Coil Resonators", Journal of Lightwave Technology, Vol. 26, Issue 1, pp. 21-27, 2008; or F. Xu et Al. , "Demonstration of a Refractometric Sensor Based on Optical Microfiber Coil Resonator", Applied Physics Letters 2008, Vol. 92, pp. 101126. However, the common point of the above research is that the micro-nano-fine wires are not properly placed according to the design, so they cannot be applied to components that need to be accurately designed, such as a 1550/980 wavelength demultiplexer.

再者,傳統上用於放置光纖之V型內陷溝槽,其橫切面係為V型,如美國專利6,621,951揭露一種具光纖之薄膜結構元件(thin film structures in devices with a fiber on a substrate),其中,提及Zhao 等人於基板上製作V型內陷溝槽並沉積不同材料之薄膜,上述薄膜用以增加光纖與溝槽之黏附程度,上述具光纖之薄膜結構元件係大量被使用於光耦合之應用。此外,美國專利申請2007/0289698揭示一種光纖圖形送料裝置及其使用方法(fiber pattern applicator systems and methods),其中,Fleischman 等人使用一光纖圖形塗佈裝置,上述裝置包含一長臂,上述長臂包含一進端與一末端,上述進端連接於一光纖線軸用以持續進料;上述末端指向愈放置光纖之處,此外,欲放置之光纖被置於上述長臂之一中間通道。Furthermore, the V-shaped recessed trenches conventionally used for placing optical fibers have a V-shaped cross-section, as disclosed in US Patent No. 6,621,951, which is incorporated herein by reference. Among them, Zhao et al. are made to form a V-shaped indentation trench on a substrate and deposit a film of different materials for increasing the adhesion of the optical fiber to the trench. Application of optical coupling. In addition, U.S. Patent Application No. 2007/0289698 discloses a fiber pattern applicator systems and methods, wherein Fleischman et al. use a fiber pattern coating device comprising a long arm, the long arm An end end and an end end are connected, and the end end is connected to a fiber spool for continuous feeding; the end point is directed to the place where the fiber is placed, and further, the fiber to be placed is placed in an intermediate passage of one of the long arms.

上述兩件美國專利(US6,621,95;US2007/0289698)係能用以放置直線光纖與任意位置便化之光先,然而要藉此應用於微奈米級光纖則顯得相當困難。當光纖細至數微米或數百奈米直徑,此時肉眼已不可見,所以難以使用手操控而將光纖置於溝槽中,再者,上述微奈米級光纖容易附著於任意表面,故不易使其維持直線放置,因此無法使用V型內陷溝槽佈線。此外,微奈米級光纖之重量極輕,若沒有讓光纖與基材表面吸附,則上述微奈米級光纖及有可能產生移動甚至是被風吹走。The above two U.S. patents (US 6,621,95; US 2007/0289698) can be used to place linear optical fibers and light at any position, but it is quite difficult to apply them to micro-nano fibers. When the optical fiber is as thin as a few micrometers or hundreds of nanometers in diameter, the naked eye is not visible at this time, so it is difficult to use the hand control to place the optical fiber in the groove. Further, the above micro-nano fiber is easily attached to any surface, so It is not easy to keep it in a straight line, so V-shaped recessed trench wiring cannot be used. In addition, the micro-nano fiber is extremely light in weight. If the fiber is not adsorbed on the surface of the substrate, the micro-nano fiber may be moved or even blown away by the wind.

有鑒於以上所述,開發出微奈米級之圖形化光學元件及其製作方法係產業界亟欲發展之重點。In view of the above, the development of micro-nano-grade patterned optical components and their fabrication methods are the focus of the industry's development.

鑒於上述之發明背景中,為了符合產業上之要求,本發明提出一種圖形化微奈米線光學元件,包含:軟膜基材,其表面包含藉由微影程序(lithography)形成之微奈米圖形(micro/nano-pattern),包含複數內陷溝槽並且具有疏水性或親水性;及微奈米細線,置於上述內陷溝槽中,用以形成複數光波導元件,上述光波導元件包含至少一光學耦合區域(optical coupling region),上述光學耦合區域位於光波導元件之接合處。In view of the above-mentioned background of the invention, in order to meet the requirements of the industry, the present invention provides a patterned micro-nano-line optical component comprising: a soft film substrate having a surface containing a micro-nano pattern formed by lithography (micro/nano-pattern) comprising a plurality of recessed trenches and having hydrophobicity or hydrophilicity; and micronefine wires disposed in the recessed trenches for forming a plurality of optical waveguide elements, the optical waveguide components comprising At least one optical coupling region, the optical coupling region being located at a junction of the optical waveguide elements.

本發明亦提出一種圖形化微奈米線光學元件之製作方法,包含下列步驟:微影程序,用以形成微奈米圖形於軟膜基材之表面,上述微奈米圖形包含複數構形;及提供微奈米細線,將微奈米細線對應結合上述構形設置並形成複數光波導元件,上述光波導元件包含光學耦合區域(optical coupling region),上述光學耦合區域位於光波導元件之接合處。The invention also provides a method for fabricating a patterned micro-nano-line optical component, comprising the steps of: a lithography process for forming a micro-nano pattern on a surface of a soft film substrate, wherein the micro-nano pattern comprises a plurality of configurations; A micro-nano thin line is provided, and the micro-nano thin line is provided in combination with the above configuration to form a plurality of optical waveguide elements, wherein the optical waveguide element comprises an optical coupling region, and the optical coupling region is located at a junction of the optical waveguide element.

本發明利用微影程序與操控工具製作出微奈米細線光學元件,其中,藉由微影程序能夠製備特定之微奈米級圖形結構,並且使得上述微奈米級圖形結構具有特定性質,如:親水性或疏水性等性質。再者,透過上述操控工具能夠使得微奈米細線精確設置於上述微奈米級圖形結構,據此製作出微奈米細線光學元件,其中,上述微奈米細線光學元件具有下列應用:光纖通訊網路之光開關與光交連器、平行投影機系統、新型DVD讀取頭以及新型顯示器相關技術,上述應用僅為示例,不以此為限。The invention utilizes a lithography program and a manipulation tool to fabricate a micro-nano-fine-line optical component, wherein a specific micro-nano-scale graphic structure can be prepared by a lithography process, and the micro-nano-scale graphic structure has specific properties, such as : Properties such as hydrophilicity or hydrophobicity. Furthermore, through the above-mentioned manipulation tool, the micro-nano thin line can be accurately set in the micro-nano-level pattern structure, thereby forming a micro-nano thin-line optical element, wherein the micro-nano thin-line optical element has the following applications: optical fiber communication network The above applications are only examples and are not limited to the use of the optical switch and optical cross-connector, parallel projector system, new DVD read head and new display related technologies.

本發明在此揭示一種圖形化微奈米線光學元件及其製作方法。為了能徹底地瞭解本發明,將在下列的描述中提出詳盡的步驟及其組成。顯然地,本發明的施行並未限定於該領域之技藝者所熟習的特殊細節。另一方面,眾所周知的組成或步驟並未描述於細節中,以避免造成本發明不必要之限制。本發明的較佳實施例會詳細描述如下,然而除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,且本發明的範圍不受限定,其以之後的專利範圍為準。The present invention discloses a patterned micro-nano-line optical component and a method of fabricating the same. In order to thoroughly understand the present invention, detailed steps and compositions thereof will be set forth in the following description. Obviously, the practice of the invention is not limited to the specific details that are apparent to those skilled in the art. On the other hand, well-known components or steps are not described in detail to avoid unnecessarily limiting the invention. The preferred embodiments of the present invention are described in detail below, but the present invention may be widely practiced in other embodiments, and the scope of the present invention is not limited by the scope of the following patents. .

本發明之第一實施例揭露一種圖形化微奈米線光學元件,包含:軟膜基材與微奈米細線。其中,上述軟膜基材表面包含藉由微影程序(lithography)形成之微奈米圖形(micro/nano-pattern),包含複數內陷溝槽並且具有疏水性或親水性等性質;而上述微奈米細線,置於上述內陷溝槽中,用以形成複數光波導元件,上述光波導元件包含至少一光學耦合區域(optical coupling region),上述光學耦合區域位於光波導元件之接合處。A first embodiment of the present invention discloses a patterned micro-nano-line optical component comprising: a soft film substrate and a micro-nano wire. Wherein the surface of the soft film substrate comprises a micro/nano-pattern formed by lithography, comprising a plurality of recessed trenches and having properties such as hydrophobicity or hydrophilicity; A thin wire of rice is disposed in the recessed trench to form a plurality of optical waveguide elements, the optical waveguide component comprising at least one optical coupling region, the optical coupling region being located at a junction of the optical waveguide component.

再者,上述軟膜基材係為熱固化(thermal curing)材料或光固化(uv-curing)材料,較佳者可為:聚二甲基矽氧烷(polydimethylsiloxane)、聚碳酸酯、聚氯乙烯、聚對苯二甲酸乙二酯、聚苯乙烯。Furthermore, the soft film substrate is a thermal curing material or a uv-curing material, preferably polydimethylsiloxane, polycarbonate, or polyvinyl chloride. , polyethylene terephthalate, polystyrene.

此外,上述微奈米細線包含下列族群之一者:矽、二氧化矽與高分子聚合物,而其直徑範圍係10奈米至100微米,再者,上述微奈米細線更包含至少一掺雜物,較佳者係選自下列族群之一者或其任意組合:金屬元素、可發光之分子與發光之原子,其中,上述摻雜物具有使得雷射能量增益之性質。In addition, the above micro-nanofine line comprises one of the following groups: bismuth, cerium oxide and high molecular polymer, and the diameter thereof ranges from 10 nm to 100 μm, and further, the above micro-nano wire further comprises at least one doping. The foreign matter, preferably one selected from the group consisting of a metal element, a luminescent molecule, and a luminescent atom, wherein the dopant has a property of making laser energy gain.

於本實施例之一較佳範例中,上述微奈米線光學元件更包含:微結構,形成於軟膜基材之表面,用以降低軟膜基材與微奈米細線之間的吸附力(adhesion force),其中,上述微結構較佳地可為顆粒結構或柱狀結構或其他突起結構。In a preferred embodiment of the present embodiment, the micro-nano-line optical component further comprises: a microstructure formed on a surface of the flexible film substrate to reduce the adsorption force between the soft film substrate and the micro-nano wire (adhesion) The above microstructure may preferably be a granular structure or a columnar structure or other protruding structure.

於本實施例之另一較佳範例中,上述微奈米線光學元件更包含:封裝結構,用以封裝包覆微奈米細線於內陷溝槽中,其中,上述封裝結構由熱固化(thermal curing)材料或光固化(uv-curing)材料所形成。In another preferred embodiment of the present embodiment, the micro-nano-line optical component further includes: a package structure for encapsulating the micro-nano wire in the recessed trench, wherein the package structure is thermally cured ( Thermal curing) The formation of materials or uv-curing materials.

本發明之第二實施例揭露一種圖形化微奈米線光學元件之製作方法,包含下列步驟:A second embodiment of the present invention discloses a method for fabricating a patterned micro-nano-line optical component, comprising the following steps:

首先,進行微影程序,用以形成微奈米圖形於軟膜基材之表面,其中,上述微奈米圖形包含複數構形並且較佳地可具有疏水性或親水性等性質。接著,提供微奈米細線,將上述微奈米細線對應結合上述構形設置並形成複數光波導元件,上述光波導元件包含光學耦合區域(optical coupling region),其中,光學耦合區域位於上述複數光波導元件間之接合處。First, a lithography process is performed to form a micro-nano pattern on the surface of the flexible film substrate, wherein the micro-nano pattern comprises a plurality of configurations and preferably has properties such as hydrophobicity or hydrophilicity. Next, a micro-nano thin line is provided, and the micro-nano thin line is correspondingly arranged in combination with the above configuration to form a plurality of optical waveguide elements, wherein the optical waveguide element comprises an optical coupling region, wherein the optical coupling region is located in the plurality of optical regions The junction between the waveguide elements.

其中,上述微影程序係能選自下列族群之一者:光學微影術(photolithography)、電子束微影術(electron beam lithography)、雷射直寫微影術(laser direct write lithography)、光學干涉微影術(optical interference lithography)與奈米壓印微影術(nano imprint lithography)。Wherein, the above lithography program can be selected from one of the following groups: photolithography, electron beam lithography, laser direct writing lithography, optics Optical interference lithography and nano imprint lithography.

於本實施例之一較佳範例中,上述構形係能為平面結構時,上述微奈米細線設置於該些構形之上方;上述構形為內陷結構時,上述微奈米細線設置於該些構形之內部;上述構形為凸起結構時,上述微奈米細線設置於該些構形之側面。In a preferred embodiment of the present embodiment, when the configuration is a planar structure, the micro-nano wires are disposed above the configurations; when the configuration is an in-situ structure, the micro-nano lines are set. In the interior of the configurations; when the configuration is a convex structure, the micro-nano wires are disposed on the sides of the configurations.

於本實施例之另一較範例中,上述微影程序包含下列步驟:首先,進行曝光顯影程序,用以形成母膜,其表面包含轉印圖形。其次,提供軟膜聚合物,其係液體狀之上述軟膜基材,並且將上述軟膜聚合物塗覆於母膜之表面,接著,進行固化程序以便固化上述軟膜聚合物並形成包含對應於轉印圖形之微奈米圖形的軟膜基材。最後,進行翻模程序從而由母膜之表面分離出軟膜基材。母膜包含下列族群之一者或其任意組合:矽基材(silicon-based substrate)、聚二甲基矽氧烷(polydimethylsiloxane)、高分子聚合物與玻璃基材。In another comparative example of the embodiment, the lithography process comprises the steps of first performing an exposure development process for forming a master film having a transfer pattern thereon. Next, a soft film polymer is provided which is a liquid film substrate as described above, and the above soft film polymer is applied to the surface of the mother film, followed by a curing process for curing the above soft film polymer and forming a pattern corresponding to the transfer film The soft film substrate of the micro-nano pattern. Finally, a mold turning process is performed to separate the soft film substrate from the surface of the mother film. The master film comprises one of the following groups or any combination thereof: a silicon-based substrate, a polydimethylsiloxane, a high molecular polymer, and a glass substrate.

於本實施例之更佳範例中,上述製作方法更包含:封裝程序,利用封裝材料將微奈米細線與上述構形封裝結合,其中,封裝材料係能為熱固化(thermal curing)材料或光固化(uv-curing)材料。In a further example of the embodiment, the manufacturing method further comprises: a packaging process, wherein the micro-nano wire is combined with the above-mentioned configuration package by using a packaging material, wherein the encapsulation material is a thermal curing material or light. Curing (uv-curing) material.

於本實施例之最佳範例中,上述製作方法更包含:提供操控工具,上述操控工具包含:鎢針與具X、Y、Z、θx四自由度之四軸微動平台。其中,上述鎢針用以接觸移動微奈米細線,而四軸微動平台連接鎢針,用以移動鎢針以使得鎢針將微奈米細線移動對應設置於上述構形。此外,上述較佳範例更包含提供界面劑,用以降低軟膜基材與微奈米細線之吸附力(adhesion force),以便於鎢針移動上述微奈米細線,其中,界面劑為具高揮發性之液體,較佳者可為乙醇。In the preferred embodiment of the embodiment, the manufacturing method further includes: providing a manipulation tool, wherein the manipulation tool comprises: a tungsten needle and a four-axis micro-motion platform with four degrees of freedom of X, Y, Z, and θx. Wherein, the tungsten needle is used for contacting the moving micro-nano wire, and the four-axis micro-motion platform is connected with the tungsten needle for moving the tungsten needle so that the tungsten needle moves the micro-nano wire correspondingly to the above configuration. In addition, the above preferred examples further comprise providing an interface agent for reducing the adhesion force of the soft film substrate and the micro-nano wire, so that the tungsten needle moves the micro-nano wire, wherein the interface agent has a high volatilization The liquid of the nature, preferably ethanol.

另一方面,上述軟膜基材係能為熱固化(thermal curing)材料或光固化(uv-curing)材料,較佳者可為:聚二甲基矽氧烷(polydimethylsiloxane)、聚碳酸酯、聚氯乙烯、聚對苯二甲酸乙二酯、聚苯乙烯。On the other hand, the soft film substrate can be a thermal curing material or a uv-curing material, preferably polydimethylsiloxane, polycarbonate, or poly. Vinyl chloride, polyethylene terephthalate, polystyrene.

此外,上述微奈米細線包含下列族群之一者:矽、二氧化矽與高分子聚合物,而其直徑範圍係10奈米至100微米,再者,上述微奈米細線更包含至少一掺雜物,較佳者係選自下列族群之一者或其任意組合:金屬元素、可發光之分子與發光之原子,其中,上述摻雜物具有使得雷射能量增益之性質。In addition, the above micro-nanofine line comprises one of the following groups: bismuth, cerium oxide and high molecular polymer, and the diameter thereof ranges from 10 nm to 100 μm, and further, the above micro-nano wire further comprises at least one doping. The foreign matter, preferably one selected from the group consisting of a metal element, a luminescent molecule, and a luminescent atom, wherein the dopant has a property of making laser energy gain.

前述說明關於軟膜基材、微奈米細線、掺雜物、母膜之材質僅為舉例,非因此限制本發明。The foregoing description is directed to the material of the soft film substrate, the micro-nanofine wire, the dopant, and the mother film, and is not intended to limit the present invention.

Fan 例一Example 1

步驟I:進行一微影程序,包含:步驟IA與步驟IB,如第1a至第1d圖所示,用以形成至少一微奈米圖形21於一軟膜基材2之表面,該微奈米圖形21包含複數內陷溝槽,其中,上述內陷溝槽之橫切面係能為方形、圓弧形、V形、多邊形或其他任意形狀,本範例以方形為示例。Step I: Performing a lithography process, comprising: Step IA and Step IB, as shown in Figures 1a to 1d, for forming at least one micro-nano pattern 21 on the surface of a soft film substrate 2, the micro-nano The pattern 21 includes a plurality of recessed trenches, wherein the cross-section of the recessed trenches can be square, circular, V-shaped, polygonal or any other shape. This example is exemplified by a square.

步驟IA:進行一曝光顯影程序,用以形成一母膜1,其表面包含至少一轉印圖形111,包含:步驟i與步驟ii。Step IA: performing an exposure development process for forming a mother film 1 having a surface containing at least one transfer pattern 111, comprising: step i and step ii.

步驟i:將負光阻SU8-2010(MicroChem)與負光阻SU8-2005(MicroChem)以每分鐘500轉且持續5秒相混合於旋轉塗佈台,並將上述混合後之負光阻以每分鐘3000轉且持續30秒之塗佈方式,旋塗厚度為5微米之光阻11於一矽基材10表面。Step i: mixing negative photoresist SU8-2010 (MicroChem) and negative photoresist SU8-2005 (MicroChem) at a rotating coating station at 500 rpm and for 5 seconds, and mixing the negative photoresist A coating method of 3000 rpm and a duration of 30 seconds was applied to the surface of the substrate 10 by spin coating of a photoresist having a thickness of 5 μm.

步驟ii:將上述5微米之光阻11進行溫度為95℃且為時3分鐘之軟烤,接著,以曝光光源8以溫度為95℃且為時3分鐘之曝烤,隨後顯影1分鐘,然後進行溫度為95℃且為時5分鐘之硬烤,藉此獲得一表面包含轉印圖形111之母膜1,該微奈米圖形21包含環形凸起結構111A與線形凸起結構111B,如第2圖所示。Step ii: The above-mentioned 5 micron photoresist 11 was subjected to soft baking at a temperature of 95 ° C for 3 minutes, and then exposed to an exposure light source 8 at a temperature of 95 ° C for 3 minutes, followed by development for 1 minute. Then, a hard baking was carried out at a temperature of 95 ° C for 5 minutes, thereby obtaining a mother film 1 having a transfer pattern 111 comprising a ring-shaped convex structure 111A and a linear convex structure 111B, such as Figure 2 shows.

步驟IB,用以形成至少一微奈米圖形21於一軟膜基材2之表面,包含:步驟iii與步驟iv,其中,上述微奈米圖形21包含一環形內陷溝槽21A與一線形內陷溝槽21B。Step IB, forming at least one micro-nano pattern 21 on the surface of a flexible film substrate 2, comprising: step iii and step iv, wherein the micro-nano pattern 21 comprises an annular recessed trench 21A and a linear shape Trap 21B.

步驟iii:進行一塗覆程序,將一軟膜聚合物(未圖示)塗覆於上述具有轉印圖形111之母膜1表面,隨後進行一固化程序,用以加熱固化上述軟膜聚合物(未圖示)並形成包含對應於轉印圖形111之微奈米圖形21之軟膜基材2,其中,該軟膜聚合物(未圖示)為液體狀之軟膜基材:二甲基矽氧烷(polydimethylsiloxane;PDMS,RTV184,Dow Corning 10:1)。Step iii: performing a coating process of applying a soft film polymer (not shown) to the surface of the mother film 1 having the transfer pattern 111, followed by a curing process for heating and curing the soft film polymer (not And forming a soft film substrate 2 comprising a micro-nano pattern 21 corresponding to the transfer pattern 111, wherein the soft film polymer (not shown) is a liquid soft film substrate: dimethyl decane ( Polydimethylsiloxane; PDMS, RTV184, Dow Corning 10:1).

步驟iv:進行一翻模程序,由該母膜1之表面分離出上述軟膜基材2,如第3圖所示。此外,上述軟膜基材經過一裁切步驟。Step iv: a mold-changing process is performed to separate the soft film substrate 2 from the surface of the mother film 1, as shown in Fig. 3. Further, the above soft film substrate is subjected to a cutting step.

步驟II:提供至少一微奈米細線3。Step II: Providing at least one micronite fine line 3.

步驟III:進行一置入程序,以操控工具將上述微奈米細線置於內陷溝槽中,其中,上述操控工具包含一鎢針4、一種具有X、Y、Z、θx四自由度之四軸微動平台(未圖示)。上述鎢針連接四軸微動平台(未圖示),藉由四軸微動平台(未圖示)移動,並得以接觸移動微奈米細線3從而將微奈米細線3移動置於環形內陷溝槽21A與線形內陷溝槽21B中,如第4圖所示。Step III: performing an insertion process to place the micro-nano wire in the recessed groove by a manipulation tool, wherein the manipulation tool comprises a tungsten needle 4, a four-degree of freedom having X, Y, Z, and θx Four-axis micro-motion platform (not shown). The tungsten needle is connected to a four-axis micro-motion platform (not shown), and is moved by a four-axis micro-motion platform (not shown), and is brought into contact with the moving micro-nano wire 3 to move the micro-nano wire 3 into the annular inner groove. The groove 21A and the linear indentation groove 21B are as shown in Fig. 4.

此外,上述微奈米細線之直徑約2微米,而鎢針4之曲率半徑亦約為2微米,其中,上述鎢針4可經由以下方式調整曲率:於兩個裝有濃度2M之氫氧化鉀溶液器皿(未圖示)中分別置入上述鎢針4與一圓形石墨電極(未圖示),通入正電於上述鎢針4形成一正極,而上述石墨電極(未圖示)則為一負極,於10伏特之外加電壓下,上述鎢針4產生氧化還原反應而形成部份游離之金屬離子,因而逐漸變細,並且經由四軸微動平台之Z軸(未圖示)控制,藉此獲得各種不同曲率半徑之鎢針4。另一方面,由於操作時,微奈米細線3與軟膜基材2間之吸附力,將使得上述鎢針4不易移動微奈米細線3,因此於軟膜基材2表面添加具揮發性之高純度酒精(未圖示)用以降低上述吸附力。In addition, the diameter of the micro-nano wire is about 2 micrometers, and the radius of curvature of the tungsten needle 4 is also about 2 micrometers, wherein the tungsten needle 4 can adjust the curvature by: two potassium hydroxides having a concentration of 2M. The tungsten needle 4 and a circular graphite electrode (not shown) are respectively placed in a solution vessel (not shown), and a positive electrode is formed by the positive electrode, and the graphite electrode (not shown) is formed. For a negative electrode, the tungsten needle 4 is subjected to a redox reaction to form a partially free metal ion at a voltage of 10 volts, thereby being tapered, and controlled by a Z-axis (not shown) of the four-axis micro-motion platform. Thereby, tungsten needles 4 of various curvature radii are obtained. On the other hand, the adsorption force between the micro-nanofine wire 3 and the soft film substrate 2 during operation causes the tungsten needle 4 to be difficult to move the micro-nano wire 3, so that the surface of the soft film substrate 2 is highly volatile. Purity alcohol (not shown) is used to reduce the above adsorption force.

步驟IV:進行一封裝程序,利用一封裝材料(未圖示)將微奈米細線3封裝包覆於上述環形內陷溝槽21A與線形內陷溝槽21B中,據此完成上述圖形化微奈米線光學元件7之製作。Step IV: performing a packaging process, using a package material (not shown) to encapsulate the micro-nano wire 3 in the annular recessed trench 21A and the linear recessed trench 21B, thereby completing the above-mentioned graphic micro Production of nanowire optical element 7.

範例二Example 2

請參閱第5圖所示,提供錐狀光纖耦合器5A與錐狀光纖耦合器5B,將氦氖雷射產生之紅光6以漸減波(evanescent wave)方式引導至位於微奈米圖形21之微奈米細線3,從而量測上述圖形化微奈米線光學元件7特有之穿透頻譜,並能藉由程式模擬找出其穿透係數、衰減係數以及耦合損耗。其中,上述圖形化微奈米線光學元件7之共振頻譜之能量衰減可到達7dB。Referring to FIG. 5, a tapered fiber coupler 5A and a tapered fiber coupler 5B are provided, and the red light 6 generated by the krypton laser is guided in an evanescent wave manner to the micro-nano pattern 21. The micro-nano wire 3 is used to measure the specific penetration spectrum of the above-mentioned patterned micro-nano-line optical element 7, and the penetration coefficient, attenuation coefficient and coupling loss can be found by program simulation. The energy attenuation of the resonance spectrum of the patterned micro-nano-line optical element 7 can reach 7 dB.

此外,錐狀光纖耦合器5A與錐狀光纖耦合器5B係由ERICSSON公司之FSU975熔接機器(未圖示)製成,上述熔接機器應用電極放電使得標準之單模光纖(未圖示)熔化,並使用壓電材料控制之平移台(未圖示)使上述單模光纖(未圖示)拉伸變長,接著,經由多階段之放電過程,藉此獲得錐狀尖端與微奈米細線3尺度相近之錐狀光纖耦合器5A與錐狀光纖耦合器5B。Further, the tapered fiber coupler 5A and the tapered fiber coupler 5B are made of an FSU975 welding machine (not shown) of ERICSSON, Inc., which uses an electrode discharge to melt a standard single mode fiber (not shown). The single-mode optical fiber (not shown) is stretched and lengthened by a piezoelectric material-controlled translation stage (not shown), and then, through a multi-stage discharge process, thereby obtaining a tapered tip and a micronite fine line 3 The tapered fiber coupler 5A and the tapered fiber coupler 5B are similar in scale.

顯然地,依照上面實施例中的描述,本發明可能有許多的修正與差異。因此需要在其附加的權利要求項之範圍內加以理解,除了上述詳細的描述外,本發明還可以廣泛地在其他的實施例中施行。上述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離本發明所揭示之精神下所完成的等效改變或修飾,均應包含在下述申請專利範圍內。Obviously, many modifications and differences may be made to the invention in light of the above description. It is therefore to be understood that within the scope of the appended claims, the invention may be The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the claims of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following claims. Within the scope.

1...母膜1. . . Master film

10...矽基材10. . . Bismuth substrate

11...光阻11. . . Photoresist

111...轉印圖形111. . . Transfer pattern

111A...環形凸起結構111A. . . Annular raised structure

111B...線形凸起結構111B. . . Linear raised structure

2...軟膜基材2. . . Soft film substrate

21...微奈米圖形twenty one. . . Micro-nano graphics

21A...環形內陷溝槽21A. . . Annular recessed trench

21B...線形內陷溝槽21B. . . Linear trap trench

3...微奈米細線3. . . Micro-nano thin line

4...鎢針4. . . Tungsten needle

5A...錐狀光纖耦合器5A. . . Cone fiber coupler

5B...錐狀光纖耦合器5B. . . Cone fiber coupler

6...氦氖雷射產生之紅光6. . . Red light from the laser

7...圖形化微奈米線光學元件7. . . Graphical micro-nano-line optics

8...曝光光源8. . . Exposure light source

第1a圖為本發明範例一所揭露之微影程序示意圖。FIG. 1a is a schematic diagram of a lithography program disclosed in Example 1 of the present invention.

第1b圖為本發明範例一所揭露之微影程序示意圖。FIG. 1b is a schematic diagram of a lithography program disclosed in Example 1 of the present invention.

第1c圖為本發明範例一所揭露之微影程序示意圖。FIG. 1c is a schematic diagram of a lithography program disclosed in Example 1 of the present invention.

第1d圖為本發明範例一所揭露之微影程序示意圖。FIG. 1d is a schematic diagram of a lithography program disclosed in Example 1 of the present invention.

第2圖為本發明範例一所揭露之轉印圖形示意圖。FIG. 2 is a schematic diagram of a transfer pattern disclosed in Example 1 of the present invention.

第3圖為本發明範例一所揭露之微奈米圖形示意圖。FIG. 3 is a schematic diagram of a micro-nano diagram disclosed in Example 1 of the present invention.

第4圖為本發明範例一所揭露之圖形化微奈米線光學元件示意圖。4 is a schematic view of a patterned micro-nano-line optical component disclosed in Example 1 of the present invention.

第5圖為本發明範例二所揭露之圖形化微奈米線光學元件之光學耦合示意圖。FIG. 5 is a schematic view showing the optical coupling of the patterned micro-nano-line optical component disclosed in Example 2 of the present invention.

2‧‧‧軟膜基材2‧‧‧Soft film substrate

21‧‧‧微奈米圖形21‧‧‧micron graphics

3‧‧‧微奈米細線3‧‧‧micron thin wire

5A‧‧‧錐狀光纖耦合器5A‧‧‧Cone Fiber Coupler

5B‧‧‧錐狀光纖耦合器5B‧‧‧Cone Fiber Coupler

6‧‧‧氦氖雷射產生之紅光6‧‧‧Red light from the laser

7‧‧‧圖形化微奈米線光學元件7‧‧‧Graphical micro-nano-line optics

Claims (31)

一種圖形化微奈米線光學元件,包含:一軟膜基材,其表面包含至少一具親水性或疏水性之微奈米圖形(micro/nano-pattern),該微奈米圖形包含複數內陷溝槽;及至少一種微奈米細線,置於該些內陷溝槽中,用以形成複數光波導元件,該些光波導元件包含至少一光學耦合區域(optical coupling region),該光學耦合區域位於該些光波導元件之接合處。 A patterned micro-nano-line optical component comprising: a soft film substrate having at least one hydrophilic or hydrophobic micro/nano-pattern on its surface, the micro-nano pattern comprising a plurality of invades a trench; and at least one micro-nano wire disposed in the recessed trenches for forming a plurality of optical waveguide components, the optical waveguide components comprising at least one optical coupling region, the optical coupling region Located at the junction of the optical waveguide elements. 如請求項1之圖形化微奈米線光學元件,其中,該微奈米圖形係藉由微影程序(lithography)形成。 The patterned micro-nano-line optical component of claim 1, wherein the micro-nano pattern is formed by lithography. 如請求項1之圖形化微奈米線光學元件,其中,該軟膜基材係為熱固化(thermal curing)材料或光固化(uv-curing)材料。 The patterned micro-nano-line optical component of claim 1, wherein the flexible film substrate is a thermal curing material or a uv-curing material. 如請求項1之圖形化微奈米線光學元件,其中,該軟膜基材係獨立選自下列族群之一者或其任意組合:聚二甲基矽氧烷、聚碳酸酯、聚氯乙烯、聚對苯二甲酸乙二酯、聚苯乙烯。 The patterned micro-nano-line optical component of claim 1, wherein the soft film substrate is independently selected from one of the following groups or any combination thereof: polydimethyl siloxane, polycarbonate, polyvinyl chloride, Polyethylene terephthalate, polystyrene. 如請求項1之圖形化微奈米線光學元件,更包含:至少一微結構,形成於該軟膜基材之表面,用以降低該軟膜基材與該微奈米細線之吸附力(adhesion force)。 The patterned micro-nano-line optical component of claim 1, further comprising: at least one microstructure formed on a surface of the flexible film substrate for reducing the adsorption force of the soft film substrate and the micro-nanofine line (adhesion force) ). 如請求項5之圖形化微奈米線光學元件,其中,該微結構為顆粒結構、柱狀結構或其他突起結構。 A patterned micro-nano-line optical element according to claim 5, wherein the microstructure is a granular structure, a columnar structure or other protruding structure. 如請求項1之圖形化微奈米線光學元件,其中,該微奈米細線 包含下列族群之一者:矽、二氧化矽與高分子聚合物。 The patterned micro-nano-line optical component of claim 1, wherein the micro-nano thin line Contains one of the following groups: bismuth, cerium oxide and high molecular polymers. 如請求項1之圖形化微奈米線光學元件,其中,該微奈米細線之直徑範圍係10奈米至100微米。 The patterned micro-nano-line optical component of claim 1, wherein the micro-nanowire has a diameter ranging from 10 nm to 100 μm. 如請求項1之圖形化微奈米線光學元件,其中,該微奈米細線包含至少一掺雜物,該掺雜物係獨立選自下列族群之一者或其任意組合:金屬元素、可發光之分子與發光之原子。 The patterned micro-nano-line optical component of claim 1, wherein the micro-nanofine line comprises at least one dopant, the dopant being independently selected from one of the following groups or any combination thereof: a metal element, The molecule of luminescence and the atom of luminescence. 如請求項9之圖形化微奈米線光學元件,其中,該掺雜物具有使得雷射能量增益之性質。 The patterned micro-nano-line optical component of claim 9, wherein the dopant has a property of making a laser energy gain. 如請求項1之圖形化微奈米線光學元件,更包含:一封裝結構,用以封裝包覆該微奈米細線於該內陷溝槽中。 The patterned micro-nano-line optical component of claim 1, further comprising: a package structure for encapsulating the micro-nano wire in the recessed trench. 如請求項11之圖形化微奈米線光學元件,其中,該封裝結構係由熱固化(thermal curing)材料或光固化(uv-curing)材料所形成。 The patterned micro-nano-line optical component of claim 11, wherein the encapsulation structure is formed of a thermal curing material or a uv-curing material. 一種圖形化微奈米線光學元件之製造方法,包含下列步驟:一微影程序,用以形成至少一具親水性或疏水性之微奈米圖形於一軟膜基材之表面,該微奈米圖形包含複數構形,該構形包含下列族群之一者或其任意組合:平面結構、內陷結構與凸起結構;及提供至少一種微奈米細線,將該微奈米細線對應結合該些構形設置並形成複數光波導元件,該些光波導元件包含至少一光學耦合區域(optical coupling region),該光學耦合區域位於該些光波導元件之接合處。 A method for fabricating a patterned micro-nano-line optical component, comprising the steps of: a lithography process for forming at least one hydrophilic or hydrophobic micro-nano pattern on a surface of a flexible film substrate, the micro-nano The graphic comprises a plurality of configurations comprising one of the following groups or any combination thereof: a planar structure, an indented structure and a raised structure; and providing at least one micro-nanofine line, the micro-nano-fine line correspondingly combining the structures Forming and forming a plurality of optical waveguide elements, the optical waveguide elements comprising at least one optical coupling region located at a junction of the optical waveguide elements. 如請求項13之製造方法,其中,該微影程序係選自下列族群之一者:光學微影術(photolithography)、電子束微影術(electron beam lithography)、雷射直寫微影術(laser direct write lithography)、光學干涉微影術(optical interference lithography)與奈米壓印微影術(nano imprint lithography)。 The manufacturing method of claim 13, wherein the lithography process is selected from one of the following groups: photolithography, electron beam lithography, and laser direct writing lithography ( Laser direct write lithography), optical interference lithography and nano imprint lithography. 如請求項13之製造方法,其中,該微影程序包含下列步驟:一曝光顯影程序,用以形成一母膜,其表面包含至少一轉印圖形;提供一軟膜聚合物,為液體狀之該軟膜基材;一塗覆程序,用以塗覆該軟膜聚合物於該母膜之表面;一固化程序,用以固化該軟膜聚合物並形成包含對應於該轉印圖形之該微奈米圖形之該軟膜基材;及一翻模程序,由該母膜之表面分離出該軟膜基材。 The manufacturing method of claim 13, wherein the lithography process comprises the following steps: an exposure developing process for forming a mother film having a surface comprising at least one transfer pattern; providing a soft film polymer which is liquid a soft film substrate; a coating process for coating the soft film polymer on the surface of the mother film; a curing process for curing the soft film polymer and forming the micro-nano pattern corresponding to the transfer pattern The soft film substrate; and a mold changing process, separating the soft film substrate from the surface of the mother film. 如請求項15之製造方法,其中,該母膜包含下列族群之一者或其任意組合:矽基材(silicon-based substrate)、玻璃基材、聚二甲基矽氧烷與高分子聚合物。 The method of claim 15, wherein the master film comprises one of the following groups or any combination thereof: a silicon-based substrate, a glass substrate, a polydimethylsiloxane, and a high molecular polymer. . 如請求項13之製造方法,其中,該構形為平面結構,該微奈米細線設置於該些構形之上方。 The manufacturing method of claim 13, wherein the configuration is a planar structure, and the micro-nano wires are disposed above the configurations. 如請求項13之製造方法,其中,該構形為內陷結構,該微奈米細線設置於該些構形之內部。 The manufacturing method of claim 13, wherein the configuration is an indentation structure, and the micro-nano wires are disposed inside the configurations. 如請求項13之製造方法,其中,該構形為凸起結構,該微奈米細線設置於該些構形之側面。 The manufacturing method of claim 13, wherein the configuration is a convex structure, and the micro-nano wires are disposed on sides of the configurations. 如請求項13之製造方法,其中,該軟膜基材係為熱固化(thermal curing)材料或光固化(uv-curing)材料。 The manufacturing method of claim 13, wherein the soft film substrate is a thermal curing material or a uv-curing material. 如請求項13之製造方法,其中,該軟膜基材係獨立選自下列族群之一者或其任意組合:聚二甲基矽氧烷、聚碳酸酯、聚氯乙烯、聚對苯二甲酸乙二酯、聚苯乙烯。 The method of claim 13, wherein the soft film substrate is independently selected from one of the following groups or any combination thereof: polydimethyl siloxane, polycarbonate, polyvinyl chloride, polyethylene terephthalate Diester, polystyrene. 如請求項13之製造方法,其中,該微奈米細線包含下列族群之一者或其任意組合:矽、二氧化矽與高分子聚合物。 The method of claim 13, wherein the micronite filament comprises one of the following groups or any combination thereof: ruthenium, ruthenium dioxide, and a high molecular polymer. 如請求項13之製造方法,其中,該微奈米細線之直徑範圍係10奈米至100微米。 The manufacturing method of claim 13, wherein the micro-nano wire has a diameter ranging from 10 nm to 100 μm. 如請求項13之製造方法,其中,該微奈米細線包含至少一掺雜物,該掺雜物係獨立選自下列族群之一者或其任意組合:金屬元素、發光之分子與發光之原子。 The method of claim 13, wherein the micro-nanofine line comprises at least one dopant independently selected from one of the following groups or any combination thereof: a metal element, a luminescent molecule, and a luminescent atom . 如請求項24之製造方法,其中,該掺雜物具有使得雷射能量增益之性質。 The method of manufacturing of claim 24, wherein the dopant has a property of making a laser energy gain. 如請求項13之製造方法,更包含:一封裝程序,利用一封裝材料將該微奈米細線與該些構形封裝結合。 The manufacturing method of claim 13, further comprising: a packaging process, using the encapsulating material to bond the micro-nano wires with the configuration packages. 如請求26之製造方法,其中,封裝材料係為熱固化(thermal curing)材料或光固化(uv-curing)材料。 The method of manufacturing of claim 26, wherein the encapsulating material is a thermal curing material or a uv-curing material. 如請求項13之製造方法,更包含:提供一界面劑,用以降低該軟膜基材與該微奈米細線之吸附力(adhesion force)。 The manufacturing method of claim 13, further comprising: providing an interface agent for reducing the adhesion force of the soft film substrate and the micro-nanofine wire. 如請求項28之製造方法,其中,該界面劑為具揮發性之液體。 The method of claim 28, wherein the interface agent is a volatile liquid. 如請求項28之製造方法,其中,該界面劑包含:乙醇或其水溶液。 The method of claim 28, wherein the interface agent comprises: ethanol or an aqueous solution thereof. 如請求項28之製造方法,更包含:提供一操控工具,該操控工具包含:一鎢針,用以接觸移動該微奈米細線;及一種四軸微動平台,連接該鎢針,該四軸微動平台用以移動該鎢針,以使得該鎢針將該微奈米細線移動對應設置於該些構形,其中,該四軸微動平台具有X、Y、Z、θx四自由度。 The manufacturing method of claim 28, further comprising: providing a manipulation tool, the manipulation tool comprising: a tungsten needle for contacting and moving the micro-nano wire; and a four-axis micro-motion platform connecting the tungsten needle, the four-axis The micro-motion platform is configured to move the tungsten needle such that the tungsten needle moves the micro-nano thin wire correspondingly to the configurations, wherein the four-axis micro-motion platform has four degrees of freedom of X, Y, Z, and θx.
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